Monocrystalline silicon wafer ultrasonic cleaning machine with multi-stage spray cleaning and vacuum infrared drying cleaning machine structure

Abstract

The invention relates to the technical field of cleaning machines, in particular to a monocrystalline silicon wafer ultrasonic cleaning machine with a multi-stage spray cleaning and vacuum infrared drying cleaning machine structure, which comprises a cleaning seat and a material supporting device mounted at the top end of the cleaning seat, an ultrasonic cleaning cavity, an ozone water spraying cavity, a hydrofluoric acid spraying cavity, an alkaline spraying cavity, an acid spraying cavity and a vacuum infrared drying cavity are sequentially formed in the top face of the cleaning base along the circumference, a center column is fixedly welded to the center of the top end of the cleaning base, and an intermittent rotating device is installed at the top end of the cleaning base around the center column. And the intermittent rotating device drives the materials in the material supporting device to move among the working cavities in sequence. According to the silicon wafer cleaning device, the ozone water spraying cavity, the diluted hydrofluoric acid spraying cavity, the alkaline spraying cavity and the acid spraying cavity are arranged to achieve multi-stage spraying cleaning of silicon wafers, the vacuum infrared drying cavity is arranged to rapidly dry the silicon wafers, and meanwhile a twisting block rotates to drive the bottom tray and the top cover tray where monocrystalline silicon wafers are placed to twist in the cleaning process; and the silicon wafer is cleaned more thoroughly.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of cleaning machines, in particular to a single crystal silicon wafer ultrasonic cleaning machine with multi-stage spraying cleaning and vacuum infrared drying cleaning machine structure. BACKGROUND

[0002] Single crystal silicon wafers are circular thin slices made of high-purity silicon raw materials, with atoms arranged in a highly ordered diamond lattice structure. The entire crystal has only one crystal direction and no grain boundaries or defects. With characteristics such as regular atomic arrangement and controllable electrical conductivity, it is widely used in chip manufacturing and solar cells.

[0003] The patent with application number CN202310962869.3 discloses a semiconductor silicon wafer cleaning method and cleaning equipment, including the following steps: S1: positioning control, placing the semiconductor silicon wafer into the cleaning machine and fixing it in position, keeping it vertical; S2: water washing, using the spraying structure on the cleaning machine to spray cleaning liquid on the semiconductor silicon wafer for preliminary cleaning; S3: ultrasonic cleaning, turning on the ultrasonic oscillator to generate ultrasonic waves, which clean the surface of the semiconductor silicon wafer. By moving forward and rotating itself, the flexible cleaning block on the hard plastic plate cleans the sidewall of the semiconductor silicon wafer in contact with it, removing the softened pollution on the top surface of the semiconductor silicon wafer, thereby increasing the cleaning effect and efficiency of the semiconductor silicon wafer.

[0004] Current mainstream solutions use separate ultrasonic cleaning for silicon wafer cleaning, and the silicon wafer remains stationary during the cleaning process. Due to the stationary silicon wafer, the distribution of ultrasonic cleaning energy on the silicon wafer surface may not be uniform, leading to incomplete cleaning in some areas. Separate ultrasonic cleaning has limited effectiveness in removing stubborn stains and impurities, making it difficult to meet the needs of high-precision cleaning. At the same time, after cleaning is completed, traditional methods may not be able to quickly and effectively remove moisture from the silicon wafer surface, easily leaving water stains or residues on the silicon wafer surface, affecting the quality and subsequent use of the silicon wafer.

[0005] In view of this, we propose a single crystal silicon wafer ultrasonic cleaning machine with multi-stage spraying cleaning and vacuum infrared drying cleaning machine structure. SUMMARY

[0006] In order to overcome the defects in the prior art, the purpose of the present application is to provide a single crystal silicon wafer ultrasonic cleaning machine with multi-stage spray cleaning and vacuum infrared drying cleaning machine structure, by setting ozone water spray cavity, dilute hydrofluoric acid spray cavity, alkaline spray cavity and acid spray cavity to realize multi-stage spray cleaning of the silicon wafer, and by setting a vacuum infrared drying cavity to dry the silicon wafer quickly, and by rotating the bottom tray and the top cover disc on which the single crystal silicon wafer is placed to rotate during cleaning, so that the silicon wafer is cleaned more thoroughly, thereby solving the problems in the above background art.

[0007] In order to achieve the above purpose, the present application provides a single crystal silicon wafer ultrasonic cleaning machine with multi-stage spray cleaning and vacuum infrared drying cleaning machine structure, which comprises a cleaning seat and a material supporting device mounted on the top end of the cleaning seat, the top surface of the cleaning seat is sequentially provided with an ultrasonic cleaning cavity, an ozone water spray cavity, a hydrofluoric acid spray cavity, an alkaline spray cavity, an acid spray cavity and a vacuum infrared drying cavity along the circumference, a center column is welded and fixed at the center of the top end of the cleaning seat, an intermittent rotating device is mounted around the center column at the top end of the cleaning seat, and the intermittent rotating device drives the materials in the material supporting device to move sequentially between each working cavity. The material supporting device comprises a regular hexagonal sliding seat slidingly connected to the center column, a mounting bracket welded and fixed at the center of each side surface of the regular hexagonal sliding seat, and a material supporting assembly rotatably connected to the end of the mounting bracket, the material supporting assembly comprises a twisting block rotatably connected to the upper and lower sides of the end of the mounting bracket, and a bottom tray and a top cover disc rotatably connected between the two twisting blocks and capable of being clamped with each other, and a plurality of single crystal silicon wafers can be fixed between the bottom tray and the top cover disc. The intermittent rotating device comprises a hexagonal rotating block rotatably connected in the cleaning seat, a ring block rotatably connected to the center column, a plurality of sliding rods connecting between the hexagonal rotating block and the ring block, and a rotating disc rotatably connected in the cleaning seat, and a threaded rod threadedly connected with the regular hexagonal sliding seat is rotatably connected between the hexagonal rotating block and the ring block.

[0008] This setting takes into account the existence of different types and degrees of pollutants on the surface of single crystal silicon wafer, and a single cleaning method is difficult to achieve ideal effect. In the multi-stage spray cleaning structure, different cleaning cavities are used, and a plurality of groups of chemical cleaning liquid are used to gradually spray clean the single crystal silicon wafer, remove different types of impurities on the surface of the single crystal silicon wafer, and the setting of the vacuum infrared drying cavity solves the problem of poor drying effect of the traditional cleaning method.

[0009] The design of the material supporting device enables the single crystal silicon wafer to move between the working cavities during the cleaning process. The rotation of the twisting block drives the rotation of the bottom tray and the top cover plate, and then the single crystal silicon wafer placed therein is rotated during the cleaning process. The surface of the silicon wafer can uniformly receive the cleaning liquid of each spraying cavity and the ultrasonic wave of the ultrasonic cleaning cavity, avoiding the problem of uneven energy distribution and incomplete cleaning of some areas caused by the static silicon wafer, so that the cleaning of the silicon wafer is more thorough, and the demand for high-precision cleaning is met.

[0010] The design of the intermittent rotating device realizes the orderly movement of the materials in the material supporting device between the working cavities. When the dial plate rotates, the materials in the material supporting device move between the ultrasonic cleaning cavity, the ozone water spraying cavity, the hydrofluoric acid spraying cavity, the alkaline spraying cavity, the acidic spraying cavity and the vacuum infrared drying cavity in turn, completing the entire cleaning and drying process.

[0011] As a further improvement of the technical solution, a plurality of multi-frequency ultrasonic generators are regularly installed in the ultrasonic cleaning cavity, which can emit ultrasonic waves of 40 kHz, 80 kHz and 170 kHz. A vacuum pump and a plurality of infrared lamps are installed in the vacuum infrared drying cavity.

[0012] The ultrasonic cleaning cavity uses multi-frequency ultrasonic generators to emit ultrasonic waves of different frequencies to preliminarily clean the single crystal silicon wafer. This can effectively remove larger particle impurities and some loose contaminants attached to the surface of the silicon wafer. Different frequencies of ultrasonic waves can cooperate with each other to cover a wider cleaning range and reduce cleaning dead angles.

[0013] After the cleaning is completed, the material supporting device transfers the single crystal silicon wafer to the vacuum infrared drying cavity. The vacuum pump quickly removes the air in the cavity to form a vacuum environment, which reduces the boiling point of water and enables the moisture on the surface of the silicon wafer to evaporate quickly at a lower temperature. At the same time, the infrared lamps emit infrared rays to quickly heat the surface of the silicon wafer and accelerate the evaporation of moisture, achieving rapid drying of the silicon wafer and effectively avoiding the generation of water stains and residues.

[0014] As a further improvement of the technical solution, a plurality of spray heads are regularly installed in the ozone water spraying cavity, the dilute hydrofluoric acid spraying cavity, the alkaline spraying cavity and the acidic spraying cavity. The spray heads in the ozone water spraying cavity are connected to the chemical cleaning liquid containing ozone water, the spray heads in the hydrofluoric acid spraying cavity are connected to the chemical cleaning liquid containing dilute hydrofluoric acid, the spray heads in the alkaline spraying cavity are connected to the chemical cleaning liquid containing ammonia water and hydrogen peroxide, and the spray heads in the acidic spraying cavity are connected to the chemical cleaning liquid containing hydrochloric acid and hydrogen peroxide and the pure water cleaning liquid.

[0015] The ozone water spraying cavity sprays the silicon wafer with the chemical cleaning solution containing ozone water. Ozone has strong oxidizing property and can oxidize and decompose the organic contaminants on the surface of the silicon wafer, further purifying the surface of the silicon wafer. The chemical cleaning solution containing diluted hydrofluoric acid in the hydrofluoric acid spraying cavity removes the natural oxide film on the surface of the silicon wafer, so that the metal attached to the natural oxide film is dissolved into the cleaning solution, and the formation of the oxide film is inhibited. Therefore, the metals such as Al, Fe, Zn and Ni on the surface of the silicon wafer can be easily removed. The chemical cleaning solution containing ammonia water and hydrogen peroxide in the alkaline spraying cavity oxidizes and complexes the organic matter and particles, and forms a thin oxide layer to protect the surface of the silicon wafer. The chemical cleaning solution containing hydrochloric acid and hydrogen peroxide and the pure water cleaning solution are simultaneously connected to the acid spraying cavity. The chemical cleaning solution containing hydrochloric acid and hydrogen peroxide can remove the metal contaminants such as sodium, iron and magnesium on the surface of the silicon wafer, and the pure water cleaning solution is used to flush away the residual chemical cleaning solution on the surface of the silicon wafer, preventing the damage of the silicon wafer caused by the residual chemical substances.

[0016] As a further improvement of the technical solution, the mounting frame is provided with sealing covers matched with the working cavities on the cleaning seat, and a plurality of vibrating teeth are welded and fixed to the bottom end of the side surface of the vertical plate of the mounting frame. A rack is mounted on one side wall of each working cavity of the cleaning seat, and the vibrating teeth and the rack in the corresponding direction are engaged when they are staggered downward.

[0017] The sealing covers on the mounting frame are matched with the working cavities, and when the material supporting device enters the corresponding working cavity, the sealing cover can tightly cover the working cavity, effectively preventing the leakage of the chemical cleaning solution or dry gas in each working cavity and avoiding the mutual interference of the substances in different working cavities. Meanwhile, the plurality of vibrating teeth welded and fixed to the bottom end of the side surface of the vertical plate of the mounting frame are matched with the rack mounted on one side wall of each working cavity of the cleaning seat. When the mounting frame is lowered, the vibrating teeth and the rack are engaged in a staggered manner, which can produce a vibrating effect. The vibration can cause the single crystal silicon wafer placed between the bottom tray and the top cover disc to vibrate slightly during the cleaning process, further promoting the full contact between the cleaning solution and the surface of the silicon wafer, enhancing the cleaning effect, helping to remove some stubborn stains and impurities on the surface of the silicon wafer, and making the cleaning more thorough.

[0018] As a further improvement of the technical solution, a first motor is mounted at the top end of the end portion of the mounting frame, and the output shaft of the first motor is coaxially connected with the rod portion of the twisting block located above.

[0019] The first motor is provided as a power source, and the output shaft thereof is coaxially connected with the rod portion of the twisting block located above, so as to accurately control the rotation of the twisting block. During the cleaning process, the first motor is started to drive the twisting block to rotate, and then drive the bottom tray and the top cover disc to rotate synchronously.

[0020] As a further improvement of the technical solution, a plurality of placing grooves are arranged in the bottom tray, and a ring bracket is welded and fixed to the bottom end of the lever part of the twisting block located below, and a plurality of disturbance plates are installed on the top end of the ring bracket.

[0021] The plurality of placing grooves arranged in the bottom tray can accurately fix the position of the single crystal silicon wafer, prevent displacement or collision of the silicon wafer during cleaning and rotation, and ensure the stability and safety of the cleaning process. The ring bracket welded and fixed to the bottom end of the lever part of the twisting block located below provides a stable installation basis for the plurality of disturbance plates. The arrangement of the plurality of disturbance plates can disturb the cleaning liquid to generate a more complex flow state when the bottom tray and the top cover plate rotate in the ultrasonic cleaning cavity, so that the ultrasonic energy is more uniformly distributed in the cleaning liquid, and the impact and stripping effect on the surface stains of the single crystal silicon wafer is further enhanced.

[0022] As a further improvement of the technical solution, a plurality of placing grooves are arranged in the bottom tray, and a ring bracket is welded and fixed to the bottom end of the lever part of the twisting block located below, and a plurality of disturbance plates are installed on the top end of the ring bracket. The size of the disturbance block welded and fixed to the top surface side of the dial plate is matched with the size of the long groove arranged at the hexagonal part of the hexagonal rotating block, and the dial plate rotates one turn, and the hexagonal rotating block rotates one sixth of a turn.

[0023] The size of the disturbance block welded and fixed to the top surface side of the dial plate is matched with the size of the long groove arranged at the hexagonal part of the hexagonal rotating block, and the size of the long groove arranged at the hexagonal part of the hexagonal rotating block is matched with the size of the disturbance block welded and fixed to the top surface side of the dial plate, and the precise transmission ratio is realized. When the dial plate rotates one turn, the disturbance block will interact with the six long grooves in turn, so that the hexagonal rotating block only rotates one sixth of a turn. This intermittent rotation mode, combined with the threaded connection of the threaded rod and the regular hexagonal slide, can accurately control the moving distance and residence time of the material supporting device between the working cavities.

[0024] As a further improvement of the technical solution, a second motor is installed in the cleaning seat, and the output shaft of the second motor is coaxially connected with the dial plate.

[0025] The second motor is arranged as the power source for the rotation of the dial plate, and the output shaft of the second motor is coaxially connected with the dial plate, so that the rotation speed and direction of the dial plate can be stably and accurately controlled. By adjusting the rotation speed of the second motor, the moving rhythm of the material supporting device between the working cavities can be flexibly adjusted to meet the needs of different cleaning and drying processes.

[0026] As a further improvement of the technical solution, a third motor is installed on the top end of the ring block, and the output shaft of the third motor is coaxially connected with the threaded rod.

[0027] The third motor is arranged to provide direct power for the rotation of the threaded rod. Since the threaded rod is threadedly connected with the regular hexagonal slide, the rotation of the threaded rod will be converted into the up-down movement of the regular hexagonal slide along the center column, thereby driving the entire material supporting device to move up and down.

[0028] As a further improvement of the technical solution, a plurality of sliding holes matching the size of the slide rod are formed in the regular hexagonal slide, and a threaded hole matching the threaded rod is formed in the regular hexagonal slide.

[0029] The regular hexagonal slide is matched with the slide rod through the sliding holes, and is matched and connected with the threaded rod through the threaded hole, so that the regular hexagonal slide can stably slide up and down along the slide rod when the threaded rod rotates.

[0030] Compared with the prior art, the present application has the following beneficial effects: 1. The single crystal silicon wafer ultrasonic cleaning machine with multi-stage spraying cleaning and vacuum infrared drying cleaning machine structure can effectively remove organic contaminants, natural oxide film, metal contamination and particle impurities, etc., greatly improving the cleaning effect, by setting a multi-stage spraying cleaning structure, using ozone water spraying cavity, dilute hydrofluoric acid spraying cavity, alkaline spraying cavity and acid spraying cavity, and cooperating with different chemical cleaning liquids to gradually and specifically clean different types and degrees of pollutants on the surface of the single crystal silicon wafer.

[0031] 2. The single crystal silicon wafer ultrasonic cleaning machine with multi-stage spraying cleaning and vacuum infrared drying cleaning machine structure solves the problem of poor drying effect of the traditional cleaning method, by using a vacuum infrared drying cavity. After cleaning is completed, the vacuum pump quickly removes the air in the cavity to form a vacuum environment, reduces the boiling point of water, and the infrared lamp emits infrared rays to quickly heat the surface of the silicon wafer, accelerating the evaporation of water, realizing the rapid drying of the silicon wafer, and effectively avoiding the generation of water stains and residues.

[0032] 3. The single crystal silicon wafer ultrasonic cleaning machine with multi-stage spraying cleaning and vacuum infrared drying cleaning machine structure can rotate the single crystal silicon wafer during cleaning by rotating the bottom tray and top cover disc through the rotation of the twisting block in the material supporting device, so that the surface of the silicon wafer uniformly receives the cleaning liquid of each spraying cavity and the ultrasonic wave of the ultrasonic cleaning cavity, avoiding the problem of uneven energy distribution and incomplete cleaning in some areas caused by the static silicon wafer, and making the cleaning more comprehensive and thorough. BRIEF DESCRIPTION OF DRAWINGS

[0033] The drawings described herein are for illustrative purposes only and are not intended to limit the scope of the present disclosure in any way. In addition, the shapes and proportions of the components in the drawings are only illustrative and are used to help understand the present application, and are not specific limitations on the shapes and proportions of the components of the present application. Those skilled in the art can select various possible shapes and proportions to implement the present application according to specific circumstances under the guidance of the present application.

[0034] Figure 1 The figure is a schematic diagram of the overall structure of the present application; Figure 2 The figure is a sectional view of the overall structure of the present application; Figure 3 is the whole structure of the present application; Figure 2 is an enlarged view of the structure of A in the present application; Figure 4 is an exploded view of the whole structure of the present application; Figure 5 is an exploded view of the structure of the material supporting device in the present application; Figure 6 is an exploded view of the structure of the material supporting assembly in the present application; Figure 7 is an exploded view of the structure of the intermittent rotating device in the present application; The meanings of the respective reference numerals in the drawings are as follows: 100, cleaning seat; 110, ultrasonic cleaning cavity; 111, multi-frequency ultrasonic generator; 120, ozone water spraying cavity; 130, hydrofluoric acid spraying cavity; 140, alkaline spraying cavity; 150, acid spraying cavity; 160, vacuum infrared drying cavity; 161, infrared lamp; 170, center column; 180, rack; 190, spraying head; 200, material supporting device; 210, regular hexagonal sliding seat; 211, sliding hole; 212, threaded hole; 220, mounting frame; 221, vibrating tooth; 230, sealing cover; 240, material supporting assembly; 241, bottom tray; 2411, placing groove; 242, top cover plate; 243, single crystal silicon wafer; 244, twisting block; 245, ring holder; 246, disturbing plate; 247, first motor; 300, intermittent rotating device; 310, hexagonal rotating block; 311, long slot; 320, sliding rod; 330, ring block; 340, threaded rod; 350, dial plate; 351, dial block; 360, second motor; 370, third motor. DETAILED DESCRIPTION

[0035] The details of the present application can be more clearly understood by the following description in conjunction with the accompanying drawings and the specific embodiments of the present application. However, the specific embodiments of the present application described herein are only for the purpose of explaining the present application, and should not be understood as limiting the present application in any way. Based on the teachings of the present application, a skilled person can conceive any possible modification of the present application, which should be considered as falling within the scope of the present application. The terms “mounting” and “connecting” should be interpreted broadly, which can be direct connection or indirect connection through an intermediate medium.

[0036] The terms "central axis", "vertical", "horizontal", "front", "back", "upper", "lower", "left", "right", "top", "bottom", "inner", "outer" and the like as used herein to indicate an orientation or positional relationship based on the orientation or position shown in the drawings, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application. In addition, in the description of the present application, the meaning of "several" is two or more, unless otherwise explicitly and specifically limited.

[0037] Referring to Figure 1 , Figure 2 and Figure 4 , the present application provides a single crystal silicon wafer ultrasonic cleaning machine with multi-stage spray cleaning and vacuum infrared drying cleaning machine structure, which comprises a cleaning seat 100 and a material supporting device 200 installed on the top end of the cleaning seat 100. The top surface of the cleaning seat 100 is sequentially provided with an ultrasonic cleaning cavity 110, an ozone water spraying cavity 120, a hydrofluoric acid spraying cavity 130, an alkaline spraying cavity 140, an acidic spraying cavity 150 and a vacuum infrared drying cavity 160 along the circumference. A central column 170 is welded and fixed at the center of the top end of the cleaning seat 100. An intermittent rotating device 300 is installed around the central column 170 at the top end of the cleaning seat 100. The intermittent rotating device 300 drives the materials in the material supporting device 200 to move sequentially between each working cavity During the cleaning process, considering the existence of different types and degrees of pollutants on the surface of the silicon wafer, the ozone water spraying cavity 120, the hydrofluoric acid spraying cavity 130, the alkaline spraying cavity 140 and the acidic spraying cavity 150 are designed to cooperatively clean the silicon wafer through different chemical cleaning liquids in each spraying cavity, and the vacuum infrared drying cavity 160 is provided to quickly and efficiently dry the silicon wafer after cleaning. At the same time, the intermittent rotating device 300 is designed to drive the material supporting device 200 to move accurately between each working cavity.

[0038] Specifically, a plurality of multi-frequency ultrasonic generators 111 are regularly installed in the ultrasonic cleaning cavity 110. The multi-frequency ultrasonic generators 111 can emit 40kHz, 80kHz and 170kHz ultrasonic waves. The 40kHz ultrasonic waves remove 2-50μm large particles, the 80kHz ultrasonic waves remove 1-5μm organic film, and the 170kHz ultrasonic waves remove 0.2-1.5μm nanoscale metal particles. A vacuum pump and a plurality of infrared lamps 161 are installed in the vacuum infrared drying cavity 160. The vacuum pump can quickly remove the air in the cavity after cleaning to form a vacuum environment, reducing the boiling point of water. The infrared lamps 161 emit infrared rays to quickly heat the surface of the silicon wafer, accelerate the evaporation of water, and achieve rapid drying of the silicon wafer, effectively avoiding the generation of water stains and residues.

[0039] Further, the ozone water spraying cavity 120, the dilute hydrofluoric acid spraying cavity 130, the alkaline spraying cavity 140 and the acid spraying cavity 150 are regularly provided with a plurality of spraying heads 190, the spraying heads 190 in the ozone water spraying cavity 120 are connected with the chemical cleaning solution containing ozone water, the chemical cleaning solution containing ozone water is uniformly sprayed on the surface of the silicon wafer through the spraying heads 190, and the strong oxidizing property of ozone is used to rapidly oxidize and decompose the organic pollutants on the surface of the silicon wafer, such as oil and grease, photoresist residues and the like, so as to prepare for the subsequent deep cleaning; The spraying heads 190 in the dilute hydrofluoric acid spraying cavity 130 are connected with the chemical cleaning solution containing dilute hydrofluoric acid, and the cleaning solution can accurately remove the natural oxide film on the surface of the silicon wafer. Since metal impurities are often attached to the natural oxide film, with the dissolution of the oxide film, the metal impurities are also dissolved into the cleaning solution. Meanwhile, the dilute hydrofluoric acid can effectively inhibit the reformation of the oxide film, so as to ensure the cleanliness of the surface of the silicon wafer. The spraying heads 190 in the alkaline spraying cavity 140 are connected with the chemical cleaning solution containing ammonia water and hydrogen peroxide. The chemical cleaning solution containing ammonia water and hydrogen peroxide has strong alkalinity, can chemically react with metal ions on the surface of the silicon wafer to generate a complex that is soluble in water, so as to effectively remove metal contamination on the surface of the silicon wafer, such as sodium, iron and magnesium, and also remove part of the particle impurities, further purifying the surface of the silicon wafer. The spraying heads 190 in the acid spraying cavity 150 are simultaneously connected with the chemical cleaning solution containing hydrochloric acid and hydrogen peroxide and the pure water cleaning solution. The chemical cleaning solution containing hydrochloric acid and hydrogen peroxide can remove the residual metal impurities and some stubborn particle impurities on the surface of the silicon wafer. The synergistic effect of hydrochloric acid and hydrogen peroxide can enhance the cleaning effect, so as to ensure that the surface of the silicon wafer reaches an extremely high degree of cleanliness. Through the sequential action of different chemical cleaning solutions, the different types and degrees of pollutants on the surface of the silicon wafer are gradually and targetedly cleaned, so that the cleaning effect is greatly improved.

[0040] Specifically, please refer to Figure 5 and Figure 6 As shown in FIGS. 1, 2 and 3, the tray supporting device 200 comprises a regular hexagonal sliding seat 210 slidingly connected to the center column 170, mounting frames 220 fixedly welded at the center of each side of the regular hexagonal sliding seat 210, and a tray supporting assembly 240 rotatably connected to the end of the mounting frame 220; the tray supporting assembly 240 comprises torsion blocks 244 rotatably connected to the upper and lower sides of the end of the mounting frame 220, and a bottom tray 241 and a top cover disc 242 rotatably connected between the two torsion blocks 244 and capable of being clamped with each other, and a plurality of single crystal silicon wafers 243 can be fixed between the bottom tray 241 and the top cover disc 242. The single crystal silicon wafer 243 is placed on the bottom tray 241 and fixed by the top cover plate 242, and the rotating block 244 is rotated to drive the bottom tray 241 and the top cover plate 242 to rotate synchronously, so that the single crystal silicon wafer 243 can uniformly receive the cleaning liquid of each spraying cavity and the ultrasonic wave of the ultrasonic cleaning cavity 110 during the cleaning process, thereby avoiding the problems of uneven energy distribution and incomplete cleaning in some areas due to the static silicon wafer, and ensuring the comprehensiveness and thoroughness of the cleaning.

[0041] In addition, referring to Figure 5 As shown, the mounting frame 220 is provided with sealing covers 230 matched with the working cavities of the cleaning seat 100, and the sealing covers 230 can tightly fit the openings of the working cavities to effectively prevent the cleaning liquid from spilling out of the working cavities during the spraying process, avoid corrosion and damage to other components inside the cleaning seat 100, and ensure the relative independence and stability of the cleaning environment to prevent the chemical cleaning liquids in different working cavities from mixing and affecting the cleaning effect. Referring to Figure 2 and Figure 3 As shown, the vertical plate of the mounting frame 220 is welded and fixed with a plurality of vibrating teeth 221 at the bottom end of the side surface, and the sidewall of each working cavity of the cleaning seat 100 is provided with a rack 180, and the vibrating teeth 221 and the rack 180 in the corresponding position are engaged when they are lowered and staggered. When the mounting frame 220 is lowered and moved by the regular hexagonal sliding seat 210, the vibrating teeth 221 are engaged with the rack 180 on the sidewall of the corresponding working cavity. During the engagement process, since the rack 180 is fixed, the vibrating teeth 221 will slide on the rack 180 with the movement of the mounting frame 220. This relative sliding causes the mounting frame 220 to vibrate at a certain frequency and amplitude. The vibration causes the single crystal silicon wafer 243 between the bottom tray 241 and the top cover plate 242 to also vibrate slightly. The slight vibration of the single crystal silicon wafer 243 can further enhance the scouring effect of the cleaning liquid on its surface.

[0042] Further, referring to Figure 5 and Figure 6 As shown, the first motor 247 is installed at the top end of the end portion of the mounting frame 220, the output shaft of the first motor 247 is coaxially connected with the rod portion of the upper rotating block 244, and the output shaft of the first motor 247 drives the upper rotating block 244 to rotate after the first motor 247 is started, thereby driving the bottom tray 241 and the top cover plate 242 to rotate, ensuring that the single crystal silicon wafer 243 can continuously and stably rotate during the cleaning process, so that the cleaning liquid can uniformly cover the surface of the silicon wafer, and the occurrence of cleaning dead angles is avoided.

[0043] Specifically, referring to Figure 6As shown, the bottom tray 241 is provided with a plurality of placing grooves 2411, which are designed to accurately position the single crystal silicon wafer 243 when placed, and each placing groove 2411 corresponds to placing a single crystal silicon wafer 243, effectively preventing the mutual collision and displacement of the wafers during the cleaning process, and ensuring the stability and reliability of the cleaning process; the bottom end of the lever of the twisting block 244 is welded and fixed with a ring bracket 245, and the top end of the ring bracket 245 is provided with a plurality of disturbance plates 246, which are evenly distributed on the top end of the ring bracket 245. During the rotation of the ring bracket 245, the disturbance plates 246 will rotate together, and the disturbance generated by the rotation can further promote the flow of the cleaning liquid on the surface of the single crystal silicon wafer 243, enhancing the cleaning effect.

[0044] It is worth mentioning that, please refer to Figure 2 and Figure 7 As shown, the intermittent rotation device 300 includes a hexagonal rotating block 310 rotatably connected in the cleaning seat 100, a ring block 330 rotatably connected to the center column 170, a plurality of sliding rods 320 connecting the hexagonal rotating block 310 and the ring block 330, and a dial plate 350 rotatably connected in the cleaning seat 100, the hexagonal rotating block 310 and the ring block 330 are rotatably connected with a threaded rod 340 threadedly connected with the regular hexagonal sliding seat 210, The dial plate 350 rotates to drive the hexagonal rotating block 310 to rotate one sixth of a circle, and when the hexagonal rotating block 310 rotates, it drives the material supporting device 200 to rotate, realizing the intermittent movement of the material supporting device 200 between the working cavities. Since the threaded rod 340 is threadedly connected with the regular hexagonal sliding seat 210, the threaded rod 340 rotates to drive the regular hexagonal sliding seat 210 to ascend or descend a certain distance along the center column 170, bringing the material out of or into the working cavities.

[0045] Specifically, please refer to Figure 5 As shown, the regular hexagonal sliding seat 210 is provided with a plurality of sliding holes 211 matching the size of the sliding rod 320, and the regular hexagonal sliding seat 210 is provided with a threaded hole 212 matching the threaded rod 340, the sliding rod 320 passes through the sliding hole 211, so that the hexagonal rotating block 310, the ring block 330 and the regular hexagonal sliding seat 210 form a stable connection structure, and when the hexagonal rotating block 310 rotates, the regular hexagonal sliding seat 210 can be driven to rotate correspondingly through the sliding rod 320; the threaded rod 340 cooperates with the threaded hole 212, and when the threaded rod 340 rotates, the regular hexagonal sliding seat 210 will ascend or descend along the axial direction of the threaded rod 340, realizing the intermittent movement of the material supporting device 200 between the working cavities and the action of the material out of or into the working cavities.

[0046] Further, please refer to Figure 7As shown, the hexagonal turning block 310 is provided with a long slot 311 at each hexagonal corner, and the top surface of the dial plate 350 is welded with a dial block 351 which is sized to fit the long slot 311, and one rotation of the dial plate 350 will make the hexagonal turning block 310 rotate by one sixth of a circle, and the dial block 351 will be sequentially inserted into the long slot 311 during the rotation, thereby pushing the hexagonal turning block 310 to rotate intermittently, and each rotation of the hexagonal turning block 310 will make the hexagonal sliding seat 210 and the material supporting device 200 move accurately and intermittently between the working cavities.

[0047] Specifically, referring to Figure 2 and Figure 7 As shown, the cleaning seat 100 is provided with a second motor 360, the output shaft of the second motor 360 is coaxially connected with the dial plate 350, and the second motor 360 provides power for the rotation of the dial plate 350, and one rotation of the dial plate 350 will make the hexagonal turning block 310 rotate by one sixth of a circle.

[0048] Further, referring to Figure 2 As shown, the top end of the ring block 330 is provided with a third motor 370, the output shaft of the third motor 370 is coaxially connected with the threaded rod 340, and the rotation of the threaded rod 340 will drive the hexagonal sliding seat 210 to ascend or descend along the center column 170 after the third motor 370 is started, and this accurate ascending and descending control makes the material supporting device 200 accurately take or send the single crystal silicon wafer 243 into or out of each working cavity.

[0049] The single crystal silicon wafer ultrasonic cleaning machine with the multi-stage spray cleaning and vacuum infrared drying cleaning machine structure of the present application will first place the single crystal silicon wafer 243 to be cleaned into the placing groove 2411 of the bottom tray 241, and then cover the top cover plate 242 and clamp and fix it, to ensure that the silicon wafer is stably placed; The second motor 360 is started, and the output shaft of the second motor 360 drives the dial plate 350 to rotate, and the dial block 351 is sequentially inserted into the long slot 311 of the hexagonal turning block 310 during the rotation, thereby pushing the hexagonal turning block 310 to rotate intermittently by one sixth of a circle each time, and the hexagonal turning block 310 drives the hexagonal sliding seat 210 to rotate synchronously through the sliding rod 320, and the third motor 370 is started, and the output shaft of the third motor 370 drives the threaded rod 340 to rotate, thereby driving the hexagonal sliding seat 210 to descend along the center column 170, so that the material supporting device 200 carrying the single crystal silicon wafer 243 enters the ultrasonic cleaning cavity 110, and the multi-frequency ultrasonic generator 111 emits ultrasonic waves of different frequencies in the ultrasonic cleaning cavity 110, to remove large particles, organic film and nano-sized metal particles on the surface of the silicon wafer, respectively. After the ultrasonic cleaning is completed, the third motor 370 reversely rotates to drive the regular hexagonal slide 210 to ascend, so that the material supporting device 200 is separated from the ultrasonic cleaning cavity 110; then, the second motor 360 continues to drive the poking disc 350 to rotate, so that the material after the ultrasonic cleaning is moved to above the ozone water spraying cavity 120, and the third motor 370 drives the regular hexagonal slide 210 to descend again to send the monocrystalline silicon wafer 243 into the ozone water spraying cavity 120, and the spraying head 190 in the ozone water spraying cavity 120 uniformly sprays the chemical cleaning liquid containing ozone water, and the strong oxidizing property of ozone is used to rapidly oxidize and decompose the organic pollutants on the surface of the silicon wafer; After the ozone water cleaning is completed, the material supporting device 200 is again ascended and moved to the hydrofluoric acid spraying cavity 130 to remove the natural oxidation film and dissolve the metal impurities; then, the material supporting device 200 is sequentially moved into the alkaline spraying cavity 140 and the acidic spraying cavity 150 to remove the metal contamination and residual impurities on the surface of the silicon wafer by the chemical cleaning liquid containing ammonia water and hydrogen peroxide and the chemical cleaning liquid containing hydrochloric acid and hydrogen peroxide, respectively; During the cleaning process in each working cavity, the first motor 247 is started to drive the upper twisting block 244 to rotate, so that the bottom tray 241 and the top cover disc 242 are synchronously rotated to ensure that the monocrystalline silicon wafer 243 uniformly receives the flushing of the cleaning liquid; at the same time, the vibration tooth 221 on the mounting frame 220 is engaged with the rack 180 on the side wall of each working cavity to generate vibration, which further enhances the cleaning effect; during the ultrasonic cleaning, the disturbance plate 246 on the ring holder 245 rotates with the lower twisting block 244 to promote the flow of the cleaning liquid on the surface of the monocrystalline silicon wafer 243, thereby increasing the ultrasonic cleaning effect; Finally, the material supporting device 200 is moved to above the vacuum infrared drying cavity 160 and is descended, the vacuum pump rapidly draws out the air in the cavity to form a vacuum environment, the infrared lamp 161 emits infrared rays to heat the surface of the silicon wafer to accelerate the evaporation of water, thereby realizing the rapid drying of the silicon wafer; after the drying is completed, the material supporting device 200 is ascended to complete the entire cleaning process.

[0050] It should be noted that the above-mentioned embodiments only serve to illustrate the technical concept and characteristics of the present application, and the purpose is to enable those skilled in the art to understand the content of the present application and implement it, and cannot limit the protection scope of the present application. Any equivalent changes or modifications made according to the spirit and essence of the present application should be covered within the protection scope of the present application.

Claims

1. An ultrasonic cleaning machine for monocrystalline silicon wafers with a multi-stage spray cleaning and vacuum infrared drying cleaning structure, comprising a cleaning base and a material support device installed on the top of the cleaning base, characterized in that: The top surface of the cleaning seat is provided with an ultrasonic cleaning chamber, an ozone water spray chamber, a hydrofluoric acid spray chamber, an alkaline spray chamber, an acidic spray chamber, and a vacuum infrared drying chamber in sequence along the circumference. A central column is welded and fixed at the center of the top of the cleaning seat. An intermittent rotating device is installed around the central column at the top of the cleaning seat. The intermittent rotating device drives the material in the material support device to move sequentially between the working chambers. The material support device includes a regular hexagonal slide block slidably connected to a central column, a mounting frame welded and fixed to the center of each side of the regular hexagonal slide block, and a material support assembly rotatably connected to the end of the mounting frame; the material support assembly includes torsion blocks rotatably connected to the upper and lower sides of the end of the mounting frame, and a bottom tray and a top cover plate rotatably connected between the two torsion blocks and capable of engaging with each other, and a number of monocrystalline silicon wafers can be fixed between the bottom tray and the top cover plate; The intermittent rotation device includes a hexagonal rotating block rotatably connected to the cleaning seat, a ring block rotatably connected to the central column, a plurality of sliding rods connecting the hexagonal rotating block and the ring block, and a dial rotatably connected to the cleaning seat. A threaded rod that is threadedly connected to a regular hexagonal sliding seat is rotatably connected between the hexagonal rotating block and the ring block.

2. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 1, characterized in that: The ultrasonic cleaning chamber is regularly equipped with several multi-frequency ultrasonic generators, which can emit ultrasonic waves of 40kHz, 80kHz and 170kHz. The vacuum infrared drying chamber is equipped with a vacuum pump and several infrared lamps.

3. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 2, characterized in that: Each of the ozone water spray chamber, the diluted hydrofluoric acid spray chamber, the alkaline spray chamber, and the acidic spray chamber is regularly equipped with several spray heads. The spray heads in the ozone water spray chamber are connected to a chemical cleaning solution containing ozone water. The spray heads in the hydrofluoric acid spray chamber are connected to a chemical cleaning solution containing diluted hydrofluoric acid. The spray heads in the alkaline spray chamber are connected to a chemical cleaning solution containing ammonia and hydrogen peroxide. The spray heads in the acidic spray chamber are simultaneously connected to a chemical cleaning solution containing hydrochloric acid and hydrogen peroxide and a pure water cleaning solution.

4. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 3, characterized in that: The mounting frame is equipped with sealing covers that are compatible with the working chambers on the cleaning seat. Several vibrating teeth are welded and fixed to the bottom side of the vertical plate of the mounting frame. A rack is installed on one side wall of each working chamber on the cleaning seat. The vibrating teeth and racks in the corresponding positions mesh with each other when they descend and intersect.

5. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 4, characterized in that: A first motor is mounted on the top end of the mounting bracket, and the output shaft of the first motor is coaxially connected to the torsion block rod located above.

6. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 5, characterized in that: The bottom tray has several mounting slots, and a ring bracket is welded and fixed to the bottom end of the torsion block rod located below. A few disturbance plates are installed on the top of the ring bracket.

7. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 6, characterized in that: Each of the six corners of the hexagonal rotating block is provided with a long groove. A toggle block is welded and fixed to the side of the top surface of the toggle disk. The size of the toggle block is adapted to the long groove. When the toggle disk rotates one revolution, the hexagonal rotating block rotates one-sixth of a revolution.

8. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 7, characterized in that: A second motor is installed inside the cleaning seat, and the output shaft of the second motor is coaxially connected to the actuation disk.

9. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 8, characterized in that: A third motor is installed at the top of the ring block, and the output shaft of the third motor is coaxially connected to the threaded rod.

10. The ultrasonic cleaning machine for single-crystal silicon wafers with multi-stage spray cleaning and vacuum infrared drying cleaning structure according to claim 9, characterized in that: The regular hexagonal slide block has a plurality of sliding holes adapted to the size of the slide rod, and the regular hexagonal slide block has a threaded hole adapted to the threaded rod.

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