Wafer calibration port processing methods, equipment, dielectrics, chips, and wafer dicing equipment

Abstract

This invention provides a method, apparatus, medium, chip, and wafer dicing equipment for processing wafer calibration ports, relating to the field of chip processing technology. The wafer calibration port processing method includes: acquiring shape parameters of a calibration port matching the wafer to be processed, including notch depth parameters, notch angle parameters, and fillet parameters; controlling the movement of the dicing spindle until the grinding wheel covers the wafer in the thickness direction, and the axis of the wafer is perpendicular to the axis of the grinding wheel; determining the processing curve path of the grinding wheel based on the shape parameters, with both ends of the processing curve path located at the edge of the wafer; and controlling the movement of the dicing spindle and / or the stage according to the processing curve path to process the calibration port at the edge of the wafer. This invention reduces reliance on manual labor and experience-based adjustments, lowers processing quality fluctuations, and improves processing efficiency and yield.

Description

Technical Field

[0001] This invention relates to the field of chip processing technology, and more specifically, to a method, apparatus, medium, chip, and wafer dicing equipment for processing wafer calibration ports. Background Technology

[0002] Currently, in semiconductor manufacturing, inspection, and handling processes, notches or calibration ports are typically formed at the wafer edge for positioning and identification to achieve wafer orientation recognition, alignment, and inter-process traceability. The geometry of the notch or calibration port and its spatial positional accuracy at the wafer edge affect the alignment accuracy, handling and identification stability, and inspection consistency in subsequent processes. Therefore, equipment for wafer notch or calibration port processing usually needs to achieve high contour accuracy, positional accuracy, and batch consistency while ensuring cycle time. In related technologies, the notch or calibration port contour typically includes a combination of straight and curved segments, and is highly sensitive to motion tracking accuracy when cutting into and out of the wafer edge region. When existing equipment executes the processing path, if there are assembly errors, orthogonal errors, straightness errors, or positioning repeatability errors in the motion axis, or if there are speed fluctuations and tracking lags during interpolation motion, contour tracking errors may occur, manifesting as contour shrinkage or expansion, discontinuities at endpoint connections, and fillet radius drift. Especially in scenarios involving switching between different wafer specifications, parameter switching, or continuous batch processing, the cumulative effect of the above errors is more likely to cause fluctuations in processing quality. Summary of the Invention

[0003] The present invention aims to at least solve the technical problem of processing quality fluctuations existing in the prior art or related technologies.

[0004] In view of this, the technical solution of the present invention provides a method for processing wafer calibration ports.

[0005] The present invention provides an electronic device.

[0006] The technical solution of the present invention provides a readable storage medium.

[0007] The present invention provides a chip.

[0008] The technical solution of the present invention provides a wafer dicing device.

[0009] To achieve the above objectives, the present invention provides a wafer calibration port processing method for a wafer dicing apparatus. The wafer dicing apparatus includes a base and a dicing spindle and a stage mounted on the base. One end of the dicing spindle is provided with a grinding wheel. The stage is used to fix the wafer to be processed. The wafer to be processed includes a first surface facing the stage and a second surface away from the stage. The stage can move along a first direction of the base, and the dicing spindle can move along a second direction of the base. The wafer calibration port processing method includes: obtaining shape parameters of a calibration port matching the wafer to be processed, including notch depth parameters, notch angle parameters, and fillet parameters; controlling the dicing spindle to move until the grinding wheel covers the wafer to be processed in the thickness direction of the wafer to be processed, and the axis of the wafer to be processed is perpendicular to the axis of the grinding wheel; determining the processing curve path of the grinding wheel according to the shape parameters, with both ends of the processing curve path located at the edge of the wafer to be processed; and controlling the dicing spindle and / or the stage to move according to the processing curve path to process the calibration port at the edge of the wafer to be processed.

[0010] The wafer calibration port processing method proposed in this invention achieves closed-loop control from parameter input to trajectory processing on a wafer dicing machine. This allows the calibration port shape to be directly driven by notch depth, notch angle, and fillet parameters, reducing reliance on manual labor and experience-based adjustments, minimizing processing quality fluctuations, and improving processing efficiency and yield. Through the coordinated orthogonal movement of the stage and dicing spindle, in conjunction with the grinding wheel, a stable and repeatable two-dimensional contour motion can be formed, ensuring the geometric consistency of the processing curve path. By locking the cutting section relationship, the risks of oblique cutting, off-center cutting, edge chipping, and fillet distortion are reduced. The opening of the calibration port is continuously connected to the outer edge of the wafer, avoiding defects such as incomplete penetration, excessive cutting depth, and end-point steps.

[0011] It is important to emphasize that using a fixed-shape grinding wheel cannot guarantee accuracy, requiring frequent tool changes and sharpening, and producing irregularly shaped grinding wheels is also quite difficult. This solution, however, only requires alignment and contact height measurement before cutting. The wafer to be processed is then machined according to the shape parameters of the calibration aperture, facilitating the determination of blade wear and enabling high-precision cutting. The geometric accuracy, positional accuracy, batch consistency, and processing stability of the calibration aperture are simultaneously improved. When adapting to different wafer sizes, only the shape parameters and trajectory calculation results need to be changed, demonstrating excellent process portability.

[0012] In some technical solutions, the wafer dicing equipment may optionally include a turntable structure, which is mounted on a base and a stage is mounted on the turntable structure. The turntable structure can rotate relative to the dicing spindle to adjust the relative position and orientation of the wafer to be processed and the grinding wheel.

[0013] In this solution, by adding a turntable structure, the adjustable capability of the wafer dicing equipment in terms of the relative position and orientation of the wafer to be processed and the grinding wheel is improved, making the calibration port processing process more stable in terms of orientation establishment, trajectory execution and contour consistency, especially suitable for the formulation switching scenario of multi-specification wafers to be processed.

[0014] In some technical solutions, optionally, the wafer dicing equipment also includes an observation axis that can move along a second direction of the base, with an image device at one end; determining the machining curve path of the grinding wheel according to shape parameters includes: controlling the observation axis to move to the edge position of the wafer to be processed; determining the center coordinates of the wafer to be processed according to the edge position; and determining the machining curve path according to the center coordinates and shape parameters.

[0015] In this technical solution, both the observation axis and the cutting spindle are arranged along the second direction on the base, enabling the observation axis to perform position observation and geometric measurement of the wafer to be processed under the same motion reference as the cutting spindle. The imaging device is used to acquire image information of the edge of the wafer to be processed to obtain edge position data for processing positioning.

[0016] This solution achieves non-contact measurement of the edge of the wafer to be processed through an observation axis and an imaging device, improving positioning reliability; it eliminates the influence of wafer loading eccentricity on the calibration port position by determining the center coordinates based on the edge position; it ensures that the geometry and spatial position of the calibration port are controlled simultaneously by determining the processing curve path together with the center coordinates and shape parameters; and it can maintain a consistent correspondence between the processing curve path and the wafer edge under different relative postures when used in conjunction with the turntable structure.

[0017] In some technical solutions, optionally, before determining the center coordinates of the wafer to be processed based on the edge position, the wafer calibration port processing method further includes: controlling the rotation of the wafer to be processed through a turntable structure, and determining at least three edge coordinates of the wafer to be processed through an imaging device.

[0018] In this scheme, the rotation of the wafer to be processed is controlled by a turntable structure, allowing the imaging device to acquire edge coordinates from different orientations without moving. This expands the original single-sided local measurement to multi-angle measurement, reducing the impact of imaging device installation errors or local edge defects on the center calculation results. By limiting the number of edge coordinates to at least three, the minimum geometric condition for determining the center is met, and geometric uncertainties caused by calculations based on only single or two points are avoided. When the number of edge coordinates is greater than three, the center coordinates can be determined by least-squares fitting. This suppresses measurement deviations caused by local edge chipping, defects, or image noise, improves the accuracy of center coordinate calculation, and enhances the consistency of the calibration port processing position.

[0019] In some technical solutions, optionally, the cutting spindle is moved until the grinding wheel covers the wafer in the thickness direction of the wafer to be processed. Specifically, this includes controlling the cutting spindle to move until the axis of the grinding wheel is located between the plane of the first surface and the plane of the second surface in the thickness direction of the wafer to be processed.

[0020] In this technical solution, when the axis of the grinding wheel deviates from the area between the plane containing the first surface and the plane containing the second surface, the effective cutting area between the grinding wheel and the wafer edge will be biased towards the first surface side or the second surface side. This can easily lead to asymmetrical removal of the calibration opening in the thickness direction, manifested as sidewall tilting, differences in edge chipping between the upper and lower edges, and inconsistencies in the transition section corresponding to the fillet parameters at the upper and lower surfaces. Constraining the axis of the grinding wheel between the two planes allows the cutting action to be closer to the symmetrical state of the thickness center, thereby improving the consistency of the calibration opening sidewall and the consistency of fillet forming.

[0021] In some technical solutions, the wafer calibration port processing method may optionally include: a loading platform, located on a base, the loading platform having a material box for accommodating multiple wafers to be processed; and a robotic arm, located on the base, for moving the wafers to be processed from the material box to the stage.

[0022] In this technical solution, the cassette holds multiple wafers to be processed, enabling continuous multi-wafer processing with a single loading and reducing cycle time fluctuations caused by frequent manual loading. The loading platform is located on the base, and the cassette is fixed to the loading platform, stabilizing the initial position of the wafers and reducing the probability of misalignment on the stage. This minimizes the pressure on subsequent center coordinate calculations and compensation for the processing curve path. The robotic arm moves the wafers from the cassette to the stage, avoiding the randomness of wafer orientation, edge bumps, and contamination risks caused by manual handling, thereby improving the reliability and consistency of edge coordinate acquisition by subsequent imaging devices.

[0023] In some technical solutions, the wafer calibration port processing method may optionally include: a cleaning device, disposed on a base, wherein a robotic arm is used to clean the wafer to be processed in the cleaning device after the calibration port processing is completed, and to place the cleaned device in a material box.

[0024] In this technical solution, the calibration port is cleaned immediately after processing in the cleaning device, which can reduce the adhesion of cutting residues to the edge of the wafer to be processed and the first or second surface, reduce the risk of misjudgment during subsequent inspection or verification, and reduce the probability of particles being carried into the next process.

[0025] Another technical solution of the present invention provides an electronic device, which includes a first processor, a memory, and a program or instructions stored in the memory and executable on the first processor. When the program or instructions are executed by the first processor, they implement the steps of the method as described in the first aspect.

[0026] Another technical solution of the present invention provides a readable storage medium on which a program or instructions are stored, and when the program or instructions are executed by a processor, the steps of the method as described in the first aspect are implemented.

[0027] Another technical solution of the present invention provides a chip, the chip including a second processor and a communication interface, the communication interface and the second processor being coupled, the second processor being used to run programs or instructions to implement the steps of the method as described in the first aspect.

[0028] Another technical solution of the present invention provides a wafer dicing device, including: a base and a dicing spindle and a stage disposed on the base. One end of the dicing spindle is provided with a grinding wheel. The stage is used to fix the wafer to be processed. The stage can move along a first direction of the base, and the dicing spindle can move along a second direction of the base. The wafer dicing device realizes the wafer calibration port processing method described above.

[0029] Beyond cutting, the equipment possesses the capability to observe the edges of the wafer to be processed and establish processing positioning criteria. This allows for measurable, reproducible, and corrective determination and placement of the processing curve path. After acquiring edge information, the processing reference standard changes from the clamping position of the stage to the actual edge position of the wafer to be processed. The trajectory execution in the first and second directions more easily corresponds to the geometry of the actual workpiece, resulting in smaller batch-to-batch fluctuations in endpoint placement, depth, angle, and fillet radius.

[0030] In some technical solutions, the wafer dicing equipment may optionally include: an observation axis, movably mounted on a base, the observation axis extending along the height direction of the base, and an image device provided at one end of the observation axis; wherein the observation axis can move along a second direction of the base.

[0031] The observation axis and the cutting spindle share the motion reference in the second direction. The positioning error of measurement and machining in the same direction is easier to be consistent and controllable, reducing the deviation caused by the inconsistency between the measurement reference and the machining reference.

[0032] Additional aspects and advantages of the invention will become apparent in the following description or may be learned by practice of the invention. Attached Figure Description

[0033] Figure 1 One of the schematic diagrams of a wafer dicing apparatus according to an embodiment of the present invention is shown;

[0034] Figure 2A second schematic diagram of a wafer dicing apparatus according to an embodiment of the present invention is shown;

[0035] Figure 3 A third schematic diagram of a wafer dicing apparatus according to an embodiment of the present invention is shown;

[0036] Figure 4 A fourth schematic diagram of a wafer dicing apparatus according to an embodiment of the present invention is shown;

[0037] Figure 5 One of the partial structural schematic diagrams of a wafer dicing apparatus according to an embodiment of the present invention is shown;

[0038] Figure 6 A second partial structural schematic diagram of a wafer dicing apparatus according to an embodiment of the present invention is shown;

[0039] Figure 7 A third partial structural schematic diagram of a wafer dicing apparatus according to an embodiment of the present invention is shown;

[0040] Figure 8 A schematic diagram of the corresponding structure of the wafer to be processed and the grinding wheel according to an embodiment of the present invention is shown;

[0041] Figure 9 A schematic diagram showing the corresponding structure of the machining curve path and the grinding wheel according to an embodiment of the present invention is shown;

[0042] Figure 10 One of the schematic flowcharts of a wafer calibration port fabrication method according to an embodiment of the present invention is shown;

[0043] Figure 11 A second schematic flowchart of a wafer calibration port fabrication method according to an embodiment of the present invention is shown;

[0044] Figure 12 A schematic block diagram of an electronic device according to an embodiment of the present invention is shown;

[0045] Figure 13 A schematic block diagram of a chip structure according to an embodiment of the present invention is shown.

[0046] Among them, 1: wafer dicing equipment; 11: base; 12: dicing spindle; 121: grinding wheel; 13: stage; 14: turntable structure; 15: observation axis; 151: imaging device; 16: loading platform; 161: material box; 17: robotic arm; 18: cleaning device; 19: water spray cover;

[0047] 2: Wafer to be processed; 21: First surface; 22: Second surface;

[0048] 100: Electronic device; 1109: Memory; 1110: First processor;

[0049] 200: Chip; 2109: Communication interface; 2110: Second processor. Detailed Implementation

[0050] To better understand the above-described objectives, features, and advantages of the embodiments of the present invention, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other.

[0051] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, embodiments of the invention may also be implemented in other ways different from those described herein. Therefore, the scope of protection of this application is not limited to the specific embodiments disclosed below.

[0052] Currently, two main methods are used for processing wafer notch positioning holes (i.e., calibration notches): laser cutting and mechanical cutting. Wafer notch cutting equipment is a key specialized piece of equipment in the front-end processes of semiconductor manufacturing. It is mainly used to process a specific shape of "notch notch" (or "flat edge," the two have similar functions, notch is an arc-shaped notch, and flat is a straight flat edge) on the edge of a circular wafer. Its core function is to provide a physical positioning reference for the wafer, ensuring that the wafer can be accurately aligned with the process coordinates in subsequent processes such as photolithography, etching, and thin film deposition, and avoiding chip manufacturing deviations caused by wafer rotation offset.

[0053] For mainstream wafer sizes such as 6-inch, 8-inch, and 12-inch (made of silicon-based, silicon carbide, gallium nitride, etc.), we process notch notches that conform to SEMI international standards.

[0054] The following reference Figures 1 to 13 Some embodiments of the present invention are described.

[0055] This embodiment provides a method for fabricating a wafer calibration port, such as... Figure 1 and Figure 3As shown, closed-loop control from parameter input to trajectory processing is achieved on the wafer dicing equipment 1, allowing the shape of the calibration port to be directly driven by notch depth, notch angle, and fillet parameters, reducing reliance on manual labor and experience-based adjustments. Through the coordinated orthogonal movement of the stage 13 and the dicing spindle 12, in conjunction with the grinding wheel 121, a stable and repeatable two-dimensional contour motion can be formed, ensuring the geometric consistency of the processing curve path. By locking the cutting section relationship, the risks of oblique cutting, off-center cutting, edge chipping, and fillet distortion are reduced. The opening of the calibration port is continuously connected to the outer edge of the wafer, avoiding defects such as incomplete penetration, excessive cutting, and end-point steps.

[0056] It is important to emphasize that using a fixed-shape grinding wheel 121 cannot guarantee accuracy, requiring frequent tool changes and sharpening. Producing irregularly shaped grinding wheels 121 is also quite difficult. This solution, however, only requires alignment and contact height measurement before cutting. The wafer to be processed is then processed according to the shape parameters of the calibration aperture, facilitating the determination of blade wear and enabling high-precision cutting. The geometric accuracy, positional accuracy, batch consistency, and processing stability of the calibration aperture are simultaneously improved. When adapting to different wafer specifications, only the shape parameters and trajectory calculation results need to be changed, demonstrating excellent process portability.

[0057] Specifically, the base 11 provides a unified geometric reference and rigid support, reducing relative drift of the kinematic chain; when in hot or long-term operation, it can still maintain the relative orthogonal accuracy of the first / second direction.

[0058] The cutting spindle 12 and the stage 13, mounted on the base 11, share a coordinate system and assembly datum, facilitating calibration and compensation. Compared to a separate system, this reduces the superposition of cross-platform errors and improves the accuracy of machining curve path placement. A grinding wheel 121 is mounted at one end of the cutting spindle 12, rigidly coupling the cutting actuator to the end of the rotary drive element. This ensures the rotational accuracy of the grinding wheel 121, end runout control, and stable cutting speed. The end-end arrangement facilitates tool entry and exit in edge areas, reducing structural interference.

[0059] The stage 13 is used to fix the wafer to be processed, providing constraints on the wafer and limiting translation, rotation, and vibration during processing. It maintains the spatial orientation stability between the first and second surfaces, avoiding deviations in the calibration aperture angle and depth due to micro-slippage; for thin wafers, it can reduce chattering and edge chipping caused by cutting excitation.

[0060] The stage 13 can move along the base 11 in a first direction to realize the one-dimensional trajectory component in the calibration orifice contour, and form planar interpolation in conjunction with the second direction; the resolution of the first direction directly affects the accuracy of the notch depth and the positioning accuracy of the endpoints. The cutting spindle 12 can move along the base 11 in a second direction, forming a dual-axis contour machining capability with the first direction, ensuring smooth fillet transition and angle segment interpolation; the response performance of the second direction determines the trajectory following error and contour fidelity.

[0061] In the thickness direction of the wafer to be processed, the grinding wheel 121 covers the wafer to be processed, ensuring the integrity of the effective cutting section and avoiding asymmetric notches caused by cutting only the upper or lower edge; it is beneficial to have consistent notch edge morphology and reduce local stress concentration.

[0062] The axis of the wafer to be processed is perpendicular to the axis of the grinding wheel 121, which constrains the relative posture of the two rotating bodies or geometric center lines, obtains stable cutting contact geometry, and reduces elliptic cut marks and sidewall tilting.

[0063] In one embodiment, such as Figure 10 As shown, the method includes the following steps:

[0064] S1: Obtain the shape parameters of the calibration port that match the wafer to be processed.

[0065] The shape parameters include notch depth, notch angle, and fillet radius.

[0066] In this step, a processing recipe can be established based on the specifications of the wafer to be processed, and the shape parameters can be output from the processing recipe to ensure that wafers of different specifications correspond to different calibration port target shapes.

[0067] Establish a parameterized mapping between the wafers to be processed and the calibration ports. The same equipment can switch between different product formulations, enabling flexible manufacturing; improving changeover efficiency and formulation traceability. For wafers of different diameters and materials, only parameters need to be changed within the same algorithm framework; this facilitates the reuse of historically optimal yield parameters and shortens the setup time for new batches.

[0068] Optionally, the notch depth parameter determines the amount by which the calibration port extends inwards into the wafer, directly affecting the engagement stability of the subsequent positioning mechanism with the notch; too small a depth will lead to unstable identification, while too large a depth may weaken the edge strength. The notch angle parameter determines the geometric direction and range of the opening, affecting the equipment's vision / mechanical orientation window; the better the angle consistency, the higher the repeatability of the production line alignment. The fillet parameter controls the transition curvature, reducing stress concentration at sharp corners and the probability of microcrack initiation; for brittle material wafers, it can significantly improve the notch's resistance to edge chipping. These three parameters together define the geometric functionality and reliability of the calibration port.

[0069] S2: Control the movement of the cutting spindle until the grinding wheel covers the wafer in the thickness direction of the wafer to be processed, and the axis of the wafer to be processed is perpendicular to the axis of the grinding wheel.

[0070] In this step, by adjusting the position of the cutting spindle in the second direction, the grinding wheel and the wafer to be processed are made to overlap in the thickness direction; at the same time, the relative orientation of the wafer to be processed and the grinding wheel are adjusted so that the axis of the wafer to be processed is perpendicular to the axis of the grinding wheel. This provides a stable geometric reference for subsequent processing along the processing curve path.

[0071] Spatial alignment and attitude convergence are completed before machining. The grinding wheel covers the wafer to be machined to ensure sufficient cutting section and reduce load imbalance caused by unilateral cutting; the perpendicular axis suppresses the contour projection error, making the curve calculated according to parameters closer to the actual cutting trajectory; it is more robust to tool wear conditions and avoids amplifying the wear effect due to attitude deviation.

[0072] S3: Determine the machining curve path of the grinding wheel based on the shape parameters.

[0073] Both ends of the processing curve path are located at the edge of the wafer to be processed.

[0074] In this step, such as Figure 9 As shown, the notch depth parameter, notch angle parameter, and fillet parameter can be converted into processing curve path control points or trajectory segments, so that the processing curve path is consistent with the shape of the target calibration port, and the endpoint constraint ensures that the calibration port opening is located at the edge of the wafer to be processed.

[0075] The notch depth, notch angle, and fillet parameters are converted into executable trajectories. This results in standardized, verifiable, and recalculated machining instructions, ensuring consistent contours under the same parameters. The trajectory can be decomposed into straight line segments and circular arc / spline segments to satisfy continuous transitions in fillet parameters. Trajectory planning can incorporate velocity or acceleration constraints to reduce inflection point impact and improve edge quality.

[0076] Ensure the calibration port is naturally connected to the outer edge, meeting the functional requirement that the positioning port opens at the edge. Avoid starting and ending points falling inside the edge, which could lead to false gaps or residual bridging; improve the consistency of visual inspection, and ensure clear endpoint features.

[0077] S4: Control the cutting spindle and / or stage to move according to the processing curve path to process calibration holes on the edge of the wafer to be processed.

[0078] In this step, the cutting spindle moves in the second direction, and the stage moves in the first direction. Together, they form the trajectory of the grinding wheel relative to the wafer to be processed, thus completing the calibration aperture cutting process. After processing, a calibration aperture geometric profile corresponding to the shape parameters is formed.

[0079] It is understandable that the cutting spindle can be controlled to move in the second direction, the stage can be controlled to move in the first direction, or the cutting spindle and the stage can be controlled to move in the second and first directions respectively, as long as the calibration port can be processed on the edge of the wafer to be processed according to the processing curve path.

[0080] Perform trajectory interpolation cutting to complete solid removal and shaping. Transform the parameter target into physical geometry to achieve the calibration function. Continuous movement along the path reduces tool marks from pauses and improves contour smoothness; cutting at the edge region minimizes interference with the effective area of ​​the wafer.

[0081] When combined with the preceding attitude alignment, the batch deviation of the calibration port can be compressed into a stable window.

[0082] Through the above S1 to S4, a closed-loop machining process of parameter definition, attitude constraint, trajectory generation and trajectory execution can be realized, improving the consistency of calibration port machining and forming accuracy.

[0083] In this embodiment, S1 includes:

[0084] S11: Obtain the target specifications of the wafer to be processed;

[0085] S12: Call the preset parameter group according to the target specification;

[0086] S13: Use the notch depth parameter, notch angle parameter, and fillet parameter in the preset parameter group as shape parameters.

[0087] The preset parameter groups can be categorized and stored according to the specifications of the wafers to be processed. By calling the preset parameter groups, the time for changing and adjusting parameters can be shortened, and the impact of human input errors on the processing results can be reduced.

[0088] S2 includes:

[0089] S21: Control the cutting spindle to move along the second direction to the predetermined position;

[0090] S22: Based on the thickness direction position relationship between the first and second surfaces of the wafer to be processed, fine-tune the position of the cutting spindle so that the grinding wheel covers the wafer to be processed in the thickness direction.

[0091] S23: Adjust the relative orientation of the wafer to be processed and the grinding wheel so that the axis of the wafer to be processed is perpendicular to the axis of the grinding wheel.

[0092] By using S21 to S23, the relative positional deviation between the grinding wheel and the wafer to be processed can be reduced, thereby reducing the risk of contour distortion during the execution of subsequent processing curve paths.

[0093] In S3, determining the machining curve path of the grinding wheel based on shape parameters includes:

[0094] S31: Determine the position of the maximum incision depth of the machining curve path based on the notch depth parameter;

[0095] S32: Determine the direction of both sides of the machining curve path based on the notch angle parameter;

[0096] S33: Determine the curvature of the transition segment of the machining curve path based on the fillet parameters;

[0097] S34: Constrain the start and end points of the processing curve path to the edge of the wafer to be processed to obtain the final processing curve path.

[0098] By using the above method, the processing curve path can be made consistent with the target calibration opening in terms of depth, angle and fillet transition, and the functional requirements of the edge opening can be met.

[0099] S4 includes:

[0100] S41: Control the stage to move along the first direction;

[0101] S42: Controls the cutting spindle to move along the second direction;

[0102] S43: Synchronize control of S41 and S42 according to the processing curve path to process calibration holes at the edge of the wafer to be processed.

[0103] In this embodiment, interpolation processing is achieved through the coordinated movement of the first direction and the second direction, so that the grinding wheel moves continuously along the processing curve path relative to the wafer to be processed, thereby improving the continuity of the calibration profile.

[0104] Optionally, the processing curve path is a continuous curve, with both ends located at the edges of the wafer to be processed. Setting the curve continuously can reduce abrupt changes in trajectory splicing; edge constraints at both ends can ensure that the start and end positions of the calibration port are clear, facilitating subsequent identification and positioning.

[0105] Following S4 are:

[0106] S5: Perform shape verification on the processed calibration port;

[0107] When the verification result matches the shape parameters, the current wafer to be processed is determined to be completed; when the verification result does not match the shape parameters, a compensation processing command is output.

[0108] By adding S5, processing result feedback can be generated, further improving batch processing consistency. The aforementioned compensating processing instructions can correct the processing curve path based on the verification deviation.

[0109] Specifically, on a wafer to be processed, any of the above methods are executed. First, the notch depth parameters, notch angle parameters, and fillet parameters matching the wafer to be processed are obtained. Then, the grinding wheel covers the wafer to be processed in the thickness direction, and the axis of the wafer to be processed is perpendicular to the axis of the grinding wheel. Subsequently, a processing curve path is generated according to the shape parameters, and the two ends of the processing curve path are constrained to the edge of the wafer to be processed. Finally, the cutting spindle is controlled to move according to the processing curve path to complete the calibration notch processing. This method can stably map shape parameters to the calibration notch profile and is suitable for multi-recipe switching processing scenarios based on the same wafer cutting equipment.

[0110] In some embodiments, the turntable structure can optionally serve as an angular adjustment unit for the stage, allowing the wafer to be processed to gain angular freedom in the plane by rotating relative to the cutting spindle 12. Since the stage is mounted on the turntable structure, the wafer to be processed rotates synchronously with the stage, thereby enabling rapid adjustment of the relative position and orientation between the wafer to be processed and the grinding wheel 121 without changing the basic installation relationship of the cutting spindle 12.

[0111] In this embodiment, S2 may further include: controlling the turntable structure to rotate relative to the cutting spindle so that the axis of the wafer to be processed is perpendicular to the axis of the grinding wheel; after the turntable structure rotates, coordinating the movement of the cutting spindle along the second direction and the movement of the stage along the first direction to adjust the coverage relationship between the grinding wheel and the wafer to be processed in the thickness direction.

[0112] The above scheme decouples angular attitude adjustment from linear position adjustment, allowing attitude correction to be performed by a turntable structure and position alignment to be achieved by movements in the first and second directions. This reduces the reliance on repeated linear axis compensation during the attitude adjustment process, improving alignment efficiency and stability.

[0113] Furthermore, in S3, when determining the machining curve path of the grinding wheel based on the shape parameters, a coordinate mapping relationship for the machining curve path can be established by combining the current rotation angle of the turntable structure. This ensures that the constraint that both ends of the machining curve path are located at the edge of the wafer to be processed holds true under different rotation angle conditions. This guarantees that even if the turntable structure undergoes angle adjustment, the target contours corresponding to the notch depth parameters, notch angle parameters, and fillet parameters of the calibration port can still accurately fall on the edge region of the wafer to be processed.

[0114] Furthermore, in S4, when controlling the cutting spindle to move according to the machining curve path to machine the calibration opening at the edge of the wafer to be processed, a control method of pre-adjustment of the turntable structure and coordinated interpolation in the first or second direction can be adopted. That is, the turntable structure first adjusts the wafer to be processed to the target relative posture, and then the first and second direction trajectory machining is executed. This method can reduce posture disturbances during trajectory execution and improve the continuity of the calibration opening edge transition and the consistency of processing.

[0115] This embodiment improves the adjustability of the relative position and orientation of the wafer to be processed and the grinding wheel by adding a turntable structure, making the calibration port processing process more stable in terms of orientation establishment, trajectory execution and contour consistency, and is especially suitable for the formulation switching scenario of multi-specification wafers to be processed.

[0116] In some embodiments, optionally, the observation axis and the cutting spindle are arranged in the same direction on the base, so that the observation axis can perform position observation and geometric measurement of the wafer to be processed under the same motion reference as the cutting spindle. The imaging device is used to acquire edge image information of the wafer to be processed to obtain edge coordinate data for processing positioning.

[0117] In this embodiment, as Figure 11 As shown, determining the machining curve path of the grinding wheel based on its shape parameters includes the following steps:

[0118] S301: Controls the observation axis to move along the second direction of the base to the edge of the wafer to be processed.

[0119] In this step, the image device is aligned with the edge region of the wafer to be processed by driving the observation axis to move, so as to ensure that the acquired image can accurately reflect the edge contour features of the wafer to be processed.

[0120] S302: Determine the center coordinates of the wafer to be processed based on the edge position.

[0121] Specifically, the imaging device acquires multiple edge coordinate points of the edge of the wafer to be processed, and performs circle fitting calculations based on the edge positions to obtain the center coordinates of the wafer. By calculating the center coordinates, a processing coordinate reference based on the wafer to be processed can be established in the device coordinate system.

[0122] S303: Determine the machining curve path based on the center coordinates and shape parameters.

[0123] In this step, the center coordinates are used as the geometric reference center for the machining curve path. Combined with notch depth parameters, notch angle parameters, and fillet parameters, a machining curve path based on the center coordinates is generated. Both ends of the machining curve path are located at the edges of the wafer to be processed, ensuring that the calibration port forms an opening structure at the edge of the wafer.

[0124] The above steps enable the establishment of center coordinates based on the actual edge position of the wafer to be processed before actual processing, thereby avoiding the problem of mismatch between the processing curve path and the actual position of the wafer due to wafer placement eccentricity, posture deviation or clamping error.

[0125] It is understandable that the edge coordinates and center coordinates obtained by the observation axis can be used together with the current rotation angle of the turntable structure to participate in the coordinate mapping calculation of the processing curve path, so that the processing curve path can still accurately fall on the edge area of ​​the wafer to be processed after the turntable structure adjusts the relative posture of the wafer to be processed.

[0126] Therefore, by introducing an observation axis and an image device, this embodiment transforms the determination of the machining curve path from the theoretical center to the measured center, effectively improving the machining position accuracy, angle consistency, and batch machining stability of the calibration port.

[0127] In summary, this solution achieves non-contact measurement of the edge of the wafer to be processed through the observation axis and imaging device, thereby improving positioning reliability; it eliminates the influence of wafer loading eccentricity on the calibration port position by determining the center coordinates based on the edge coordinates; it ensures that the geometry and spatial position of the calibration port are controlled simultaneously by determining the processing curve path together with the center coordinates and shape parameters; and it can maintain a consistent correspondence between the processing curve path and the wafer edge under different relative postures when used in conjunction with the turntable structure.

[0128] In some embodiments, the turntable structure 14 is optionally disposed on the base 11, and the stage 13 is disposed on the turntable structure 14. Therefore, when the turntable structure 14 rotates, the wafer 2 to be processed rotates synchronously with the stage 13. In this embodiment, by controlling the rotation of the turntable structure 14 relative to the cutting spindle 12, the wafer 2 to be processed passes through the observation area of ​​the image device 151 sequentially at different angular positions.

[0129] At each rotational position, such as Figure 1 As shown, the imaging device 151 acquires an image of the edge of the wafer 2 to be processed and extracts the corresponding edge coordinates. By continuously or intermittently rotating the turntable structure 14, the edge coordinates at at least three different angular positions are obtained.

[0130] Since any three non-collinear points can uniquely determine a circle, the center coordinates of the wafer 2 to be processed can be determined by fitting calculations using at least three edge coordinates. Furthermore, when the number of obtained edge coordinates is greater than three, a multi-point fitting method can be used to determine the center coordinates, thereby reducing the impact of single-point measurement errors on the results.

[0131] The rotating wafer 2 is controlled by the turntable structure 14, so that the image device 151 can obtain the edge coordinates of different orientations without moving; the original one-sided local measurement is expanded to multi-angle measurement; and the impact of the installation error or local edge defect of the image device 151 on the center calculation result is reduced.

[0132] By restricting the coordinates to at least three edge coordinates, the minimum geometric condition for determining the center of the circle is met on the one hand, and the geometric uncertainty caused by calculation based on only a single point or two points on the other hand is avoided.

[0133] When the number of edge coordinates is greater than three, the center coordinates can be determined by least squares fitting; this can suppress measurement deviations caused by local edge chipping, defects, or image noise; improve the accuracy of center coordinate calculation; and enhance the consistency of calibration port processing positions.

[0134] It is understandable that during the wafer calibration port processing, the spatial position and shape errors of the calibration port usually originate from factors such as inconsistency between clamping and measurement references, superposition of geometric errors of the motion axis, and relative attitude deviation between the tool and the wafer. Specifically: First, the stage 13 is used to fix the wafer 2 to be processed, but the placement of the wafer 2 on the stage 13 inevitably involves eccentricity and slight angular deviation, causing the theoretical center based on the equipment coordinate system to be inconsistent with the actual geometric center of the wafer 2 to be processed. This results in an overall spatial offset of the processing curve path determined according to the shape parameters, further causing the endpoint positioning error of the calibration port relative to the edge of the wafer 2 to be processed. Second, the cutting spindle 12 can move along the second direction of the base 11, and the stage 13 can move along the first direction of the base 11. The orthogonality error and straightness of the first and second directions are related to these factors. Errors and positioning repeatability errors will be superimposed as contour following errors during interpolation, manifested as opening angle deviations corresponding to notch angle parameters, cutting depth deviations corresponding to notch depth parameters, and transition curvature distortions corresponding to fillet parameters. Thirdly, if the axis of the wafer to be processed 2 is not perpendicular to the axis of the grinding wheel 121, or if the grinding wheel 121 does not cover the wafer to be processed 2 in the thickness direction, the cutting contact geometry will change, resulting in oblique cutting, asymmetrical removal of the end face, and projection errors of the fillet segment. Ultimately, this manifests as tilting of the calibration port sidewall, drift of the fillet radius, and discontinuity in the connection between the endpoint and the edge.

[0135] To address the aforementioned sources of geometric error, the wafer dicing equipment 1 further includes a turntable structure 14, which is mounted on a base 11. A stage 13 is mounted on the turntable structure 14. The turntable structure 14 can rotate relative to the dicing spindle 12 to adjust the relative position and orientation of the wafer 2 to be processed and the grinding wheel 121. This structure enables the wafer 2 to obtain controllable angular degrees of freedom, allowing for the rapid establishment of the target relative orientation before processing and reducing orientation errors caused by clamping angle deviations. Secondly, the wafer dicing equipment 1 also includes an observation axis 15 that can move along the second direction of the base 11, with an image device 151 at one end. Before determining the center coordinates of the wafer 2 to be processed based on the edge coordinates, the wafer 2 to be processed is rotated by the turntable structure 14, and at least three edge coordinates of the wafer 2 to be processed are determined by the image device 151. Since at least three edge coordinates satisfy the geometric minimum condition for the solvability of the center coordinates, and the edge coordinates obtained by rotation are distributed in different angular orientations, the influence of single local edge defects, image noise, and observation angle deviation on the center coordinates can be significantly reduced, thereby transforming the center coordinates from the clamping estimation reference to the measured fitting reference. On this basis, the processing curve path is determined according to the center coordinates and shape parameters, so that the definition of the processing curve path is based on the true geometric center of the wafer 2 to be processed. This can eliminate the overall trajectory offset caused by eccentric clamping from the source and ensure that both ends of the processing curve path are located at the edge of the wafer 2 to be processed. This constraint can be stably established in actual processing. Furthermore, by controlling the movement of the cutting spindle 12 until the grinding wheel 121 covers the wafer 2 in the thickness direction of the wafer 2 to be processed, and the axis of the wafer 2 to be processed is perpendicular to the axis of the grinding wheel 121, the key attitude constraint is solidified as a precondition for processing. This ensures that when the cutting spindle 12 is moved according to the processing curve path to process the calibration hole at the edge of the wafer 2 to be processed, the cutting contact geometry between the grinding wheel 121 and the wafer 2 to be processed remains consistent, thereby reducing the deviation of the notch angle parameter, notch depth parameter, and fillet parameter landing caused by attitude changes. In summary, this solution first measures and establishes the true center coordinates, then generates the processing curve path from the center coordinates and shape parameters, and then performs trajectory processing under attitude constraints. This concentrates the influence of the main geometric errors in the measurement and alignment stages and suppresses them through multi-point fitting and attitude adjustment, ultimately improving the positional accuracy of the calibration hole, shape consistency, and batch processing stability.

[0136] In some embodiments, optionally, such as Figure 8As shown, the wafer 2 to be processed includes a first surface 21 facing the stage 13 and a second surface 22 away from the stage 13. The plane of the first surface 21 and the plane of the second surface 22 together define the thickness range of the wafer 2 to be processed. By adjusting the relative position of the cutting spindle 12 in the second direction, the axis of the grinding wheel 121 falls into the thickness range, thereby achieving effective coverage of the grinding wheel 121 relative to the wafer 2 to be processed in the thickness direction.

[0137] Among them, grinding wheel 121 can follow Figure 8 Rotate in the direction of the middle arrow to achieve notch processing on the wafer 2 to be processed.

[0138] By defining the axis of the grinding wheel 121 as being located between the plane of the first surface 21 and the plane of the second surface 22, the coverage relationship is clearly defined as a geometric state that can be determined in the equipment coordinate system. This avoids the uncertainty introduced by judging coverage solely by whether the grinding wheel 121 contacts the wafer edge, thereby improving the repeatability and traceability of the alignment process.

[0139] When the axis of the grinding wheel 121 deviates from the area between the plane containing the first surface 21 and the plane containing the second surface 22, the effective cutting area between the grinding wheel 121 and the wafer edge will be biased towards the first surface side or the second surface side. This can easily lead to asymmetrical removal of the calibration aperture in the thickness direction, manifested as sidewall tilting, differences in edge chipping between the upper and lower edges, and inconsistencies in the transition section corresponding to the fillet parameters at the upper and lower surfaces. Constraining the axis of the grinding wheel 121 between the two planes allows the cutting action to be closer to the symmetrical state of the thickness center, thereby improving the consistency of the calibration aperture sidewall and the consistency of fillet forming.

[0140] The machining curve path corresponding to the shape parameters is usually defined in a two-dimensional plane and executed by interpolation in the first and second directions. If the coverage state in the thickness direction is unstable, the same machining curve path may exhibit different actual notch depths, opening angles, and fillet radii in different batches due to changes in the cutting cross section. By constraining the position of this axis, the coupling effect of thickness direction factors on the two-dimensional profile can be significantly reduced, making the actual calibrated profile corresponding to the notch depth parameters, notch angle parameters, and fillet parameters more stable and consistent.

[0141] During long-term processing, the wear of the grinding wheel 121 and slight changes in the loading height of the wafer 2 to be processed will alter the relative thickness positional relationship between the grinding wheel 121 and the wafer. Defining the target state as the axis of the grinding wheel 121 being located between the plane containing the first surface 21 and the plane containing the second surface 22 is equivalent to setting a thickness-direction safety window for alignment. This makes the system less prone to entering an unfavorable state of only cutting the upper or lower edge due to slight height drift, thereby improving the stability of batch processing.

[0142] In some embodiments, optionally, such as Figure 1 , Figure 2 and Figure 4 As shown, the loading platform 16 is fixedly connected to the base 11. The loading platform 16 has a defined assembly reference relative to the stage 13 and the cutting spindle 12, allowing the position of the material box 161 in the equipment coordinate system to be calibrated and reproduced. The material box 161 is installed in the bearing area of ​​the loading platform 16 and is used to batch accommodate and orderly store multiple wafers 2 to be processed. Since the position of the material box 161 relative to the base 11 is fixed, the starting position and path planning of the robotic arm 17 for picking and placing have a repeatable geometric reference.

[0143] The robotic arm 17 is fixedly mounted to the base 11. The range of motion of the robotic arm 17 covers the space between the material box 161 and the stage 13, thereby enabling the accessibility of moving the wafer 2 to be processed from the material box 161 to the stage 13. The robotic arm 17, the stage 13, and the material box 161 form a connection link for wafer picking, handling, and placement. The robotic arm 17 picks up the wafer 2 to be processed at the material box 161 and releases the wafer 2 to be processed at the stage 13, so that the wafer 2 to be processed enters the processing position of the stage 13 to fix the wafer 2 to be processed.

[0144] In this embodiment, before obtaining the shape parameters of the calibration port that match the wafer 2 to be processed, the method may further include: placing the material box 161 on the loading platform 16; and controlling the robotic arm 17 to move the wafer 2 to be processed from the material box 161 to the stage 13.

[0145] After completion, the wafer 2 to be processed enters the fixed position of the stage 13, and then the step of obtaining the shape parameters of the calibration port that match the wafer 2 to be processed is performed.

[0146] The cassette 161 is used to hold multiple wafers 2 to be processed, enabling continuous processing of multiple wafers in a single loading, reducing cycle time fluctuations caused by frequent manual loading. The loading platform 16 is located on the base 11 and the cassette 161 is fixed to the loading platform 16, stabilizing the initial position of the wafers 2 to be processed and reducing the probability of misalignment of the wafers 2 on the stage 13. This reduces the pressure of subsequent center coordinate calculation and processing curve path positioning compensation from the source. The robotic arm 17 performs the action of moving the wafers 2 to be processed from the cassette 161 to the stage 13, avoiding the randomness of wafer posture, edge bumps and contamination risks caused by manual handling, thereby improving the reliability and consistency of edge coordinate acquisition by the subsequent imaging device 151.

[0147] In some embodiments, the cleaning device 18 is optionally fixedly disposed with the base 11, so that the position of the cleaning device 18 in the equipment coordinate system is stable and reproducible, thereby providing a definite spatial reference for the conveying path of the robotic arm 17. After the calibration port is processed, the robotic arm 17 takes the wafer 2 to be processed from the stage 13; sends the wafer 2 to be processed into the cleaning device 18 for cleaning; after cleaning, the robotic arm 17 places the cleaned wafer 2 to be processed into the material box 161.

[0148] The cleaning device 18 is located on the base 11, so that it shares the same assembly reference with the cutting spindle 12, the platform 13, and the loading platform 16. This is beneficial for simplifying the path planning of the robotic arm 17, stabilizing the cycle time, and reducing cross-station handling errors.

[0149] In this embodiment, after controlling the cutting spindle 12 to move according to the processing curve path to process calibration holes on the edge of the wafer 2 to be processed, the method further includes: the robotic arm 17 transporting the wafer 2 to be processed after the calibration holes have been processed to the cleaning device 18; cleaning the wafer 2 to be processed in the cleaning device 18; and the robotic arm 17 placing the cleaned wafer 2 to be processed into the material box 161.

[0150] Immediately after the calibration port is processed, it is cleaned in the cleaning device 18. This reduces the amount of cutting residue adhering to the edge of the wafer 2 to be processed and the first surface 21 or the second surface 22, thereby reducing the risk of misjudgment during subsequent inspection or verification and reducing the probability of particles being carried into the next process.

[0151] Cleaning can remove attached debris and cutting fluid residue, reducing the probability of micro-chipping caused by secondary scraping of the calibration port fillet area by debris, thereby improving the edge consistency maintenance capability corresponding to the fillet parameters.

[0152] The cleaning device 18 is located on the base 11 and the robotic arm 17 completes the transfer and return of the wafers, so that the processed wafers 2 return to the material box 161 along a consistent path and with controllable posture, which is beneficial to the traceability and cycle stability of batch processing.

[0153] After processing, no manual handling or cleaning is required, reducing edge bumps, randomness of posture, and secondary contamination caused by human contact.

[0154] like Figure 12 As shown, another embodiment of this application provides an electronic device 100, including a first processor 1110, a memory 1109, and a program or instructions stored in the memory 1109 and executable on the first processor 1110. When the program or instructions are executed by the first processor 1110, they implement the various processes of the above-described wafer calibration port processing method and achieve the same technical effect. To avoid repetition, they will not be described again here.

[0155] This application also provides a readable storage medium storing a program or instructions. When the program or instructions are executed by a processor, they implement the various processes of the above-described wafer calibration port processing method and achieve the same technical effect. To avoid repetition, they will not be described again here.

[0156] like Figure 13 As shown, this application embodiment also provides a chip 200, which includes a second processor 2110 and a communication interface 2109. The communication interface 2109 is coupled to the second processor 2110. The second processor 2110 is used to run programs or instructions to implement the various processes of the above-described wafer calibration port processing method embodiment, and can achieve the same technical effect. To avoid repetition, it will not be described again here.

[0157] It should be understood that the chip mentioned in the embodiments of this application may also be referred to as a system-on-a-chip, system chip, chip system, or system-on-a-chip, etc.

[0158] Another embodiment of this application provides a wafer dicing apparatus 1, including: a base 11 and a dicing spindle 12 and a stage 13 disposed on the base 11. One end of the dicing spindle 12 is provided with a grinding wheel 121. The stage 13 is used to fix the wafer 2 to be processed. The stage 13 can move along a first direction of the base 11, and the dicing spindle 12 can move along a second direction of the base 11. The wafer dicing apparatus 1 realizes the wafer calibration port processing method described above.

[0159] Using the base 11 as a unified installation and geometric reference, a stable machining motion chain is formed by the cutting spindle 12 and the stage 13. The grinding wheel 121 forms a controllable cutting execution end, and the stage 13 ensures workpiece constraint and machining stability. At the same time, the movement of the stage 13 along the first direction and the movement of the cutting spindle 12 along the second direction form an orthogonal or equivalently orthogonal two-dimensional relative motion capability, so that the grinding wheel 121 can complete the notch forming of the wafer 2 to be machined according to the predetermined trajectory.

[0160] Furthermore, the equipment not only has the capability to cut hardware, but also achieves control at the level by determining the drive trajectory from shape parameters, generating the processing curve path, and executing the processing curve path; through the coordinated movement of the first and second directions, the geometric target of the calibration port is placed on the actual relative movement of the grinding wheel 121 and the wafer; ultimately achieving consistency in calibration port position, contour consistency, and batch repeatability, while reducing the reliance on experience-based adjustments.

[0161] Specifically, the base 11 serves as the load-bearing foundation and geometric reference for the entire machine, responsible for the installation and positioning of the cutting spindle 12 and the stage 13, as well as maintaining their relative positional relationship. The linear motion in the first and second directions, the trajectory of the grinding wheel 121, and the positioning of the stage 13 all use the base 11 as a reference, reducing splicing errors across references. The cutting process involves cutting forces and vibrations; the rigidity of the base 11 directly affects the relative pose stability of the grinding wheel 121 and the wafer, thus influencing notch edge chipping, contour burrs, and trajectory following errors.

[0162] Both the cutting spindle 12 and the stage 13 are mounted on the same base 11, sharing the assembly datum and control coordinate system. The relative positional error between the cutting spindle 12 and the stage 13 mainly originates from the same assembly system, facilitating one-time calibration and unified compensation; compared to separate platforms, this significantly reduces the error superposition caused by multi-platform assembly. The calculation of the machining curve path is usually completed within the equipment coordinate system, and the shared datum relationship ensures higher consistency between the calculated coordinates and the actual motion coordinates, thereby improving the consistency of the calibration port endpoint positioning and depth.

[0163] The grinding wheel 121, as a direct cutting actuator, is mounted at one end of the cutting spindle 12, enabling the rotational / positioning capabilities of the cutting spindle 12 to be transferred to the grinding wheel 121 for effective cutting. With stable rotational accuracy and linear speed, the controlled rotation of the grinding wheel 121 at the end of the cutting spindle 12 results in a more stable rotational state, which is beneficial for controlling cutting texture and edge defects. The end-positioning facilitates notching close to the wafer edge, reducing the risk of spatial interference between the cutting spindle 12's axis and the wafer / stage 13. The actual cutting point of the grinding wheel 121 is determined by the end geometry of the cutting spindle 12; the end connection further facilitates maintaining consistency between the tool center and the trajectory planning, thereby better mapping the notch depth and fillet transition.

[0164] The stage 13 provides positional and orientation constraints for the wafer 2 to be processed, limiting the micro-motions induced by translation, rotation, and warping of the wafer during processing. The cutting force of the grinding wheel 121 generates tangential / normal components. If the stage is not sufficiently fixed, it can cause micro-slippage of the wafer, resulting in deviations in notch angle, endpoint position, and depth. Fixing the stage 13 can reduce this risk. Stable fixation helps reduce the amplification of local vibrations and lowers the probability of edge chipping and micro-crack propagation at the notch root.

[0165] The stage 13 moves along the base 11 in a first direction, providing linear positioning or feed freedom on the workpiece side, enabling the wafer 2 to be processed to move in a controlled manner in the first direction. The positioning accuracy and repeatability in the first direction directly affect the projection error in the notch depth direction, i.e., the geometric position deviation of the notch inward cutting; it also affects the accuracy of the endpoint of the processing curve path at the edge of the wafer, i.e., the endpoint positioning deviation, which may cause the risk of incomplete penetration defects.

[0166] The cutting spindle 12 moves along the base 11 in a second direction, providing linear positioning or feed freedom for the tool side, enabling the grinding wheel 121 to move in a controlled manner relative to the wafer 2 to be machined in the second direction. The second direction, together with the first direction, determines the actual execution capability of the two-dimensional trajectory. If there is a deviation in the positioning of the second direction, it will directly manifest as a deviation in the notch angle or a deviation in the curvature of the fillet transition section; if there is a lag in the movement of the second direction, it will manifest as contour contraction, outward expansion, or discontinuity in the fillet section. The combination of the second direction and the grinding wheel 121 makes the entry or exit of the grinding wheel 121 relative to the wafer edge more controllable, thereby affecting the notch edge quality and the probability of edge chipping.

[0167] The first and second directions together form the basis of the equipment's planar motion coordinates, giving the equipment an equivalent two-dimensional interpolation capability. This allows the equipment to stably process complex contours such as notch depth, notch angle, and fillet transitions. The more stable the geometric orthogonality or equivalent mapping relationship between the two directions, the better the repeatability of the trajectory and the higher the batch consistency.

[0168] By using the base 11 as a unified geometric reference, and utilizing the cutting spindle 12, stage 13, and grinding wheel 121 provided on the base 11, the wafer cutting equipment 1 has stable relative motion and trajectory execution capabilities, thereby enabling the wafer calibration port processing method described above to stably process the processing curve path corresponding to the shape parameters to the edge of the wafer 2 to be processed, improving the consistency of calibration port forming and the stability of batch processing.

[0169] Since the wafer dicing equipment 1 performs the steps of the wafer calibration port processing method, it has the beneficial effects of any of the above-mentioned wafer calibration port processing methods, which will not be elaborated here.

[0170] In some embodiments, optionally, in addition to cutting, the equipment has the ability to perform image observation of the edge of the wafer 2 to be processed and establish processing positioning basis, so that the determination and placement of the processing curve path can be measured, reproduced, and corrected. After the image device 151 acquires the edge information, the processing reference standard is changed from the clamping position of the stage 13 to the actual edge position of the wafer 2 to be processed. The trajectory execution in the first direction and the second direction is more likely to correspond to the geometry of the actual workpiece, and the batch fluctuations in endpoint placement, depth, angle, and fillet radius are smaller. The observation axis 15 and the cutting spindle 12 share the motion reference in the second direction, and the positioning error of measurement and processing in the same direction is more easily consistent and controllable, reducing the deviation caused by the inconsistency between the measurement reference and the processing reference.

[0171] In some embodiments, optionally, such as Figure 5 , Figure 6 and Figure 7As shown, during the cutting process, water is sprayed onto the grinding wheel 121 through the water spray hood 19 to cool it down, so that the temperature rise in the contact area between the grinding wheel 121 and the wafer 2 to be processed is controlled, and the accumulation of heat in the grinding wheel 121 and the wafer 2 to be processed is reduced.

[0172] The water spray shroud 19 sprays water onto the grinding wheel 121 for cooling, which helps to suppress overheating, chip adhesion, and premature failure of the grinding wheel 121. This keeps the sharpness, effective diameter, and roundness of the grinding wheel 121 more stable, thereby making the actual machining profile corresponding to the notch depth parameters, notch angle parameters, and fillet parameters more stable. Controlled temperature and sufficient cooling can reduce the risk of localized wafer burns, microcrack propagation, and edge chipping. It also reduces the impact of thermal deformation on the positioning of the machining curve path and the formation of shape parameters, ultimately further improving the accuracy of the calibration port position, shape consistency, and batch processing stability.

[0173] It should be added that the water spray shroud 19, as an independent component, is used to collect, guide, and control the cooling water flow, so that the cooling medium is distributed in a controlled manner in space, rather than being poured randomly. This solution can create a locally confined space around the circumference of the grinding wheel 121, so that the water flow is concentrated on the surface of the grinding wheel 121 and the contact area between the grinding wheel 121 and the wafer 2 to be processed.

[0174] Compared to simple external nozzles, the water spray shroud 19, through structural restraint, allows the water flow to form a covered or semi-covered cooling zone around the grinding wheel 121. The water flow acts more on the working surface of the grinding wheel 121 rather than flowing into non-critical areas, thereby improving the cooling efficiency per unit flow rate.

[0175] Since the direction and range of the water spray are limited by the water spray cover 19, the splashing and atomization of coolant in the space can be reduced, which helps to reduce the pollution and interference to the observation axis 15, the image device 151 and electrical components, and improve the clarity of image acquisition and the long-term stability of the equipment.

[0176] The water jet from the water spray nozzle 19 cools the grinding wheel 121 while also scouring the cutting area between the grinding wheel 121 and the wafer 2 to be processed, carrying away some chips and small fragments, thus reducing the risk of clogging on the surface of the grinding wheel 121 and secondary scratching on the workpiece surface.

[0177] The water spray shroud 19 is directly mounted on the end region of the cutting spindle 12, forming a tightly fitted end assembly with the grinding wheel 121. Since the grinding wheel 121 is also located at one end of the cutting spindle 12, the location of the water spray shroud 19 at one end of the cutting spindle 12 means that the distance between the water spray shroud 19 and the grinding wheel 121 is small. Through structural design, the water spray nozzle can be aligned with the working surface of the grinding wheel 121 or its circumferential area.

[0178] Water sprayed from the water spray cover 19 acts on the grinding wheel 121 almost immediately. During the cooling process, the heat transfer path is short and the heat dissipation efficiency is high, which can effectively suppress the rapid rise in the working surface temperature of the grinding wheel 121. Since the water spray cover 19 is installed on the base 11 together with the cutting spindle 12 and is located at one end of the cutting spindle 12, when the cutting spindle 12 moves along the second direction of the base 11, the water spray cover 19 and the grinding wheel 121 move synchronously, so that the cooling always follows the actual machining position of the grinding wheel 121, and the cooling point and the cutting point are spatially coincident or nearly coincident.

[0179] If the water spray mechanism is detached from the end of the cutting spindle 12, a cooling blind zone will be formed under certain cutting / removing postures; while the water spray cover 19 is located at one end of the cutting spindle 12, and can always be in the area close to the grinding wheel 121 as the posture of the grinding wheel 121 changes, reducing the cooling dead zone and enabling the grinding wheel 121 to be cooled relatively evenly throughout the entire machining path.

[0180] The water spray hood 19 is used to spray water onto the grinding wheel 121 to cool it down. The main target of the cooling medium is the grinding wheel 121, rather than just the wafer 2 to be processed or the environment, thus enhancing the temperature control of the working surface of the grinding wheel 121.

[0181] By continuously or as needed, water is sprayed onto the grinding wheel 121 to cool it down, so that the grinding wheel 121 can be kept in a suitable temperature range during long-term processing, thereby reducing problems such as softening of abrasive binder and aggravated abrasive grain shedding.

[0182] Overheating of the grinding wheel 121 can cause the cutting of the wafer 2 to become dry or semi-dry grinding. When the local temperature is too high, thermal cracks and edge chipping are likely to occur at the wafer edge. The water spray shroud 19 is used to spray water onto the grinding wheel 121 to cool it down, thereby controlling the temperature rise in the contact area between the grinding wheel 121 and the wafer 2, reducing the initiation and propagation of microcracks caused by instantaneous high temperature, and improving the integrity and reliability of the notch edge.

[0183] Thermal expansion caused by temperature changes the actual effective diameter and contact width of the grinding wheel 121, which in turn affects the actual profile corresponding to the notch depth, notch angle, and fillet parameters. By spraying water onto the grinding wheel 121 to cool it down, the temperature change of the grinding wheel 121 is controlled, the geometry and grinding performance of the grinding wheel 121 are more stable, and the actual amount of material removed during the execution of the machining curve path is more consistent, reducing batch-to-batch differences.

[0184] At high temperatures, chips tend to adhere to the working surface of the grinding wheel 121, causing it to become clogged. This increases the cutting force and further exacerbates the heat generation, creating a vicious cycle. While the water spray hood 19 sprays water onto the grinding wheel 121 to cool it down, it also washes away the chips on the surface of the grinding wheel 121, which helps maintain the self-sharpening properties of the grinding wheel 121 surface and reduces profile distortion and vibration caused by uneven wear.

[0185] It is understandable that reducing the temperature of the grinding wheel 121 indirectly reduces the heat it transfers to surrounding components, such as the bearings, seals, and adjacent sensors of the cutting spindle 12, which helps extend the service life of the cutting spindle 12 and related components and improves the system's long-term accuracy maintenance capability. At the same time, the water flow carries away some dust and debris, which also helps reduce dust contamination on the optical path of the observation axis 15 and the imaging device 151, ensuring clearer edge image acquisition.

[0186] In summary, by arranging the water spray shroud 19 on the same side as the end of the cutting spindle 12, the water spray shroud 19 moves synchronously with the grinding wheel 121 as the cutting spindle 12 moves along the second direction of the base 11, thereby forming a follow-up cooling in the cutting contact area between the grinding wheel 121 and the wafer 2 to be processed. This not only suppresses the temperature rise of the grinding wheel 121 and the cutting area, reducing the risk of hot cracking, edge chipping and burning, maintaining the geometry and cutting performance of the grinding wheel 121, and improving the consistency of the contour forming corresponding to the notch depth parameter, notch angle parameter and fillet parameter, but also, in conjunction with the measurement reference of the observation axis 15 and the image device 151, further improves the stability and batch repeatability of wafer calibration port processing.

[0187] This application also provides a specific embodiment in which a microscope is used to position a fixed pattern on the wafer. A microscope (i.e., an imaging device) is mounted on the Y1 axis (i.e., the observation axis), and a grinding wheel is mounted on the Y2 axis (i.e., the cutting spindle) for cutting. A platform is mounted on the X-axis to transport materials from the handling area to the cutting area. A rotating motion structure (i.e., a turntable structure) on the platform is used to adsorb and fix the wafer.

[0188] The material handling area is divided into a handling arm (i.e., a robotic arm), a cleaning device, and a loading platform. During loading, the handling arm retrieves the workpiece (i.e., the wafer to be processed) from the loading tray on the loading platform and places it on the carrier table. After processing, the robotic arm transports the workpiece to the cleaning device for cleaning, and then the handling arm returns it to the workpiece to complete processing. Wafers are placed in the loading area via a transfer tray, then transported to the worktable by the handling arm, and finally conveyed to the cutting area, where they are cut by the cutting spindle. A control algorithm performs interpolation motion along the X and Y axes (including Y1 and Y2 axes) to process the required notch shape with an accuracy within 10 micrometers. A water spray shroud cools the blades, enabling the cutting of relatively thick silicon wafers. Cutting is performed by an air-bearing spindle driving the blade rotation to cut the wafer. Water or cutting fluid is sprayed from the water spray shroud to remove dirt and cool the blades. The movement of the cutting spindle in the X and Y directions achieves the cutting of notch notches on the sides of the wafer.

[0189] Processing procedure:

[0190] Input the Notch shape using workpiece parameters, and determine the machining curve path using notch depth, angle, and fillet radius data.

[0191] Loading: After the wafer cassette is placed on the loading platform, the machine automatically opens the cassette front cover and places the wafer onto the corner structure using a transport arm. Wafer Center Positioning: The machine travels to the edge of the wafer using an optical camera on the observation axis. Image processing identifies the coordinates of the wafer edge, and the corner structure rotates the wafer, selecting at least three measurement points to calculate the center. Notching: After the cutting spindle descends to the same horizontal position as the grinding wheel center, the X-axis moves the wafer closer to the grinding wheel and cuts it at the planned position. Unloading: The robotic arm sends the finished workpiece to a cleaning device for cleaning. After cleaning, the robotic arm returns the workpiece to the cassette to complete the processing.

[0192] This device enables the shaping and cutting of wafer notches. It allows for more precise cutting, and the use of abrasive wheels improves efficiency and reduces dust contamination of the wafer. During prolonged cutting, abrasive wheels wear down. Using fixed-shape wheels compromises accuracy, necessitating frequent tool changes and sharpening. Furthermore, processing irregularly shaped wheels is both difficult and costly. This device, however, only requires pre-cut alignment and contact height measurement to determine blade wear before high-precision cutting can be achieved.

[0193] In this invention, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance; the term "multiple" refers to two or more unless otherwise explicitly defined. The terms "install," "connect," "link," and "fix" should be interpreted broadly. For example, "connect" can be a fixed connection, a detachable connection, or an integral connection; "link" can be a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0194] In the description of this invention, it should be understood that the terms "upper," "lower," "left," "right," "front," "rear," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or unit referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0195] In the description of this specification, the terms "one embodiment," "some embodiments," "specific embodiment," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0196] The above are merely optional embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A method for processing wafer calibration ports, characterized in that, A wafer dicing apparatus includes a base, a dicing spindle, and a stage mounted on the base. One end of the dicing spindle is equipped with a grinding wheel. The stage is used to fix a wafer to be processed. The wafer to be processed includes a first surface facing the stage and a second surface away from the stage. The stage is movable along a first direction of the base, and the dicing spindle is movable along a second direction of the base. The wafer calibration port processing method includes: Obtain the shape parameters of the calibration port that match the wafer to be processed, including notch depth parameters, notch angle parameters, and fillet parameters; Controlling the cutting spindle to move until the grinding wheel covers the wafer in the thickness direction of the wafer to be processed, and the axis of the wafer to be processed is perpendicular to the axis of the grinding wheel; wherein, controlling the cutting spindle to move until the grinding wheel covers the wafer in the thickness direction of the wafer to be processed specifically includes: controlling the cutting spindle to move until the axis of the grinding wheel is located between the plane containing the first surface and the plane containing the second surface in the thickness direction of the wafer to be processed; The machining curve path of the grinding wheel is determined according to the shape parameters, and both ends of the machining curve path are located at the edge of the wafer to be processed; wherein, determining the machining curve path of the grinding wheel according to the shape parameters includes: determining the maximum indentation depth position of the machining curve path according to the notch depth parameter; determining the direction of the two side boundaries of the machining curve path according to the notch angle parameter; determining the curvature of the transition segment of the machining curve path according to the fillet parameter; and constraining the start and end points of the machining curve path to the edge of the wafer to be processed; Control the cutting spindle and / or the stage to move according to the processing curve path to process the calibration port on the edge of the wafer to be processed.

2. The wafer calibration port processing method according to claim 1, characterized in that, The wafer dicing equipment also includes a turntable structure, which is disposed on the base, and the stage is disposed on the turntable structure. The turntable structure can rotate relative to the dicing spindle to adjust the relative position and relative orientation of the wafer to be processed and the grinding wheel.

3. The wafer calibration port processing method according to claim 2, characterized in that, The wafer dicing equipment also includes an observation axis that can move along a second direction of the base, and one end of the observation axis is provided with an image device; Determining the machining curve path of the grinding wheel based on the shape parameters includes: Control the observation axis to move to the edge position of the wafer to be processed; The center coordinates of the wafer to be processed are determined based on the edge position; The machining curve path is determined based on the center coordinates and the shape parameters.

4. The wafer calibration port processing method according to claim 3, characterized in that, Before determining the center coordinates of the wafer to be processed based on the edge position, the wafer calibration port processing method further includes: The turntable structure controls the rotation of the wafer to be processed, and the imaging device determines at least three edge coordinates of the wafer to be processed.

5. The wafer calibration port processing method according to claim 1, characterized in that, Also includes: A loading platform is provided on the base, and the loading platform is equipped with a material box, which is used to accommodate multiple wafers to be processed. A robotic arm is provided on the base, and the robotic arm is used to move the wafer to be processed from the hopper to the stage.

6. The wafer calibration port processing method according to claim 5, characterized in that, Also includes: A cleaning device is provided on the base. The robotic arm is used to clean the wafer to be processed in the cleaning device after completing the processing of the calibration port, and to place the cleaned device in the material box.

7. An electronic device, characterized in that, It includes a first processor, a memory, and a program or instructions stored in the memory and executable on the first processor, wherein the program or instructions, when executed by the first processor, implement the steps of the wafer calibration port processing method as described in any one of claims 1 to 6.

8. A readable storage medium, characterized in that, The readable storage medium stores a program or instructions that, when executed by a processor, implement the steps of the wafer calibration port processing method as described in any one of claims 1 to 6.

9. A chip, characterized in that, The chip includes a second processor and a communication interface, the communication interface being coupled to the second processor, the second processor being used to run programs or instructions to implement the steps of the wafer calibration port processing method as described in any one of claims 1 to 6.

10. A wafer dicing device, characterized in that, include: The base includes a cutting spindle and a stage mounted on the base. One end of the cutting spindle is equipped with a grinding wheel. The stage is used to fix the wafer to be processed. The stage can move along a first direction of the base, and the cutting spindle can move along a second direction of the base. The wafer calibration port processing method as described in any one of claims 1 to 6 is implemented by the wafer dicing equipment.

11. The wafer dicing equipment according to claim 10, characterized in that, Also includes: An observation axis is movably mounted on the base, the observation axis extends along the height direction of the base, and an image device is provided at one end of the observation axis; The observation axis can be moved along the second direction of the base.

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