Chip-level Gaussian ASE light source structure

Abstract

The invention provides a chip-level Gaussian ASE light source structure, which is characterized in that a 980nm laser 1 is connected with a spot size converter I2, the spot size converter I2 is connected with a uniform beam splitter I3, the uniform beam splitter I3 is connected with a wavelength division multiplexer I4 and a wavelength division multiplexer II10, the wavelength division multiplexer I4 is connected with an erbium-doped silicon nitride waveguide delay line I5 and a uniform beam splitter II8, and the erbium-doped silicon nitride waveguide delay line I5 is connected with the uniform beam splitter II8. The uniform beam splitter II8 is connected with the Sagnac ring reflector 9, the erbium-doped silicon nitride waveguide delay line I5 is connected with the on-chip isolator I6, the on-chip isolator I6 is connected with the erbium-doped silicon nitride waveguide delay line II7, the erbium-doped silicon nitride waveguide delay line II7 is connected with the wavelength division multiplexer II10, the wavelength division multiplexer II10 is connected with the on-chip isolator II11, and the on-chip isolator II11 is connected with the on-chip isolator II11. The on-chip isolator II 11 is connected with the non-uniform beam splitter 12, the non-uniform beam splitter 12 is respectively connected with the output waveguide 13 and the spot-size converter II 14, the spot-size converter II 14 is connected with the detector 15, and the detector 15 is connected with the detector current output module 17.

Description

A chip-level Gaussian ASE light source structure Technical Field

[0001] This invention belongs to the field of integrated optical technology, specifically relating to a chip-level Gaussian type spontaneous emission (ASE) light source structure. Background Technology

[0002] Fiber optic gyroscope-based inertial sensors are key components of navigation and guidance systems in aviation, maritime, and land applications, and are widely used in the military field. Their accuracy and reliability directly affect the combat effectiveness of weapon platforms. Currently, most low- and medium-precision fiber optic gyroscopes use superluminescent diodes (SLDs) with broadband light sources, which have advantages such as small size and low cost. However, SLDs have poor temperature-dependent performance, and wavelength drift throughout the temperature range will lead to degradation of the gyroscope's scaling factor and zero-bias performance. For high-precision navigation applications such as strategic missiles and submarines, erbium-doped fiber optic ASE (associated optical path) light sources are used, which have advantages such as high power and good wavelength stability. Traditional ASE light sources use discrete fiber optic devices fused together to form the optical path system, resulting in large light source volume and high cost, which cannot meet the future development requirements of lightweight and low-cost weaponry. The key direction for the development of ASE light sources is to achieve miniaturization and integration of discrete devices using photonic chip technology and to achieve large-scale mass production using complementary metal oxide (CMOS) compatible processes.

[0003] In China, only patent CN 119764984 A proposes a chip-based ASE light source. However, its reflector uses a Faraday reflector, which is a free-space optical element, and its isolator does not provide a specific on-chip implementation scheme. Therefore, this technical solution is difficult to achieve complete on-chip integration. In addition, it does not provide a specific method for implementing a Gaussian output spectrum, which is difficult to meet the application requirements of optical gyroscopes. Summary of the Invention

[0004] This invention provides a chip-level Gaussian ASE light source structure, which can solve the problem of low measurement accuracy and stability caused by insufficient light source performance in existing optical gyroscopes.

[0005] The technical solution of this invention: A chip-level Gaussian ASE light source structure, comprising a 980 nm laser (1), a mode converter I2, a uniform beam splitter I3, a wavelength division multiplexer I4, an erbium-doped silicon nitride waveguide delay line I5, an on-chip isolator I6, an erbium-doped silicon nitride waveguide delay line II7, a uniform beam splitter II8, a Sagnac ring mirror 9, a wavelength division multiplexer II10, an on-chip isolator II11, a non-uniform beam splitter 12, an output waveguide 13, a mode converter II14, a detector 15, a laser current control module 16, and a detector current output module 17, wherein: 980 nm A nm laser 1 is connected to a mode converter I2. Mode converter I2 is connected to a uniform beam splitter I3. Uniform beam splitter I3 is connected to wavelength division multiplexers I4 and II10, respectively. Wavelength division multiplexer I4 is connected to an erbium-doped silicon nitride waveguide delay line I5 and a uniform beam splitter II8, respectively. Uniform beam splitter II8 is connected to a Sagnac ring mirror 9. Erbium-doped silicon nitride waveguide delay line I5 is connected to an on-chip isolator I6. On-chip isolator I6 is connected to an erbium-doped silicon nitride waveguide delay line I5. The delay line II7 is connected to the erbium-doped silicon nitride waveguide delay line II7 and the wavelength division multiplexer II10. The wavelength division multiplexer II10 is connected to the on-chip isolator II11. The on-chip isolator II11 is connected to the non-uniform beam splitter 12. The non-uniform beam splitter 12 is connected to the output waveguide 13 and the mode converter II14 respectively. The mode converter II14 is connected to the detector 15. The detector 15 is connected to the detector current output module 17. The laser current control module 16 is connected to the 980 nm laser 1.

[0006] Specifically, the 980 nm laser 1 emits pump light, which is coupled into the silicon nitride waveguide through the mode converter I2. The beam is then split into two beams proportionally by the uniform beam splitter I3. The lower beam enters the erbium-doped silicon nitride waveguide delay line I5 through the wavelength division multiplexer I4, while the upper beam enters the erbium-doped silicon nitride waveguide delay line II7 through the wavelength division multiplexer II10.

[0007] Specifically, under the excitation of 980 nm pump light, erbium-doped silicon nitride waveguide delay line I5 and erbium-doped silicon nitride waveguide delay line II7 generate forward and backward ASE, respectively; erbium-doped silicon nitride waveguide delay line II7 absorbs the ASE emitted by erbium-doped silicon nitride waveguide delay line I5, while its re-radiated superfluorescence is concentrated in the long wavelength range.

[0008] Specifically, on-chip isolator I6 isolates erbium-doped silicon nitride waveguide delay line I5 and erbium-doped silicon nitride waveguide delay line II7.

[0009] Specifically, the backward ASE emitted by the erbium-doped silicon nitride waveguide delay line I5 passes sequentially through wavelength division multiplexer I4 and uniform beam splitter II8, and is then reflected by Sagnac ring mirror 9 to be converted into forward ASE.

[0010] Specifically, the forward ASE generated by erbium-doped silicon nitride waveguide delay line I5 and erbium-doped silicon nitride waveguide delay line II7 enters the on-chip isolator II11 via wavelength division multiplexer II10.

[0011] Specifically, the ASE emitted by the on-chip isolator II 11 is split into two beams by the non-uniform beam splitter 12 with a splitting ratio of 99:1. The ASE with 99% power is finally output through the output waveguide 13, while the ASE with 1% power enters the detector 15 for monitoring optical power.

[0012] Specifically, the photocurrent in detector 15 enters the detector current output module to record the output power of the ASE light source in real time; when the output power of the ASE light source is lower or higher than the standard output power, the laser current control module increases or decreases the laser current to stabilize the output optical power.

[0013] Specifically, both the pattern converter I (2) and the pattern converter II 14 are inverted cone structures.

[0014] Specifically, the Sagnac ring mirror 9 consists of a semi-circular waveguide and two symmetrical S-bend waveguides.

[0015] In summary, this invention provides a chip-level Gaussian ASE light source structure, integrating various passive devices on a silicon nitride platform to construct a two-way bipolar Gaussian ASE light source. By constructing an erbium-doped silicon nitride waveguide delay line, an on-chip isolator, a wavelength division multiplexer, a uniform and non-uniform beam splitter, and a Sagnac ring mirror on the silicon nitride platform, and by integrating a 980nm pump laser and a detector, the ASE light source is realized on a single chip. Compared to fiber optic ASE light sources, this chip-level ASE light source eliminates fiber splices and avoids fiber coiling, improving the stability of the light source. Furthermore, the two-way design based on the Sagnac ring increases the output power of the light source, and the bipolar design based on the two-segment erbium-doped silicon nitride waveguide achieves Gaussian spectral output. Attached Figure Description

[0016] Figure 1 is a schematic diagram of a chip-level Gaussian ASE light source structure disclosed in an embodiment of the present invention; Figure 2 is a schematic diagram of a wavelength division multiplexer disclosed in an embodiment of the present invention; Figure 3 is the output port transmittance of the 980nm / 1560nm wavelength division multiplexer disclosed in an embodiment of the present invention under different coupling region lengths; Figure 4 is a simulation diagram of the electric field of the 980nm / 1560nm wavelength division multiplexer disclosed in an embodiment of the present invention at wavelengths of 1550nm and 980nm; Figure 5 is a schematic diagram of the optical field simulation of the non-uniform beam splitter disclosed in an embodiment of the present invention; Figure 6 is a schematic diagram of the passive waveguide region structure disclosed in an embodiment of the present invention; Figure 7 is a flowchart of the passive waveguide region fabrication process disclosed in an embodiment of the present invention; Figure 8 is a schematic diagram of the erbium-doped silicon nitride waveguide structure disclosed in an embodiment of the present invention; Figure 9 is a flowchart of the erbium-doped silicon nitride waveguide fabrication process disclosed in an embodiment of the present invention; Figure 10 is a schematic diagram of the on-chip isolator structure disclosed in an embodiment of the present invention; Figure 11 is a flowchart of the on-chip isolator fabrication process disclosed in an embodiment of the present invention. Detailed Implementation

[0017] The technical solution of the present invention will now be described in detail with reference to specific embodiments and accompanying drawings.

[0018] Example 1, as shown in Figure 1, provides a chip-level Gaussian ASE light source structure, including a 980 nm laser 1, a mode converter I 2, a uniform beam splitter I 3, a wavelength division multiplexer I 4, an erbium-doped silicon nitride waveguide delay line I 5, an on-chip isolator I 6, an erbium-doped silicon nitride waveguide delay line II 7, a uniform beam splitter II 8, a Sagnac ring mirror 9, a wavelength division multiplexer II 10, an on-chip isolator II 11, a non-uniform beam splitter 12, an output waveguide 13, a mode converter II 14, a detector 15, a laser current control module 16, and a detector current output module 17, wherein: 980 nm... A nm laser 1 is connected to a mode converter I2. Mode converter I2 is connected to a uniform beam splitter I3. Uniform beam splitter I3 is connected to wavelength division multiplexers I4 and II10, respectively. Wavelength division multiplexer I4 is connected to an erbium-doped silicon nitride waveguide delay line I5 and a uniform beam splitter II8, respectively. Uniform beam splitter II8 is connected to a Sagnac ring mirror 9. Erbium-doped silicon nitride waveguide delay line I5 is connected to an on-chip isolator I6. On-chip isolator I6 is connected to an erbium-doped silicon nitride waveguide delay line I5. The delay line II7 is connected to the erbium-doped silicon nitride waveguide delay line II7 and the wavelength division multiplexer II10. The wavelength division multiplexer II10 is connected to the on-chip isolator II11. The on-chip isolator II11 is connected to the non-uniform beam splitter 12. The non-uniform beam splitter 12 is connected to the output waveguide 13 and the mode converter II14 respectively. The mode converter II14 is connected to the detector 15. The detector 15 is connected to the detector current output module 17. The laser current control module 16 is connected to the 980 nm laser 1.

[0019] Specifically, a 980 nm laser 1 emits pump light, which is coupled into a silicon nitride waveguide via a mode converter I2. The beam is then split into two beams proportionally by a beam splitter I3. The lower beam passes through a wavelength division multiplexer I4 and enters an erbium-doped silicon nitride waveguide delay line I5, while the upper beam passes through a wavelength division multiplexer II10 and enters an erbium-doped silicon nitride waveguide delay line II7. Under the excitation of the 980 nm pump light, erbium-doped silicon nitride waveguide delay lines I5 and II7 generate forward and backward ASE (associated photoluminescence), respectively. Erbium-doped silicon nitride waveguide delay line II7 acts as a filter, absorbing the ASE emitted by erbium-doped silicon nitride waveguide delay line I5. Its re-emitted superfluorescence is mainly concentrated in the long wavelength range, suppressing the peak near 1530 nm while extending the peak range near 1560 nm. On-chip isolator I6 isolates erbium-doped silicon nitride (SiN) waveguide delay lines I5 and II7, preventing the forward superfluorescence of II7 from interfering with the spectrum of I5. By changing the erbium ion concentration and length of I5 and II7, the ASE light source spectrum can be controlled to be Gaussian. The backward ASE emitted by I5 passes sequentially through wavelength division multiplexer I4 and beam splitter II8, and is then reflected by Sagnac ring mirror 9, converting it into forward ASE. Sagnac ring mirror 9 increases the output power of the light source. The forward ASE generated by I5 and II7 enters on-chip isolator II11 via wavelength division multiplexer II10. The on-chip isolator II 11 is used to reduce the interference of system backlight reflection on the stability of the ASE light source. The ASE emitted by the on-chip isolator II 11 is split into two beams by a non-uniform beam splitter 12 with a splitting ratio of 99:1. 99% of the ASE power is finally output through the output waveguide 13, while 1% of the ASE power enters the detector 15 for monitoring optical power. The photocurrent in the detector 15 enters the detector current output module for real-time recording of the ASE light source output power. When the ASE light source output power is lower or higher than the standard output power, the laser current control module increases or decreases the laser current to stabilize the output optical power.

[0020] It should be noted that the gain medium adopts a bipolar configuration. By changing the lengths of the erbium-doped silicon nitride waveguide delay lines I5 and 7 and the erbium ion concentration, Gaussian spectral output of the ASE light source is achieved. Passive devices are constructed on silicon nitride, including wavelength division multiplexers I4 and II10, uniform beam splitters I3 and II8, non-uniform beam splitter 12, Sagnac ring mirror 9, etc., to reduce the geometric size of passive devices in the ASE light source. The ASE output power is monitored in real time by detector 15, and the power of 980 nm laser 1 is adjusted by laser current control module 16 to achieve stable power output.

[0021] Specifically, the mode converter I2 is an inverted cone structure with a tip width of 100 nm, a tail width of 1000 nm, a waveguide thickness of 800 nm, and an adiabatic transition length of 1000 μm.

[0022] It should be noted that the 980 nm laser 1 is integrated into the chip via a hybrid mode converter I2 and used as the pump source for the erbium-doped silicon nitride waveguide delay line I5 and the erbium-doped silicon nitride waveguide delay line II7. Specifically, the mode converter II14 is also an inverted cone structure with a tip width of 1 μm, a tail width of 30 μm, and an adiabatic conversion length of 1000 μm.

[0023] It should be noted that, through the hybrid integrated detector 15, the on-chip ASE output is expanded through the mode converter II 14 to match the target area of ​​the detector 15.

[0024] Specifically, the Sagnac ring mirror 9 consists of a semi-circular waveguide with a radius of 100 μm and two symmetrical S-bend waveguides with a width of 200 μm and a height of 100 μm.

[0025] It should be noted that the ASE light source is reflected backward by the Sagnac ring reflector 9 to increase its output power.

[0026] Specifically, wavelength division multiplexer I4 and wavelength division multiplexer II10 consist of two close-proximity straight waveguides, forming a directional coupler structure, as shown in Figure 2. When light of both 980 nm and 1560 nm wavelengths is input to port P1, separation of different wavelengths can be achieved at the port by setting an appropriate coupling region length. Figure 3 shows the calculated transmittance of port P3 under different coupling region lengths L when the waveguide width is 1 μm and the waveguide gap is 200 nm. It can be seen that when L = 533 nm, the transmittance of port P3 is 0 at 1560 nm; and close to 100% at 980 nm. Figure 4 shows the simulated electric field at 1560 nm and 980 nm, respectively. It can be seen that under these conditions, the 1560 nm light wave is output from port P2, while the 980 nm light wave is output from port P3.

[0027] It should be noted that on-chip wavelength division multiplexers I4 and 210 were constructed based on directional couplers to achieve spatial separation of 980 nm pump light and 1560 nm ASE emitted light.

[0028] Specifically, the uniform beam splitter I3 and uniform beam splitter II8 are based on the multimode interference effect, with a multimode interference region length of 15 μm and a width of 5 μm.

[0029] It should be noted that uniform beam splitter I3 and uniform beam splitter II8 are constructed based on the multimode interference effect to achieve 50:50 beam splitting.

[0030] Specifically, the non-uniform beam splitter 12 is also based on a directional coupler structure, with a coupling gap of 200 nm and a length of 3.3 μm, corresponding to a beam splitting ratio of 99:1 between the upper and lower channels at 1560 nm. Figure 5 shows the simulated electric field at 1560 nm.

[0031] It should be noted that a non-uniform beam splitter 12 is constructed based on a directional coupler to achieve a 99:1 output beam split.

[0032] The on-chip isolators I6 and 211 consist of an all-pass micro-ring filter and an aluminum nitride transducer. The wavelength of the forward-transmitted light is located at the non-resonant wavelength of the micro-filter and will not enter the micro-ring. The microwave signal is loaded onto the aluminum nitride layer through molybdenum and aluminum. Under the action of the microwave signal, the aluminum nitride generates an acoustic wave that acts on the micro-ring, so that the backward-transmitted light meets the micro-ring resonance condition and then enters the micro-ring and is eventually dissipated.

[0033] It should be noted that by utilizing the piezoelectric effect of aluminum nitride and combining it with silicon nitride micro-ring filters to construct on-chip isolators I6 and 211, the geometric size of isolators in the ASE light source is reduced.

[0034] Example 2: Figure 6 shows a schematic diagram of the passive waveguide region structure, and its fabrication process is shown in Figure 7: Step 1: Select a single-layer polished silicon wafer as the substrate, and generate a 5 μm thick silicon oxide layer on its upper surface by wet oxidation as the lower cladding layer; Step 2: Deposit an 800 nm thick silicon nitride layer on its surface by low-pressure chemical vapor deposition (LPCVD) as the waveguide core material; Step 3: Spin-coat a layer of photoresist on the surface of the silicon nitride layer; Step 4: Define the waveguide pattern on the photoresist by photolithography; Step 5: Transfer the waveguide pattern on the photoresist to the silicon nitride by dry etching; Step 6: Remove the remaining photoresist by dry and wet etching; Step 7: Deposit a 3 μm thick silicon oxide layer on its surface by LPCVD as the waveguide upper cladding material.

[0035] The passive waveguide structure includes mode speckle converter I2, mode speckle converter II14, uniform beam splitter I3, uniform beam splitter II8, wavelength division multiplexer I4, Sagnac ring mirror 9, non-uniform beam splitter 12, output waveguide 13, and connections between different on-chip structures.

[0036] Example 3, Figure 8, is a schematic diagram of the erbium-doped silicon nitride waveguide structure. Its fabrication process is shown in Figure 9: Step 1: After the silicon nitride waveguide is formed, a layer of photoresist is spin-coated onto the sample; Step 2: The area of ​​the silicon nitride waveguide to be doped with erbium is exposed by photolithography; Step 3: A certain concentration of erbium ions is doped into the passive silicon nitride waveguide in the exposed area by ion implantation (the area within the dotted line frame in Figure 1); Step 4: The remaining photoresist is removed by dry and wet methods; Step 5: A 3 μm thick silicon oxide layer is deposited on its surface by LPCVD as the cladding material of the waveguide.

[0037] The erbium-doped silicon nitride waveguide structure includes erbium-doped silicon nitride waveguide delay line I5 and erbium-doped silicon nitride waveguide delay line II7.

[0038] Example 4, Figure 10, is a schematic diagram of the isolator structure, and its fabrication process is shown in Figure 11: Step 1: After the silicon nitride waveguide is formed, a 100 nm thick layer of molybdenum is deposited on the sample surface by Physical Vapor Deposition (PVD); Step 2: A 1 μm thick layer of aluminum nitride is deposited on the sample surface by PVD; Step 3: A layer of photoresist is spin-coated on the sample surface; Step 4: The patterns of the molybdenum electrode and the aluminum nitride transducer are defined by photolithography; Step 5: The patterns are transferred to the molybdenum and aluminum nitride layers respectively by dry etching; Step 6: The remaining photoresist is removed by dry and wet etching; Step 7: A layer of photoresist is spin-coated on the sample surface; Step 8: The aluminum electrode pattern is defined by photolithography; Step 9: A 100 nm thick layer of molybdenum is deposited on the sample surface by PVD. Aluminum of nm; Step 10: Remove the remaining photoresist by dry and wet methods to construct the aluminum electrode; Step 11: Spin-coat a layer of photoresist on the sample surface; Step 12: Define the silicon oxide pattern to be etched by photolithography; Step 13: Transfer the pattern to the silicon oxide layer by dry etching, and etch all the silicon oxide obtained by LPCVD and thermal oxidation; Step 14: Etch the exposed silicon by hydrofluoric acid wet etching to achieve bottom etching and realize the suspension of silicon nitride waveguide; Step 15: Remove the remaining photoresist by dry and wet methods to form the long frame area in Figure 1.

[0039] The on-chip isolator structure includes on-chip isolators I6 and 211.

[0040] In summary, this invention provides a chip-level Gaussian ASE light source structure, integrating various passive devices on a silicon nitride platform to construct a two-way bipolar Gaussian ASE light source. By constructing an erbium-doped silicon nitride waveguide delay line, an on-chip isolator, a wavelength division multiplexer, a uniform and non-uniform beam splitter, and a Sagnac ring mirror on the silicon nitride platform, and by integrating a 980nm pump laser and a detector, the ASE light source is realized on a single chip. Compared to fiber optic ASE light sources, this chip-level ASE light source eliminates fiber splices and avoids fiber coiling, improving the stability of the light source. Furthermore, the two-way design based on the Sagnac ring increases the output power of the light source, and the bipolar design based on the two-segment erbium-doped silicon nitride waveguide achieves Gaussian spectral output.

Claims

1. A chip-level Gaussian ASE light source structure, characterized in that, The system includes a 980 nm laser (1), a mode converter I (2), a uniform beam splitter I (3), a wavelength division multiplexer I (4), an erbium-doped silicon nitride waveguide delay line I (5), an on-chip isolator I (6), an erbium-doped silicon nitride waveguide delay line II (7), a uniform beam splitter II (8), a Sagnac ring mirror (9), a wavelength division multiplexer II (10), an on-chip isolator II (11), a non-uniform beam splitter (12), an output waveguide (13), a mode converter II (14), a detector (15), a laser current control module (16), and a detector current output module (17), wherein: 980 nm A nm laser (1) is connected to a mode converter I (2), which is connected to a uniform beam splitter I (3). The uniform beam splitter I (3) is connected to wavelength division multiplexer I (4) and wavelength division multiplexer II (10), respectively. Wavelength division multiplexer I (4) is connected to erbium-doped silicon nitride waveguide delay line I (5) and uniform beam splitter II (8), respectively. Uniform beam splitter II (8) is connected to a Sagnac ring mirror (9). Erbium-doped silicon nitride waveguide delay line I (5) is connected to an on-chip isolator I (6), and on-chip isolator I (6) is connected to the erbium-doped silicon nitride waveguide delay line I (9). The delay line II (7) is connected, the erbium-doped silicon nitride waveguide delay line II (7) is connected to the wavelength division multiplexer II (10), the wavelength division multiplexer II (10) is connected to the on-chip isolator II (11), the on-chip isolator II (11) is connected to the non-uniform beam splitter (12), the non-uniform beam splitter (12) is connected to the output waveguide (13) and the mode converter II (14) respectively, the mode converter II (14) is connected to the detector (15), the detector (15) is connected to the detector current output module (17), and the laser current control module (16) is connected to the 980 nm laser (1).

2. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, A 980 nm laser (1) emits pump light, which is coupled into a silicon nitride waveguide through a mode converter I (2). The beam is then split into two beams proportionally by a uniform beam splitter I (3). The lower beam enters the erbium-doped silicon nitride waveguide delay line I (5) through a wavelength division multiplexer I (4), while the upper beam enters the erbium-doped silicon nitride waveguide delay line II (7) through a wavelength division multiplexer II (10).

3. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, Erbium-doped silicon nitride waveguide delay line I (5) and erbium-doped silicon nitride waveguide delay line II (7) generate forward and backward ASE respectively under the excitation of 980 nm pump light; erbium-doped silicon nitride waveguide delay line II (7) absorbs the ASE emitted by erbium-doped silicon nitride waveguide delay line I (5), while its superfluorescence is concentrated in the long wavelength range.

4. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, On-chip isolator I (6) isolates erbium-doped silicon nitride waveguide delay line I (5) and erbium-doped silicon nitride waveguide delay line II (7).

5. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, The backward ASE emitted by the erbium-doped silicon nitride waveguide delay line I (5) passes through wavelength division multiplexer I (4) and uniform beam splitter II (8) in sequence, and is then reflected by the Sagnac ring mirror (9) to be converted into a forward ASE.

6. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, The forward ASE generated by the erbium-doped silicon nitride waveguide delay line I (5) and the erbium-doped silicon nitride waveguide delay line II (7) enters the on-chip isolator II (11) via wavelength division multiplexer II (10).

7. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, The ASE emitted by the on-chip isolator II (11) is split into two beams by a non-uniform beam splitter (12) with a splitting ratio of 99:

1. The ASE with 99% power is finally output through the output waveguide (13), while the ASE with 1% power enters the detector (15) for monitoring optical power.

8. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, The photocurrent in the detector (15) enters the detector current output module to record the output power of the ASE light source in real time. When the output power of the ASE light source is lower or higher than the standard output power, the laser current control module increases or decreases the laser current to stabilize the output optical power.

9. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, Both the pattern converter I (2) and the pattern converter II (14) are inverted cone structures.

10. The chip-level Gaussian ASE light source structure according to claim 1, characterized in that, The Sagnac ring mirror (9) consists of a semi-circular waveguide and two symmetrical S-bend waveguides.

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