Control method for wafer bonding machine and wafer bonding machine

Abstract

The invention discloses a control method for a wafer bonding machine and the wafer bonding machine, and relates to the technical field of wafer bonding processes. The wafer bonding machine comprises a vacuum transmission arm used for transmitting a wafer and an adsorption mechanism used for adsorbing the wafer, and is characterized in that the control method comprises the following steps: obtaining the offset height of the wafer at the vacuum transmission arm at a switching position; the vacuum conveying arm is controlled to move upwards by the deviation height; obtaining the vacuum degree of the adsorption mechanism; judging whether the vacuum degree is smaller than a standard value; if yes, the vacuum conveying arm is controlled to continue to move upwards till the vacuum degree is larger than or equal to the standard value. According to the invention, the deviation height of the wafer is compensated by controlling the lifting height of the vacuum transmission arm, so that the adsorption mechanism can completely adsorb the wafer, and the adsorption stability is improved.

Description

Technical Field

[0001] This invention relates to the field of wafer bonding technology, and more specifically to a control method for a wafer bonding machine and a wafer bonding machine. Background Technology

[0002] Wafer bonding technology refers to the process of tightly joining two mirror-polished homogeneous or heterogeneous wafers through chemical and physical interactions. After bonding, the atoms at the interface react under the influence of external forces to form covalent bonds, achieving a specific bonding strength at the interface. There are various bonding processes used in wafer bonding, and different processes utilize different wafer specifications. These specifications include wafer weight, thickness, material, and surface characteristics.

[0003] In the prior art, the adsorption area of ​​the vacuum transfer arm of the wafer bonding machine is determined, and the transfer path of the vacuum transfer arm is fixed. That is, when the traditional vacuum arm picks up a thicker wafer, the increased weight of the wafer itself will cause the vacuum arm to be unable to maintain a horizontal position due to the weight of the wafer. The wafer will then tilt at a certain angle, causing the vertically descending adsorption mechanism to be unable to fit tightly against the wafer during the subsequent transfer and pick-up process. This results in a decrease in the adsorption force of the adsorption mechanism on the wafer, thus causing a vacuum failure and making it impossible to continue the process. Summary of the Invention

[0004] One objective of the first aspect of this invention is to provide a control method for a wafer bonding machine, which solves the technical problem of unstable adsorption when a single machine transfers or switches wafers of different specifications in the prior art.

[0005] Another objective of the first aspect of this invention is to improve the control accuracy of the control method.

[0006] A second aspect of the present invention is to provide a wafer bonding machine for performing the above-described control method.

[0007] According to a first aspect of the present invention, the present invention provides a control method for a wafer bonding machine, the wafer bonding machine comprising a vacuum transfer arm for transporting wafers and an adsorption mechanism for adsorbing the wafers, the control method comprising the following steps:

[0008] Obtain the offset height of the wafer at the vacuum transfer arm at the transfer position;

[0009] Control the vacuum transfer arm to move upward by the offset height;

[0010] Obtain the vacuum level of the adsorption mechanism;

[0011] Determine whether the vacuum level is less than the standard value;

[0012] If so, control the vacuum transfer arm to continue moving upwards until the vacuum level is greater than or equal to the standard value.

[0013] Optionally, the step of determining that the adsorption mechanism has not completely adsorbed the wafer, and controlling the vacuum transfer arm to continue moving upward until the vacuum level equals the standard value, includes:

[0014] The vacuum conveying arm is moved by a preset unit upward displacement.

[0015] The vacuum level is detected every time the preset unit is moved upward, until the vacuum level is greater than or equal to the standard value.

[0016] Optionally, before the step of controlling the movement of the vacuum transfer arm by a preset unit upward displacement, the method further includes:

[0017] Determine whether the difference between the vacuum level and the standard value is greater than a first threshold.

[0018] If so, set the preset unit upward movement amount to the first unit upward movement amount;

[0019] If not, the preset unit upward movement amount is set to the second unit upward movement amount, where the first unit upward movement amount is greater than the second unit upward movement amount.

[0020] Optionally, after the step of controlling the vacuum transfer arm to continue moving upward until the vacuum level is greater than or equal to the standard value, the method further includes:

[0021] The actual displacement of the vacuum transfer arm when the vacuum level is greater than or equal to the standard value is stored, and the actual displacement is used as the upward displacement of the vacuum transfer arm at the transfer position in the next instance.

[0022] Optionally, after determining whether the vacuum level is less than a standard value, the method further includes:

[0023] If not, reduce the offset height to the corrected downward displacement amount, store the corrected downward displacement amount, and use the corrected downward displacement amount as the upward displacement amount of the vacuum transfer arm at the transfer position for the next time.

[0024] Optionally, the amount of reduction in the offset height is determined based on the difference between the vacuum level and the standard value.

[0025] Optionally, the offset height is predetermined based on experiments, and different offset heights correspond to different wafer specifications.

[0026] Optionally, the step of controlling the vacuum transfer arm to continue moving upward until the vacuum level equals the standard value includes:

[0027] Determine whether the difference between the vacuum level and the standard value is greater than a first threshold.

[0028] If so, control the vacuum conveying arm to move upward at a first upward speed and monitor the vacuum level in real time;

[0029] If not, control the vacuum transfer arm to move upward at a second upward speed and monitor the vacuum level in real time, wherein the first upward speed is greater than the second upward speed.

[0030] According to a second aspect of the present invention, the present invention also provides a wafer bonding machine for performing the control method described in any of the preceding claims, the wafer bonding machine comprising:

[0031] A vacuum transfer arm for transferring a wafer to a loading area, the vacuum transfer arm being configured to move along a first horizontal direction;

[0032] The adsorption mechanism includes a plurality of corrugated vacuum adsorption pipes spaced apart along the first horizontal direction, the bottom surfaces of the plurality of vacuum adsorption pipes having the same height, and the adsorption mechanism is configured to adsorb the wafer when the vacuum conveying arm conveys it to the loading area.

[0033] Optionally, the vacuum transfer arm includes:

[0034] The adsorption end is located at the end of the vacuum transfer arm. The adsorption end includes a plurality of adsorption holes, which are arranged to be spaced apart relative to the peripheral edge of the wafer.

[0035] This invention obtains the offset height of the target wafer at the transfer position, that is, obtains the corresponding offset height at the transfer position according to the target wafer of different specifications, and controls the vacuum transfer arm to move upward by an offset height, so as to drive the wafer upward by an offset height, so that the adsorption mechanism can completely adsorb the wafer. The stability of the adsorption mechanism in adsorbing the wafer is judged by detecting the vacuum degree after the adsorption mechanism adsorbs the wafer. That is, when the vacuum degree of the adsorption mechanism is greater than or equal to the standard value, it is determined that the adsorption mechanism has stably adsorbed the wafer, thereby ensuring the successful wafer transfer between the adsorption mechanism and the vacuum transfer arm at the transfer position, thereby improving the adsorption stability of the wafer bonding machine for wafers of different specifications.

[0036] Furthermore, when the present invention determines that the adsorption mechanism has not completely adsorbed the wafer, i.e., when the vacuum degree of the adsorption mechanism is less than the standard value, it controls the vacuum conveying arm to move upward by a preset unit amount. During the upward movement, the vacuum degree of the adsorption mechanism is detected every preset unit amount of upward movement until the vacuum degree is greater than or equal to the standard value. At this point, it is determined that the adsorption mechanism has completely adsorbed the wafer, thereby ensuring the adsorption stability of the adsorption structure on the wafer. At the same time, by detecting the vacuum degree of the adsorption mechanism every preset unit amount of upward movement, it is possible to prevent the adsorption mechanism from over-adsorbing the wafer due to excessive upward movement of the vacuum conveying arm, thereby ensuring the control accuracy of the control method.

[0037] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0038] The following sections will describe some specific embodiments of the invention in detail by way of example and not limitation, with reference to the accompanying drawings. The same reference numerals in the drawings denote the same or similar parts or portions. Those skilled in the art should understand that these drawings are not necessarily drawn to scale. In the drawings:

[0039] Figure 1 This is a schematic flowchart of a control method for a wafer bonding machine according to an embodiment of the present invention;

[0040] Figure 2 This is another schematic flowchart of a control method for a wafer bonding machine according to an embodiment of the present invention;

[0041] Figure 3 This is a schematic structural diagram of an adsorption mechanism and a wafer in an adsorption state according to an embodiment of the present invention.

[0042] Figure label:

[0043] 100 - Adsorption mechanism, 110 - Corrugated vacuum adsorption pipe, 200 - Wafer. Detailed Implementation

[0044] The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and are not intended to limit the scope of the invention.

[0045] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, it should be noted that, for ease of description, only the parts relevant to this application are shown in the accompanying drawings, not the entire structure. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application.

[0046] The terms “comprising” and “having”, and any variations thereof, used in this application are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such process, method, product, or apparatus.

[0047] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0048] Figure 1 This is a schematic flowchart of a control method for a wafer bonding machine according to an embodiment of the present invention.

[0049] like Figure 1 As shown, this invention provides a control method for a wafer bonding machine. The wafer bonding machine includes a vacuum transfer arm for transporting a wafer 200 and an adsorption mechanism 100 for adsorbing the wafer 200. The vacuum transfer arm transports the wafer 200 from an initial position to above the bonding process loading area of ​​the wafer 200. The adsorption mechanism 100 then adsorbs the wafer 200 located above the loading area. The vacuum transfer arm is then removed from the surface of the wafer 200, leaving the adsorption mechanism 100 in place. By controlling the up-and-down movement of the adsorption mechanism 100, the wafer 200 is controlled to enter and exit the loading area for bonding of the wafer 200 entering the loading area and removal of the bonded wafer 200 for the next process operation. The control method for the wafer bonding machine includes the following steps:

[0050] Step S100: Obtain the offset height of wafer 200 at the vacuum transfer arm at the transfer position;

[0051] Step S200: Control the vacuum conveyor arm to move upwards by offset height;

[0052] Step S300: Obtain the vacuum level of the adsorption mechanism 100;

[0053] Step S400: Determine if the vacuum level is less than the standard value;

[0054] Step S500: If yes, control the vacuum transfer arm to continue moving upward until the vacuum level is greater than or equal to the standard value.

[0055] In this embodiment, the offset height of the wafer 200 at the vacuum transfer arm is obtained according to its specifications. The vacuum transfer arm is then controlled to move upward by the offset height until the adsorption mechanism 100 adsorbs the wafer 200. The vacuum degree of the adsorption mechanism 100 is obtained, and the adsorption mechanism 100 is used to determine whether it has completely adsorbed the wafer 200. If the vacuum degree is less than the standard value, the vacuum transfer arm is controlled to continue moving upward until the vacuum degree is greater than or equal to the standard value, thus ensuring that the adsorption mechanism 100 completely adsorbs the wafer 200. Here, the offset height is the vertical distance between the lowest point of the tilted wafer 200 surface and the horizontal plane of the vacuum transfer arm. The transition position refers to the position where the vacuum transfer arm transfers the wafer 200 to the loading area and the adsorption mechanism 100 adsorbs the wafer 200. The specifications of the wafer 200 refer to its weight, thickness, or material.

[0056] In this embodiment, by obtaining the offset height of the target wafer 200 at the transfer position, that is, obtaining the corresponding offset height at the transfer position according to the target wafer 200 of different specifications, the vacuum transfer arm is controlled to move upward by an offset height, so as to drive the wafer 200 to move upward by an offset height, so that the adsorption mechanism 100 can completely adsorb the wafer 200. The stability of the adsorption mechanism 100 in adsorbing the wafer 200 is judged by detecting the vacuum degree after the adsorption mechanism 100 adsorbs the wafer 200. That is, when the vacuum degree of the adsorption mechanism 100 is greater than or equal to the standard value, it is determined that the adsorption mechanism 100 stably adsorbs the wafer 200, thereby ensuring that the adsorption mechanism 100 and the vacuum transfer arm at the transfer position are successfully transferred, thereby improving the adsorption stability of the wafer bonding machine for wafers 200 of different specifications.

[0057] Figure 2 This is another schematic flowchart of a control method for a wafer bonding machine according to an embodiment of the present invention.

[0058] like Figure 2 As shown, in a further embodiment, step S400 further includes:

[0059] Step S410: When the vacuum level is greater than or equal to the standard value, reduce the offset height to the corrected downward displacement amount, store the corrected downward displacement amount, and use the corrected downward displacement amount as the upward displacement amount of the vacuum transfer arm at the transfer position in the next operation.

[0060] The steps preceding step S500 also include:

[0061] Step S450: Determine whether the difference between the vacuum degree and the standard value is greater than the first threshold. If yes, proceed to step S452; otherwise, proceed to step S454.

[0062] Step S452: Set the preset unit upward movement amount to the first unit upward movement amount;

[0063] Step S454: Set the preset unit upward movement amount to the second unit upward movement amount, where the first unit upward movement amount is greater than the second unit upward movement amount;

[0064] Step S500 includes:

[0065] Step S510: Control the movement of the vacuum conveyor arm by a preset unit upward displacement;

[0066] Step S520: Detect the vacuum level after each preset unit upward movement;

[0067] Step S530: Determine whether the vacuum degree is greater than or equal to the standard value. If yes, proceed to step S532; otherwise, return to step S510. Step S532: Store the actual movement amount of the vacuum transfer arm when the vacuum degree is greater than or equal to the standard value, and use the actual movement amount as the upward movement amount of the vacuum transfer arm at the transfer position in the next step.

[0068] In this embodiment, when the vacuum level is less than the standard value, the vacuum conveying arm is moved by a preset unit upward movement amount. It is determined whether the difference between the vacuum level and the standard value is greater than a first threshold. If so, the preset unit upward movement amount is set as the first unit upward movement amount. If not, the preset unit upward movement amount is set as the second unit upward movement amount. The vacuum level is detected every time the preset unit upward movement amount is moved, and it is determined whether the vacuum level is greater than or equal to the standard value. If so, the actual movement amount of the vacuum conveying arm when the vacuum level is greater than or equal to the standard value is stored, and the actual movement amount is used as the upward movement amount of the vacuum conveying arm at the transfer position in the next step. If not, the vacuum conveying arm is moved by the preset unit upward movement amount, and the subsequent steps are repeated until the vacuum level is greater than or equal to the standard value.

[0069] In step S510, after determining that the adsorption mechanism 100 and the wafer 200 are not completely adsorbed, that is, when it is determined that the vacuum degree of the adsorption mechanism 100 is less than the standard value, the vacuum conveying arm is controlled to move upward by a preset unit upward movement. During the upward movement, the vacuum degree of the adsorption mechanism 100 is detected every preset unit upward movement until the vacuum degree is greater than or equal to the standard value. At this point, it is determined that the adsorption mechanism 100 has completely adsorbed the wafer 200, thereby ensuring the adsorption stability of the adsorption structure on the wafer 200. At the same time, by detecting the vacuum degree of the adsorption mechanism 100 every preset unit upward movement, it is possible to prevent the adsorption mechanism 100 from over-adsorbing the wafer 200 due to excessive upward movement of the vacuum conveying arm, thereby ensuring the control accuracy of the control method.

[0070] In this embodiment, the magnitude of the preset unit upward movement is controlled by judging the difference between the vacuum level and the standard value. Specifically, when the difference between the vacuum level and the standard value is greater than a first threshold, the preset unit upward movement is set to the first unit upward movement, meaning the vacuum conveying arm is controlled to move upward by the first unit upward movement until the vacuum level of the adsorption mechanism 100 is greater than or equal to the standard value, ensuring that the adsorption mechanism 100 completely adsorbs the wafer 200. When the difference between the vacuum level and the standard value is less than the first threshold, the preset unit upward movement is set to the second unit upward movement, meaning the vacuum conveying arm is controlled to move upward by the second unit upward movement until the vacuum level of the adsorption mechanism 100 is greater than or equal to the standard value, ensuring that the adsorption mechanism 100 completely adsorbs the wafer 200. Furthermore, the first unit upward movement is greater than the second unit upward movement; that is, when the vacuum level is significantly lower than the standard value, the preset unit upward movement is controlled to be larger, allowing the vacuum conveying arm to adjust to the standard value at a faster rate, thus improving the adjustment efficiency of the control method. Here, the first threshold is 20% of the standard value increment, the first unit upward movement is 0.2 mm per step, and the second unit upward movement is 0.1 mm per step.

[0071] In step S532, the actual displacement of the vacuum transfer arm when the vacuum level is greater than or equal to the standard value is stored, and the actual displacement is used as the upward displacement of the vacuum transfer arm at the transfer position in the next transfer. That is, the offset height of the wafer 200 of the corresponding specification is updated and stored in real time. By recording and adjusting the actual displacement of the vacuum transfer arm, it can reach the transfer position more accurately in the next transfer, thereby improving the accuracy and stability of the transfer. Furthermore, due to the improvement of the transfer accuracy and stability, the downtime and resource waste caused by transfer failure can be reduced, thereby improving production efficiency.

[0072] In step S410, if the vacuum level is determined to be greater than or equal to the standard value, meaning the offset height of the vacuum conveyor arm's upward movement is greater than the actual offset height of the wafer 200, it may cause the adsorption mechanism 100 to over-adsorb the wafer 200, resulting in resource waste. By correcting the downward movement, the upward movement of the vacuum conveyor arm can be precisely adjusted, allowing it to reach the transfer position more accurately, thereby improving the accuracy of the conveying. The application of the corrected downward movement can also reduce errors caused by the offset height, ensuring that each conveying achieves the expected accuracy requirements. Furthermore, since the corrected downward movement is stored in the control system, no additional adjustment is needed for the next conveying, saving adjustment time and improving the overall efficiency of the production line. Simultaneously, by precisely controlling the movement of the vacuum conveyor arm, the poor adsorption stability of the adsorption mechanism 100 caused by inaccurate movement can be reduced, improving the stability of the wafer bonding machine.

[0073] In a further embodiment, the reduction in offset height is determined based on the difference between the vacuum level and a standard value. In this embodiment, when the difference between the vacuum level and the standard value is greater than a second threshold, the offset height of the vacuum conveying arm is reduced by a first reduction amount; when the difference is less than a third threshold, the offset height of the vacuum conveying arm is reduced by a second reduction amount, where the first reduction amount is greater than the second reduction amount. By using different levels of reduction based on the magnitude of the difference between the vacuum level and the standard value, more precise control is achieved. Specifically, when the difference is large, a larger reduction amount is used to quickly adjust the offset height, ensuring the conveying arm reaches the target position more accurately. When the difference is small, a smaller reduction amount is used for fine-tuning to maintain conveying stability. Furthermore, through graded control, unnecessary over-adjustment when the vacuum level is close to the standard value can be avoided, thereby reducing energy waste.

[0074] In a further embodiment, the offset height is predetermined based on experiments, with different offset heights corresponding to wafers 200 of different specifications. In this embodiment, the vacuum transfer arm first learns in a teaching mode to obtain the offset height for transferring wafers 200 of different specifications on the same wafer bonding machine. For example, the vacuum transfer arm transfers a preset mass of wafers 200 above the loading area, records the initial height of the lowest point of the contact surface between the vacuum transfer arm and the wafer 200, controls the vacuum transfer arm to move upward a preset distance until the adsorption mechanism 100 contacts the wafer 200, measures the vacuum degree of the adsorption mechanism 100, and compares the vacuum degree with a standard value. If the vacuum degree is not less than the standard value, records the upward movement height of the lowest point of the contact surface between the vacuum transfer arm and the wafer 200. The difference between the upward movement height and the initial height is the offset height of the wafer 200. In other words, during the verification tests of each wafer 200 tester, the offset distance of wafers 200 of different specifications on the vacuum transfer arm is stored and recorded through learning. In practical applications, the offset distance of the corresponding wafer 200 specification can be directly retrieved and the upward offset height of the vacuum transfer arm can be controlled to correct the offset distance of the wafer 200 during the transfer process. This enables the vacuum transfer arm to stably transfer multiple types of wafers 200, thereby improving the compatibility of the wafer bonding machine and increasing the economic benefits of a single wafer bonding machine.

[0075] In another embodiment, step S500 includes:

[0076] Determine whether the difference between the vacuum level and the standard value is greater than the first threshold.

[0077] If so, control the vacuum conveyor arm to move upward at the first upward speed and monitor the vacuum level in real time;

[0078] If not, control the vacuum conveying arm to move upward at a second upward speed and monitor the vacuum level in real time. The first upward speed is greater than the second upward speed.

[0079] In this embodiment, when the difference between the vacuum level and the standard value is greater than a first threshold, the vacuum conveying arm is controlled to move upward at a first upward speed while monitoring the vacuum level in real time until the vacuum level equals the standard value. When the difference between the vacuum level and the standard value is less than the first threshold, the vacuum conveying arm is controlled to move upward at a second upward speed while monitoring the vacuum level in real time until the vacuum level equals the standard value, and the first upward speed is greater than the second upward speed. That is, when the difference between the vacuum level and the standard value is greater than the first threshold, it indicates that the current vacuum level is far below the expected level. At this time, controlling the vacuum conveying arm to move upward at a faster first upward speed can quickly adjust the vacuum level and shorten the time required to reach the standard value. When the vacuum level is close to the standard value, that is, when the difference is less than the first threshold, the second upward speed is switched to a slower speed for fine adjustment, which can avoid over-adjustment caused by excessive speed and improve the control accuracy and stability.

[0080] The present invention also provides a wafer bonding machine for executing the above control method. The control method will not be described in detail here.

[0081] Figure 3 This is a schematic structural diagram of an adsorption mechanism 100 and a wafer 200 in an adsorption state according to an embodiment of the present invention.

[0082] like Figure 3 As shown, in this embodiment, the wafer bonding machine includes a vacuum transfer arm and an adsorption mechanism 100. The vacuum transfer arm is used to transfer the wafer 200 to the loading area. The vacuum transfer arm is configured to move along a first horizontal direction. The adsorption mechanism 100 includes a plurality of corrugated vacuum adsorption pipes 110 arranged at intervals along the first horizontal direction. The bottom surfaces of the plurality of vacuum adsorption pipes are at the same height. The adsorption mechanism 100 is configured to adsorb the wafer 200 when the vacuum transfer arm transfers the wafer to the loading area. The vacuum transfer arm is configured to transfer the wafer 200 to the top of the loading area along the first horizontal direction. The adsorption mechanism 100 then adsorbs the wafer 200 in the loading area. When the wafer 200 transferred by the vacuum transfer arm to the loading area has an offset height, the vacuum transfer arm is controlled to move upward at the offset height until the adsorption mechanism 100 and the wafer 200 are completely adsorbed. Since the multiple vacuum adsorption channels of the adsorption mechanism 100 have a corrugated structure, the vacuum adsorption channels that have been adsorbed with the wafer 200 are compressed under force during the upward movement of the vacuum transfer arm and the wafer 200 until all vacuum adsorption channels and the wafer 200 are completely adsorbed. The corrugated vacuum adsorption channel 110 can support the up and down movement of the vacuum transfer arm to a greater extent, thereby more effectively fitting the wafer 200 with a large warp, enhancing the adsorption force of the adsorption mechanism 100, and thus improving the adsorption stability of the adsorption mechanism 100.

[0083] In a further embodiment, the vacuum transfer arm includes an adsorption end located at the end of the vacuum transfer arm. The adsorption end includes multiple adsorption holes, which are spaced apart relative to the peripheral edge of the wafer 200. In this embodiment, the multiple adsorption holes at the adsorption end of the vacuum transfer arm are spaced apart relative to the peripheral edge of the wafer 200, meaning the adsorption position of the vacuum transfer arm is located in the functionally ineffective region at the edge of the wafer 200. This allows for the adsorption of wafers 200 with special structures such as perforations in the central region, thus expanding the adsorption application range of the vacuum transfer arm.

[0084] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0085] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A control method for a wafer bonding machine, the wafer bonding machine comprising a vacuum transfer arm for conveying wafers and an adsorption mechanism for adsorbing the wafers, characterized in that, The control method includes the following steps: Obtain the offset height of the wafer at the vacuum transfer arm at the transfer position; Control the vacuum transfer arm to move upward by the offset height; Obtain the vacuum level of the adsorption mechanism; Determine whether the vacuum level is less than the standard value; If so, control the vacuum transfer arm to continue moving upwards until the vacuum level is greater than or equal to the standard value.

2. The control method according to claim 1, characterized in that, The step of determining that the adsorption mechanism has not completely adsorbed the wafer, and controlling the vacuum transfer arm to continue moving upward until the vacuum level equals the standard value, includes: The vacuum conveying arm is moved by a preset unit upward displacement. The vacuum level is detected every time the preset unit is moved upward, until the vacuum level is greater than or equal to the standard value.

3. The control method according to claim 2, characterized in that, Before the step of controlling the movement of the vacuum transfer arm by a preset unit upward displacement, the method further includes: Determine whether the difference between the vacuum level and the standard value is greater than a first threshold. If so, set the preset unit upward movement amount to the first unit upward movement amount; If not, the preset unit upward movement amount is set to the second unit upward movement amount, where the first unit upward movement amount is greater than the second unit upward movement amount.

4. The control method according to claim 3, characterized in that, After controlling the vacuum transfer arm to continue moving upward until the vacuum level is greater than or equal to the standard value, the method further includes: The actual displacement of the vacuum transfer arm when the vacuum level is greater than or equal to the standard value is stored, and the actual displacement is used as the upward displacement of the vacuum transfer arm at the transfer position in the next instance.

5. The control method according to any one of claims 1-4, characterized in that, After determining whether the vacuum level is less than the standard value, the method further includes: If not, reduce the offset height to the corrected downward displacement amount, store the corrected downward displacement amount, and use the corrected downward displacement amount as the upward displacement amount of the vacuum transfer arm at the transfer position for the next time.

6. The control method according to claim 5, characterized in that, The amount of reduction in the offset height is determined based on the difference between the vacuum level and the standard value.

7. The control method according to claim 6, characterized in that, The offset height is predetermined based on experiments, and different offset heights correspond to different wafer specifications.

8. The control method according to claim 1, characterized in that, The step of controlling the vacuum transfer arm to continue moving upward until the vacuum level equals the standard value includes: Determine whether the difference between the vacuum level and the standard value is greater than a second threshold. If so, control the vacuum conveying arm to move upward at a first upward speed and monitor the vacuum level in real time; If not, control the vacuum conveying arm to move upward at a second upward speed and monitor the vacuum level in real time, wherein the first upward speed is greater than the second upward speed.

9. A wafer bonding machine, characterized in that, For performing the control method according to any one of claims 1-8, the wafer bonding machine comprises: A vacuum transfer arm for transferring a wafer to a loading area, the vacuum transfer arm being configured to move along a first horizontal direction; The adsorption mechanism includes a plurality of corrugated vacuum adsorption pipes spaced apart along the first horizontal direction, the bottom surfaces of the plurality of vacuum adsorption pipes having the same height, and the adsorption mechanism is configured to adsorb the wafer when the vacuum conveying arm conveys it to the loading area.

10. The wafer bonding machine according to claim 9, characterized in that, The vacuum transfer arm includes: The adsorption end is located at the end of the vacuum transfer arm. The adsorption end includes a plurality of adsorption holes, which are arranged to be spaced apart relative to the peripheral edge of the wafer.

Images