Manufacturing method of glass substrate, glass substrate and packaging structure

Abstract

This application relates to a method for manufacturing a glass substrate, a glass substrate, and a packaging structure. The method includes forming a through-hole on a glass core plate, the through-hole including a first hole segment and a second hole segment that are interconnected. From a first surface to a second surface, the diameter of the first hole segment gradually decreases, and the diameter of the second hole segment gradually increases. A buffer material is filled into the through-hole. The buffer material is etched from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment, and a first through-hole is formed in the buffer material in the second hole segment. Buffer material is filled into the first hole segment and the first through-hole. The buffer material is etched from the side of the glass core plate near the second surface to remove the buffer material in the first through-hole, and a second through-hole is formed in the buffer material in the first hole segment. The second through-hole communicates with the first through-hole to form a conductive hole. A conductive structure is formed within the conductive hole, and the buffer material is disposed around the conductive structure.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a method for manufacturing a glass substrate, the glass substrate, and a packaging structure. Background Technology

[0002] With the booming development of emerging fields such as wearable devices, smartphones, automotive electronics, and artificial intelligence, the application of integrated circuits is also developing towards diversified applications. Advanced packaging technology has gradually become one of the important means to realize the miniaturization, lightweighting, and multifunctionality of electronic products.

[0003] TGV (Through Glass Via) interconnect technology has broad application prospects in fields such as radio frequency devices, microelectromechanical systems, and optoelectronic system integration due to its excellent high-frequency electrical characteristics, good surface flatness, and strong mechanical stability.

[0004] Despite the numerous advantages of existing glass through-hole interconnect technology, its commercialization still faces technical and cost challenges. During thermal processing, the thermal expansion coefficients of the glass material and the conductive material within the glass through-hole differ significantly. This causes thermal stress to concentrate on the hole walls and surface defects of the glass, easily leading to the initiation and propagation of microcracks, ultimately resulting in the overall cracking of the glass core board. Summary of the Invention

[0005] Therefore, it is necessary to provide a method for manufacturing a glass substrate, a glass substrate, and a packaging structure to address the problem of cracks easily occurring during the processing of glass through-hole interconnect technology.

[0006] According to one aspect of this application, a method for manufacturing a glass substrate is provided, comprising:

[0007] A through hole is formed on a glass core board extending from a first surface to a second surface. The through hole includes a first hole segment and a second hole segment that are interconnected. In the direction from the first surface to the second surface, the diameter of the first hole segment gradually decreases, and the diameter of the second hole segment gradually increases. The first surface and the second surface are two opposite surfaces of the glass core board.

[0008] Fill the through-hole with buffer material;

[0009] The buffer material is etched from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment and form a first through hole in the buffer material in the second hole segment.

[0010] Buffer material is filled into the first hole segment and the first through hole;

[0011] The buffer material is etched from the side of the glass core plate near the second surface to remove the buffer material in the first through hole and form a second through hole in the buffer material in the first hole segment. The second through hole communicates with the first through hole to form a through hole.

[0012] A conductive structure is formed within the through hole, and the buffer material is disposed around the conductive structure.

[0013] In one embodiment, before filling the through-hole with buffer material, the method further includes:

[0014] A first mask layer is formed on the side of the glass core plate near the first surface, and the first mask layer covers the first surface and the hole wall of the first hole segment;

[0015] Optionally, the first mask layer comprises a metallic material.

[0016] In one embodiment, the step of etching the buffer material from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment and forming a first through hole in the buffer material in the second hole segment includes:

[0017] The buffer material is etched from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment and form a first through hole in the buffer material in the second hole segment;

[0018] Remove the first mask layer;

[0019] Optionally, when the buffer material is a photosensitive material, the buffer material is etched from the side of the glass core plate near the first surface using a photolithography process;

[0020] When the buffer material is a non-photosensitive material, laser etching or plasma dry etching is used to etch the buffer material from the side of the glass core plate closest to the first surface.

[0021] In one embodiment, prior to the step of filling the first hole segment and the first through hole with buffer material, the method further includes:

[0022] A second mask layer is formed on the side of the glass core plate near the second surface, and an opening communicating with the first through hole is formed on the second mask layer; the orthographic projection of the opening on the second surface is located within the orthographic projection range of the first through hole on the second surface;

[0023] Optionally, the second mask layer comprises a metallic material.

[0024] In one embodiment, the step of etching the buffer material from the side of the glass core plate near the second surface to remove the buffer material in the first through hole and forming a second through hole in the buffer material in the first hole segment includes:

[0025] From the side of the glass core plate near the second surface, and through the opening, the buffer material is etched to form a through hole in the buffer material that extends from the second surface to the first surface;

[0026] Remove the second mask layer;

[0027] Optionally, when the buffer material is a photosensitive material, the buffer material is etched from the side of the glass core plate near the second surface using a photolithography process;

[0028] When the buffer material is a non-photosensitive material, laser etching or plasma dry etching is used to etch the buffer material from the side of the glass core plate closest to the second surface.

[0029] In one embodiment, after forming a conductive structure within the via, the method further includes:

[0030] A redistribution structure is formed on the first surface and the second surface, and the redistribution structure includes a metal wiring layer and a dielectric layer.

[0031] According to another aspect of this application, a glass substrate is provided, comprising:

[0032] A glass core board, comprising a first surface and a second surface disposed opposite to each other, wherein a through hole is provided on the glass core board extending from the first surface to the second surface, the through hole comprising a first hole segment and a second hole segment communicating with each other, wherein in the direction from the first surface to the second surface, the diameter of the first hole segment gradually decreases and the diameter of the second hole segment gradually increases;

[0033] A buffer material is disposed within the through hole, and the buffer material is provided with a through hole extending from the first surface to the second surface;

[0034] A conductive structure is disposed in the through hole, and the buffer material is disposed around the conductive structure.

[0035] In one embodiment, in the direction from the first surface to the second surface, the dimension of the cushioning material gradually decreases and then gradually increases along the thickness direction perpendicular to the glass core plate.

[0036] Optionally, the cushioning material is symmetrical about the central axis of the through hole;

[0037] Optionally, the elastic modulus of the buffer material is less than or equal to 30 GPa.

[0038] In one embodiment, in the direction from the first surface to the second surface, the wall of the through hole extends obliquely away from the central axis of the through hole, and the diameter of the through hole gradually increases; or,

[0039] The wall of the through hole extends in a direction parallel to the central axis of the through hole; in the thickness direction of the glass core plate, the diameter of the through hole remains unchanged and is less than or equal to the minimum diameter of the through hole;

[0040] Optionally, the central axis of the through hole coincides with the central axis of the through hole.

[0041] In one embodiment, the glass substrate further includes a redistribution structure, wherein both the first surface and the second surface are provided with a redistribution structure, and the redistribution structure includes a metal wiring layer and a dielectric layer.

[0042] According to another aspect of this application, a packaging structure is provided, including a glass substrate prepared by the method described in any of the above embodiments or the glass substrate described in any of the above embodiments.

[0043] The above-described method for manufacturing a glass substrate involves forming a through-hole on a glass core plate, including a first hole segment and a second hole segment. The diameter of the first hole segment gradually decreases and the diameter of the second hole segment gradually increases in the direction from the first surface to the second surface. Thus, when etching the buffer material from the side of the glass core plate near the first surface, the buffer material in the first hole segment is removed, while a buffer material with a first through-hole is formed in the second hole segment. After etching the buffer material from the side of the glass core plate near the second surface, a buffer material with a conductive hole is formed within the through-hole. A conductive junction is formed within the conductive hole. The buffer material is arranged around the conductive structure. In this way, the buffer material can provide a buffer between the through hole and the conductive structure, reducing the probability of defects such as cracks at the through hole. In summary, this application forms a buffer material with a conductive hole in the through hole by means of the aperture change of the first hole segment and the second hole segment. This can reduce the difficulty of forming a buffer material with a conductive hole in the through hole and improve the accuracy of forming a buffer material with a conductive hole. By using the buffer material to provide a buffer between the hole wall of the through hole and the conductive structure, the probability of defects such as cracks at the through hole is reduced, thereby improving the preparation yield and reliability of the glass substrate. Attached Figure Description

[0044] Figure 1 This is a flowchart illustrating a method for fabricating a glass substrate in some embodiments of this application.

[0045] Figure 2 This is another flowchart illustrating the method for fabricating a glass substrate in some embodiments of this application.

[0046] Figure 3 This is a process flow diagram illustrating the fabrication method of the glass substrate in some embodiments of this application.

[0047] Figure 4 This is a schematic diagram of the structure of the glass substrate in some embodiments of this application.

[0048] Figure 5 This is another structural schematic diagram of the glass substrate in some embodiments of this application.

[0049] Figure 6 This is yet another structural schematic diagram of the glass substrate in some embodiments of this application.

[0050] Explanation of reference numerals in the attached figures:

[0051] 10. Glass substrate; 11. Glass core board; 11a. First surface; 11b. Second surface; 111. Through hole; 1111. First hole segment; 1112. Second hole segment; 12. Buffer material; 121. Conductive hole; 1211. First through hole; 1212. Second through hole; 13. Conductive structure; 131. Conductive body; 132. Seed layer; 14. Redistribution structure; 141. Metal wiring layer; 142. Dielectric layer;

[0052] 21. First mask layer; 22. Second mask layer; A. First etched shadow area; B. Second etched shadow area. Detailed Implementation

[0053] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a thorough and complete understanding of the disclosure of this application.

[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0055] When describing positional relationships, unless otherwise specified, when an element such as a layer, film, or substrate is referred to as being "on" another element, it can be directly on the other element or there may be intermediate elements. Furthermore, when a layer is referred to as being "below" another layer, it can be directly below it. It is also understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers.

[0056] When using the terms “including,” “having,” and “comprising” as described herein, another component may be added unless explicitly qualifying terms such as “only,” “consisting of,” etc. are used. Unless otherwise stated, singular terms may include plural forms and should not be construed as having a quantity of one.

[0057] It should be understood that although the terms “first,” “second,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, without departing from the scope of this application, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0058] It should also be understood that, in interpreting an element, although not explicitly described, the element is interpreted as including a range of error, which should be within the acceptable deviation range of a particular value as determined by a person skilled in the art. For example, "approximately," "about," or "substantially" can mean within one or more standard deviations, without limitation herein.

[0059] Furthermore, in the instruction manual, the phrase "planar distribution diagram" refers to the diagram when the target part is viewed from above, and the phrase "cross-sectional diagram" refers to the diagram when the target part is viewed from the side as a cross-section taken by vertically cutting the target part.

[0060] Furthermore, the accompanying drawings are not drawn to a 1:1 scale, and the relative dimensions of the components are shown in the drawings only as examples and not necessarily to actual scale.

[0061] During the encapsulation process, glass can withstand higher temperatures better than organic substrates, and its coefficient of thermal expansion is similar to that of silicon, thus reducing stress warping problems caused by thermal mismatch. Furthermore, the higher flatness and lower roughness of the glass surface allow for denser wiring. Its extremely low dielectric constant and dielectric loss improve signal transmission speed and signal integrity. Simultaneously, its excellent chemical stability effectively resists environmental corrosion from moisture, acids, and alkalis. With its superior physical, chemical, and electrical properties, glass is gradually replacing organic substrates.

[0062] Glass through-hole (GHB) interconnect technology, as a packaging technology, achieves electrical connection and signal transmission between the upper and lower surfaces of a glass core board by creating tiny through-holes and filling them with conductive materials such as copper to form conductive pillars. Compared with traditional silicon through-hole (SWI) technology, the lower dielectric constant and good insulation of the glass core board result in less signal delay and lower loss during transmission, and effectively prevent crosstalk between signals.

[0063] However, glass is inherently brittle. During hot processing, due to the large difference between the thermal expansion coefficient of the glass core and the thermal expansion coefficient of the conductive material in the through-hole, thermal stress will be concentrated on the hole wall of the glass through-hole, glass surface defects, etc., which can easily lead to the initiation and expansion of microcracks, eventually causing the glass core to crack as a whole, which seriously affects the yield and reliability of the glass substrate.

[0064] Regarding the aforementioned technical issues, firstly, refer to... Figures 1 to 3 As shown, this application embodiment provides a method for manufacturing a glass substrate 10, including:

[0065] S100. A through hole 111 is formed on the glass core plate 11, extending from the first surface 11a to the second surface 11b. The through hole 111 includes a first hole segment 1111 and a second hole segment 1112 that are interconnected. In the direction from the first surface 11a to the second surface 11b, the diameter of the first hole segment 1111 gradually decreases, and the diameter of the second hole segment 1112 gradually increases. The first surface 11a and the second surface 11b are two surfaces of the glass core plate 11 that are opposite to each other.

[0066] It is understood that the material forming the glass core 11 is not limited. In some embodiments, the material forming the glass core 11 may include pure silica glass, soda-lime glass, borosilicate glass, and aluminosilicate glass, etc. In other embodiments, fluorine glass, phosphate glass, chalcogenide glass, etc., may also be used as the material for the glass core 11. In other embodiments, the material forming the glass core 11 may also include other additives to form glass with specific physical properties. These additives may include magnesium, sodium, calcium, manganese, aluminum, lead, boron, iron, chromium, potassium, sulfur, antimony, and carbonates of these elements and other elements.

[0067] See Figure 3As shown, from the first surface 11a to the second surface 11b, the diameter of the first hole segment 1111 gradually decreases, while the diameter of the second hole segment 1112 gradually increases. That is, the longitudinal cross-sections of the first hole segment 1111 and the second hole segment 1112 can be isosceles trapezoids, and the longitudinal cross-section of the through hole 111 is hourglass-shaped. The cross-sections of the first hole segment 1111 and the second hole segment 1112 can be circular. The depths of the first hole segment 1111 and the second hole segment 1112 can be equal or unequal; the depths of both the first hole segment 1111 and the second hole segment 1112 can be half the thickness of the glass core plate 11.

[0068] In some embodiments, the through-hole 111 can be formed using laser-induced wet etching technology. Specifically, firstly, a laser is used to modify the opening area of ​​the glass core plate 11. The laser can scan the glass core plate 11 point by point or layer by layer according to a preset path. The laser energy, through nonlinear absorption effect, can cause changes in the internal structure of the glass core plate 11, including the generation of microcracks and defects, density changes, and chemical bond breaking, thereby significantly improving the chemical activity of the glass in the opening area. Then, a solution such as hydrofluoric acid is used to etch the opening area. Hydrofluoric acid can react chemically with silicon dioxide to generate soluble silicates, thereby achieving the effect of dissolving the glass. The etching process starts simultaneously from the first surface 11a and the second surface 11b of the glass core plate 11 and rapidly advances into the interior of the glass core plate 11 until a through-hole 111 is formed through the glass core plate 11. From one end near the first surface 11a to the other end near the second surface 11b, the diameter of the through hole 111 gradually decreases and then gradually increases. The hole wall of the through hole 111 first extends inclined towards the central axis of the through hole 111, and then extends inclined away from the central axis.

[0069] S200, fill the through hole 111 with buffer material 12.

[0070] In some embodiments, the elastic modulus of the cushioning material 12 is less than or equal to 30 GPa.

[0071] S300, the buffer material 12 is etched from the side of the glass core plate 11 near the first surface 11a to remove the buffer material 12 in the first hole segment 1111, and a first through hole 1211 is formed in the buffer material 12 in the second hole segment 1112.

[0072] See Figure 3As shown, since the aperture of the first hole segment 1111 gradually decreases and the aperture of the second hole segment 1112 gradually increases in the direction from the first surface 11a to the second surface 11b, when the buffer material 12 is etched from the side of the glass core plate 11 near the first surface 11a, the hole wall of the second hole segment 1112 is relatively concave to define the first etching shadow area A. The buffer material 12 located in the first etching shadow area A is not affected by etching, thereby forming the first through hole 1211 in the buffer material 12 in the second hole segment 1112, and the buffer material 12 in the first hole segment 1111 can be completely removed.

[0073] S400, fill the first hole segment 1111 and the first through hole 1211 with buffer material 12.

[0074] S500: The buffer material 12 is etched from the side of the glass core plate 11 near the second surface 11b to remove the buffer material 12 in the first through hole 1211 and form a second through hole 1212 in the buffer material 12 in the first hole segment 1111. The second through hole 1212 is connected to the first through hole 1211 to form a through hole 121.

[0075] See Figure 3 As shown, since the aperture of the first hole segment 1111 gradually decreases and the aperture of the second hole segment 1112 gradually increases in the direction from the first surface 11a to the second surface 11b, when the buffer material 12 is etched from the side of the glass core plate 11 near the second surface 11b to remove the buffer material 12 in the first through hole 1211, the hole wall of the first hole segment 1111 is relatively concave to define the second etching shadow area B. The buffer material 12 located in the second etching shadow area B will not be affected by etching, and a second through hole 1212 communicating with the first through hole 1211 is formed in the buffer material 12 in the first hole segment 1111. The first through hole 1211 and the second through hole 1212 together constitute the through hole 121.

[0076] S600, a conductive structure 13 is formed in the through hole 121, and a buffer material 12 surrounds the conductive structure.

[0077] The conductive structure 13 is located inside the through hole 121. The buffer material 12 located in the first hole segment 1111 and the second hole segment 1112 is arranged around the conductive structure 13. The buffer material 12 can provide buffer between the hole wall of the through hole 111 and the conductive structure 13, reducing the probability of defects such as cracks appearing at the through hole 111.

[0078] In some embodiments, see Figure 3 As shown, a metal seed layer 132 is first formed on the wall of the via 121, and then an electroplating process is used to form a conductive body 131 in the via 121, thereby obtaining a conductive structure 13.

[0079] The method for manufacturing a glass substrate 10 provided in this application involves forming a through hole 111, including a first hole segment 1111 and a second hole segment 1112, on a glass core plate 11. The diameter of the first hole segment 1111 gradually decreases in the direction from the first surface 11a to the second surface 11b, while the diameter of the second hole segment 1112 gradually increases. Thus, when etching the buffer material 12 from the side of the glass core plate 11 near the first surface 11a, the buffer material 12 in the first hole segment 1111 is removed, and a buffer material 12 with a first through hole 1211 can be formed in the second hole segment 1112. After etching the buffer material 12 from the side of the glass core plate 11 near the second surface 11b, a buffer material 12 with a conductive hole 121 is formed within the through hole 111. A conductive structure 13 is formed within the hole 121. The buffer material 12 is then positioned around the conductive structure 13, providing a buffer between the through-hole 111 and the conductive structure 13, reducing the probability of defects such as cracks appearing at the through-hole 111. In summary, this application, by utilizing the diameter variation of the first hole segment 1111 and the second hole segment 1112 to form a buffer material 12 with a conductive hole 121 within the through-hole 111, reduces the difficulty of forming the buffer material 12 with the conductive hole 121 within the through-hole 111, improves the accuracy of forming the buffer material 12 with the conductive hole 121, and utilizes the buffer material 12 to provide a buffer between the hole wall of the through-hole 111 and the conductive structure 13, reducing the probability of defects such as cracks appearing at the through-hole 111, thereby improving the fabrication yield and reliability of the glass substrate 10.

[0080] In one embodiment, see [reference] Figure 2 and Figure 3 As shown, before filling the through hole 111 with buffer material 12 in step S200, the method further includes:

[0081] S200a, a first mask layer 21 is formed on the side of the glass core plate 11 near the first surface 11a, and the first mask layer 21 covers the first surface 11a and the hole wall of the first hole segment 1111.

[0082] Specifically, a first mask layer 21 can be formed on the side of the glass core plate 11 near the first surface 11a using physical vapor deposition (PVD). Since the aperture of the first aperture segment 1111 gradually decreases and the aperture of the second aperture segment 1112 gradually increases in the direction from the first surface 11a to the second surface 11b, when the first mask layer 21 is formed on the side of the glass core plate 11 near the first surface 11a, no masking or patterning processing is required to form the first mask layer 21 covering the first surface 11a and the aperture walls of the first aperture segment 1111. This simplifies the manufacturing process of the first mask layer 21 and improves manufacturing efficiency.

[0083] It is understood that the material forming the first mask layer 21 is not limited. In some embodiments, the first mask layer 21 includes a metallic material, such as titanium. Of course, the method of fabricating the first mask layer 21 can be selected according to the material of the first mask layer 21, and this application does not impose any limitations.

[0084] In one embodiment, see [reference] Figure 2 and Figure 3 As shown, in step S300, the buffer material 12 is etched from the side of the glass core plate 11 near the first surface 11a to remove the buffer material 12 in the first hole segment 1111, and a first through hole 1211 is formed in the buffer material 12 in the second hole segment 1112, including:

[0085] S310. Etch the buffer material 12 from the side of the glass core plate 11 near the first surface 11a to remove the buffer material 12 in the first hole segment 1111 and form a first through hole 1211 in the buffer material 12 in the second hole segment 1112.

[0086] S320, Remove the first mask layer 21.

[0087] In the above process, since a first mask layer 21 is formed on the side of the glass core plate 11 near the first surface 11a, and the first mask layer 21 covers the first surface 11a and the hole wall of the first hole segment 1111, the first mask layer 21 can provide effective protection when the buffer material 12 is etched from the side of the glass core plate 11 near the first surface 11a. This allows the buffer material 12 in the first hole segment 1111 and the buffer material 12 in the middle of the second hole segment 1112 to be etched, while the buffer material 12 in the outer area of ​​the second hole segment 1112 (i.e., the first etched shadow area A) is retained. A buffer material 12 with a first through hole 1211 is formed in the second hole segment 1112.

[0088] Optionally, when the buffer material 12 is a photosensitive material, the buffer material 12 is etched from the side of the glass core plate 11 near the first surface 11a using a photolithography process.

[0089] Specifically, see Figure 2 and Figure 3 As shown, the buffer material 12 is exposed and developed from the side of the glass core plate 11 near the first surface 11a to remove the buffer material 12 in the first hole segment 1111 and form a first through hole 1211 in the buffer material 12 in the second hole segment 1112.

[0090] In some embodiments, the cushioning material 12 may include photosensitive resin, photosensitive polyimide, etc.

[0091] Optionally, see Figure 2 and Figure 3As shown, when the buffer material 12 is a non-photosensitive material, the buffer material 12 is etched from the side of the glass core plate 11 near the first surface 11a using a laser etching process or a plasma dry etching process.

[0092] Specifically, a laser or plasma is used to etch the buffer material 12 from the side of the glass core plate 11 near the first surface 11a, thereby removing the buffer material 12 in the first hole segment 1111 and forming a first through hole 1211 in the buffer material 12 in the second hole segment 1112.

[0093] In some embodiments, the cushioning material 12 includes one of a thermosetting resin (e.g., epoxy resin), a thermoplastic resin (e.g., polyimide), and an Ajinomoto laminate.

[0094] In one embodiment, see [reference] Figure 2 and Figure 3 As shown, before filling the first hole segment 1111 and the first through hole 1211 with buffer material 12, the method further includes:

[0095] S400a, A second mask layer 22 is formed on the side of the glass core plate 11 near the second surface 11b. An opening 221 communicating with the first through hole 1211 is formed on the second mask layer 22. The orthographic projection of the opening 221 on the second surface 11b is located within the orthographic projection range of the first through hole 1211 on the second surface 11b.

[0096] Specifically, a second mask layer 22 with openings 221 can be formed on the side of the glass core plate 11 near the second surface 11b using physical vapor deposition (PVD).

[0097] It is understood that the material forming the second mask layer 22 is not limited. In some embodiments, the second mask layer 22 includes a metallic material, such as titanium. Of course, the method of fabricating the second mask layer 22 can be selected according to the material of the second mask layer 22, and this application does not impose any limitations.

[0098] In one embodiment, see [reference] Figure 2 and Figure 3 As shown, in step S500, the buffer material 12 is etched from the side of the glass core plate 11 near the second surface 11b to remove the buffer material 12 in the first through hole 1211, and a second through hole 1212 is formed in the buffer material 12 in the first hole segment 1111, including:

[0099] S510, from the side of the glass core plate 11 near the second surface 11b, the buffer material 12 is etched through the opening 221 to remove the buffer material 12 in the first through hole 1211, and a second through hole 1212 is formed in the buffer material 12 in the first hole segment 1111. The second through hole 1212 is connected to the first through hole 1211 to form a through hole 121; that is, a through hole 121 is formed in the buffer material 12 that penetrates from the second surface 11b to the first surface 11a.

[0100] S520, Remove the second mask layer 22.

[0101] In the above process, since a second mask layer 22 is formed on the side of the glass core plate 11 near the second surface 11b, and an opening 221 communicating with the first through hole 1211 is formed on the second mask layer 22, the orthogonal projection of the opening 221 on the second surface 11b is within the orthogonal projection range of the first through hole 1211 on the second surface 11b. Therefore, when etching the buffer material 12 from the side of the glass core plate 11 near the second surface 11b, the second mask layer 22 can provide effective protection, forming a through hole 121 penetrating from the second surface 11b to 11a in the buffer material 12. In addition, due to the protective effect of the second mask layer 22, the size of the buffer material 12 retained in the through hole 111 in the direction perpendicular to the thickness of the glass core plate 11 has good uniformity in the same cross section. This can improve the problem of local thinning of the buffer material 12 caused by the offset of the etching position, thereby enabling the buffer material 12 to provide a reliable buffering effect, thereby improving the yield and reliability of the glass substrate 10.

[0102] Optionally, when the buffer material 12 is a photosensitive material, the buffer material 12 is etched from the side of the glass core plate 11 near the second surface 11b using a photolithography process.

[0103] Specifically, see Figure 3 As shown, the buffer material 12 is exposed and developed through the opening 221 from the side of the glass core plate 11 near the second surface 11b, forming a through hole 121 in the buffer material 12 that extends from the second surface 11b to the first surface 11a.

[0104] In some embodiments, the cross-section of the through hole 121 is circular, and the longitudinal section of the through hole 121 may be rectangular. That is, the hole wall of the through hole 121 is parallel to the central axis of the through hole 111, and the hole diameter of the through hole 121 remains unchanged along the thickness direction of the glass core plate 11. Correspondingly, in the direction from the first surface 11a to the second surface 11b, the size of the buffer material 12 in the through hole 111 gradually decreases and then gradually increases along the direction perpendicular to the thickness direction of the glass core plate 11. That is, the closer to the first surface 11a, the larger the first hole segment. The size of the buffer material 12 in the second hole segment 1112 gradually increases along the direction perpendicular to the thickness of the glass core plate 11. As it gets closer to the second surface 11b, the size of the buffer material 12 in the second hole segment 1112 gradually increases along the direction perpendicular to the thickness of the glass core plate 11. This reduces the probability of cracks appearing in the area of ​​the through hole 111 near the surface of the glass core plate 11 (e.g., the first surface 11a and / or the second surface 11b) and at the corner where the through hole 111 connects to the surface of the glass core plate 11, thereby further improving the yield and reliability of the glass substrate 10.

[0105] In some embodiments, since the buffer material 12, which is closer to the light incident direction of the photolithography process, receives more energy exposure, the cross-section of the via 121 is circular after etching, and the longitudinal section of the via 121 is trapezoidal. (See reference...) Figure 6 As shown, the wall of the through hole 121 extends at an angle relative to the central axis of the through hole 111. Specifically, in the direction from the first surface 11a to the second surface 11b, the wall of the through hole 121 extends obliquely away from the central axis of the through hole 111, and the diameter of the through hole gradually increases. Correspondingly, in the direction from the first surface 11a to the second surface 11b, the size of the buffer material 12 in the through hole 111 gradually decreases and then gradually increases along the direction perpendicular to the thickness of the glass core plate 11. That is, the closer to the first surface 11a, the larger the size of the buffer material 12 in the first hole segment 1111 along the direction perpendicular to the thickness of the glass core plate 11; the closer to the second surface 11b, the larger the size of the buffer material 12 in the second hole segment 1112 along the direction perpendicular to the thickness of the glass core plate 11. In this way, the probability of cracks appearing in the area of ​​the through hole 111 near the surface of the glass core plate 11 (e.g., the first surface 11a and / or the second surface 11b) and at the corner where the hole wall of the through hole 111 connects to the surface of the glass core plate 11 can be reduced, thereby further improving the yield and reliability of the glass substrate 10.

[0106] Optionally, see Figure 2 and Figure 3 As shown, when the buffer material 12 is a non-photosensitive material, the buffer material 12 is etched from the side of the glass core plate 11 near the second surface 11b using a laser etching process or a plasma dry etching process.

[0107] Specifically, a laser or plasma is used to etch the buffer material 12 from the side of the glass core plate 11 near the second surface 11b, forming a through hole 121 in the buffer material 12 that extends from the second surface 11b to the first surface 11a.

[0108] In some embodiments, a plasma dry etching process is used to etch the buffer material 12 from the side of the glass core plate 11 near the second surface 11b. After etching is completed, refer to... Figure 4 and Figure 5 As shown, the cross-section of the obtained through hole 121 is circular, and the longitudinal section of the through hole 121 can be rectangular. That is, the hole wall of the through hole 121 is parallel to the central axis of the through hole 111, and the hole diameter of the through hole 121 remains unchanged along the thickness direction of the glass core plate 11. Correspondingly, from the first surface 11a to the second surface 11b, the size of the buffer material 12 in the through hole 111 gradually decreases and then gradually increases along the thickness direction perpendicular to the glass core plate 11. That is, the closer to the first surface 11a, the larger the size of the first hole segment 111. The size of the buffer material 12 in the second hole segment 1112 gradually increases along the direction perpendicular to the thickness of the glass core plate 11. As it gets closer to the second surface 11b, the size of the buffer material 12 in the second hole segment 1112 gradually increases along the direction perpendicular to the thickness of the glass core plate 11. This reduces the probability of cracks appearing in the area of ​​the through hole 111 near the surface of the glass core plate 11 (e.g., the first surface 11a and / or the second surface 11b) and at the corner where the hole wall of the through hole 111 connects to the surface of the glass core plate 11, thereby further improving the yield and reliability of the glass substrate 10.

[0109] In some embodiments, a laser etching process is used to etch the buffer material 12 from the side of the glass core plate 11 near the second surface 11b. Since the buffer material 12 near the laser incident direction will be subjected to more energy ablation, after etching, the cross-section of the via 121 is circular, and the longitudinal section of the via 121 is trapezoidal. (See reference...) Figure 6As shown, the wall of the through hole 121 extends at an angle relative to the central axis of the through hole 111. Specifically, in the direction from the first surface 11a to the second surface 11b, the hole wall of the through hole extends obliquely away from the central axis of the through hole 111, and the diameter of the through hole 121 gradually increases. Correspondingly, in the direction from the first surface 11a to the second surface 11b, the size of the buffer material 12 in the through hole 111 gradually decreases and then gradually increases along the thickness direction perpendicular to the glass core plate 11. That is, the closer to the first surface 11a, the larger the size of the buffer material 12 in the first hole segment 1111 along the thickness direction perpendicular to the glass core plate 11, and the closer to the second surface 11b, the larger the size of the buffer material 12 in the second hole segment 1112 along the thickness direction perpendicular to the glass core plate 11. In this way, the probability of cracks appearing in the area of ​​the through hole 111 near the surface of the glass core plate 11 (e.g., the first surface 11a and / or the second surface 11b) and at the corner where the hole wall of the through hole 111 connects to the surface of the glass core plate 11 can be reduced, thereby further improving the yield and reliability of the glass substrate 10.

[0110] In one embodiment, see [reference] Figure 2 and Figure 3 As shown, after forming the conductive structure 13 within the via 121 in step S600, the method further includes:

[0111] S700, a rewiring structure 14 is formed on the first surface 11a and the second surface 11b respectively. The rewiring structure 14 includes a metal wiring layer 141 and a dielectric layer 142.

[0112] The material of the metal wiring layer 141 includes, but is not limited to, at least one of copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), and titanium (Ti). Methods for forming the metal wiring layer 141 include, but are not limited to, chemical vapor deposition (CVD), physical vapor deposition (PVD), electroless plating, and electroplating.

[0113] Secondly, see Figure 4As shown, this application embodiment provides a glass substrate 10, including a glass core plate 11, a buffer material 12, and a conductive structure 13. The glass core plate 11 includes a first surface 11a and a second surface 11b disposed opposite to each other. A through hole 111 extending from the first surface 11a to the second surface 11b is provided on the glass core plate 11. The through hole 111 includes a first hole segment 1111 and a second hole segment 1112 that are interconnected. From the first surface 11a to the second surface 11b, the diameter of the first hole segment 1111 gradually decreases, and the diameter of the second hole segment 1112 gradually increases. The buffer material 12 is disposed in the through hole 111, and a through hole 121 penetrating from the first surface 11a to the second surface 11b is provided on the buffer material 12. The conductive structure 13 is disposed in the through hole 121. The buffer material 12 is disposed around the conductive structure 13.

[0114] The glass substrate 10 provided in this application embodiment has a through hole 111 on the glass core plate 11, including a first hole segment 1111 and a second hole segment 1112. The diameter of the first hole segment 1111 gradually decreases and the diameter of the second hole segment 1112 gradually increases in the direction from the first surface 11a to the second surface 11b. In this way, a buffer material 12 with a through hole 121 can be formed in the through hole 111 by means of the change in the diameter of the first hole segment 1111 and the second hole segment 1112. This reduces the difficulty of forming the buffer material 12 with a through hole 121 in the through hole 111 and improves the accuracy of forming the buffer material 12 with a through hole 121. The conductive structure 13 is disposed in the through hole 121 and the buffer material 12 is disposed around the conductive structure 13. The buffer material 12 can provide a buffer between the through hole 111 and the conductive structure 13, which can reduce the probability of defects such as cracks appearing at the through hole 111, thereby improving the yield and reliability of the glass substrate 10.

[0115] In one embodiment, see [reference] Figure 4 and Figure 5 As shown, in the direction from the first surface 11a to the second surface 11b, the dimension of the buffer material 12 along the thickness direction perpendicular to the glass core plate 11 first gradually decreases and then gradually increases.

[0116] In other words, the closer to the first surface 11a and the second surface 11b, the larger the dimension of the buffer material 12 along the thickness direction perpendicular to the glass core plate 11. This reduces the probability of cracks appearing in the area where the hole wall of the through hole 111 is close to the surface of the glass core plate 11 (first surface 11a and / or second surface 11b) and at the corner where the hole wall of the through hole 111 connects to the surface of the glass core plate 11, thereby further improving the yield and reliability of the glass substrate 10.

[0117] Optionally, see Figure 4 and Figure 5As shown, the buffer material 12 is symmetrical about the central axis of the through hole 111.

[0118] In this way, the dimensions of the buffer material 12 in the direction perpendicular to the thickness of the glass core plate 11 can be guaranteed to have good uniformity in the same cross section, which improves the problem of reduced reliability of the buffer material 12 due to local thinning of the buffer material 12, so that the buffer material 12 can provide reliable buffering, thereby improving the yield and reliability of the glass substrate 10.

[0119] Optionally, the elastic modulus of the cushioning material 12 is less than or equal to 30 GPa.

[0120] In this way, the buffer material 12 can have a certain degree of flexibility and elasticity, providing reliable buffering between the hole wall of the through hole 111 and the conductive structure 13, thereby reducing the probability of defects such as cracks appearing at the through hole 111, and thus improving the yield and reliability of the glass substrate 10.

[0121] In one embodiment, see [reference] Figure 6 As shown, in the direction from the first surface 11a to the second surface 11b, the hole wall of the through hole 121 extends inclined away from the central axis of the through hole 111, and the diameter of the through hole 121 gradually increases.

[0122] Since the aperture of the first hole segment 1111 gradually decreases and the aperture of the second hole segment 1112 gradually increases in the direction from the first surface 11a to the second surface 11b, and the aperture of the through hole 121 gradually increases in the direction from the first surface 11a to the second surface 11b, the size of the buffer material 12 along the direction perpendicular to the thickness of the glass core plate 11 in the direction from the first surface 11a to the second surface 11b first gradually decreases and then gradually increases. That is, the closer to the first surface 11a and the second surface 11b, the larger the size of the buffer material 12 along the direction perpendicular to the thickness of the glass core plate 11. In this way, the probability of cracks appearing in the area of ​​the hole wall of the through hole 111 close to the surface of the glass core plate 11 (first surface 11a and / or second surface 11b) and at the corner where the hole wall of the through hole 111 connects to the surface of the glass core plate 11 can be reduced, thereby further improving the yield and reliability of the glass substrate 10.

[0123] In one embodiment, see Figure 6 As shown, the longitudinal section of the through hole 121 is hourglass-shaped.

[0124] In another embodiment, see Figure 4 and Figure 5 As shown, the wall of the through hole 121 extends along a direction parallel to the central axis of the through hole 121. In the thickness direction of the glass core plate 11, the diameter of the through hole 121 remains unchanged and is less than or equal to the minimum diameter of the through hole 111.

[0125] In other words, see Figure 4 and Figure 5 As shown, the longitudinal section of the through hole 121 is rectangular, and the cross section of the through hole 121 is circular.

[0126] Since the aperture of the first hole segment 1111 gradually decreases and the aperture of the second hole segment 1112 gradually increases in the direction from the first surface 11a to the second surface 11b, while the aperture of the through hole 121 remains unchanged in the thickness direction of the glass core plate 11, the size of the buffer material 12 in the direction perpendicular to the thickness direction of the glass core plate 11 gradually decreases and then gradually increases in the direction from the first surface 11a to the second surface 11b. That is, the closer to the first surface 11a and the second surface 11b, the larger the size of the buffer material 12 in the direction perpendicular to the thickness direction of the glass core plate 11. This reduces the probability of cracks appearing in the area of ​​the hole wall of the through hole 111 near the surface of the glass core plate 11 (first surface 11a and / or second surface 11b) and at the corner where the hole wall of the through hole 111 connects to the surface of the glass core plate 11, thereby further improving the yield and reliability of the glass substrate 10. In addition, the diameter of the through hole 121 remains unchanged in the thickness direction of the glass core plate 11, thus ensuring the diameter of the conductive structure 13, thereby improving the conductivity of the conductive structure 13 and enhancing the reliability of the glass substrate 10.

[0127] Optionally, see Figure 4 and Figure 5 As shown, the central axis of the through hole 121 coincides with the central axis of the through hole 111.

[0128] In this way, the uniformity of the dimensions of the buffer material 12 in the same cross-section can be ensured in the direction perpendicular to the thickness of the glass core plate 11, which improves the problem of reduced reliability of the buffer material 12 due to local thinning, and enables the buffer material 12 to provide reliable buffering, thereby improving the yield and reliability of the glass substrate 10.

[0129] In one embodiment, see [reference] Figures 4 to 6 As shown, the glass substrate 10 also includes a redistribution structure 14. The first surface 11a and the second surface 11b are both provided with the redistribution structure 14. The redistribution structure 14 includes a metal wiring layer 141 and a dielectric layer 142.

[0130] In one embodiment, see [reference] Figure 5 and Figure 6 As shown, the conductive structure 13 includes a seed layer 132 and a conductive body 131. The conductive body 131 is disposed in the through hole 121, and the seed layer 132 is located between the conductive body 131 and the buffer material 12. The seed layer 132 is disposed around the conductive body 131.

[0131] Thirdly, embodiments of this application provide a packaging structure including a glass substrate fabricated using the method described in the first aspect or the glass substrate described in the second aspect. This improves the reliability of the packaging structure.

[0132] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0133] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for manufacturing a glass substrate, characterized in that, include: A through hole is formed on a glass core board extending from a first surface to a second surface. The through hole includes a first hole segment and a second hole segment that are interconnected. In the direction from the first surface to the second surface, the diameter of the first hole segment gradually decreases, and the diameter of the second hole segment gradually increases. The first surface and the second surface are two opposite surfaces of the glass core board. Fill the through-hole with buffer material; The buffer material is etched from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment and form a first through hole in the buffer material in the second hole segment. Buffer material is filled into the first hole segment and the first through hole; The buffer material is etched from the side of the glass core plate near the second surface to remove the buffer material in the first through hole and form a second through hole in the buffer material in the first hole segment. The second through hole communicates with the first through hole to form a through hole. A conductive structure is formed within the through hole, and the buffer material is disposed around the conductive structure.

2. The method for manufacturing a glass substrate according to claim 1, characterized in that, Prior to the step of filling the through-hole with buffer material, the method further includes: A first mask layer is formed on the side of the glass core plate near the first surface, and the first mask layer covers the first surface and the hole wall of the first hole segment.

3. The method for manufacturing a glass substrate according to claim 2, characterized in that, The step of etching the buffer material from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment and forming a first through hole in the buffer material in the second hole segment includes: The buffer material is etched from the side of the glass core plate near the first surface to remove the buffer material in the first hole segment and form a first through hole in the buffer material in the second hole segment; Remove the first mask layer.

4. The method for manufacturing a glass substrate according to claim 1, characterized in that, Prior to the step of filling the first hole segment and the first through hole with buffer material, the method further includes: A second mask layer is formed on the side of the glass core plate near the second surface, and an opening communicating with the first through hole is formed on the second mask layer; the orthographic projection of the opening on the second surface is located within the orthographic projection range of the first through hole on the second surface; The second mask layer comprises a metallic material.

5. The method for manufacturing a glass substrate according to claim 4, characterized in that, The step of etching the buffer material from the side of the glass core plate near the second surface to remove the buffer material in the first through hole and forming a second through hole in the buffer material in the first hole segment includes: From the side of the glass core plate near the second surface, the buffer material is etched through the opening to form a through hole in the buffer material that extends from the second surface to the first surface; Remove the second mask layer.

6. The method for manufacturing a glass substrate according to claim 1, characterized in that, After forming a conductive structure within the via, the method further includes: A redistribution structure is formed on the first surface and the second surface, the redistribution structure comprising a metal wiring layer and a dielectric layer.

7. A glass substrate, characterized in that, include: A glass core board, comprising a first surface and a second surface disposed opposite to each other, wherein a through hole is provided on the glass core board extending from the first surface to the second surface, the through hole comprising a first hole segment and a second hole segment communicating with each other, wherein in the direction from the first surface to the second surface, the diameter of the first hole segment gradually decreases and the diameter of the second hole segment gradually increases; A buffer material is disposed within the through hole, and the buffer material is provided with a through hole extending from the first surface to the second surface; A conductive structure is disposed within the through hole; the buffer material is disposed around the conductive structure.

8. The glass substrate according to claim 7, characterized in that, In the direction from the first surface to the second surface, the dimension of the cushioning material along the thickness direction perpendicular to the glass core plate first gradually decreases and then gradually increases; The buffer material is symmetrical about the central axis of the through hole; The elastic modulus of the buffer material is less than or equal to 30 GPa.

9. The glass substrate according to claim 7, characterized in that, From the first surface to the second surface, the wall of the through hole extends obliquely away from the central axis of the through hole, and the diameter of the through hole gradually increases; or, The wall of the through hole extends in a direction parallel to the central axis of the through hole; in the thickness direction of the glass core plate, the diameter of the through hole remains unchanged and is less than or equal to the minimum diameter of the through hole.

10. A packaging structure, characterized in that, This includes a glass substrate prepared by the method according to any one of claims 1 to 6 or a glass substrate according to any one of claims 7 to 9.

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