A heat table capable of adjusting wafer corresponding plasma concentration and semiconductor processing equipment

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a hot table capable of adjusting the plasma concentration corresponding to a wafer and a semiconductor processing equipment, which comprises a hot table body, a heat conduction piece and a driving member; the heat conduction piece is movably arranged in a first accommodating groove, and at least a part of the heat conduction piece is arranged in contact with the groove wall of the first accommodating groove; the driving member is arranged in the first accommodating groove and connected with the heat conduction piece, so as to drive the heat conduction piece to make at least one of axial movement, radial movement and circumferential rotation relative to the hot table body with the wafer; the hot table body is arranged to be rotatable, the heat conduction piece is arranged to make at least one of axial movement, radial movement and circumferential rotation relative to the hot table body in the first accommodating groove, the wafer and the rotating hot table body form relative movement, the contact state of each region of the wafer and the different position differential concentration plasma in the reaction chamber can be dynamically adjusted, and the process deviation caused by the uneven spatial distribution of the plasma field can be effectively offset.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and more particularly to a hot stage and semiconductor processing equipment with adjustable wafer-specific plasma concentration. Background Technology

[0002] In semiconductor equipment, the air inlet is typically positioned above the center of the stage. However, the inherent non-uniformity of the electromagnetic field distribution within the cavity leads to uneven plasma concentration distribution along the wafer circumference. This non-uniformity of the plasma field directly affects the consistency of thin film deposition rate and film quality across different regions of the wafer surface, becoming a key limiting factor affecting film uniformity and performance. Summary of the Invention

[0003] This invention relates to a hot stage and semiconductor processing equipment with adjustable wafer-specific plasma concentration, aiming to solve the problem of poor thin film deposition consistency caused by uneven plasma distribution.

[0004] To achieve the above objectives, the present invention provides a hot stage with adjustable wafer-level plasma concentration, comprising: The hot stage body is rotatably disposed in the reaction chamber, and the top of the hot stage body has a first receiving groove. A heat-conducting component is movably disposed within the first receiving groove. The top of the heat-conducting component is used to support the wafer, and at least part of it is in contact with the groove wall of the first receiving groove, so that the heat conduction path between the heat-conducting component and the hot stage body remains conductive. A driving component is disposed in the first receiving groove and connected to the heat-conducting component to drive the heat-conducting component to carry the wafer to perform at least one of axial, radial and circumferential movements relative to the hot stage body, so that the wafer and the rotating hot stage body form relative motion and dynamically adjust the contact between each region of the wafer and the plasma of different concentrations at different positions in the reaction chamber.

[0005] Optionally, the heat-conducting component includes a heat transfer section and a wafer carrier. The first receiving tank includes a movable tank and a heat transfer tank located below the movable tank; The wafer stage is movably disposed on the top of the heat transfer section, and the wafer stage is movably disposed in the movable slot; The heat transfer section is slidably disposed on the heat transfer groove and is at least partially in contact with the side wall of the heat transfer groove.

[0006] Optionally, the driving component further includes an axial driving element; The axial drive is disposed on the bottom wall of the heat transfer tank, and its drive end is connected to the bottom of the heat transfer part to drive the heat transfer part to drive the wafer stage and the wafer to move axially relative to the heat stage body. This is to cooperate with the rotating heat stage body so that each region of the wafer can dynamically contact plasma of different concentrations distributed at different axial positions in the reaction chamber through axial movement relative to the heat stage body.

[0007] Optionally, the driving component further includes a rotary driving component, a radial driving component, and an annular transmission component; The top of the heat transfer section is recessed with a second receiving groove extending circumferentially. The annular transmission component is fixedly disposed at the bottom of the wafer stage and movably inserted into the second receiving groove; Both the rotary drive and the radial drive are located within the second receiving groove to drive the annular transmission to rotate the wafer stage and the wafer relative to the hot stage body in a circumferential and / or radial manner. This allows the wafer and the rotating hot stage body to rotate relative to each other in a dynamic manner, thereby adjusting the contact between different regions of the wafer and plasmas of different concentrations at different circumferential and / or radial positions within the reaction chamber.

[0008] Optionally, the rotary drive includes a first drive unit and a plurality of second drive units; The annular transmission component and the second receiving groove have opposite end faces that form a first mating portion and a second mating portion; The first driving unit is located at the first docking part, and a plurality of second driving units are arranged at intervals along the circumference at the second docking part. The first driving unit and the plurality of second driving units are respectively connected to an independent power supply. By controlling the power on and off of each second driving unit, the first driving unit is attracted and driven to rotate the wafer relative to the hot stage body in a circumferential direction.

[0009] Optionally, the radial drive includes a third drive section and a fourth drive section; The inner diameter of the movable groove is larger than the outer diameter of the wafer stage, and the inner diameter of the second receiving groove is larger than the outer diameter of the annular transmission component. The heat transfer section has a third receiving groove that extends circumferentially recessed into the side wall facing the second receiving groove. The rotating ring of the third driving part is disposed in the third receiving groove; The fourth driving unit is provided in several parts, and the several fourth driving units are arranged circumferentially on the side wall opposite to the third driving unit of the annular transmission member. The third driving unit and the several fourth driving units are respectively connected to an independent power supply. By controlling the power on and off of each fourth driving unit, the third driving unit is attracted and driven to carry the wafer to move radially relative to the hot stage body, so as to cooperate with the rotating hot stage body to drive the wafer to move radially relative to the hot stage body, so that each region of the wafer dynamically contacts plasma of different concentrations.

[0010] Optionally, the adjustable wafer-corresponding plasma concentration hot stage further includes several elastic connectors; One end of each of the elastic connectors is fixedly connected to each of the fourth driving parts, and the other end extends radially and is fixedly connected to the side wall of the third driving part, so as to lengthen or shorten as the annular transmission member moves radially within the second receiving groove.

[0011] Optionally, the adjustable wafer-corresponding plasma concentration hot stage further includes an elastic sealing ring; The inner diameter of the movable groove is larger than the outer diameter of the wafer stage, and a sealing groove extending circumferentially is recessed on the inner sidewall of the movable groove. The elastic sealing ring is fixed on the outer peripheral sidewall of the wafer stage, and at least partially extends into the movable groove. One end of the ring located in the sealing groove slides against the sidewall of the sealing groove, so that the particles generated by the rotational wear of the elastic sealing ring only settle to the bottom wall of the movable groove.

[0012] Optionally, the adjustable wafer-corresponding plasma concentration hot stage further includes a laser heating element; The interior of the heating platform body is provided with a heating and sealing cavity and a liquid flow channel. The liquid flow channel is connected to an external cooling source and is separated from the heating and sealing cavity. Coolant is introduced into the liquid flow channel through the external cooling source to cool the heating platform body. The laser emitting end of the laser heating element is located in the heating and sealing cavity, so as to heat the inner wall of the heating and sealing cavity by emitting laser light and heat the heating stage body through the heating and sealing cavity.

[0013] Optionally, the adjustable wafer-corresponding plasma concentration hot stage further includes a plasma concentration sensor and a control module; Both the plasma concentration sensor and the driving component are connected to the control module. The control module controls the driving component to drive the heat-conducting component to carry the wafer relative to the hot stage body to perform at least one of the following movements: axial movement, radial movement, and circumferential rotation, based on the plasma concentration distribution information collected by the plasma concentration sensor in the reaction chamber.

[0014] Optionally, the adjustable wafer-corresponding plasma concentration hot stage further includes a first hot stage driver; The first hot stage driving member is disposed in the reaction chamber, and its driving end is connected to the hot stage body to drive the hot stage body to move radially within the reaction chamber.

[0015] Optionally, the adjustable wafer-corresponding plasma concentration hot stage further includes a second hot stage driver; The second hot stage drive is located in the reaction chamber, and its drive end is connected to the hot stage body to drive the hot stage body to move axially relative to the reaction chamber.

[0016] To achieve the above objectives, the present invention also provides a semiconductor processing apparatus, including a reaction chamber and a hot stage with adjustable wafer-corresponding plasma concentration disposed within the reaction chamber.

[0017] The beneficial effects of this invention are as follows: This invention, by setting a rotatable hot stage body and matching it with a heat-conducting component that can move relative to the hot stage in at least one of the axial, radial, and circumferential directions within a first receiving groove, enables the wafer and the rotating hot stage body to form relative motion. This allows for dynamic adjustment of the contact state between different regions of the wafer and the plasma of different concentrations at different locations within the reaction chamber, effectively offsetting process deviations caused by uneven spatial distribution of the plasma field, and significantly improving the uniformity of thin film deposition on the wafer surface and the consistency of film quality. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device in some embodiments of the present invention; Figure 2 for Figure 1 An enlarged schematic diagram of the structure at position A is shown below; Figure 3 for Figure 2 An enlarged schematic diagram of the structure at position B is shown.

[0019] Explanation of reference numerals in the attached figures: 1. Reaction chamber; 2. Heating stage body; 21. Heating and sealing cavity; 22. Movable groove; 23. Heat transfer groove; 24. Second receiving groove; 25. Third receiving groove; 3. Wafer stage; 4. Wafer; 5. Elastic sealing ring; 6. Heat transfer part; 7. Axial drive component; 8. Annular transmission component; 9. First drive part; 10. Second drive part; 11. Third drive part; 12. Fourth drive part; 13. Elastic connector; 14. Laser heating component. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0021] This invention relates to a hot stage and semiconductor processing equipment with adjustable wafer-specific plasma concentration, aiming to solve the problem of poor thin film deposition consistency caused by uneven plasma distribution.

[0022] To address the problems existing in the prior art, embodiments of the present invention provide a hot stage with adjustable wafer-level plasma concentration, such as... Figure 1 As shown, the adjustable wafer-corresponding plasma concentration hot stage includes a hot stage body 2, a heat-conducting component, and a driving component.

[0023] In some embodiments, such as Figure 1 and Figure 2 As shown, the hot stage body 2 is rotatably disposed within the reaction chamber 1. Specifically, the hot stage body 2 can be inserted into the bottom plate of the reaction chamber 1, and the bottom of the hot stage body 2 can also be connected to the inner bottom wall of the reaction chamber 1. The rotation of the hot stage body 2 can be achieved by a built-in or external drive motor. The output end of the motor can be connected to the rotating shaft at the bottom of the hot stage body 2 through, but not limited to, a gear set or belt drive mechanism, to drive the hot stage body 2 to rotate uniformly or at variable speed around its own central axis. At the same time, the rotation speed of the hot stage body 2 can be adjusted in real time according to the plasma concentration distribution in the reaction chamber 1. The rotation adjustment of the hot stage body 2 is a macroscopic adjustment of the wafer 4. The top of the hot stage body 2 has a first receiving groove, and the cavity of the first receiving groove has a disc-shaped structure.

[0024] In some embodiments, such as Figure 1 and Figure 2 As shown, the heat-conducting component is movably disposed within the first receiving groove, the top of the heat-conducting component is used to support the wafer 4, and it is at least partially flush with the groove wall of the first receiving groove (in... Figure 2In this embodiment, the contact setting (such as the sidewall of the tank) is designed to keep the heat conduction path between the heat-conducting component and the hot stage body 2 open. This setting retains the ability of the heat-conducting component to move relative to the hot stage body 2, allowing dynamic adjustment of the contact state between different regions of the wafer 4 and plasma of different concentrations, thus solving the problem of film formation consistency caused by uneven plasma distribution. At the same time, the continuous contact with at least part of the tank wall of the first receiving tank ensures the stable openness of the heat conduction path, ensuring that the heating or cooling of the hot stage body 2 can be transferred to the wafer 4.

[0025] In some embodiments, such as Figure 1 and Figure 2 As shown, the driving component is disposed in the first receiving groove and connected to the heat-conducting component, so as to drive the heat-conducting component to carry the wafer 4 to perform at least one of the following movements relative to the hot stage body 2: axial movement, radial movement, and circumferential rotation, so that the wafer 4 and the rotating hot stage body 2 form relative movement, thereby dynamically adjusting the contact between each region of the wafer 4 and the plasma of different concentrations at different positions in the reaction chamber 1.

[0026] Installing the driving component in the first receiving slot eliminates the need for a complex external driving structure within the reaction chamber 1, reducing particulate contamination sources and adapting to the requirements of the vacuum process environment. By driving the heat-conducting component to perform single or combined axial, radial, or circumferential movements, it can form multidimensional relative motion with the rotation of the hot stage body 2, precisely covering the differentiated plasma concentration areas at different axial heights, radial positions, and circumferential positions within the reaction chamber 1. This effectively counteracts process deviations caused by uneven plasma field distribution, significantly improving the plasma contact uniformity across the entire wafer 4, ultimately improving the thickness consistency and film quality of thin film deposition. At the same time, the integrated design also reduces the maintenance difficulty and layout complexity of the equipment.

[0027] It is worth noting that the adjustment of wafer 4 by the driving component is a micro-adjustment relative to the rotation of the hot stage body 2, and the rotation of the hot stage body 2 is continuous during the process, while the adjustment of wafer 4 by the driving component is performed according to demand. This combination of the continuous macroscopic rotation of the hot stage body 2 and the micro-adjustment by the driving component achieves basic uniform flow coverage across the entire wafer 4 by utilizing the uniform rotation of the hot stage body 2 throughout its entire process, thus mitigating the inherent non-uniformity of the plasma field. Simultaneously, the driving component makes precise axial, radial, or circumferential adjustments to address local concentration deviations, balancing the comprehensiveness and specificity of process adjustment. Furthermore, macroscopic adjustment stabilizes the basic process environment, while micro-adjustment is triggered only when needed, avoiding unnecessary energy consumption. This further improves the stability and economy of equipment operation while ensuring the uniformity of plasma contact in all areas of wafer 4.

[0028] In some embodiments, such as Figure 2 and Figure 3 As shown, the heat-conducting component includes a heat transfer section 6 and a wafer stage 3. Both the heat transfer section 6 and the wafer stage 3 have a disk-shaped structure, and the outer diameter of the heat transfer section 6 is smaller than the outer diameter of the wafer stage 3. The structure of the heat transfer section 6 can be, but is not limited to, a solid metal block.

[0029] In some embodiments, such as Figure 2 and Figure 3 As shown, the first receiving groove includes a movable groove 22 and a heat transfer groove 23 located below the movable groove 22; specifically, the groove cavities of the movable groove 22 and the heat transfer groove 23 are both disc-shaped structures; and the inner diameter of the movable groove 22 is larger than the inner diameter of the heat transfer groove 23.

[0030] In some embodiments, such as Figure 2 and Figure 3 As shown, the wafer stage 3 is movably disposed on the top of the heat transfer section 6, and the wafer stage 3 is movably disposed in the movable groove 22; the heat transfer section 6 is slidably disposed in the heat transfer groove 23 and is at least partially in contact with the side wall of the heat transfer groove 23.

[0031] In some embodiments, such as Figure 3 As shown, the driving component further includes an axial driving element 7. The structure of the axial driving element 7 can be a piezoelectric ceramic actuator, a micro servo push rod, or a driving cylinder.

[0032] In some embodiments, such as Figure 3 As shown, the axial drive member 7 is disposed on the bottom wall of the heat transfer tank 23, preferably at the center of the bottom wall of the heat transfer tank 23. The drive end of the axial drive member 7 is connected to the bottom of the heat transfer part 6 (preferably at the center of the bottom) to drive the heat transfer part 6 to drive the wafer stage 3 and the wafer 4 to move axially relative to the hot stage body 2, so as to cooperate with the rotating hot stage body 2 to make each region of the wafer 4 dynamically contact the plasma of different concentrations distributed at different axial positions in the reaction chamber 1 through the axial movement relative to the hot stage body 2.

[0033] The axial drive component 7 is positioned at the center of the bottom of the heat transfer tank 23, with its drive end aligned with the center of the bottom of the heat transfer section 6. This ensures that the lifting and lowering thrust of the axial drive component 7 is evenly applied to the heat transfer section 6, preventing jamming or tilting caused by eccentric force on the heat transfer section 6 and improving the stability of the axial movement of the heat transfer section 6. Relying on the combined motion of the rotation of the hot stage body 2 and the axial lifting and lowering of the wafer 4, the axial height of the wafer 4 can be quickly switched, precisely matching the plasma concentration differences at different axial levels within the reaction chamber 1, further eliminating axial process inhomogeneity.

[0034] In some embodiments, such as Figure 3As shown, the driving component further includes a rotary driving component, a radial driving component, and an annular transmission component 8.

[0035] In some embodiments, such as Figure 3 As shown, the top of the heat transfer section 6 is recessed with a second receiving groove 24 extending circumferentially; the cavity of the second receiving groove 24 is preferably an annular structure.

[0036] In some embodiments, such as Figure 3 As shown, the annular transmission component 8 is fixedly disposed at the bottom of the wafer stage 3 and movably inserted into the second receiving groove 24; the annular transmission component 8 is preferably an annular structure.

[0037] In some embodiments, such as Figure 3 As shown, both the rotary drive and the radial drive are disposed within the second receiving groove 24 to drive the annular transmission 8 to rotate the wafer stage 3 and the wafer 4 relative to the hot stage body 2 in a circumferential and / or radial manner. This can be understood as the wafer 4 being driven to rotate or move radially independently, or simultaneously in both directions. This dynamic adjustment of the contact between different regions of the wafer 4 and the plasma of different concentrations at different circumferential and / or radial positions within the reaction chamber 1 is achieved by allowing the wafer 4 to rotate relative to the rotating hot stage body 2 in a relative rotational and / or radial manner.

[0038] The rotary drive and the radial drive are integrated in the second receiving groove 24, supporting independent or combined control of circumferential rotation and radial movement. This allows for flexible matching of plasma concentration distribution characteristics in different circumferential and radial directions within the reaction chamber 1, and targeted correction of local process deviations. Simultaneously, in conjunction with the continuous rotation of the hot stage body 2, it can comprehensively cover the contact scenarios between different regions of the wafer 4 and plasma at different positions with multi-dimensional relative motion, maximizing the adjustment in different dimensions within a limited structural space, while also taking into account the improvement of adjustment flexibility and film uniformity.

[0039] In some embodiments, such as Figure 3 As shown, the rotary drive includes a first drive unit 9 and several second drive units 10. It is worth noting that the radial dimension of the first drive unit 9 is smaller than the radial dimensions of each of the second drive units 10. By designing the radial dimension of the first drive unit 9 to be smaller than the radial dimensions of each of the second drive units 10, it can be ensured that no matter where the annular transmission member 8 moves radially, the first drive unit 9 is always within the circumferential range of action of the second drive units 10, preventing a drive blind zone due to radial displacement and ensuring the effectiveness of the full stroke of circumferential rotation adjustment. Simultaneously, this dimensional adaptation relationship eliminates the need for additional position calibration structures, simplifying the drive control logic.

[0040] In some embodiments, such as Figure 3As shown, the opposite end faces of the annular transmission member 8 and the second receiving groove 24 form a first docking portion and a second docking portion.

[0041] In some embodiments, such as Figure 3 As shown, the first driving unit 9 is disposed at the first docking portion, and a plurality of second driving units 10 are arranged at circumferential intervals at the second docking portion; preferably, the plurality of second driving units 10 are arranged at equal intervals along the circumferential direction. The first driving unit 9 and the plurality of second driving units 10 are respectively connected to an independent power supply, and by controlling the power on and off of each second driving unit 10, the first driving unit 9 is attracted and driven to rotate the wafer 4 relative to the hot stage body 2.

[0042] The first driving unit 9 and several circumferentially arranged second driving units 10 form an electromagnetic drive cooperation. The precise adjustment of the angle, speed and direction of the circumferential rotation of the wafer 4 can be achieved by independently controlling the on and off of each second driving unit 10. There is no need for contact structures such as mechanical gears and transmission shafts. This avoids particulate matter contamination caused by mechanical wear, which is suitable for the high cleanliness requirements of semiconductor processes. It also greatly simplifies the driving structure and saves the limited space in the second receiving slot 24. At the same time, the control method without mechanical transmission gaps also improves the response speed and accuracy of circumferential adjustment, and flexibly matches the plasma circumferential distribution correction requirements under different processes.

[0043] It is worth noting that the first docking part is the bottom end face of the annular transmission member 8, and the second docking part is the bottom end face of the second receiving groove 24.

[0044] In other embodiments, the first driving part 9 may also be disposed on the inner or outer ring wall of the annular transmission member 8, and the matching second driving part 10 may be disposed on the opposite end face of the inner side wall of the second receiving groove 24.

[0045] In some embodiments, such as Figure 3 As shown, the radial drive unit includes a third drive section 11 and a fourth drive section 12.

[0046] In some embodiments, such as Figure 2 and Figure 3 As shown, the inner diameter of the movable groove 22 is larger than the outer diameter of the wafer stage 3, and the inner diameter of the second receiving groove 24 is larger than the outer diameter of the annular transmission component 8. By reserving radial gaps between the movable groove 22 and the wafer stage 3, and between the second receiving groove 24 and the annular transmission component 8, sufficient space is provided for the radial displacement of the wafer stage 3, ensuring that the radial drive can drive the wafer 4 to cover plasma concentration areas at different radial positions, while avoiding friction and collision between components during movement, reducing particle generation and structural damage.

[0047] In some embodiments, such as Figure 3 As shown, the heat transfer section 6 has a third receiving groove 25 extending circumferentially recessed on the side wall facing the second receiving groove 24; the cavity of the third receiving groove 25 is preferably annular.

[0048] In some embodiments, such as Figure 3 As shown, the third driving part 11 is rotated and disposed in the third receiving groove 25.

[0049] In some embodiments, such as Figure 3 As shown, there are several fourth driving units 12, and these units are arranged circumferentially on the sidewalls of the annular transmission member 8 opposite to the third driving unit 11. The third driving unit 11 and the several fourth driving units 12 are connected to independent power supplies. By controlling the power supply to each fourth driving unit 12, the third driving unit 11 is attracted and driven to move the wafer 4 radially relative to the hot stage body 2. This coordinates with the rotating hot stage body 2 to drive the wafer 4 to move radially relative to the hot stage body 2, so that each region of the wafer 4 dynamically contacts plasma of different concentrations.

[0050] This embodiment utilizes the electromagnetic interaction between the third drive unit 11 and several circumferentially distributed fourth drive units 12. By independently controlling the on / off state of each fourth drive unit 12, the radial displacement direction of the wafer 4 can be precisely adjusted. This eliminates the need for contact transmission structures such as lead screws and guide rails, avoiding particle contamination caused by mechanical friction, thus meeting the high-cleanliness requirements of semiconductor processes. It also saves space occupied by complex transmission mechanisms, fitting the compact layout of the hot stage. Furthermore, the electromagnetic drive offers fast response and high control precision, flexibly matching plasma concentration deviations at different radial positions. Combined with the continuous rotation of the hot stage body 2, it achieves dynamic adaptation of the entire wafer 4 to plasma concentrations of different radial directions, further improving the radial uniformity of thin film deposition.

[0051] In some specific embodiments, the third receiving groove 25 may be disposed on the inner side wall of the second receiving groove 24 near or away from the central axis; the corresponding fourth driving part 12 may be disposed on the inner ring wall of the annular transmission member 8 or on the outer ring wall of the annular transmission member 8.

[0052] In some embodiments, such as Figure 3 As shown, the adjustable wafer corresponding to the plasma concentration hot stage also includes a number of elastic connectors 13; one end of each elastic connector 13 is fixedly connected to each of the fourth driving parts 12, and the other end extends radially and is fixedly connected to the side wall of the third driving part 11, so as to extend or shorten as the annular transmission member 8 moves radially in the second receiving groove 24.

[0053] The fourth drive unit 12 and the third drive unit 11 are flexibly connected by several elastic connectors 13. This allows the fourth drive unit 12 to adapt and expand synchronously with the displacement of the ring transmission component 8 during radial drive, avoiding motion jamming and structural stress caused by rigid connections and ensuring smooth radial adjustment. Furthermore, the elastic force of the fourth drive unit 12 and the third drive unit 11 can provide a reset force for the radial movement of the ring transmission component 8 when the third drive unit 11 and the fourth drive unit 12 are de-energized, eliminating the need for additional reset structures and simplifying the internal layout. At the same time, the elastic connection can buffer the instantaneous impact force during the drive process, reducing component wear and particle generation.

[0054] In some embodiments, such as Figure 2 As shown, the adjustable wafer-corresponding plasma concentration hot stage also includes an elastic sealing ring 5; the elastic sealing ring 5 is preferably, but not limited to, having a ring structure. The material of the elastic sealing ring 5 can be plasma-resistant, highly elastic perfluoroether rubber or silicone rubber, which have excellent resilience properties.

[0055] In some embodiments, such as Figure 2 As shown, the inner diameter of the movable groove 22 is larger than the outer diameter of the wafer stage 3, and a sealing groove extending circumferentially is recessed on the inner sidewall of the movable groove 22; the cavity of the sealing groove is preferably, but not limited to, an annular structure.

[0056] In some embodiments, such as Figure 2 As shown, the elastic sealing ring 5 is fixed on the outer peripheral sidewall of the wafer stage 3, extending at least partially into the movable groove 22. One end of the ring located within the sealing groove slides against the sidewall of the sealing groove, ensuring that particles generated by the rotational wear of the elastic sealing ring 5 only settle towards the bottom wall of the movable groove 22. In this embodiment, the elastic sealing ring 5 forms a dynamic seal between the movable groove 22 and the wafer stage 3. This allows the wafer stage 3 to rotate circumferentially and move radially with the driving component, while effectively preventing process gases, plasma, and byproducts from the reaction chamber 1 from entering the first containment tank, thus avoiding contamination of the driving component. Simultaneously, it restricts wear particles to settling only towards the bottom wall of the movable groove 22, preventing particles from falling upwards onto the wafer 4 surface and causing defects, eliminating the need for additional complex dustproof structures.

[0057] In some embodiments, such as Figure 1 As shown, the adjustable wafer-corresponding plasma concentration hot stage also includes a laser heating element 14.

[0058] In some embodiments, such as Figure 1As shown, the interior of the heating stage body 2 is provided with a heating sealing cavity 21 and a liquid flow channel. The liquid flow channel is connected to an external cooling source and is separated from the heating sealing cavity 21. The liquid flow channel is supplied with coolant through the external cooling source to cool the heating stage body 2. The laser emitting end of the laser heating element 14 is located in the heating sealing cavity 21 to heat the inner wall of the heating sealing cavity 21 by emitting a laser and heat the heating stage body 2 through the heating sealing cavity 21.

[0059] This embodiment adopts an independent dual-loop design for laser heating and liquid cooling. Laser heating achieves non-contact uniform heating of the hot stage body 2 through the heating sealed cavity 21, which has a fast response speed, high temperature control accuracy, and no risk of fluid leakage contaminating the process environment. The liquid flow channel independently undertakes the cooling function and is completely isolated from the heating sealed cavity 21 to avoid mutual interference between hot and cold media. It can quickly and accurately adjust the temperature of the hot stage body 2, taking into account both the high efficiency and stability of heating and cooling.

[0060] In some embodiments, the laser heating element 14 can be a fiber laser or a semiconductor laser, with its laser emitting end passing through the side wall of the heating stage body 2 and entering the heating sealing cavity 21. The laser beam can directly irradiate the inner wall of the heating sealing cavity 21, and uniformly heat the heating stage body 2 through thermal radiation and thermal conduction. This type of laser source has a wavelength that is compatible with the metal absorption band, has high energy conversion efficiency, fast heating response speed, and non-contact heating avoids the local overheating problem of traditional resistance heating.

[0061] In some embodiments, the adjustable wafer-corresponding plasma concentration hot stage further includes a plasma concentration sensor and a control module; the plasma concentration sensor and the driving component are both connected to the control module, and the control module controls the driving component to drive the heat-conducting component to carry the wafer 4 relative to the hot stage body 2 to perform at least one of axial movement, radial movement and circumferential rotation based on the plasma concentration distribution information collected by the plasma concentration sensor in the reaction chamber 1.

[0062] The plasma distribution data in reaction chamber 1 is collected in real time by a plasma concentration sensor. The control module forms a closed-loop control of "sensing, decision-making, and execution". There is no need for manual adjustment of process parameters based on experience. It can automatically match the optimal position of each region of wafer 4 and dynamically correct process deviations caused by uneven concentration. This not only improves the accuracy and response speed of adjustment, but also reduces human operation error. At the same time, it adapts to the plasma distribution characteristics under different process formulations, which greatly improves the consistency of film quality and reduces the output of defective products.

[0063] In some embodiments, the plasma concentration sensor may be a non-invasive optical emission spectroscopy sensor, installed on the side wall of the reaction chamber 1 to collect plasma emission signals at different locations in real time. The control module may be an industrial PLC with integrated PID algorithm or an embedded microcontroller, which are connected by electrical signals. After the plasma concentration sensor feeds back the collected concentration distribution data to the control module, the control module automatically calculates and outputs a drive signal to the drive component to realize real-time closed-loop adjustment of the wafer 4 position.

[0064] In some embodiments, the adjustable wafer-corresponding plasma concentration hot stage further includes a first hot stage driver; the first hot stage driver is disposed in the reaction chamber 1, and its driving end is connected to the hot stage body 2 to drive the hot stage body 2 to move radially within the reaction chamber 1. This configuration, by adding the first hot stage driver to drive the entire hot stage body 2 to move radially within the reaction chamber 1, is equivalent to adding a macroscopic radial adjustment dimension of the hot stage as a whole, based on the multidimensional micro-adjustment of the wafer 4 relative to the hot stage. This can further expand the range of plasma concentrations that can be covered by each region of the wafer 4, and cope with extreme conditions with large radial concentration gradients within the reaction chamber.

[0065] In some embodiments, the first hot stage drive member may be, but is not limited to, a cylinder. The first hot stage drive member may be located outside the reaction chamber 1 or inside the reaction chamber 1.

[0066] In some embodiments, the adjustable wafer-corresponding plasma concentration hot stage further includes a second hot stage driver; the second hot stage driver is disposed in the reaction chamber 1, and its driving end is connected to the hot stage body 2 to drive the hot stage body 2 to move axially relative to the reaction chamber 1. By adding a second hot stage driver to drive the entire hot stage body 2 to move axially within the reaction chamber 1, it is equivalent to further supplementing the macroscopic axial adjustment dimension of the hot stage body 2 on the basis of the micro-adjustment of the wafer 4 relative to the hot stage body 2 and the overall radial adjustment of the hot stage body 2, which can adapt to the plasma concentration distribution characteristics of different axial levels within the reaction chamber 1; at the same time, this independent drive, together with the rotation of the hot stage body 2, the multidimensional movement of the wafer 4, and the radial adjustment of the hot stage body 2, forms a four-level linkage, expanding the plasma area that the wafer 4 can cover on a full spatial scale, further improving the adaptability under different process scenarios, and ensuring the uniformity of film deposition across the entire wafer 4 under various working conditions.

[0067] In some embodiments, the second hot stage drive member may be, but is not limited to, a cylinder. The second hot stage drive member may be located outside the reaction chamber 1 or inside the reaction chamber 1.

[0068] To address the problems existing in the prior art, embodiments of the present invention also provide a semiconductor processing apparatus, such as... Figure 1As shown, the semiconductor processing equipment includes a reaction chamber 1 and a hot stage with adjustable wafer-corresponding plasma concentration disposed within the reaction chamber 1.

[0069] In some embodiments, the semiconductor processing equipment can be a plasma etching equipment, an ashing and resist removal equipment, or a chemical vapor deposition equipment. These types of equipment all rely on the uniformity of plasma concentration distribution within the reaction chamber 1 to ensure process quality. The hot stage of the present invention can dynamically match the contact state between each region of the wafer 4 and the plasma through multi-dimensional relative motion, effectively solving the problems of deviation, residue, or uneven film thickness caused by plasma inhomogeneity during the etching, resist removal, or thin film deposition processes of the above-mentioned equipment, and significantly improving process consistency and yield.

[0070] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A hot stage with adjustable wafer-level plasma concentration, characterized in that, include: The hot stage body is rotatably disposed in the reaction chamber, and the top of the hot stage body has a first receiving groove. A heat-conducting component is movably disposed within the first receiving groove. The top of the heat-conducting component is used to support the wafer, and at least part of it is in contact with the groove wall of the first receiving groove, so that the heat conduction path between the heat-conducting component and the hot stage body remains conductive. A driving component is disposed in the first receiving groove and connected to the heat-conducting component to drive the heat-conducting component to carry the wafer to perform at least one of axial movement, radial movement and circumferential rotation relative to the hot stage body, so that the wafer and the rotating hot stage body form relative motion and dynamically adjust the contact between each region of the wafer and the plasma of different concentrations at different positions in the reaction chamber. The heat-conducting component includes a heat transfer section and a wafer carrier. The first receiving tank includes a movable tank and a heat transfer tank located below the movable tank; The wafer stage is movably disposed on the top of the heat transfer section, and the wafer stage is movably disposed in the movable slot; The heat transfer section is slidably disposed on the heat transfer groove and is at least partially in contact with the side wall of the heat transfer groove. The driving component further includes a rotary driving component, a radial driving component, and a ring transmission component; The top of the heat transfer section is recessed with a second receiving groove extending circumferentially. The annular transmission component is fixedly disposed at the bottom of the wafer stage and movably inserted into the second receiving groove; Both the rotary drive and the radial drive are located within the second receiving groove to drive the annular transmission to rotate the wafer stage and the wafer relative to the hot stage body in a circumferential and / or radial manner. This allows the wafer and the rotating hot stage body to rotate relative to each other in a dynamic manner, thereby adjusting the contact between different regions of the wafer and plasmas of different concentrations at different circumferential and / or radial positions within the reaction chamber.

2. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, The driving component further includes an axial driving element; The axial drive is disposed on the bottom wall of the heat transfer tank, and its drive end is connected to the bottom of the heat transfer part to drive the heat transfer part to drive the wafer stage and the wafer to move axially relative to the heat stage body. This is to cooperate with the rotating heat stage body so that each region of the wafer can dynamically contact plasma of different concentrations distributed at different axial positions in the reaction chamber through axial movement relative to the heat stage body.

3. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, The rotary drive component includes a first drive unit and several second drive units; The annular transmission component and the second receiving groove have opposite end faces that form a first mating portion and a second mating portion; The first driving unit is located at the first docking part, and a plurality of second driving units are arranged at intervals along the circumference at the second docking part. The first driving unit and the plurality of second driving units are respectively connected to an independent power supply. By controlling the power on and off of each second driving unit, the first driving unit is attracted and driven to rotate the wafer relative to the hot stage body in a circumferential direction.

4. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, The radial drive unit includes a third drive section and a fourth drive section; The inner diameter of the movable groove is larger than the outer diameter of the wafer stage, and the inner diameter of the second receiving groove is larger than the outer diameter of the annular transmission component. The heat transfer section has a third receiving groove that extends circumferentially recessed into the side wall facing the second receiving groove. The rotating ring of the third driving part is disposed in the third receiving groove; The fourth driving unit is provided in several parts, and the several fourth driving units are arranged circumferentially on the side wall opposite to the third driving unit of the annular transmission member. The third driving unit and the several fourth driving units are respectively connected to an independent power supply. By controlling the power on and off of each fourth driving unit, the third driving unit is attracted and driven to carry the wafer to move radially relative to the hot stage body, so as to cooperate with the rotating hot stage body to drive the wafer to move radially relative to the hot stage body, so that each region of the wafer dynamically contacts plasma of different concentrations.

5. The adjustable wafer-corresponding plasma concentration hot stage according to claim 4, characterized in that, It also includes several flexible connectors; One end of each of the elastic connectors is fixedly connected to each of the fourth driving parts, and the other end extends radially and is fixedly connected to the side wall of the third driving part, so as to lengthen or shorten as the annular transmission member moves radially within the second receiving groove.

6. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, It also includes elastic sealing rings; The inner diameter of the movable groove is larger than the outer diameter of the wafer stage, and a sealing groove extending circumferentially is recessed on the inner sidewall of the movable groove. The elastic sealing ring is fixed on the outer peripheral sidewall of the wafer stage, and at least partially extends into the movable groove. One end of the ring located in the sealing groove slides against the sidewall of the sealing groove, so that the particles generated by the rotational wear of the elastic sealing ring only settle to the bottom wall of the movable groove.

7. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, It also includes laser heating elements; The interior of the heating platform body is provided with a heating and sealing cavity and a liquid flow channel. The liquid flow channel is connected to an external cooling source and is separated from the heating and sealing cavity. Coolant is introduced into the liquid flow channel through the external cooling source to cool the heating platform body. The laser emitting end of the laser heating element is located in the heating and sealing cavity, so as to heat the inner wall of the heating and sealing cavity by emitting laser light and heat the heating stage body through the heating and sealing cavity.

8. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, It also includes a plasma concentration sensor and a control module; Both the plasma concentration sensor and the driving component are connected to the control module. The control module controls the driving component to drive the heat-conducting component to carry the wafer relative to the hot stage body to perform at least one of the following movements: axial movement, radial movement, and circumferential rotation, based on the plasma concentration distribution information collected by the plasma concentration sensor in the reaction chamber.

9. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, It also includes the first heating stage drive unit; The first hot stage driving member is disposed in the reaction chamber, and its driving end is connected to the hot stage body to drive the hot stage body to move radially within the reaction chamber.

10. The adjustable wafer-corresponding plasma concentration hot stage according to claim 1, characterized in that, It also includes a second heating stage drive unit; The second hot stage drive is located in the reaction chamber, and its drive end is connected to the hot stage body to drive the hot stage body to move axially relative to the reaction chamber.

11. A semiconductor processing apparatus, characterized in that, It includes a reaction chamber and a hot stage with adjustable wafer-corresponding plasma concentration as described in any one of claims 1 to 10, disposed within the reaction chamber.

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