Electron beam evaporation equipment

Abstract

The utility model provides electron beam evaporation equipment. The electron beam evaporation equipment comprises an evaporation equipment body, an electron gun, a bias crucible and a bias device. Wherein the electron gun is used for emitting electron beams; the bias crucible is arranged in the evaporation equipment body; the bias device is connected with the bias crucible and used for providing positive voltage for the bias crucible. According to the scheme provided by the invention, the problem of poor tensile strength of a film structure in a current coating process can be avoided.

Description

Technical Field

[0001] The present disclosure relates to the field of film coating technology, and in particular to an electron beam evaporation device. Background Art

[0002] Electron beam evaporation is a type of physical vapor deposition (PVD) and can be used to deposit various types of thin films. The material to be evaporated is bombarded by an electron beam from a charged tungsten wire. When the electron beam hits the material to be evaporated, the energy of the electron beam is converted into heat energy, causing the material to evaporate and turn into a gaseous state. In a high vacuum chamber, the gaseous evaporation material is then deposited on the surface of the substrate to form a thin film.

[0003] However, during the electron beam evaporation process, when the electron beam bombards the material to be evaporated, it will also stimulate secondary electrons and backscattered electrons. If these secondary electrons and backscattered electrons are deposited on the substrate, static electricity will be generated on the surface of the substrate, causing adsorption wrinkles to appear when the substrate is rolled up. In addition, these secondary electrons and backscattered electrons may also cause thermal damage to the substrate, thereby affecting the tensile strength of the final thin film structure. Utility Model Content

[0004] The purpose of the present disclosure is to provide an electron beam evaporation device that can solve the above-mentioned problems existing in the current coating process.

[0005] The embodiment of the present disclosure provides an electron beam evaporation device for vacuum evaporation of metals, comprising: an evaporation device body; an electron gun configured to emit an electron beam; a bias crucible disposed in the evaporation device body; and a bias device connected to the bias crucible and configured to provide a positive voltage to the bias crucible.

[0006] In some embodiments, the positive voltage provided by the bias device is in the range of 80V to 800V.

[0007] In some embodiments, the biased crucible includes: a crucible body, which is provided with a receiving groove, and an insulating device is provided between the crucible body and the evaporation equipment body; a plating material carrier, which is detachably received in the receiving groove and is configured to receive the metal material to be evaporated.

[0008] In some embodiments, the material of the plating material carrier is graphite, and / or the material of the crucible body is metallic copper.

[0009] In some embodiments, the resistance between the crucible body and the evaporation equipment body is greater than or equal to 0.5 MΩ.

[0010] In some embodiments, the biased crucible further includes: a cooling pipeline, arranged along the surface of the crucible body, configured to provide a cooling liquid flow channel, the cooling pipeline including a liquid inlet and a liquid outlet; a liquid inlet pipe, connected to the liquid inlet, the material of the liquid inlet pipe is rubber; a liquid outlet pipe, connected to the liquid outlet, the material of the liquid outlet pipe is rubber.

[0011] In some embodiments, the biased crucible includes a thermocouple device, and the thermocouple device is integrated on the plating material carrier, wherein the number of the thermocouple devices is N, and 2≤N≤10.

[0012] The present disclosure also provides a film coating method, comprising the following steps:

[0013] Step a, providing a polymer substrate;

[0014] Step b, forming a sputtered metal layer on the surface of the polymer substrate by a magnetron sputtering process;

[0015] Step c, using the electron beam evaporation device to form a evaporated metal layer on the surface of the sputtered metal layer, wherein the evaporated metal layer covers the sputtered metal layer; wherein the metal material to be evaporated is placed in the bias crucible, and a positive voltage is applied to the bias crucible through the bias device during the electron beam evaporation process;

[0016] Wherein, the electron beam evaporation device is the electron beam evaporation device as described in any one of the above items.

[0017] In some embodiments, in step b, the thickness of the sputtered metal layer ranges from 5 nm to 10 nm.

[0018] In some embodiments, in step c, the bias crucible is connected to a positive voltage and is insulated from a body of the electron beam evaporation device, and the positive voltage ranges from 80V to 800V.

[0019] In some embodiments, in step c, forming a evaporated metal layer on the surface of the sputtered metal layer using the electron beam evaporation equipment includes: emitting an electron beam through the electron gun to bombard the metal material to be evaporated in the bias crucible, and the scanning range of the electron beam is equally divided into several segments, and the temperature field distribution of the metal material to be evaporated in the bias crucible is controlled by controlling the residence time of the electron beam in each segment.

[0020] In some embodiments, the scanning range of the electron beam is equally divided into N segments, where N is an integer and 6≤N≤12, and the residence time of the electron beam in each segment is T1, T2, ..., T i ,…,T N-1 ,T N .

[0021] In some embodiments, the polymer substrate is a BOPP substrate, a PET substrate and / or a PI substrate, preferably a PET substrate.

[0022] In some embodiments, the material of the sputtered metal layer is one or more of nickel, copper, chromium, titanium, nickel-chromium alloy, nickel-copper alloy, preferably a NiCr metal layer.

[0023] In some embodiments, the metal material to be evaporated is copper, and the thickness of the evaporated metal layer ranges from 0.8 um to 1.2 um.

[0024] In some embodiments, between step b and step c, the step further includes: pre-melting the metal material to be evaporated in the biased crucible. During the pre-melting stage of the metal to be evaporated in the biased crucible, the electron beam stays in each section for the same time.

[0025] Compared with the related art, the embodiments of the present disclosure have at least the following technical effects:

[0026] The electron beam evaporation equipment provided by the present invention can apply a positive voltage to the bias crucible during the electron beam evaporation process, thereby applying a downward force to the secondary electrons and the scattered electrons, making it difficult for the secondary electrons and the scattered electrons to deposit on the surface of the substrate, thereby avoiding the generation of static electricity on the surface of the substrate due to the large amount of electrons deposited, and further avoiding the occurrence of adsorption wrinkles and deterioration of the winding state during the winding process of the substrate due to the existence of static electricity. It can also avoid thermal damage to the substrate caused by electrons, thereby improving the tensile strength of the finally formed thin film structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0028] Figure 1 A flow chart of a coating method provided for some embodiments of the present disclosure;

[0029] Figure 2 A schematic diagram of the structure of an electron beam evaporation device provided in some embodiments of the present disclosure;

[0030] Figure 3 A schematic diagram of the structure of a bias crucible in an electron beam evaporation device provided in some embodiments of the present disclosure;

[0031] Figure 4A schematic diagram of the structure of a bias crucible in an electron beam evaporation device provided in some embodiments of the present disclosure. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0033] The terms used in the embodiments of the present disclosure are only for the purpose of describing specific embodiments, and are not intended to limit the present disclosure. The singular forms "a", "said" and "the" used in the embodiments of the present disclosure and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings, and "multiple" generally includes at least two.

[0034] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0035] It should be understood that although the terms first, second, third, etc. may be used to describe in the disclosed embodiments, these should not be limited to these terms. These terms are only used to distinguish. For example, without departing from the scope of the disclosed embodiments, the first may also be referred to as the second, and similarly, the second may also be referred to as the first.

[0036] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a product or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such product or device. In the absence of more restrictions, the elements defined by the sentence "comprises a" do not exclude the presence of other identical elements in the product or device including the elements.

[0037] In the related art, the composite current collector is usually a structure similar to a "sandwich", in which the inner layer of the composite current collector is a polymer high molecular layer, and the two sides of the inner layer are covered with metal conductive layers. The preparation method of the composite current collector usually adopts a "two-step method" combining vacuum coating and water electroplating, that is, firstly forming an initial metal film layer by magnetron sputtering, and then thickening the initial metal film layer by water electroplating to form the final metal film layer structure. For example, the current industrial mass production composite current collector coating method uses polypropylene (BOPP) as a substrate, wherein the thickness of the polypropylene substrate is 4.5um, and firstly forms a copper layer with a thickness of about 50nm on each surface of the polypropylene substrate by magnetron sputtering process, and then performs water electroplating on the surface of the copper layer, and thickens the copper layer formed by magnetron sputtering to about 1um, forming a composite copper foil that meets specific conductive requirements.

[0038] However, the above-mentioned "two-step" coating method still has some shortcomings. For example, in the water electroplating process, since water electroplating cannot form a film on a non-conductive or poorly conductive material, the metal layer formed by sputtering is required to have a certain conductivity. In order to improve the conductivity, it is usually necessary to increase the thickness of the metal layer. For example, the prior art requires the use of a sputtering process to deposit a copper layer of at least 50nm and a dielectric layer of a certain thickness. This process is limited by the capacity of the sputtering machine, and the thicker metal layer formed by the sputtering process has a strong stress, which is directly combined with the polymer macromolecular substrate (such as PET, PP), and the bonding force is often poor; and water electroplating mainly forms a film in a solution, and its film-forming waste liquid has a strong pollution to the environment, and the film layer formed by water electroplating has a poor density, which affects the electrical properties of the film layer.

[0039] If electron beam evaporation is used directly, the electron beam will stimulate secondary electrons and backscattered electrons when bombarding the material to be evaporated. If the secondary electrons and backscattered electrons are deposited on the substrate, static electricity will be generated on the surface of the substrate, causing adsorption wrinkles to appear when the substrate is rolled up. In addition, the secondary electrons and backscattered electrons may also cause thermal damage to the substrate, thereby affecting the tensile strength of the final thin film structure.

[0040] The optional embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0041] refer to Figure 1 Some embodiments of the present disclosure provide a coating method, comprising the following steps:

[0042] S10, providing a polymer substrate.

[0043] In some embodiments, the polymer substrate may be a BOPP substrate (Biaxially oriented polypropylene film), a PET substrate (Polyethylene terephthalate) and / or a PI substrate (Polyimide), wherein the PET substrate is preferred. The polymer substrate includes a first surface and a second surface opposite to each other, and metal layers will be formed on the two surfaces respectively later.

[0044] S20, forming a sputtered metal layer on the surface of the polymer substrate by a magnetron sputtering process, wherein the thickness of the sputtered metal layer is in the range of 5 nm to 10 nm.

[0045] The magnetron sputtering process is a type of physical vapor deposition (PVD) and can be used to deposit metal thin films. The working principle of magnetron sputtering is that electrons collide with argon atoms under the action of an electric field, exciting high-energy argon atoms to ionize and then hit the surface of the target material, causing the target material to sputter, and the sputtered particles are deposited on the substrate to form a thin film.

[0046] The sputtered metal layer can be used as a dielectric layer to conduct away the charges of secondary electrons and backscattered electrons generated in the subsequent electron beam evaporation step, thereby preventing the above charges from accumulating on the surface of the substrate. If the sputtered metal layer is not provided, the charges generated in the subsequent steps will accumulate on the surface of the substrate. When the charges accumulate to a certain extent, the substrate will generate static electricity, resulting in mutual attraction between the substrates, and the flattening roller cannot flatten the base film, causing adsorption wrinkles to appear when the substrate is rolled up; at the same time, the statically charged substrate will be adsorbed by the equipment roller system, causing the tension to be unstable during the entire substrate operation process, the winding state to deteriorate, and the substrate operation stability to deteriorate. This embodiment uses the sputtered metal layer to conduct away the charges of secondary electrons and backscattered electrons, thereby avoiding the phenomenon of adsorption wrinkles and deterioration of the winding state when the substrate is rolled up.

[0047] In the subsequent electron beam evaporation process, when the electron beam bombards the material in the crucible, secondary electrons and backscattered electrons will be excited. If these secondary electrons and backscattered electrons are deposited on the substrate (such as BOPP substrate, PET substrate), they will cause thermal damage to the substrate, resulting in a decrease in the tensile strength of the substrate. The embodiment of the present application uses a sputtered metal layer pre-formed on the surface of the substrate to remove the charge of the secondary electrons and backscattered electrons, thereby avoiding the secondary electrons and backscattered electrons from causing thermal damage to the substrate, thereby improving the tensile strength of the composite structure finally formed.

[0048] The sputtered metal layer can also play the role of a dielectric layer or a primer layer to improve the bonding force between the subsequently formed evaporated metal layer and the polymer substrate.

[0049] In some embodiments, the material of the sputtered metal layer can be one or more of nickel, copper, chromium, titanium, nickel-chromium alloy, and nickel-copper alloy, among which a nickel-chromium (NiCr) metal layer is preferred.

[0050] In some embodiments, a magnetron sputtering coating device can be used to form a sputtered metal layer on the surface of the polymer substrate. As a specific example, the magnetron sputtering coating device can be a vacuum magnetron sputtering winding coating device, the polymer substrate is a PET coil, the sputtering target is a nickel-chromium alloy (NiCr), and the parameters in the magnetron sputtering process can be: background vacuum 2.0E-3Pa, ventilation volume 100sccm, process vacuum 2.0E-1Pa, power supply power 10kw, vehicle speed 10m / min, and 5nm NiCr material is sputtered on both sides of the PET coil.

[0051] S30, forming a evaporated metal layer on the surface of the sputtered metal layer by electron beam evaporation process, wherein the evaporated metal layer covers the sputtered metal layer; wherein the metal material to be evaporated is contained in a bias crucible, and a positive voltage is applied to the bias crucible during the electron beam evaporation process.

[0052] Electron beam evaporation is a type of physical vapor deposition (PVD) and can be used to deposit metal thin films. The material to be evaporated is bombarded by an electron beam from a charged tungsten wire. When the electron beam hits the material to be evaporated, the energy of the electron beam is converted into heat energy, causing the material to evaporate and turn into a gaseous state. In a high vacuum chamber, the gaseous evaporation material is then deposited on the surface of the substrate to form a thin film.

[0053] In some embodiments, the bias crucible is applied with a positive voltage during the electron beam evaporation process by connecting the bias crucible to a positive voltage, and the bias crucible needs to be insulated from the electron beam evaporation device body, for example, an insulating device is provided between the bias crucible and the electron beam evaporation device body, and the insulating device material is, for example, ceramic. In some embodiments, the positive voltage ranges from 80V to 800V, preferably 300V to 500V.

[0054] By applying a positive voltage to the bias crucible, the depth of the incident electrons can be increased when the electron beam bombards the material in the bias crucible. In addition, applying a positive voltage to the bias crucible can also exert a downward force on the secondary electrons and backscattered electrons, making it difficult for the secondary electrons and backscattered electrons to deposit on the substrate, thereby avoiding affecting the tensile strength of the substrate.

[0055] In some embodiments, the metal material to be evaporated is copper, and the thickness of the evaporated metal layer ranges from 0.8um to 1.2um, for example, about 1um. The evaporated metal layer formed by electron beam evaporation process has a relatively high film forming temperature, so that the film bonding strength is better.

[0056] In some embodiments, the electron beam evaporation source is a straight gun type electron gun, and the power range of the electron gun is 50kw to 300kw. The power of the electron gun can be controlled to affect the temperature of the metal to be evaporated in the bias crucible, thereby controlling the evaporation rate. The electron gun emits an electron beam to bombard the metal material to be evaporated in the bias crucible, so that the metal material to be evaporated melts into a liquid. By controlling the scanning range of the electron beam, the overall temperature field distribution in the bias crucible can be affected. In order to make the temperature field distribution as uniform as possible, the scanning range of the electron beam is extended to the entire bias crucible as much as possible.

[0057] In some embodiments, the biased crucible further includes: a thermocouple device, which can be integrated on the plating material carrier 132 of the biased crucible 130, wherein the number of the thermocouple devices is N, N is an integer and 2≤N≤10. By setting a plurality of the thermocouple devices, the temperature of a plurality of positions of the plating material carrier 132 can be obtained, so that the temperature of the plating material in the plating material carrier 132 can be monitored. In some embodiments, the plurality of the thermocouple devices are sequentially arranged along the lateral direction (y direction) of the plating material carrier 132, so that the temperature distribution of the plating material in the plating material carrier 132 can be obtained, so that the lateral temperature distribution of the plating material in the plating material carrier 132 can be monitored.

[0058] In some embodiments, the scanning time of the electron gun can be further set according to the temperature monitoring data obtained by the thermocouple device to ensure that the temperature difference in the crucible is within a certain range. The scanning range of the electron beam is divided into several equal sections. The temperature field distribution of the metal material to be evaporated in the biased crucible can be controlled by controlling the residence time of the electron beam in each section to ensure that the temperature difference in the biased crucible is within a certain range, thereby ensuring the uniformity of film formation. Specifically, the scanning range of the electron beam is divided into N equal sections, where N is an integer and 6≤N≤12, and the residence time of the electron beam in each section is T1, T2,…, T i ,…,T N-1 ,T N .

[0059] In some embodiments, before the step of forming the evaporated metal layer on the surface of the sputtered metal layer by using the electron beam evaporation process, the step further includes: pre-melting the metal material to be evaporated in the biased crucible. During the pre-melting stage of the metal to be evaporated in the biased crucible, the electron beam stays in each section for the same time.

[0060] As an example, the scanning range of the electron beam is equally divided into 8 sections. In the pre-melting stage of the copper material in the bias crucible, the residence time ratio of the electron beam in each section is 1:1:1:1:1:1:1:1:1. In the coating stage after the pre-melting is completed, the residence time of the electron gun in each section is set according to the temperature monitoring data obtained by the thermocouple device, so as to control the temperature field distribution of the metal material to be evaporated in the bias crucible, and ensure that the temperature difference in the bias crucible is within a certain range, for example, the temperature difference of the thermocouple device is controlled to be less than 20°C.

[0061] In some embodiments, an electron beam evaporation device can be used to form an evaporated metal layer on the surface of the sputtered metal layer. As a specific example, the electron beam evaporation device can be a vacuum electron gun winding coating device, the metal to be evaporated in the bias crucible is copper, and the background vacuum is 2.0E-3Pa; the copper material in the bias crucible is pre-melted before coating, the electron gun power is set to 60kw, and the scanning program is set to 1 / 1 / 1 / 1 / 1 / 1 / 1 / 1; after the copper material in the bias crucible is pre-melted, the electron gun power is adjusted to 50kw, the scanning program is set to 1.5 / 1.2 / 1 / 1 / 1 / 1 / 1.2 / 1.5, and it works stably for 5min; a 300V forward bias is applied to the bias crucible; the vacuum electron gun winding coating device sets the winding tension to 100N / 100N; the transmission is turned on, the vehicle speed is set to 10m / min, the crucible baffle is turned on, and the baffle opening is 300mm; and normal film formation begins.

[0062] Compared with the prior art, the coating method provided by the present invention can avoid the problem of the current coating process generating waste liquid that is highly polluting to the environment, and a positive voltage can be applied to the bias crucible during the electron beam evaporation process, thereby applying a downward force to the secondary electrons and backscattered electrons, making it difficult for the secondary electrons and backscattered electrons to deposit on the substrate, thereby avoiding the deposition of electrons and affecting the performance of the final composite structure; and, the sputtered metal layer formed by the magnetron sputtering process can lead away the charges of the secondary electrons and backscattered electrons generated in the subsequent electron beam evaporation step, avoiding the secondary electrons and backscattered electrons from causing thermal damage to the substrate, thereby improving the tensile strength of the final composite structure; and, the sputtered metal layer formed by the magnetron sputtering process can also improve the bonding force between the subsequently formed evaporated metal layer and the polymer substrate.

[0063] refer to Figure 2 Some embodiments of the present disclosure provide an electron beam evaporation device 100 for vacuum evaporation of metals. The electron beam evaporation device 100 includes: an evaporation device body 110, an electron gun 120, a bias crucible 130 and a bias device 140.

[0064] The electron gun 120 is used to emit an electron beam. In some embodiments, the electron gun 120 is a straight-gun electron gun, and the power range of the electron gun 120 is 50 kW to 300 kW. The power of the electron gun 120 can be controlled to affect the temperature of the metal to be evaporated in the bias crucible 130, thereby controlling the evaporation rate. The electron gun 120 emits an electron beam to bombard the metal material to be evaporated in the bias crucible 130, so that the metal material to be evaporated melts into a liquid. By controlling the scanning range of the electron beam emitted by the electron gun 120, the overall temperature field distribution in the bias crucible 130 can be affected. In order to make the temperature field distribution as uniform as possible, the scanning range of the electron beam is extended to the entire bias crucible 130 as much as possible.

[0065] In some embodiments, the biased crucible further includes: a thermocouple device, which can be integrated on the plating material carrier 132 of the biased crucible 130, wherein the number of the thermocouple devices is N, N is an integer and 2≤N≤10. By setting a plurality of the thermocouple devices, the temperature of a plurality of positions of the plating material carrier 132 can be obtained, so that the temperature of the plating material in the plating material carrier 132 can be monitored. In some embodiments, the plurality of the thermocouple devices are sequentially arranged along the lateral direction (y direction) of the plating material carrier 132, so that the temperature distribution of the plating material in the plating material carrier 132 can be obtained, so that the lateral temperature distribution of the plating material in the plating material carrier 132 can be monitored.

[0066] In some embodiments, the scanning time of the electron gun can be further set according to the temperature monitoring data obtained by the thermocouple device to ensure that the temperature difference in the crucible is within a certain range. The scanning range of the electron beam is divided into several equal sections. The temperature field distribution of the metal material to be evaporated in the bias crucible 130 can be controlled by controlling the residence time of the electron beam in each section to ensure that the temperature difference in the bias crucible 130 is within a certain range, for example, the temperature difference of the thermocouple device is controlled to be less than 20°C, thereby ensuring the uniformity of film formation. As an example, the scanning range of the electron beam is divided into 8 equal sections. In the pre-melting stage of the copper material in the bias crucible 130, the ratio of the residence time of the electron beam in each section is 1:1:1:1:1:1:1:1. In the coating stage after the pre-melting is completed, the residence time of the electron gun in each section is set according to the temperature monitoring data obtained by the thermocouple device. For example, according to the collected temperature monitoring data, the residence time ratio of the electron beam in each section is set to 1.5:1.2:1:1:1:1:1:1.2:1.5.

[0067] Please join us Figure 2 to Figure 4 The bias crucible 130 is disposed in the evaporation equipment body 110 and is insulated from the evaporation equipment body 110 .

[0068] The bias crucible 130 further includes a crucible body 131 and a plating material carrier 132 .

[0069] The crucible body 131 is provided with a receiving groove 133 for accommodating the plating material carrier 132. An insulating device 134 is provided between the crucible body 131 and the evaporation equipment body 110, and the material of the insulating device 134 is, for example, ceramic. In some embodiments, the evaporation equipment body 110 is provided with a crucible support 135 for supporting the bias crucible 130, and the insulating device 134 is provided at the connection between the crucible body 131 and the crucible support 135. In some embodiments, the resistance between the crucible body 131 and the evaporation equipment body 110 is greater than or equal to 0.5MΩ. In some embodiments, the metal material to be evaporated is copper, and the material of the crucible body 131 is also copper.

[0070] The plating material carrier 132 is detachably received in the receiving groove 133 and is configured to receive the metal material to be evaporated. In some embodiments, the plating material carrier 132 is made of graphite.

[0071] The bias device 140 is connected to the crucible body 131 and is used to provide a positive voltage to the crucible body 131. In some embodiments, the positive voltage provided by the bias device 140 is in the range of 80V to 800V, preferably 300V to 500V. By applying a positive voltage to the bias crucible 130, the depth of the incident electrons can be increased when the electron beam bombards the material in the bias crucible 130. In addition, applying a positive voltage to the bias crucible 130 can also apply a downward force to the secondary electrons and backscattered electrons, making it difficult for the secondary electrons and backscattered electrons to deposit on the substrate, thereby avoiding affecting the tensile strength of the substrate.

[0072] In some embodiments, the biased crucible 130 further includes: a cooling pipeline. The cooling pipeline is arranged along the surface of the crucible body 131 to provide a flow channel for a coolant, and the cooling pipeline further includes a liquid inlet 136 and a liquid outlet 137. The coolant flows into the cooling pipeline through the liquid inlet 136, flows along the cooling pipeline, exchanges heat with the biased crucible 130, and finally flows out from the liquid outlet 137.

[0073] The biased crucible 130 further includes: a liquid inlet pipe 138 and a liquid outlet pipe 139, wherein the liquid inlet pipe 138 is connected to the liquid inlet 136, and the liquid outlet pipe 139 is connected to the liquid outlet. In some embodiments, the liquid inlet pipe 138 and the liquid outlet pipe 139 are made of rubber.

[0074] In some embodiments, the coolant is deionized water. In some embodiments, the resistivity of the coolant is greater than or equal to 18 MΩ. The coolant and the inlet pipe 138 and the outlet pipe 139 in contact with the coolant can all be made of high resistivity materials to ensure insulation between the bias crucible 130 and the evaporation device body 110.

[0075] In some embodiments, the electron beam evaporation device 100 further includes: an unwinding roller 150 and a winding roller 160 .

[0076] In some embodiments, a crucible baffle 170 is further disposed above the bias crucible 130. The crucible baffle 170 can be opened or closed. When electron beam evaporation is performed, the crucible baffle 170 is opened, and the crucible baffle 170 no longer blocks the bias crucible 130, so that the gaseous evaporation material contacts the substrate; when evaporation is not required, the crucible baffle 170 is closed, and the crucible baffle 170 blocks the bias crucible 130, preventing the gaseous evaporation material from contacting the substrate.

[0077] Some embodiments of the present disclosure provide a coating method, referring to Figure 1 , using the aforementioned electron beam evaporation device 100, the coating method comprises the following steps:

[0078] S10, providing a polymer substrate;

[0079] S20, forming a sputtered metal layer on the surface of the polymer substrate by a magnetron sputtering process;

[0080] S30, using the electron beam evaporation equipment 100 to form a evaporated metal layer on the surface of the sputtered metal layer, and the evaporated metal layer covers the sputtered metal layer; wherein the metal material to be evaporated is placed in the bias crucible 130, and a positive voltage is applied to the bias crucible 130 through the bias device during the electron beam evaporation process.

[0081] The present invention will be described in detail below through examples.

[0082] Among them, the thickness of the PET substrate is 6μm, the tensile strength is 300MPa, and the elongation at break is 95%; the thickness of the PI substrate is 7μm, the tensile strength is 205MPa, and the elongation at break is 60%.

[0083] Example 1

[0084] As a specific example, in step S20, the magnetron sputtering process uses a vacuum magnetron sputtering winding coating equipment, the polymer substrate is a PET coil, the sputtering target is a nickel-chromium alloy (NiCr), and the parameters during the magnetron sputtering process are: background vacuum 2.0E-3Pa, air volume 100sccm, process vacuum 2.0E-1Pa, power supply power 10kw, vehicle speed 10m / min, and 5nm NiCr material is sputtered on both sides of the PET coil.

[0085] In step S30, the metal to be evaporated in the bias crucible 130 is copper, and the background vacuum is 2.0E-3Pa; the copper material in the bias crucible 130 is pre-melted before coating, the electron gun power is set to 60kw, and the scanning program is set to a time ratio of 1 / 1 / 1 / 1 / 1 / 1 / 1 / 1; after the copper material in the bias crucible 130 is pre-melted, the electron gun power is adjusted to 50kw; three thermocouple devices are set in the bias crucible 130, and the temperatures are 1233°C, 1309°C, and 12 52℃, the scanning program sets the time ratio as 1.5 / 1.2 / 1 / 1 / 1 / 1 / 1.2 / 1.5, the thermocouple device in the bias crucible 130 displays temperatures of 1257℃, 1301℃ and 1271℃ respectively; a forward bias of 300V is applied to the bias crucible 130; the vacuum electron gun winding coating equipment sets the winding tension to 100N / 100N; the transmission is turned on, the vehicle speed is set to 10m / min, the crucible baffle is turned on, the baffle opening is 300mm, and normal film formation begins.

[0086] Example 2

[0087] As a specific example, in step S20, the magnetron sputtering process adopts vacuum magnetron sputtering winding coating equipment, the polymer substrate is a PET coil, the sputtering target is a nickel-chromium alloy (NiCr), and the parameters in the magnetron sputtering process are: background vacuum 2.0E-3Pa, air volume 100sccm, process vacuum 2.0E-1Pa, power supply power 30kw, vehicle speed 10m / min, and 10nm NiCr material is sputtered on both sides of the PET coil.

[0088] In step S30, the metal to be evaporated in the bias crucible is copper, and the background vacuum is 2.0E-3Pa; the copper material in the bias crucible 130 is pre-melted before coating, and the electron gun power is set to 60kw; the scanning program is set to 1 / 1 / 1 / 1 / 1 / 1 / 1 / 1; after the pre-melting of the copper material in the bias crucible 130 is completed, the electron gun power is adjusted to 80kw; two thermocouple devices are set in the bias crucible 130, and the temperatures are 1243°C and 1278°C respectively, The scanning program set the time ratio to 1.7 / 1.2 / 1 / 1 / 1 / 1 / 1.2 / 1.7, and the thermocouple device in the bias crucible 130 displayed temperatures of 1301°C and 1309°C respectively; a forward bias of 400V was applied to the bias crucible 130; the vacuum electron gun winding coating equipment was set to have a reeling tension of 100N / 100N; the transmission was turned on, the vehicle speed was set to 30m / min, the crucible baffle was turned on, the baffle opening was 300mm, and normal film formation began.

[0089] Example 3

[0090] As a specific example, in step S20, the magnetron sputtering process adopts vacuum magnetron sputtering winding coating equipment, the polymer substrate is Pi coil, the sputtering target material is titanium (Ti), and the parameters in the magnetron sputtering process are: background vacuum 2.0E-3Pa, ventilation volume 100sccm, process vacuum 2.0E-1Pa, power supply power 10kw, vehicle speed 10m / min, and 5nm Ti material is sputtered on both sides of the Pi coil.

[0091] In step S30, the metal to be evaporated in the bias crucible is copper, and the background vacuum is 2.0E-3Pa; the copper material in the bias crucible 130 is pre-melted before coating, and the electron gun power is set to 60kw; the scanning program is set to 1 / 1 / 1 / 1 / 1 / 1 / 1 / 1; after the pre-melting of the copper material in the bias crucible 130 is completed, the electron gun power is adjusted to 65kw; 10 thermocouple devices are set in the bias crucible 130, and the temperatures are 1237°C, 1244°C, 1274°C, 1298°C, 1322°C, 1344°C, 1331°C, 1289°C, 1277°C, 126 1℃, the scanning program sets the time ratio of 1.5 / 1.2 / 1 / 1 / 1 / 1 / 1.2 / 1.5; the thermocouple device in the crucible shows the temperature of 1288℃, 1293℃, 1312℃, 1325℃, 1333℃, 1321℃, 1316℃, 1302℃, 1292℃, 1381℃; 80V positive bias is applied to the bias crucible 130; the vacuum electron gun winding coating equipment sets the winding tension of 100N / 100N; start the transmission, set the speed to 12m / min, open the crucible baffle, the baffle opening is 300mm, and start normal film formation. A 1um thick metal Cu layer is formed on both sides of the Pi coil.

[0092] Example 4

[0093] As a specific example, in step S20, the magnetron sputtering process adopts vacuum magnetron sputtering winding coating equipment, the polymer substrate is a PET coil, the sputtering target is a chromium target (Cr), and the parameters during the magnetron sputtering process are: background vacuum 2.0E-3Pa, air volume 100sccm, process vacuum 2.0E-1Pa, power supply power 10kw, vehicle speed 10m / min, and 10nm Cr material is sputtered on both sides of the PET coil.

[0094] In step S30, the metal to be evaporated in the bias crucible is copper, and the background vacuum is 2.0E-3Pa; the copper material in the bias crucible 130 is pre-melted before coating, and the electron gun power is set to 60kw; after the copper material in the bias crucible 130 is pre-melted, the electron gun power is adjusted to 30kw; three thermocouple devices are set in the bias crucible 130, and the temperatures are 1153℃, 1254℃, and 1142℃ respectively, and the scanning program setting time is 1000℃. Example 2 / 1.5 / 1 / 1 / 1 / 1 / 1.5 / 2; the temperature displayed by the thermocouple device in the bias crucible 130 is 1189℃, 1232℃, and 1203℃ respectively; a 600V forward bias is applied to the bias crucible 130; the vacuum electron gun winding coating equipment is set to a winding tension of 100N / 100N; the transmission is turned on, the vehicle speed is set to 8m / min, the crucible baffle is turned on, the baffle opening is 300mm, and normal film formation begins. A metal Cu layer with a thickness of 1um is formed on both sides of the PET coil.

[0095] Example 5

[0096] As a specific example, in step S20, the magnetron sputtering process adopts vacuum magnetron sputtering winding coating equipment, the polymer substrate is a PET coil, the sputtering target is nickel copper (NiCu), and the parameters during the magnetron sputtering process are: background vacuum 2.0E-3Pa, ventilation volume 100sccm, process vacuum 2.0E-1Pa, power supply power 10kw, vehicle speed 10m / min, and 10nm NiCu material is sputtered on both sides of the PET coil.

[0097] In step S30, the metal to be evaporated in the bias crucible is copper, and the background vacuum is 2.0E-3Pa; the copper material in the bias crucible 130 is pre-melted before coating, and the electron gun power is set to 60kw; after the copper material in the bias crucible 130 is pre-melted, the electron gun power is adjusted to 100kw; three thermocouple devices are set in the bias crucible 130, and the temperatures are 1294℃, 1367℃, and 1318℃ respectively, and the scanning program sets the time ratio 1.5 / 1.2 / 1 / 1 / 1 / 1 / 1.2 / 1.5; the thermocouple in the bias crucible 130 shows temperatures of 1323°C, 1358°C, and 1339°C, respectively; a 500V forward bias is applied to the bias crucible 130; the vacuum electron gun winding coating equipment is set to a winding tension of 100N / 100N; the transmission is turned on, the vehicle speed is set to 50m / min, the crucible baffle is turned on, the baffle opening is 300mm, and normal film formation begins. A 1um thick metal Cu layer is formed on both sides of the PET coil.

[0098] Comparative Example 1

[0099] Compared with the embodiment 1, the difference is that the bias crucible 130 is biased with a positive bias voltage of 0V.

[0100] Comparative Example 2

[0101] Compared with Example 1, the difference is that the scanning curve during the film formation process is set to 1 / 1 / 1 / 1 / 1 / 1 / 1 / 1.

[0102] Comparative Example 3

[0103] Compared with the embodiment 3, the difference is that the bias voltage of the bias crucible 130 is a positive bias voltage of 0V.

[0104] The test data of the above embodiments and comparative examples are shown in Table 1. The test method for square resistance uniformity in the table is as follows: the uniformity measurement area is measured at intervals of 1 cm in the width direction of the base film; square resistance uniformity = ((MAX-MIN) / (MAX+MIN))×100%; the effective area requires square resistance fluctuation ≤10%, product yield = (effective area / width)*100%; tensile strength and elongation at break are measured in accordance with HG / T 2580-2008.

[0105] Table 1

[0106]

[0107] According to the above test results, the following conclusions can be drawn: Based on the data comparison between Example 1 and Comparative Example 1, adding bias to the crucible can effectively slow down the bombardment of secondary electrons on the base film during the film formation process, and improve the tensile strength and elongation at break of the product; Based on the data comparison between Example 1 and Comparative Example 2, the crucible temperature is monitored by a thermocouple device, and real-time scanning parameters can be set according to temperature feedback to perform temperature control, which can effectively improve the uniformity of product square resistance; Based on the data comparison between Example 3 and Comparative Example 3, adding bias to the crucible can effectively improve the tensile strength of the PI substrate.

[0108] Compared with the prior art, the electron beam evaporation method provided by the present invention can avoid the problem of the current coating process producing waste liquid that is highly polluting to the environment, and during the electron beam evaporation process, a positive voltage can be applied to the bias crucible, thereby applying a downward force to the secondary electrons and backscattered electrons, making it difficult for the secondary electrons and backscattered electrons to deposit on the substrate, thereby avoiding affecting the performance of the final composite structure due to the deposition of electrons.

[0109] Finally, it should be noted that: the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0110] The above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. An electron beam evaporation device for vacuum evaporation of metals, characterized in that: include: Evaporation equipment body; an electron gun configured to emit an electron beam; A bias crucible is arranged in the evaporation device body; The bias device is connected to the bias crucible and is configured to provide a positive voltage to the bias crucible.

2. The electron beam evaporation device according to claim 1, characterized in that: The positive voltage provided by the bias device is in the range of 80V to 800V.

3. The electron beam evaporation device according to claim 1, characterized in that: The bias crucible comprises: The crucible body is provided with a containing groove, and an insulating device is provided between the crucible body and the evaporation equipment body; The plating material carrier is detachably accommodated in the accommodating groove and is configured to accommodate the metal material to be evaporated.

4. The electron beam evaporation device according to claim 3, characterized in that: The material of the plating material carrier is graphite, and / or the material of the crucible body is metal copper.

5. The electron beam evaporation device according to claim 3, characterized in that: The resistance between the crucible body and the evaporation equipment body is greater than or equal to 0.5 MΩ.

6. The electron beam evaporation device according to claim 5, characterized in that: The biased crucible further comprises: A cooling pipeline is arranged along the surface of the crucible body and is configured to provide a flow channel for a coolant, wherein the cooling pipeline includes a liquid inlet and a liquid outlet; A liquid inlet pipe connected to the liquid inlet, wherein the material of the liquid inlet pipe is rubber; A liquid outlet pipe is connected to the liquid outlet, and the material of the liquid outlet pipe is rubber.

7. The electron beam evaporation device according to claim 5, characterized in that: The biased crucible also includes: A thermocouple device is integrated on the plating material carrier, wherein the number of the thermocouple devices is N, 2≤N≤10.

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