Atomic layer deposition device

Abstract

The utility model discloses an atomic layer deposition device, and belongs to the technical field of atomic layer deposition. The atomic deposition device comprises a plane sample depositor and a powder sample depositor, the plane sample depositor is provided with a plane sample deposition cavity used for conducting thin film deposition on a plane sample, and the powder sample depositor is provided with a powder sample deposition cavity used for conducting thin film deposition on a powder sample. According to the device, the powder sample and the plane material can be deposited, and the deposition of the powder sample and the deposition of the plane sample are both considered; meanwhile, in the atomic deposition device, the powder sample depositor is located in the plane sample deposition cavity and makes heat conduction contact with the partition plate, the heating device in the heating cavity can heat the plane sample deposition cavity and the powder sample deposition cavity, the structure of the atomic deposition device can be simplified, and the atomic deposition device further has the advantage of being simple in structure.

Description

Technical Field

[0001] The present application belongs to the technical field of atomic layer deposition, and in particular, relates to an atomic layer deposition device. Background Art

[0002] Atomic layer deposition (ALD) is a special chemical vapor deposition thin film technology. It is a thin film method that forms a thin film by alternately introducing a gas-phase precursor into a reaction chamber and causing a gas-curing reaction on the surface of a substrate.

[0003] Conventional atomic layer deposition technology is mostly used on flat samples, such as wafers. With the advancement of technology, atomic layer deposition technology can also be applied to powder samples, such as lithium battery electrode materials, supported catalysts, pharmaceutical preparations, metal powders, etc.

[0004] With the continuous development of atomic layer deposition technology, from the perspective of atomic layer deposition equipment, more and more atomic layer deposition devices are required to meet the requirements of both planar sample deposition and powder sample deposition. However, the atomic layer deposition devices in the related art can only deposit powder samples or planar samples separately, and cannot take into account the deposition of both powder materials and planar materials at the same time. Utility Model Content

[0005] The present application aims to at least to some extent solve the technical problem that the atomic layer deposition device in the related art can only deposit powder samples or plane samples alone. To this end, the present application provides an atomic layer deposition device.

[0006] In a first aspect, an atomic layer deposition device provided in an embodiment of the present application is characterized by comprising:

[0007] A planar sample depositor comprises a shell, a shell cover and a partition, wherein the shell and the shell cover are detachably and hermetically connected, the partition is located in the shell and connected to the shell; the partition, the shell and the shell cover together form a planar sample deposition chamber, and the partition and the shell together form a heating chamber for installing a heating device; a first feed port and a first air extraction port connected to the planar sample deposition chamber are provided on the shell or the shell cover;

[0008] A powder sample depositor is located in the planar sample deposition chamber and is in thermal contact with the partition, wherein the powder sample depositor comprises a powder sample deposition chamber and a second feed port and a second air extraction port communicating with the powder sample deposition chamber;

[0009] The shell or the shell cover is also provided with a third feed port and a third exhaust port connected to the planar sample deposition chamber or the heating chamber; the third feed port and the second feed port are connected through a first connecting pipeline, and the third exhaust port and the second exhaust port are connected through a second connecting pipeline.

[0010] In some embodiments, a mounting groove is provided on the partition, and the powder sample depositor is located in the mounting groove.

[0011] In some embodiments, a limiting structure for limiting the planar sample is also provided on the partition, the atomic layer deposition device is provided with multiple powder sample depositors, the number of the mounting grooves is consistent with the number of the powder sample depositors, and the multiple mounting grooves are arranged around the limiting structure.

[0012] In some embodiments, the partition is a heating partition, and a heating device is also provided on the shell cover.

[0013] In some embodiments, the powder sample depositor includes a shell, a first filter and a second filter, the second feed port and the second air exhaust port are both arranged on the shell, the powder sample deposition chamber is arranged on the shell, the first filter and the second filter are located in the powder sample deposition chamber and are respectively arranged at the second feed port and the second air exhaust port.

[0014] In some embodiments, the second feed port, the first filter screen, the second filter screen and the second air extraction port are arranged sequentially from bottom to top in the height direction.

[0015] In some embodiments, the atomic layer deposition device also includes a first feed pipeline and a second feed pipeline, one end of the first feed pipeline and one end of the second feed pipeline are both connected to the first feed port and the third feed port; the other end of the first feed pipeline and the other end of the second feed pipeline are respectively used to connect with a precursor source and a precursor source; the first feed pipeline is connected to the first feed port side and is provided with a first control valve, and is connected to the third feed port side and is provided with a second control valve; the second feed pipeline is connected to the first feed port side and is provided with a third control valve, and is connected to the third feed port side and is provided with a fourth control valve.

[0016] In some embodiments, two first feed ports are provided, and both of the two first feed ports are provided on the shell and are arranged opposite to each other, and the first feed pipeline and the second feed pipeline are respectively connected to the two first feed ports.

[0017] In some embodiments, flow meters are disposed on both the first feed pipeline and the second feed pipeline.

[0018] In some embodiments, the atomic layer deposition device also includes an exhaust pipeline, one end of which is respectively connected to the first exhaust port and the third exhaust port, and the other end of the exhaust pipeline is used to connect with a vacuum pump. A fifth control valve is arranged on the exhaust pipeline near the first exhaust port, and a sixth control valve is arranged on the exhaust pipeline near the third exhaust port.

[0019] The utility model has at least the following beneficial effects:

[0020] The atomic deposition device provided in the present application includes a planar sample depositor and a powder sample depositor. The planar sample depositor has a planar sample deposition chamber for performing thin film deposition on the planar sample, and the powder sample depositor has a powder sample deposition chamber for performing thin film deposition on the powder sample. The present application can deposit both powder samples and planar materials, taking into account the deposition of both powder samples and planar samples. At the same time, in the present application, the powder sample depositor is located in the planar sample deposition chamber and is in thermal contact with the partition, and the heating device in the heating chamber can heat both the planar sample deposition chamber and the powder sample deposition chamber, which simplifies the structure of the present application. The atomic deposition device of the present application also has the advantage of simple structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following is a brief introduction to the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 A schematic diagram of the structure of an atomic layer deposition device in one or more embodiments of the present application is shown.

[0023] Figure 2 Shows the Figure 1 Schematic diagram of the structure of the mid-plane sample depositor after half-section.

[0024] Figure 3 A schematic structural diagram of a planar sample depositor of an atomic layer deposition device in one or more embodiments of the present application is shown.

[0025] Figure 4 A schematic structural diagram of a powder sample depositor of an atomic layer deposition device in one or more embodiments of the present application is shown.

[0026] Figure numerals: 10-planar sample depositor, 11-shell, 12-shell cover, 13-partition, 131-installation groove, 132-limiting structure, 13a-installation groove, 10a-planar sample deposition chamber, 10b-heating chamber, 10c-first feed port, 10d-first exhaust port, 10e-third feed port, 10f-third exhaust port, 20-powder sample depositor, 20a-powder sample deposition chamber, 20b-second feed port, 20c-second Suction port, 21-housing, 211-first housing, 212-second housing, 22-first filter, 23-second filter, 30-first connecting pipeline, 40-second connecting pipeline, 50-first feed pipeline, 60-second feed pipeline, 70-first control valve, 80-second control valve, 90-third control valve, 100-fourth control valve, 110-flow meter, 120-exhaust pipeline, 130-fifth control valve, 140-sixth control valve. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0028] It should be noted that all directional indications in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0029] In the present invention, unless otherwise clearly specified and limited, the terms "connection", "fixation", etc. should be understood in a broad sense. For example, "fixation" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0030] In addition, in the present utility model, descriptions such as "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present utility model.

[0031] Atomic layer deposition (ALD) is a special chemical vapor deposition thin film technology. It is a thin film method that forms a thin film by alternately introducing a gas-phase precursor into a reaction chamber and causing a gas-curing reaction on the surface of a substrate.

[0032] Conventional atomic layer deposition technology is mostly used on flat samples, such as wafers. With the advancement of technology, atomic layer deposition technology can also be applied to powder samples, such as lithium battery electrode materials, supported catalysts, pharmaceutical preparations, metal powders, etc.

[0033] With the continuous development of atomic layer deposition technology, from the perspective of atomic layer deposition equipment, more and more atomic layer deposition devices are required to meet the requirements of both planar sample deposition and powder sample deposition.

[0034] In the related art, the atomic layer deposition device has the technical problem that it can only deposit powder samples or plane samples alone, and cannot take into account the deposition of powder materials and plane materials at the same time. The embodiment of the present application provides an atomic layer deposition device, which can at least solve the above technical problems to a certain extent.

[0035] The present application is described below with reference to the accompanying drawings and specific embodiments:

[0036] An embodiment of the present application provides an atomic layer deposition device. The atomic layer deposition device provided by the embodiment of the present application can deposit both powder samples and plane samples, and can take into account the deposition of both powder samples and plane samples at the same time.

[0037] like Figure 1 and Figure 2As shown, the atomic layer deposition device of the present application includes a planar sample depositor 10 and a powder sample depositor 20. The planar sample depositor 10 includes a shell 11, a shell cover 12 and a partition 13. The shell 11 and the shell cover 12 are detachably and hermetically connected. The partition 13 is located in the shell 11 and connected to the shell 11; the partition 13, the shell 11 and the shell cover 12 together form a planar sample deposition chamber 10a, and the partition 13 and the shell 11 together form a heating chamber 10b for installing a heating device; the shell 11 or the shell cover 12 is provided with a first feed port 10c and a first exhaust port 10d connected to the planar sample deposition chamber 10a. ; The powder sample depositor 20 is located in the planar sample deposition chamber 10a and is in thermal contact with the partition 13. The powder sample depositor 20 has a powder sample deposition chamber 20a and a second feed port 20b and a second air exhaust port 20c connected to the powder sample deposition chamber 20a. The shell 11 or the shell cover 12 is also provided with a third feed port 10e and a third air exhaust port 10f connected to the planar sample deposition chamber 10a or the heating chamber 10b; the third feed port 10e and the second feed port 20b are connected through a first connecting pipe 30, and the third air exhaust port 10f and the second air exhaust port 20c are connected through a second connecting pipe 40.

[0038] In order to facilitate the understanding of the present application, the principle of atomic layer deposition technology is first introduced: atomic layer deposition technology is implemented in a vacuum environment. During atomic layer deposition, precursor source A and precursor source B are alternately introduced. Specifically, precursor source A is introduced first, and precursor source A will undergo a chemical adsorption reaction with the surface of a flat sample or a powder sample; then precursor source B is introduced, and precursor source B and precursor source A undergo a chemical reaction to form a thin film. In some schemes, after precursor source A is introduced, an inert gas is introduced to purge the remaining unreacted precursor source A; after precursor source B is introduced, an inert gas is introduced to purge the remaining unreacted precursor and by-products. The types and specifications of precursor source A and precursor source B can be selected by the user according to the specific working conditions.

[0039] In the atomic layer deposition device of the present application, the first feed port 10c and the third feed port 10e are used to communicate with the precursor source A and the precursor source B respectively, and the first exhaust port 10d and the third exhaust port 10f are used to communicate with the vacuum pump.

[0040] When the atomic layer deposition device of the present application deposits a planar sample, the planar sample is placed on the partition 13, and then the planar sample deposition chamber 10a is vacuumed through the first vacuum port 10d, and the planar sample deposition chamber 10a is heated by the heating device in the heating chamber 10b. When the temperature of the planar sample deposition chamber 10a is heated to an adaptive temperature, the precursor source A and the precursor source B alternately enter the planar sample deposition chamber 10a through the first feed port 10c to deposit the planar sample.

[0041] Since the third gas pumping port 10f and the second gas pumping port 20c are connected through the second connecting pipe 40, and the third feed port 10e and the second feed port 20b are connected through the first connecting pipe 30, when the atomic layer deposition device of the present application deposits a powder sample, the powder sample is placed in the powder sample deposition chamber 20a, and then the planar sample deposition chamber 10a is vacuumed through the third gas pumping port 10f, and the partition 13 and the planar sample deposition chamber 10a are heated by the heating device in the heating chamber 10b, so as to indirectly heat the powder sample deposition chamber 20a. When the temperature of the powder sample deposition chamber 20a is heated to the adapted temperature, the precursor source A and the precursor source B alternately enter the powder sample deposition chamber 20a through the third feed port 10e to deposit the powder sample.

[0042] In order to ensure the temperature rise rate of the powder sample deposition chamber 20 a , the housing 21 of the powder sample depositor 20 may be made of a material with good thermal conductivity, such as aluminum.

[0043] In the present application, the shell 11 and the shell cover 12 are detachably and hermetically connected, that is, when the shell 11 and the shell cover 12 are connected, the shell 11 and the shell cover 12 are hermetically sealed to ensure the vacuum environment of the planar sample deposition chamber 10a. When depositing a planar sample, the shell cover 12 is disassembled so that the planar sample can be placed on the partition 13 or removed from the partition 13. When depositing a powder material, the shell 11 also needs to be disassembled so that the powder sample can be placed in the powder sample deposition chamber 20a or taken out of the powder sample deposition chamber 20a. The powder sample can be placed in the powder sample deposition chamber 20a or taken out of the powder sample deposition chamber 20a through the second feed port 20b or the second air extraction port 20c.

[0044] In some embodiments, in order to facilitate the placement and removal of powder samples, a powder sample inlet and outlet connected to the powder sample deposition chamber 20a is opened on the powder sample depositor 20, and a detachably connected sealing cover should be provided on the powder sample inlet and outlet so that the powder sample can be placed in the powder sample deposition chamber 20a or taken out from the powder sample deposition chamber 20a; or the powder sample depositor 20 is composed of two detachably connected parts. When it is necessary to add or remove the powder sample, the powder sample depositor 20 is disassembled so that the powder sample can be smoothly added to the powder sample deposition chamber 20a or taken out from the powder sample deposition chamber 20a.

[0045] There are various ways for the powder sample depositor 20 to be in thermal contact with the partition 13: the powder sample depositor 20 can be in direct contact with the partition 13 to achieve direct heat transfer to the powder sample depositor 20; the powder sample depositor 20 and the partition 13 can also be in thermal contact through a thermal pad, a thermal table, etc., which is not limited in this application.

[0046] The heating device in the heating chamber 10b generates heat and transfers the heat to the partition 13, and the partition 13 transfers the heat to the powder sample depositor 20 and the plane sample deposition chamber 10a, thereby heating the powder sample deposition chamber 20a and the plane sample deposition chamber 10a.

[0047] After the atomic layer deposition device of the present application is designed in this way, it can perform deposition processing on both planar samples and powder samples, taking into account the deposition of both powder samples and planar samples, and facilitating the deposition of both powder samples and planar samples; at the same time, after the present application is designed in this way, when the powder samples and the planar samples are deposited, heat is provided by the heating device in the heating chamber 10b, which simplifies the structure of the present application. The atomic layer deposition device of the present application has the advantage of simple structure.

[0048] In order to avoid the powder sample depositor 20 interfering with the planar sample deposition process, in some embodiments, the powder sample depositor 20 is detachably connected to the planar sample deposition chamber 10a, and it can be detachably connected to the partition 13, the shell 11, or the shell cover 12, or in some embodiments, the powder sample depositor 20 is placed on the partition 13; after such a design, when depositing a planar sample, the shell cover 12 can be opened to disassemble the powder sample depositor 20 and take it out of the planar sample deposition chamber 10a to avoid interfering with the planar sample deposition effect; when depositing powder materials, the powder sample depositor 20 is installed in the planar sample deposition chamber 10a. Of course, the powder sample depositor 20 can also be fixed in the planar sample deposition chamber 10a in an undetachable manner, which is not limited in this application.

[0049] In some embodiments, Figure 2 As shown, the partition 13 is provided with a mounting groove 131, and the powder sample depositor 20 is located in the mounting groove 131. With this design, the lower part of the powder sample depositor 20 is located in the mounting groove 131, and the powder sample depositor 20 is installed and limited by the mounting groove 131. When depositing a planar sample, the shell cover 12 is opened and the powder sample depositor 20 is taken out of the limiting groove to avoid the powder sample depositor 20 interfering with the effect of the planar sample deposition.

[0050] In some embodiments, Figure 3As shown, a limiting structure 132 for limiting the position of the planar sample is provided on the partition 13, and the atomic layer deposition device is provided with a plurality of powder sample depositors 20. The number of mounting slots 131 is consistent with the number of powder sample depositors 20, and the plurality of mounting slots 131 are arranged around the limiting structure 132. After such a design, the plurality of atomic layer deposition devices are respectively located in each mounting slot 131, and the limiting structure 132 is arranged around the periphery. The planar sample is positioned and installed on the partition 13 through the mounting slot 131. The plurality of powder sample depositors 20 are arranged to help improve the efficiency of powder sample deposition. The plurality of powder sample depositors 20 are arranged around the periphery of the limiting structure 132, which optimizes the layout of the powder sample depositor 20 and the limiting structure 132, and helps to improve the utilization rate of the planar sample deposition chamber 10a. When depositing a planar sample, the powder sample depositor 20 is removed from the mounting slot 131 to prevent the plurality of powder sample depositors 20 from affecting the distribution of the precursor source A and the precursor source B, thereby ensuring the planar sample deposition effect. The limiting structure 132 can be a limiting protrusion, a limiting groove, etc., which is not limited in this application. Figure 3 As shown, in some embodiments, the limiting structure 132 is a circular limiting groove.

[0051] In some implementations, in order to ensure the heating effect of the atomic layer deposition device of the present application, the partition 13 is a heating partition 13, and a heating device is also provided on the shell cover 12. That is to say, the partition 13 not only serves to divide the planar sample deposition chamber 10a and the heating chamber 10b, but the partition 13 can also be heated. In some embodiments, a heating wire is provided in the partition 13 to achieve heating. By heating the partition 13 and the heating device on the shell 11 to assist the heating device in the heating chamber 10b in heating, the heating rate of the planar sample deposition chamber 10a and the powder sample deposition chamber 20a in the atomic layer deposition device of the present application is improved, which helps to improve the efficiency of atomic layer deposition.

[0052] In some embodiments, Figure 4As shown, the powder sample depositor 20 includes a housing 21, a first filter screen 22 and a second filter screen 23. The second feed port 20b and the second air extraction port 20c are both arranged on the housing 21. The powder sample deposition chamber 20a is arranged on the housing 21. The first filter screen 22 and the second filter screen 23 are located in the powder sample deposition chamber 20a and are respectively arranged at the second feed port 20b and the second air extraction port 20c. When the powder sample is deposited, the precursor source A and the precursor source B enter through the third feed port 10e, enter the first connecting pipeline 30, then enter the second feed port 20b, and then enter the powder sample deposition chamber 20a. The first filter screen 22 filters the precursor source A and the precursor source B entering through the second feed port 20b. The first filter screen 22 also helps to improve the uniformity of the distribution of the precursor source A and the precursor source B. The second filter screen 23 prevents the powder sample from being sucked away from the second air extraction port 20c by the vacuum pump. The mesh sizes of the first filter 22 and the second filter 23 are related to the particle size of the powder sample, and are not limited in this application.

[0053] In some embodiments, the housing 21 includes a first housing 211 and a second housing 212, which are detachably and hermetically connected, and the first housing 211 and the second housing 212 together form a powder sample deposition chamber 20a. The first housing 211 and the second housing 212 are disassembled to add powder samples to the powder sample deposition chamber 20a or to remove powder samples from the powder sample deposition chamber 20a.

[0054] In order to improve the uniformity of powder sample deposition, such as Figure 4 As shown, in some embodiments, the second feed port 20b, the first filter screen 22, the second filter screen 23 and the second air extraction port 20c are sequentially arranged from bottom to top in the height direction. With this design, the precursor source A and the precursor source B entering the second feed port 20b can push the powder sample to tumble and flow in the powder sample deposition chamber 20a and be in a floating state, which helps to ensure the uniformity of the powder sample deposition.

[0055] In order to facilitate the connection between the atomic layer deposition apparatus of the present application and the precursor source, in some embodiments, the atomic layer deposition apparatus also includes a first feed pipeline 50 and a second feed pipeline 60, one end of the first feed pipeline 50 and one end of the second feed pipeline 60 are both connected to the first feed port 10c and the third feed port 10e; the other end of the first feed pipeline 50 and the other end of the second feed pipeline 60 are respectively used to connect with the precursor source A and the precursor source B; the first feed pipeline 50 is connected to the first feed port 10c and is provided with a first control valve 70, and is connected to the third feed port 10e and is provided with a second control valve 80; the second feed pipeline 60 is connected to the first feed port 10c and is provided with a third control valve 90, and is connected to the third feed port 10e and is provided with a fourth control valve 100. When depositing a planar sample, the second control valve 80 and the fourth control valve 100 are closed, and the first control valve 70 and the third control valve 90 are opened alternately, so that the precursor source A and the precursor source B alternately enter the planar sample deposition chamber 10a. When depositing a powder sample, the first control valve 70 and the third control valve 90 are closed, and the second control valve 80 and the fourth control valve 100 are opened alternately, so that the precursor source A and the precursor source B alternately enter the powder sample deposition chamber 20a.

[0056] In order to improve the performance of planar sample deposition, e.g. Figure 2 As shown, in some embodiments, two first feed ports 10c are provided, and the two first feed ports 10c are both provided on the housing 11 and are arranged opposite to each other, and the first feed pipeline 50 and the second feed pipeline 60 are respectively connected to the two first feed ports 10c. That is to say, after the two first feed ports 10c are provided, the first feed pipeline 50 is connected to the precursor source A and one of the first feed ports 10c, and the second pipeline is connected to the precursor source B and the other first feed port 10c. When depositing the planar sample, the precursor source A and the precursor source B enter the planar sample deposition chamber 10a through the two first feed ports 10c respectively.

[0057] In order to ensure the stability of planar material deposition and powder material deposition, in some embodiments, a flow meter 110 is provided on both the first feed pipeline 50 and the second feed pipeline 60. The flow meter 110 accurately reflects the flow of the precursor source A and the precursor source B, and the flow of the precursor source A and the precursor source B is precisely controlled to ensure normal deposition.

[0058] like Figure 2As shown, in some embodiments, the first feed pipeline 50 includes a main road and two branches connected to the main road, the main road is used to communicate with the precursor source A, the two branches are respectively connected to the first feed port 10c and the third feed port 10e, and the flow meter 110 is arranged on the main road of the first feed pipeline 50. In some embodiments, the second feed pipeline 60 also includes a main road and two branches connected to the main road, the main road is used to communicate with the precursor source B, the two branches are respectively connected to the first feed port 10c and the third feed port 10e, and the flow meter 110 is arranged on the main road of the second feed pipeline 60.

[0059] In order to facilitate the connection between the atomic layer deposition device of the present application and the vacuum pump, in some embodiments, the atomic layer deposition device further includes an exhaust pipeline 120, one end of the exhaust pipeline 120 is respectively connected to the first exhaust port 10d and the third exhaust port 10f, the other end of the exhaust pipeline 120 is used to communicate with the vacuum pump, and the exhaust pipeline 120 is provided with a fifth control valve 130 near the first exhaust port 10d, and the exhaust pipeline 120 is provided with a sixth control valve 140 near the third exhaust port 10f. After the exhaust pipeline 120 is designed, the present application can be connected to the vacuum pump through the exhaust pipeline 120, which facilitates the use of the atomic layer deposition device of the present application. The opening and closing of the pipeline connecting the first exhaust port 10d and the third exhaust port 10f is controlled by the fifth control valve 130 and the sixth control valve 140 respectively. When depositing a planar sample, the fifth control valve 130 is opened and the sixth control valve 140 is closed, so that the vacuum pump evacuates the planar sample deposition chamber 10a. When the powder sample is deposited, the sixth control valve 140 is opened and the fifth control valve 130 is closed, so that the vacuum pump evacuates the powder sample deposition chamber 20a.

[0060] like Figure 2 As shown, in some embodiments, the exhaust pipeline 120 includes a main road and two branches connected to the main road, the main road is used to connect to the vacuum pump, the two branches are respectively connected to the first exhaust port 10d and the third exhaust port 10f, the fifth control valve 130 is arranged on the branch connected to the first exhaust port 10d, and the sixth control valve 140 is arranged on the branch connected to the third exhaust port 10f.

[0061] Working principle of the atomic layer deposition device of this application:

[0062] When depositing a planar sample: first, the first feed line 50 is connected to the precursor source A, the second feed line 60 is connected to the precursor source B, and the exhaust line 120 is connected to the vacuum pump; then, the shell cover 12 is opened, the planar sample is placed on the limiting structure 132 on the partition 13, and the shell cover 12 is closed; then, the fifth control valve 130 is opened, the sixth control valve 140 is closed, the first control valve 70, the second control valve 80, the third control valve 90 and the fourth control valve 100 are closed, and at the same time, the vacuum pump, the heating device located in the heating chamber 10b, the heating device on the position shell cover 12, and the heating partition 13 are turned on (to make the heating partition heat up) to heat the planar sample deposition chamber 10a; then, the first control valve 70 and the third control valve 90 are opened alternately in sequence, and the flow meter 110 is observed to timely adjust the opening of the first control valve 70 and the third control valve 90 until the planar sample deposition is completed. After the planar sample is deposited, turn off the vacuum pump, the heating device in the heating chamber 10b, the heating device on the shell cover 12, the heating partition 13, the first control valve 70, the third control valve 90, and the fifth control valve 130, and open the shell cover 12 to take out the planar sample.

[0063] When the powder sample is deposited: first, the first feed line 50 is connected to the precursor source A, the second feed line 60 is connected to the precursor source B, and the exhaust line 120 is connected to the vacuum pump; then, open the shell cover 12, and disassemble the first shell 21 and the second shell 21, place the powder sample in the powder sample deposition chamber 20a, close the shell cover 12 and connect the first shell 21 and the second shell 21; then, close the fifth control valve 130, open the sixth control valve 140, close the first control valve 70, the second control valve 80, the third control valve 90 and the fourth control valve 100, and at the same time start the vacuum pump, the heating device located in the heating chamber 10b, the heating device on the position shell cover 12, and open the heating partition 13 (to make the heating partition heat up) to heat the powder sample deposition chamber 20a; then, alternately open the second control valve 80 and the fourth control valve 100 in turn, and observe the flow meter 110 to timely adjust the opening of the second control valve 80 and the fourth control valve 100 until the powder sample deposition is completed. After the powder sample is deposited, turn off the vacuum pump, the heating device in the heating chamber 10b, the heating device on the shell cover 12, the heating partition 13, the second control valve 80, the fourth control valve 100, and the sixth control valve 140, open the shell cover 12, and disassemble the first shell 21 and the second shell 21 to take out the powder sample from the powder sample deposition chamber 20a.

[0064] To sum up, the atomic layer deposition device of the present application can perform deposition processing on both planar samples and powder samples, taking into account the deposition of both powder samples and planar samples, and facilitating the deposition of both powder samples and planar samples; at the same time, when the present application performs deposition processing on powder samples and planar samples, heat is provided by the heating device in the heating chamber 10b. The present application has a simple structure and is easy to process and manufacture.

[0065] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.

[0066] In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0067] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. An atomic layer deposition device, characterized in that: include: A planar sample depositor (10) comprises a shell (11), a shell cover (12) and a partition (13); the shell (11) and the shell cover (12) are detachably and hermetically connected; the partition (13) is located inside the shell (11) and connected to the shell (11); the partition (13), the shell (11) and the shell cover (12) together form a planar sample depositing chamber (10a); the partition (13) and the shell (11) together form a heating chamber (10b) for installing a heating device; the shell (11) or the shell cover (12) is provided with a first feed port (10c) and a first air extraction port (10d) connected to the planar sample depositing chamber (10a); A powder sample depositor (20) is located in the planar sample deposition chamber (10a) and is in thermal contact with the partition (13), wherein the powder sample depositor (20) comprises a powder sample deposition chamber (20a) and a second feed port (20b) and a second air extraction port (20c) that are in communication with the powder sample deposition chamber (20a); The shell (11) or the shell cover (12) is also provided with a third feed port (10e) and a third gas extraction port (10f) which are connected to the planar sample deposition chamber (10a) or the heating chamber (10b); the third feed port (10e) and the second feed port (20b) are connected via a first connecting pipeline (30), and the third gas extraction port (10f) and the second gas extraction port (20c) are connected via a second connecting pipeline (40).

2. The atomic layer deposition device according to claim 1, characterized in that: The partition plate (13) is provided with a mounting groove (131), and the powder sample depositor (20) is located in the mounting groove (131).

3. The atomic layer deposition device according to claim 2, characterized in that: The partition (13) is also provided with a limiting structure (132) for limiting the plane sample, the atomic layer deposition device is provided with a plurality of powder sample depositors (20), the number of the mounting grooves (131) is consistent with the number of the powder sample depositors (20), and the plurality of mounting grooves (131) are arranged around the limiting structure (132).

4. The atomic layer deposition device according to claim 1, characterized in that: The partition (13) is a heating partition, and the shell cover (12) is also provided with a heating device.

5. The atomic layer deposition device according to any one of claims 1 to 4, characterized in that: The powder sample depositor (20) comprises a housing (21), a first filter screen (22) and a second filter screen (23); the second feed port (20b) and the second air suction port (20c) are both arranged on the housing (21); the powder sample deposition chamber (20a) is arranged on the housing (21); the first filter screen (22) and the second filter screen (23) are located in the powder sample deposition chamber (20a) and are respectively arranged at the second feed port (20b) and the second air suction port (20c).

6. The atomic layer deposition device according to claim 5, characterized in that: The second feed port (20b), the first filter screen (22), the second filter screen (23) and the second air extraction port (20c) are arranged in sequence from bottom to top in the height direction.

7. The atomic layer deposition device according to any one of claims 1 to 4, characterized in that: The atomic layer deposition device further comprises a first feed pipeline (50) and a second feed pipeline (60); one end of the first feed pipeline (50) and one end of the second feed pipeline (60) are both connected to the first feed port (10c) and the third feed port (10e); the other end of the first feed pipeline (50) and the other end of the second feed pipeline (60) are respectively used to be connected to a precursor source A and a precursor source B; a first control valve (70) is provided on the side of the first feed pipeline (50) connected to the first feed port (10c), and a second control valve (80) is provided on the side of the first feed pipeline (50) connected to the third feed port (10e); a third control valve (90) is provided on the side of the second feed pipeline (60) connected to the first feed port (10c), and a fourth control valve (100) is provided on the side of the second feed pipeline (60) connected to the third feed port (10e).

8. The atomic layer deposition device according to claim 7, characterized in that: Two first feed ports (10c) are provided, and the two first feed ports (10c) are both provided on the shell (11) and arranged opposite to each other, and the first feed pipeline (50) and the second feed pipeline (60) are respectively connected to the two first feed ports (10c).

9. The atomic layer deposition device according to claim 7, characterized in that: A flow meter (110) is provided on both the first feed pipeline (50) and the second feed pipeline (60).

10. The atomic layer deposition device according to any one of claims 1 to 4, characterized in that: The atomic layer deposition device further comprises an exhaust pipeline (120), one end of which is respectively connected to the first exhaust port (10d) and the third exhaust port (10f), and the other end of which is used to be connected to a vacuum pump. A fifth control valve (130) is arranged on the exhaust pipeline (120) near the first exhaust port (10d), and a sixth control valve (140) is arranged on the exhaust pipeline (120) near the third exhaust port (10f).

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