Gas dispersion device and thin film growth equipment

Abstract

The utility model provides a gas dispersion device and film growth equipment. The gas dispersion device is suspended above a wafer carrying table used for placing a wafer to be processed and comprises a circular spraying plate and a plurality of circular spraying plates, and all the circular spraying plates are concentric and sequentially arranged on the outer edge of the circular spraying plate in a sleeving mode. The circular spraying plate and each annular spraying plate can move relatively in the direction perpendicular to the wafer carrying table so as to adjust the distance between the corresponding circular spraying plate or annular spraying plate and the wafer carrying table. According to the utility model, the uniformity of the film layer of the wafer at a single position can be adjusted, so that the flatness and uniformity of the film layer on the surface of the wafer to be processed in the technological process can be greatly improved, and the yield of the wafer can be improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, in particular to a gas dispersion device and a thin film growth device. Background Art

[0002] The distance between the gas dispersion device and the carrier of the existing thin film growth equipment is fixed. The distance can only be adjusted by adjusting the carrier up and down as a whole. The uniformity of the wafer film layer at a single position cannot be adjusted. This phenomenon affects the quality of the wafer.

[0003] Please also read Figure 1-2 ,in, Figure 1 is a schematic diagram of the structure of a thin film growth device in the prior art, Figure 2 Schematic diagram of a gas dispersion device in the prior art. Figure 1-2 As shown, the thin film growth device includes: a wafer stage 11 and a gas dispersion device 12. The wafer stage 11 is used to place a wafer 19 to be processed. The gas dispersion device 12 is arranged above the wafer stage 11, and a plurality of gas nozzles 121 are arranged on one side of the gas dispersion device 12 facing the wafer stage 11, for spraying gas to the wafer 19 to be processed.

[0004] Since the distance between the gas dispersion device 12 and the wafer stage 11 is fixed, the distance can only be adjusted by adjusting the wafer stage 11 up and down as a whole, and the uniformity of the wafer film layer at a single position cannot be adjusted.

[0005] Therefore, how to design a gas dispersion device to adjust the uniformity of a wafer film layer at a single location is a key issue that needs to be solved urgently by those skilled in the art. Summary of the invention

[0006] The technical problem to be solved by the utility model is to provide a gas dispersion device and a thin film growth device, which can adjust the uniformity of the wafer film layer at a single position, thereby helping to improve the yield rate of the wafer.

[0007] In order to solve the above problems, the utility model provides a gas dispersion device, which is suspended above a wafer carrier for placing wafers to be processed; it includes: a circular spray plate; and a plurality of annular spray plates, all of which are concentric and sequentially arranged on the outer edge of the circular spray plate; the circular spray plate and all of the annular spray plates are provided with a plurality of gas nozzles for spraying gas on one side facing the wafer carrier, and the circular spray plate and each of the annular spray plates can move relative to each other in a direction perpendicular to the wafer carrier to adjust the distance between the corresponding circular spray plate or the annular spray plate and the wafer carrier.

[0008] In some embodiments, the circular spray plate and each of the annular spray plates are connected to a retractable screw rod, and the retractable screw rod can be retracted in a direction perpendicular to the wafer carrier to perform corresponding spacing adjustment.

[0009] In some embodiments, the number of the annular spray plates is 5 to 10.

[0010] In some embodiments, all of the gas nozzles are arranged in a circumferential shape on the surface of the circular spray plate and the annular spray plate.

[0011] In some embodiments, all the gas nozzles on the circular spray plate and each of the annular spray plates are evenly distributed.

[0012] In some embodiments, the aperture of the gas nozzle gradually increases from the center of the circular spray plate outward.

[0013] In order to solve the above problems, the utility model also provides a thin film growth device, including: a wafer carrier for placing the wafer to be processed; a gas dispersion device suspended above the wafer carrier, the gas dispersion device including: a circular spray plate and a plurality of annular spray plates, all of the annular spray plates are concentric and sequentially arranged on the outer edge of the circular spray plate; the circular spray plate and all of the annular spray plates are provided with a plurality of gas nozzles for spraying gas on one side facing the wafer carrier, the circular spray plate and each of the annular spray plates can move relative to each other in a direction perpendicular to the wafer carrier to adjust the distance between the corresponding circular spray plate or the annular spray plate and the wafer carrier.

[0014] In some embodiments, the circular spray plate and each of the annular spray plates are connected to a retractable screw, which can be retracted in a direction perpendicular to the wafer carrier to adjust the distance between the corresponding circular spray plate or the annular spray plate and the wafer carrier.

[0015] In some embodiments, all the gas nozzles on the circular spray plate and each of the annular spray plates are evenly distributed.

[0016] In some embodiments, the aperture of the gas nozzle gradually increases from the center of the circular spray plate outward.

[0017] The utility model sets the gas dispersion device to include a circular spray plate and a plurality of annular spray plates, and all the annular spray plates are concentric and sequentially sleeved on the outer edge of the circular spray plate, and the circular spray plate and each of the annular spray plates can move relative to each other in a direction perpendicular to the wafer stage to adjust the distance between the corresponding circular spray plate or the annular spray plate and the wafer stage, thereby adjusting the uniformity of the wafer film layer at a single position. Since the uniformity of the wafer film layer at a single position can be adjusted, the utility model can greatly improve the flatness and uniformity of the film layer on the surface of the wafer to be processed in the process flow, which is conducive to improving the yield rate of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the specific implementation of the utility model, the following is a brief introduction to the drawings required for the description of the specific implementation. Obviously, the drawings described below are only some specific implementations of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 It is a schematic diagram of the structure of a thin film growth device in the prior art;

[0020] Figure 2 It is a bottom view schematic diagram of a gas dispersion device in the prior art;

[0021] Figure 3 It is a structural schematic diagram of a thin film growth device provided by an embodiment of the utility model;

[0022] Figure 4 This is a schematic diagram of the use state of a thin film growth device provided by an embodiment of the utility model;

[0023] Figure 5 This is a schematic diagram of a thin film growth device in use provided by another embodiment of the utility model;

[0024] Figure 6 It is a bottom view schematic diagram of a gas dispersion device provided by one embodiment of the utility model;

[0025] Figure 7 It is a bottom view schematic diagram of a gas dispersion device provided by another embodiment of the utility model. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the specific implementation of the utility model to clearly and completely describe the technical solutions in the specific implementation of the utility model. Obviously, the specific implementation described is only a part of the specific implementation of the utility model, not all of the specific implementation. Based on the specific implementation of the utility model, all other specific implementations obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0027] Please also read Figure 3 to Figure 7 ,in, Figure 3 It is a structural schematic diagram of a thin film growth device provided by an embodiment of the utility model. Figure 4 This is a schematic diagram of the use state of a thin film growth device provided by an embodiment of the utility model. Figure 5 is a schematic diagram of the use state of a thin film growth device provided by another embodiment of the utility model, Figure 6 is a bottom view schematic diagram of a gas dispersion device provided by an embodiment of the utility model, Figure 7 It is a bottom view schematic diagram of a gas dispersion device provided by another embodiment of the utility model.

[0028] like Figure 3 to Figure 7 As shown, the gas dispersion device is suspended above a wafer stage 31 for placing a wafer 39 to be processed, and the gas dispersion device includes: a circular spray plate 30 and a plurality of annular spray plates 32. All the annular spray plates 32 are concentric and sequentially sleeved on the outer edge of the circular spray plate 30. The circular spray plate 30 and all the annular spray plates 32 are provided with a plurality of gas nozzles 321 for spraying gas on one side facing the wafer stage 31; the circular spray plate 30 and each of the annular spray plates 32 can move relative to each other in a direction perpendicular to the wafer stage 31 (in the D1 direction shown in the figure) to adjust the distance between the corresponding circular spray plate 30 or the annular spray plate 32 and the wafer stage 31.

[0029] The gas dispersion device can disperse the gas by spraying it through the gas nozzle 321. The circular spray plate 30 and / or the annular spray plate 32 can be relatively moved in a direction perpendicular to the wafer stage 31 to adjust the spacing, so that the gas nozzle 321 can evenly spray the gas on the surface of the wafer 39 to be processed, thereby avoiding the uneven surface film treatment of the wafer 39 to be processed during the process, thereby avoiding affecting the yield rate of the wafer 39 to be processed, improving the wafer production capacity, and further simplifying the process steps in the processing process.

[0030] like Figure 3As shown, in this embodiment, the circular spray plate 30 and each of the annular spray plates 32 are connected to a retractable screw 33, and the retractable screw 33 can be retracted in a direction perpendicular to the wafer stage 31 to adjust the corresponding spacing. Specifically, the retractable screw 33 protrudes from the surface of the circular spray plate 30 and the annular spray plate 32 on one side facing away from the wafer stage 31. By setting the retractable screw 33, the staff can control the retractable screw 33 to retract in a direction perpendicular to the wafer stage 31 according to specific process requirements, thereby adjusting the spacing between the corresponding circular spray plate 30 or the annular spray plate 32 and the wafer stage 31, so that the surface of the wafer 39 to be processed can form a film layer with good uniformity and high flatness. Specifically, when the surface film layer of the wafer to be processed 39 is unevenly formed, the length of the retractable screw 33 can be adjusted according to the specific situation to control the relative distance between the corresponding circular spray plate 30 or the annular spray plate 32 and the wafer carrier 31, so as to perform gas spraying on the uneven position of the film layer of the wafer to be processed 39 to further form a film layer with good uniformity.

[0031] In a direction perpendicular to the wafer stage 31, the retractable screw 33 can control the circular spray plate 30 and the annular spray plate 32 to move toward the wafer stage 31 to adjust the corresponding spacing. The spacing between the components of the gas dispersion device and the wafer stage 31 can be gradually increased from the circular spray plate 30 to the outside, such as Figure 4 The spacing between the components of the gas dispersion device and the wafer carrier 31 can also be gradually reduced from the circular spray plate 30 outward, such as Figure 5 It should be noted that the distances between the circular spray plate 30 and the annular spray plate 32 and the wafer stage 31 can be adjusted individually to facilitate the formation of a film layer with good uniformity.

[0032] In some embodiments, the number of the annular spray plates 32 is 5 to 10, for example, 5, 6, 7, 8, 9, or 10. In this embodiment, the number of the annular spray plates 32 is 5. In other embodiments, different numbers of the annular spray plates 32 may be provided according to specific process requirements to better form a uniform film layer on the surface 39 of the wafer to be processed.

[0033] like Figure 6As shown, in this embodiment, all the gas nozzles 321 are arranged in a circumferential shape on the surface of the circular spray plate 30 and the annular spray plate 32. In this embodiment, the diameter of the gas nozzle 321 can be set to 3mm to 6mm, and the gas nozzle 321 is arranged in a circumferential shape on the surface of the circular spray plate 30 and each of the annular spray plates 32 facing the wafer 39 to be processed, so that the gas can be evenly sprayed to the wafer 39 to be processed through the gas nozzle 321.

[0034] In this embodiment, all the gas nozzles 321 on the circular spray plate 30 and each of the annular spray plates 32 are evenly distributed. The gas nozzles 321 are evenly arranged on the surface of the circular spray plate 30 and each of the annular spray plates 32 facing the wafer 39 to be processed, so that the gas is evenly sprayed toward the wafer 39 to be processed through the gas nozzles 321.

[0035] like Figure 7 As shown, in this embodiment, the aperture of the gas nozzle 321 gradually increases from the center of the circular spray plate 30 outward. Among them, the aperture of the gas nozzle 321 in the outermost layer is the largest, and the aperture of the gas nozzle 321 in the innermost layer is the smallest. The aperture of the gas nozzle 321 of the circular spray plate 30 where the gas spraying device is located in the innermost layer is set to the smallest to reduce the gas spraying amount, and the aperture of the gas nozzle 321 of the annular spray plate 32 in the outermost layer is set to the largest to increase the gas spraying amount, so that the size of the gas spraying amount of the gas nozzle 321 at different positions can be controlled, and the uniform flatness of the film layer formed on the surface of the wafer 39 to be processed can be ensured.

[0036] Based on the same inventive concept, the utility model also provides a thin film growth device, which includes a wafer stage and a gas dispersion device, wherein the gas dispersion device adopts the above-mentioned gas dispersion device of the utility model.

[0037] like Figure 3 to Figure 7As shown, the wafer stage 31 is used to place the wafer 39 to be processed. The gas dispersion device is suspended above the wafer stage 31 for placing the wafer 39 to be processed, and the gas dispersion device includes: a circular spray plate 30 and a plurality of annular spray plates 32. All the annular spray plates 32 are concentric and sequentially sleeved on the outer edge of the circular spray plate 30. The circular spray plate 30 and all the annular spray plates 32 are provided with a plurality of gas nozzles 321 for spraying gas on the side facing the wafer stage 31; the circular spray plate 30 and each of the annular spray plates 32 can move relative to each other in a direction perpendicular to the wafer stage 31 (the D1 direction shown in the figure) to adjust the distance between the corresponding circular spray plate 30 or the annular spray plate 32 and the wafer stage 31.

[0038] like Figure 3 As shown, in this embodiment, the circular spray plate 30 and each of the annular spray plates 32 are connected to a retractable screw 33, and the retractable screw 33 can be retracted in a direction perpendicular to the wafer stage 31 to adjust the corresponding spacing. Specifically, the retractable screw 33 protrudes from the surface of the circular spray plate 30 and the annular spray plate 32 on one side facing away from the wafer stage 31. By setting the retractable screw 33, the staff can control the retractable screw 33 to retract in a direction perpendicular to the wafer stage 31 according to specific process requirements, thereby adjusting the spacing between the corresponding circular spray plate 30 or the annular spray plate 32 and the wafer stage 31, so that the surface of the wafer 39 to be processed can form a film layer with good uniformity and high flatness. Specifically, when the surface film layer of the wafer to be processed 39 is unevenly formed, the length of the retractable screw 33 can be adjusted according to the specific situation to control the relative distance between the corresponding circular spray plate 30 or the annular spray plate 32 and the wafer carrier 31, so as to perform gas spraying on the uneven position of the film layer of the wafer to be processed 39 to further form a film layer with good uniformity.

[0039] In a direction perpendicular to the wafer stage 31, the retractable screw 33 can control the circular spray plate 30 and the annular spray plate 32 to move toward the wafer stage 31 to adjust the corresponding spacing. The spacing between the components of the gas dispersion device and the wafer stage 31 can be gradually increased from the circular spray plate 30 to the outside, such as Figure 4 The spacing between the components of the gas dispersion device and the wafer carrier 31 can also be gradually reduced from the circular spray plate 30 outward, such as Figure 5It should be noted that the distances between the circular spray plate 30 and the annular spray plate 32 and the wafer stage 31 can be adjusted individually to facilitate the formation of a film layer with good uniformity.

[0040] In some embodiments, the number of the annular spray plates 32 is 5 to 10, for example, 5, 6, 7, 8, 9, or 10. In this embodiment, the number of the annular spray plates 32 is 5. In other embodiments, different numbers of the annular spray plates 32 may be provided according to specific process requirements to better form a uniform film layer on the surface 39 of the wafer to be processed.

[0041] like Figure 6 As shown, in this embodiment, all the gas nozzles 321 are arranged in a circumferential shape on the surface of the circular spray plate 30 and the annular spray plate 32. In this embodiment, the diameter of the gas nozzle 321 can be set to 3mm to 6mm, and the gas nozzle 321 is arranged in a circumferential shape on the surface of the circular spray plate 30 and each of the annular spray plates 32 facing the wafer 39 to be processed, so that the gas can be evenly sprayed to the wafer 39 to be processed through the gas nozzle 321.

[0042] In this embodiment, all the gas nozzles 321 on the circular spray plate 30 and each of the annular spray plates 32 are evenly distributed. The gas nozzles 321 are evenly arranged on the surface of the circular spray plate 30 and each of the annular spray plates 32 facing the wafer 39 to be processed, so that the gas is evenly sprayed toward the wafer 39 to be processed through the gas nozzles 321.

[0043] like Figure 7 As shown, in this embodiment, the aperture of the gas nozzle 321 gradually increases from the center of the circular spray plate 30 outward. Among them, the aperture of the gas nozzle 321 in the outermost layer is the largest, and the aperture of the gas nozzle 321 in the innermost layer is the smallest. The aperture of the gas nozzle 321 of the circular spray plate 30 where the gas spraying device is located in the innermost layer is set to the smallest to reduce the gas spraying amount, and the aperture of the gas nozzle 321 of the annular spray plate 32 in the outermost layer is set to the largest to increase the gas spraying amount, so that the size of the gas spraying amount of the gas nozzle 321 at different positions can be controlled, and the uniform flatness of the film layer formed on the surface of the wafer 39 to be processed can be ensured.

[0044] The above technical solution is to set the gas dispersion device as a plurality of concentric and sequentially arranged annular spray plates, each of which can move relative to the direction perpendicular to the wafer stage to adjust the distance between the annular spray plate and the wafer stage, so as to adjust the uniformity of the wafer film layer at a single position. Since the uniformity of the wafer film layer at a single position can be adjusted, the utility model can greatly improve the flatness and uniformity of the film layer on the surface of the wafer to be processed in the process flow, which is conducive to improving the yield rate of the wafer.

[0045] It should be noted that references in the specification to "an embodiment", "an embodiment", "an exemplary embodiment", "some embodiments", etc. indicate that the described embodiment may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases do not necessarily refer to the same embodiment. In addition, when a particular feature, structure, or characteristic is described in conjunction with an embodiment, whether or not explicitly described, it is within the knowledge of a technician in the relevant art to implement such feature, structure, or characteristic in conjunction with other embodiments.

[0046] Typically, a term can be understood at least in part from usage in context. For example, the term "one or more" as used herein depends at least in part on the context and can be used to describe any feature, structure or characteristic in a singular sense, or can be used to describe a combination of features, structures or features in a plural sense. Similarly, terms such as "one", "a" or "the" can also be understood to express singular usage or to express plural usage, depending at least in part on the context. In addition, the term "based on" can be understood to not necessarily be intended to express a set of exclusive factors, but can alternatively, also at least in part depending on the context, allow for the presence of other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected / coupled" refers not only to the direct coupling of one component to another component, but also to the indirect coupling of one component to another component through an intermediate component.

[0047] It should be noted that the terms "including" and "having" and their variations involved in the documents of the present utility model are intended to cover non-exclusive inclusions. The terms "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. Unless the context clearly indicates otherwise, it should be understood that the data used in this way can be interchanged under appropriate circumstances. In addition, the embodiments of the present utility model and the features in the embodiments can be combined with each other unless there is a conflict. In addition, in the above description, the description of well-known components and technologies is omitted to avoid unnecessary confusion of the concepts of the present utility model. In the above-mentioned embodiments, each embodiment focuses on the differences from other embodiments, and the same / similar parts between the embodiments can be referred to each other.

[0048] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A gas dispersion device, suspended above a wafer stage for placing a wafer to be processed; characterized in that: The gas dispersion device comprises: Circular spray plates; and A plurality of annular spray plates, all of which are concentric and sequentially sleeved on the outer edge of the circular spray plate; The circular spray plate and all the annular spray plates are provided with a plurality of gas nozzles for spraying gas on one side facing the wafer carrier, and the circular spray plate and each of the annular spray plates can move relative to each other in a direction perpendicular to the wafer carrier to adjust the distance between the corresponding circular spray plate or the annular spray plate and the wafer carrier.

2. The gas dispersion device according to claim 1, characterized in that: The circular spray plate and each of the annular spray plates are connected to a retractable screw rod, and the retractable screw rod can be retracted in a direction perpendicular to the wafer carrier to adjust the corresponding spacing.

3. The gas dispersion device according to claim 1, characterized in that: The number of the annular spray plates is 5 to 10.

4. The gas dispersion device according to claim 1, characterized in that: All the gas nozzles are arranged in a circumferential shape on the surface of the circular spray plate and the annular spray plate.

5. The gas dispersion device according to claim 1, characterized in that: All the gas nozzles on the circular spray plate and each of the annular spray plates are evenly distributed.

6. The gas dispersion device according to claim 1, characterized in that: The aperture of the gas nozzle increases gradually from the center of the circular spray plate toward the outside.

7. A thin film growth device, characterized in that: include: Wafer stage, used to place the wafer to be processed; A gas dispersion device is suspended above the wafer stage, and the gas dispersion device includes: a circular spray plate and a plurality of annular spray plates, all of which are concentric and sequentially sleeved on the outer edge of the circular spray plate; The circular spray plate and all the annular spray plates are provided with a plurality of gas nozzles for spraying gas on one side facing the wafer carrier, and the circular spray plate and each of the annular spray plates can move relative to each other in a direction perpendicular to the wafer carrier to adjust the distance between the corresponding circular spray plate or the annular spray plate and the wafer carrier.

8. The thin film growth device according to claim 7, characterized in that: The circular spray plate and each of the annular spray plates are connected to a retractable screw, which can be retracted in a direction perpendicular to the wafer carrier to adjust the distance between the corresponding circular spray plate or the annular spray plate and the wafer carrier.

9. The thin film growth device according to claim 7, characterized in that: All the gas nozzles on the circular spray plate and each of the annular spray plates are evenly distributed.

10. The thin film growth device according to claim 7, characterized in that: The aperture of the gas nozzle increases gradually from the center of the circular spray plate toward the outside.

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