Crucible device and crystal growth equipment
By using heat-concentrating components to focus heat during SiC crystal growth, the problem of isothermal shape instability caused by the temperature gradient of the crystal surface is solved, and high-quality growth of the crystal is achieved.
Patent Information
- Application Number
- CN202420306180.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-19
- Publication Date
- 2024-12-17
- Estimated Expiration
- 2034-02-19
AI Technical Summary
During SiC crystal growth, there is a large temperature gradient on the surface of the crystal, resulting in a concave or convex shape of the isothermal line, which reduces the crystal quality.
A crucible device including a heating crucible, a raw material crucible and a heat-collecting component is designed. By setting a heat-collecting component between the heating crucible and the raw material crucible, the heat is focused to the preset height of the raw material crucible, and a temperature gradually decreases upward in an axial direction is formed. Distribute, maintaining the isothermal straight or slightly convex shape at the front of crystal growth.
It effectively reduces crystal defects, promotes stable growth of crystal level or micro-convex equal diameters, and improves crystal quality.
Smart Images
Figure CN222182545U_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of semiconductor material preparation, and in particular to a crucible device and a crystal growth equipment. Background Art
[0002] Silicon carbide (SiC) is considered to be a wide bandgap semiconductor substrate material that can greatly improve the performance of power electronic devices. In particular, as major new energy vehicle companies apply SiC-based MOSFET modules to new energy vehicles, the application prospects of SiC substrate materials have received more extensive attention. There are three main methods for preparing automotive-grade silicon carbide crystals: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD), and top seeded solution growth (TSSG). Among them, the PVT method for growing SiC crystals has the advantages of simple equipment, easy control, few defects, and low operating costs, and has become the main method for large-scale production of silicon carbide crystals.
[0003] The basic principle of preparing SiC crystals by PVT method is: in a three-high graphite crucible or tantalum crucible or tantalum carbide crucible, the SiC raw material at the bottom is sublimated and decomposed into carbon- and silicon-containing gas phase components such as SiC, Si2C and SiC2 at high temperature and low pressure. Under the action of temperature gradient, these sublimated and decomposed gas phase components move from high temperature area (raw material area) to low temperature area (seed crystal area) and crystallize on the surface of seed crystal, which promotes the growth of SiC crystal, thereby growing large-sized SiC crystal. During the growth process of SiC crystal, there is a large temperature gradient on the surface of the crystal, which will make the isotherm shape near the crystal more concave or convex, making the crystal growth surface more concave or convex, thereby reducing the quality of the crystal.
[0004] Therefore, how to provide a crucible device and a crystal growth equipment that can keep the isotherm of the crystal growth front straight or slightly convex for a long time during the crystal growth process is an urgent problem to be solved. Utility Model Content
[0005] A technical problem to be solved by the present disclosure is that during the growth of SiC crystals, there is a large temperature gradient on the surface of the crystal, which will make the isotherms near the crystal more concave or convex, making the crystal growth surface more concave or convex, thereby reducing the quality of the crystal.
[0006] To solve the above technical problems, the first embodiment of the present disclosure provides a crucible device, which includes: a heating crucible, which has a first accommodating cavity; a raw material crucible, whose outer diameter is smaller than the inner diameter of the heating crucible, the raw material crucible is arranged in the first accommodating cavity and is coaxial with the heating crucible; and a heat collecting component, which is arranged between the heating crucible and the raw material crucible, and the heat collecting component is provided with a first cavity recessed along the radial direction near the inner circumference of the raw material crucible, which is used to focus the heat of the heating crucible to a preset height of the second accommodating cavity of the raw material crucible; wherein the preset height is lower than the top height of the second accommodating cavity.
[0007] In some embodiments, the crucible device also includes: a relay crucible, which has a third accommodating cavity that penetrates axially, the relay crucible is movably connected to the top of the raw material crucible, and the inner ring of the relay crucible is provided with a guide ring platform, and the inner diameter of the guide ring platform is smaller than the inner diameter of the raw material crucible.
[0008] In some embodiments, a contraction section is provided at the bottom of the guide ring, and the inner diameter of the contraction section gradually decreases from the bottom to the top of the relay crucible.
[0009] In some embodiments, the crucible device further includes: a crucible cover, which is movably connected to the top of the relay crucible and forms a sealed space with the raw material crucible and the relay crucible. The crucible cover has a growth surface opposite to the second accommodating cavity for the growth of seed crystals.
[0010] In some embodiments, the crucible device further includes: a heat insulating component filling a gap between the relay crucible and the heating crucible.
[0011] In some embodiments, the growth surface is provided with a boss extending along the crucible cover toward the second accommodating cavity and extending to the third accommodating cavity.
[0012] In some embodiments, the crucible device further includes: a guide ring, which is disposed in an annular positioning groove on the top of the guide ring platform, and the height of the guide ring extends axially to the growth surface of the crucible cover.
[0013] In some embodiments, an annular cavity is provided between the outer peripheral surface of the guide ring opposite to the boss and the inner peripheral surface of the relay crucible.
[0014] In some embodiments, the crucible device further includes: a bonding layer disposed on the surface of the boss.
[0015] Embodiment 2 of the present disclosure provides a crystal growth device, which includes: a crucible device; an insulating felt, which is arranged on the outside of the crucible device and is used to wrap the crucible device; and a heating device, which is arranged on the outside of the insulating felt and is used to heat the insulating felt to heat the crucible device.
[0016] Through the above technical scheme, a crucible device provided by the present disclosure has at least the following advantages: the crucible device includes a heating crucible, a raw material crucible and a heat collecting component, and the heat collecting component is arranged between the heating crucible and the raw material crucible. Since the heat collecting component is provided with a first cavity recessed radially near the inner circumference of the raw material crucible, it can collect heat through the first cavity, and the heat collecting component can focus the heat received by the heating crucible to the preset height of the second accommodating cavity of the raw material crucible, so that the heat at the preset height of the raw material crucible is the highest. The heat collecting component focuses the heat to the preset height of the raw material crucible by heat transfer through thermal radiation, so that the temperature at the preset height of the raw material crucible is the highest, and a temperature distribution gradually decreasing axially upward is formed from the preset height of the raw material crucible to the top, so that the isotherm of the crystal growth front remains straight or slightly convex for a long time. Therefore, the crucible device has the advantages of promoting the stable growth of crystals in a horizontal or slightly convex manner, reducing crystal defects, and thus improving crystal quality.
[0017] A crystal growth device provided in the second embodiment of the present disclosure has the same effect as the above-mentioned crucible device. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0019] Figure 1 It is a schematic diagram of the cross-sectional structure of a crucible device disclosed in an embodiment of the present disclosure.
[0020] Description of reference numerals:
[0021] 1. Raw material; 2. Heating crucible; 3. Raw material crucible; 4. Heat collecting component; 41. First cavity; 5. Relay crucible; 51. Guide ring platform; 511. Contraction section; 6. Crucible cover; 61. Boss; 7. Heat insulating component; 8. Guide ring; 9. Annular cavity; 10. Adhesive layer; 11. Crystal. DETAILED DESCRIPTION
[0022] The following is a further detailed description of the embodiments of the present disclosure in conjunction with the accompanying drawings and examples. The detailed description of the following embodiments and the accompanying drawings are used to exemplarily illustrate the principles of the present disclosure, but cannot be used to limit the scope of the present disclosure. The present disclosure can be implemented in many different forms and is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.
[0023] The present disclosure provides these embodiments to make the present disclosure thorough and complete, and to fully express the scope of the present disclosure to those skilled in the art. It should be noted that unless otherwise specifically stated, the relative arrangement of the parts and steps, the composition of the materials, the numerical expressions and the numerical values set forth in these embodiments should be interpreted as being merely exemplary, and not as limiting.
[0024] It should be noted that, in the description of the present disclosure, unless otherwise specified, the meaning of "multiple" is greater than or equal to two; the terms "upper", "lower", "left", "right", "inner", "outer", etc., indicating the orientation or positional relationship, are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.
[0025] In addition, the words "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different parts. "Vertical" does not mean vertical in the strict sense, but is within the tolerance range. "Parallel" does not mean parallel in the strict sense, but is within the tolerance range. "Include" or "comprising" and similar words mean that the elements before the word include the elements listed after the word, and do not exclude the possibility of including other elements.
[0026] It should also be noted that in the description of the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to the specific circumstances. When a specific device is described as being located between a first device and a second device, there may or may not be an intermediate device between the specific device and the first device or the second device.
[0027] All terms used in the present disclosure have the same meanings as those understood by those of ordinary skill in the art to which the present disclosure belongs, unless otherwise specifically defined. It should also be understood that terms defined in general dictionaries, for example, should be interpreted as having meanings consistent with their meanings in the context of the relevant technology, and should not be interpreted in an idealized or extremely formal sense, unless explicitly defined as such herein.
[0028] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.
[0029] At present, when preparing automotive-grade silicon carbide crystals, large temperature gradients and non-uniform temperature fields are prone to occur near the crystals, resulting in uneven crystal growth and low yield, which seriously restricts the application of silicon carbide in new energy vehicles. The inventor wants to design a crucible device that reduces the temperature gradient at the growth front of the crystal 11, so that the growth of the crystal 11 always maintains a straight or slightly convex stable growth, and can also control the three processes of induction heat generation, heat transfer and crystal 11 growth separately, so as to effectively control the temperature field.
[0030] Embodiment 1
[0031] A first embodiment of the present disclosure provides a crucible device, which includes: a heating crucible 2, which has a first accommodating cavity; a raw material crucible 3, whose outer diameter is smaller than the inner diameter of the heating crucible 2, and the raw material crucible 3 is arranged in the first accommodating cavity and is coaxial with the heating crucible 2; and a heat collecting component 4, which is arranged between the heating crucible 2 and the raw material crucible 3, and the heat collecting component 4 is provided with a first cavity 41 recessed along the radial direction near the inner periphery of the raw material crucible 3, which is used for focusing the heat of the heating crucible 2 to a preset height of the second accommodating cavity of the raw material crucible 3; wherein the preset height is lower than the top height of the second accommodating cavity.
[0032] Specifically, Figure 1 As shown, the size of the heating crucible 2 and the raw material crucible 3 can be set according to actual needs, and the shapes of the heating crucible 2 and the raw material crucible 3 can be any shape, such as: cylindrical, square barrel and other shapes. The difference between the outer diameter of the raw material crucible 3 and the inner diameter of the heating crucible 2 can be set according to actual needs, and no specific limitation is made here. The heating crucible 2 is the outermost structure, responsible for induction heat generation. A heat collecting component 4 is provided between the heating crucible 2 and the raw material crucible 3, and the specific positional relationship between the heat collecting component 4 and the heating crucible 2 and the raw material crucible 3 can be the following situations: the inner circumference of the heat collecting component 4 and the outer circumference of the raw material crucible 3 are spaced apart, and the outer circumference of the heat collecting component 4 and the inner circumference of the heating crucible 2 are spaced apart; or the inner circumference of the heat collecting component 4 can be in close contact with the outer circumference of the raw material crucible 3, and the outer circumference of the heat collecting component 4 can be in close contact with the inner circumference of the heating crucible 2. In addition, the heat collecting component 4 is provided with a first cavity 41 which is recessed radially around the inner periphery of the raw material crucible 3. The first cavity 41 may be an arc-shaped groove, a V-shaped groove, or a groove of other shapes having the same heat collecting function, which is not specifically limited here. The overall shape of the heat collecting component 4 may be an annular structure with a first cavity 41, or may be a plurality of fan-shaped structures with first cavities 41. The preset height may be specifically set to a position about one-third of the bottom of the second cavity, which is not specifically limited here, as long as the preset height is lower than the top height of the second accommodating cavity. The heat collecting component 4 may be a component made of materials such as graphite, tantalum carbide, or tungsten.
[0033] The crucible device includes a heating crucible 2, a raw material crucible 3 and a heat collecting component 4. The heat collecting component 4 is arranged between the heating crucible 2 and the raw material crucible 3. Since the heat collecting component 4 is provided with a first cavity 41 that is radially recessed near the inner circumference of the raw material crucible 3, the heat can be collected through the first cavity 41. The heat collecting component 4 can focus the heat received by the heating crucible 2 to a preset height of the second accommodating cavity of the raw material crucible 3, so that the heat at the preset height of the raw material crucible 3 is the highest. The heat collecting component 4 focuses the heat to the preset height of the raw material crucible 3 by heat transfer through thermal radiation, so that the raw material crucible 3 forms a temperature distribution that gradually decreases axially upward from the preset height to the top, so that the isotherm of the growth front of the crystal 11 remains straight or slightly convex for a long time. Therefore, the crucible device has the advantages of promoting the stable growth of the crystal 11 horizontally or slightly convexly, reducing the defects of the crystal 11, and thus improving the quality of the crystal 11. In addition, the heat collecting component 4 can also prevent the high temperature zone from shifting due to the relative position change between the heating crucible 2 and the induction coil during the furnace loading process of the crucible device, which is beneficial to improving the utilization rate of the raw material 1.
[0034] In some embodiments, the crucible device also includes: a relay crucible 5, which has a third accommodating cavity that penetrates along the axial direction, and the relay crucible 5 is movably connected to the top of the raw material crucible 3. The inner ring of the relay crucible 5 is provided with a guide ring platform 51, and the inner diameter of the guide ring platform 51 is smaller than the inner diameter of the raw material crucible 3.
[0035] Specifically, Figure 1 As shown, the relay crucible 5 is movably connected to the top of the raw material crucible 3, and the movably connected here is a detachable connection method, such as: threaded connection, groove clamping or plug-in connection, etc. The inner diameter and outer diameter of the relay crucible 5 can be equal to the size of the raw material crucible 3, and the third accommodating cavity formed by the relay crucible 5 is connected to the second accommodating cavity; the inner circumference of the relay crucible 5 is provided with a guide ring 51, and the inner diameter of the guide ring 51 is smaller than the inner diameter of the raw material crucible 3. The size can be set according to actual needs, and there is no specific limitation here, as long as it does not hinder the growth of the seed crystal. The setting of the guide ring 51 can prevent the high-temperature airflow transmitted upward along the inner wall of the raw material crucible 3 from directly eroding the surface of the crystal 11, avoiding the instability of the growth of the crystal 11, and can also suppress the formation of turbulence in the growth chamber of the silicon carbide crystal 11.
[0036] In some embodiments, a contraction section 511 is provided at the bottom of the guide ring 51 , and the inner diameter of the contraction section 511 gradually decreases from the bottom to the top of the relay crucible 5 .
[0037] Specifically, Figure 1As shown, the bottom of the guide ring 51 is provided with a contraction section 511, and the height of the contraction section 511 can be set according to actual needs. The setting of the contraction section 511 can guide the airflow on the inner wall of the raw material crucible 3, and further prevent the high-temperature airflow transmitted upward along the inner wall of the raw material crucible 3 from directly eroding the surface of the crystal 11. The combination of the guide ring and the guide ring 51 not only acts as a barrier to the high-temperature airflow transmitted upward along the inner wall of the raw material crucible 3, but also guides it, so that it slowly moves upward, preventing the formation of turbulence in the growth chamber of the silicon carbide crystal 11, which is conducive to the formation of a straight or slightly convex isotherm at the growth front of the crystal 11, so that the crystal grows straight or slightly convexly and stably.
[0038] In some embodiments, the crucible device further includes: a crucible cover 6, which is movably connected to the top of the relay crucible 5 and forms a sealed space with the raw material crucible 3 and the relay crucible 5. The crucible cover 6 has a growth surface opposite to the second accommodating cavity for the growth of seed crystals.
[0039] Specifically, Figure 1 As shown, the crucible cover 6 is movably connected to the top of the relay crucible 5, and the movably connected here is a detachable connection method, such as: threaded connection, groove clamping or plug-in connection, etc. The crucible cover 6 forms a sealed space with the raw material crucible 3 and the relay crucible 5. In addition, the size of the crucible cover 6 can also be increased to form a sealed space with the heating crucible 2 to prevent heat loss. The crucible cover 6 has a growth surface opposite to the second accommodating cavity. The size of the growth surface can be adapted to the outlet size of the top of the relay crucible 5, or it can be smaller than the outlet size of the relay crucible 5. The specific size of the growth surface is not limited here.
[0040] In some embodiments, the crucible device further includes: a heat insulating component 7 , which is filled in the gap between the relay crucible 5 and the heating crucible 2 .
[0041] Specifically, Figure 1 As shown, the heat insulating component 7 can be specifically an insulation ring, or can be composed of a plurality of fan-shaped structures. The thickness of the heat insulating component 7 can be set according to actual needs. The heat insulating component 7 can be specifically made of soft graphite felt or hard graphite felt. The heat insulating component 7 can effectively block the flow of heat from the heating crucible 2 to the third containing cavity. The heat collecting component 4 and the heat insulating component 7 form an intermediate structure, which is responsible for regulating the heat transfer process between the heating crucible 2 and the growth crucible system. The growth crucible system here refers to the sealed space formed by the combination of the raw material crucible 3, the relay crucible 5 and the crucible cover 6 for the decomposition of the raw material 1 and the growth of the crystal 11. The combined use of the heat collecting component 4 and the heat insulating component 7 further enables the raw material crucible 3 to form an axially gradually decreasing temperature distribution from the preset height to the top, so that the isotherm of the growth front of the crystal 11 remains straight or slightly convex for a long time.
[0042] In some embodiments, the growth surface is provided with a boss 61 extending along the crucible cover 6 toward the second accommodating cavity and extending to the third accommodating cavity.
[0043] Specifically, Figure 1 As shown, the growth surface is provided with a boss 61 extending along the crucible cover 6 toward the second accommodating cavity and extending to the third accommodating cavity. The height of the boss 61 can be specifically 1 mm-20 mm, and the boss 61 of other heights can also be provided according to the specific dimensions of the relay crucible 5 and the raw material crucible 3. Providing the boss 61 on the growth surface can make the growth substrate of the seed crystal higher than the growth substrate of the polycrystalline, which can prevent the rapid growth of the polycrystalline, avoid the polycrystalline interfering with the growth of the seed crystal, reduce the stress around the crystal 11, and improve the uniformity of the quality of the crystal 11.
[0044] In some embodiments, the crucible device further includes: a guide ring 8 , which is disposed in an annular positioning groove on the top of the guide ring platform 51 , and the height of the guide ring 8 extends axially to the growth surface of the crucible cover 6 .
[0045] Specifically, Figure 1 As shown, a guide ring 8 is provided in the annular positioning groove at the top of the guide ring platform 51. The guide ring 8 can be integrally formed with the relay crucible 5 or can be a separate component. The guide ring 8 can be made of tantalum, tantalum carbide or graphite, and its wall thickness can be between 1mm-5mm, or can be set to other sizes according to actual needs. The guide ring 8 cooperates with the guide ring platform 51 to guide the hot air flow of the inner peripheral wall of the raw material crucible 3 upward, constrain the air flow, prevent the hot air flow of the inner peripheral wall of the raw material crucible 3 from directly eroding the surface of the growing crystal 11 and then flowing back to the raw material crucible 3, so that turbulence is formed in the growth chamber of the crystal 11. In addition, guide rings 8 with different inner diameters can be set to control the growth size of the crystal 11. When the seed crystal grows, it will grow together with the parts in contact with it, thereby damaging the parts in contact with it. In order to improve the material utilization rate of the crucible device, the guide ring 8 can be made into a separate component, and the guide ring 8 can be replaced at any time without replacing the entire relay crucible 5, which also reduces the production cost.
[0046] In some embodiments, an annular cavity 9 is provided between the outer circumferential surface of the guide ring 8 opposite to the boss 61 and the inner circumferential surface of the relay crucible 5 .
[0047] Specifically, Figure 1As shown, an annular cavity 9 is provided between the outer peripheral surface of the guide ring 8 opposite to the boss 61 and the inner peripheral surface of the relay crucible 5. The height of the annular cavity 9 is adapted to the growth height of the crystal 11, and the thickness of the annular cavity 9 can be set according to actual needs. The annular cavity 9 plays a role of heat insulation, which can reduce the density of heat transfer from the relay crucible 5 to the growth area of the crystal 11. The growth area here is the space above the raw materials in the growth crucible system, so that the heat transferred from the crucible wall to the growth area of the crystal 11 is much less than the heat transferred from the raw material 1 area, so that the heat flow in the growth area of the crystal 11 is similar to the unidirectional flow from the raw material 1 area to the growth area, which is more conducive to the formation of a temperature distribution that gradually decreases axially upward in the growth front area of the crystal 11, so that the isotherm of the growth front of the crystal 11 remains straight or slightly convex for a long time.
[0048] In some embodiments, the crucible device further includes: a bonding layer 10 disposed on the surface of the boss 61 .
[0049] Specifically, Figure 1 As shown, the bonding layer 10 is a carbon layer formed by thermal decomposition of organic matter.
[0050] In addition, in order to facilitate the coaxiality of the raw material crucible 3 and the heating crucible 2, a positioning column can be set at the bottom of the first accommodating cavity of the heating crucible 2, and a positioning groove adapted to the positioning column can be set at the bottom of the raw material crucible 3, or other structures with positioning function can also be set.
[0051] Embodiment 2
[0052] Embodiment 2 of the present disclosure provides a crystal 11 growth device, which includes: a crucible device; an insulating felt, which is arranged on the outside of the crucible device and is used to wrap the crucible device; and a heating device, which is arranged on the outside of the insulating felt and is used to heat the insulating felt to heat the crucible device.
[0053] Specifically, the insulation felt can be arranged at the bottom, around or top of the heating crucible 2, and the insulation felt can be made of carbon felt, such as graphite soft felt. The heating device can be an electromagnetic induction coil in a crystal growth furnace or other device with heating function, and the heating device is not specifically limited here.
[0054] When the crystal growth equipment 11 is in use, firstly, the side wall and the bottom of the heating crucible 2 are tightly wrapped with the insulation felt and loaded into the crystal growth furnace; then, the SiC raw material 1 is filled into the raw material crucible 3 and compacted; then, the relay crucible 5 is screwed onto the raw material crucible 3, and the guide ring 8 is placed in the positioning groove; then, the crucible cover 6 bonded with the seed crystal is screwed onto the relay crucible 5 to form a sealed growth crucible system; thereafter, the growth crucible system is installed into the heating crucible 2, and the raw material crucible 3 is made coaxial with the heating crucible 2; again, the heat collecting component 4 is installed in the gap between the raw material crucible 3 and the heating crucible 2; finally, the heat insulating component 7 is installed in the gap between the relay crucible 5 and the heating crucible 2, and after the top insulation felt is set, the crystal growth furnace cover is closed to carry out crystal growth.
[0055] So far, various embodiments of the present disclosure have been described in detail. In order to avoid obscuring the concept of the present disclosure, some details known in the art are not described. Based on the above description, those skilled in the art can fully understand how to implement the technical solution disclosed here.
[0056] Although some specific embodiments of the present disclosure have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present disclosure. It should be understood by those skilled in the art that the above embodiments may be modified or some technical features may be replaced by equivalents without departing from the scope and spirit of the present disclosure. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there is no structural conflict.
Claims
1. A crucible device, characterized in that: include: A heat-generating crucible (2) having a first receiving cavity; a raw material crucible (3) whose outer diameter is smaller than the inner diameter of the heating crucible (2); the raw material crucible (3) is arranged in the first accommodating cavity and is coaxial with the heating crucible (2); and A heat collecting component (4) is arranged between the heating crucible (2) and the raw material crucible (3); the heat collecting component (4) is provided with a first cavity (41) recessed in the radial direction near the inner periphery of the raw material crucible (3), and is used to focus the heat of the heating crucible (2) to a preset height of a second accommodating cavity of the raw material crucible (3); Wherein, the preset height is lower than the top height of the second accommodating cavity.
2. The crucible device according to claim 1, characterized in that Also includes: A relay crucible (5) has a third accommodating cavity that penetrates in the axial direction. The relay crucible (5) is movably connected to the top of the raw material crucible (3). A guide ring platform (51) is provided on the inner circumference of the relay crucible (5). The inner diameter of the guide ring platform (51) is smaller than the inner diameter of the raw material crucible (3).
3. The crucible device according to claim 2, characterized in that: A contraction section (511) is provided at the bottom of the guide ring platform (51), and the inner diameter of the contraction section (511) gradually decreases from the bottom to the top of the relay crucible (5).
4. The crucible device according to claim 2, characterized in that: Also includes: A crucible cover (6) is movably connected to the top of the relay crucible (5) and forms a sealed space with the raw material crucible (3) and the relay crucible (5). The crucible cover (6) has a growth surface opposite to the second accommodating cavity and is used for the growth of seed crystals.
5. The crucible device according to claim 2, characterized in that: Also includes: The heat insulating component (7) is filled and arranged in the gap between the relay crucible (5) and the heat generating crucible (2).
6. The crucible device according to claim 4, characterized in that: The growth surface is provided with a boss (61) extending along the crucible cover (6) towards the second accommodating cavity and extending to the third accommodating cavity.
7. The crucible device according to claim 6, characterized in that Also includes: A guide ring (8) is arranged in an annular positioning groove on the top of the guide ring platform (51), and the height of the guide ring (8) extends axially to the growth surface of the crucible cover (6).
8. The crucible device according to claim 7, characterized in that An annular cavity (9) is provided between the outer peripheral surface of the guide ring (8) opposite to the boss (61) and the inner peripheral surface of the relay crucible (5).
9. The crucible device according to claim 6, characterized in that: Also includes: The adhesive layer (10) is arranged on the surface of the boss (61).
10. A crystal growth device, characterized in that: include: The crucible device according to any one of claims 1 to 9; A thermal insulation felt is arranged on the outside of the crucible device and is used to wrap the crucible device; and A heating device is arranged on the outside of the thermal insulation felt and is used to heat the thermal insulation felt to heat the crucible device.