Metal microstrip line and coating device

Abstract

The embodiment of the utility model relates to a metal microstrip line and a coating device, the metal microstrip line comprises a microstrip line body and a frame, the frame surrounds the periphery of the microstrip line body, and a gap extending along the circumferential direction of the microstrip line is arranged between the inner edge of the frame and the outer edge of the microstrip line body. And a weakening connection point for connecting the frame and the microstrip line body is arranged in the gap, so that the microstrip line body can be protected through the frame. In the thickness direction of the metal microstrip line, at least one side face of the microstrip line body is provided with a coating area, the coating area is provided with an ion beam coating film, and the ion beam coating film is used for being connected with a to-be-connected piece in a welded mode. A coating area is arranged on a microstrip line body, an ion beam coating film is formed on the coating area to serve as a welding spot to be welded with a to-be-connected piece, and the ion beam coating film is formed by ion beam spray deposition, namely in a non-electrochemical mode. And environmental protection is facilitated, and the problem that the raw material cost is high due to the fact that welding spots are formed through electroplating can be solved.

Description

Technical Field

[0001] The embodiment of the utility model relates to the technical field of communication devices, and in particular to a metal microstrip line and a coating device. Background Art

[0002] In mobile communication network coverage, the electrically tilted base station antenna is one of the key devices for coverage network, and the phase shifter is one of the most core components of the electrically tilted base station antenna. The performance of the phase shifter directly determines the performance of the electrically tilted antenna, which in turn affects the coverage quality of the network. The feed network is one of the key components of the phase shifter.

[0003] The existing feeding network of the phase shifter is mainly PCB and metal microstrip line. PCB is limited by the substrate and has relatively large losses. For this reason, the current feeding network mainly uses metal microstrip line. In order to deal with the problem that the metal microstrip line needs to be welded with external cables, it is usually necessary to perform overall electroplating or partial electroplating on the metal microstrip line to form an electroplating layer as a solder joint.

[0004] However, the electroplating layer is usually formed by electroplating with precious metals, the raw material cost is relatively high, and the electroplating process is an electrochemical method. As the world pays more and more attention to environmental protection, environmental protection gradually restricts the development of electroplating processing technology, which further increases the cost of electroplating. Utility Model Content

[0005] In order to solve the above technical problem or at least partially solve the above technical problem, an embodiment of the utility model provides a metal microstrip line and a coating device.

[0006] In a first aspect, an embodiment of the utility model provides a metal microstrip line, including a microstrip line body and a frame;

[0007] The frame is arranged around the periphery of the microstrip line body, and a gap extending along the circumference of the microstrip line is arranged between the inner edge of the frame and the outer edge of the microstrip line body, and at least one weakened connection point connecting the frame and the microstrip line body is arranged in the gap;

[0008] Along the thickness direction of the metal microstrip line, a coating portion is provided on at least one side surface of the microstrip line body, and an ion beam coating film is provided on the coating portion. The ion beam coating film is used for welding connection with a to-be-connected component.

[0009] In some embodiments, along the length direction of the metal microstrip line, the microstrip line body includes a first end and a second end that are oppositely disposed, and the coating portion is disposed at the first end or close to the first end;

[0010] And / or, along the width direction of the metal microstrip line, the microstrip line body includes a plurality of sub-microstrip lines connected in sequence, each of the sub-microstrip lines is provided with the coating portion, and the coating portion of each of the sub-microstrip lines is provided with an ion beam coating film.

[0011] In some embodiments, along the thickness direction of the metal microstrip line, the ion beam coated film includes a substrate, a fusion layer, a welding layer and a protective layer stacked in sequence, and the welding layer is used to be welded to the part to be connected after the protective layer is welded.

[0012] In a second aspect, an embodiment of the utility model provides a coating device for coating the above-mentioned metal microstrip line, the coating device at least comprising a first clamping plate and a second clamping plate;

[0013] The metal microstrip line is located between the first clamping plate and the second clamping plate, and an ion beam injection port is provided at a position on the first clamping plate corresponding to the coating portion and a position on the second clamping plate corresponding to the coating portion, so that the ion beam is injected through the ion beam injection port and deposited on the coating portion to form the ion beam coating film.

[0014] In some embodiments, the ion beam injection port includes a main injection port and a scattering port connected to the main injection port, at least the main injection port is arranged corresponding to the coating portion, and the scattering port extends to the outer edges of the first clamping plate and the second clamping plate;

[0015] Along the direction from the main injection port to the scattering port, the inner diameter of the scattering port gradually increases.

[0016] In some embodiments, the spraying direction of the ion beam sprayed onto the coating portion through the scattering port and the main spraying port is parallel to the plane where the coating portion is located;

[0017] And / or, the first splint and the second splint have the same thickness, and the thickness of the first splint is in the range of 3 mm to 5 mm;

[0018] and / or, along the length direction of the first clamping plate or the second clamping plate, the size of the main injection port is 4 mm-6 mm;

[0019] And / or, the scattering angle of the scattering port is 40°-50°.

[0020] In some embodiments, a first step structure is provided on one side of the first clamping plate facing the metal microstrip line, the metal microstrip line includes a plurality of sub-microstrip lines arranged in sequence along the width direction of the first clamping plate, each of the sub-microstrip lines is provided with the coating portion, and the plurality of sub-microstrip lines are partially overlapped and arranged on the first step structure; a second step structure adapted to the first step structure is provided on one side of the second clamping plate facing the metal microstrip line;

[0021] The ion beam injection port is arranged on the second clamping plate, and the ion beam injection port is arranged corresponding to the coating portion of each sub-microstrip line.

[0022] In some embodiments, a spraying direction of the ion beam sprayed onto the coating portion through the ion beam spraying port is perpendicular to a plane where the coating portion is located.

[0023] In some embodiments, the first clamping plate and the second clamping plate are arranged in parallel and are both inclined relative to a horizontal plane, and a spray direction of the ion beam sprayed onto the coating portion through the ion beam spray port forms an acute angle or an obtuse angle with the plane where the coating portion is located.

[0024] In some embodiments, a first connection hole is provided on the first clamping plate, a second connection hole is provided on the second clamping plate at a position corresponding to the first connection hole, and an avoidance hole is provided on the metal microstrip line at a position corresponding to the second connection hole;

[0025] The first clamping plate is connected to the second clamping plate through fasteners passing through the first connecting hole, the second connecting hole and the avoidance hole, and the metal microstrip line is clamped between the first clamping plate and the second clamping plate.

[0026] Compared with the prior art, the technical solution provided by the embodiment of the utility model has the following advantages:

[0027] The embodiment of the utility model provides a metal microstrip line and a coating device, the metal microstrip line includes a microstrip line body and a frame, the frame is arranged around the periphery of the microstrip line body, and a gap extending along the circumferential direction of the microstrip line is arranged between the inner edge of the frame and the outer edge of the microstrip line body, and at least one weakened connection point connecting the frame and the microstrip line body is arranged in the gap so that the microstrip line body can be protected by the frame. Along the thickness direction of the metal microstrip line, a coating area is arranged on at least one side of the microstrip line body, and an ion beam coating film is arranged on the coating area, and the ion beam coating film is used for welding and connecting with the parts to be connected. That is to say, by arranging the coating area on the microstrip line body, and forming the ion beam coating film on the coating area as a welding point to be welded with the parts to be connected, the ion beam coating film itself is formed by ion beam spray deposition, that is, it is formed by non-electrochemical method, which is not only beneficial to environmental protection but also can avoid the problem of high raw material cost caused by electroplating to form welding points on the microstrip line body. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings herein are incorporated in and constitute a part of the specification, illustrate embodiments consistent with the embodiments of the utility model, and together with the description, are used to explain the principles of the embodiments of the utility model.

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the utility model or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0030] Figure 1 It is a schematic diagram of the structure of the metal microstrip line described in the embodiment of the utility model;

[0031] Figure 2 for Figure 1 A local enlarged schematic diagram at point A;

[0032] Figure 3 This is a schematic structural diagram of an ion beam coating film for a metal microstrip line according to an embodiment of the utility model;

[0033] Figure 4 The structure of the first coating device and the metal microstrip line in the embodiment of the utility model is shown in FIG. Figure 1 ;

[0034] Figure 5 The structure of the first coating device and the metal microstrip line in the embodiment of the utility model is shown in FIG. Figure 2 ;

[0035] Figure 6 The structure of the first clamping plate or the second clamping plate of the first coating device of the present utility model embodiment is shown in FIG. Figure 1 ;

[0036] Figure 7 The structure of the first clamping plate or the second clamping plate of the first coating device of the present utility model embodiment is shown in FIG. Figure 2 ;

[0037] Figure 8 This is a schematic structural diagram of the first clamping plate and the metal microstrip line of the second coating device according to an embodiment of the utility model;

[0038] Fig. 9 This is a schematic structural diagram of the second coating device and the metal microstrip line according to an embodiment of the utility model;

[0039] Fig.10 This is a schematic structural diagram of a third coating device according to an embodiment of the utility model;

[0040] Fig.11 This is a schematic structural diagram of the first clamping plate or the second clamping plate of the third coating device described in an embodiment of the utility model.

[0041] Among them, 1. microstrip line body; 11. ion beam coating film; 111. substrate; 112. fusion layer; 113. welding layer; 114. protective layer; 12. first end; 13. second end; 14. sub-microstrip line; 15. avoidance hole; 2. frame; 3. gap; 4. weakened connection point; 51. first clamping plate; 511. first step structure; 512. first connection hole; 513. incident surface; 52. second clamping plate; 53. ion beam injection port; 531. main injection port; 532. scattering port; 533. volume tank. DETAILED DESCRIPTION

[0042] In order to more clearly understand the above-mentioned purposes, features and advantages of the embodiments of the present invention, the scheme of the embodiments of the present invention will be further described below. It should be noted that the embodiments of the present invention and the features in the embodiments can be combined with each other without conflict.

[0043] In the following description, many specific details are set forth to facilitate a full understanding of the embodiments of the utility model, but the embodiments of the utility model can also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only part of the embodiments of the utility model, rather than all of the embodiments.

[0044] Embodiment 1

[0045] Reference Figures 1 to 3 As shown, this embodiment provides a metal microstrip line, including a microstrip line body 1 and a frame 2.

[0046] The frame 2 is arranged around the periphery of the microstrip line body 1, and a gap 3 extending along the circumference of the microstrip line is arranged between the inner edge of the frame 2 and the outer edge of the microstrip line body 1, and at least one weakened connection point 4 connecting the frame 2 and the microstrip line body 1 is arranged in the gap 3.

[0047] Along the thickness direction of the metal microstrip line, a coating area is provided on at least one side surface of the microstrip line body 1 , and an ion beam coating film 11 is provided on the coating area. The ion beam coating film 11 is used for welding connection with a to-be-connected component.

[0048] When implementing it, refer to Figure 1 As shown, the frame 2 is arranged around the periphery of the microstrip line body 1 and is connected by at least one weakened connection member arranged in the gap 3 between the two, so that the frame 2 and the microstrip line body 1 can be formed as one. Since the microstrip line body 1 itself is a thin, thin and long strip structure, in order to prevent the metal microstrip line from bending and damage during processing, cleaning, coating and transportation, a frame 2 connected to the microstrip line body 1 is arranged on the periphery of the microstrip line body 1, so that the microstrip line body 1 can be effectively protected by the frame 2 to prevent the microstrip line body 1 from deformation and bending. After all processing operations on the microstrip line body 1 are completed, the frame 2 can be separated by stamping or cutting the weakened connection point 4, thereby obtaining the final desired microstrip line body 1.

[0049] Specifically, the gap 3 between the frame 2 and the microstrip line body 1 may be a continuous gap 3 extending along the circumference of the microstrip line body 1, or may be a discontinuous gap 3. One or more weakened connection points 4 may be provided in the gap 3 to connect the frame 2 and the microstrip line body 1 together. Exemplarily, the weakened connection point 4 may be a connecting piece or an adhesive point, as long as it is convenient to separate the frame 2 and the microstrip line body 1.

[0050] For example, the microstrip line body 1 and the frame 2 can be integrally formed to save manufacturing steps and improve overall strength. After the microstrip line body 1 and the frame 2 are integrally formed, a gap 3 can be cut between the microstrip line body 1 and the frame 2 to facilitate subsequent separation of the microstrip line body 1 and the frame 2.

[0051] Along the thickness direction of the metal microstrip line (for details, please refer to Figure 4 A coating area is provided on at least one side of the microstrip line body 1, and an ion beam coating film 11 is provided on the coating area. The ion beam coating film 11 is used for welding and connecting with the parts to be connected. The ion beam coating film 11 itself is formed by ion beam spray deposition, that is, it is formed by non-electrochemical method, which is not only beneficial to environmental protection but also can avoid the problem of high raw material cost caused by electroplating to form solder joints on the microstrip line body 1.

[0052] The metal microstrip line provided in this embodiment includes a microstrip line body 1 and a frame 2. The frame 2 is arranged around the periphery of the microstrip line body 1, and a gap 3 extending along the circumferential direction of the microstrip line is arranged between the inner edge of the frame 2 and the outer edge of the microstrip line body 1. At least one weakened connection point 4 connecting the frame 2 and the microstrip line body 1 is arranged in the gap 3, so that the microstrip line body 1 can be protected by the frame 2. Along the thickness direction of the metal microstrip line, a coating area is arranged on at least one side of the microstrip line body 1, and an ion beam coating film 11 is arranged on the coating area. The ion beam coating film 11 is used for welding and connecting with the to-be-connected parts. In other words, by arranging the coating area on the microstrip line body 1, and forming the ion beam coating film 11 on the coating area as a welding point to be welded with the to-be-connected parts, the ion beam coating film 11 itself is formed by ion beam spray deposition, that is, formed by non-electrochemical method, which is not only environmentally friendly but also can avoid the problem of high raw material cost caused by electroplating to form welding points on the microstrip line body 1.

[0053] Reference Figure 1 As shown, in some embodiments, along the length direction of the metal microstrip line, the microstrip line body 1 includes a first end 12 and a second end 13 that are oppositely arranged, and the coating area is arranged at or near the first end 12. Specifically, refer to Figure 1 In the x direction shown, the microstrip line body 1 may include a left end and a right end that are relatively arranged, the left end may be set as the first end 12 , the right end may be set as the second end 13 , and the coating area may be set at the first end 12 or close to the first end 12 .

[0054] Furthermore, along the width direction of the metal microstrip line (refer to Figure 1 The microstrip line body 1 includes a plurality of sub-microstrip lines 14 connected in sequence, each sub-microstrip line 14 is provided with a coating area, and each sub-microstrip line 14 is provided with an ion beam coating film 11 on the coating area, so that a plurality of ion beam coating films 11 can be formed on the microstrip line body 1 as welding points, so as to facilitate welding connection with external parts to be connected.

[0055] Reference Figure 3 As shown, in some embodiments, along the thickness direction of the metal microstrip line, the ion beam coated film 11 includes a substrate 111, a fusion layer 112, a welding layer 113 and a protective layer 114 stacked in sequence, and the welding layer 113 is used to weld and connect with the to-be-connected member after the protective layer 114 is welded.

[0056] In specific implementation, the ion beam coating film 11 is composed of a substrate 111, a fusion layer 112, a welding layer 113, and a protective layer 114. The ion beam coating film 11 is formed by ion physical vapor deposition as a whole. Among them, after the fusion layer 112 is a weldable metal ion bombarding the surface of the substrate 111, the weldable metal ions are integrated into the surface of the substrate 111 to form two metal fusion layers 112, so that the coating film has high adhesion and is not easy to fall off. The welding layer 113 is a weldable metal ion deposition layer, which is a weldable point of the metal microstrip line. The thickness of the weldable metal ion deposition layer of the welding layer 113 can be adjusted according to demand to meet the welding requirements. The protective layer 114 is a weldable compound, which can prevent the welding layer 113 from oxidizing, which is not conducive to welding and brings the hidden danger of intermodulation, and does not affect the welding quality of the welding layer 113.

[0057] That is to say, when the ion beam coated film 11 is welded to the external part to be connected, the high temperature first welds the protective layer 114, thereby exposing the welding layer 113 for welding connection with the part to be connected, thereby not affecting the welding of the welding layer 113 and also protecting the welding layer 113 from oxidation before the welding connection is made.

[0058] Embodiment 2

[0059] Reference Figures 4 to 11 As shown, this embodiment provides a coating device for coating the metal microstrip line of the above embodiment, and the coating device at least includes a first clamping plate 51 and a second clamping plate 52 .

[0060] The metal microstrip line is located between the first clamping plate 51 and the second clamping plate 52, and the position on the first clamping plate 51 corresponding to the coating area and the position on the second clamping plate corresponding to the coating area are provided with ion beam injection ports 53, so that the ion beam is injected through the ion beam injection ports 53 and deposited on the coating area to form an ion beam coating film 11.

[0061] That is to say, referring to Figure 4 and Fig. 9 As shown, when it is necessary to perform ion beam spraying on the coating area on the metal microstrip line to form an ion beam coating film 11, the metal microstrip line can be fixed between the first clamping plate 51 and the second clamping plate 52 to ensure that the position of the metal microstrip line remains unchanged, and then the first clamping plate 51 and the second clamping plate 52 are both provided with ion beam spray ports 53 at positions corresponding to the coating area, so that the ion beam can be sprayed through the ion beam spray ports 53 and deposited on the coating area to form the required ion beam coating film 11 on the coating area of ​​the metal microstrip line, so as to facilitate welding connection with external parts to be connected as welding points. In addition, the ion beam coating film 11 itself is formed by ion beam spray deposition, that is, it is formed by non-electrochemical means, which is not only environmentally friendly but also can avoid the problem of high raw material costs caused by electroplating to form welding points on the microstrip line body 1.

[0062] Exemplarily, one metal microstrip line may be sandwiched between the first clamping plate 51 and the second clamping plate 52, or two or more metal microstrip lines may be sandwiched. In this embodiment, two metal microstrip lines may be sandwiched between the first clamping plate 51 and the second clamping plate 52, and after coating, the two metal microstrip lines may be two symmetrical parts to meet the two polarization requirements of the phase shifter. In addition, multiple first clamping plates 51 and second clamping plates 52 may be provided, and two adjacent first clamping plates 51 and second clamping plates 52 may form a group to sandwich at least one metal microstrip line.

[0063] Reference Figures 4 to 7 As shown, in the first coating device provided by this embodiment, the ion beam injection port 53 on the first clamp plate 51 and the second clamp plate 52 includes a main injection port 531 and a scattering port 532 connected to the main injection port 531, at least the main injection port 531 is arranged corresponding to the coating area, and the scattering port 532 extends to the outer edge of the first clamp plate 51 and the second clamp plate 52; along the direction from the main injection port 531 to the scattering port 532, the inner diameter of the scattering port 532 gradually increases, so that the ion beam can be injected into the main injection port 531 under the guidance of the scattering port 532 and deposited on the coating area corresponding to the main injection port 531 to form the desired ion beam coating film 11.

[0064] In specific implementation, for the first coating device, the spray direction of the ion beam sprayed onto the coating area through the scattering port 532 and the main spray port 531 is parallel to the plane where the coating area is located, so that the ion beam is sprayed into the scattering port 532 and the main spray port 531 in a direction parallel to the plane where the coating area is located and then deposited on the coating area, that is, the spray direction of the ion beam is perpendicular to the incident surface 513.

[0065] Furthermore, a volume groove 533 connected to the main injection port 531 can be set on the side of the main injection port 531 away from the scattering port 532, so that the ion beam can be deposited in the volume groove 533 to increase the density of the ion beam, and then increase the thickness of the ion beam coating film 11, thereby reducing the deposition time and improving the forming efficiency of the ion beam coating film 11.

[0066] In some embodiments, the thickness of the first clamping plate 51 and the second clamping plate 52 are the same, and the thickness of the first clamping plate 51 (specifically, Figure 7 The dimension in the z direction as shown) ranges from 3 mm to 5 mm, so that the ion beam coating film 11 of a desired thickness can be formed by properly setting the thickness of the first clamping plate 51 and the second clamping plate 52.

[0067] For example, the thickness w of the first clamping plate 51 and the second clamping plate 52 may be 3 mm, or 4 mm, or 5 mm.

[0068] In some embodiments, along the length direction of the first clamping plate 51 or the second clamping plate 52, the size of the main injection port 531 is 4 mm-6 mm. Figure 4 In the x direction shown, by properly setting the size L of the main injection port 531, an ion beam coating film 11 of a desired thickness can be formed.

[0069] For example, the dimension L of the main injection port 531 along the x direction may be 4 mm, or may be 5 mm, or may be 6 mm.

[0070] In some embodiments, along the width direction of the first clamping plate 51 or the second clamping plate 52, the depth dimension of the ion beam injection port 53 is 5 mm-8 mm. Figure 6 In the y direction shown, by properly setting the depth dimension H1 of the ion beam injection port 53, an ion beam coating film 11 of a desired thickness can be formed.

[0071] For example, the dimension H1 of the ion beam injection port 53 in the y direction may be 5 mm, or 7 mm, or 8 mm. In addition, the total depth H2 of the ion beam injection port 53 and the volume slot 533 may be reasonably set, and the specific total depth H2 may be set according to actual needs.

[0072] In some embodiments, the scattering angle of the scattering port 532 is 40°-50°. By properly setting the scattering angle of the scattering port 532 , the injection amount of the ion beam injected into the main injection port 531 can be adjusted.

[0073] For example, the scattering angle of the scattering port 532 may be 40°, or may be 45° or 50°.

[0074] Reference Figure 8 and Fig. 9 As shown, this embodiment provides a second coating device, in which a first step structure 511 is provided on the side of the first clamping plate 51 facing the metal microstrip line, and the metal microstrip line includes a plurality of sub-microstrip lines 14 arranged in sequence along the width direction of the first clamping plate 51, and a coating area is provided on each sub-microstrip line 14, and a plurality of sub-microstrip lines 14 are partially overlapped and arranged on the first step structure 511; a second step structure adapted to the first step structure is provided on the side of the second clamping plate 52 facing the metal microstrip line; an ion beam injection port 53 is provided on the second clamping plate 52, and the ion beam injection port 53 is provided corresponding to the coating area of ​​each sub-microstrip line 14.

[0075] In a specific implementation, by setting a first step structure 511 on the first clamping plate 51 and a second step structure on the second clamping plate 52, multiple sub-microstrip lines 14 can be arranged in a partially overlapping manner between the two to save the space occupied by the sub-microstrip lines 14, which is beneficial to reducing the volume of the entire coating device.

[0076] In addition, the ion injection port can be one or more Fig. 9 The four ion injection ports shown each correspond to the coating area of ​​all the sub-microstrip lines 14 .

[0077] Exemplarily, the first clamping plate 51 and the second clamping plate 52 may be connected by fasteners such as bolts, so that the metal microstrip line is reliably clamped therebetween to facilitate ion beam injection.

[0078] When the second coating device is used, the spraying direction of the ion beam sprayed from the ion beam spray port 53 onto the coating area is perpendicular to the plane where the coating area is located, thereby realizing vertical spraying of the ion beam.

[0079] Reference Fig.10 and Fig.11 As shown, this embodiment also provides a third coating device. The difference between the third coating device and the first coating device is that the first clamping plate 51 and the second clamping plate 52 are arranged in parallel and are both inclined relative to the vertical plane. At this time, the injection direction of the ion beam injected onto the coating area through the ion beam injection port 53 forms an acute angle with the plane where the coating area is located, for example, it can be set at 10°, so that inclined injection of the ion beam can be achieved.

[0080] Reference Figures 4 to 11 As shown, for the above-mentioned different coating devices, a first connecting hole 512 is provided on the first clamping plate 51, a second connecting hole is provided on the second clamping plate 52 at a position corresponding to the first connecting hole 512, and an avoidance hole 15 is provided on the metal microstrip line at a position corresponding to the second connecting hole. The first clamping plate 51 is connected to the second clamping plate 52 by fasteners passed through the first connecting hole 512, the second connecting hole and the avoidance hole 15, and the metal microstrip line is clamped between the first clamping plate 51 and the second clamping plate 52 to achieve locking of the metal microstrip line.

[0081] For example, the first connection hole 512 and the second connection hole may both be threaded holes, and the fastener may be a bolt matched with the threaded hole. Alternatively, the first connection hole 512 and the second connection hole may both be smooth holes, and the fastener may be a fastening pin matched with the smooth hole.

[0082] It should be noted that, in this article, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0083] The above description is only a specific implementation of the embodiment of the utility model, so that those skilled in the art can understand or implement the embodiment of the utility model. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the embodiment of the utility model. Therefore, the embodiment of the utility model will not be limited to these embodiments described herein, but will conform to the widest range consistent with the principles and novel features of the embodiment of the utility model described herein.

Claims

1. A metal microstrip line, characterized in that: It comprises a microstrip line body (1) and a frame (2); The frame (2) is arranged around the periphery of the microstrip line body (1), and a gap (3) extending along the circumference of the microstrip line body (1) is arranged between the inner edge of the frame (2) and the outer edge of the microstrip line body (1), and at least one weakened connection point (4) connecting the frame (2) and the microstrip line body (1) is arranged in the gap (3); Along the thickness direction of the metal microstrip line, at least one side surface of the microstrip line body (1) has a coating area, and an ion beam coating film (11) is provided on the coating area. The ion beam coating film (11) is used for welding connection with a to-be-connected component.

2. The metal microstrip line according to claim 1, characterized in that: Along the width direction of the metal microstrip line, the microstrip line body (1) comprises a plurality of sub-microstrip lines (14) connected in sequence, each of the sub-microstrip lines (14) is provided with the coating area, and the coating area of ​​each of the sub-microstrip lines (14) is provided with an ion beam coating film (11).

3. The metal microstrip line according to claim 1, characterized in that: Along the thickness direction of the metal microstrip line, the ion beam coating film (11) comprises a substrate (111), a fusion layer (112), a welding layer (113) and a protective layer (114) which are stacked in sequence, and the welding layer (113) is used to be welded to the to-be-connected member after the protective layer (114) is welded.

4. A coating device for coating the metal microstrip line according to any one of claims 1 to 3, characterized in that: The coating device at least comprises a first clamping plate (51) and a second clamping plate (52) connected to the first clamping plate (51); The metal microstrip line is located between the first clamping plate (51) and the second clamping plate (52), and a position on the first clamping plate (51) corresponding to the coating area and a position on the second clamping plate (52) corresponding to the coating area are both provided with ion beam injection ports (53), so that an ion beam is injected through the ion beam injection ports (53) and deposited on the coating area to form the ion beam coating film (11).

5. The coating device according to claim 4, characterized in that The ion beam injection port (53) comprises a main injection port (531) and a scattering port (532) connected to the main injection port (531), at least the main injection port (531) is arranged corresponding to the coating area, and the scattering port (532) extends to the outer edges of the first clamping plate (51) and the second clamping plate (52); Along the direction from the main injection port (531) to the scattering port (532), the inner diameter of the scattering port (532) gradually increases.

6. The coating device according to claim 5, characterized in that The spray direction of the ion beam sprayed onto the coating area through the scattering port (532) and the main spray port (531) is parallel to the plane where the coating area is located; And / or, a volume groove (533) communicating with the main injection port (531) is further provided on a side of the main injection port (531) away from the scattering port (532); And / or, the first clamping plate (51) and the second clamping plate (52) have the same thickness, and the thickness of the first clamping plate (51) ranges from 3 mm to 5 mm; and / or, along the length direction of the first clamping plate (51) or the second clamping plate (52), the size of the main injection port (531) is 4 mm-6 mm; and / or, along the width direction of the first clamping plate (51) or the second clamping plate (52), the depth dimension of the ion beam injection port (53) is 5 mm to 8 mm; And / or, the scattering angle of the scattering port (532) is 40°-50°.

7. The coating device according to claim 4, characterized in that A first stepped structure (511) is provided on one side of the first clamping plate (51) facing the metal microstrip line, the metal microstrip line comprises a plurality of sub-microstrip lines (14) arranged in sequence along the width direction of the first clamping plate (51), each of the sub-microstrip lines (14) being provided with the coating area, and the plurality of sub-microstrip lines (14) being partially overlapped and arranged on the first stepped structure (511); a second stepped structure adapted to the first stepped structure (511) is provided on one side of the second clamping plate (52) facing the metal microstrip line; The ion beam injection port (53) is arranged on the second clamping plate (52), and the ion beam injection port (53) is arranged corresponding to the coating area of ​​each sub-microstrip line (14).

8. The coating device according to claim 7, characterized in that The spraying direction of the ion beam sprayed onto the coating area through the ion beam spraying port (53) is perpendicular to the plane where the coating area is located.

9. The coating device according to claim 4, characterized in that: The first clamping plate (51) and the second clamping plate (52) are arranged in parallel and are both inclined relative to the vertical plane, and the injection direction of the ion beam injected onto the coating area through the ion beam injection port (53) forms an acute angle with the plane where the coating area is located.

10. The coating device according to claim 4, characterized in that The first clamping plate (51) is provided with a first connection hole (512), the second clamping plate (52) is provided with a second connection hole at a position corresponding to the first connection hole (512), and the metal microstrip line is provided with an avoidance hole (15) at a position corresponding to the second connection hole; The first clamping plate (51) is connected to the second clamping plate (52) via a fastener inserted through the first connection hole (512), the second connection hole and the avoidance hole (15), and the metal microstrip line is clamped between the first clamping plate (51) and the second clamping plate (52).

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