Internal matching power slide glass combining ceramic substrate and copper-clad plate

Abstract

The utility model provides an internal matching power slide combining a ceramic substrate and a copper-clad plate, the power tube of the utility model adopts a matching mode combining the ceramic substrate and the copper-clad plate to realize the requirements of miniaturization and high power, the input matching adopts the ceramic substrate to carry out multistage impedance conversion, and the gate end of a GaN HEMT tube core is matched to 50 ohm. The high dielectric constant characteristic of the ceramic substrate realizes miniaturization of input matching; the output matching is realized by adopting a copper-clad plate, the drain end of the GaN HEMT tube core is matched to 50 ohm through a high-low impedance line, and the copper-clad plate has the characteristic of small loss, so that the wide-pulse-width and high-power application requirements can be met. Meanwhile, certain loss is introduced into the matching network, low-frequency gain is reduced, the stability of the amplifier is effectively improved, standing waves are improved, and the bandwidth is expanded. The utility model provides a novel internal matching circuit design method, the size of a high-power device can be effectively reduced, and meanwhile, the device is ensured to have higher efficiency, so that the use of the miniaturized, high-efficiency, low-cost and high-power GaN internal matching power tube is wider.

Description

Technical Field

[0001] The utility model belongs to the field of microwave power amplifiers, in particular to an internal matching power carrier combining a ceramic substrate and a copper-clad plate. Background Art

[0002] As wireless systems such as radar and communications continue to increase their requirements for multifunctionality, high reliability, fast response, anti-interference and mobility of RF front-end modules, miniaturized, high-efficiency and wide-bandwidth microwave power amplifiers have become the current research trend. The first-generation semiconductors represented by Ge and Si and the second-generation semiconductors represented by GaAs can no longer fully meet the system's requirements for high-performance power amplifiers. The third-generation semiconductor materials represented by GaN have the characteristics of wide bandgap, high electron mobility, high breakdown voltage, high thermal conductivity, good chemical stability and strong radiation resistance. Therefore, high electron mobility transistor (GaN HEMT) power devices have the advantages of high operating frequency, high power density, high breakdown voltage and high efficiency, and have become ideal devices for microwave power devices and microwave monolithic integrated circuit applications.

[0003] As a new generation of solid-state microwave power devices, GaN HEMT microwave power devices have been receiving special attention and key development from Europe, the United States, Japan and other countries since their introduction. Western countries have included GaN microwave power devices and MMIC circuit research in a series of strategic technology plans for priority development. In particular, in recent years, the development of foreign GaN HEMT product technology has exceeded expectations. Not only has the performance level of the device been continuously improved, but the engineering application of the device has also become more and more extensive. The International Technology Roadmap for Semiconductors (ITRS-2009) released in 2009 further clarified that GaN HEMT will replace GaAs in power applications below the Ka band between 2013 and 2017. At present, many companies such as Cree, Qorvo, Macom in the United States and Fujitsu in Japan have GaN HEMT power tube products, which focus on base station applications in the L and S bands, and also extend to other frequency bands in and below the Ku band. At present, except for Macom and other companies that focus on the development of GaN HEMT technology based on Si substrates, the rest of the companies use semi-insulating SiC substrates. Compared with Si and GaAs microwave power devices, GaN HEMT has obvious performance advantages. For example, the top-level products of CREE in the United States have reached 1000W in the L band, 500W in the S band, and 200-300W in the C and X bands, and their main maximum operating voltage is 50V-65V. According to the laboratory-level high-voltage products reported by Integra, a single tube working in the P band can achieve an output of 1.1KW at a working voltage of 145V.

[0004] In recent years, the integration of wireless systems has become increasingly higher, and the functions have become more and more complex, but the power consumption and volume of the system have been decreasing, which has put forward new requirements for the miniaturization and high efficiency of components. As an important part of the system transmission channel, the microwave power amplifier accounts for 70% of the power consumption of the components. The high-efficiency output of the power device can effectively reduce the total power consumption of the system; the volume of the power amplifier, especially the final stage power amplifier, is usually relatively large. The internal matching power amplifier effectively reduces the matching circuit area by using a ceramic substrate with a high dielectric constant, thereby reducing the system volume. Utility Model Content

[0005] The utility model aims at the problems in the prior art. The integration of the whole system is getting higher and higher, and the functions of the system are getting more and more complex. The whole unit needs to achieve miniaturization requirements by simplifying the number of component channels, which requires the power amplifier to output greater power and higher efficiency. In order to meet the needs of future communications, power devices need to reach a new level. In recent years, research has mainly pointed to wide bandgap semiconductor devices. The third-generation semiconductor power devices represented by GaN have high current density, high breakdown voltage, and high power density, and have great potential in high-frequency, high-power, and high-efficiency applications. Therefore, the utility model proposes an internally matched power carrier combined with a ceramic substrate and a copper-clad plate, which not only meets the needs of high power and high efficiency, but also can realize device miniaturization, thereby realizing the simplification and miniaturization requirements of the whole channel. At the same time, since the carrier is used to replace the shell and tube packaging, the device cost is greatly reduced, and it has high practicality.

[0006] In order to solve the above technical problems, the utility model provides the following technical solutions: an internal matching power carrier combining a ceramic substrate and a copper-clad plate, comprising: an input matching network including a gate feeding part connected in sequence, a GaNHEMT die arranged in parallel, and an output matching network including a drain feeding part;

[0007] The input matching network is connected to the gate terminal of the GaN HEMT die to form a resonant network, achieving resonance within the fundamental frequency band, making the input impedance close to the optimal efficiency point within a wider frequency band, and improving the input impedance of the GaN HEMT die;

[0008] The drain end of the GaN HEMT die is connected to the output matching network through several gold wires, and the output matching network is implemented using a copper-clad board with a multi-section stepped impedance transformation structure.

[0009] Furthermore, the aforementioned input matching network uses two identical L in1 -C in -L in2 The T-type matching network is connected in parallel to the input port RFin, L in1 -C in -L in2The T-type matching network includes the first-stage inductor L in1 , the second-stage inductor L in2 , resistor R in1 , capacitor C1, capacitor C in , resistor R in2 ;

[0010] The second stage inductor L in2 One end of the second stage inductor L is connected to the input port RFin. in2 The other end of the resistor R in2 One end of the first inductor L in1 One end and capacitor C in One end of the first stage inductor L in1 The other end of the resistor R in1 One of the sections is connected to the resistor R in1 The other end of the resistor R is connected to the gate end of the GaN HEMT die as the output end of the input matching network; in2 The other end of the capacitor is connected to one end of the capacitor C1, and the other end of the capacitor C1 and the input port RFin are connected to the load. in The other end is grounded.

[0011] Furthermore, the aforementioned output feed network includes a quarter-wavelength line, a low-resistance line, a high-resistance line, a decoupling module, and a filtering module, a series circuit, a capacitor C7, and a resistor R2;

[0012] One end of the quarter-wavelength line is connected to one end of the low-resistance line, and the connected end is connected to the drain end of the GaN HEMT die, and the other end of the quarter-wavelength line is connected to the decoupling module, the filtering module, and the series circuit respectively; the series circuit is grounded;

[0013] The other end of the low-resistance line is connected to the high-resistance line, the capacitor C7, and the output port RFout in sequence, and the output port RFout is connected to a load.

[0014] Furthermore, the aforementioned decoupling module includes a capacitor C2 and a capacitor C3, one end of the capacitor C2 is connected to the other end of the quarter-wavelength line and one end of the capacitor C3, and the other end of the capacitor C2 and the other end of the capacitor C3 are grounded.

[0015] Furthermore, the aforementioned filtering module includes a capacitor C4 and a capacitor C5, one end of the capacitor C4 is connected to one end of the capacitor C5, and the connected end is connected to the decoupling module; the other end of the capacitor C4 and the other end of the capacitor C5 are grounded.

[0016] Furthermore, the aforementioned series circuit includes a resistor R1 and a capacitor C6, one end of the resistor R1 serves as an input end of the series circuit, the other end of the resistor R1 is connected to one end of the capacitor C6, and the other end of the capacitor C6 is grounded.

[0017] Furthermore, the aforementioned internally matched power carrier combining a ceramic substrate and a copper-clad laminate matches the input and output impedances of the GaN HEMT core to 50Ω through internal matching technology, thereby achieving broadband, high-power, miniaturization, and high-efficiency performance of the power tube; the input matching network adopts distributed component matching, and the matching components are manufactured on an alumina ceramic substrate.

[0018] Furthermore, the drain end of the aforementioned GaN HEMT tube core is interconnected with the output matching network through a plurality of φ38um gold wires with preset length and curvature; the GaN HEMT tube core is manufactured on a SiC substrate, and the capacitor C1 adopts a lumped element MOS capacitor.

[0019] Furthermore, the first-stage inductor L in1 A φ25um gold wire with a preset length and curvature is used to reduce the size of the matching circuit. The second-stage inductor L in2 Using high dielectric constant alumina ceramic equivalent, capacitor C in Using high dielectric constant alumina ceramic equivalent; resistance R in1 , resistor R in2 All of them use thin film resistors, which are lumped components.

[0020] Furthermore, the aforementioned resistor R in1 is the lumped resistance, and the capacitance C in At the same time, it is made on a high dielectric constant alumina ceramic, the resistor R in1 Used to adjust the gain of the device and improve stability; resistor R in2 Used for power feeding, reducing the circuit area of ​​the feeding network and realizing the miniaturization design of the input matching network.

[0021] Compared with the prior art, the beneficial technical effects of the above technical solution adopted by the present invention are as follows:

[0022] Since the input matching network adopts distributed element matching, the matching elements are made on the alumina ceramic substrate, and the input feed network is realized by the resistor Rin2, the size of the input matching network can be greatly reduced, miniaturization and stability can be achieved. The output matching network is made of a copper-clad board with a high dielectric constant. The dielectric board with a high dielectric constant can effectively reduce the circuit size and realize the miniaturization of the device. At the same time, the copper-clad board of the same size is cheap and can effectively reduce the cost. The utility model not only realizes the miniaturization and high-efficiency design of high-power devices, but also can realize a low-cost solution.

[0023] The utility model adopts a distributed resonant network to match the gate end of the miniaturized high-efficiency GaN internal matching power carrier, and a copper-clad plate to achieve the drain end, and realizes the broadband miniaturized high-efficiency output of a single power device through high and low impedance lines. This miniaturized high-efficiency GaN internal matching power carrier can effectively reduce the system volume and reduce the system power consumption under the premise that the system requires the same output power, realize the system miniaturization and low power consumption requirements, and at the same time reduce the system cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 The utility model is a structural diagram of an internally matched power carrier combining a ceramic substrate and a copper-clad plate.

[0025] Figure 2 The utility model is a schematic diagram of an internal matching power carrier circuit combining a ceramic substrate and a copper-clad plate.

[0026] Figure 3 This is a test result diagram of the output characteristics of an internally matched power carrier chip combining a ceramic substrate and a copper-clad laminate according to the utility model. DETAILED DESCRIPTION

[0027] In order to better understand the technical content of the present invention, specific embodiments are described below in conjunction with the accompanying drawings.

[0028] Various aspects of the utility model are described in the present invention with reference to the accompanying drawings, in which many illustrative embodiments are shown. The embodiments of the present invention are not limited to those described in the accompanying drawings. It should be understood that the present invention is implemented by any of the various concepts and embodiments introduced above, as well as the concepts and embodiments described in detail below, because the concepts and embodiments disclosed in the utility model are not limited to any implementation. In addition, some aspects disclosed in the utility model can be used alone or in any appropriate combination with other aspects disclosed in the utility model.

[0029] Although the present invention has been described above with preferred embodiments, it is not intended to limit the present invention. A person with ordinary knowledge in the technical field to which the present invention belongs may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the definition of the claims.

[0030] refer to Figure 1 The utility model provides an internal matching power carrier combined with a ceramic substrate and a copper clad plate, and its structure diagram is shown in Figure 1 As shown, the size of the carrier is 30mm×30mm, in which the input matching network adopts a distributed resonant matching network for matching. The matching components are made on an alumina ceramic substrate, and the first-stage inductor L is distributed near the gate end of the two-cell GaN HEMT core.in1 Resistor R in1 With capacitor C in Form a resonant network by optimizing the first-stage inductor L in1 , resistor R in1 , capacitor C in The value of can achieve resonance in the fundamental frequency band, which can increase the circuit bandwidth, improve the input standing wave, improve the circuit stability, increase the GaNHEMT gate impedance, and facilitate broadband impedance matching for large gate width GaN HEMT devices. in1 The gold wire can be used to reduce the size of the input matching circuit and realize miniaturization. The output matching network is made of copper-clad laminate with high dielectric constant, which can effectively reduce the circuit size and realize device miniaturization. At the same time, copper-clad laminate has the advantages of low dielectric loss and low price, which can realize high efficiency and low-cost design of internal matching devices.

[0031] Figure 2 The utility model provides an internal matching power carrier chip combining a ceramic substrate and a copper-clad plate, comprising: an input matching network including a gate feeding part connected in sequence, a GaN HEMT die arranged in parallel, and an output matching network including a drain feeding part;

[0032] The input matching network is connected to the gate terminal of the GaN HEMT die to form a resonant network, achieving resonance within the fundamental frequency band, making the input impedance close to the optimal efficiency point within a wider frequency band, and improving the input impedance of the GaN HEMT die;

[0033] The drain end of the GaN HEMT die is connected to the output matching network through several gold wires, and the output matching network is implemented using a copper-clad board with a multi-section stepped impedance transformation structure.

[0034] The input matching network uses two identical L in1 -C in -L in2 The T-type matching network is connected in parallel to the input port RFin, L in1 -C in -L in2 The T-type matching network includes the first-stage inductor L in1 , the second-stage inductor L in2 , resistor R in1 , capacitor C1, capacitor C in , resistor R in2 ;

[0035] The second stage inductor L in2 One end of the second stage inductor L is connected to the input port RFin. in2 The other end of the resistor R in2 One end of the first inductor Lin1 One end and capacitor C in One end of the first stage inductor L in1 The other end of the resistor R in1 One of the sections is connected to the resistor R in1 The other end of the resistor R is connected to the gate end of the GaN HEMT die as the output end of the input matching network; in2 The other end of the capacitor is connected to one end of the capacitor C1, and the other end of the capacitor C1 and the input port RFin are connected to the load. in The other end is grounded.

[0036] The output feed network includes a quarter-wavelength line, a low-resistance line, a high-resistance line, a decoupling module, and a filter module, a series circuit, a capacitor C7, and a resistor R2;

[0037] One end of the quarter-wavelength line is connected to one end of the low-resistance line, and the connected end is connected to the drain end of the GaN HEMT die, and the other end of the quarter-wavelength line is connected to the decoupling module, the filtering module, and the series circuit respectively; the series circuit is grounded; the other end of the low-resistance line is connected to the high-resistance line, the capacitor C7, and the output port RFout in sequence, and the output port RFout is connected to the load.

[0038] The decoupling module includes a capacitor C2 and a capacitor C3, one end of the capacitor C2 is connected to the other end of the quarter-wavelength line and one end of the capacitor C3, and the other end of the capacitor C2 and the other end of the capacitor C3 are grounded.

[0039] The filter module includes a capacitor C4 and a capacitor C5. One end of the capacitor C4 is connected to one end of the capacitor C5, and the connected end is connected to the decoupling module. The other end of the capacitor C4 and the other end of the capacitor C5 are grounded.

[0040] The series circuit includes a resistor R1 and a capacitor C6, one end of the resistor R1 serves as an input end of the series circuit, the other end of the resistor R1 is connected to one end of the capacitor C6, and the other end of the capacitor C6 is grounded.

[0041] In order to achieve broadband high-power output, a twin-cell GaN HEMT die is used in this example. The gate width of each GaN die is 40mm. Under the drain operating voltage of 40V, the output power density of the chip reaches 5.6W / mm. Therefore, the output impedance of the GaN HEMT die is very small, only a few tenths of an ohm. It is very difficult to directly match it to 50 ohms, and the circuit is extremely unstable. In the utility model, two-cell GaN HEMT die are made on a SiC substrate, and a distributed inductor L is used near the gate end of the die. in1 , series resistance R in1 , and ceramic capacitor C inThe capacitor forms a resonant network, which effectively improves the circuit bandwidth, while also improving the circuit stability, improving the circuit standing wave, and increasing the GaN HEMT gate impedance, which is beneficial for further matching low impedance to high impedance.

[0042] The power tube is synthesized by a twin-cell GaN HEMT tube core to achieve output. The larger the gate width of the tube core, the lower the input and output impedance of the GaN HEMT device, and the more difficult it is to perform impedance matching. The input matching network in the utility model adopts distributed component matching, and the matching components are made on an alumina ceramic substrate. The output matching network adopts a multi-section stepped impedance transformation structure to achieve broadband matching, and is fed through a quarter-wavelength line of the fundamental frequency. The quarter-wavelength line feeding can suppress the second harmonic and improve the power added efficiency of the internal matching device.

[0043] The matching circuit is realized by a copper-clad board with a high dielectric constant; the input matching network adopts a resonant network matching form, and an inductor L is used near the gate end of the GaN HEMT core. in1 Resistor R in1 With capacitor C in Form a resonant network by optimizing L in1 , R in1 , C in The value of realizes resonance within the fundamental frequency band, making the input impedance close to the optimal efficiency point within a wider frequency band, and at the same time improving the device stability and the GaN HEMT input impedance. The impedance improvement is conducive to broadband impedance matching for large gate width GaN HEMT devices and realizing higher performance microwave power devices; output matching is achieved through a high dielectric constant copper clad board, which reduces circuit losses and improves efficiency, while realizing miniaturization design.

[0044] First, in order to achieve miniaturization, high power and high efficiency output, the utility model selects GaN HEMT devices with the advantages of high breakdown electric field, high thermal conductivity and high power density. This power device can operate at a higher voltage (≥48V), has higher power density and higher heat dissipation capacity, and provides design guarantees for achieving miniaturization and high efficiency output.

[0045] Secondly, a new type of matching form is selected to achieve miniaturization of the power tube and broadband high-power output. The input matching network is implemented using distributed components. The matching components are made on an alumina ceramic substrate and distributed inductors L are used near the gate end of the GaN HEMT core. in1 , capacitor C in1 With inductance L in2 The impedance is matched to 50 ohms, and the resistor R in1The gain can be adjusted and the device stability can be improved. The output matching network is implemented with a copper-clad board with a multi-section stepped impedance transformation structure, which can reduce matching losses and improve device efficiency. Two GaN HEMT tube cores are arranged in parallel, and the tube core drain end is interconnected with the output matching network through several gold wires. The traditional internal matching and external matching structures are combined to form an internal matching device that can take into account miniaturization and high-efficiency and high-power indicators. At the same time, the carrier-free packaging structure is adopted, which can effectively reduce the device cost.

[0046] In addition, the input matching network adopts a multi-stage impedance transformation structure to achieve broadband matching. in1 As a lumped resistor, the gate impedance of the GaN HEMT die can be increased, making matching easier. Then L in1 -C in -L in2 The T-type matching network matches the impedance to 50 ohms, and at the same time, the resistor R in2 The input matching network uses an inductor L in1 Through the gold wire, the inductor L in2 Using high dielectric constant alumina ceramic equivalent, capacitor C in The use of ceramic equivalent with relatively high dielectric constant can further reduce the size of the matching circuit and facilitate miniaturization. in1 A φ25um gold wire with a certain length and curvature is used to reduce the size of the matching circuit and realize device miniaturization. The second-stage inductor L in2 Using high dielectric constant (dielectric constant 38) alumina ceramic equivalent, capacitor C in Alumina ceramic with high dielectric constant (dielectric constant 85) is used as equivalent. in1 The gain of the device can be adjusted to improve stability; the device is connected through the resistor R in2 Feeding can effectively reduce the circuit area of ​​the feeding network and realize the miniaturization design of the input matching network.

[0047] The output matching network is made of copper-clad laminate with high dielectric constant. The dielectric laminate with high dielectric constant can effectively reduce the circuit size and realize the miniaturization of the device. At the same time, the copper-clad laminate of the same size is cheap, which can effectively reduce the cost. in2 Feeding with resistors can also improve the stability of the device. C1 is used for decoupling and filtering. Capacitor C1 uses a lumped element MOS capacitor. The output feeding network is fed through a quarter-wavelength line, and chip capacitors C2 and C3 are used for decoupling. Chip capacitors C4 and C5 are used for low-frequency filtering. The series circuit composed of resistor R1 and capacitor C6 is connected to the ground to improve circuit stability.

[0048] like Figure 3 The figure shows the output power and additional efficiency characteristic test curve of the device in the utility model when the drain voltage VD is equal to 40V (pulse width 15ms, duty cycle 40%). It can be seen from the figure that the output power is greater than 400W (56dBm) and the additional efficiency is greater than 72% in the frequency band range of 1.15GHz to 1.45GHz.

[0049] In summary, the utility model designs an internal matching power carrier combining a ceramic substrate and a copper clad board. The input network of this new GaN internal matching power carrier adopts distributed component matching, and the matching components are made on an alumina ceramic substrate. The gate end improves the gate end input impedance by introducing an LRC resonant network, while further improving the core stability, expanding the bandwidth, and realizing stable output of a single power device within a wide band. The output matching network is made of a copper clad board with a high dielectric constant, which can effectively reduce the circuit size, realize device miniaturization and improve device performance, and can also effectively reduce costs.

[0050] Although the present invention has been described above with preferred embodiments, it is not intended to limit the present invention. A person with ordinary knowledge in the technical field to which the present invention belongs may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the definition of the claims.

Claims

1. An internally matched power carrier combining a ceramic substrate and a copper-clad laminate, characterized in that: include: An input matching network including a gate feed portion connected in sequence, a GaN HEMT die arranged in parallel, and an output matching network including a drain feed portion; The input matching network is connected to the gate terminal of the GaN HEMT die to form a resonant network, achieving resonance within the fundamental frequency band, making the input impedance close to the optimal efficiency point within a wider frequency band, and improving the input impedance of the GaN HEMT die; The drain end of the GaN HEMT die is connected to the output matching network through several gold wires, and the output matching network is implemented using a copper-clad board with a multi-section stepped impedance transformation structure.

2. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 1, characterized in that: The input matching network uses two identical L in1 -C in -L in2 The T-type matching network is connected in parallel to the input port RFin, L in1 -C in -L in2 The T-type matching network includes the first-stage inductor L in1 , the second-stage inductor L in2 , resistor R in1 , capacitor C1, capacitor C in , resistor R in2 ; The second stage inductor L in2 One end of the second stage inductor L is connected to the input port RFin. in2 The other end of the resistor R in2 One end of the first-stage inductor L in1 One end and capacitor C in One end of the first stage inductor L in1 The other end of the resistor R in1 One of the sections is connected to the resistor R in1 The other end of the resistor R is connected to the gate end of the GaN HEMT die as the output end of the input matching network; in2 The other end of the capacitor is connected to one end of the capacitor C1, and the other end of the capacitor C1 and the input port RFin are connected to the load. in The other end is grounded.

3. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 2, characterized in that: The output feed network includes a quarter-wavelength line, a low-resistance line, a high-resistance line, a decoupling module, and a filter module, a series circuit, a capacitor C7, and a resistor R2; One end of the quarter-wavelength line is connected to one end of the low-resistance line, and the connected end is connected to the drain end of the GaN HEMT die, and the other end of the quarter-wavelength line is connected to the decoupling module, the filtering module, and the series circuit respectively; the series circuit is grounded; The other end of the low-resistance line is connected to the high-resistance line, the capacitor C7, and the output port RFout in sequence, and the output port RFout is connected to a load.

4. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 3, characterized in that: The decoupling module includes a capacitor C2 and a capacitor C3. One end of the capacitor C2 is connected to the other end of the quarter-wavelength line and one end of the capacitor C3. The other end of the capacitor C2 and the other end of the capacitor C3 are grounded.

5. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 4, characterized in that: The filter module includes a capacitor C4 and a capacitor C5. One end of the capacitor C4 is connected to one end of the capacitor C5, and the connected end is connected to the decoupling module. The other end of the capacitor C4 and the other end of the capacitor C5 are grounded.

6. The internal matching power carrier combining a ceramic substrate and a copper clad plate according to claim 5, characterized in that: The series circuit includes a resistor R1 and a capacitor C6. One end of the resistor R1 serves as an input end of the series circuit. The other end of the resistor R1 is connected to one end of the capacitor C6. The other end of the capacitor C6 is grounded.

7. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 1, characterized in that: The input and output impedance of the GaN HEMT die are matched to 50Ω through internal matching technology, achieving broadband, high-power, miniaturization and high-efficiency performance of the power tube; the input matching network adopts distributed component matching, and the matching components are made on an alumina ceramic substrate.

8. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 2, characterized in that: The drain end of the GaN HEMT tube core is interconnected with the output matching network through a number of φ38um gold wires with preset length and curvature; the GaN HEMT tube core is manufactured on a SiC substrate, and the capacitor C1 adopts a lumped element MOS capacitor.

9. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 2, characterized in that: The first stage inductor L in1 A φ25um gold wire with a preset length and curvature is used to reduce the size of the matching circuit. The second-stage inductor L in2 Using high dielectric constant alumina ceramic equivalent, capacitor C in Using high dielectric constant alumina ceramic equivalent; resistance R in1 , resistor R in2 All of them use thin film resistors, which are lumped components.

10. The internal matching power carrier combining a ceramic substrate and a copper clad laminate according to claim 2, characterized in that: Resistor R in1 is the lumped resistance, and the capacitance C in At the same time, it is made on a high dielectric constant alumina ceramic, the resistor R in1 Used to adjust the gain of the device and improve stability; resistor R in2 Used for power feeding, reducing the circuit area of ​​the feeding network and realizing the miniaturization design of the input matching network.

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