Novel optical waveguide structure in silicon photonics system
The novel optical waveguide structure with a metal shielding layer addresses environmental vulnerabilities in silicon photonics by shielding against external interference and moisture, enhancing reliability and stability.
Patent Information
- Application Number
- CN202323489206.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-21
- Publication Date
- 2024-12-20
- Estimated Expiration
- 2033-12-21
AI Technical Summary
The existing silicon optical waveguides in silicon photonics systems are susceptible to environmental factors such as moisture and outgassing, which affect reliability and light signal transmission, and are vulnerable to external electromagnetic interference.
A novel optical waveguide structure with a metal shielding layer that includes a silicon core, silicon oxide layers, and a metal shielding layer to protect against external interference, moisture, and outgassing, while providing thermal insulation and heat dissipation.
The metal shielding layer effectively shields against external interference, maintains refractive index stability, and enhances reliability by preventing moisture and outgassing, ensuring stable light signal transmission.
Smart Images
Figure CN222212997U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a novel optical waveguide structure in a silicon photonics system. Background Art
[0002] Silicon photonics, or SiPH, is designed and manufactured by semiconductor process, including integrated integrated circuit (EIC) and integrated photonic circuit (PIC). In the integrated photonic circuit (PIC), the optical signal transmission in the chip uses a light-guiding line, called an optical waveguide. The current structure of silicon optical waveguide is as follows: Figure 1 As shown in the figure, light waves are transmitted in the silicon core. When light waves travel from the silicon core to the overcladding SiO2 / SiON, total reflection of the light waves will occur because the light waves travel from the high refractive index 3.48 of the silicon core to the low refractive index 1.5 of the overcladding. This will limit the transmission of the light signal in the silicon core.
[0003] However, the electro-optic modulator in the prior art has the following defects: moisture in the external environment can affect the reliability of the silicon optical waveguide. Figure 2 The silicon optical waveguide shown is placed in an environment with 80% humidity. As the placement time increases, the light flux decreases significantly. In a vacuum environment, the materials used to build silicon photonic waveguide components will produce out gassing. In addition, NASA reports that the challenge of silicon photonics in space is to avoid sensitivity to outgassing materials; therefore, a new design is proposed to improve the above problem. Utility Model Content
[0004] The utility model aims to overcome the above-mentioned shortcomings and provide a technical solution that can solve the above-mentioned problems.
[0005] A novel optical waveguide structure in a silicon photonics system, including an integrated optical circuit,
[0006] In the integrated optical circuit part, the silicon base layer is grown using semiconductor process technology;
[0007] In the integrated optical circuit part, a silicon oxide layer is grown on the silicon base layer using semiconductor process technology;
[0008] In the integrated optical circuit part, a silicon core layer for exposure and etching is arranged on the silicon oxide layer by using semiconductor process technology;
[0009] In the integrated optical circuit part, a silicon oxide capping layer for exposure and etching is vapor-deposited on the outer surface of the silicon core layer using semiconductor process technology;
[0010] In the integrated optical circuit part, a metal shielding layer for exposure and etching is deposited on the outer surface of the silicon oxide cover layer using semiconductor process technology.
[0011] Preferably, the silicon core layer is provided in the integrated optical circuit part, and single crystal silicon is epitaxially grown on the silicon oxide layer by semiconductor process technology, and the silicon core layer is manufactured after the single crystal silicon is exposed and etched.
[0012] Preferably, the silicon oxide capping layer is made of silicon dioxide material.
[0013] Preferably, the metal shielding layer is made of titanium nitride, tantalum nitride or copper material.
[0014] Preferably, the thickness of the silicon oxide layer is 200 nm-3000 nm.
[0015] Preferably, the silicon core layer has a width of 200nm-3000nm and a height of 200nm-3000nm.
[0016] Preferably, the thickness of the silicon oxide capping layer is 100 nm-200 nm.
[0017] Preferably, the thickness of the metal shielding layer is 20nm-100nm.
[0018] Compared with the prior art, the beneficial effects of the utility model are:
[0019] The utility model proposes a novel structure design of an optical waveguide, which includes an outer metal shielding layer. The metal shielding layer can protect the single-mode optical signal from the mutual cross-coupling between the silicon photonic integrated optical circuits and the intrusive coupling of external signals, such as the coupling of electromagnetic waves in the universe, because the metal shielding layer can absorb or reflect the external light waves and electromagnetic waves, and prevent them from entering the optical waveguide from the outside to interfere with the real transmission optical signal; it can also provide heat dissipation and thermal insulation effects, and prevent the thermal effect generated by the external environment or circuit operation from affecting the refractive index of the silicon optical waveguide; the metal shielding layer can also isolate water vapor, and prevent the water vapor in the external environment from affecting the reliability of the silicon optical waveguide; it can prevent the construction materials of the silicon photonic waveguide element in the vacuum environment from outgassing.
[0020] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.
[0022] Figure 1 It is a structural schematic diagram of the optical waveguide structure of the prior art;
[0023] Figure 2 It is a curve chart showing the change of light flux over time when the prior art silicon optical waveguide is placed in an environment with 80% humidity;
[0024] Figure 3 It is a structural schematic diagram of the utility model.
[0025] The reference numerals and names in the figures are as follows:
[0026] A silicon-based layer 10 , a silicon oxide layer 20 , a silicon core layer 30 , a silicon oxide capping layer 40 , and a metal shielding layer 50 . DETAILED DESCRIPTION
[0027] The technical solutions in the embodiments of the present invention are described clearly and completely below. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0028] See also Figure 3 In an embodiment of the utility model, a novel optical waveguide structure in a silicon photonics system includes an integrated optical circuit,
[0029] In the integrated optical circuit part, a silicon base layer 10 is grown using semiconductor process technology;
[0030] In the integrated optical circuit part, a silicon oxide layer 20 is grown on the silicon base layer 10 using semiconductor process technology, and the thickness of the silicon oxide layer 20 is 200nm-3000nm;
[0031] In the integrated optical circuit part, a single crystal silicon is epitaxially grown on the silicon oxide layer 20 by using semiconductor process technology. After the single crystal silicon is exposed and etched, a silicon core layer 30 is manufactured. The width of the silicon core layer 30 is 200nm-3000nm and the height is 200nm-3000nm.
[0032] In the integrated optical circuit part, a silicon oxide capping layer 40 for exposure and etching is vapor-deposited on the outer surface of the silicon core layer 30 by semiconductor process technology. The silicon oxide capping layer 40 is made of silicon dioxide material and has a thickness of 100nm-200nm.
[0033] In the integrated optical circuit part, a metal shielding layer 50 for exposure and etching is deposited on the outer surface of the silicon oxide cover layer 40 by semiconductor process technology. The thickness of the metal shielding layer 50 is 20nm-100nm.
[0034] The utility model proposes a novel structure design of optical waveguide, including an outer metal shielding layer 50, which can protect the single-mode optical signal from the cross-coupling between the silicon photonic integrated optical circuits and the intrusive coupling of external signals, such as the coupling of electromagnetic waves in the universe. Because the metal shielding layer 50 can absorb or reflect the external light waves and electromagnetic waves, it can prevent them from entering the optical waveguide from the outside and interfering with the real transmission optical signal; it can also provide heat dissipation and insulation effects to prevent the thermal effects generated by the external environment or circuit operation from affecting the refractive index of the silicon optical waveguide; the metal shielding layer 50 can also isolate water vapor to prevent the water vapor in the external environment from affecting the reliability of the silicon optical waveguide; it can prevent the construction materials of the silicon photonic waveguide element in the vacuum environment from outgassing.
[0035] It is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or basic features of the present invention. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims are included in the present invention.
Claims
1. A novel optical waveguide structure in a silicon photonics system, comprising an integrated optical circuit, characterized in that: In the integrated optical circuit part, the silicon base layer is grown using semiconductor process technology; In the integrated optical circuit part, a silicon oxide layer is grown on the silicon base layer using semiconductor process technology; In the integrated optical circuit part, a silicon core layer for exposure and etching is arranged on the silicon oxide layer by using semiconductor process technology; In the integrated optical circuit part, a silicon oxide capping layer for exposure and etching is vapor-deposited on the outer surface of the silicon core layer using semiconductor process technology; In the integrated optical circuit part, a metal shielding layer for exposure and etching is deposited on the outer surface of the silicon oxide cover layer using semiconductor process technology.
2. A novel optical waveguide structure in a silicon photonics system according to claim 1, characterized in that: The silicon core layer is provided in the integrated optical circuit part, and single crystal silicon is epitaxially grown on the silicon oxide layer using semiconductor process technology, and the silicon core layer is manufactured after the single crystal silicon is exposed and etched.
3. The novel optical waveguide structure in a silicon photonics system according to claim 1, characterized in that: The silicon oxide capping layer is made of silicon dioxide material.
4. The novel optical waveguide structure in a silicon photonics system according to claim 1, characterized in that: The metal shielding layer is made of titanium nitride, tantalum nitride or copper material.
5. The novel optical waveguide structure in a silicon photonics system according to claim 1, characterized in that: The thickness of the silicon oxide layer is 200nm-3000nm.
6. The novel optical waveguide structure in a silicon photonics system according to claim 1, characterized in that: The width of the silicon core layer is 200nm-3000nm, and the height is 200nm-3000nm.
7. The novel optical waveguide structure in a silicon photonics system according to claim 1, characterized in that: The thickness of the silicon oxide capping layer is 100nm-200nm.
8. The novel optical waveguide structure in a silicon photonics system according to claim 1, characterized in that: The thickness of the metal shielding layer is 20nm-100nm.