Ion beam rectifying device

Abstract

An ion beam rectifying device comprises a vacuum chamber, the vacuum chamber is large in size and can contain one or more magnetic cavity units, a rectifying channel allowing a plasma beam to pass through is arranged between two magnetic cavities in each magnetic cavity unit in advance, rectifying magnets are arranged in the magnetic cavities, and the rectifying magnets are arranged in the rectifying channels. Plasma beams entering the magnetic cavity from the entrance port can be accurately rectified, and the path and the form of the plasma beams are optimized; more importantly, because the vacuum cavity of the ion beam rectifying device has a large space, sufficient space can be provided for installation of other auxiliary equipment, and the ion beam rectifying device has high functionality and application flexibility.

Description

Technical Field

[0001] The embodiment of the utility model relates to the field of semiconductor technology, and in particular to an ion beam rectifying device. Background Art

[0002] In the field of semiconductor manufacturing, the performance and precision of equipment are crucial to the production of high-quality semiconductor products. Semiconductor equipment not only requires high reliability and stability, but also needs to adapt to growing process requirements, such as larger wafer sizes and more complex integrated circuit designs. As semiconductor processes continue to evolve, from 8-inch wafers to 18-inch wafers, equipment must also be upgraded to maintain process efficiency and economy. Therefore, the design and functional innovation of semiconductor equipment is crucial to meeting the ever-changing needs of the industry.

[0003] Due to the development of advanced process technology, ion implantation equipment is indispensable for the manufacture of modern integrated circuits. In ion implantation equipment, the ion beam rectifier plays a key role. Among them, the quadrupole magnet is particularly important for ensuring the precise rectification of the plasma beam. However, due to the limitations of the vacuum chamber manufacturing process and electrical connections, the quadrupole magnet cannot be placed directly in the vacuum chamber. Utility Model Content

[0004] The problem solved by the embodiments of the utility model is to provide an ion beam rectifying device for adjusting the shape of a plasma beam.

[0005] To solve the above problems, an embodiment of the utility model provides an ion beam rectifying device for rectifying a plasma beam, characterized in that it includes: a vacuum chamber; one or more magnetic chamber units, which are arranged in the vacuum chamber at intervals along a preset beam path direction, each of the magnetic chamber units includes two magnetic chambers, the two magnetic chambers are arranged side by side and are respectively located on both sides of the beam path, and a rectifying channel is formed between the magnetic chambers; a rectifying magnet is arranged in the magnetic chamber; an exit port and an entrance port are respectively located at the two ends of the preset beam path in the vacuum chamber.

[0006] Optionally, the rectifying magnet includes a first magnet, a second magnet and a third magnet which are arranged at intervals in the preset beam path direction.

[0007] Optionally, the angle between two magnetic cavities included in one or more of the magnetic cavity units is less than 10 degrees.

[0008] Optionally, the number of the magnetic cavity units is one, the number of the rectifier magnets is multiple, and the multiple rectifier magnets are simultaneously arranged in one magnetic cavity unit; or, the number of the magnetic cavity units and the rectifier magnets are multiple, and the number of the magnetic cavity units is the same as the number of the rectifier magnets, and a rectifier magnet is arranged in each of the magnetic cavity units; or, the number of the magnetic cavity units is multiple, and the number of the rectifier magnets is more than the number of the magnetic cavity units, and the multiple rectifier magnets are unequally distributed in the multiple magnetic cavity units.

[0009] Optionally, the vacuum chamber is in the form of a cuboid, and comprises: a first side wall, the first side wall is arranged along the beam path direction, one or more spaced through holes are arranged on the first side wall, and a substrate is arranged on each of the through holes.

[0010] Optionally, the vacuum chamber further includes: a reinforcing rib located at the bottom of the first side wall between adjacent through holes.

[0011] Optionally, the ion beam straightening device includes: a substrate sealing ring, located between the outer area of ​​the through hole on the first side wall and the substrate; an opening is provided at one end of the magnetic cavity; the ion beam straightening device includes: a magnetic cavity sealing ring, located between the end of the opening in the magnetic cavity and the substrate.

[0012] Optionally, the rectifying magnet includes a bracket; a through substrate opening is provided on the substrate; the bracket of the rectifying magnet extends out of the substrate opening and is fixedly connected to the substrate.

[0013] Optionally, the vacuum chamber comprises: a first side wall, the first side wall is arranged along the beam path direction, and the one or more magnetic cavity units are directly arranged on the first side wall.

[0014] Optionally, the ion beam rectifying device further includes: a graphite piece, a beam current measuring device, a vacuum measuring device and a negative pressure generating device, which are placed on the inner wall of the vacuum chamber or embedded on the side wall of the vacuum chamber.

[0015] Compared with the prior art, the technical solution of the embodiment of the utility model has the following advantages:

[0016] The vacuum chamber of the ion beam rectifying device provided by the embodiment of the utility model has a large volume and can accommodate one or more magnetic chamber units, and a rectifying channel for allowing the plasma beam to pass is pre-arranged between the two magnetic chambers in each magnetic chamber unit, and the rectifying magnet is arranged in the magnetic chamber, which can accurately rectify the plasma beam entering the magnetic chamber from the incident port and optimize its path and shape; more importantly, because the vacuum chamber of the ion beam rectifying device has a large space, it can also provide sufficient space for the installation of other auxiliary equipment, so that the ion beam rectifying device has strong functionality and application flexibility. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the structure of an ion beam rectifying device;

[0018] Figure 2 It is a schematic diagram of the structure of an exploded view of an ion beam rectifying device;

[0019] Figure 3 It is a structural schematic diagram of an axonometric view of an ion beam rectifying device according to an embodiment of the utility model;

[0020] Figure 4 It is an exploded schematic diagram of a magnetic cavity unit and a rectifying magnet in an ion beam rectifying device according to an embodiment of the utility model;

[0021] Figure 5 It is a schematic diagram of an exploded view of a vacuum chamber and a substrate in an ion beam rectifying device according to an embodiment of the utility model;

[0022] Figure 6 A schematic top view of the ion beam rectifying device of the utility model embodiment when the ion beam rectifying device is working;

[0023] Figure 7 The present invention is a front view schematic diagram of the ion beam rectifying device of the embodiment of the utility model when the ion beam rectifying device is working. DETAILED DESCRIPTION

[0024] As can be seen from the background technology, the vacuum chamber design in the prior art has certain limitations. In particular, in order to ensure sufficient structural strength, the chamber wall is often thickened, which inevitably leads to a reduction in the internal space. The internal space of the vacuum chamber is small, and the quadrupole magnet cannot be placed directly in the vacuum chamber. In addition, the narrow space limits the installation of auxiliary equipment, thereby affecting the functionality and reliability of the ion beam rectifying device. Now, in combination with an ion beam rectifying device, the reasons for the limitations of the existing vacuum chamber design are analyzed.

[0025] In the prior art, reference Figure 1 to Figure 2 , Figure 1 This is a schematic diagram of the structure of an ion beam rectifying device. Figure 2It is a structural schematic diagram of an exploded view of an ion beam rectifying device.

[0026] An ion beam rectifying device, for rectifying a plasma beam, comprises: a vacuum chamber 1, for providing a vacuum environment; an inlet 2, arranged at one end of the vacuum chamber 1, for allowing the plasma beam to enter the vacuum chamber 1; a plurality of groups of magnet units, arranged at intervals outside the vacuum chamber 1 along a direction of a preset beam path, each group of magnet units comprising two magnets, and the two magnets are respectively located on both sides of the vacuum chamber 1, for forming a magnetic field inside the vacuum chamber 1; an outlet 4, for ejecting the rectified plasma beam out of the vacuum chamber 1, the outlet 4 and the inlet 2 are respectively located at two ends of a preset beam path in the vacuum chamber 1.

[0027] Specifically, the magnet unit includes: a first magnet group 31, close to the incident port 2, the two first magnets 31a of the first magnet group 31 are respectively located on both sides of the vacuum chamber 1, and are used to generate a first magnetic field in the beam path; a second magnet group 32, located on the side of the first magnet group 31 away from the incident port 2, and spaced apart from the first magnet group 31, the two second magnets 32a of the second magnet group 32 are respectively located on both sides of the vacuum chamber 1, and are used to generate a second magnetic field in the beam path; a third magnet group 33, located on the side of the second magnet group 32 away from the first magnet group 31, and spaced apart from the second magnet group 32, the two third magnets 33a of the third magnet group 33 are respectively located on both sides of the vacuum chamber 1, and are used to generate a third magnetic field in the beam path.

[0028] The magnet groups in the magnet unit of the prior art are directly arranged on both sides of the vacuum chamber 1, and are not arranged in the magnetic chamber. The vacuum chamber 1 in the ion beam rectifying device is used for the plasma beam to pass through. The magnetic field generated by the magnets on both sides of the vacuum chamber 1 optimizes the shape of the plasma beam. The three groups of magnet units are arranged at intervals on the beam path of the plasma beam to provide different magnetic fields respectively, which also makes the vacuum chamber 1 longer on the beam path. The vacuum chamber 1 is narrow and long, which makes the vacuum chamber 1 easy to deform and difficult to process. If the cavity wall is thickened, the plasma beam channel in the vacuum chamber 1 is further reduced, and the internal space of the vacuum chamber 1 is small, which makes it impossible to install other auxiliary components, such as graphite parts, beam measurement devices, vacuum measurement devices and other vacuum pumping devices.

[0029] In order to solve the above technical problems, the vacuum chamber of the ion beam rectifying device provided in the embodiment of the utility model has a large volume and can accommodate one or more magnetic chamber units, and a rectifying channel for allowing the plasma beam to pass is pre-arranged between the two magnetic chambers in each magnetic chamber unit, and the rectifying magnet is arranged in the magnetic chamber, which can accurately rectify the plasma beam entering the magnetic chamber from the incident port and optimize its path and shape; more importantly, because the vacuum chamber of the ion beam rectifying device has a large space, it can also provide sufficient space for the installation of other auxiliary equipment, so that the ion beam rectifying device has strong functionality and application flexibility.

[0030] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present utility model more obvious and easy to understand, the specific embodiments of the present utility model are described in detail below with reference to the accompanying drawings.

[0031] refer to Figures 3 to 5 , Figure 3 It is a structural schematic diagram of an axonometric view of an ion beam rectifying device according to an embodiment of the utility model; Figure 4 It is an exploded schematic diagram of a magnetic cavity unit and a rectifying magnet in an ion beam rectifying device according to an embodiment of the utility model; Figure 5 It is a schematic diagram of an exploded view of a vacuum chamber and a substrate in an ion beam rectifying device according to an embodiment of the utility model.

[0032] The ion beam rectifying device is used to rectify the plasma beam, comprising: a vacuum chamber 100 (such as Figure 3 ), used to provide a vacuum environment; one or more magnetic cavity units 102 are arranged in the vacuum cavity 100 at intervals along the preset beam path direction, each magnetic cavity unit 102 includes two magnetic cavities, the two magnetic cavities are arranged side by side and are respectively located on both sides of the beam path, and a rectification channel is formed between the magnetic cavities; a rectification magnet 103 is arranged in the magnetic cavity and is used to rectify the plasma beam; an exit port 104 (as shown in FIG. Figure 5 ) and the incident port 101 (as shown Figure 3 ) are respectively located at two ends of a preset beam path in the vacuum chamber 100.

[0033] The vacuum chamber 100 in the ion beam rectifying device provided by the embodiment of the utility model has a large volume and can accommodate one or more magnetic cavity units 102, and a rectifying channel for allowing the plasma beam to pass is pre-arranged between the two magnetic cavities in each magnetic cavity unit 102, and the rectifying magnet 103 is arranged in the magnetic cavity, which can accurately rectify the plasma beam entering between the magnetic cavities from the incident port 101 and optimize its path and shape; more importantly, because the vacuum chamber 100 of the ion beam rectifying device has a large space, it can also provide sufficient space for the installation of other auxiliary equipment, so that the ion beam rectifying device has strong functionality and application flexibility.

[0034] It should be noted that the plasma beam is provided by an ion source, which generates plasma by ionizing gas and forms a high-energy particle flow, namely, a plasma beam.

[0035] The vacuum chamber 100 is used to provide a vacuum environment, which helps to maintain stability during the plasma beam rectification process. The vacuum chamber 100 also has the advantage of high cleanliness and can prevent impurities in the air from entering the plasma beam rectification area.

[0036] In this embodiment, the vacuum chamber 100 is a rectangular parallelepiped. In other embodiments, the vacuum chamber 100 may also be a cylindrical body.

[0037] like Figure 5 As shown, the vacuum chamber 100 further includes: a first side wall 100a, the first side wall 100a is arranged along the beam path direction, and one or more magnetic cavity units 102 are arranged on the first side wall 100a. As an example, the first side wall 100a is parallel to the beam path.

[0038] The vacuum chamber 100 includes a second side wall 100b, on which an incident port 101 (such as Figure 3 a third side wall 100c, on which an emission port 104 is disposed; the third side wall 100c and the second side wall 100b are respectively located on both sides of the vacuum chamber 100 along the direction of the beam path.

[0039] The incident port 101 is used to receive the plasma beam, and can provide positioning and guiding functions for the plasma beam entering the vacuum chamber 100 by precisely controlling the initial entry point of the plasma beam in the ion beam rectifying device.

[0040] In this embodiment, the incident port 101 is circular. In other embodiments, the incident port 101 may also be in other shapes, such as a square or a rectangle.

[0041] The exit port 104 on the third side wall 100c is used to connect with a device for receiving the rectified plasma beam, and is an extension of the plasma beam path, and accurately controls the exit position of the rectified plasma beam in the ion beam rectifying device.

[0042] In this embodiment, the emission port 104 is in a square shape. In other embodiments, the emission port 104 may also be in other shapes, such as a circle or a rectangle.

[0043] It should be noted that the first side wall 100a is connected to the second side wall 100b and the third side wall 100c at both ends in the beam path direction, respectively.

[0044] The vacuum chamber 100 further includes a fourth side wall 100d (eg Figure 5The fourth side wall 100d is disposed along the beam path direction, and the fourth side wall 100d is connected to the second side wall 100b and the third side wall 100c at both ends of the beam path direction. Figure 5 As shown), the fifth side wall 100e is arranged along the beam path direction and is opposite to the fourth side wall 100d. The fifth side wall 100e is connected to the second side wall 100b and the third side wall 100c at both ends in the beam path direction.

[0045] The ion beam rectifying device also includes: a graphite piece, a beam current measuring device, a vacuum measuring device, and a negative pressure generating device (not shown in the figure), which are placed on the inner wall of the vacuum chamber or embedded on the side wall of the vacuum chamber. Due to the large internal space of the vacuum chamber 100, auxiliary devices such as the graphite piece, the beam current measuring device, the vacuum measuring device, and the negative pressure generating device can be conveniently placed and adjusted on the vacuum chamber 100. Such a layout not only facilitates the maintenance and upgrading of the equipment, but also provides convenience for accurate measurement in complex experimental environments, thereby improving the overall efficiency and reliability of the device.

[0046] As an example, the graphite piece, the beam current measuring device, the vacuum measuring device and the negative pressure generating device are arranged on the fourth side wall 100d or the fifth side wall 100e. Specifically, the fourth side wall 100d and the fifth side wall 100e are provided with mounting holes (not shown in the figure). The graphite piece, the beam current measuring device, the vacuum measuring device and the negative pressure generating device are arranged on the mounting holes.

[0047] In this embodiment, the magnetic cavity of the magnetic cavity unit 102 is used to set the rectifying magnet 103 and isolate the rectifying magnet from the vacuum cavity. The number of magnetic cavity units 102 is multiple, and the number of rectifying magnets 103 is greater than the number of magnetic cavity units 102. The multiple rectifying magnets 103 are unevenly distributed in the multiple magnetic cavity units 102.

[0048] One or more magnetic cavity units 102 are arranged at intervals on the beam path. Figure 4 As shown, there are two magnetic cavity units 102, including: a first magnetic cavity unit 1021, close to the incident port 101, the first magnetic cavity unit 1021 includes two first magnetic cavities 1021a, and the two first magnetic cavities 1021a are respectively located on both sides of the beam path; a second magnetic cavity unit 1022, located on the side of the first magnetic cavity unit 1021 away from the incident port 101, and spaced apart from the first magnetic cavity unit 1021, the second magnetic cavity unit 1022 includes two second magnetic cavities 1022a, and the two second magnetic cavities 1022a are respectively located on both sides of the beam path.

[0049] like Figure 4As shown, the rectifying magnet 103 includes a first magnet 103a, a second magnet 103b and a third magnet 103c arranged at intervals in a preset beam path direction. The first magnet 103a is located in the first magnetic cavity 1021a and is used to generate a first magnetic field in the beam path; the second magnet 103b is located in the first magnetic cavity 1021a and is used to generate a second magnetic field in the beam path; the third magnet 103c is located in the second magnetic cavity 1022a and is used to generate a third magnetic field in the beam path.

[0050] The first magnetic field, the second magnetic field and the third magnetic field formed by the first magnet 103a, the second magnet 103b and the third magnet 103c on the beam path respectively cooperate with each other to form a magnetic field system for dispersing, focusing and collimating the plasma beam. Different magnets work together to refine and calibrate the plasma beam to achieve an ideal plasma beam shape.

[0051] In other embodiments, there are multiple magnetic cavity units and rectifier magnets, and the number of magnetic cavity units is the same as the number of rectifier magnets, and one rectifier magnet is disposed in each magnetic cavity unit. As an example, there are three magnetic cavity units and three rectifier magnets.

[0052] Specifically, the multiple magnetic cavity units include: a first magnetic cavity unit, close to the incident port, the first magnetic cavity unit includes two first magnetic cavities, and the two first magnetic cavities are respectively located on both sides of the beam path; a second magnetic cavity unit, located on the side of the first magnetic cavity unit away from the incident port, and spaced apart from the first magnetic cavity unit, the second magnetic cavity unit includes two second magnetic cavities, and the two second magnetic cavities are respectively located on both sides of the beam path; a third magnetic cavity unit, located on the side of the second magnetic cavity unit away from the first magnetic cavity unit, and spaced apart from the second magnetic cavity unit, the third magnetic cavity unit includes two third magnetic cavities, and the two third magnetic cavities are respectively located on both sides of the beam path.

[0053] The rectifying magnet includes a first magnet, a second magnet and a third magnet which are arranged at intervals in a preset beam path direction, the first magnet is arranged in a first magnetic cavity, the second magnet is arranged in a second magnetic cavity, and the third magnet is arranged in a third magnetic cavity.

[0054] In other embodiments, the number of magnetic cavity units is one, the number of rectifying magnets is multiple, and the multiple rectifying magnets are simultaneously arranged in one magnetic cavity unit. As an example, the number of magnetic cavity units is one, and the number of rectifying magnets is three. The three rectifying magnets are arranged in the same magnetic cavity unit, which is conducive to improving the space utilization rate of the ion beam rectifying device.

[0055] In this embodiment, an opening 114 is provided at one end of the magnetic cavity, and the rectifying magnet 103 is placed in the magnetic cavity through the opening 114 .

[0056] In this embodiment, the angle between the two magnetic cavities included in one or more magnetic cavity units is less than 10 degrees. If the angle between the magnetic cavities in one or more magnetic cavity units is too large, it may cause a weak magnetic region to exist between the magnetic fields generated by the rectifying magnets 103 in the two magnetic cavities in the magnetic cavity unit. In the weak magnetic region, the plasma beam will be less affected by the required magnetic field, resulting in a poor rectification effect, thereby affecting the collimation and uniformity of the plasma beam. If the angle between the magnetic cavities in one or more magnetic cavity units is too small, and the corresponding angle between the magnets in the two magnetic cavities is too small, the magnetic fields generated by the rectifying magnets 103 in the two magnetic cavities will overlap in a large area, resulting in an excessively strong magnetic force, thereby causing the plasma beam to be over-focused in a smaller area, limiting the spatial adjustability of the plasma beam, and reducing the adjustment flexibility and control accuracy of the rectifying device.

[0057] In this embodiment, the interval between the two magnetic cavities in each magnetic cavity unit is 50 mm to 150 mm. If the interval between the two magnetic cavities in each magnetic cavity unit is too large, the plasma beam may diverge excessively in the space between the two magnets, resulting in reduced collimation and focusing capabilities of the beam, and reducing the rectification accuracy. In addition, too large an interval may lead to uneven distribution of the magnetic field, making it impossible for the beam to obtain a uniform shaping effect when passing through. If the interval between the two magnetic cavities in each magnetic cavity unit is too small, the adjustment flexibility of the magnetic field will be poor and the adjustment range will be small, which is not conducive to fine-tuning the plasma beam during the rectification process.

[0058] One or more spaced through holes 107 are disposed on the first side wall 100 a , and a substrate 105 is disposed on each through hole 107 .

[0059] Specifically, Figure 5 As shown, a first through hole 107a and a second through hole 107b are provided on the first side wall 100a, and the first through hole 107a is closer to the incident port 101 than the second through hole 107b; a first substrate 105a covers the first through hole 107a, and a first magnetic cavity unit 1021 is provided on the first substrate 105a; a second substrate 105b covers the second through hole 107b, and a second magnetic cavity unit 1022 is provided on the second substrate 105b.

[0060] In this embodiment, the first substrate 105a, the second substrate 105b, the vacuum chamber 100, the first magnetic cavity unit 1021 and the second magnetic cavity unit 1022 jointly provide a vacuum environment for plasma beam rectification, which is conducive to achieving high-quality plasma beam control during the rectification process and improving the accuracy and efficiency of the rectification effect.

[0061] It should be noted that in other embodiments, the number of through holes and substrates can also be adaptively changed according to the number of magnetic cavity units. For example, if the number of magnetic cavity units is three, the number of corresponding through holes is three, and the number of substrates is three.

[0062] The ion beam rectifying device includes: a substrate sealing ring 108 located between the substrate 105 and the peripheral area of ​​the through hole 107 on the first side wall 100 a .

[0063] Specifically, the substrate sealing ring 108 includes: a first substrate sealing ring 108a (such as Figure 5 ), located between the peripheral area of ​​the first through hole 107a on the first side wall 100a and the first substrate 105a; the second substrate sealing ring 108b (as shown Figure 5 ), located between the outer region of the second through hole 107b on the first side wall 100a and the second substrate 105b.

[0064] It should be noted that the first substrate 105a and the peripheral area of ​​the first through hole 107a are fastened and connected by existing mechanical means, and the second substrate 105b and the peripheral area of ​​the second through hole 107b are fastened and connected by existing mechanical means, for example, fastening connection with bolts and nuts.

[0065] It should also be noted that in other embodiments, the number of substrate sealing rings can be adaptively changed according to the number of through holes and substrates. For example, if the number of through holes and substrates is three, then the number of substrate sealing rings is three accordingly.

[0066] like Figure 5 As shown, the ion beam rectifying device includes: a magnetic cavity sealing ring 109, which is located between the end of the opening in the magnetic cavity and the substrate 105.

[0067] In this embodiment, the ion beam rectifying device includes: a first magnetic cavity sealing ring 109a (such as Figure 5 ), disposed between the end of the opening in the first magnetic cavity 1021a and the first substrate 105a; the second magnetic cavity sealing ring 109b (as shown Figure 5 As shown), between the end of the opening in the second magnetic cavity 1022a and the second substrate 105b.

[0068] It should be noted that the end of the opening in the first magnetic cavity 1021a and the first substrate 105a are fastened and connected by an existing mechanical method, and the end of the opening in the second magnetic cavity 1022a and the second substrate 105b are fastened and connected by an existing mechanical method, for example, a fastening connection of bolts and nuts.

[0069] In this embodiment, the first substrate sealing ring 108a seals the first substrate 105a and the first side wall 100a outside the first through hole 107a, and the second substrate sealing ring 108b seals the second substrate 105b and the first side wall 100a outside the second through hole 107b; the first magnetic cavity sealing ring 109a seals the end of the opening in the first magnetic cavity 1021a and the first substrate 105a, and the second magnetic cavity sealing ring 109b seals the end of the opening in the second magnetic cavity 1022a and the second substrate 105b, so that the vacuum environment surrounded by the first substrate 105a, the second substrate 105b, the vacuum cavity 100, and the first magnetic cavity 1021a and the second magnetic cavity 1022a is sealed and isolated from the external atmospheric environment.

[0070] In this embodiment, the vacuum chamber 100 further includes: a reinforcing rib 106 located at the bottom of the first side wall 100a between the first through hole 107a and the second through hole 107b, which improves the overall structural strength of the vacuum chamber 100 and prevents deformation due to the pressure difference between the inside and outside of the vacuum chamber 100.

[0071] In some other embodiments, one or more magnetic cavity units may be directly disposed on the first side wall. One or more magnetic cavity units are directly disposed on the first side wall, which is conducive to simplifying the structure of the ion beam rectifying device.

[0072] Specifically, the first side wall has a side wall opening, the magnetic cavity in the magnetic cavity unit is arranged in the vacuum chamber through the side wall opening, and the end of the opening in the magnetic cavity and the first side wall are fastened and connected by an existing mechanical method, for example, a fastening connection of bolts and nuts.

[0073] It should also be noted that the end of the opening in the magnetic cavity and the first side wall are sealed and connected via a sealing ring.

[0074] It should also be noted that the magnetic cavity in the magnetic cavity unit is connected to the atmosphere, which prevents the rectifier magnet 103 from running for a long time in a closed environment, which may cause the magnet performance to decrease or degrade, and is beneficial to improving the stability and reliability of the rectifier magnet 103.

[0075] refer to Figure 6 and Figure 7 , Figure 6 A schematic top view of the ion beam rectifying device of the utility model embodiment when the ion beam rectifying device is working; Figure 7 The present invention is a front view schematic diagram of the ion beam rectifying device of the embodiment of the utility model when the ion beam rectifying device is working.

[0076] Specifically, the first magnet 103a is used to generate a first magnetic field in the beam path, which has the effect of slightly diverging the plasma beam. By fine-tuning the strength and direction of the first magnetic field, the width of the plasma beam can be accurately controlled, creating conditions for the subsequent second magnetic field homogenization step.

[0077] The static second magnetic field generated by the second magnet 103b in the same magnetic cavity is used to homogenize the plasma beam to provide a stable and consistent beam cross section. The second magnetic field makes it easy for the plasma beam to be transmitted toward the exit 104 with uniform density and energy distribution.

[0078] The third magnetic field generated by the third magnet 103c in the second magnetic cavity 1022a is used to collimate the plasma beam after being acted upon by the first magnetic field and the second magnetic field, and guide the plasma beam to a more precise and concentrated path, thereby improving the straightness and focusing ability of the beam.

[0079] In this embodiment, the third magnet 103c, the second magnet 103b and the first magnet 103a are spaced apart in the preset beam path direction, which can reduce the mutual influence among the first magnetic field, the second magnetic field and the third magnetic field, help maintain the stability of the beam quality on the plasma beam propagation path, and reduce the energy loss when the beam is transferred between the magnets.

[0080] In this embodiment, the rectifying magnet 103 includes a quadrupole magnet. The quadrupole magnet can provide a precise magnetic field gradient, can more accurately control the trajectory of the plasma beam, and the quadrupole magnet has a symmetrical magnet structure, which helps to maintain the uniformity of the rectifying magnetic field.

[0081] The rectifying magnet 103 includes: a bracket 1031 (such as Figure 4 As shown); a quadrupole magnet (not shown in the figure) is arranged on the bracket 1031, and the quadrupole magnet includes two pairs of magnets with opposite polarities, which are respectively located in four orthogonal directions; a coil (not shown in the figure) is sleeved on the outer periphery of the quadrupole magnet.

[0082] In this embodiment, the first magnet 103a, the second magnet 103b and the third magnet 103c are respectively arranged in the openings of the first magnetic cavity 1021a and the second magnetic cavity 1022a, the end of the bracket 1031 in the first magnetic cavity 1021a is exposed from the opening of the first magnetic cavity 1021a and extends out of the first substrate 105a, and the end of the bracket 1031 in the second magnetic cavity 1022a is exposed from the opening of the second magnetic cavity 1022a and extends out of the second substrate 105b.

[0083] The function of the quadrupole magnet is to provide finer beam control. Specifically, the material of the quadrupole magnet includes an alloy with high magnetic permeability, such as an iron-cobalt alloy.

[0084] The bracket 1031 is used to accurately fix and correctly align the quadrupole magnet and the coil, and needs to have sufficient mechanical strength and good thermal stability. In this embodiment, the material of the bracket 1031 includes stainless steel or aluminum alloy.

[0085] It should be noted that the bracket 1031 and the first substrate 105a in the first magnet 103a and the second magnet 103b are fastened and connected by bolts. The bracket 1031 and the second substrate 105b in the third magnet 103c are fastened and connected by bolts.

[0086] The coil is used to provide an excitation current to activate the quadrupole magnet and control the strength of the magnetic field. In this embodiment, the coil material is selected from copper or aluminum wires with good electrical conductivity to reduce energy loss.

[0087] It should also be noted that a substrate opening 110 is provided on the substrate 105, and the bracket 1031 of the rectifying magnet 103 extends out of the substrate opening and is fixedly connected to the substrate. Specifically, the bracket 1031 in the rectifying magnet 103 extends out of the substrate opening, and the bracket 1031 extending out of the first substrate 105a is fixedly connected to the first substrate 105a; the bracket 1031 of the rectifying magnet 103 extends out of the substrate opening, and the bracket 1031 extending out of the second substrate 105b is fixedly connected to the second substrate 105b. The bracket 1031 in the rectifying magnet 103 extending out of the substrate opening plays a role in fixing the rectifying magnet 103 to the first substrate 105a and the second substrate 105b.

[0088] Although the utility model is disclosed as above, the utility model is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the utility model. Therefore, the protection scope of the utility model shall be subject to the scope defined by the claims.

Claims

1. An ion beam rectifying device for rectifying a plasma beam, characterized in that: include: Vacuum chamber; One or more magnetic cavity units are arranged in the vacuum cavity at intervals along a preset beam path direction, each of the magnetic cavity units includes two magnetic cavities, the two magnetic cavities are arranged side by side and are respectively located on both sides of the beam path, and a rectifying channel is formed between the magnetic cavities; A rectifying magnet is arranged in the magnetic cavity; The exit port and the entrance port are respectively located at two ends of a beam path preset in the vacuum chamber.

2. The ion beam rectifying device according to claim 1, characterized in that: The rectifying magnet includes a first magnet, a second magnet, and a third magnet which are spaced apart in the preset beam path direction.

3. The ion beam rectifying device according to claim 1, characterized in that: The angle between two magnetic cavities included in one or more magnetic cavity units is less than 10 degrees.

4. The ion beam rectifying device according to claim 1, characterized in that: The number of the magnetic cavity unit is one, the number of the rectifying magnets is multiple, and the multiple rectifying magnets are simultaneously arranged in one magnetic cavity unit; Alternatively, there are multiple magnetic cavity units and rectifier magnets, and the number of the magnetic cavity units is the same as the number of rectifier magnets, and one rectifier magnet is arranged in each magnetic cavity unit; Alternatively, there are a plurality of magnetic cavity units, and the number of the rectifying magnets is greater than the number of the magnetic cavity units, and the plurality of rectifying magnets are unequally distributed in the plurality of magnetic cavity units.

5. The ion beam rectifying device according to claim 1, characterized in that: The vacuum chamber is in the shape of a rectangular parallelepiped, and comprises: The first side wall is arranged along the beam path direction, one or more through holes are arranged at intervals on the first side wall, and a substrate is arranged on each of the through holes.

6. The ion beam rectifying device according to claim 5, characterized in that: The vacuum chamber further includes: a reinforcing rib located at the bottom of the first side wall between adjacent through holes.

7. The ion beam rectifying device according to claim 5, characterized in that: The ion beam rectifying device comprises: A substrate sealing ring, located between the peripheral area of ​​the through hole on the first side wall and the substrate; An opening is provided at one end of the magnetic cavity; The ion beam rectifying device comprises: a magnetic cavity sealing ring, which is located between the end of the opening in the magnetic cavity and the substrate.

8. The ion beam rectifying device according to claim 5, characterized in that: The rectifying magnet comprises a bracket; The substrate is provided with a through substrate opening; The bracket of the rectifying magnet extends out of the opening of the base plate and is fixedly connected to the base plate.

9. The ion beam rectifying device according to claim 1, characterized in that: The vacuum chamber comprises: A first side wall is disposed along a beam path direction, and the one or more magnetic cavity units are directly disposed on the first side wall.

10. The ion beam rectifying device according to claim 1, characterized in that: The ion beam rectifying device further comprises: a graphite piece, a beam current measuring device, a vacuum measuring device and a negative pressure generating device, which are placed on the inner wall of the vacuum chamber or embedded on the side wall of the vacuum chamber.

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