Semiconductor packaging structure and radio frequency module

Abstract

The utility model discloses a semiconductor packaging structure and a radio frequency module, and relates to the technical field of semiconductor packaging. The packaging structure comprises a substrate, a filter chip, a non-filter chip, a supporting structure arranged on the substrate and located on the periphery of the non-filter chip, a barrier film arranged on the substrate and a plastic packaging body arranged on the side, away from the substrate, of the barrier film. The barrier film covers the filter chip, the non-filter chip and the supporting structure, so that a first cavity is formed between the functional surface of the filter chip and the substrate under the enclosing action of the barrier film, and a second cavity is formed on one surface, close to the substrate, of the non-filter chip under the enclosing action of the barrier film and the substrate; a first laser opening penetrating through at least part of the supporting structure is formed in the barrier film, the first laser opening is located on the periphery of the non-filter chip and communicated with the second cavity, and the second cavity can be filled with the plastic package body through the first laser opening. According to the semiconductor packaging structure, the problem of poor bottom filling of the non-filter chip can be improved, and the reliability of the device is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor packaging, and in particular to a semiconductor packaging structure and a radio frequency module. Background Art

[0002] With the continuous advancement of semiconductor technology, filter chip modules have also ushered in rapid development opportunities, and their product structure has also developed towards higher integration, smaller package size, and more comprehensive performance. The functional chips of the filter chip module generally include filter chips and non-filter chips. In order to cater to the development trend of high package integration, filter chips and non-filter chips need to be integrated in a limited area package structure to achieve a thin and light product structure. Among them, taking the surface acoustic wave filter as an example, the working principle of the surface acoustic wave filter is that sound waves are transmitted on the surface of the chip, using the piezoelectric properties of piezoelectric materials, and using input and output transducers to convert the input signal of the radio wave into mechanical energy. After processing, the mechanical energy is converted into an electrical signal to filter unnecessary signals and noise, thereby improving the reception quality.

[0003] In order to ensure that the filter chip has a good filtering function, the functional area of ​​the filter chip cannot contact other substances, and it is necessary to ensure that there is enough cavity to work normally. Other types of chips need to be completely filled with plastic packaging materials to ensure their reliability. In traditional packaging methods, most of them use an overall coating on the back of the filter chip and the non-filter chip, and then inject the plastic packaging material so that the plastic packaging material is blocked by the diaphragm to form the cavity structure of the filter chip, and the plastic packaging material needs to be able to break through the diaphragm to fill the non-filter chip area. However, the existing pressure filling method is prone to incomplete bottom filling of the non-filter chip, which greatly reduces the reliability of the product. Utility Model Content

[0004] The purpose of the utility model is to provide a semiconductor packaging structure and a radio frequency module, which can improve the problem of poor bottom filling of non-filter chips in the prior art, thereby improving device reliability.

[0005] The embodiment of the utility model is achieved as follows:

[0006] In one aspect of the utility model, a semiconductor packaging structure is provided, which includes a substrate, a filter chip and a non-filter chip arranged on the substrate at intervals, a support structure arranged on the substrate and located at the periphery of the non-filter chip, a barrier film arranged on the substrate, and a plastic package arranged on the side of the barrier film away from the substrate; the barrier film cover is arranged on the filter chip, the non-filter chip and the support structure, so that a first cavity is formed between the functional surface of the filter chip and the substrate under the enclosure of the barrier film, and a second cavity is formed on the side of the non-filter chip close to the substrate under the enclosure of the barrier film and the substrate; a first laser opening is provided on the barrier film, which penetrates at least part of the support structure, and the first laser opening is located at the periphery of the non-filter chip and communicates with the second cavity, and the plastic package can be filled in the second cavity through the first laser opening. The semiconductor packaging structure can improve the problem of poor bottom filling of the non-filter chip in the prior art, thereby improving the reliability of the device.

[0007] Optionally, a width of the first laser opening is between 50 μm and 70 μm; and / or a distance between the first laser opening and the non-filter chip is between 30 μm and 80 μm.

[0008] Optionally, the first laser opening is arranged in a ring shape and surrounds the outer periphery of the non-filter chip; or, the first laser opening is located on one side of the non-filter chip; or, the first laser opening includes a first opening and a second opening that are interconnected, and the first opening and the second opening are respectively located on adjacent sides of the non-filter chip.

[0009] Optionally, the supporting structure is an annular retaining wall, and the annular retaining wall is arranged around the outer periphery of the non-filter chip.

[0010] Optionally, the support structure is a support layer provided on the substrate, and an orthographic projection of the support layer on the substrate is located at least on one side other than the filter chip.

[0011] Optionally, the height of the support structure is between 15 μm and 20 μm.

[0012] Optionally, the distance from the support structure to the non-filter chip is between 30 μm and 80 μm.

[0013] Optionally, a second laser opening in a ring shape is further provided on the barrier film, and the orthographic projection of the second laser opening on the substrate surrounds the periphery of the filter chip, the non-filter chip and the supporting structure, and is located on the inner side of the cutting path of the semiconductor packaging structure; the plastic package body is connected to the substrate through the second laser opening during plastic packaging.

[0014] Optionally, the width of the second laser opening is greater than or equal to 50 μm; and / or the distance from the second laser opening to the center of the cutting path is between 100 μm and 125 μm.

[0015] Another aspect of the present invention provides a radio frequency module, which includes the above-mentioned semiconductor packaging structure.

[0016] The beneficial effects of the utility model include:

[0017] The semiconductor packaging structure provided by the present application has a support structure arranged on the periphery of the substrate near the non-filter chip, and a first laser opening that can penetrate at least part of the support structure is formed on the barrier film. In this way, the setting of the first laser opening can enable the barrier film to be opened. During the plastic sealing process of the plastic sealing body, it is beneficial for the plastic sealing body to enter the second cavity through the first laser opening, thereby effectively reducing the filling resistance of the plastic sealing body to the second cavity, and there is sufficient time to discharge the gas in the second cavity and fill the plastic sealing body. In this way, it is beneficial for the plastic sealing body to completely fill the second cavity, thereby improving the reliability of the device. In addition, through the setting of the support structure, the present application can reduce the damage of the laser to the substrate during the formation of the first laser opening, and can further improve the reliability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the utility model, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the utility model and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 One of the schematic diagrams of the preparation process of the semiconductor packaging structure provided by the embodiment of the utility model;

[0020] Figure 2 A second schematic diagram of the preparation process of the semiconductor packaging structure provided by the embodiment of the utility model;

[0021] Figure 3 A third schematic diagram of the preparation process of the semiconductor packaging structure provided by the embodiment of the utility model;

[0022] Figure 4 A fourth schematic diagram of the preparation process of the semiconductor packaging structure provided by an embodiment of the utility model;

[0023] Figure 5 A fifth schematic diagram of the preparation process of the semiconductor packaging structure provided by the embodiment of the utility model;

[0024] Figure 6 A sixth schematic diagram of a process for preparing a semiconductor packaging structure provided by an embodiment of the present utility model;

[0025] Figure 7FIG7 is a seventh schematic diagram of the preparation process of the semiconductor packaging structure provided in an embodiment of the present utility model.

[0026] Icon: 10-substrate; 20-filter chip; 21-first bump; 22-first cavity; 30-non-filter chip; 31-second bump; 32-second cavity; 40-support structure; 50-barrier film; 51-first laser opening; 52-second laser opening; 60-plastic package; 70-green paint. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Generally, the components of the embodiments of the utility model described and shown in the drawings here can be arranged and designed in various different configurations.

[0028] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the present invention to be protected, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0030] In the description of the present utility model, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the accompanying drawings, or the orientation or position relationship in which the utility model product is usually placed when in use, which is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0031] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0032] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] Please refer to Figure 5 The present embodiment provides a semiconductor packaging structure, which includes a substrate 10, a filter chip 20 and a non-filter chip 30 arranged on the substrate 10 at intervals, a support structure 40 arranged on the substrate 10 and located at the periphery of the non-filter chip 30, a barrier film 50 arranged on the substrate 10, and a plastic package 60 arranged on the side of the barrier film 50 away from the substrate 10; the barrier film 50 is covered on the filter chip 20, the non-filter chip 30 and the support structure 40, so that a first cavity 22 is formed between the functional surface of the filter chip 20 and the substrate 10 under the enclosure of the barrier film 50, and a second cavity 32 is formed on a side of the non-filter chip 30 close to the substrate 10 under the enclosure of the barrier film 50 and the substrate 10; a first laser opening 51 is provided on the barrier film 50, which penetrates at least a part of the support structure 40, and the first laser opening 51 is located at the periphery of the non-filter chip 30 and communicates with the second cavity 32, and the plastic package 60 can be filled in the second cavity 32 through the first laser opening 51. The semiconductor packaging structure can improve the problem of poor bottom filling of the non-filter chip 30 in the prior art, thereby improving device reliability.

[0034] The filter chips 20 and non-filter chips 30 are arranged on the substrate 10 at intervals, wherein the specific number of the filter chips 20 and non-filter chips 30 is not limited in this application, and those skilled in the art can select according to actual needs.

[0035] The filter chip 20 can adopt SMD (solder mask defines pad, the solder mask is usually green paint 70) window design, or NSMD (non-solder mask defines pad) window design, or a mixed design of the two window modes, which is not limited in this application. Figure 2 As shown, Figure 2 The filter chip 20 on the left side of the middle adopts an SMD window design, and the filter chip 20 on the right side adopts an NSMD window design.

[0036] Exemplarily, the non-filter chip 30 provided in the present application may be a conventional electronic component that can work without a cavity, such as an antenna switch, a low-noise amplifier, a capacitor, and an inductor.

[0037] The filter chip 20 is connected to the substrate 10 via the first bump 21, and the non-filter chip 30 is connected to the substrate 10 via the second bump 31. It should be noted that a cavity structure (i.e., the first cavity 22) needs to be formed between the functional surface of the filter chip 20 (the surface of the filter chip 20 close to the substrate 10) and the substrate 10.

[0038] The second cavity 32 formed between the bottom surface of the non-filter chip 30 (the surface of the non-filter chip 30 close to the substrate 10 ) and the substrate 10 needs to be filled with the plastic package 60 .

[0039] Optionally, in this embodiment, the distance from one side of the non-filter chip 30 close to the substrate 10 (the bottom surface of the non-filter chip 30) to the substrate 10 is greater than or equal to 50 μm. In other words, the depth of the second cavity 32 is greater than or equal to 50 μm, for example, 50 μm, 60 μm, 80 μm, etc.

[0040] The support structure 40 is disposed on the substrate 10, and the support structure 40 is located at the periphery of the non-filter chip 30. The present application can support the barrier film 50 by arranging the support structure 40, so that the barrier film 50 near the non-filter chip 30 area is suspended. Figure 5 In this way, it is convenient to open the first laser opening 51 and to fill the second cavity 32 with the plastic package body 60 .

[0041] The present application does not limit the specific structural type of the support structure 40. For example, in the first feasible implementation, the support structure 40 may be an annular retaining wall, which is arranged around the periphery of the non-filter chip 30. That is, in this implementation, the support structure 40 is arranged around the periphery of the non-filter chip 30.

[0042] In a second feasible implementation manner, the support structure 40 is a support layer provided on the substrate 10 , and the orthographic projection of the support layer on the substrate 10 is located at least on one side other than the filter chip 30 .

[0043] That is to say, in this implementation, the support layer can be only arranged on one side, two sides or three sides of the non-filter chip 30, or the support layer can also be arranged around the non-filter chip 30 (that is, a support layer is respectively provided on the four sides of the non-filter chip 30).

[0044] In addition, a layer of green paint 70 may be provided on the substrate 10, which surrounds the first bump 21 of the filter chip 20 and plays a buffering and blocking role in the mold flow. A second bump 31 is provided on the green paint 70 layer, and the second bump 31 is electrically connected to the pad on the substrate 10 to raise the mounting position of the non-filter chip 30.

[0045] When a green paint layer 70 is provided on the substrate 10, the support layer is provided on the green paint layer 70. Figure 5 shown.

[0046] In this embodiment, the material of the supporting structure 40 may be green paint 70, resin, glue, etc., and this application does not impose any specific limitation.

[0047] In addition, optionally, the height of the support structure 40 is between 15 μm and 20 μm. For example, the height of the support structure 40 may be 15 μm, 17 μm, 18 μm or 20 μm.

[0048] Furthermore, in the present embodiment, the distance between the support structure 40 and the non-filter chip 30 is between 30 μm and 80 μm.

[0049] Optionally, when a layer of green paint 70 is provided on the substrate 10, the sum of the height of the support structure 40 and the height of the green paint 70 layer can be between 30 μm and 40 μm. It should be noted that, generally, the sum of the height of the support structure 40 and the height of the green paint 70 layer should be less than or equal to the depth of the second cavity 32.

[0050] The barrier film 50 is used to isolate the filter chip 20 and the plastic package 60. In this embodiment, the barrier film 50 is disposed on the substrate 10 and is disposed on the filter chip 20, the non-filter chip 30 and the support structure 40. Figures 3 to 5 shown.

[0051] Optionally, the barrier film 50 may have a thickness between 15 μm and 50 μm. For example, the barrier film 50 may have a thickness of 15 μm, 20 μm, 30 μm, 40 μm or 50 μm.

[0052] Under the action of the barrier film 50, a gap can be formed between the functional surface of the filter chip 20 and the substrate 10. Figure 5 The barrier film 50 can be lifted up around the non-filter chip 30 under the support of the support structure 40, so that the barrier film 50 around the non-filter chip 30 is suspended, as shown in FIG. Figure 5 shown.

[0053] In addition, the present application further provides a first laser opening 51 on the barrier film 50, the first laser opening 51 being formed by laser lithography, and the first laser opening 51 penetrates at least a portion of the support structure 40. The present application provides the first laser opening 51 on the barrier film 50 and at least a portion of the support structure 40, so that damage to the substrate 10 can be avoided during the laser lithography process.

[0054] Optionally, the orthographic projection of the first laser opening 51 on the substrate 10 may be at least partially located on the support structure 40 , or may be entirely located on the support structure 40 , and the present application does not impose any specific limitation on this.

[0055] The plastic package 60 is disposed on the side of the barrier film 50 away from the substrate 10 , and the barrier film 50 is provided with a first laser opening 51 penetrating the support structure 40 and communicating with the second cavity 32 . In this way, the plastic package 60 can be filled into the second cavity 32 through the first laser opening 51 .

[0056] When the pressure filling scheme is adopted, during the injection molding process, the flow of the plastic encapsulation body 60 is resisted by the barrier film 50 around the non-filter chip 30, which hinders the filling effect of the non-filter chip 30, resulting in the instability of the position of the plastic encapsulation body 60 breaking through the barrier film 50, uneven force, and the gas in the second cavity 32 cannot be discharged, or the timing of the plastic encapsulation body 60 breaking through the barrier film 50 is late, and the optimal flow characteristics of the plastic encapsulation body 60 are lost, which ultimately leads to the phenomenon of poor filling or non-filling of the non-filter chip 30. However, the present application adopts a support structure 40, and a laser film opening process is used to form a first laser opening 51 that penetrates the support structure 40 on the barrier film 50, so that an opening can be opened in the barrier film 50 around the non-filter chip 30, and the damage to the substrate 10 when the laser laser process is used to form the first laser opening 51 can be effectively improved. During the injection molding process of the plastic package 60, the filling of the second cavity 32 by the plastic package 60 will not be hindered by the barrier film 50, and there is sufficient time to exhaust gas and fill, so that the non-filter chip 30 can be completely filled. Since the filter chip 20 is wrapped by the barrier film 50, the first cavity 22 can be formed.

[0057] In summary, the semiconductor packaging structure provided by the present application has a support structure 40 arranged on the periphery of the substrate 10 near the non-filter chip 30, and a first laser opening 51 that can penetrate at least part of the support structure 40 is formed on the barrier film 50. In this way, the setting of the first laser opening 51 can enable the barrier film 50 to be opened. During the plastic sealing process of the plastic sealing body 60, it is beneficial for the plastic sealing body 60 to enter the second cavity 32 through the first laser opening 51, so that the filling resistance of the plastic sealing body 60 to the second cavity 32 is effectively weakened, and there is sufficient time to discharge the gas in the second cavity 32 and fill the plastic sealing body 60. In this way, it is beneficial for the plastic sealing body 60 to completely fill the second cavity 32, thereby improving the reliability of the device. In addition, through the setting of the support structure 40, the present application can reduce the damage of the laser to the substrate 10 during the formation of the first laser opening 51, and can further improve the reliability of the device.

[0058] Optionally, the width of the first laser opening 51 is between 50 μm and 70 μm. For example, the width of the first laser opening 51 is 50 μm, 60 μm or 70 μm.

[0059] Furthermore, the distance between the first laser opening 51 and the non-filter chip 30 may be between 30 μm and 80 μm. For example, the distance may be 30 μm, 40 μm, 50 μm or 80 μm.

[0060] The specific shape of the first laser opening 51 is not limited in this application. For example, in a feasible implementation, the first laser opening 51 is arranged in a ring shape and surrounds the outer periphery of the non-filter chip 30. That is, in this embodiment, the first laser opening 51 is arranged around the non-filter chip 30 in a circle.

[0061] In another feasible implementation, the first laser opening 51 is located on a side other than the filter chip 30 . That is, the first laser opening 51 is only disposed on one side other than the filter chip 30 .

[0062] In another feasible implementation, the first laser opening 51 includes a first opening and a second opening that are interconnected, and the first opening and the second opening are respectively located on two adjacent sides of the non-filter chip 30. That is, in this implementation, the first laser opening 51 is arranged in an L shape.

[0063] Of course, the first laser opening 51 may also include a first opening, a second opening and a third opening that are connected in sequence, and the first opening, the second opening and the third opening are respectively located at three sides of the non-filter chip 30. In this way, the first laser opening 51 is arranged in a U shape.

[0064] It should be noted that the shape of the first laser opening 51 is only an example, and those skilled in the art can select a suitable shape as needed.

[0065] In addition, it should be noted that the barrier film 50 is coated as a whole, and the product may be subjected to hot and cold cycles during the reliability stage, which may easily affect the bonding force between the barrier film 50 and the substrate 10 and the plastic package 60, thereby causing stress concentration and poor reliability. Figure 7 As shown, the present application further provides a second laser opening 52 in a ring shape on the barrier film 50, and the orthographic projection of the second laser opening 52 on the substrate 10 surrounds the periphery of the filter chip 20, the non-filter chip 30 and the support structure 40, and is located on the inner side of the cutting path of the semiconductor packaging structure; the plastic package body 60 is connected to the substrate 10 through the second laser opening 52 during plastic packaging.

[0066] That is, the second laser opening 52 is as follows Figure 6The orthographic projection shown on the substrate 10 surrounds the periphery of the filter chip 20, the non-filter chip 30 and the support structure 40. In this way, when the plastic package 60 is plastic-sealed, the plastic package 60 can be filled in the second laser opening 52, thereby improving the bonding force between the plastic package 60 and the substrate 10.

[0067] It should be noted that the second laser opening 52 is also formed by a laser laser process, and the corresponding position of the barrier layer is vaporized by the laser laser process. During the plastic sealing and cutting process in the packaging stage, compared with conventional film-coated products (without the second laser opening 52), the use of laser film opening technology can make the plastic sealing body 60 at the surrounding positions be combined with the substrate 10, which can effectively avoid the bonding force problem of the substrate 10, the barrier film 50 and the plastic sealing body 60 during the cutting process, while enhancing the sealing of the product and further improving the reliability of the film-coated product.

[0068] Optionally, the width of the second laser opening 52 is greater than or equal to 50 μm; and / or, the distance from the second laser opening 52 to the center of the cutting path is between 100 μm and 125 μm. It should be noted that the width of the second laser opening 52 refers to the size of the second laser opening 52 along the first direction, and the first direction is the same as the arrangement direction of the filter chip 20 and the non-filter chip 30, that is, Figure 7 Horizontal direction in .

[0069] The present application also provides a method for preparing a semiconductor packaging structure, including:

[0070] Step 1: If Figures 1 to 3 As shown, a substrate 10 is taken, and a support structure 40 is added on the green paint 70 layer around the non-filter chip 30, which does not contact the non-filter chip 30. There is no need to set a support structure 40 around the filter chip 20, and an integral lamination scheme is adopted to form a barrier film 50, and a first cavity 22 is formed between the functional surface of the filter chip 20 and the substrate 10 under the qualified action of the barrier film 50, so that the barrier film 50 at the support structure 40 is supported and does not fit the substrate 10, and a second cavity 32 is formed between the bottom surface of the non-filter chip 30 and the substrate 10;

[0071] Step 2: Using a laser film opening process, the film paper around the non-filter chip 30 is vaporized by laser. The laser will vaporize the barrier film 50 supported around the non-filter chip 30 and at least part of the support structure 40 at its bottom to form a first laser opening 51. Figure 4As shown. Since the support structure 40 is provided, damage to the substrate 10 can be avoided during laser irradiation. After the barrier film 50 is opened, the plastic sealing operation is performed, and the plastic sealing body 60 enters the second cavity 32 of the non-filter chip 30 through the first laser opening 51 to complete the filling. At this time, the second cavity 32 of the non-filter chip 30 is filled to form a non-cavity structure, and the filter chip 20 still has the first cavity 22 structure, as shown in FIG. Figure 5 shown.

[0072] In addition, it should be noted that the above steps are mainly for forming the first laser opening 51. If the second laser opening 52 is also required, then in step 2, the process of forming the second laser opening 52 is also included. That is, the barrier film 50 at the position corresponding to the second laser opening 52 is vaporized by a laser process to remove the barrier film 50 near the cutting path of the product, and then the plastic sealing process is performed to complete the plastic sealing process. After the plastic sealing is completed, the plastic sealing body 60 near the cutting path contacts the green paint 70 layer on the substrate 10, such as Figure 6 and Figure 7 As shown. When the product cutting process is subsequently performed to cut the required product into individual pieces, the barrier film 50 near the cutting path of the individual product has been gasified, and the plastic package 60 is directly combined with the green paint 70 layer on the substrate 10, which can improve the bonding force between the substrate 10 and the plastic package 60 of the semiconductor packaging structure, reduce stress concentration in the reliability stage, and improve device reliability. In addition, the sealing performance of the product can also be improved.

[0073] In the above step 2, when the laser film opening process is used to form the first laser opening 51 , the width of the laser film opening can be between 50 μm and 70 μm, and the number of laser cycles is greater than or equal to 1 time.

[0074] Another aspect of the present invention provides a radio frequency module, which includes the semiconductor packaging structure mentioned above. Since the specific structure and technical effects of the semiconductor packaging structure mentioned above have been described and explained in detail above, this application will not repeat them here.

[0075] The above description is only an optional embodiment of the utility model and is not intended to limit the utility model. For those skilled in the art, the utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.

[0076] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present utility model will not further describe various possible combinations.

Claims

1. A semiconductor packaging structure, characterized in that: The invention comprises a substrate, a filter chip and a non-filter chip arranged on the substrate at intervals, a support structure arranged on the substrate and located at the periphery of the non-filter chip, a barrier film arranged on the substrate, and a plastic package body arranged on a side of the barrier film away from the substrate; The barrier film cover is arranged on the filter chip, the non-filter chip and the supporting structure, so that a first cavity is formed between the functional surface of the filter chip and the substrate under the enclosure effect of the barrier film, and a second cavity is formed on the side of the non-filter chip close to the substrate under the enclosure effect of the barrier film and the substrate; a first laser opening is provided on the barrier film, which passes through at least a part of the supporting structure, and the first laser opening is located on the periphery of the non-filter chip and is connected with the second cavity, and the plastic package can be filled in the second cavity through the first laser opening.

2. The semiconductor package structure according to claim 1, wherein: The width of the first laser opening is between 50 μm and 70 μm; And / or, the distance between the first laser opening and the non-filter chip is between 30 μm and 80 μm.

3. The semiconductor package structure according to claim 1 or 2, characterized in that: The first laser opening is arranged in a ring shape and surrounds the outer periphery of the non-filter chip; Alternatively, the first laser opening is located on a side of the non-filter chip; Alternatively, the first laser opening includes a first opening and a second opening that are interconnected, and the first opening and the second opening are respectively located on two adjacent sides of the non-filter chip.

4. The semiconductor package structure according to claim 1, wherein: The supporting structure is an annular retaining wall, and the annular retaining wall is arranged around the outer periphery of the non-filter chip.

5. The semiconductor package structure according to claim 1, wherein: The support structure is a support layer disposed on the substrate, and the orthographic projection of the support layer on the substrate is at least located on one side of the non-filter chip.

6. The semiconductor package structure according to claim 4 or 5, characterized in that: The height of the support structure is between 15 μm and 20 μm.

7. The semiconductor package structure according to claim 4 or 5, characterized in that: The distance between the support structure and the non-filter chip is between 30 μm and 80 μm.

8. The semiconductor package structure according to claim 1, wherein: The barrier film is also provided with a second laser opening in a ring shape, and the orthographic projection of the second laser opening on the substrate surrounds the periphery of the filter chip, the non-filter chip and the support structure, and is located on the inner side of the cutting path of the semiconductor packaging structure; the plastic package body is connected to the substrate through the second laser opening during plastic packaging.

9. The semiconductor package structure according to claim 8, characterized in that: The width of the second laser opening is greater than or equal to 50 μm; And / or, the distance from the second laser opening to the center of the cutting path is between 100 μm and 125 μm.

10. A radio frequency module, characterized in that: A semiconductor package structure comprising any one of claims 1 to 9.

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