Connecting device, power supply system using same and plasma process system
Through a connection device including inner conductor and outer conductor, the power system design of the plasma process system is simplified, the problems of electrical load impedance differences and filter circuit cost are solved, and efficient signal transmission and circuit simplification are achieved.
Patent Information
- Application Number
- CN202420182179.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2023-01-25
- Filing Date
- 2024-01-25
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2034-01-25
AI Technical Summary
In existing plasma process systems, the electrical load impedance differences in plasma process components lead to complex connections, requiring a lot of design work and expensive filtering circuits, increasing cost and space occupancy.
Design a connecting device to simplify the connection of the power supply system through the combination of the first inner conductor and the second inner conductor and the outer conductor, realize the transmission of multiple signals, and reduce interference through dielectric isolation, and measure high frequency using a contactless sensor. Signal.
It realizes more efficient energy and information transmission, simplifies circuit design, reduces space occupation and cost, and provides a simpler circuit structure and better signal transmission effect.
Smart Images
Figure CN222282433U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of circuit design, and specifically relates to a connection device, a power supply system using the connection device, and a plasma process system. Background Art
[0002] Plasma technology is one of the important and effective technologies in current industrial design activities. In the process of development of plasma-related technologies, plasma is usually generated through a plasma process system. Through the plasma process system, it plays a role in power supply, workpiece surface treatment, plasma semiconductor manufacturing or workpiece processing by gas laser.
[0003] In such applications, a plasma processing component is used to generate a plasma.
[0004] The plasma processing system may have two electrodes which are fed with two DC voltages, for example for providing an electrostatic chuck, and a high frequency power signal, hereinafter referred to as HF power signal, for generating the plasma.
[0005] Typically, plasma process components are connected to several DC power supplies and a high-frequency power supply, hereinafter referred to as HF power supply.
[0006] A problem with plasma processes running in a plasma process component is that the electrical load impedance of the plasma process component occurring during the process depends on the conditions in the plasma process component and can vary significantly. In particular, the characteristics of the workpiece, electrode and gas ratio are taken into account.
[0007] Therefore, an impedance matching circuit is usually required to convert the impedance of the load to the nominal impedance of the HF power supply. Such an impedance matching circuit is usually placed between the HF power supply and the plasma process component, usually close to the plasma process component.
[0008] In addition to impedance matching circuits, plasma process power systems may require the use of one or more filters in one or more so-called filter boxes. Such filter boxes have circuits to prevent unwanted currents, especially return currents, at frequencies different from the useful frequency.
[0009] Such a filter box can be a circuit arrangement arranged in a housing, which has multiple inputs for connecting multiple power supplies (Leistungsversorgung) with different operating frequencies, one or more outputs and one or more filter circuits. For example, DC, AC and / or HF power supplies can be connected to the input.
[0010] Filter circuits ensure that the connected power supplies do not interfere with each other by protecting them from unwanted currents at other frequencies related to the input.
[0011] For this purpose, the filter circuit preferably has inductors and / or capacitors, which are usually very expensive for current applications due to the required current and voltage carrying capacity and the need for cooling.
[0012] The filter box may be located between the impedance matching circuit and the plasma process components.
[0013] All of these mentioned components, such as DC power supplies, HF power supplies or filter boxes and especially impedance matching circuits and plasma process components, have to be interconnected in a plasma process power supply system.
[0014] When three different signals are fed, such a connection in a conventional arrangement requires a great deal of design effort, since one line is used for each signal.
[0015] In addition to the design effort for this connection device, this also results in the costs of three connection lines.
[0016] Therefore, the present application is based on providing a connection device, a power supply system using the connection device, and a plasma process system to simplify the design of the plasma process power supply system. Utility Model Content
[0017] The present application includes a connection device, a power supply system using the connection device, and a plasma process system, whereby,
[0018] In a first aspect, the present application includes a connection device, including: a first inner conductor; a second inner conductor; and an outer conductor, wherein the outer conductor surrounds both the first inner conductor and the second inner conductor.
[0019] In a second aspect, the present application includes a power supply system, including a first DC power supply, a second DC power supply, a high frequency power supply and a connecting device:
[0020] connection of a first DC power source to a first inner conductor;
[0021] connection of a second DC power source to a second inner conductor;
[0022] A high frequency power source is connected to both the first inner conductor and the second inner conductor.
[0023] In a third aspect, the present application includes a plasma process system, including a connection device and / or a power supply system, and also including at least two electrodes, the electrodes are respectively connected to at least a first inner conductor and a second inner conductor.
[0024] In a fourth aspect, the present application includes a plasma process system, including a connecting device, a plasma process component and an impedance matching circuit, wherein the plasma process component is connected to the impedance matching circuit via the connecting device.
[0025] In one embodiment, the first inner conductor and the second inner conductor are separated by a dielectric.
[0026] In one embodiment, the connection device comprises a third inner conductor, and the third inner conductor is isolated from the first inner conductor or the second inner conductor.
[0027] Through the above technical solution, compared with the prior art, the present application has the following beneficial effects:
[0028] 1. It can transfer energy and information more efficiently through the connection device, and it will not take up too much space like the existing technology;
[0029] 2. Simplify circuit design and use simpler circuit structure to achieve better results than existing technologies;
[0030] 3. Provide three different signals through a seemingly single arrangement, without the need for complex design of multiple lines and connections;
[0031] 4. Typical non-contact current and / or voltage sensors can be used to measure AC voltage, especially high-frequency signals. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] Figure 1 Schematic diagram of a connection device arranged in a plasma process system in an embodiment of the present application.
[0033] Figure 2a -d Schematic diagram of a power supply system and a plasma process system using different connection devices in an embodiment of the present application.
[0034] Figure 3 Schematic diagram of the connection device and sensor in the embodiment of the present application. DETAILED DESCRIPTION
[0035] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0036] In any embodiment, the present application provides a connection device, such as Figure 1 and Figure 3As shown, it includes a first inner conductor 2, a second inner conductor 4 and an outer conductor 9, and the outer conductor is arranged around the first inner conductor 2 and the second inner conductor 4. When this connection device is used, the first inner conductor 2 and the second inner conductor 4 are respectively used to connect to the first DC power supply and the second DC power supply, respectively providing a first DC voltage and a second DC voltage, wherein the first DC power supply and the second DC power supply can output different voltages. Thus, the provision of multiple DC voltages is achieved in a simple connection device 1, and the outer conductor 9 can represent the reference potential of the first inner conductor 2 and the second inner conductor 4.
[0037] The connection device 1 combines the provision of two DC voltages and the transmission of HF power signals in a common configuration, thereby simplifying the design of the plasma process power supply system. Here, HF power signals refer to power signals with a power of ≥500W, in particular ≥1kW, in particular ≥3kW. HF means high frequency. In the field of plasma processing, HF refers to frequencies of ≥2MHz, but this particularly refers to frequencies of ≥10MHz and ≤200MHz.
[0038] Such plasma process power supply systems usually have two DC power supplies, an HF power supply and a connection device for connecting possible loads.
[0039] For example, a possible load may be a plasma process assembly 6, such as a plasma process chamber with two electrodes. These electrodes usually need to be fed with two DC signals and one HF signal, for example, the former is used as an electrostatic chuck and the latter is used to generate the plasma.
[0040] Optionally, other components, such as impedance matching circuits 7 or circuits or components, can also be part of the plasma process power supply system as a protective measure. One or more inductors and / or capacitors can be used as protective measures, in particular one or more DC block capacitors or HF block inductors. DC block capacitors are capacitors designed and arranged to prevent DC currents. HF block inductors are inductors that are designed and arranged in such a way that HF currents can be significantly reduced, in particular to prevent HF currents. In this way, these components can prevent unwanted DC or HF return currents.
[0041] A DC power supply is a power supply designed to provide power with a DC voltage and a DC current. This power can be pulsed or bipolar.
[0042] The reference potential is a voltage potential that has a constant potential relative to ground over several cycles of the HF signal. In particular, it is ground itself.
[0043] In order to use the connecting device in a plasma process power supply system, the inner conductors of the connecting device can be connected to different DC power supplies respectively, and furthermore, the two inner conductors can be connected to an HF power supply.
[0044] This means that a potential load, such as a plasma process chamber, can be fed with three different signals through a single common arrangement without the need for complex design of multiple lines and connections.
[0045] like Figure 2a to Figure 2d In any embodiment, the present application provides a power supply system 10 using the above-mentioned connection device, such as Figure 1 As shown, the connection device 1 can be used to connect with the plasma process component 6, the first DC power supply 5, the second DC power supply 8 and the HF power supply 3, wherein the HF power supply 3 is simultaneously connected to the first inner conductor 2 and the second inner conductor 4, the first DC power supply 5 is connected to the first inner conductor 2, and the second DC power supply 8 is connected to the second inner conductor 4, and finally the plasma process component 6 is connected with the first DC power supply 5, the second DC power supply 8 and the HF power supply 3 through the connection device 1, and the complex connection of multiple power supplies is realized through a simple circuit design.
[0046] In any embodiment, the HF power signal emitted by the HF power source 3 can be coupled to the first inner conductor 2 and the second inner conductor 4 by means of common mode capacitive coupling (C1, C2). Therefore, the connection arrangement of the HF power signal is similar to a conventional coaxial cable from the outside, which makes it possible, for example, to use typical non-contact current and / or voltage sensors to measure AC voltage, especially HF signals.
[0047] In any embodiment, the connection device 1 may include a sensor 13, which may be a current sensor, a voltage sensor or a current and voltage combination sensor, in particular for determining the transmitted HF voltage and current. This makes it possible to implement HF power signal monitoring integrated into the device. Such a sensor can be arranged around the two inner conductors of the coaxial cable. In this way, the HF voltage and / or HF current can be determined, even if it is distributed on the two inner conductors. The connection device can have a sensor to determine the main power and / or the return power. For example, such a sensor can be designed as a so-called directional coupler. For example, US 7,755,451 B2 and US10,490,876 B2 describe such directional couplers.
[0048] In any embodiment, if Figure 3 As shown, a dielectric 11 is provided between the first inner conductor 2 and the second inner conductor 4 to isolate the first inner conductor 2 and the second inner conductor 4 to avoid mutual influence therebetween, thereby ensuring that the power transmission of multiple DC power sources does not interfere with each other on the basis of a simple circuit structure.
[0049] In any embodiment, the first inner conductor 2 and the second inner conductor 4 are both coated with a dielectric 11, and the dielectric 11 can be placed between the two inner conductors or between the inner conductor and the outer conductor. The material of the dielectric may be different between the two inner conductors and between the inner conductor and the outer conductor. For example, between the inner conductors, a solid material can be used, which can also be used as a support for the two inner conductors. Between the inner conductor and the outer conductor, for example, air, liquid, or a combination of one of the two and a solid can be used to isolate different conductors from each other.
[0050] Such solid dielectrics may preferably have materials that are compatible with other materials in terms of their properties, such as relative permittivity and loss angle. For example, the material used may be PTFE (polytetrafluoroethylene) or aluminum oxide. In addition, when both inner conductors are subjected to common-mode excitation, the HF electric field is mainly expressed between the inner conductor and the outer conductor. Therefore, if the two inner conductors are at a very small distance from each other, are at the same HF potential and have only an essential difference in DC potential, the dielectric material between the inner conductor surfaces has very little effect on the characteristics of the connecting device. This further enhances the effect that the connecting device for HF power signals is the same as that of a conventional coaxial cable. For example, a "very small distance" refers to a distance of less than or equal to 3 mm, in particular less than or equal to 1 mm, and in particular less than or equal to 0.5 mm.
[0051] In any embodiment, if Figure 3 As shown, the first inner conductor 2 and the second inner conductor 4 can be designed as two semiconductors with a semicircular cross section, which are separated from each other by a dielectric 11. This embodiment provides the advantage of a uniform electric field between the inner conductor and the outer conductor of the connecting device.
[0052] In any embodiment, the connection arrangement 1 may have more than two inner conductors separated from each other by a dielectric and forming a circular cross section together. In this way, more than two DC voltages may be provided to the plasma with low losses and a predetermined impedance.
[0053] In any embodiment, the power supply system 10 can be a plasma power supply system, including a first DC power supply, a second DC power supply, an HF power supply, and a plurality of DC block capacitors (C1, C2) and HF block inductors (L1, L2), and also has a connecting device 1. In such a system, connections are established between the first DC power supply and the first inner conductor 2 of the connecting device, the second DC power supply 8 and the second inner conductor 4 of the connecting device, and the HF power supply 3 and the two inner conductors. The inductor is located between the DC power supply and the inner conductor of the connecting device. The capacitor is located between the HF power supply and the inner conductor of the connecting device.
[0054] Then, a load (e.g., a plasma process component) can be connected to the connection device, which requires feeding the above three signals. Figure 2b As shown, such a plasma process system 12 may also have an impedance matching circuit 7, which may be connected to the connection device. The connection device may then be used to connect a possible load to the impedance matching circuit 7. In such an overall system, a load in the form of a plasma process component 6 is connected to the plasma process power supply system 10, and such an overall system may then be described as a possible embodiment of the plasma process system 12.
[0055] Furthermore, the connection device can be used for a part of a plasma process system 12. This part of the plasma process system can have an impedance matching circuit 7, a plasma process component 6 and a connection device 1. The connection device 1 can establish a connection between the impedance matching circuit 7 and the plasma process component 6. Through the connection device, the plasma process component 6 can be fed with two DC voltages and an HF power signal, which can be provided by two DC power supplies and an HF power supply. To this end, the HF power supply can be connected to the connection device through the impedance matching circuit 7. There are multiple options for feeding through two DC power supplies. On the one hand, the two DC power supplies can be connected to the connection device 1 through the impedance matching circuit 7. On the other hand, the DC power supply can be connected to the connection device 1 after the impedance matching circuit 7. Feeding through the impedance matching circuit 7 allows the impedance matching circuit to be closer to the plasma process component 6, thereby providing advantages in terms of bandwidth and impedance matching. The advantage of feeding after the impedance matching circuit is that if the impedance matching circuit 7 already has protection measures such as DC block capacitors, then the protection measures outside the impedance matching circuit can be omitted. In addition, the connection device 1 can be used for a method of operating a plasma process in a plasma process component, in particular after the above-mentioned plasma process component. The connection device can be part of a plasma process system, in particular the above-mentioned plasma process system. Such a process may involve several steps. First, the plasma process component may be fed with two DC voltages and an HF power signal. To this end, the first DC voltage may be supplied to the plasma process component by a first DC power source via a first inner conductor of the connecting device. At the same time, the second DC voltage may be supplied to the plasma process component by a second DC power source via a second inner conductor of the connecting device. At the same time as these two supplies, the HF power signal may be transmitted from the HF power source to the plasma process component via the two inner conductors of the connecting device.
[0056] Following these steps, a plasma can be generated in a plasma process assembly.
Claims
1. A connection device (1), characterized in that: include: A first inner conductor (2); A second inner conductor (4); An outer conductor (9), the outer conductor (9) surrounds the first inner conductor (2) and the second inner conductor (4) at the same time.
2. The connection device according to claim 1, characterized in that: The connecting device comprises a dielectric (11), wherein the dielectric (11) is arranged between i. the first inner conductor (2) and the second inner conductor (4), ii. Inner conductor and said outer conductor (9).
3. The connection device according to claim 1, characterized in that: The material of the dielectric (11) between the first inner conductor (2) and the second inner conductor (4) is different from the material of the dielectric (11) between the inner conductor and the outer conductor (9).
4. The connection device according to claim 1, characterized in that: The first inner conductor (2) and the second inner conductor (4) are separated by a dielectric (11).
5. The connection device according to claim 4, characterized in that: The cross sections of the first inner conductor (2) and the second inner conductor (4) are both semicircular.
6. The connection device according to any one of claims 1 to 3, characterized in that: A sensor (13) is also included, the sensor being capable of detecting at least one of current or voltage.
7. The connection device according to claim 4 or 5, characterized in that: The connecting device comprises a third inner conductor, and the third inner conductor is isolated from the first inner conductor (2) or the second inner conductor (4).
8. A power supply system, comprising a first DC power supply (5), a second DC power supply (8), a high-frequency power supply (3) and a connecting device (1) as claimed in any one of claims 1 to 7, characterized in that: The connection between the first DC power source (5) and the first inner conductor (2); connection between the second DC power source (8) and the second inner conductor (4); The high-frequency power source (3) is connected to the first inner conductor (2) and the second inner conductor (4) at the same time.
9. The power supply system according to claim 8, characterized in that: It also includes an impedance matching circuit (7), wherein the impedance matching circuit (7) is connected to the first DC power supply (5), the second DC power supply (8) and the high-frequency power supply (3) through the connecting device (1).
10. The power supply system according to claim 9, characterized in that: The impedance matching circuit (7) is connected to a load via the connecting device (1).
11. The power supply system according to any one of claims 8 to 10, characterized in that: The high-frequency power source (3) can be coupled to the first inner conductor (2) and the second inner conductor (4) by means of common-mode capacitive coupling.
12. A plasma processing system (12), characterized in that: It comprises the connection device (1) as described in any one of claims 1 to 7 and / or the power supply system (10) as described in any one of claims 8 to 11, and also comprises at least two electrodes, wherein the electrodes are at least respectively connected to the first inner conductor (2) and the second inner conductor (4).
13. A plasma processing system (12), characterized in that: It comprises the connection device (1) as claimed in any one of claims 1 to 7, and also comprises a plasma process component (6) and an impedance matching circuit (7), wherein the plasma process component (6) is connected to the impedance matching circuit (7) via the connection device (1).