Vapor deposition equipment

Abstract

The utility model discloses vapor deposition equipment which comprises a reaction cavity, a gas spraying head arranged on the upper side of the interior of the reaction cavity, a base arranged opposite to the gas spraying head and an ammonia gas cracker, the upper surface of the base is used for bearing a substrate, the ammonia gas cracker comprises a laser transmitter and an ammonia gas input pipeline, and the ammonia gas input pipeline is used for inputting ammonia gas into the reaction cavity. The laser transmitter is arranged above the gas spraying head, and a gas outlet section of the ammonia gas input pipeline is arranged in the gas spraying head; the ammonia gas input pipeline transmits ammonia gas to a laser light path emitted by the laser emitter, the laser irradiates the ammonia gas to promote the cracking reaction of the ammonia gas, and groups generated by cracking of the ammonia gas are diffused to the surface of the substrate and are subjected to deposition reaction with reaction gas on the surface of the substrate; according to the scheme, sufficient ammonia cracking groups still react with the reaction gas at a relatively low heating temperature, so that the heating temperature of the heater is reduced, and the energy consumption is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a vapor deposition device. Background Art

[0002] Vapor deposition technology is used to deposit thin films onto substrates, such as semiconductor substrates. Metal-organic chemical vapor deposition (MOCVD) uses organic compounds of Group III elements and ammonia or oxygen as crystal growth sources, growing various compound semiconductor thin films via vapor phase epitaxy on substrates via a thermal decomposition reaction.

[0003] In the process of thin film deposition using MOCVD technology, the first reaction gas (usually an organic metal precursor) and the second reaction gas (such as ammonia, etc.) are respectively delivered to the top of the substrate in the reaction chamber through the first reaction gas delivery pipe and the second reaction gas delivery pipe. The substrate is supported by a base, and the base is heated to a high temperature, so that different reaction gases are decomposed above the substrate and chemical reactions occur to generate thin films deposited on the upper surface of the substrate. This process needs to be carried out at a high temperature, usually reaching hundreds to thousands of degrees Celsius. At present, a heater is usually used to heat the base to provide sufficient energy for the ammonia to undergo a cracking reaction to produce the cracked groups and other reaction gases to undergo deposition reactions, but this heating method has high energy consumption.

[0004] Therefore, the purpose of the present invention is to provide a vapor deposition device that reduces the heating energy consumption required for cracking ammonia molecules. Utility Model Content

[0005] In view of the shortcomings of the existing technology, the utility model provides a vapor deposition device to make up for the defects of the existing technology that when cracking ammonia, a heater needs to be heated to a high temperature, resulting in high energy consumption.

[0006] To achieve the above-mentioned object, the present invention provides a vapor deposition apparatus, comprising: a reaction chamber, a gas shower head disposed on the upper side of the reaction chamber, and a base disposed opposite the gas shower head, wherein the upper surface of the base is used to support a substrate, and further comprising:

[0007] An ammonia cracker, comprising a laser emitter and an ammonia input pipeline, wherein the laser emitter is arranged above a gas shower head, and the gas outlet section of the ammonia input pipeline is arranged in the gas shower head;

[0008] The ammonia gas input pipeline transmits ammonia gas to the laser light path emitted by the laser emitter. The laser irradiates the ammonia gas to promote the cracking reaction of the ammonia gas. The radicals generated by the cracking of the ammonia gas diffuse to the surface of the substrate and react with the reaction gas on the substrate surface to deposit.

[0009] Optionally, the laser light path includes multiple single laser beams arranged to form a laser surface to irradiate the ammonia gas.

[0010] Optionally, the wavelength of the laser emitter is 5 μm to 15 μm.

[0011] Optionally, the laser light path is at least partially located below the gas shower head and above the substrate; the ammonia gas flows out of the gas shower head to below the gas shower head after passing through the ammonia gas input pipeline, so as to meet the laser light path below the gas shower head for cracking.

[0012] Optionally, the laser light path radiates from the edge of the gas shower head to the center and / or from the center of the gas shower head to the edge, and the ammonia input pipeline includes multiple sub-pipelines dispersedly distributed in the gas shower head, transporting ammonia from outside the reaction chamber to the bottom of the gas shower head.

[0013] Optionally, the ammonia cracker further comprises a reflector, and the laser light emitted by the laser emitter propagates from top to bottom and is adjusted by the reflector to propagate parallel to the lower surface of the gas shower head.

[0014] Optionally, the laser emitted by the laser emitter is transmitted along a first channel opened inside the gas shower head and passing through the gas shower head from top to bottom, reaching the bottom of the gas shower head; the reflector is arranged at the outlet of the first channel below the gas shower head and is fixedly connected to the lower surface of the gas shower head.

[0015] Optionally, a protective cover is vertically connected between the side wall of the reflector and the lower surface of the gas shower head to prevent reaction products from being deposited on the surface of the reflector.

[0016] Optionally, the observation window of the reaction chamber is the entrance of the first channel, and the laser emitted by the laser emitter passes through the observation window into the gas shower head and is then transmitted to the bottom of the gas shower head.

[0017] Optionally, the reflector is arranged at a distance of 25 mm to 100 mm from the lower surface of the gas shower head, or at a distance of 0.1 h to 0.5 h from the lower surface of the gas shower head, where h is the distance between the lower surface of the gas shower head and the substrate.

[0018] Optionally, the laser emitted by the laser emitter is transmitted along a second channel of a ring cover opened on the outside of the gas shower head and from top to bottom through the ring cover to reach the interior of the reaction chamber; the reflector is arranged at the outlet of the second channel below the ring cover and is connected and fixed to the side wall of the reaction chamber or the ring cover, so as to horizontally introduce the laser into the bottom of the gas shower head.

[0019] Optionally, an annular glass is provided between the gas shower head and the lifting ring of the reaction chamber, and the laser emitted by the laser emitter is transmitted along the second channel and adjusted by the reflector before passing through the annular glass and reaching below the gas shower head.

[0020] Optionally, at least one arc-shaped laser surface is formed by arranging multiple single laser beams.

[0021] Optionally, the laser emitted by the laser emitter is transmitted along a third channel opened inside the gas shower head and enters the interior of the gas shower head; the gas outlet section of the ammonia input pipeline is connected to the third channel, and the ammonia is transmitted from the outside of the reaction chamber to the third channel inside the gas shower head to crack the ammonia inside the gas shower head.

[0022] Optionally, the third channel is a first through hole provided in the gas shower head, the first through hole passes through the gas shower head from top to bottom, the outlet of the first through hole is connected to the interior of the reaction chamber, the radicals generated by the decomposition of the ammonia enter the interior of the reaction chamber through the first through hole and diffuse to the surface of the substrate; the outlet section of the ammonia input pipeline is a second through hole connected to the side wall of the first through hole.

[0023] Optionally, a laser processing device for absorbing or reflecting laser light is provided at the outlet of the third channel to prevent the laser light from directly irradiating the substrate.

[0024] Optionally, part of the ammonia input pipeline is located above the gas shower head; the laser emitted by the laser emitter is transmitted along the fourth channel above the gas shower head and reaches the ammonia input pipeline above the gas shower head to crack the ammonia above the gas shower head.

[0025] Optionally, the ammonia input pipeline further includes a quartz tube, which is arranged above the gas shower head. The laser emitted by the laser emitter and the ammonia transmitted by the ammonia input pipeline reach the quartz tube, and an ammonia cracking reaction occurs in the quartz tube. The radicals produced by the cracking enter the reaction chamber through the gas outlet section of the ammonia input pipeline.

[0026] Compared with the prior art, the present invention has at least the following advantages and beneficial effects:

[0027] This solution is provided with an ammonia cracker, which includes a laser emitter and an ammonia input pipeline. The ammonia input pipeline transmits ammonia to the laser light path emitted by the laser emitter, so that the laser irradiates the ammonia to promote the cracking of ammonia molecules, thereby causing the ammonia cracking groups to diffuse to the substrate surface and react with the reaction gas. After adopting this solution, the laser is used to promote the cracking of ammonia molecules. At a lower heater temperature, there are still sufficient ammonia cracking groups in the reaction chamber to react with the reaction gas, thereby improving the utilization rate of ammonia, reducing the heating temperature of the heater, and reducing energy consumption.

[0028] This solution controls the laser to decompose ammonia above the gas shower head, or allows the laser to enter the gas shower head from top to bottom to decompose ammonia inside or below the gas shower head. This eliminates the need to drill holes in the side walls of the reaction chamber, reduces the impact of the laser on the annular airflow in the reaction chamber, and thus reduces the impact on the uniformity of film formation on the substrate.

[0029] Furthermore, this solution utilizes the original structure of the reaction chamber, such as the observation window and the purge gas channel, to set up the laser emitter and the ammonia gas input pipeline. This does not require changing the structure of the reaction chamber, is easy to operate, and reduces the impact on the energy field in the reaction chamber.

[0030] This solution allows the laser to be transmitted from top to bottom to the bottom of the gas shower head by drilling holes in the ring cover, and sets the number and position of the laser surfaces irradiating ammonia gas, so that ammonia gas in a specified area can be irradiated as needed, thereby improving the cracking efficiency of ammonia gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic structural diagram of a vapor deposition device in the prior art;

[0032] Figure 2 This is a schematic structural diagram of a first embodiment of a vapor deposition device according to the present invention;

[0033] Figure 3 This is a schematic structural diagram of a second embodiment of the vapor deposition apparatus of the present invention;

[0034] Figure 4 This is a schematic structural diagram of a third embodiment of the vapor deposition apparatus of the present invention;

[0035] Figure 5 This is a structural diagram of embodiment 4 of the vapor deposition equipment of the present utility model. DETAILED DESCRIPTION

[0036] The following will be combined with the accompanying drawings of the embodiments of the present invention to describe in detail the technical solutions, structural features, objectives, and functions of the embodiments of the present invention. The description of these embodiments is intended to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.

[0037] It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions. They are only used to conveniently and clearly assist in explaining the implementation methods of the present invention, and are not used to limit the conditions for the implementation of the present invention. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0038] It should be noted that, in the present invention, relational terms such as first and second, etc. are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus comprising a series of elements includes not only the elements explicitly listed, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or apparatus.

[0039] like Figure 1 As shown, a vapor deposition device in the prior art includes: a reaction chamber 100, a gas shower head 110 arranged on the upper side of the reaction chamber 100, for inputting reaction gas into the reaction chamber 100, and a base 120 arranged opposite to the gas shower head 110, the upper surface of the base 120 is used to support a substrate 130; a heater 190 is provided under the base 120, and the heater 190 provides heating to make the base 120 and the substrate 130 reach a certain temperature, so that the reaction gas in the reaction chamber 100 undergoes a deposition reaction on the upper surface of the substrate 130 to generate a semiconductor thin film.

[0040] The reaction gases generally include ammonia and other reaction gases, which are generally organometallic compounds (MO) sources, such as TMGa (trimethylgallium), TMAl (trimethylaluminum), and TMIn (trimethylindium). Ammonia molecules must first be decomposed at high temperature to produce radicals that can participate in the deposition reaction, and then react with other reaction gases to form a deposition reaction on the upper surface of the substrate 130.

[0041] As described in the background technology, the current vapor deposition equipment needs to heat the temperature of the base 120 to a certain high temperature through the heater 190 to provide sufficient energy for the cracking of ammonia molecules. In this process, the energy consumption of the heater 190 is relatively high, and a large flow of ammonia needs to be introduced into the reaction chamber 100. The utilization rate of ammonia is low, resulting in excessively high costs for the entire vapor deposition process. In order to solve this technical problem, the present invention proposes a vapor deposition device that uses laser irradiation of ammonia to provide energy to promote the cracking of ammonia molecules. The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0042] like Figures 2 to 5 As shown, the utility model provides a vapor deposition device, comprising: a reaction chamber 200, a gas shower head 210 arranged on the upper side of the reaction chamber 200, and a base 220 arranged opposite to the gas shower head 210, the upper surface of the base 220 being used to carry a substrate 230; an ammonia cracker 140, the ammonia cracker comprising a laser emitter 141 and an ammonia input pipeline 142, the laser emitter 141 being arranged above the gas shower head 210 and being used to emit laser to form a laser light path, the inlet section of the ammonia input pipeline 142 being connected to the ammonia source outside the reaction chamber 200, and the outlet section being arranged on the gas shower head 210. 0, after ammonia is transmitted from the ammonia source to the gas shower head 210 through the ammonia input line 142, it diffuses inside or below the gas shower head 210 to form an ammonia diffusion path, and finally forms an ammonia transmission path including the ammonia input line 142 and the ammonia diffusion path. The ammonia transmission path intersects with the laser light path, so that during the diffusion process, the ammonia gas intersects with the laser light path formed by the laser emitter emitting the laser. As a result, the laser emitted by the laser emitter promotes the cracking reaction of the ammonia by irradiating the ammonia gas. The radicals generated by the cracking of the ammonia gas diffuse to the surface of the substrate 230 and react with the MO gas on the surface of the substrate 230 to form a deposition reaction.

[0043] The intersection of the ammonia transmission path and the laser light path can be set above the gas shower head 210 (the ammonia input pipeline 142 intersects the laser light path), can also be set in the gas shower head 210 (the ammonia input pipeline 142 or the ammonia diffusion path in the gas shower head 210 intersects the laser light path), or can be set below the gas shower head 210 (the ammonia diffusion path below the gas shower 210 intersects the laser light path), so that the ammonia cracking reaction occurs above the gas shower head 210, in the gas shower head 210, or below the gas shower head 210, respectively.

[0044] The following is a detailed description of the drawings and embodiments.

[0045] Example 1

[0046] like Figure 2 As shown, the ammonia cracker 140 of this embodiment includes: a laser emitter 141, an ammonia input pipeline 142, and a reflector 143 for changing the propagation path of the laser emitted by the laser emitter 141; the laser emitter 141 is arranged above the gas shower head 210, and is used to emit laser light to form a laser light path. The laser emitter 141 is facing the observation window 150 of the reaction chamber 200. The observation window 150 is a strip-shaped quartz glass window with a certain length in the direction perpendicular to the paper surface, and there is a hollow channel between the observation window 150 and the base 220. Through the observation window 150, infrared temperature measurement and other methods can be used to monitor the temperature. The temperature of the substrate 230 on the upper surface of the base 220 is controlled by the reflector 143. Therefore, the laser light emitted by the laser emitter 141 can also pass through the observation window 150 and the hollow channel below it to reach the bottom of the gas shower head 210 vertically. The reflector 143 is arranged in the laser light path, is located below the gas shower head 210, and is fixedly connected to the lower surface of the gas shower head 210. The reflector 143 forms an angle of 45° with the propagation direction of the laser light. Therefore, after the laser light emitted by the laser emitter 141 propagates from top to bottom to the reflector 143, the propagation direction of the laser light is adjusted by the reflector 143 to propagate parallel to the lower surface of the gas shower head 210. The length of the observation window 150 can be substantially equal to the length of the diameter of the upper surface of the gas shower head 210, and the laser emitter 141 is located at the center of the observation window 150, so the laser light path emitted by the laser emitter 141 can radiate from the center below the gas shower head 210 to the edge; the inlet section of the ammonia input pipeline 142 is connected to the ammonia source outside the reaction chamber 200, and the outlet section of the ammonia input pipeline 142 is set in the gas shower head 210, directly connected to the area below the gas shower head 210, and the ammonia gas passes through the ammonia input pipeline 1 An ammonia gas source 42 is transmitted from the outside of the reaction chamber 200 to the bottom of the gas shower head 210 and then diffuses below the gas shower head 210 to form an ammonia diffusion path; the ammonia diffusion path intersects with the laser light path of the laser. The laser irradiates the ammonia gas transmitted to the bottom of the gas shower head 210 through the ammonia input pipe 142. Under the irradiation of the laser, the ammonia molecules undergo a cracking reaction to generate radicals, which diffuse to the surface of the substrate 230 and undergo a deposition reaction with other reaction gases on the surface of the substrate 230 to form a semiconductor film on the surface of the substrate 230.

[0047] The ammonia input pipeline 142 may further include multiple sub-pipelines, which are dispersedly distributed in the gas shower head 210. The inlet section of each sub-pipeline is connected to the ammonia source, and the outlet section is provided in the gas shower head 210 to transmit the ammonia to the bottom of the gas shower head 210. The outlet sections of the sub-pipelines are provided at different positions, and each sub-pipeline corresponds to a different ammonia diffusion path. By providing multiple sub-pipelines, the number of ammonia diffusion paths below the gas shower head 210 is increased, thereby increasing the outlet area and diffusion area of ​​ammonia below the gas shower head 210. The laser light path intersects with more ammonia diffusion paths, allowing the laser to irradiate more ammonia to promote its cracking reaction.

[0048] The gas showerhead 210 is also provided with a reaction gas channel. The gas inlet section of the reaction gas channel is connected to the reaction gas source, and the gas outlet section of the reaction gas channel is also provided in the gas showerhead 210. This allows the reaction gas to be transferred from the reaction gas source to the bottom of the gas showerhead 210. The reaction gas diffuses from the bottom of the gas showerhead 210 to the surface of the substrate 230, where it undergoes a deposition reaction with the radicals after the ammonia cracking to form a semiconductor thin film. Similar to the ammonia inlet pipeline 142, the reaction gas channel can also include multiple sub-channels to increase the efficiency of the reaction gas transmission. In other embodiments, the gas showerhead 210 can also include multiple reaction gas channels, each corresponding to a plurality of reaction gas sources, thereby transmitting different reaction gases to the reaction chamber 200.

[0049] The laser irradiation of ammonia promotes the cracking reaction of ammonia molecules, mainly by utilizing laser resonance to excite ammonia molecules. Therefore, in order to achieve a better effect of laser-promoted cracking of ammonia molecules, the wavelength of the laser is set to 5μm to 15μm. More preferably, the laser wavelength is set to any one of the resonance wavelengths of ammonia molecules, such as 9.219μm, 10.35μm and 10.719μm.

[0050] To expand the area of ​​laser irradiation of ammonia gas, multiple laser emitters 141 are arranged above the gas showerhead 210 to emit multiple single laser beams. These single laser beams are arranged to form a laser plane. This laser plane propagates through the observation window 150 toward the bottom of the gas showerhead 210. After being redirected by the reflector 143, it irradiates the ammonia diffusion path below the gas showerhead 210. To change the propagation path of the laser plane, the reflective surface of the reflector 143 is sized to match the width of the laser plane. The laser emitters 141 are positioned so that their emitted laser light avoids the inherent structure of the reaction chamber 200, thereby reducing the impact of the laser light on the energy field within the reaction chamber 200 and improving laser utilization. In other embodiments, the laser light emitted by a single laser emitter 141 can be split to generate multiple single laser beams, thereby forming the laser plane.

[0051] Furthermore, to further expand the area of ​​ammonia gas irradiated by the laser, the reflectors 143 are arranged in different directions on the laser optical path. For example, reflectors 143 may be arranged at angles of 45° and -45° to the propagation direction of the laser, respectively. The reflectors 143 arranged in the two directions may be alternately arranged on the optical path of the laser surface. Alternatively, the positions of the reflectors 143 arranged in the two directions may be set according to the distribution of the outlet sections of the ammonia gas input pipelines 142 in the gas shower head 210. For example, if the ammonia gas input pipelines 142 are densely distributed in a certain area of ​​the gas shower head 210, while the ammonia gas input pipelines 142 are sparsely distributed in an area symmetrical to the axis of the observation window 150, the reflectors 143 may be arranged at angles of 45° or -45° to the propagation direction of the laser. This allows the laser to illuminate the area with dense ammonia gas input pipelines 142 rather than the area with sparse ammonia gas input pipelines, thereby irradiating more ammonia gas.

[0052] In this embodiment, laser emitter 141 emits a laser beam that propagates downward from top to bottom, and reflector 143 adjusts the laser beam's propagation direction to be horizontal, so that the laser beam path intersects the ammonia diffusion path below the gas showerhead 210. This allows the laser beam to illuminate the ammonia gas that has been transmitted through ammonia gas input line 142 and diffused below the gas showerhead 210, promoting a cracking reaction of ammonia molecules. This reduces the heating temperature of the heater below the susceptor 220 and improves ammonia utilization. This ensures that, even when the heater temperature is lower than the originally set temperature, sufficient ammonia cracking groups within the reaction chamber 200 react with the reaction gas to undergo a deposition reaction on the surface of the substrate 230.

[0053] Furthermore, the reflector 143 is positioned 25 mm to 100 mm from the lower surface of the gas showerhead 210. Since the temperature of the reflector 143 is much lower than that of the substrate 230, if the reflector 143 is too close to the substrate 230, the high-temperature substrate 230 may affect the operation of the reflector 143. On the other hand, after flowing out of the ammonia gas input line 142, the ammonia gas diffuses below the gas showerhead 210, thereby filling the entire space within the reaction chamber 200. If the reflector 143 is too close to the lower surface of the gas showerhead 210, the ammonia gas will not be fully diffused after flowing out of the gas showerhead 210. The area of ​​the ammonia diffusion path where it intersects with the laser light path is too small, and the ammonia gas that can be irradiated by the laser is too small, resulting in low laser utilization. Therefore, positioning the reflector 143 25 mm to 100 mm from the lower surface of the gas showerhead to allow the ammonia gas to properly diffuse before being irradiated by the laser is a more efficient option.

[0054] In addition, when the types and specifications of the reaction chamber are different, the reflector 143 may be disposed 0.1h to 0.5h away from the lower surface of the gas shower head 210 , where h is the distance between the lower surface of the gas shower head 210 and the substrate 230 .

[0055] In addition, an anti-deposition device is provided on the reflector 143 to prevent ammonia cracking radicals from reacting with the reaction gas on the surface of the reflector 143 to deposit reaction products on the surface of the reflector 143, thereby affecting the reflective effect of the reflector 143. The anti-deposition device can be a light-transmitting plate vertically connected between the side wall of the reflector 143 and the lower surface of the gas shower head 210 as a protective cover. The light-transmitting plate does not affect the emission of laser light after reflection from the reflector 143, and it also prevents ammonia, radicals, and other reaction gases from reaching the upper part of the reflector 143. In other embodiments, a purge gas channel in the gas shower head 210 may also be used to prevent deposition on the reflector 143: the purge gas channel is used to provide purge gas to the hollow channel below the observation window 150, thereby preventing reaction gases and the like from entering the hollow channel and preventing reaction gases from being deposited on the observation window 150 and affecting the temperature of the substrate 230 monitored through the observation window 150. In this embodiment, with the help of the purge gas, the reaction gases and the like above the reflector 143 can also be blown away, thereby preventing deposition on the surface of the reflector 143.

[0056] In this embodiment, the observation window 150 of the reaction chamber 200 is used as the entrance for the laser to pass through the gas shower head 210. This eliminates the need to re-open a laser propagation channel in the reaction chamber 200 or change the structure of the gas shower head 210. This does not significantly affect the energy field distribution and the annular airflow distribution within the reaction chamber 200, thereby reducing the impact on the uniformity of film formation on the surface of the substrate 230. Of course, in other embodiments, if there are other channels opened within the gas shower head 210 and passing through the gas shower head 210 from top to bottom, these channels can also be used as the top-to-bottom propagation channels for the laser. In this case, the reflector 143 is positioned at the outlet of the channel below the gas shower head 210.

[0057] Although in this embodiment, the laser emitter 141 is disposed above the gas shower head 210 and the laser light emitted thereby directly passes through the observation window 150 and propagates downward from top to bottom to the reflector 143 below the gas shower head 210 , this does not limit the position of the laser emitter 141 . In other embodiments, the laser emitter 141 may be disposed at any position, and it is only necessary to utilize various reflective surfaces to ultimately allow the laser light to pass through the observation window 150 downward from top to bottom and reach the reflector 143 .

[0058] Example 2

[0059] like Figure 3As shown, the difference between this embodiment and the above embodiment is that the laser emitter 141 is arranged above the ring cover 160 outside the gas shower head 210, and is used to emit laser to form a laser light path. The ring cover 160 is provided with a through hole that penetrates the ring cover 160 from top to bottom. The laser emitter 141 is facing the through hole, so that the emitted laser is transmitted from top to bottom along the through hole and enters the interior of the reaction chamber 200. One end of the through hole is connected to the outside of the reaction chamber 200, and the other end is connected to the interior of the reaction chamber 200. The through hole is filled with a light-transmitting material, which ensures the sealing of the reaction chamber 200 without affecting the laser passing through the through hole; the reflector 143 is arranged below the ring cover 160, facing the through hole, and is in the laser light path emitted by the laser emitter 141. The reflector 143 is fixed to the side wall of the reaction chamber 200 or the ring cover 160 above; the reflector 143 is at a 45° angle to the propagation direction of the laser, so that the laser emitter 141 emits After the laser propagates from top to bottom to the reflector 143, the propagation direction of the laser is adjusted to be horizontal by reflection through the reflector 143, so that the laser propagates horizontally to the bottom of the gas shower head 210, thereby radiating from the edge to the center below the gas shower head 210; the air inlet section of the ammonia input pipeline 142 is connected to the ammonia source, and the air outlet section is set in the gas shower head 210, directly connected to the area below the gas shower head 210, and ammonia is discharged from the reaction chamber through the ammonia input pipeline 142. The ammonia source outside 200 is transmitted to the bottom of the gas shower head 210 and diffuses below the gas shower head 210 to form an ammonia diffusion path; the laser light, whose propagation direction is changed by the reflector 143, propagates from the edge to the center below the gas shower head 210. The laser light path of the laser light intersects with the ammonia diffusion path below the gas shower head 210. The laser light irradiates the ammonia gas transmitted to the bottom of the gas shower head 210, and the ammonia gas undergoes a cracking reaction under the laser irradiation to produce radicals.

[0060] The reaction chamber 200 of this embodiment further includes a lifting ring 170, which is disposed in the reaction chamber 200 and below the gas shower head 210. The lifting ring 170 is arranged in an annular shape along the side wall of the reaction chamber 200. The lifting ring 170 can be lifted up and down to expose or cover a substrate transfer port provided on the side wall of the reaction chamber 200, so that the substrate 230 can be transferred into or out of the reaction chamber 200 through the substrate transfer port; an annular quartz glass 180 is disposed between the gas shower head 210 and the lifting ring 170, and is arranged in an annular shape along the side wall of the reaction chamber 200, and is fixedly connected to the gas shower head 210, or is connected to the lifting ring 170 so as to be lifted and lowered with the lifting ring 170; the laser emitted by the laser emitter 141 is adjusted by the reflector 143 to transmit the laser beam; After the propagation direction is horizontal, it propagates from the edge to the center of the reaction chamber 200. The reflector 143 is arranged on the outside of the annular glass 180. Therefore, during the propagation process, the laser passes through the annular glass 180 from the edge and then continues to propagate toward the center. By providing the annular glass 180, the high-temperature reaction gas and the ammonia molecule cracking groups in the reaction chamber 200 are prevented from flowing into the bottom of the ring cover 160 through the gap between the lifting ring 170 and the gas shower head 210, and then contacting the side wall of the reaction chamber 200, affecting the uniformity of the annular airflow in the reaction chamber 200. In addition, since the temperature of the side wall of the reaction chamber 200 is relatively low, the provision of the annular glass 180 prevents the temperature and heat of the high-temperature reaction gas and the ammonia molecule cracking groups from being affected by the low-temperature side wall of the reaction chamber 200.

[0061] In this embodiment, by opening a through hole that passes through the ring cover 160 from top to bottom and filling it with a transparent material as a laser transmission channel, there is no need to open a hole in the side wall of the reaction chamber 200. Compared with the method of directly opening a hole in the side wall of the reaction chamber 200, this solution causes fewer structural changes to the reaction chamber 200 and will not affect the annular airflow distribution in the reaction chamber 200, thereby reducing the impact on the uniformity of film formation on the surface of the substrate 230.

[0062] Similar to the first embodiment, multiple laser emitters 141 are arranged in an arc shape above the ring cover 160. Thus, the laser surface formed by the multiple single laser beams emitted by these laser emitters 141 is an arc surface. The multiple laser emitters 141 face the through hole that penetrates the ring cover 160. This through hole is also arc-shaped or annular. Therefore, the laser surface enters the reaction chamber 200 through this through hole, and after being reflected by the annular glass 180, it is adjusted to a horizontal laser surface to illuminate the ammonia gas below the gas shower head 210. The laser light path of this laser surface intersects the ammonia gas diffusion path below the gas shower head 210. Alternatively, in other embodiments, it is feasible to split the laser light emitted by a single laser emitter 141 to obtain an arc-shaped laser surface.

[0063] Furthermore, multiple curved laser surfaces can be provided. Specifically, multiple groups of laser emitters 141 arranged in an arc shape can be provided above the ring cover 160 to generate curved laser surfaces. Alternatively, multiple laser emitters 141 can be provided, and each laser emitter 141 can be split to generate curved laser surfaces. These curved laser surfaces are distributed above the ring cover 160 without overlapping, thereby expanding the area of ​​laser irradiation of the ammonia gas. By adjusting the position of the curved laser surface, the irradiated area below the gas shower head 210 can be controlled. For example, a semicircular laser surface can be provided to cover the entire area below the gas shower head 210. Alternatively, a specific area below the gas shower head 210 can be designated as a key area. The location of this area can also be determined based on the positional distribution of the outlet section of the ammonia gas input pipeline 142 within the gas shower head 210. By adjusting the position of the curved laser surface, more laser light can be directed to the ammonia diffusion path in this key area. Alternatively, laser surfaces of other curvatures and positions can be provided to cover different areas.

[0064] Example 3

[0065] like Figure 4 As shown, the difference between this embodiment and the above embodiment is that the outlet section of the ammonia gas input pipe 142 is arranged inside the gas shower head 210 and communicates with the hollow channel below the observation window 150. The inlet section of the ammonia gas input pipe 142 is communicated with the ammonia gas source outside the reaction chamber 200, so that ammonia gas is transmitted from the ammonia gas source to the hollow channel below the observation window 150 in the gas shower head 210 through the ammonia gas input pipe 142 and diffuses in the hollow channel to form an ammonia gas diffusion path. The laser light path intersects with the ammonia gas diffusion path in the hollow channel. The laser light transmitted along the hollow channel irradiates the diffused ammonia gas, causing the ammonia gas molecules to decompose and generate radicals. The generated radicals continue to diffuse along the hollow channel to below the gas shower head 210 and then diffuse to the surface of the substrate 230. They undergo a deposition reaction on the surface of the substrate 230 with other reaction gases, thereby forming a semiconductor thin film on the surface of the substrate 230.

[0066] In some embodiments, the purge gas channel of the reaction chamber 200 can be used as the outlet section of the ammonia gas input line 142 to provide a transmission path for the ammonia gas to the laser. Specifically, if the purge gas channel is used as the outlet section of the ammonia gas input line 142, there is no need to drill new holes in the gas showerhead 210, simplifying operation. Furthermore, ammonia can be used as the purge gas to prevent the reaction gas from flowing into the hollow channel below the observation window 150.

[0067] Although the present embodiment utilizes the observation window 150 and the hollow channel therebelow to transmit laser light and provide a diffusion channel for ammonia cracking radicals, in other embodiments, new holes may be opened to serve as both the laser transmission channel and the outlet section of the ammonia input line 142. Specifically, a first through hole is provided as the laser transmission channel, and a second through hole is provided as the outlet section of the ammonia input line 142. The first through hole penetrates the gas showerhead 210 from top to bottom, and the outlet of the first through hole communicates with the interior of the reaction chamber 200. One end of the second through hole communicates with the sidewall of the first through hole, and the other end communicates with an ammonia source outside the reaction chamber 200. Ammonia is transmitted to the first through hole, forming an ammonia diffusion path in the first through hole. This ammonia diffusion path intersects with the laser tube optical path within the first through hole. Laser irradiation on the diffused ammonia promotes the cracking reaction of ammonia molecules, and radicals generated by the cracking of ammonia continue to diffuse into the reaction chamber 200 through the first through hole.

[0068] Furthermore, a laser processing device for absorbing or reflecting laser light is provided at the outlet of the hollow channel or the first through hole below the observation window 150 to prevent the laser light from entering the reaction chamber 200 and directly irradiating the substrate 230 , thereby affecting the stability and uniformity of the film formed on the substrate 230 .

[0069] Example 4

[0070] like Figure 5 As shown, the difference between this embodiment and the above embodiment is that part of the ammonia gas input pipeline 142 is located above the gas shower head 210, the gas outlet section is located in the gas shower head 210 and directly connected to the area below the gas shower head 210, and the gas inlet section is connected to the ammonia gas source outside the reaction chamber 200; the ammonia gas input pipeline 142 also includes a quartz tube 144, which is arranged above the gas shower head 210. The ammonia gas first passes through the quartz tube 144 and then enters the gas shower head 210. Finally, it enters the interior of the reaction chamber 200; the laser emitted by the laser emitter 141 is transmitted above the gas shower head 210, enters the quartz tube 144, and irradiates the ammonia gas in the quartz tube 144 to promote the cracking reaction of the ammonia molecules. The radicals produced by the cracking diffuse along the ammonia input pipeline 142 to the bottom of the gas shower head 210, and then diffuse to the surface of the substrate 230, and react with other reaction gases on the surface of the substrate 230 to form a semiconductor film on the surface of the substrate 230.

[0071] Furthermore, the quartz tube 144 is positioned as close to the gas shower head 210 as possible, so that the radicals from the cracked ammonia gas can enter the gas shower head 210 and then the reaction chamber 200 as quickly as possible, thereby preventing the cracked ammonia gas radicals from returning to ammonia molecules.

[0072] In other embodiments, multiple groups of ammonia crackers 140 may be disposed above the gas showerhead 210 to increase the number of cracked ammonia molecules and allow more ammonia cracking radicals to enter the reaction chamber 200 .

[0073] It should be pointed out that although Figure 5 The laser emitter 141 is set on the side of the quartz tube 144, but this does not limit the position of the laser emitter 141. The laser emitter 141 can also be set at a position above any gas shower head 210. It is only necessary to allow the laser emitted by the laser emitter 141 to enter the quartz tube 144 and irradiate the ammonia gas.

[0074] In the above-mentioned embodiments 1 to 4, not all ammonia irradiated by the laser undergoes a cracking reaction. The radicals produced by the cracking and the un-cracked ammonia molecules enter the reaction chamber 200 together. The radicals produced by the cracking react directly with other reaction gases on the surface of the substrate 230. The un-cracked ammonia molecules crack at the high temperature provided by the heater under the base 220, and then react with other reaction gases at the high temperature. Although the laser cannot crack all ammonia molecules, the laser promotes the cracking of some ammonia molecules, improves the utilization rate of ammonia, and can also reduce the heating temperature of the heater, thereby reducing energy consumption. For example, in a reaction chamber without using the ammonia cracking device of the present invention, the heater needs to be heated to 1200°C to crack the ammonia. Sufficient radicals and other reaction gases are generated to undergo a deposition reaction on the surface of the substrate 230. When using the ammonia cracking device of the present invention, after promoting the cracking of some ammonia molecules by laser irradiation, it is only necessary to heat the heater to 800°C to 900°C to cause the ammonia, ammonia cracking radicals and other reaction gases to undergo a deposition reaction on the surface of the substrate 230. In addition, the laser in the embodiment of the present invention is above the gas shower head 210, or inside the gas shower head 210, or passes through the gas shower head 210 from top to bottom and thus below the gas shower head 210 to crack the ammonia molecules. There is no need to open holes in the side walls of the reaction chamber 200, which does not affect the distribution of the annular airflow in the reaction chamber 200 and reduces the impact on the uniformity of film formation on the substrate 230.

[0075] The ammonia crackers in the above-mentioned embodiments 1 to 4 are not limited to being used alone, but can also be used in combination. For example, the solutions of embodiment 1 and embodiment 2 can be used in combination, that is, a laser emitter 141 is set above the observation window 150 and above the through hole of the ring cover 160 to form a first laser light path and a second laser light path respectively, and a reflector 143 is set at the place where the laser enters the reaction chamber 200 to adjust the propagation direction of the laser to be horizontal, and an ammonia input pipeline 142 is set in the gas shower head 210 to transmit ammonia to the bottom of the gas shower head 210. Ammonia diffuses below the gas shower head 210 to form a first ammonia diffusion path. The first laser light path and the second laser light path both intersect with the first ammonia diffusion path, so that the laser radiates ammonia from the center to the edge of the gas shower head 210, and also radiates ammonia from the edge to the center of the gas shower head 210; the solutions of embodiment 2 and embodiment 3 can also be used in combination, that is, a laser emitter 141 is set above the through hole of the ring cover 160 A third laser optical path is formed by a reflector 143 at the point where the laser enters the reaction chamber 200 to adjust the propagation direction of the laser to be horizontal. An ammonia gas input line 142 is provided in the gas shower head 210 to transmit ammonia gas to the bottom of the gas shower head 210. The ammonia gas diffuses below the gas shower head 210 to form a second ammonia gas diffusion path. The third laser optical path intersects the second ammonia gas diffusion path, so that the laser irradiates the ammonia gas from the edge of the gas shower head 210 toward the center. At the same time, a laser emitter 141 is provided above the observation window 150 to form a fourth laser optical path. A purge gas channel is used as the outlet section of the ammonia gas input line 142 to transmit ammonia gas to the hollow channel below the observation window 150. Ammonia gas diffuses in the hollow channel to form a third ammonia gas diffusion path. The fourth laser optical path intersects the third ammonia gas diffusion path, so that the laser irradiates the ammonia gas in the hollow channel below the observation window 150. Combining the ammonia crackers of various embodiments, where the structure permits, can improve the efficiency of laser irradiation of ammonia gas.

[0076] The above description is only a preferred embodiment of the present invention. Although the present invention has been disclosed as a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can, without departing from the scope of the technical solution of the present invention, use the methods and technical contents disclosed above to make many possible changes and modifications to the technical solution of the present invention, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiment based on the technical essence of the present invention without departing from the content of the technical solution of the present invention shall still fall within the scope of protection of the technical solution of the present invention.

Claims

1. A vapor deposition apparatus comprising: A reaction chamber, a gas shower head disposed on the upper side of the reaction chamber, and a base disposed opposite to the gas shower head, wherein the upper surface of the base is used to carry a substrate, characterized in that it also includes: An ammonia cracker, comprising a laser emitter and an ammonia input pipeline, wherein the laser emitter is arranged above a gas shower head, and a gas outlet section of the ammonia input pipeline is arranged in the gas shower head; The ammonia gas input pipeline transmits the ammonia gas to the laser light path emitted by the laser transmitter. The laser irradiates the ammonia gas to promote the cracking reaction of the ammonia gas. The radicals generated by the cracking of the ammonia gas diffuse to the surface of the substrate and react with the reaction gas on the substrate surface to deposit.

2. The vapor deposition apparatus according to claim 1, characterized in that The laser light path includes a plurality of single laser beams arranged to form a laser surface to irradiate the ammonia gas.

3. The vapor deposition apparatus according to claim 1, characterized in that The wavelength of the laser emitter is 5 μm to 15 μm.

4. The vapor deposition apparatus according to claim 2, characterized in that: The laser optical path is at least partially located below the gas shower head and above the substrate; ammonia gas flows out from the gas shower head to below the gas shower head after passing through the ammonia gas input pipeline, so as to meet the laser optical path below the gas shower head for cracking.

5. The vapor deposition apparatus according to claim 4, characterized in that The laser light path radiates from the edge of the gas shower head to the center and / or from the center of the gas shower head to the edge. The ammonia input pipeline includes multiple sub-pipelines dispersedly distributed in the gas shower head to transmit ammonia from the outside of the reaction chamber to the bottom of the gas shower head.

6. The vapor deposition apparatus according to claim 5, characterized in that The ammonia cracker further comprises a reflector, and the laser emitted by the laser emitter propagates from top to bottom and is adjusted by the reflector to propagate parallel to the lower surface of the gas shower head.

7. The vapor deposition apparatus according to claim 6, characterized in that The laser emitted by the laser emitter is transmitted along a first channel opened inside the gas shower head and passing through the gas shower head from top to bottom, and reaches the bottom of the gas shower head; the reflector is arranged at the outlet of the first channel below the gas shower head and is connected and fixed to the lower surface of the gas shower head.

8. The vapor deposition apparatus according to claim 7, characterized in that A protective cover is vertically connected between the side wall of the reflector and the lower surface of the gas shower head to prevent the reaction products from being deposited on the surface of the reflector.

9. The vapor deposition apparatus according to claim 7, characterized in that: The observation window of the reaction chamber is the entrance of the first channel. The laser emitted by the laser emitter passes through the observation window, enters the interior of the gas shower head, and is then transmitted to the bottom of the gas shower head.

10. The vapor deposition apparatus according to claim 7, characterized in that The reflector is arranged at 25 mm to 100 mm from the lower surface of the gas shower head, or at 0.1 h to 0.5 h from the lower surface of the gas shower head, wherein h is the distance between the lower surface of the gas shower head and the substrate.

11. The vapor deposition apparatus according to claim 6, characterized in that: The laser emitted by the laser emitter is transmitted along the second channel of the ring cover opened on the outside of the gas shower head and from top to bottom through the ring cover to reach the inside of the reaction chamber; the reflector is arranged at the outlet of the second channel below the ring cover and is connected and fixed to the side wall of the reaction chamber or the ring cover to introduce the laser horizontally into the bottom of the gas shower head.

12. The vapor deposition apparatus according to claim 11, characterized in that An annular glass is arranged between the gas shower head and the lifting ring of the reaction chamber. The laser emitted by the laser emitter is transmitted along the second channel and adjusted by the reflector before passing through the annular glass to reach the bottom of the gas shower head.

13. The vapor deposition apparatus according to claim 11, characterized in that A plurality of single laser beams are arranged to form at least one arc-shaped laser surface.

14. The vapor deposition apparatus according to claim 1, wherein: The laser emitted by the laser emitter is transmitted along a third channel opened inside the gas shower head and enters the interior of the gas shower head; the gas outlet section of the ammonia input pipeline is connected to the third channel, and the ammonia is transmitted from the outside of the reaction chamber to the third channel in the gas shower head, so as to crack the ammonia inside the gas shower head.

15. The vapor deposition apparatus according to claim 14, characterized in that The third channel is a first through hole arranged in the gas shower head, and the first through hole penetrates the gas shower head from top to bottom. The outlet of the first through hole is connected to the interior of the reaction chamber. The radicals generated by the decomposition of the ammonia enter the interior of the reaction chamber through the first through hole and diffuse to the surface of the substrate; the gas outlet section of the ammonia input pipeline is a second through hole connected to the side wall of the first through hole.

16. The vapor deposition apparatus according to claim 14, wherein: A laser processing device for absorbing or reflecting laser light is provided at the outlet of the third channel to prevent the laser light from directly irradiating the substrate.

17. The vapor deposition apparatus according to claim 1, characterized in that Part of the ammonia gas input pipeline is located above the gas shower head; the laser emitted by the laser emitter is transmitted along the fourth channel above the gas shower head and reaches the ammonia gas input pipeline above the gas shower head to crack the ammonia gas above the gas shower head.

18. The vapor deposition apparatus according to claim 17, characterized in that The ammonia gas input pipeline also includes a quartz tube, which is arranged above the gas shower head. The laser emitted by the laser emitter and the ammonia gas transmitted by the ammonia gas input pipeline reach the quartz tube, and an ammonia gas cracking reaction occurs in the quartz tube. The radicals generated by the cracking enter the reaction chamber through the gas outlet section of the ammonia gas input pipeline.

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