Silicon wafer multi-point thickness measuring device
By designing a multi-point thickness measurement device for silicon wafers and employing a triangularly arranged measuring probe and driving device, multi-point measurement of silicon wafers was achieved, solving the problems of low measurement efficiency and insufficient accuracy in existing technologies, and improving measurement efficiency and accuracy.
Patent Information
- Application Number
- CN202421005717.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-10
- Publication Date
- 2025-01-14
- Estimated Expiration
- 2034-05-10
AI Technical Summary
Existing silicon wafer thickness measurement devices typically only perform single-point measurements and cannot simultaneously acquire thickness information from multiple locations on the silicon wafer, resulting in low measurement efficiency and insufficient accuracy.
A multi-point thickness measurement device for silicon wafers was designed. It uses first and second measuring probes arranged in a triangular shape, which move up and down through a driving device. Combined with a silicon wafer positioning block and support rod structure, it can realize multi-point measurement of silicon wafers, and automatically calculate and generate reports through a data processing system.
It improves measurement efficiency and accuracy, reduces the tediousness of manual operation, and enables rapid multi-point measurement and automated data processing of silicon wafers.
Smart Images

Figure CN222353145U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of silicon wafer testing, in particular to a silicon wafer multi-point thickness measuring device. Background Art
[0002] In the field of semiconductor manufacturing, the thickness measurement of silicon wafers is a crucial link. The silicon wafer thickness gauge in the prior art usually adopts a single-point measurement method, which can only test the thickness of a single point of the silicon wafer each time. The operator needs to perform multiple tests to calculate the thickness of the silicon wafer, which affects the efficiency and accuracy of the measurement results. Therefore, it is necessary to design a device that can realize multi-point measurement of silicon wafers to improve the measurement efficiency and accuracy. Utility Model Content
[0003] The utility model provides a silicon wafer multi-point thickness measuring device, which can solve the problems that the existing silicon wafer thickness measuring device can usually only perform single-point measurement and cannot simultaneously obtain thickness information of multiple positions of the silicon wafer, thus having the problems of low measurement efficiency and insufficient accuracy.
[0004] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a multi-point thickness measuring device for silicon wafers, comprising a workbench, support seats are symmetrically arranged on both sides of the upper end of the workbench, the upper ends of the support seats are fixedly connected to a top plate, and a driving device is arranged on the top plate; an upper probe mounting plate, the upper probe mounting plate is connected to the movable end of the driving device, and can be moved up and down and arranged between the two support seats, and three first measuring probes arranged in a triangular shape are vertically penetrated through the middle of the upper probe mounting plate; a lower probe mounting plate, the lower probe mounting plate is horizontally arranged above the workbench and between the two support seats, and second measuring probes corresponding to the first measuring probes are arranged on the lower probe mounting plate, and a plurality of ejector rods for carrying the silicon wafer to be measured are vertically arranged at the front and rear ends of the lower probe mounting plate, and multi-point measurement of the silicon wafer is achieved by the first measuring probes and the second measuring probes arranged in a triangular shape.
[0005] Preferably, silicon wafer positioning blocks are vertically arranged at the four corners of the upper side of the lower probe mounting plate, and the silicon wafer to be tested can be moved left and right to the position of the silicon wafer positioning blocks, and the thickness at 6 different positions can be measured by performing 2 tests.
[0006] Preferably, a plurality of support rods connected to the workbench are vertically arranged along the length direction at the front and rear ends of the bottom of the lower probe mounting plate, which has a simple structure and is easy to install.
[0007] Preferably, the support seat comprises two columns arranged side by side in front and back, and connecting seats are arranged on upper and lower sides of the columns. The columns and the connecting seats are fixedly connected, which is convenient for processing.
[0008] Preferably, a guide rail is vertically arranged on the side wall of the column, and a connecting plate connected to the upper probe mounting plate is arranged on the slider of the guide rail, and the upper probe mounting plate can slide up and down along the guide rail.
[0009] Preferably, a limit block is provided at the middle portion of the column, located at the periphery of the guide rail, to limit the downward movement distance of the upper probe mounting plate.
[0010] Preferably, profile pillars are provided on both sides of the front end between the workbench and the top plate for easy installation.
[0011] Compared with the prior art, the beneficial effects of the utility model are:
[0012] The device has a simple structure and is easy to operate. It can realize multi-point rapid measurement of silicon wafers and improve measurement efficiency and accuracy. It has a high degree of automation, which reduces the tediousness of multiple manual operations. The data processing system can automatically calculate, and the test results can be exported and saved in a report, which is convenient for users to analyze and use. It can solve the problems of low measurement efficiency and insufficient accuracy in existing silicon wafer thickness measurement devices, which can usually only perform single-point measurement and cannot obtain thickness information of multiple positions of silicon wafers at the same time. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 It is a three-dimensional structural diagram of the utility model;
[0014] Figure 2 It is a three-dimensional structural diagram of the test state of the utility model;
[0015] Figure 3 It is a three-dimensional structural diagram of the support seat of the utility model.
[0016] Reference numerals:
[0017] 1. Workbench, 2. Support seat, 21. Column, 22. Connecting seat, 3. Top plate, 4. Driving device, 5. Upper probe mounting plate, 6. First measuring probe, 7. Push rod, 8. Push rod, 9. Push rod, 10. Silicon wafer positioning block, 11. Support rod, 12. Guide rail, 13. Limit block, 14. Profile support, 15. Silicon wafer to be measured, 16. Connecting plate. DETAILED DESCRIPTION
[0018] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.
[0019] like Figure 1-3As shown, the utility model is to solve the problems that the existing silicon wafer thickness measuring device can usually only perform single-point measurement and cannot simultaneously obtain the thickness information of multiple positions of the silicon wafer, so there are problems such as low measurement efficiency and insufficient accuracy. The utility model provides the following technical solutions: a silicon wafer multi-point thickness measuring device, including a workbench 1, support seats 2 are symmetrically arranged on both sides of the upper end of the workbench 1, and the upper end of the support seat 2 is fixedly connected to a top plate 3, and a driving device 4 is arranged on the top plate 3; the driving device 4 can be an electric cylinder, a cylinder or a hydraulic cylinder, etc., which can realize linear reciprocating motion, an upper probe mounting plate 5, and the upper probe mounting plate 5 is connected to the movable end of the driving device 4, and can be moved up and down and is arranged on the two support seats 2 The middle part of the upper probe mounting plate 5 is vertically penetrated with three first measuring probes 6 arranged in a triangle shape, which are used to contact the upper surface of the silicon wafer 15 to be measured; the lower probe mounting plate 7 is horizontally arranged above the workbench 1 and between the two support seats 2; the lower probe mounting plate 7 is provided with second measuring probes 8 corresponding to the first measuring probes 6 one by one; the end of the second measuring probe 8 contacts the lower surface of the silicon wafer 15 to be measured; the front and rear ends of the lower probe mounting plate 7 are vertically provided with a plurality of ejector rods 9 for supporting the silicon wafer 15 to be measured; multi-point measurement of the silicon wafer is achieved by the first measuring probes 6 and the second measuring probes 8 arranged in a triangle shape.
[0020] In this embodiment, if Figure 2 As shown, silicon wafer positioning blocks 10 are vertically arranged at the four corners of the upper side of the lower probe mounting plate 7. The silicon wafer 15 to be tested can be moved left and right to the position of the silicon wafer positioning block 10. Two tests can be performed to measure the thickness at six different positions.
[0021] In this embodiment, if Figure 1 As shown, a plurality of support rods 11 connected to the workbench 1 are vertically arranged at the front and rear ends of the bottom of the lower probe mounting plate 7 along the length direction, which has a simple structure and is easy to install.
[0022] In this embodiment, if Figure 3 As shown, the support seat 2 includes two columns 21 arranged side by side in front and back, and connecting seats 22 are arranged on the upper and lower sides of the columns 21. The columns 21 and the connecting seats 22 are fixedly connected, which is convenient for processing.
[0023] In this embodiment, if Figure 1 As shown, a guide rail 12 is vertically arranged on the side wall of the column 21 , and a connecting plate 16 connected to the upper probe mounting plate 5 is arranged on the slider of the guide rail 12 , and the upper probe mounting plate 5 can slide up and down along the guide rail 12 .
[0024] In this embodiment, if Figure 1As shown, a limit block 13 is provided at the middle portion of the column 21 and the periphery of the guide rail 12 to limit the downward movement distance of the upper probe mounting plate 5 .
[0025] In this embodiment, if Figure 1 As shown, profile pillars 14 are provided on both sides of the front end between the workbench 1 and the top plate 3, which is convenient for installation.
[0026] In this embodiment, if Figure 1 As shown, when in standby mode, the driving device 4 lifts the upper probe mounting plate 5 to the top position to facilitate the placement of the silicon wafer 15 to be tested, and the silicon wafer 15 to be tested is placed on the top rod 9. The silicon wafer 15 to be tested contacts the silicon wafer positioning block 10 on one side, and the start button is pressed. The driving device 4 is deflated, and the upper probe mounting plate 5 slowly descends by its own weight until the connecting plate 16 contacts the limit block 13, and the first measuring probe 6 and the second measuring probe 8 both contact the silicon wafer 15 to be tested. The thickness information of the silicon wafer can be obtained by changing the telescopic distance of the first measuring probe 6 and the second measuring probe 8. After a single three-point measurement is completed, the driving device 4 lifts the upper probe mounting plate 5, and the operator continues to translate the silicon wafer 15 to be tested until it contacts the silicon wafer positioning block 10 on the other side, presses the start button, and then measures the three-point thickness of the silicon wafer. The measurement results can be transmitted to the industrial computer through the communication line, and the measurement results are displayed by the customized display software, and the results are recorded. The recorded results can be output as an excel file for easy traceability.
[0027] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.
[0028] In addition, in the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0029] In the present invention, unless otherwise clearly specified and limited, the terms "connection", "fixation", etc. should be understood in a broad sense. For example, "fixation" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0030] In addition, the technical solutions between the various embodiments of the present invention can be combined with each other, but it must be based on the fact that ordinary technicians in the field can implement it. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.
Claims
1. A multi-point thickness measuring device for silicon wafers, characterized in that: include: A workbench (1), wherein support seats (2) are symmetrically arranged on both sides of the upper end of the workbench (1), a top plate (3) is fixedly connected to the upper end of the support seat (2), and a driving device (4) is arranged on the top plate (3); An upper test lead installation plate (5), the upper test lead installation plate (5) being connected to the movable end of the driving device (4), and being movable up and down and arranged between the two support seats (2), and three first measuring test leads (6) arranged in a triangular shape are vertically penetrated through the middle of the upper test lead installation plate (5); A lower test lead installation plate (7), the lower test lead installation plate (7) being horizontally arranged above the workbench (1) and between the two support seats (2), the lower test lead installation plate (7) being provided with second measuring test leads (8) corresponding one-to-one to the first measuring test leads (6), and a plurality of push rods (9) for supporting the silicon wafer (15) to be measured being vertically arranged at the front and rear ends of the lower test lead installation plate (7).
2. The multi-point thickness measuring device for silicon wafer according to claim 1, characterized in that: Silicon chip positioning blocks (10) are vertically arranged at the four corners of the upper side of the lower probe mounting plate (7).
3. The multi-point thickness measuring device for silicon wafer according to claim 1, characterized in that: A plurality of support rods (11) connected to the workbench (1) are vertically arranged along the length direction at the front and rear ends of the bottom of the lower probe mounting plate (7).
4. The multi-point thickness measuring device for silicon wafer according to claim 1, characterized in that: The support seat (2) comprises two columns (21) arranged side by side in front and back, and connecting seats (22) are provided on the upper and lower sides of the columns (21) opposite to each other, and the columns (21) and the connecting seats (22) are fixedly connected.
5. The multi-point thickness measuring device for silicon wafers according to claim 4, characterized in that: A guide rail (12) is vertically arranged on the side wall of the upright column (21), and a connecting plate (16) connected to the upper probe mounting plate (5) is arranged on the slider of the guide rail (12).
6. The multi-point thickness measuring device for silicon wafer according to claim 5, characterized in that: A limiting block (13) is arranged at the middle of the upright column (21) and on the outer periphery of the guide rail (12).
7. The multi-point thickness measuring device for silicon wafer according to claim 1, characterized in that: Profile pillars (14) are provided on both sides of the front end between the workbench (1) and the top plate (3).