Silicon wafer detection system

Abstract

The utility model provides a silicon wafer detection system. The silicon wafer detection system comprises a silicon wafer conveying line, a size detection device, a first surface detection device, a subfissure detection device, an edge detection device, a second surface detection device and a thickness detection device. The silicon wafer conveying line is configured to synchronously convey a first silicon wafer and a second silicon wafer along a first direction. The first silicon wafer and the second silicon wafer are driven by the silicon wafer conveying line to pass through the size detection station, the first surface detection station, the hidden crack detection station, the edge detection station, the second surface detection station and the thickness detection station in sequence. The detection devices arranged at the stations sequentially and continuously complete the detection of the size, the first surface, the subfissure, the edge, the second surface and the thickness of the silicon wafer, and the silicon wafer does not need to be carried and turned over in the detection process, so that the detection effect is improved. The silicon wafer conveying line synchronously conveys the two silicon wafers, and the detection devices synchronously detect the two silicon wafers at the corresponding stations, so that the detection efficiency is further improved.

Description

Technical Field

[0001] The present application relates to the field of photovoltaic cell production, and specifically to a silicon wafer detection system. Background Art

[0002] In the production process of solar cells, the silicon rods need to be cut into silicon wafers first, and then the silicon wafers need to be cleaned. After cleaning, the silicon wafers need to be tested. Silicon wafer testing includes silicon wafer size testing, silicon wafer hidden crack testing, silicon wafer surface and edge contamination testing, silicon wafer thickness testing and other testing items.

[0003] At present, it is generally necessary to use multiple sets of testing equipment to complete the above-mentioned items of silicon wafers. During the testing process, silicon wafers need to be transferred between various testing equipment, which reduces the testing efficiency. In addition, the existing silicon wafer testing equipment has a silicon wafer conveyor line that only conveys one silicon wafer. Correspondingly, the silicon wafer testing equipment only tests one silicon wafer conveyed to the testing station each time, which further reduces the testing efficiency. Utility Model Content

[0004] In order to solve the above technical problems, the present application provides a silicon wafer detection system, which adopts the following technical solutions:

[0005] A silicon wafer detection system includes a silicon wafer conveyor line, a size detection device, a first surface detection device, a hidden crack detection device, an edge detection device, a second surface detection device and a thickness detection device, wherein:

[0006] The silicon wafer conveying line is configured to convey a first silicon wafer and a second silicon wafer synchronously along a first direction, wherein the first silicon wafer and the second silicon wafer are placed side by side along a second direction, and the second direction is perpendicular to the first direction;

[0007] The conveying path of the silicon wafer conveyor line is provided with a size detection station, a first surface detection station, a hidden crack detection station, an edge detection station, a second surface detection station and a thickness detection station;

[0008] The size detection device is disposed at the size detection station and is configured to perform size detection on the first silicon wafer and the second silicon wafer located at the size detection station;

[0009] The first surface inspection device is disposed at the first surface inspection station and is configured to inspect the first surfaces of the first silicon wafer and the second silicon wafer located at the first surface inspection station;

[0010] The hidden crack detection device is disposed at the hidden crack detection station and is configured to perform hidden crack detection on the first silicon wafer and the second silicon wafer located at the hidden crack detection station;

[0011] The second surface detection device is disposed at the second surface detection station and is configured to detect the second surface of the first silicon wafer and the second silicon wafer located at the second surface detection station, where the second surface is a surface opposite to the first surface;

[0012] The edge detection device is disposed at the edge detection station and is configured to detect edges of the first silicon wafer and the second silicon wafer located at the edge detection station;

[0013] The thickness detection device is disposed at the thickness detection station and is configured to perform thickness detection on the first silicon wafer and the second silicon wafer located at the thickness detection station.

[0014] The silicon wafer inspection system provided by the present application is that the silicon wafer passes through the size inspection station, the first surface inspection station, the hidden crack inspection station, the edge inspection station, the second surface inspection station and the thickness inspection station in sequence under the drive of the silicon wafer conveyor line. The inspection devices arranged at the above-mentioned stations successively and continuously complete various inspections of the silicon wafer. During the inspection process, there is no need to carry and circulate the silicon wafer, thereby improving the inspection effect. In addition, the silicon wafer conveyor line implements the synchronous transportation of two silicon wafers, and each inspection device can synchronously inspect the two silicon wafers located at the corresponding station, thereby further improving the inspection efficiency.

[0015] In some embodiments, the silicon wafer conveying line includes two sets of conveyor belts arranged in parallel, and the two sets of conveyor belts are used to convey the first silicon wafer and the second silicon wafer respectively.

[0016] By configuring the silicon wafer conveyor line to be two sets of parallel conveyor belts, the silicon wafer conveyor line can realize synchronous conveyance of the first silicon wafer and the second silicon wafer. In addition, the sides of the first silicon wafer and the second silicon wafer close to each other can extend into the gap between the two sets of conveyor belts, thereby providing sufficient detection space for the sides of the first silicon wafer and the second silicon wafer close to each other.

[0017] In some embodiments, the size detection device includes a size detection light source and a first size detection camera and a second size detection camera, wherein the size detection light source is located below the silicon wafer conveyor line, and the first size detection camera and the second size detection camera are located above the silicon wafer conveyor line; the size detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the size detection station, and the first size detection camera and the second size detection camera are configured to perform size detection on the first silicon wafer and the second silicon wafer, respectively.

[0018] The first size detection camera and the second size detection camera independently detect the size of the first silicon wafer and the second silicon wafer, which can reduce interference and ensure the accuracy of size detection. During the detection process, the first silicon wafer and the second silicon wafer are illuminated by the size detection light source, so that the first size detection camera and the second size detection camera can obtain clearer silicon wafer images, thereby further improving the detection accuracy.

[0019] In some embodiments, the first surface is the upper surface and the second surface is the lower surface; the first surface detection device includes a first surface detection light source and a first surface detection camera and a second surface detection camera, wherein: the first surface detection light source is located above the silicon wafer conveyor line, the first surface detection light source is provided with a first slit extending along the second direction, the first surface detection camera and the second surface detection camera are located above the first surface detection light source; the first surface detection light source is configured to irradiate the upper surfaces of the first silicon wafer and the second silicon wafer located at the first surface detection station, the first surface detection camera is configured to perform surface detection on the upper surface of the first silicon wafer through the first slit, and the second surface detection camera is configured to irradiate the first slit on the second silicon wafer. The upper surface of the silicon wafer is subjected to surface inspection; the second surface inspection device includes a second surface inspection light source and a third surface inspection camera and a fourth surface inspection camera, wherein: the second surface inspection light source is located below the silicon wafer conveyor line, the second surface inspection light source is provided with a second slit extending along the second direction, the third surface inspection camera and the fourth surface inspection camera are located below the second surface inspection light source; the second surface inspection light source is configured to irradiate the lower surfaces of the first silicon wafer and the second silicon wafer located at the second surface inspection station, the third surface inspection camera is configured to perform surface inspection on the lower surface of the first silicon wafer through the second slit, and the fourth surface inspection camera is configured to perform surface inspection on the lower surface of the second silicon wafer through the second slit.

[0020] The first surface detection camera and the second surface detection camera independently detect the upper surface of the first silicon wafer and the upper surface of the second silicon wafer to ensure the detection accuracy of the upper surface. During the detection process, the first surface detection light source illuminates the upper surface of the first silicon wafer and the second silicon wafer, so that the first surface detection camera and the second surface detection camera can obtain clearer images of the upper surface of the silicon wafer, thereby further improving the detection accuracy. Similarly, the third surface detection camera and the fourth surface detection camera independently detect the upper surface of the first silicon wafer and the lower surface of the second silicon wafer to ensure the detection accuracy of the lower surface. During the detection process, the second surface detection light source illuminates the lower surface of the first silicon wafer and the second silicon wafer, so that the third surface detection camera and the fourth surface detection camera can obtain clearer images of the lower surface of the silicon wafer, thereby further improving the detection accuracy.

[0021] In some embodiments, the hidden crack detection device includes a hidden crack detection light source and a first hidden crack detection camera and a second hidden crack detection camera, wherein: the hidden crack detection light source is located above the silicon wafer conveyor line, and the first hidden crack detection camera and the second hidden crack detection camera are located above the hidden crack detection camera; the hidden crack detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the hidden crack detection station, the first hidden crack detection camera is configured to perform hidden crack detection on the first silicon wafer, and the second hidden crack detection camera is configured to perform hidden crack detection on the second silicon wafer.

[0022] The first and second crack detection cameras independently detect cracks on the first and second silicon wafers to ensure crack detection accuracy. During the detection process, the first and second silicon wafers are illuminated by the crack detection light source, so that the first and second crack detection cameras can obtain clearer images of the upper surface of the silicon wafers, thereby further improving the detection accuracy.

[0023] In some embodiments, the edge detection station includes a front edge detection station, a first side edge detection station, a second side edge detection station and a rear edge detection station which are sequentially arranged along the conveying path of the silicon wafer conveyor line; the edge detection device includes a front edge detection unit, a first side edge detection unit, a second side edge detection unit and a rear edge detection unit, wherein: the front edge detection unit is arranged at the front edge detection station, and is configured to detect the front edge, the first front chamfer and the second front chamfer of the first silicon wafer and the second silicon wafer located at the front edge detection station, wherein the first front chamfer is a chamfer located at the front end of the silicon wafer facing the first side of the silicon wafer conveyor line, and the second front chamfer is a chamfer located at the front end of the silicon wafer facing the second side of the silicon wafer conveyor line chamfers on both sides; a first side edge detection unit is arranged at the first side edge detection station, and is configured to detect both side edges of the first silicon wafer located at the first side edge detection station; a second side edge detection unit is arranged at the second side edge detection station, and is configured to detect both side edges of the second silicon wafer located at the second side edge detection station; a rear end edge detection unit is arranged at the rear end edge detection station, and is configured to detect the rear end edges of the first silicon wafer and the second silicon wafer located at the rear end edge detection station, a first rear end chamfer and a second rear end chamfer, wherein the first rear end chamfer is a chamfer located at the rear end of the silicon wafer facing the first side of the silicon wafer conveying line, and the second rear end chamfer is a chamfer located at the rear end of the silicon wafer facing the second side of the silicon wafer conveying line.

[0024] By setting the edge detection station to include the front edge detection station, the first side edge detection station, the second side edge detection station and the rear edge detection station sequentially arranged along the conveying path of the silicon wafer conveying line. Correspondingly, by setting the edge detection device to include the front edge detection part, the first side edge detection part, the second side edge detection part and the rear edge detection part which are arranged at the above-mentioned stations in a one-to-one correspondence. The edge detection device can sequentially complete the detection of the front edge, the side edge and the rear edge of the first silicon wafer and the second silicon wafer.

[0025] In some embodiments, the front end edge detection unit includes a front end edge detection light source, a first front end chamfer detection light source, a second front end chamfer detection light source, a first front end edge detection camera, a second front end edge detection camera and a front end reflector, wherein: the first front end chamfer detection light source is located on the first side of the silicon wafer conveyor line, the second front end chamfer detection light source is located on the second side of the silicon wafer conveyor line, the front end edge detection light source is located above the silicon wafer conveyor line, the first front end edge detection camera and the second front end edge detection camera are located above the silicon wafer conveyor line, and the first front end edge detection camera is close to the first side of the silicon wafer conveyor line, and the second front end edge detection camera is close to the second side of the silicon wafer conveyor line; the first front end chamfer detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the front end edge detection station. The first front end chamfer of the two silicon wafers, the second front end chamfer detection light source is configured to illuminate the second front end chamfer of the first silicon wafer and the second silicon wafer located at the front end edge detection station, and the front end edge detection light source is configured to illuminate the front end edges of the first silicon wafer and the second silicon wafer located at the front end edge detection station; the first silicon wafer reflects the received light to the first front end edge detection camera through the front end reflector, so as to use the first front end edge detection camera to detect the first front end chamfer, the second front end chamfer and the front end edge of the first silicon wafer; the second silicon wafer reflects the received light to the second front end edge detection camera through the front end reflector, so as to use the second front end edge detection camera to detect the first front end chamfer, the second front end chamfer and the front end edge of the second silicon wafer.

[0026] By setting a front end edge detection light source, a first front end chamfer detection light source, a second front end chamfer detection light source, a first front end edge detection camera, a second front end edge detection camera and a front end reflector, and laying out the positions of each component, the first front end edge detection camera can receive the first front end chamfer, the second front end chamfer and the light reflected by the front end edge of the first silicon wafer, thereby completing the detection of the front end edge and the two front end chamfers of the first silicon wafer, and the second front end edge detection camera can receive the first front end chamfer, the second front end chamfer and the light reflected by the front end edge of the second silicon wafer, thereby completing the detection of the front end edge and the two front end chamfers of the second silicon wafer.

[0027] In some embodiments, the first front chamfer detection light source includes a first front point light source and a second front point light source, wherein the first front point light source is used to illuminate the first front chamfer of the first silicon wafer, and the second front point light source is used to illuminate the first front chamfer of the second silicon wafer; the second front chamfer detection light source includes a third front point light source and a fourth front point light source, wherein the third front point light source is used to illuminate the second front chamfer of the first silicon wafer, and the fourth front point light source is used to illuminate the second front chamfer of the second silicon wafer.

[0028] By setting the first front chamfer detection light source to include a first front point light source and a second front point light source with different emission angles, the first front chamfer detection light source can accurately illuminate the first front chamfer of the first silicon wafer and the first front chamfer of the second silicon wafer, and finally improve the detection accuracy of the first front edge detection camera and the second front edge detection camera on the first front chamfer of the first silicon wafer and the first front chamfer of the second silicon wafer. Similarly, by setting the second front chamfer detection light source to include a third front point light source and a fourth front point light source with different emission angles, the second front chamfer detection light source can accurately illuminate the second front chamfer of the first silicon wafer and the second front chamfer of the second silicon wafer, and finally improve the detection accuracy of the first front edge detection camera and the second front edge detection camera on the second front chamfer of the first silicon wafer and the second front chamfer of the second silicon wafer.

[0029] In some embodiments, the first side edge detection unit includes a first side edge detection light source, a second side edge detection light source, a first reflector, a second reflector, a first side edge detection camera, and a second side edge detection camera, wherein: the first side edge detection light source, the first reflector, and the first side edge detection camera are all located on the first side of the first silicon wafer at the first side edge detection station, and the first side edge detection camera is located above the silicon wafer conveyor line, wherein: the first side edge detection light source is used to irradiate the first side edge of the first silicon wafer located at the first side edge detection station, and the first reflector is used to reflect the light reflected from the first side edge of the first silicon wafer upward to the first The side edge detection camera is located in the side edge detection camera, so that the first side edge detection camera detects the first side edge of the first silicon wafer; the second side edge detection light source, the second reflector and the second side edge detection camera are all located on the second side of the first silicon wafer at the first side edge detection station, and the second side edge detection camera is located above the silicon wafer conveyor line, wherein: the second side edge detection light source is used to illuminate the second side edge of the first silicon wafer located at the first side edge detection station, and the second reflector is used to reflect the light reflected from the second side edge of the first silicon wafer upward into the second side edge detection camera, so that the second side edge detection camera detects the second side edge of the first silicon wafer.

[0030] By setting the first side edge detection unit, the first side edge detection unit can implement synchronous detection of both side edges of the first silicon wafer located at the first side edge detection station. In particular, by setting the first reflector and the second reflector, the light irradiated by the first side edge detection light source and the second side edge detection light source to the both side edges of the first silicon wafer is reflected upward to the first side edge detection camera and the second side edge detection camera respectively arranged above the silicon wafer conveyor line.

[0031] In some embodiments, the second side edge detection unit includes a third side edge detection light source, a fourth side edge detection light source, a third reflector, a fourth reflector, a third side edge detection camera, and a fourth side edge detection camera, wherein: the third side edge detection light source, the third reflector, and the third side edge detection camera are all located on the first side of the second silicon wafer at the second side edge detection station, and the third side edge detection camera is located above the silicon wafer conveyor line, wherein the third side edge detection light source is used to irradiate the first side edge of the second silicon wafer located at the second side edge detection station, and the third reflector is used to reflect the light reflected from the first side edge of the second silicon wafer upward to the third side edge detection station. In the three side edge detection cameras, the third side edge detection camera detects the first side edge of the second silicon wafer; the fourth side edge detection light source, the fourth reflector and the fourth side edge detection camera are all located on the second side of the second silicon wafer at the second side edge detection station, and the fourth side edge detection camera is located above the silicon wafer conveyor line, wherein the fourth side edge detection light source is used to illuminate the second side edge of the second silicon wafer located at the second side edge detection station, and the fourth reflector is used to reflect the light reflected from the second side edge of the second silicon wafer upward into the fourth side edge detection camera, so that the fourth side edge detection camera detects the second side edge of the second silicon wafer.

[0032] By setting the second side edge detection unit, the second side edge detection unit can implement synchronous detection of the two side edges of the second silicon wafer located at the second side edge detection station. In particular, by setting the third reflector and the fourth reflector, the light irradiated by the third side edge detection light source and the fourth side edge detection light source to the two side edges of the second silicon wafer is reflected upward to the third side edge detection camera and the fourth side edge detection camera respectively arranged above the silicon wafer conveyor line.

[0033] In some embodiments, the rear-end edge detection unit includes a rear-end edge detection light source, a first rear-end chamfer detection light source, a second rear-end chamfer detection light source, a first rear-end edge detection camera, a second rear-end edge detection camera and a rear-end reflector, wherein: the first rear-end chamfer detection light source is located on the first side of the silicon wafer conveyor line, the second rear-end chamfer detection light source is located on the second side of the silicon wafer conveyor line, the rear-end edge detection light source is located above the silicon wafer conveyor line, the first rear-end edge detection camera and the second rear-end edge detection camera are located above the silicon wafer conveyor line, and the first rear-end edge detection camera is close to the first side of the silicon wafer conveyor line, and the second rear-end edge detection camera is close to the second side of the silicon wafer conveyor line; the first rear-end chamfer detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the rear-end edge detection station. The first rear end chamfer of the two silicon wafers, the second rear end chamfer detection light source is configured to illuminate the second rear end chamfer of the first silicon wafer and the second silicon wafer located at the rear end edge detection station, and the rear end edge detection light source is configured to illuminate the rear end edges of the first silicon wafer and the second silicon wafer located at the rear end edge detection station; the first silicon wafer reflects the received light through the rear end reflector to the first rear end edge detection camera, so as to use the first rear end edge detection camera to detect the first rear end chamfer, the second rear end chamfer and the rear end edge of the first silicon wafer; the second silicon wafer reflects the received light through the rear end reflector to the second rear end edge detection camera, so as to use the second rear end edge detection camera to detect the first rear end chamfer, the second rear end chamfer and the rear end edge of the second silicon wafer.

[0034] By setting a rear edge detection light source, a first rear chamfer detection light source, a second rear chamfer detection light source, a first rear edge detection camera, a second rear edge detection camera and a rear reflector, and laying out the positions of each component, the first rear edge detection camera can receive the first rear chamfer, the second rear chamfer and the light reflected by the rear edge of the first silicon wafer, thereby completing the detection of the rear edge and the two rear chamfers of the first silicon wafer, and the second rear edge detection camera can receive the first rear chamfer, the second rear chamfer and the light reflected by the rear edge of the second silicon wafer, thereby completing the detection of the rear edge and the two rear chamfers of the second silicon wafer.

[0035] In some embodiments, the first back-end chamfer detection light source includes a first back-end point light source and a second back-end point light source, the first back-end point light source is configured to illuminate the first back-end chamfer of the first silicon wafer, and the second back-end point light source is configured to illuminate the first back-end chamfer of the second silicon wafer; the second back-end chamfer detection light source includes a third back-end point light source and a fourth back-end point light source, the third back-end point light source is configured to illuminate the second back-end chamfer of the first silicon wafer, and the fourth back-end point light source is configured to illuminate the second back-end chamfer of the second silicon wafer.

[0036] By setting the first rear chamfer detection light source to include a first rear end point light source and a second rear end point light source with different emission angles, the first rear chamfer detection light source can accurately illuminate the first rear chamfer of the first silicon wafer and the first rear chamfer of the second silicon wafer, and finally improve the detection accuracy of the first rear edge detection camera and the second rear edge detection camera on the first rear chamfer of the first silicon wafer and the first rear chamfer of the second silicon wafer. Similarly, by setting the second rear chamfer detection light source to include a third rear end point light source and a fourth rear end point light source with different emission angles, the second rear chamfer detection light source can accurately illuminate the second rear chamfer of the first silicon wafer and the second rear chamfer of the second silicon wafer, and finally improve the detection accuracy of the first rear edge detection camera and the second rear edge detection camera on the second rear chamfer of the first silicon wafer and the second rear chamfer of the second silicon wafer.

[0037] In some embodiments, the thickness detection device includes a first mounting bracket, a second mounting bracket, a first thickness detection component, a second thickness detection component, a third thickness detection component, a fourth thickness detection component, a fifth thickness detection component and a sixth thickness detection component, wherein: the first mounting bracket and the second mounting bracket are arranged along the conveying path of the silicon wafer conveyor line, the first mounting bracket is provided with a first detection channel for the silicon wafer conveyor line to pass through, and the second mounting bracket is provided with a second detection channel for the silicon wafer conveyor line to pass through; the first thickness detection component and the second thickness detection component are arranged on the first side wall of the first mounting bracket away from the second mounting bracket, and the third thickness detection component and the fourth thickness detection component are arranged on the first mounting bracket close to the second mounting bracket on the second side wall of the bracket; when the first silicon wafer and the second silicon wafer pass through the first detection channel, the first thickness detection component is used to detect the thickness of the first side portion of the first silicon wafer, the second thickness detection component is used to detect the thickness of the first side portion of the second silicon wafer, the third thickness detection component is used to detect the thickness of the second side portion of the first silicon wafer, and the fourth thickness detection component is used to detect the thickness of the second side portion of the second silicon wafer; the fifth thickness detection component and the sixth thickness detection component are arranged on the second side wall of the second mounting bracket away from the first mounting bracket; when the first silicon wafer and the second silicon wafer pass through the second detection channel, the fifth thickness detection component is used to detect the thickness of the middle portion of the first silicon wafer, and the sixth thickness detection component is used to detect the thickness of the middle portion of the second silicon wafer.

[0038] By setting the thickness detection device, the thickness detection device can simultaneously implement thickness detection of the first silicon wafer and the second silicon wafer, thereby improving the efficiency of silicon wafer thickness detection. In particular, for the first silicon wafer, the first thickness detection component, the third thickness detection component and the fifth thickness detection component successively realize the thickness detection of three parts, namely the first side part, the second side part and the middle part, so that the thickness and uniformity of the first silicon wafer can be accurately evaluated. Similarly, for the second silicon wafer, the second thickness detection component, the fifth thickness detection component and the sixth thickness detection component successively realize the thickness detection of three parts, namely the first side part, the second side part and the middle part, so that the thickness and uniformity of the second silicon wafer can be accurately evaluated.

[0039] In some embodiments, the first thickness detection component, the second thickness detection component, the third thickness detection component, the fourth thickness detection component, the fifth thickness detection component and the sixth thickness detection component have the same structure, and the first thickness detection component includes: a first laser sensor arranged on the upper side of the first detection channel and a second laser sensor arranged on the lower side of the first detection channel; when the first silicon wafer and the second silicon wafer pass through the first detection channel, the first laser sensor and the second laser sensor synchronously scan the two relative surfaces of the first side portion of the first silicon wafer to implement thickness detection on the first side portion of the first silicon wafer.

[0040] Each thickness detection component is configured to include two laser sensors arranged in pairs. By synchronously scanning two relative surfaces of the silicon wafer with the two laser sensors, the thickness detection of the corresponding parts of the silicon wafer can be quickly completed, thereby improving the efficiency of the thickness detection of the silicon wafer.

[0041] In some embodiments, the thickness detection device also includes a first resistivity detection component, a second resistivity detection component, a first P / N type detection component and a second P / N type detection component; the first resistivity detection component, the second resistivity detection component, the first P / N type detection component and the second P / N type detection component are all arranged on the first side wall of the second mounting bracket close to the first mounting bracket; when the first silicon wafer and the second silicon wafer pass through the second detection channel, the first resistivity detection component is used to detect the resistivity of the first silicon wafer, and the second resistivity detection component is used to detect the resistivity of the second silicon wafer; the first P / N type detection component is used to detect the P / N type of the first silicon wafer, and the second P / N type detection component is used to detect the P / N type of the second silicon wafer.

[0042] By setting a first resistivity detection component, a second resistivity detection component, a first P / N type detection component and a second P / N type detection component, the resistance value and P / N type detection of the first silicon wafer and the second silicon wafer are achieved.

[0043] In some embodiments, a reject station, a first regularization station and a second regularization station are further provided on the conveying path of the silicon wafer conveyor line, wherein: the reject station and the first regularization station are sequentially arranged between the hidden crack detection station and the edge detection station along the conveying path of the silicon wafer conveyor line, and the second regularization station is arranged between the edge detection station and the second surface detection station; the silicon wafer detection system also includes a reject device, a first regularization device and a second regularization device, wherein: the reject device is arranged at the reject station, and is configured to reject the first silicon wafer or the second silicon wafer that fails at least one of the size detection, the first surface detection and the hidden crack detection from the silicon wafer conveyor line; the first regularization device is arranged at the first regularization station, and is configured to perform position correction on the first silicon wafer and the second silicon wafer located at the first regularization station; the second regularization device is arranged at the second regularization station, and is configured to perform position correction on the first silicon wafer and the second silicon wafer located at the second regularization station.

[0044] By setting up a rejection device, the silicon wafers that fail the size detection, the first surface detection and the hidden crack detection are rejected. In this way, it can be prevented that the silicon wafers that have been determined to be unqualified after the first three tests continue to flow to the various inspection stations in the back-end, wasting inspection resources. By setting up a first regularization device, the position of the first silicon wafer and the second silicon wafer located at the first regularization station is corrected, thereby ensuring the edge detection effect of the edge detection device in the back-end on the first silicon wafer and the second silicon wafer. By setting up a second regularization device, the position of the first silicon wafer and the second silicon wafer located at the second regularization station is corrected, thereby ensuring the surface detection effect of the second surface detection device in the back-end on the first silicon wafer and the second silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 Schematic diagram of the structure of the silicon wafer detection system in the embodiment of the present application;

[0046] Figure 2 Schematic diagram of the structure of the hidden crack detection device in the embodiment of the present application;

[0047] Figure 3 A schematic diagram of a slit of an edge detection device in an embodiment of the present application;

[0048] Figure 4 Schematic diagram of the structure of the front edge detection unit and the rear edge detection unit in the embodiment of the present application;

[0049] Figure 5 It is a schematic diagram of the structure of the first side edge detection unit and the second side edge detection unit in an embodiment of the present application at a viewing angle;

[0050] Figure 6 is a schematic structural diagram of the first side edge detection unit and the second side edge detection unit in the embodiment of the present application at another viewing angle;

[0051] Figure 7 A schematic diagram of a slit of a first side edge detection unit in an embodiment of the present application;

[0052] Figure 8 A schematic diagram of a slit of a second side edge detection unit in an embodiment of the present application;

[0053] Fig. 9 is a schematic structural diagram of a second surface detection device in an embodiment of the present application;

[0054] Fig.10 It is a schematic diagram of the structure of the thickness detection device in an embodiment of the present application at a viewing angle;

[0055] Fig.11 is a schematic structural diagram of the thickness detection device in an embodiment of the present application from another viewing angle;

[0056] Fig.12 This is a schematic diagram of the top view of the thickness detection device in the embodiment of the present application after some components are omitted;

[0057] Fig.13 It is a structural schematic diagram of components such as a first resistivity detection component and a second resistivity detection component in an embodiment of the present application;

[0058] Fig.14 It is a schematic diagram of the structure of the rejection device in the embodiment of the present application;

[0059] Fig.15 It is a schematic diagram of the structure of the first regularization device in an embodiment of the present application.

[0060] Figures 1 to 15 Included:

[0061] Silicon wafer conveyor line 1: a first group of conveyor belts 11 and a second group of conveyor belts 12;

[0062] Size detection device 2: size detection light source 21, first size detection camera 22, second size detection camera 23;

[0063] First surface detection device 3: first surface detection light source 31, first surface detection camera 32, second surface detection camera 33, first slit 34;

[0064] Hidden crack detection device 4: hidden crack detection light source 41, first hidden crack detection camera 42, second hidden crack detection camera 43;

[0065] Edge detection device 5: front edge detection unit 51, first side edge detection unit 52, second side edge detection unit 53, rear edge detection unit 54, front edge detection light source 511, first front chamfer detection light source 512, second front chamfer detection light source 513, first front edge detection camera 514, second front edge detection camera 515, front reflector 516, first side edge detection light source 521, second side edge detection light source 522, first reflector 523, second reflector 524, first side edge detection camera 525, second side edge detection camera 526, third side edge detection light source 531, fourth side edge detection light source 532 32. a third reflector 533, a fourth reflector 534, a third side edge detection camera 535, a fourth side edge detection camera 536, a rear edge detection light source 541, a first rear chamfer detection light source 542, a second rear chamfer detection light source 543, a first rear edge detection camera 544, a second rear edge detection camera 545, a rear reflector 546, a first front point light source 5121, a second front point light source 5122, a third front point light source 5131, a fourth front point light source 5132, a first rear end point light source 5421, a second rear end point light source 5422, a third rear end point light source 5431, and a fourth rear end point light source 5432;

[0066] Second surface detection device 6: second surface detection light source 61, third surface detection camera 62, fourth surface detection camera 63, second slit 64;

[0067] Thickness detection device 7: first mounting bracket 71, second mounting bracket 72, first thickness detection assembly 73, second thickness detection assembly 74, third thickness detection assembly 75, fourth thickness detection assembly 76, fifth thickness detection assembly 77, sixth thickness detection assembly 78, first resistivity detection assembly 79, second resistivity detection assembly 710, first P / N type detection assembly 711, second P / N type detection assembly 712;

[0068] Rejection device 8;

[0069] First tidying device 9: first tidying mechanism 91, second tidying mechanism 92;

[0070] The second tidying device 10 . DETAILED DESCRIPTION

[0071] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0072] like Figure 1As shown, the silicon wafer detection system in the embodiment of the present application includes a silicon wafer conveyor line 1, a size detection device 2, a first surface detection device 3, a hidden crack detection device 4, an edge detection device 5, a second surface detection device 6 and a thickness detection device 7, wherein:

[0073] The silicon wafer conveyor line 1 is configured to synchronously convey the first silicon wafer and the second silicon wafer along a first direction (such as the X-axis direction in the figure), wherein the first silicon wafer and the second silicon wafer are placed side by side along a second direction (such as the Y-axis direction in the figure), and the second direction is perpendicular to the first direction.

[0074] The conveying path of the silicon wafer conveyor line 1 is provided with a size detection station, a first surface detection station, a hidden crack detection station, an edge detection station, a second surface detection station and a thickness detection station.

[0075] The size detection device 2 is disposed at the size detection station and is configured to perform size detection on the first silicon wafer and the second silicon wafer located at the size detection station to determine whether the sizes of the first silicon wafer and the second silicon wafer meet the requirements.

[0076] The first surface detection device 3 is disposed at the first surface detection station, and is configured to detect the first surfaces of the first silicon wafer and the second silicon wafer located at the first surface detection station to determine whether the first surfaces of the first silicon wafer and the second silicon wafer are contaminated.

[0077] The hidden crack detection device 4 is disposed at the hidden crack detection station and is configured to perform hidden crack detection on the first silicon wafer and the second silicon wafer located at the hidden crack detection station to determine whether there are hidden cracks on the first silicon wafer and the second silicon wafer.

[0078] The edge detection device 5 is disposed at the edge detection station and is configured to detect the edges of the first silicon wafer and the second silicon wafer located at the edge detection station to determine whether there is contamination on the edges of the first silicon wafer and the second silicon wafer.

[0079] The second surface detection device 6 is arranged at the second surface detection station, and is configured to detect the second surfaces of the first silicon wafer and the second silicon wafer located at the second surface detection station, where the second surface is the surface opposite to the first surface, to determine whether there is contamination on the second surfaces of the first silicon wafer and the second silicon wafer.

[0080] The thickness detection device 7 is disposed at the thickness detection station and is configured to perform thickness detection on the first silicon wafer and the second silicon wafer located at the thickness detection station to determine whether the thicknesses of the first silicon wafer and the second silicon wafer meet the requirements.

[0081] In the silicon wafer inspection system of the embodiment of the present application, the silicon wafer passes through the size inspection station, the first surface inspection station, the hidden crack inspection station, the edge inspection station, the second surface inspection station and the thickness inspection station in sequence under the drive of the silicon wafer conveyor line. The inspection devices arranged at the above-mentioned stations successively and continuously complete various inspections of the silicon wafer. During the inspection process, there is no need to carry and circulate the silicon wafer, thereby improving the inspection effect. In addition, the silicon wafer conveyor line 1 implements the synchronous transportation of two silicon wafers, and each inspection device can synchronously inspect the two silicon wafers located at the corresponding station, thereby further improving the inspection efficiency.

[0082] Optionally, the silicon wafer conveyor line 1 includes two groups of conveyor belts arranged in parallel, wherein the first group of conveyor belts 11 is used to convey the first silicon wafer, and the second group of conveyor belts 12 is used to convey the second silicon wafer.

[0083] By configuring the wafer conveyor line 1 to be two sets of parallel conveyor belts, the wafer conveyor line 1 can realize synchronous conveyance of the first wafer and the second wafer. In addition, the sides of the first wafer and the second wafer close to each other can extend into the gap between the two sets of conveyor belts, that is, the sides of the first wafer and the second wafer close to each other are fully exposed to the wafer conveyor line 1, thereby providing sufficient detection space for the sides of the first wafer and the second wafer close to each other.

[0084] like Figure 1 As shown, optionally, the size detection device 2 includes a size detection light source 21, a first size detection camera 22, and a second size detection camera 23, wherein the size detection light source 21 is located below the silicon wafer conveyor line 1, and the first size detection camera 22 and the second size detection camera 23 are located above the silicon wafer conveyor line 1. The size detection light source 21 is configured to illuminate the first silicon wafer and the second silicon wafer located at the size detection station, and the first size detection camera 22 and the second size detection camera 23 are configured to perform size detection on the first silicon wafer and the second silicon wafer, respectively.

[0085] The first size detection camera 22 and the second size detection camera 23 independently detect the size of the first silicon wafer and the second silicon wafer, which can reduce interference and ensure the size detection accuracy of the first silicon wafer and the second silicon wafer. During the detection process, the first silicon wafer and the second silicon wafer are illuminated by the size detection light source 21, so that the first size detection camera 22 and the second size detection camera 23 can obtain clearer silicon wafer images, thereby further improving the size detection accuracy of the first silicon wafer and the second silicon wafer.

[0086] Optionally, the first surface detection device 3 is used to detect the upper surface of the first silicon wafer and the second silicon wafer, that is, the first surface is the upper surface. The second surface detection device 6 is used to detect the lower surface of the first silicon wafer and the second silicon wafer, that is, the second surface is the lower surface.

[0087] like Figure 1 As shown, the first surface detection device 3 includes a first surface detection light source 31, a first surface detection camera 32 and a second surface detection camera 33, wherein: the first surface detection light source 31 is located above the silicon wafer conveyor line 1, and the first surface detection light source 31 is provided with a first slit 34 extending along the second direction, and the first surface detection camera 32 and the second surface detection camera 33 are located above the first surface detection light source 31. The first surface detection light source 31 is configured to illuminate the upper surfaces of the first silicon wafer and the second silicon wafer located at the first surface detection station. The light emitted by the first surface detection light source 31 is irradiated to the upper surfaces of the first silicon wafer and the second silicon wafer. The upper surface of the first silicon wafer reflects the received light and enters the first surface detection camera 32 through the first slit 34. The upper surface of the second silicon wafer reflects the received light and enters the second surface detection camera 33 through the first slit 34, so that the first surface detection camera 32 performs surface detection on the upper surface of the first silicon wafer through the first slit 34 to detect whether there is dirt, holes, etc. on the upper surface of the first silicon wafer; the second surface detection camera 33 also performs surface detection on the upper surface of the second silicon wafer through the first slit 34 to detect whether there is dirt, holes, etc. on the upper surface of the second silicon wafer.

[0088] The first surface detection camera 32 and the second surface detection camera 33 independently detect the upper surface of the first silicon wafer and the upper surface of the second silicon wafer to ensure the upper surface detection accuracy. During the detection process, the first surface detection light source 31 illuminates the upper surface of the first silicon wafer and the second silicon wafer, so that the first surface detection camera 32 and the second surface detection camera 33 can obtain clearer images of the upper surface of the silicon wafer, thereby further improving the upper surface detection accuracy.

[0089] like Fig. 9As shown, optionally, the second surface detection device 6 includes a second surface detection light source 61, a third surface detection camera 62, and a fourth surface detection camera 63, wherein: the second surface detection light source 61 is located below the silicon wafer conveyor line 1, and a second slit 64 extending along the second direction is provided on the second surface detection light source 61, and the third surface detection camera 62 and the fourth surface detection camera 63 are located below the second surface detection light source 61. The second surface detection light source 61 is configured to illuminate the lower surface of the first silicon wafer and the second silicon wafer located at the second surface detection station, and the light emitted by the second surface detection light source 61 is illuminated to the lower surface of the first silicon wafer and the second silicon wafer, and the lower surface of the first silicon wafer reflects the received light and enters the third surface detection camera 62 through the second slit 64, and the lower surface of the second silicon wafer reflects the received light and enters the fourth surface detection camera 63 through the second slit 64. The third surface inspection camera 62 performs surface inspection on the lower surface of the first silicon wafer through the second slit 64 to detect whether there is dirt, holes, etc. on the lower surface of the first silicon wafer. The fourth surface inspection camera 63 performs surface inspection on the lower surface of the second silicon wafer through the second slit 64 to detect whether there is dirt, holes, etc. on the lower surface of the second silicon wafer.

[0090] The third surface detection camera 62 and the fourth surface detection camera 63 independently detect the upper surface of the first silicon wafer and the lower surface of the second silicon wafer to ensure the accuracy of the lower surface detection. During the detection process, the lower surfaces of the first silicon wafer and the second silicon wafer are illuminated by the second surface detection light source 61, so that the third surface detection camera 62 and the fourth surface detection camera 63 can obtain clearer images of the lower surface of the silicon wafer, thereby further improving the accuracy of the lower surface detection.

[0091] like Figure 2 As shown, optionally, the hidden crack detection device 4 includes a hidden crack detection light source 41 and a first hidden crack detection camera 42 and a second hidden crack detection camera 43, wherein: the hidden crack detection light source 41 is located above the silicon wafer conveyor line 1, and the first hidden crack detection camera 42 and the second hidden crack detection camera 43 are located above the hidden crack detection light source 41. The hidden crack detection light source 41 is configured to illuminate the first silicon wafer and the second silicon wafer located at the hidden crack detection station, the first hidden crack detection camera 42 is configured to perform hidden crack detection on the first silicon wafer, and the second hidden crack detection camera 43 is configured to perform hidden crack detection on the second silicon wafer.

[0092] The first crack detection camera 42 and the second crack detection camera 43 independently perform crack detection on the first silicon wafer and the second silicon wafer to ensure crack detection accuracy. During the detection process, the first and second silicon wafers are illuminated by the crack detection light source 41, so that the first and second crack detection cameras 42 and 43 can obtain clearer images of the upper surface of the silicon wafer, thereby further improving the crack detection accuracy.

[0093] like Figure 1 and Figure 3 As shown, optionally, the edge detection station includes a front edge detection station, a first side edge detection station, a second side edge detection station and a rear edge detection station sequentially arranged along the conveying path of the silicon wafer conveying line 1. Correspondingly, the edge detection device 5 includes a front edge detection unit 51, a first side edge detection unit 52, a second side edge detection unit 53 and a rear edge detection unit 54, wherein:

[0094] The front edge detection unit 51 is disposed at the front edge detection station and is configured to detect the front edge, the first front chamfer, and the second front chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station, wherein the first front chamfer is located at the front end of the silicon wafer and faces the first side of the silicon wafer conveyor line 1 (for example, Figure 3 The second front chamfer is located at the front end of the silicon wafer and faces the second side of the silicon wafer conveying line 1 (for example, Figure 3 Chamfer of side B) shown in FIG.

[0095] The first side edge detection unit 52 is disposed at the first side edge detection station, and is configured to detect both side edges of the first silicon wafer 100 located at the first side edge detection station.

[0096] The second side edge detection unit 53 is disposed at the second side edge detection station, and is configured to detect the two side edges of the second silicon wafer 200 located at the second side edge detection station.

[0097] The rear end edge detection unit 54 is disposed at the rear end edge detection station and is configured to detect the rear end edge, the first rear end chamfer and the second rear end chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the rear end edge detection station, wherein the first rear end chamfer is a chamfer located at the rear end of the silicon wafer facing the first side of the silicon wafer conveyor line, and the second rear end chamfer is a chamfer located at the rear end of the silicon wafer facing the second side of the silicon wafer conveyor line.

[0098] By setting the edge detection station to include the front edge detection station, the first side edge detection station, the second side edge detection station and the rear edge detection station sequentially arranged along the conveying path of the silicon wafer conveying line 1. Correspondingly, by setting the edge detection device 5 to include the front edge detection part 51, the first side edge detection part 52, the second side edge detection part 53 and the rear edge detection part 54 arranged at the above-mentioned stations in a one-to-one correspondence, the edge detection device 5 can sequentially complete the detection of the front edge, the two side edges and the rear edge of the first silicon wafer and the second silicon wafer.

[0099] like Figure 3 and Figure 4As shown, optionally, the front edge detection unit 51 includes a front edge detection light source 511, a first front chamfer detection light source 512, a second front chamfer detection light source 513, a first front edge detection camera 514, a second front edge detection camera 515 and a front reflector 516, wherein:

[0100] The first front end chamfer detection light source 512 is located on the first side of the silicon wafer conveyor line 1, the second front end chamfer detection light source 513 is located on the second side of the silicon wafer conveyor line 1, the front end edge detection light source 511 is located above the silicon wafer conveyor line 1, the first front end edge detection camera 514 and the second front end edge detection camera 515 are located above the silicon wafer conveyor line, and the first front end edge detection camera 514 is close to the first side of the silicon wafer conveyor line 1, and the second front end edge detection camera 515 is close to the second side of the silicon wafer conveyor line 1.

[0101] The first front chamfer detection light source 512 is configured to illuminate the first front chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station, the second front chamfer detection light source 513 is configured to illuminate the second front chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station, and the front edge detection light source 511 is configured to illuminate the front edge of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station.

[0102] The first silicon wafer 100 reflects the received light to the first front edge detection camera 514 through the front reflector 516, so as to detect the first front chamfer, the second front chamfer and the front edge of the first silicon wafer 100 by using the first front edge detection camera 514;

[0103] The second silicon wafer 200 reflects the received light to the second front edge detection camera 515 through the front reflector 516 , so that the second front edge detection camera 515 can be used to detect the first front chamfer, the second front chamfer and the front edge of the second silicon wafer 200 .

[0104] It can be seen that by setting the front end edge detection light source 511, the first front end chamfer detection light source 512, the second front end chamfer detection light source 513, the first front end edge detection camera 514, the second front end edge detection camera 515 and the front end reflector 516, and arranging the positions of the above components, the first front end edge detection camera 514 can receive the light reflected by the first front end chamfer, the second front end chamfer and the front end edge of the first silicon wafer 100, thereby completing the detection of the front end edge and the two front end chamfers of the first silicon wafer 100, and the second front end edge detection camera 515 can synchronously receive the light reflected by the first front end chamfer, the second front end chamfer and the front end edge of the second silicon wafer 200, thereby completing the detection of the front end edge and the two front end chamfers of the second silicon wafer 200.

[0105] like Figure 3 As shown, optionally, the first front chamfer detection light source 512 includes a first front point light source 5121 and a second front point light source 5122, wherein the first front point light source 5121 is used to illuminate the first front chamfer of the first silicon wafer 100, and the second front point light source 5122 is used to illuminate the first front chamfer of the second silicon wafer 200.

[0106] By configuring the first front end chamfer detection light source 512 to include a first front end point light source 5121 and a second front end point light source 5122 with different emission angles, the first front end chamfer detection light source 512 can accurately irradiate the first front end chamfer of the first silicon wafer 100 and the first front end chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first front end edge detection camera 514 and the second front end edge detection camera 515 for the first front end chamfer of the first silicon wafer 100 and the first front end chamfer of the second silicon wafer 200.

[0107] The second front chamfer detection light source 513 includes a third front point light source 5131 and a fourth front point light source 5132 , wherein the third front point light source 5131 is used to illuminate the second front chamfer of the first silicon wafer 100 , and the fourth front point light source 5132 is used to illuminate the second front chamfer of the second silicon wafer 200 .

[0108] By configuring the second front chamfer detection light source 513 to include a third front point light source 5131 and a fourth front point light source 5132 with different emission angles, the second front chamfer detection light source 513 can accurately illuminate the second front chamfer of the first silicon wafer 100 and the second front chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first front edge detection camera 514 and the second front edge detection camera 515 for the second front chamfer of the first silicon wafer 100 and the second front chamfer of the second silicon wafer 200. The first front point light source 5121, the second front point light source 5122, the third front point light source 5131 and the fourth front point light source 5132 are respectively installed on both sides of the silicon wafer conveyor line 1 through universal brackets to adjust the irradiation direction of each point light source, and do not occupy the space between the first group of conveyor belts 11 and the second group of conveyor belts 12, so that the structure of the silicon wafer conveyor line 1 is compact.

[0109] Continue to refer Figure 3 and Figure 4As shown, optionally, the rear end edge detection unit 54 includes a rear end edge detection light source 541, a first rear end chamfer detection light source 542, a second rear end chamfer detection light source 543, a first rear end edge detection camera 544, a second rear end edge detection camera 545 and a rear end reflector 546, wherein: the first rear end chamfer detection light source 542 is located on the first side of the silicon wafer conveyor line 1, the second rear end chamfer detection light source 543 is located on the second side of the silicon wafer conveyor line 1, the rear end edge detection light source 541 is located above the silicon wafer conveyor line 1, the first rear end edge detection camera 544 and the second rear end edge detection camera 545 are located above the silicon wafer conveyor line 1, and the first rear end edge detection camera 544 is close to the first side of the silicon wafer conveyor line 1, and the second rear end edge detection camera 545 is close to the second side of the silicon wafer conveyor line 1.

[0110] The first rear-end chamfer detection light source 542 is configured to illuminate the first rear-end chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the rear-end edge detection station, the second rear-end chamfer detection light source 543 is configured to illuminate the second rear-end chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the rear-end edge detection station, and the rear-end edge detection light source 541 is configured to illuminate the rear-end edge of the first silicon wafer 100 and the second silicon wafer 200 located at the rear-end edge detection station.

[0111] The first silicon wafer 100 reflects the received light to the first rear edge detection camera 542 through the rear reflector 546, so as to detect the first rear chamfer, the second rear chamfer and the rear edge of the first silicon wafer 100 by using the first rear edge detection camera 542;

[0112] The second silicon wafer 200 reflects the received light to the second rear end edge detection camera 545 through the rear end reflector 546 , so that the second rear end edge detection camera 545 can be used to detect the first rear end chamfer, the second rear end chamfer and the rear end edge of the second silicon wafer 200 .

[0113] It can be seen that by setting the rear end edge detection light source 541, the first rear end chamfer detection light source 542, the second rear end chamfer detection light source 543, the first rear end edge detection camera 544, the second rear end edge detection camera 545 and the rear end reflector 546, and arranging the positions of the above components, the first rear end edge detection camera 544 can receive the light reflected by the first rear end chamfer, the second rear end chamfer and the rear end edge of the first silicon wafer 100, thereby completing the detection of the rear end edge and the two rear end chamfers of the first silicon wafer 100, and the second rear end edge detection camera 545 can receive the light reflected by the first rear end chamfer, the second rear end chamfer and the rear end edge of the second silicon wafer 200, thereby completing the detection of the rear end edge and the two rear end chamfers of the second silicon wafer 200.

[0114] like Figure 3 As shown, optionally, the first back-end chamfer detection light source 542 includes a first back-end point light source 5421 and a second back-end point light source 5422, the first back-end point light source 5421 is configured to illuminate the first back-end chamfer of the first silicon wafer 100, and the second back-end point light source 5422 is configured to illuminate the first back-end chamfer of the second silicon wafer 200.

[0115] By configuring the first rear-end chamfer detection light source 542 to include a first rear-end endpoint light source 5421 and a second rear-end endpoint light source 5422 having different emission angles, the first rear-end chamfer detection light source 542 can accurately irradiate the first rear-end chamfer of the first silicon wafer 100 and the first rear-end chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first rear-end edge detection camera 544 and the second rear-end edge detection camera 545 for the first rear-end chamfer of the first silicon wafer 100 and the first rear-end chamfer of the second silicon wafer 200.

[0116] The second back-end chamfer detection light source 543 includes a third back-end point light source 5431 and a fourth back-end point light source 5432. The third back-end point light source 5431 is configured to illuminate the second back-end chamfer of the first silicon wafer 100, and the fourth back-end point light source 5432 is configured to illuminate the second back-end chamfer of the second silicon wafer 200.

[0117] By configuring the second rear end chamfer detection light source 543 to include a third rear end point light source 5431 and a fourth rear end point light source 5432 having different emission angles, the second rear end chamfer detection light source 543 can accurately irradiate the second rear end chamfer of the first silicon wafer 100 and the second rear end chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first rear end edge detection camera 544 and the second rear end edge detection camera 545 for the second rear end chamfer of the first silicon wafer 100 and the second rear end chamfer of the second silicon wafer 200.

[0118] Similarly, the first rear end point light source 5421, the second rear end point light source 5422, the third rear end point light source 5431 and the fourth rear end point light source 5432 are also respectively installed on both sides of the silicon wafer conveyor line 1 through universal brackets to adjust the irradiation direction of each point light source without occupying the space between the first group of conveyor belts 11 and the second group of conveyor belts 12, thereby making the silicon wafer conveyor line 1 compact in structure.

[0119] In order to ensure the reflective effect of the front-end reflector 516 and the rear-end reflector 546, the first group of conveyor belts 11 and the second group of conveyor belts 12 in the silicon wafer conveyor line 1 are both connected by multiple conveying sections, and the front-end reflector 516 and the rear-end reflector 546 are respectively arranged in the gaps between adjacent conveying sections. The heights of the front-end reflector 516 and the rear-end reflector 546 are both lower than the conveying surface of the silicon wafer conveyor line 1, which not only ensures the reflective effect of the front-end reflector 516 and the rear-end reflector 546, but also does not affect the normal transportation of the first silicon wafer 100 and the second silicon wafer 200.

[0120] like Figure 3 and Figures 4 to 8 As shown, optionally, the first side edge detection unit 52 includes a first side edge detection light source 521, a second side edge detection light source 522, a first reflector 523, a second reflector 524, a first side edge detection camera 525, and a second side edge detection camera 526, wherein:

[0121] The first side edge detection light source 521, the first reflector 523 and the first side edge detection camera 525 are all located on the first side of the first silicon wafer 100 at the first side edge detection station, and the first side edge detection camera 525 is located above the silicon wafer conveyor line 1, wherein: the first side edge detection light source 521 is used to illuminate the first side edge of the first silicon wafer 100 located at the first side edge detection station, and the first reflector 523 is used to reflect the light reflected from the first side edge of the first silicon wafer 100 upward into the first side edge detection camera 525, so that the first side edge detection camera 525 can detect the first side edge of the first silicon wafer 100.

[0122] The second side edge detection light source 522, the second reflector 524 and the second side edge detection camera 526 are all located on the second side of the first group of conveyor belts 11, and the second side edge detection camera 526 is located above the silicon wafer conveyor line 1, wherein: the second side edge detection light source 522 is used to illuminate the second side edge of the first silicon wafer 100 located at the first side edge detection station, and the second reflector 524 is used to reflect the light reflected from the second side edge of the first silicon wafer 100 upward into the second side edge detection camera 526, so that the second side edge detection camera 526 can detect the second side edge of the first silicon wafer 100.

[0123] It can be seen that by setting the first side edge detection unit 52, the first side edge detection unit 52 can implement synchronous detection of the two side edges of the first silicon wafer 100 located at the first side edge detection station, thereby improving the detection efficiency. In particular, by setting the first reflector 523 and the second reflector 524, the light irradiated by the first side edge detection light source 521 and the second side edge detection light source 522 to the two side edges of the first silicon wafer 100 is reflected upward to the first side edge detection camera 525 and the second side edge detection camera 526 arranged above the silicon wafer conveyor line 1. The first side edge detection camera 525 and the second side edge detection camera 526 are both located above the silicon wafer conveyor line 1, and do not occupy the space between the first group of conveyor belts 11 and the second group of conveyor belts 12, so that the structure of the entire silicon wafer conveyor line 1 is compact and space-saving. In order to make the structure of the silicon wafer conveyor line 1 more compact, the first side edge detection light source 521 and the second side edge detection light source 522 are installed on both sides of the silicon wafer conveyor line 1, and do not occupy the space between the first group of conveyor belts 11 and the second group of conveyor belts 12. The first side edge detection light source 521 and the second side edge detection light source 522 are respectively installed through universal brackets to facilitate adjustment of the irradiation direction of the light sources.

[0124] Similarly, the second side edge detection unit 53 includes a third side edge detection light source 531, a fourth side edge detection light source 532, a third reflector 533, a fourth reflector 534, a third side edge detection camera 535, and a fourth side edge detection camera 536, wherein: the third side edge detection light source 531, the third reflector 533 and the third side edge detection camera 535 are all located on the first side of the second silicon wafer 200 at the second side edge detection station, and the third side edge detection camera 535 is located above the silicon wafer conveyor line 1, wherein the third side edge detection light source 535 is used to irradiate the first side edge of the second silicon wafer 200 located at the second side edge detection station, and the third reflector 533 is used to reflect the light reflected from the first side edge of the second silicon wafer 200 upwards into the third side edge detection camera 535, so that the third side edge detection camera 535 detects the first side edge of the second silicon wafer 200.

[0125] The fourth side edge detection light source 532, the fourth reflector 534 and the fourth side edge detection camera 536 are all located on the second side of the second silicon wafer 200 at the second side edge detection station, and the fourth side edge detection camera 536 is located above the silicon wafer conveyor line 1, wherein the fourth side edge detection light source 532 is used to illuminate the second side edge of the second silicon wafer 200 located at the second side edge detection station, and the fourth reflector 534 is used to reflect the light reflected from the second side edge of the second silicon wafer 200 upward into the fourth side edge detection camera 536, so that the fourth side edge detection camera 536 detects the second side edge of the second silicon wafer 200.

[0126] By setting the second side edge detection unit 53, the second side edge detection unit 53 can implement synchronous detection of the two side edges of the second silicon wafer 200 located at the second side edge detection station. In particular, by setting the third reflector 533 and the fourth reflector 534, the light irradiated by the third side edge detection light source 531 and the fourth side edge detection light source 532 to the two side edges of the second silicon wafer 200 is reflected upward to the third side edge detection camera 535 and the fourth side edge detection camera 536 arranged above the silicon wafer conveyor line 1. Similarly, the third side edge detection camera 535 and the fourth side edge detection camera 536 are also located above the silicon wafer conveyor line 1, and do not occupy the space between the first group of conveyor belts 11 and the second group of conveyor belts 12, so that the structure of the entire silicon wafer conveyor line 1 is compact and space-saving. In order to make the structure of the silicon wafer conveyor line 1 more compact, the third side edge detection light source 531 and the fourth side edge detection light source 532 are also installed on both sides of the silicon wafer conveyor line 1 through a universal bracket, respectively, and do not occupy the space between the first group of conveyor belts 11 and the second group of conveyor belts 12. The third side edge detection light source 531 and the fourth side edge detection light source 532 are respectively installed through universal brackets to facilitate adjustment of the irradiation direction of the light sources.

[0127] like Figures 10 to 13 As shown, optionally, the thickness detection device 7 includes a first mounting bracket 71, a second mounting bracket 72, a first thickness detection assembly 73, a second thickness detection assembly 74, a third thickness detection assembly 75, a fourth thickness detection assembly 76, a fifth thickness detection assembly 77 and a sixth thickness detection assembly 78, wherein: the first mounting bracket 71 and the second mounting bracket 72 are arranged along the conveying path of the silicon wafer conveyor line 1, the first mounting bracket 71 is provided with a first detection channel for the silicon wafer conveyor line to pass through, and the second mounting bracket 72 is provided with a second detection channel for the silicon wafer conveyor line 1 to pass through.

[0128] The first thickness detection assembly 73 and the second thickness detection assembly 74 are arranged on the first side wall of the first mounting bracket 71 away from the second mounting bracket 72, and the third thickness detection assembly 75 and the fourth thickness detection assembly 76 are arranged on the second side wall of the first mounting bracket 71 close to the second mounting bracket 72. When the first silicon wafer and the second silicon wafer pass through the first detection channel, the first thickness detection assembly 73 is used to detect the thickness of the first side portion of the first silicon wafer 100, the second thickness detection assembly 74 is used to detect the thickness of the first side portion of the second silicon wafer 200, the third thickness detection assembly 75 is used to detect the thickness of the second side portion of the first silicon wafer 100, and the fourth thickness detection assembly 76 is used to detect the thickness of the second side portion of the second silicon wafer 200.

[0129] The fifth thickness detection assembly 77 and the sixth thickness detection assembly 78 are disposed on the second side wall of the second mounting bracket 72 away from the first mounting bracket. When the first silicon wafer and the second silicon wafer pass through the second detection channel, the fifth thickness detection assembly 77 is used to detect the thickness of the middle portion of the first silicon wafer 100, and the sixth thickness detection assembly 78 is used to detect the thickness of the middle portion of the second silicon wafer 200.

[0130] It can be seen that by setting the thickness detection device 7, the thickness detection device 7 can simultaneously implement the thickness detection of the first silicon wafer 100 and the second silicon wafer 200, thereby improving the efficiency of silicon wafer thickness detection. In particular, for the first silicon wafer 100, the first thickness detection component 73, the third thickness detection component 75 and the fifth thickness detection component 77 successively realize the thickness detection of the first side, the second side and the middle part of the first silicon wafer 100, so that the thickness and uniformity of the first silicon wafer 100 can be accurately evaluated. Similarly, for the second silicon wafer, the second thickness detection component 74, the fifth thickness detection component 76 and the sixth thickness detection component 78 successively realize the thickness detection of the first side, the second side and the middle part of the second silicon wafer, so that the thickness and uniformity of the second silicon wafer 200 can be accurately evaluated.

[0131] Optionally, the first thickness detection component 73, the second thickness detection component 74, the third thickness detection component 75, the fourth thickness detection component 76, the fifth thickness detection component 77 and the sixth thickness detection component 78 have the same structure and all use existing non-contact laser ranging components.

[0132] As known to those skilled in the art, the non-contact laser side thickness assembly may include two laser sensors, and the silicon wafer to be measured passes between the two laser sensors. As the silicon wafer to be measured moves, the two laser sensors synchronously scan and sample the two opposite surfaces of the silicon wafer to be measured, so as to measure the thickness of the silicon wafer to be detected.

[0133] Taking the first thickness detection assembly 73 as an example, it includes a first laser sensor disposed on the upper side of the first detection channel and a second laser sensor disposed on the lower side of the first detection channel. When the first silicon wafer passes through the first detection channel, the first laser sensor and the second laser sensor synchronously scan two opposite surfaces of the first side portion of the first silicon wafer to implement thickness detection of the first side portion of the first silicon wafer.

[0134] like Fig.13As shown, optionally, the thickness detection device 7 further includes a first resistivity detection component 79, a second resistivity detection component 710, a first P / N type detection component 711, and a second P / N type detection component 712. The first resistivity detection component 79, the second resistivity detection component 710, the first P / N type detection component 711, and the second P / N type detection component 712 are all arranged on the first side wall of the second mounting bracket 72 close to the first mounting bracket 71. When the first silicon wafer 100 and the second silicon wafer 200 pass through the second detection channel, the first resistivity detection component 79 is used to detect the resistivity of the first silicon wafer 100, and the second resistivity detection component 710 is used to detect the resistivity of the second silicon wafer 200. The first P / N type detection component 711 is used to detect the P / N type of the first silicon wafer 100, and the second P / N type detection component 712 is used to detect the P / N type of the second silicon wafer 200.

[0135] Optionally, the first resistivity detection component 79 and the second resistivity detection component 710 use existing resistivity measurement components. For example, the first resistivity detection component 79 and the second resistivity detection component 710 both include a first probe and a second probe disposed on the upper and lower sides of the second detection channel. When the first silicon wafer and the second silicon wafer 200 pass through the second detection channel, the first probe and the second probe of the first resistivity detection component 79 are respectively close to the two opposite surfaces of the first silicon wafer 100 to perform resistivity detection on the first silicon wafer 100 to be detected. Similarly, the first probe and the second probe of the second resistivity detection component 710 are respectively close to the two opposite surfaces of the second silicon wafer to perform resistivity detection on the second silicon wafer to be detected.

[0136] The first P / N type detection component 711 and the second P / N type detection component 712 also use existing P / N type test components. When the first silicon wafer and the second silicon wafer pass through the second detection channel, the first P / N type detection component 711 approaches the first silicon wafer and performs a P / N type detection on the first silicon wafer to determine whether the first silicon wafer is a P-type cell wafer or an N-type cell wafer. The second P / N type detection component 712 approaches the second silicon wafer and performs a P / N type detection on the second silicon wafer to determine whether the second silicon wafer is a P-type cell wafer or an N-type cell wafer.

[0137] like Figure 1 As shown, optionally, a rejecting station, a first straightening station and a second straightening station are further provided on the conveying path of the silicon wafer conveyor line 1, wherein: the rejecting station and the first straightening station are sequentially arranged between the hidden crack detection station and the edge detection station along the conveying path of the silicon wafer conveyor line 1, and the second straightening station is arranged between the edge detection station and the second surface detection station.

[0138] Correspondingly, such as Figure 1As shown, the silicon wafer inspection system in the embodiment of the present application further includes a rejection device 8, a first tidying device 9 and a second tidying device 10.

[0139] The rejection device 8 is arranged at the rejection station, and is configured to reject the first silicon wafer or the second silicon wafer that fails at least one of the size detection, the first surface detection and the hidden crack detection from the silicon wafer conveyor line. In this way, it can prevent the silicon wafers that have been determined to be unqualified after the first three detections from continuing to flow to the subsequent detection stations, wasting detection resources.

[0140] like Fig.14 As shown, optionally, the silicon wafer conveyor line 1 is disconnected at the rejection station to form a discontinuous space. The rejection device 8 adopts an adsorption conveying device, and an NG material box 300 is provided below the rejection device 8. When the silicon wafer conveyor line 1 conveys the silicon wafer to the front side of the discontinuous space, the rejection device 8 absorbs the silicon wafer and conveys the silicon wafer backward. For the unqualified silicon wafers determined by the first three tests, when the silicon wafer is conveyed to the top of the NG material box 300, the rejection device 8 releases the silicon wafer and makes it fall into the NG material box 300. For the qualified silicon wafers determined by the first three tests, the rejection device 8 conveys the silicon wafer and puts it back to the silicon wafer conveyor line 1 at the rear side of the discontinuous space. Of course, the rejection device 8 can also adopt a conveying mechanism with a suction cup, which sucks the silicon wafer to be rejected from the silicon wafer conveyor line 1 and places it in the NG material box 300 nearby.

[0141] The first aligning device 9 is disposed at the first aligning station, and is configured to perform position correction on the first silicon wafer and the second silicon wafer located at the first aligning station, so as to ensure the edge detection effect of the back-end edge detection device 5 on the first silicon wafer and the second silicon wafer. The second aligning device 10 is disposed at the second aligning station, and is configured to perform position correction on the first silicon wafer and the second silicon wafer located at the second aligning station, so as to ensure the second surface detection effect of the back-end second surface detection device 6 on the first silicon wafer and the second silicon wafer.

[0142] Optionally, the first tidying device 9 and the second tidying device 10 have the same structure, such as Fig.15As shown, taking the first tidying device 9 as an example, it includes a first tidying mechanism 91 arranged on both sides of the first group of conveyor belts 11 and a second tidying mechanism 92 arranged on both sides of the second group of conveyor belts 12. The first tidying mechanism 91 and the second tidying mechanism 92 each include two tidying plates arranged opposite to each other. A row of tidying rollers are installed on each tidying plate. The two opposite tidying plates can be driven by a driving mechanism to move closer to or farther from each other. The driving mechanism can use a motor with a connecting rod assembly, etc. When the first silicon wafer 100 and the second silicon wafer 200 enter the first tidying station, the two tidying plates of the first tidying mechanism 91 move closer to the middle, so that the tidying roller contacts the first silicon wafer 100 to tidy it. The two tidying plates of the second tidying mechanism 92 move closer to the middle, so that the tidying roller contacts the second silicon wafer 200 to tidy it.

[0143] The above description of the present application is sufficiently detailed and has certain particularities. Those skilled in the art should understand that the description in the embodiments is merely exemplary, and all changes made without departing from the true spirit and scope of the present application should fall within the scope of protection of the present application. The scope of protection claimed in the present application is defined by the claims, not by the above description in the embodiments. Moreover, the embodiments mentioned in the present application are not limited to being implemented individually, and some embodiments can also be implemented in combination.

Claims

1. A silicon wafer inspection system, characterized in that: The silicon wafer detection system includes a silicon wafer conveyor line, a size detection device, a first surface detection device, a hidden crack detection device, an edge detection device, a second surface detection device and a thickness detection device, wherein: The silicon wafer conveying line is configured to convey a first silicon wafer and a second silicon wafer synchronously along a first direction, wherein the first silicon wafer and the second silicon wafer are placed side by side along a second direction, and the second direction is perpendicular to the first direction; A size detection station, a first surface detection station, a hidden crack detection station, an edge detection station, a second surface detection station and a thickness detection station are arranged on the conveying path of the silicon wafer conveyor line; The size detection device is disposed at the size detection station and is configured to perform size detection on the first silicon wafer and the second silicon wafer located at the size detection station; The first surface detection device is disposed at the first surface detection station and is configured to detect the first surfaces of the first silicon wafer and the second silicon wafer located at the first surface detection station; The hidden crack detection device is disposed at the hidden crack detection station and is configured to perform hidden crack detection on the first silicon wafer and the second silicon wafer located at the hidden crack detection station; The second surface detection device is disposed at the second surface detection station and is configured to detect the second surface of the first silicon wafer and the second silicon wafer located at the second surface detection station, wherein the second surface is a surface opposite to the first surface; The edge detection device is disposed at the edge detection station and is configured to detect edges of the first silicon wafer and the second silicon wafer located at the edge detection station; The thickness detection device is disposed at the thickness detection station, and is configured to perform thickness detection on the first silicon wafer and the second silicon wafer located at the thickness detection station.

2. The silicon wafer inspection system according to claim 1, characterized in that: The silicon wafer conveying line includes two sets of conveying belts arranged in parallel, and the two sets of conveying belts are used to convey the first silicon wafer and the second silicon wafer respectively.

3. The silicon wafer inspection system according to claim 1, characterized in that: The size detection device includes a size detection light source and a first size detection camera and a second size detection camera, wherein the size detection light source is located below the silicon wafer conveyor line, and the first size detection camera and the second size detection camera are located above the silicon wafer conveyor line; The size detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the size detection station, and the first size detection camera and the second size detection camera are configured to perform size detection on the first silicon wafer and the second silicon wafer, respectively.

4. The silicon wafer inspection system according to claim 1, characterized in that: The first surface is an upper surface, and the second surface is a lower surface; The first surface detection device includes a first surface detection light source and a first surface detection camera and a second surface detection camera, wherein: the first surface detection light source is located above the silicon wafer conveyor line, the first surface detection light source is provided with a first slit extending along the second direction, the first surface detection camera and the second surface detection camera are located above the first surface detection light source; the first surface detection light source is configured to irradiate the upper surfaces of the first silicon wafer and the second silicon wafer located at the first surface detection station, the first surface detection camera is configured to perform surface detection on the upper surface of the first silicon wafer through the first slit, and the second surface detection camera is configured to perform surface detection on the upper surface of the second silicon wafer through the first slit; The second surface detection device includes a second surface detection light source and a third surface detection camera and a fourth surface detection camera, wherein: the second surface detection light source is located below the silicon wafer conveyor line, the second surface detection light source is provided with a second slit extending along the second direction, the third surface detection camera and the fourth surface detection camera are located below the second surface detection light source; the second surface detection light source is configured to irradiate the lower surfaces of the first silicon wafer and the second silicon wafer located at the second surface detection station, the third surface detection camera is configured to perform surface detection on the lower surface of the first silicon wafer through the second slit, and the fourth surface detection camera is configured to perform surface detection on the lower surface of the second silicon wafer through the second slit.

5. The silicon wafer inspection system according to claim 1, characterized in that: The hidden crack detection device includes a hidden crack detection light source and a first hidden crack detection camera and a second hidden crack detection camera, wherein: The hidden crack detection light source is located above the silicon wafer conveyor line, and the first hidden crack detection camera and the second hidden crack detection camera are located above the hidden crack detection camera; The crack detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the crack detection station, the first crack detection camera is configured to perform crack detection on the first silicon wafer, and the second crack detection camera is configured to perform crack detection on the second silicon wafer.

6. The silicon wafer inspection system according to claim 1, characterized in that: The edge detection station comprises a front edge detection station, a first side edge detection station, a second side edge detection station and a rear edge detection station which are sequentially arranged along the conveying path of the silicon wafer conveying line; The edge detection device comprises a front edge detection unit, a first side edge detection unit, a second side edge detection unit and a rear edge detection unit, wherein: The front end edge detection unit is disposed at the front end edge detection station, and is configured to detect the front end edge, the first front end chamfer, and the second front end chamfer of the first silicon wafer and the second silicon wafer located at the front end edge detection station, wherein the first front end chamfer is a chamfer located at the front end of the silicon wafer facing the first side of the silicon wafer conveying line, and the second front end chamfer is a chamfer located at the front end of the silicon wafer facing the second side of the silicon wafer conveying line; The first side edge detection unit is disposed at the first side edge detection station and is configured to detect both side edges of the first silicon wafer located at the first side edge detection station; The second side edge detection unit is disposed at the second side edge detection station and is configured to detect both side edges of the second silicon wafer located at the second side edge detection station; The rear end edge detection unit is arranged at the rear end edge detection station, and is configured to detect the rear end edge, the first rear end chamfer and the second rear end chamfer of the first silicon wafer and the second silicon wafer located at the rear end edge detection station, wherein the first rear end chamfer is a chamfer located at the rear end of the silicon wafer facing the first side of the silicon wafer conveying line, and the second rear end chamfer is a chamfer located at the rear end of the silicon wafer facing the second side of the silicon wafer conveying line.

7. The silicon wafer inspection system according to claim 6, characterized in that: The front edge detection unit includes a front edge detection light source, a first front chamfer detection light source, a second front chamfer detection light source, a first front edge detection camera, a second front edge detection camera and a front reflector, wherein: The first front chamfer detection light source is located at a first side of the silicon wafer conveyor line, the second front chamfer detection light source is located at a second side of the silicon wafer conveyor line, the front edge detection light source is located above the silicon wafer conveyor line, the first front edge detection camera and the second front edge detection camera are located above the silicon wafer conveyor line, and the first front edge detection camera is close to the first side of the silicon wafer conveyor line, and the second front edge detection camera is close to the second side of the silicon wafer conveyor line; The first front chamfer detection light source is configured to illuminate the first front chamfers of the first silicon wafer and the second silicon wafer located at the front edge detection station, the second front chamfer detection light source is configured to illuminate the second front chamfers of the first silicon wafer and the second silicon wafer located at the front edge detection station, and the front edge detection light source is configured to illuminate the front edges of the first silicon wafer and the second silicon wafer located at the front edge detection station; The first silicon wafer reflects the received light to the first front edge detection camera through the front reflector, so as to detect the first front chamfer, the second front chamfer and the front edge of the first silicon wafer by using the first front edge detection camera; The second silicon wafer reflects the received light to the second front end edge detection camera through the front end reflector, so as to utilize the second front end edge detection camera to detect the first front end chamfer, the second front end chamfer and the front end edge of the second silicon wafer.

8. The silicon wafer inspection system according to claim 7, characterized in that: The first front chamfer detection light source includes a first front point light source and a second front point light source, wherein the first front point light source is used to illuminate the first front chamfer of the first silicon wafer, and the second front point light source is used to illuminate the first front chamfer of the second silicon wafer; The second front chamfer detection light source includes a third front point light source and a fourth front point light source, wherein the third front point light source is used to illuminate the second front chamfer of the first silicon wafer, and the fourth front point light source is used to illuminate the second front chamfer of the second silicon wafer.

9. The silicon wafer inspection system according to claim 6, characterized in that: The first side edge detection unit includes a first side edge detection light source, a second side edge detection light source, a first reflector, a second reflector, a first side edge detection camera, and a second side edge detection camera, wherein: The first side edge detection light source, the first reflector, and the first side edge detection camera are all located on the first side of the first silicon wafer at the first side edge detection station, and the first side edge detection camera is located above the silicon wafer conveyor line, wherein: the first side edge detection light source is used to illuminate the first side edge of the first silicon wafer located at the first side edge detection station, and the first reflector is used to reflect the light reflected from the first side edge of the first silicon wafer upwards into the first side edge detection camera, so that the first side edge detection camera detects the first side edge of the first silicon wafer; The second side edge detection light source, the second reflector and the second side edge detection camera are all located on the second side of the first silicon wafer at the first side edge detection station, and the second side edge detection camera is located above the silicon wafer conveyor line, wherein: the second side edge detection light source is used to illuminate the second side edge of the first silicon wafer located at the first side edge detection station, and the second reflector is used to reflect light reflected from the second side edge of the first silicon wafer upward into the second side edge detection camera, so that the second side edge detection camera can detect the second side edge of the first silicon wafer.

10. The silicon wafer inspection system according to claim 6, characterized in that: The second side edge detection unit includes a third side edge detection light source, a fourth side edge detection light source, a third reflector, a fourth reflector, a third side edge detection camera, and a fourth side edge detection camera, wherein: The third side edge detection light source, the third reflector and the third side edge detection camera are all located at the first side of the second silicon wafer at the second side edge detection station, and the third side edge detection camera is located above the silicon wafer conveyor line, wherein the third side edge detection light source is used to illuminate the first side edge of the second silicon wafer located at the second side edge detection station, and the third reflector is used to reflect the light reflected from the first side edge of the second silicon wafer upwards into the third side edge detection camera, so that the third side edge detection camera detects the first side edge of the second silicon wafer; The fourth side edge detection light source, the fourth reflector and the fourth side edge detection camera are all located on the second side of the second silicon wafer at the second side edge detection station, and the fourth side edge detection camera is located above the silicon wafer conveyor line, wherein the fourth side edge detection light source is used to illuminate the second side edge of the second silicon wafer located at the second side edge detection station, and the fourth reflector is used to reflect the light reflected from the second side edge of the second silicon wafer upward into the fourth side edge detection camera, so that the fourth side edge detection camera detects the second side edge of the second silicon wafer.

11. The silicon wafer inspection system according to claim 6, characterized in that: The rear edge detection unit includes a rear edge detection light source, a first rear chamfer detection light source, a second rear chamfer detection light source, a first rear edge detection camera, a second rear edge detection camera and a rear reflector, wherein: The first rear-end chamfer detection light source is located at a first side of the silicon wafer conveying line, the second rear-end chamfer detection light source is located at a second side of the silicon wafer conveying line, the rear-end edge detection light source is located above the silicon wafer conveying line, the first rear-end edge detection camera and the second rear-end edge detection camera are located above the silicon wafer conveying line, and the first rear-end edge detection camera is close to the first side of the silicon wafer conveying line, and the second rear-end edge detection camera is close to the second side of the silicon wafer conveying line; The first rear chamfer detection light source is configured to illuminate the first rear chamfers of the first silicon wafer and the second silicon wafer located at the rear edge detection station, the second rear chamfer detection light source is configured to illuminate the second rear chamfers of the first silicon wafer and the second silicon wafer located at the rear edge detection station, and the rear edge detection light source is configured to illuminate the rear edges of the first silicon wafer and the second silicon wafer located at the rear edge detection station; The first silicon wafer reflects the received light to the first rear edge detection camera through the rear reflector, so as to detect the first rear chamfer, the second rear chamfer and the rear edge of the first silicon wafer using the first rear edge detection camera; The second silicon wafer reflects the received light to the second rear end edge detection camera through the rear end reflector, so as to utilize the second rear end edge detection camera to detect the first rear end chamfer, the second rear end chamfer and the rear end edge of the second silicon wafer.

12. The silicon wafer inspection system according to claim 11, characterized in that: The first rear chamfer detection light source includes a first rear end point light source and a second rear end point light source, the first rear end point light source is configured to illuminate the first rear chamfer of the first silicon wafer, and the second rear end point light source is configured to illuminate the first rear chamfer of the second silicon wafer; The second back-end chamfer detection light source includes a third back-end point light source and a fourth back-end point light source, the third back-end point light source is configured to illuminate the second back-end chamfer of the first silicon wafer, and the fourth back-end point light source is configured to illuminate the second back-end chamfer of the second silicon wafer.

13. The silicon wafer inspection system according to claim 1, characterized in that: The thickness detection device includes a first mounting bracket, a second mounting bracket, a first thickness detection component, a second thickness detection component, a third thickness detection component, a fourth thickness detection component, a fifth thickness detection component and a sixth thickness detection component, wherein: The first mounting bracket and the second mounting bracket are arranged along the conveying path of the silicon wafer conveying line, the first mounting bracket is provided with a first detection channel for the silicon wafer conveying line to pass through, and the second mounting bracket is provided with a second detection channel for the silicon wafer conveying line to pass through; The first thickness detection assembly and the second thickness detection assembly are arranged on a first side wall of the first mounting bracket away from the second mounting bracket, and the third thickness detection assembly and the fourth thickness detection assembly are arranged on a second side wall of the first mounting bracket close to the second mounting bracket; When the first silicon wafer and the second silicon wafer pass through the first detection channel, the first thickness detection assembly is used to detect the thickness of the first side portion of the first silicon wafer, the second thickness detection assembly is used to detect the thickness of the first side portion of the second silicon wafer, the third thickness detection assembly is used to detect the thickness of the second side portion of the first silicon wafer, and the fourth thickness detection assembly is used to detect the thickness of the second side portion of the second silicon wafer; The fifth thickness detection assembly and the sixth thickness detection assembly are arranged on a second side wall of the second mounting bracket away from the first mounting bracket; When the first silicon wafer and the second silicon wafer pass through the second detection channel, the fifth thickness detection component is used to detect the thickness of the middle part of the first silicon wafer, and the sixth thickness detection component is used to detect the thickness of the middle part of the second silicon wafer.

14. The silicon wafer inspection system according to claim 13, characterized in that: The first thickness detection component, the second thickness detection component, the third thickness detection component, the fourth thickness detection component, the fifth thickness detection component and the sixth thickness detection component have the same structure, and the first thickness detection component includes: A first laser sensor disposed on the upper side of the first detection channel and a second laser sensor disposed on the lower side of the first detection channel; When the first silicon wafer and the second silicon wafer pass through the first detection channel, the first laser sensor and the second laser sensor synchronously scan two opposite surfaces of the first side portion of the first silicon wafer to perform thickness detection on the first side portion of the first silicon wafer.

15. The silicon wafer inspection system according to claim 13, characterized in that: The thickness detection device also includes a first resistivity detection component, a second resistivity detection component, a first P / N type detection component and a second P / N type detection component; The first resistivity detection component, the second resistivity detection component, the first P / N type detection component and the second P / N type detection component are all arranged on a first side wall of the second mounting bracket close to the first mounting bracket; When the first silicon wafer and the second silicon wafer pass through the second detection channel, the first resistivity detection component is used to detect the resistivity of the first silicon wafer, and the second resistivity detection component is used to detect the resistivity of the second silicon wafer; The first P / N type detection component is used to detect the P / N type of the first silicon wafer, and the second P / N type detection component is used to detect the P / N type of the second silicon wafer.

16. The silicon wafer inspection system according to claim 1, characterized in that: The conveying path of the silicon wafer conveyor line is also provided with a rejection station, a first tidying station and a second tidying station, wherein: The rejecting station and the first regularizing station are sequentially arranged between the hidden crack detection station and the edge detection station along the conveying path of the silicon wafer conveying line, and the second regularizing station is arranged between the edge detection station and the second surface detection station; The silicon wafer inspection system further includes a rejection device, a first aligning device and a second aligning device, wherein: The rejecting device is disposed at the rejecting station and is configured to reject the first silicon wafer or the second silicon wafer that fails at least one of the size detection, the first surface detection and the hidden crack detection from the silicon wafer conveying line; The first aligning device is disposed at the first aligning station and is configured to perform position correction on the first silicon wafer and the second silicon wafer located at the first aligning station; The second aligning device is disposed at the second aligning station and is configured to perform position correction on the first silicon wafer and the second silicon wafer located at the second aligning station.

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