Novel device applied to thick aluminum growth

Abstract

The utility model provides a novel device applied to thick aluminum growth. The novel device comprises a heating device; the three groups of C-shaped buckles are respectively arranged on three sides of the bottom of the heating device, a ring structure is arranged at the top of the heating device, a wafer is arranged at the top of the ring structure, and C-shaped grooves are formed in three sides of the outer surface of the ring structure. According to the novel device applied to thick aluminum growth, the strip-shaped groove is dug in the side edge of the ring structure, the ring structure is fixed to the heating device in a buckle locking mode, the ring structure can be effectively prevented from being stuck and brought up, the ring structure can be manually disassembled to be sent out for cleaning when PM is detected, the ring structure is manually locked through the buckle when used after returning, and the ring structure is convenient to use. And the frequency of sheet sticking caused by the ring structure and the edge of the heating device in the PM last stage of thick aluminum can be effectively reduced, so that the PM period is prolonged, and the equipment working time is prolonged.

Description

Technical Field

[0001] The utility model relates to the field of thick aluminum process, in particular to a novel device used for thick aluminum growth. Background Art

[0002] Thick aluminum process is a process used in semiconductor manufacturing to sputter thick aluminum on the wafer for integrated IC manufacturing, so as to introduce contact current for subsequent wafer packaging. It is widely used in semiconductor logic products, automotive power devices, and integrated control devices for solar energy storage and electricity storage. It is widely used in aerospace electronics, automotive electronics, high-speed rail current controllers, and solar energy conversion and transformation devices.

[0003] In the process of thick aluminum production, a high-temperature sputtering process is usually used. The thickness of aluminum grown on the wafer exceeds 4um, which is used as a power contact to introduce current. During the aluminum growth process on the wafer, aluminum will be sputtered to varying degrees onto various protective devices in the cavity. They will be disassembled regularly for cleaning and repeated use.

[0004] The Dep ring on the heater with a diameter of 198mm protects the heater from being sputtered by aluminum. The inner diameter is 199mm-200mm. It is usually placed outside the heater and its height is about 1-1.5mm lower than the heater. Due to long-term use, the aluminum will grow thicker, resulting in a sticking effect with the edge of the wafer, causing the wafer to be passed through the three metal rods of the heater by the lift pin. The through-hole positions on the surface of the heater form the three vertices of an equilateral triangle, with the top and bottom positions at half the radius of the heater. The center of the heater is exactly the midpoint of the triangle formed by the three holes. The liftpin is driven by the up and down movement of the tray fixed at the bottom. It is mainly convenient for the wafer production process to be completed, and the wafer can be lifted to facilitate the robot arm to enter the cavity to take the wafer away. When lifting, the aluminum sticks to the back of the wafer edge and the Dep ring, causing the Dep ring to shift, resulting in wafer shift problems in subsequent wafer processing, resulting in poor process or fragmentation.

[0005] Therefore, it is necessary to provide a new device for thick aluminum growth to solve the above technical problems. Utility Model Content

[0006] The utility model provides a novel device for thick aluminum growth, which solves the problem that during the thick aluminum growth process, the aluminum grown on the Depring and the aluminum grown under the edge of the wafer have a bonding effect at the end of PM, resulting in wafer sticking, and the Dep ring is displaced when the wafer is lifted by the liftpin, thereby causing failure in subsequent wafer production.

[0007] In order to solve the above technical problems, the utility model provides a novel device for thick aluminum growth, comprising: a heating device;

[0008] C-shaped clips, three groups of C-shaped clips are respectively arranged on three sides of the bottom of the heating device, a ring structure is arranged on the top of the heating device, a wafer is arranged on the top of the ring structure, and C-shaped grooves are opened on three sides of the outer surface of the ring structure.

[0009] Preferably, a lifting pin is provided at the bottom of the heating device.

[0010] Preferably, the C-shaped groove and the C-shaped buckle are adapted to each other.

[0011] Preferably, mounting devices are fixedly mounted on three sides of the bottom of the heating device, the surface of the mounting device is threadedly engaged with a limiting device, and positioning grooves are provided on three sides of the top of the ring structure.

[0012] Preferably, the mounting device includes a connecting plate, a vertical plate, a horizontal plate and a threaded hole, the connecting plate is fixedly mounted on the bottom of the heating device, the vertical plate is fixedly mounted on one side of the surface of the connecting plate, the horizontal plate is fixedly mounted on the other side of the surface of the vertical plate, and the threaded hole is opened on one side of the surface of the horizontal plate.

[0013] Preferably, the limiting device comprises a threaded rod and a limiting plate, the threaded rod is threadably engaged with the inside of the threaded hole, and the limiting plate is sleeved on the outer surface of the threaded rod.

[0014] Preferably, a limiting groove is provided on one side of the surface of the vertical plate, a limiting rod is fixedly installed inside the limiting groove, and a sliding block is fixedly installed on one side of the limiting plate.

[0015] Compared with the related art, the novel device for thick aluminum growth provided by the utility model has the following beneficial effects:

[0016] The utility model provides a novel device applied to the growth of thick aluminum. Strip grooves are dug on the sides of the ring structure and the ring structure is fixed on the heating device by means of snap locks, which can effectively prevent the ring structure from being stuck and lifted up. During PM, the ring structure can be manually disassembled and sent out for cleaning, and can be manually locked with the snap locks when returned for use. This can effectively reduce the frequency of sticking between the ring structure and the edge of the heating device at the end of PM of thick aluminum, thereby extending the PM cycle and increasing the working time of the equipment.

[0017] The utility model provides a novel device applied to thick aluminum growth, by fixing three groups of installation devices and limiting devices on three sides of the bottom of a heating device, rotating the threaded rod to engage the threaded hole and push the limiting plate to be pressed on the positioning groove of the ring structure, so as to limit the ring structure. The device has a simple structure and strong practicality, the buckle cannot be disassembled and is not easy to lose, and the position is not shifted by external force, thereby improving the installation effect of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic structural diagram of a first embodiment of a novel device for thick aluminum growth provided by the utility model;

[0019] Figure 2 for Figure 1 A schematic cross-sectional view of the ring structure shown;

[0020] Figure 3 A schematic structural diagram of a second embodiment of a novel device for thick aluminum growth provided by the utility model;

[0021] Figure 4 for Figure 3 An enlarged schematic diagram of point A is shown;

[0022] Figure 5 for Figure 4 The schematic diagram of the installation device structure shown;

[0023] Figure 6 for Figure 5 An enlarged schematic diagram of point B is shown.

[0024] Numbers in the figure: 1. heating device, 2. C-type buckle, 3. ring structure, 4. wafer, 5. lifting pin, 6. C-type groove, 7. mounting device, 71. connecting plate, 72. vertical plate, 73. horizontal plate, 74. threaded hole, 8. limiting device, 81. threaded rod, 82. limiting plate, 9. positioning groove, 10. limiting groove, 11. limiting rod, 12. slider. DETAILED DESCRIPTION

[0025] The utility model is further described below in conjunction with the accompanying drawings and implementation modes.

[0026] First embodiment

[0027] Please refer to Figure 1 and Figure 2 ,in, Figure 1 A schematic structural diagram of a first embodiment of a novel device for thick aluminum growth provided by the utility model; Figure 2 for Figure 1 A schematic cross-sectional view of the ring structure is shown. A novel device for thick aluminum growth comprises: a heating device 1;

[0028] C-shaped buckles 2, three groups of C-shaped buckles 2 are respectively arranged on three sides of the bottom of the heating device 1, a ring structure 3 is arranged on the top of the heating device 1, a wafer 4 is arranged on the top of the ring structure 3, and C-shaped grooves 6 are opened on three sides of the outer surface of the ring structure 3.

[0029] A lifting pin 5 is provided at the bottom of the heating device 1 .

[0030] The C-shaped groove 6 is matched with the C-shaped buckle 2 .

[0031] Three C-shaped grooves 6 are respectively opened in the middle of the edge of the ring structure 3, and are distributed at a one hundred and twenty degree angle. The three C-shaped grooves 6 are equidistantly distributed on three sides of the outer surface of the ring structure 3. The C-shaped grooves 6 are adapted to the C-shaped buckles 2, and three C-shaped buckles 2 are also provided. When the ring structure 3 is installed on the surface of the heating device 1, the three C-shaped buckles 2 are matched with the three C-shaped grooves 6 respectively.

[0032] The working principle of a novel device for thick aluminum growth provided by the utility model is as follows:

[0033] During operation, firstly, a C-shaped groove 6 is dug on the edge of the ring structure 3, and the C-shaped buckle 2 is installed on the bottom of the heating device 1 by means of screws, and one side of the C-shaped buckle 2 is embedded into the inside of the C-shaped groove 6 to restrict the ring structure 3 to the top surface of the heating device 1.

[0034] After the wafer process is completed, the lifting pin 5 is raised by controlling the external power supply to lift the wafer, so that the robot arm can take out the wafer.

[0035] When the ring structure 3 is disassembled, the screws are removed, and the C-shaped buckle 2 is removed. The C-shaped buckle 2 is separated from the C-shaped groove 6, and the ring structure 3 is not restricted and can be easily disassembled.

[0036] Compared with the related art, the novel device for thick aluminum growth provided by the utility model has the following beneficial effects:

[0037] The utility model provides a novel device for growing thick aluminum. By digging strip grooves on the sides of the ring structure 3 and fixing the ring structure 3 on the heating device 1 by means of snap-locking, the ring structure 3 can be effectively prevented from being stuck and lifted up. During PM, the ring structure 3 can be manually disassembled and sent out for cleaning. When it is returned for use, the snap-locking can be manually used. This can effectively reduce the frequency of sticking between the ring structure 3 and the edge of the heating device 1 at the end of PM of thick aluminum, thereby extending the PM cycle and increasing the working time of the equipment.

[0038] Second embodiment

[0039] Please refer to Figure 3 , Figure 4 and Figure 5 Based on the novel device for thick aluminum growth provided by the first embodiment of the present application, the second embodiment of the present application proposes another novel device for thick aluminum growth. The second embodiment is only a preferred method of the first embodiment, and the implementation of the second embodiment will not affect the independent implementation of the first embodiment.

[0040] Specifically, the second embodiment of the present application provides a new device for thick aluminum growth. The difference is that, in a new device for thick aluminum growth, the three sides of the bottom of the heating device 1 are fixedly installed with mounting devices 7, the surface of the mounting device 7 is threadedly engaged with a limiting device 8, and the three sides of the top of the ring structure 3 are provided with positioning grooves 9.

[0041] The mounting device 7 includes a connecting plate 71, a vertical plate 72, a horizontal plate 73 and a threaded hole 74. The connecting plate 71 is fixedly mounted on the bottom of the heating device 1, the vertical plate 72 is fixedly mounted on one side of the surface of the connecting plate 71, the horizontal plate 73 is fixedly mounted on the other side of the surface of the vertical plate 72, and the threaded hole 74 is opened on one side of the surface of the horizontal plate 73.

[0042] The limiting device 8 includes a threaded rod 81 and a limiting plate 82 . The threaded rod 81 is threadedly engaged with the inside of the threaded hole 74 , and the limiting plate 82 is sleeved on the outer surface of the threaded rod 81 .

[0043] A limiting groove 10 is formed on one side of the surface of the vertical plate 72 , a limiting rod 11 is fixedly installed inside the limiting groove 10 , and a sliding block 12 is fixedly installed on one side of the limiting plate 82 .

[0044] The working principle of a novel device for thick aluminum growth provided by the utility model is as follows:

[0045] During operation, the ring structure 3 is first installed on the top of the heating device 1. The user rotates the threaded rod 81, and the threaded rod 81 engages with the threaded hole 74 to push the limit plate 82 downward. The limit plate 82 drives the slider 12 to slide along the limit rod 11, so that the limit plate 82 is pressed inside the positioning groove 9, and the ring structure 3 is installed on the heating device 1.

[0046] When disassembling the ring structure 3 , the user rotates the threaded rod 81 in the reverse direction, and the threaded rod 81 is threadedly engaged with the threaded hole 74 to move upward and pull the limiting plate 82 upward.

[0047] Compared with the related art, the novel device for thick aluminum growth provided by the utility model has the following beneficial effects:

[0048] The utility model provides a novel device applied to the growth of thick aluminum. By fixing three groups of mounting devices 7 and limiting devices 8 on three sides of the bottom of a heating device 1, a threaded rod 81 is rotated to threadably engage a threaded hole 74 and push a limiting plate 82 to be pressed on a positioning groove 9 of a ring structure 3, so as to limit the ring structure 3. The device has a simple structure and strong practicality. The buckle cannot be disassembled and is not easily lost. The position is not shifted due to external forces, thereby improving the installation effect of the device.

[0049] The above description is only an embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A novel device for thick aluminum growth, characterized in that: include: Heating device; C-shaped clips, three groups of C-shaped clips are respectively arranged on three sides of the bottom of the heating device, a ring structure is arranged on the top of the heating device, a wafer is arranged on the top of the ring structure, and C-shaped grooves are opened on three sides of the outer surface of the ring structure.

2. A novel device for thick aluminum growth according to claim 1, characterized in that: A lifting pin is arranged at the bottom of the heating device.

3. A novel device for thick aluminum growth according to claim 1, characterized in that: The C-shaped groove and the C-shaped buckle are adapted to each other.

4. A novel device for thick aluminum growth according to claim 1, characterized in that: The three sides of the bottom of the heating device are fixedly mounted with mounting devices, the surface of the mounting device is threadedly combined with a limiting device, and the three sides of the top of the ring structure are provided with positioning grooves.

5. A novel device for thick aluminum growth according to claim 4, characterized in that: The mounting device includes a connecting plate, a vertical plate, a horizontal plate and a threaded hole. The connecting plate is fixedly mounted on the bottom of the heating device, the vertical plate is fixedly mounted on one side of the surface of the connecting plate, the horizontal plate is fixedly mounted on the other side of the surface of the vertical plate, and the threaded hole is opened on one side of the surface of the horizontal plate.

6. A novel device for thick aluminum growth according to claim 5, characterized in that: The limiting device comprises a threaded rod and a limiting plate. The threaded rod is threadedly engaged with the inside of the threaded hole, and the limiting plate is sleeved on the outer surface of the threaded rod.

7. A novel device for thick aluminum growth according to claim 6, characterized in that: A limiting groove is provided on one side of the surface of the vertical plate, a limiting rod is fixedly installed inside the limiting groove, and a sliding block is fixedly installed on one side of the limiting plate.

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