Radio frequency power supply system and semiconductor process equipment

Abstract

The utility model relates to the technical field of radio frequency application, and discloses a radio frequency power supply system and semiconductor process equipment. The radio frequency power supply system comprises a radio frequency power generation circuit, a switching circuit and an impedance matching circuit, the radio frequency power generation circuit is used for accessing an external alternating current voltage source and outputting radio frequency power; the switching circuit is connected with the output end of the radio frequency power generation circuit, is provided with a first output branch and a second output branch, and can output radio frequency power output by the radio frequency power generation circuit through the first output branch or the second output branch; the impedance matching circuit is provided with at least two groups of impedance matching branches and is used for providing impedance matching for the radio frequency power output by the radio frequency power generation circuit; the impedance matching branches are respectively connected with the output end of the first output branch, and the impedance values of the impedance matching branches are different from each other. According to the embodiment of the invention, the impedance matching time between the radio frequency power generation circuit and the reaction chamber can be reduced, and the process efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of radio frequency application technology, and in particular to a radio frequency power supply system and semiconductor process equipment. Background Art

[0002] The RF power system is a device used to generate RF power signals. It is a core component of semiconductor process equipment and is used to provide energy to equipment that generates plasma for material processing.

[0003] In the related art, the RF power supply system provides RF signal energy to the reaction chamber to generate plasma. In order to match the output impedance of the RF power generation circuit with the impedance of the reaction chamber, an impedance matcher needs to be set between the RF power generation circuit and the reaction chamber, and the RF power generation circuit provides RF signal energy to the reaction chamber through the impedance matcher. However, in the existing RF power supply system, for processes with relatively constant impedance matching, conventional matchers are used for large-range impedance operations, and impedance matching takes a long time, which reduces process efficiency. Utility Model Content

[0004] The purpose of this application is to provide a radio frequency power supply system and semiconductor process equipment, aiming to reduce the time for impedance matching between the radio frequency power generating circuit and the reaction chamber, thereby improving the process efficiency.

[0005] The present application provides a radio frequency power supply system, including:

[0006] A radio frequency power generating circuit, used for connecting to an external AC voltage source and outputting radio frequency power;

[0007] a switching circuit connected to the output end of the radio frequency power generating circuit, having a first output branch and a second output branch, and capable of outputting the radio frequency power output by the radio frequency power generating circuit through the first output branch or the second output branch; and

[0008] The impedance matching circuit has at least two groups of impedance matching branches, which are used to provide impedance matching for the RF power output by the RF power generating circuit; each of the impedance matching branches is respectively connected to the output end of the first output branch, and the impedance values ​​of each of the impedance matching branches are different from each other.

[0009] Furthermore, the impedance matching circuit comprises:

[0010] Resonator circuit;

[0011] A multi-segment inductor having at least two groups of impedance coil segments, wherein a first end of one impedance coil segment is connected to a second end of another impedance coil segment or to a first end of the resonant subcircuit;

[0012] Switching devices, the number of the switching devices is the same as the number of the impedance coil segments, a first end of the switching device is connected to a second end of the impedance coil segment, and a second end of the switching device is connected to the second end of the resonant subcircuit.

[0013] Furthermore, the switch device is selected from a path selector, a relay, a transistor and / or a MOS tube.

[0014] Furthermore, the impedance value of each impedance matching branch increases monotonically according to a preset order.

[0015] Furthermore, the radio frequency power generating circuit comprises:

[0016] A rectifier circuit, used for receiving external AC power and rectifying it into DC power;

[0017] A first filtering subcircuit, connected to the output end of the rectifier subcircuit, for filtering the rectified DC power to obtain filtered DC power;

[0018] an inverter subcircuit, connected to the output end of the first filter subcircuit, and used for inverting the filtered DC power into AC power;

[0019] a voltage conversion subcircuit, connected to the output end of the inverter subcircuit, for performing voltage conversion on the AC power obtained by inversion; and

[0020] The second filtering subcircuit is connected to the output end of the voltage conversion subcircuit and is used for filtering the AC power obtained by voltage conversion to obtain radio frequency power.

[0021] Further, the input end of the first output branch is connected to the output end of the RF power generating circuit, and the output end of the first output branch is connected to the output end of the impedance matching circuit;

[0022] The input end of the second output branch is connected to the output end of the radio frequency power generating circuit, and the output end of the second output branch is used to connect to an external reaction chamber or an external matching device.

[0023] Furthermore, the radio frequency power supply system also includes a power regulation circuit;

[0024] The power regulating circuit is connected to the output end of the RF power generating circuit, and is used to collect the RF power output by the RF power generating circuit and output a first regulating signal so that the RF power generating circuit outputs the RF power corresponding to the first regulating signal.

[0025] Further, the power regulation circuit comprises:

[0026] A power sensor connected to the output end of the radio frequency power generating circuit;

[0027] an analog-to-digital converter connected to an output end of the power sensor; and

[0028] The power regulation module is connected to the output end of the analog-to-digital converter and is used to output a corresponding regulation signal according to the collected radio frequency power.

[0029] Furthermore, the power adjustment module is connected to the impedance matching circuit, and is used to collect the matching power output by the impedance matching circuit and output a second adjustment signal to turn on the impedance matching branch corresponding to the second adjustment signal.

[0030] The present application also provides a semiconductor process equipment, including the above-mentioned radio frequency power supply system.

[0031] The beneficial effects of the present application are as follows: the RF power output by the RF power generating circuit and the impedance matching circuit of the multi-stage impedance matching structure are received through the switching circuit. For a process environment with a relatively constant impedance matching amount, the switching circuit can be set to output the RF power to the impedance matching circuit, and then the impedance matching circuit provides impedance matching for the RF power output by the RF power generating circuit, so as to adapt to various process environments with relatively constant impedance matching amounts, reduce the time for impedance matching between the RF power generating circuit and the reaction chamber, and thus improve the process efficiency. For a process environment with a large variation in impedance matching amount, the switching circuit can be set to shield the impedance matching circuit, and a conventional matcher can be used to perform a large range of impedance matching operations or directly output RF power to adapt to a process environment with a large variation in impedance matching amount. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a structural schematic diagram of the radio frequency power supply system provided in the first embodiment of the present application.

[0033] Figure 2 It is a structural schematic diagram of an impedance matching circuit provided in one embodiment of the present application.

[0034] Figure 3 It is a structural schematic diagram of the radio frequency power generating circuit provided in the first embodiment of the present application.

[0035] Figure 4 It is a structural schematic diagram of the radio frequency power generating circuit provided in the second embodiment of the present application.

[0036] Figure 5 It is a schematic diagram of the structure of the radio frequency power supply system provided in the second embodiment of the present application. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0038] It should be noted that the terms "first", "second", "third", "fourth", etc. (if any) in the specification of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or circuits is not necessarily limited to those steps or circuits clearly listed, but may include other steps or circuits that are not clearly listed or inherent to these processes, methods, products or devices.

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0040] The RF power system is a device used to generate RF power signals. It is a core component of semiconductor process equipment. All equipment that generates plasma for material processing requires RF power systems to provide energy. Process manufacturing equipment for integrated circuits, solar cells, and LEDs (Light Emitting Diodes), such as etchers, PVD (Physical Vapor Deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition), ALD (Atomic Layer Deposition), and other equipment are all equipped with RF power systems with different power specifications.

[0041] The RF power supply system used for plasma process generally includes an RF power generation circuit and an impedance matcher. The RF power generation circuit is used to generate an RF signal with a certain power level and a certain frequency, while the impedance matcher is placed between the plasma reaction chamber and the RF power generator to match the load impedance of the plasma reaction chamber with the output impedance of the RF power generation circuit, so as to well transmit the power generated by the RF power generator to the plasma chamber, thereby exciting a sufficient amount of plasma to achieve the process requirements.

[0042] However, in the related art, when the RF power supply system works in a process environment where the impedance matching amount is relatively constant or the impedance matching amount varies greatly, a conventional impedance matcher is used to perform a large range of impedance matching operations. For a process environment where the impedance matching amount is relatively constant, the use of a conventional impedance matcher not only prolongs the impedance matching time, but also easily reduces the process efficiency, thereby hindering the process.

[0043] Based on this, the present application provides a radio frequency power supply system and semiconductor process equipment, which realizes multi-stage impedance matching through a multi-stage impedance matching structure to adapt to various process environments with relatively balanced impedance matching amounts, thereby reducing the time for impedance matching between the radio frequency power generating circuit and the reaction chamber.

[0044] See also Figure 1 In one embodiment, the radio frequency power supply system includes a radio frequency power generating circuit 1, a switching circuit 2 and an impedance matching circuit 3.

[0045] The RF power generating circuit 1 is used to connect to an external AC voltage source and output RF power. Specifically, the RF power generating circuit 1 is powered on after connecting to an external AC voltage source, and outputs RF power with a certain power level and a certain frequency to the switching circuit 2.

[0046] The switching circuit 2 is connected to the output end of the RF power generating circuit 1. The switching circuit 2 has a first output branch and a second output branch, and can output the RF power output by the RF power generating circuit 1 through the first output branch or the second output branch. Specifically, the switching circuit 2 has two power output modes, one of which is to output the RF power output by the RF power generating circuit 1 through the first output branch, and the other is to output the RF power output by the RF power generating circuit 1 through the second output branch. When the switching circuit 2 outputs the RF power output by the RF power generating circuit 1 through its first output branch, the impedance matching circuit 3 is connected to the RF power output by the RF power generating circuit 1.

[0047] The impedance matching circuit 3 is used to provide impedance matching for the RF power output by the RF power generating circuit 1. The impedance matching circuit 3 has at least two groups of impedance matching branches, each impedance matching branch is respectively connected to the output end of the first output branch, and the impedance values ​​of each impedance matching branch are different from each other. Specifically, the impedance matching branch is connected between the RF power generating circuit 1 and the external reaction chamber to provide impedance matching for the communication path, and each anti-matching branch has a different impedance value. By switching on the impedance matching branch, the matching efficiency output by the impedance matching circuit 3 can be switched. By detecting the matching efficiency output by the impedance matching circuit 3 when each impedance matching branch is turned on separately, the impedance matching branch that can make the RF power generating circuit 1 and the external reaction chamber in the optimal matching state can be identified, and then the impedance matching branch is maintained to provide impedance matching for the RF power output by the RF power generating circuit 1.

[0048] In actual application, the RF power generating circuit 1 outputs RF power with a certain power level and a certain frequency to the switching circuit 2. If the RF power supply system works in a process environment with a relatively constant impedance matching amount, the switching circuit 2 is set to output the RF power output by the RF power generating circuit 1 through the first output branch, and then the impedance matching circuit 3 is used to provide impedance matching for the RF power output by the RF power generating circuit 1. By realizing multi-stage impedance matching in a multi-stage impedance matching structure, it can adapt to various process environments with relatively constant impedance matching amounts, and can provide a technical effect of fast matching for process environments with relatively constant impedance matching amounts. If the RF power supply system works in a process environment with a large change in impedance matching amount, the switching circuit 2 is set to output the RF power output by the RF power generating circuit 1 through the second output branch, and then the impedance matching circuit 3 is shielded. The output end of the second output branch can be connected to a conventional matcher, and a conventional matcher is used to perform a large range of impedance matching operations to adapt to process environments with large changes in impedance matching amounts. In some embodiments, the output end of the second output branch can also be directly connected to an external reaction chamber.

[0049] In some embodiments, specifically, the input end of the first output branch is connected to the output end of the RF power generating circuit 1, the output end of the first output branch is connected to the output end of the impedance matching circuit 3, the input end of the second output branch is connected to the output end of the RF power generating circuit 1, and the output end of the second output branch is used to connect to an external reaction chamber or an external matcher.

[0050] See also Figure 2In one embodiment, the impedance matching circuit 3 includes a multi-segment inductor 31, a switch device 32 and a resonant subcircuit 33. The number of the impedance coil segments is at least two groups, the number of the switch devices 32 is the same as the number of the impedance coil segments, the first end of an impedance coil segment is connected to the second end of another impedance coil segment or to the first end of the resonant subcircuit 33, the first end of a switch device 32 is connected to the second end of an impedance coil segment, and the second end of a switch device 32 is connected to the second end of the resonant subcircuit 33.

[0051] Specifically, the multi-segment inductor 31 is an isolated inductor structure, the primary side coil of the multi-segment inductor 31 is connected to the output end of the switching circuit 2, and the secondary side coil of the multi-segment inductor 31 is composed of at least two groups of impedance coil segments, each impedance coil segment has a certain amount of impedance, and each impedance coil segment, the switching device 32 and the resonant subcircuit 33 are connected in the above manner, so that a group of impedance matching branches are formed by a group of switching devices 32 and at least one group of impedance coil segments. For example, the first group of impedance matching branches may be composed of the first group of switching devices 32 and the first group of impedance coil segments (the first end of the first group of impedance coil segments is connected to the first end of the resonant subcircuit 33), the second group of impedance matching branches may be composed of the second group of switching devices 32, the first group of impedance coil segments and the second group of impedance coil segments (the first end of the second group of impedance coil segments is connected to the second end of the first group of impedance coil segments), the third group of impedance matching branches may be composed of the third group of switching devices 32, the first group of impedance coil segments, the second group of impedance coil segments and the third group of impedance coil segments (the first end of the third group of impedance coil segments is connected to the second end of the second group of impedance coil segments), and so on. The last group of impedance matching branches may be composed of the last group of switching devices 32 and all impedance coil segments, so that each group of impedance matching branches has a different impedance. In actual use, one group of switch devices 32 is closed to turn on the impedance matching branch corresponding to the switch device 32, and the resonant subcircuit 33 is connected to the turned-on impedance matching branch. The impedance matching branch provides impedance matching to the external reaction chamber through the resonant subcircuit 33. The resonant subcircuit 33 converts the electric field energy in the capacitor and the magnetic field energy in the inductor, so that the sum of the electric field energy and the magnetic field energy remains unchanged at all times. The RF power generating circuit 1 does not need to convert energy back and forth with the capacitor or inductor, but only needs to supply the electric energy consumed by the external reaction chamber. For example, when only the first group of switch devices 32 is closed, the first group of impedance matching branches is turned on, that is, the first group of impedance coil segments are connected to the resonant subcircuit 33, and the first group of impedance coil segments provide impedance matching to the external reaction chamber through the resonant subcircuit 33. When only the second group of switch devices 32 is closed, the second group of impedance matching branches is turned on, that is, the second group of impedance coil segments and the second group of impedance coil segments are connected to the resonant subcircuit 33, and the second group of impedance coil segments and the second group of impedance coil segments jointly provide impedance matching to the external reaction chamber through the resonant subcircuit 33.

[0052] More specifically, each group of impedance coil segments constitutes the secondary side of the multi-segment inductor 31, the first end of the i-th impedance coil segment is directly connected to the first end of the resonant sub-circuit 33 (when i=1) or is connected to the first end of the resonant sub-circuit 33 through the i-1, i-2, ..., 1 impedance coil segments in sequence (when i>1), so as to connect to the external reaction chamber through the first end of the resonant sub-circuit 33, the second end of the i-th impedance coil segment is respectively connected to the first end of the i+1 impedance coil segment and the first end of the i-th switch device 32, the second end of the i-th switch device 32 is connected to the external reaction chamber through the second end of the resonant sub-circuit 33, and when the i-th switch device 32 is closed, the i-th group of impedance matching branches (composed of the i-th switch device 32 and the i, i-1, i-2, ..., 1 impedance coil segments) is connected to the resonant sub-circuit 33. Exemplarily, the first end of the first group of impedance coil segments is connected to the external reaction chamber through the first end of the resonant subcircuit 33, the second end of the first group of impedance coil segments is respectively connected to the first end of the second group of impedance coil segments and the first end of the first group of switching devices 32, the second end of the first group of switching devices 32 is connected to the external reaction chamber through the second end of the resonant subcircuit 33, the first end of the second group of impedance coil segments is connected to the first end of the resonant subcircuit 33 through the first group of impedance coil segments to indirectly connect to the external reaction chamber, the second end of the second group of impedance coil segments is respectively connected to the first end of the third group of impedance coil segments and the first end of the second group of switching devices 32, the second end of the second group of switching devices 32 is connected to the external reaction chamber through the second end of the resonant subcircuit 33, and so on, the first end of the last group of impedance coil segments is connected to the first end of the resonant subcircuit 33 through all other impedance coil segments to indirectly connect to the external reaction chamber, the second end of the last group of impedance coil segments is connected to the first end of the last group of switching devices 32, and the second end of the last group of switching devices 32 is connected to the external reaction chamber through the second end of the resonant subcircuit 33. The resonant subcircuit 33 includes a first inductor L1, a first capacitor C1 and a second capacitor C2, one end of the first capacitor C1 is connected to the first end of the first group of impedance coil segments to serve as the first end of the resonant subcircuit 33, one end of the second capacitor C2 is connected to the second end of each switching device 32 to serve as the second end of the resonant subcircuit 33, the other end of the second capacitor C2 is connected to one end of the first inductor L1, and the other end of the first inductor L1 and the other end of the first capacitor C1 are respectively connected to an external reaction chamber, wherein the first capacitor C1 and the second capacitor C2 are used to provide electric field energy, and the first inductor L1 is used to provide magnetic field energy.

[0053] In some embodiments, the switch device 32 is a selector, a relay, a transistor and / or a MOS tube.

[0054] In some embodiments, the impedance value of each impedance matching branch increases monotonically according to a preset order. For example, seven groups of impedance matching branches may be set, and the impedance values ​​of the first to seventh groups of impedance matching branches are 10 ohm, 20 ohm, 30 ohm, 40 ohm, 50 ohm, 60 ohm and 70 ohm respectively.

[0055] See also Figure 3 and Figure 4 In a more specific embodiment, the RF power generation circuit 1 includes a rectifier circuit 11, a first filter circuit 12, an inverter circuit 13, a voltage conversion circuit 14, and a second filter circuit 15. The rectifier circuit 11 is used to access external AC power and rectify it into DC power, the first filter circuit 12 is connected to the output end of the rectifier circuit 11, and is used to filter the DC power obtained by rectification and obtain the filtered DC power, the inverter circuit 13 is connected to the output end of the first filter circuit 12, and is used to invert the filtered DC power into AC power, the voltage conversion circuit 14 is connected to the output end of the inverter circuit 13, and is used to perform voltage conversion on the AC power obtained by inversion, and the second filter circuit 15 is connected to the output end of the voltage conversion circuit 14, and is used to filter the AC power obtained by voltage conversion and obtain RF power.

[0056] Specifically, the rectifier circuit 11 is connected to the external AC power and rectifies it into DC power. The external AC power can be single-phase input AC power (SINGLE PHASE) or three-phase input AC power (THREEPHASE). The DC power obtained after the rectification process is filtered by the first filtering subcircuit 12. The first filtering subcircuit 12 filters out the AC interference in the DC power. The DC power filtered by the first filtering subcircuit 12 is input to the inverter subcircuit 13 and inverted into AC power. The voltage conversion subcircuit 14 performs voltage conversion (boost processing or buck processing) on ​​the AC power obtained by the inverter processing to obtain the AC power after voltage conversion. The AC power after voltage conversion is filtered by the second filtering subcircuit 15. The second filtering subcircuit 15 filters out the interference signal in the voltage conversion. The AC power output after filtering by the second filtering subcircuit 15 is the RF power.

[0057] like Figure 3 As shown, in this embodiment, the rectifier circuit 11 is used to access the AC power of the single-phase input. The rectifier circuit 11 includes a first diode D1, a second diode D2, a third diode D3 and a fourth diode D4. The first diode D1, the second diode D2, the third diode D3 and the fourth diode D4 constitute a bridge rectifier structure for accessing the single-phase input. The bridge rectifier structure outputs DC power through a bus.

[0058] like Figure 4As shown, in this embodiment, the rectifier circuit 11 is used to access the three-phase input AC power, and the rectifier circuit 11 includes a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5 and a sixth diode D6. The first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth diode D5 and the sixth diode D6 constitute a bridge rectifier structure for accessing the three-phase input, and the bridge rectifier structure outputs DC power through a bus.

[0059] The first filter subcircuit 12 includes a second inductor L2 and a third capacitor C3. The second inductor L2 is connected in series between the rectifier circuit 11 and the inverter circuit 13. The third capacitor C3 is connected across the two ends of the rectifier circuit 11. The second inductor L2 serves as a filter inductor, and the third capacitor C3 serves as a filter capacitor. The second inductor L2 and the third capacitor C3 are combined to form a composite filter structure.

[0060] The inverter sub-circuit 13 includes a first switch tube Q1, a second switch tube Q2, a third switch tube Q3 and a fourth switch tube Q4, which form an H-bridge inverter structure.

[0061] The voltage conversion sub-circuit 14 includes a transformer T1 and a fourth capacitor C4. One end of the primary side of the transformer T1 is connected to the first switch tube Q1 and the second switch tube Q2 through the fourth capacitor C4. The other end of the primary side of the transformer T1 is connected to the third switch tube Q3 and the fourth switch tube Q4. The secondary side of the transformer T1 is connected to the second filtering sub-circuit 15.

[0062] The second filtering subcircuit 15 includes a third inductor L3 and a fifth capacitor C5. The third inductor L3 is connected in series between the secondary side of the transformer T1 and the switching circuit 2. The fifth capacitor C5 is connected across the two ends of the secondary side of the transformer T1. The third inductor L3 serves as a filtering inductor, and the fifth capacitor C5 serves as a filtering capacitor. The third inductor L3 and the fifth capacitor C5 together constitute a composite filtering structure.

[0063] See also Figure 5 The RF power supply system further includes a power regulating circuit 4. The power regulating circuit 4 is connected to the output end of the RF power generating circuit 1, and is used to collect the RF power output by the RF power generating circuit 1 and output a first regulating signal, so that the RF power generating circuit 1 outputs the RF power corresponding to the first regulating signal.

[0064] Specifically, the power regulating circuit 4 collects the RF power output by the RF power generating circuit 1, and outputs a first regulating signal according to the value of the RF power. When the value of the RF power is greater than the preset upper power limit threshold, the power regulating circuit 4 outputs the first regulating signal to reduce the RF power. When the value of the RF power is less than the preset lower power limit threshold, the power regulating circuit 4 outputs the first regulating signal to increase the RF power.

[0065] More specifically, the power regulation circuit 4 includes a power sensor 41, an analog-to-digital converter 42 and a power regulation module 43. The power sensor 41 is connected to the output end of the RF power generation circuit 1, the analog-to-digital converter 42 is connected to the output end of the power sensor 41, and the power regulation module 43 is connected to the output end of the analog-to-digital converter 42, and is used to output a corresponding regulation signal according to the collected RF power.

[0066] In actual application, the power sensor 41 collects the power output from the output end of the RF power generating circuit 1 to obtain a collection signal in the form of voltage and current. The analog-to-digital converter 42 obtains the collection signal of the power sensor 41, converts the collection signal into an analog-to-digital signal, and obtains a digital signal. The power adjustment module 43 receives the digital signal, determines the RF power currently output by the RF power generating circuit 1 according to the specific value of the digital signal, and then outputs a corresponding first adjustment signal to the RF power generating circuit 1 according to the digital signal, so that the RF power generating circuit 1 outputs the RF power corresponding to the first adjustment signal.

[0067] More specifically, the power regulating module 43 is connected to the impedance matching circuit 3, and is used for collecting the matching power output by the impedance matching circuit 3 and outputting a second regulating signal to turn on the impedance matching branch corresponding to the second regulating signal.

[0068] In actual application, the power regulating module 43 performs frequency sweeping on the matching power signal output by the impedance matching circuit 3. Frequency sweeping is to obtain the matching power output by the impedance matching circuit 3, which can be acquired by a corresponding sensor to acquire the matching power output by the impedance matching circuit 3, and then acquire the acquisition signal of the sensor to acquire the matching power output by the impedance matching circuit 3, and compare the acquired matching power output by the impedance matching circuit 3 with the preset matching power interval. When the acquired matching power is not in the matching power interval, the power regulating module 43 outputs a second adjustment signal to control the impedance matching branch to switch the impedance matching branch to conduct until the acquired matching power is in the matching power interval. If all impedance matching branches cannot provide impedance matching that meets the requirements, an alarm signal is output or the impedance matching circuit 3 is controlled to stop working.

[0069] An embodiment of the present application also provides a semiconductor process equipment, which includes the above-mentioned RF power supply system. The specific structure of the RF power supply system refers to the above-mentioned embodiment. Since the semiconductor process equipment provided by the embodiment of the present application adopts all the technical solutions of all the above-mentioned embodiments, it at least has all the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be repeated here one by one.

[0070] In summary, the RF power supply system and semiconductor process equipment provided in the embodiments of the present application receive the RF power output by the RF power generating circuit and the impedance matching circuit of the multi-stage impedance matching structure through the switching circuit. For a process environment with a relatively constant impedance matching amount, the switching circuit can be set to output the RF power to the impedance matching circuit, and then the impedance matching circuit provides impedance matching for the RF power output by the RF power generating circuit to adapt to various process environments with relatively constant impedance matching amounts, reduce the time for impedance matching between the RF power generating circuit and the reaction chamber, and thus improve the process efficiency. For a process environment with a large change in impedance matching amount, the switching circuit can be set to shield the impedance matching circuit, and a conventional matcher can be used to perform a large range of impedance matching operations or directly output RF power to adapt to a process environment with a large change in impedance matching amount.

[0071] It should be understood that in the present application, "at least one (item)" means one or more, and "plurality" means two or more. "And / or" is used to describe the association relationship of associated objects, indicating that three relationships may exist. For example, "A and / or B" can mean: only A exists, only B exists, and A and B exist at the same time, where A and B can be singular or plural. The character " / " generally indicates that the objects associated before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, "a and b", "a and c", "b and c", or "a and b and c", where a, b, c can be single or multiple.

[0072] The preferred embodiments of the present invention are described above with reference to the accompanying drawings, but the scope of the rights of the present invention is not limited thereto. Any modification, equivalent substitution and improvement made by a person skilled in the art without departing from the scope and essence of the present invention should be within the scope of the rights of the present invention.

Claims

1. A radio frequency power supply system, characterized in that: include: A radio frequency power generating circuit, used for connecting to an external AC voltage source and outputting radio frequency power; a switching circuit connected to the output end of the radio frequency power generating circuit, having a first output branch and a second output branch, and capable of outputting the radio frequency power output by the radio frequency power generating circuit through the first output branch or the second output branch; as well as The impedance matching circuit has at least two groups of impedance matching branches, which are used to provide impedance matching for the RF power output by the RF power generating circuit; each of the impedance matching branches is respectively connected to the output end of the first output branch, and the impedance values ​​of each of the impedance matching branches are different from each other.

2. The radio frequency power supply system according to claim 1, characterized in that: The impedance matching circuit comprises: Resonator circuit; A multi-segment inductor having at least two groups of impedance coil segments, wherein a first end of one impedance coil segment is connected to a second end of another impedance coil segment or to a first end of the resonant subcircuit; Switching devices, the number of the switching devices is the same as the number of the impedance coil segments, a first end of the switching device is connected to a second end of the impedance coil segment, and a second end of the switching device is connected to the second end of the resonant subcircuit.

3. The radio frequency power supply system according to claim 2, characterized in that: The switch device is selected from a path selector, a relay, a transistor and / or a MOS tube.

4. The radio frequency power supply system according to any one of claims 1 to 3, characterized in that: The impedance values ​​of the impedance matching branches increase monotonically according to a preset order.

5. The radio frequency power supply system according to claim 1, characterized in that: The radio frequency power generating circuit comprises: A rectifier circuit, used for receiving external AC power and rectifying it into DC power; A first filtering subcircuit, connected to the output end of the rectifier subcircuit, for filtering the rectified DC power to obtain filtered DC power; an inverter subcircuit, connected to the output end of the first filter subcircuit, and used for inverting the filtered DC power into AC power; a voltage conversion subcircuit, connected to the output end of the inverter subcircuit, for performing voltage conversion on the AC power obtained by inversion; and The second filtering subcircuit is connected to the output end of the voltage conversion subcircuit and is used for filtering the AC power obtained by voltage conversion to obtain radio frequency power.

6. The radio frequency power supply system according to claim 1, characterized in that: The input end of the first output branch is connected to the output end of the RF power generating circuit, and the output end of the first output branch is connected to the output end of the impedance matching circuit; The input end of the second output branch is connected to the output end of the radio frequency power generating circuit, and the output end of the second output branch is used to connect to an external reaction chamber or an external matching device.

7. The radio frequency power supply system according to claim 1, characterized in that: The radio frequency power supply system also includes a power regulation circuit; The power regulating circuit is connected to the output end of the RF power generating circuit, and is used to collect the RF power output by the RF power generating circuit and output a first regulating signal so that the RF power generating circuit outputs the RF power corresponding to the first regulating signal.

8. The radio frequency power supply system according to claim 7, characterized in that: The power regulation circuit comprises: A power sensor connected to the output end of the radio frequency power generating circuit; an analog-to-digital converter connected to an output end of the power sensor; and The power regulation module is connected to the output end of the analog-to-digital converter and is used to output a corresponding regulation signal according to the collected radio frequency power.

9. The radio frequency power supply system according to claim 8, characterized in that: The power adjustment module is connected to the impedance matching circuit, and is used to collect the matching power output by the impedance matching circuit and output a second adjustment signal to turn on the impedance matching branch corresponding to the second adjustment signal.

10. A semiconductor process equipment, characterized in that: A radio frequency power supply system comprising any one of claims 1 to 9.

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