Atomic layer deposition device

Abstract

The utility model provides an atomic layer deposition device which comprises a reactor with a reaction chamber, one end of the reactor is provided with an air inlet, the other end of the reactor is provided with an air outlet, and the air inlet and the air outlet are communicated with the reaction chamber; the support frame is mounted in the reaction chamber; and the grid is mounted in the reaction chamber and is positioned between the air inlet and the support frame. According to the invention, the support frame and the grating are respectively arranged in the reaction chamber, and the support frame can support the to-be-coated part. A precursor gas material entering from the gas inlet can be blocked and diffused by the grating and then uniformly enters the reaction chamber, so that the precursor gas material can be fully and uniformly diffused to the whole reaction chamber, and most of the precursor gas material can be in contact with the surface of a to-be-coated part, so that the uniformity of a film layer is effectively improved, and the service life of the film layer is prolonged. The defect that the film layer uniformity is poor due to the fact that the precursor gas material is not diffused and washed out is effectively avoided, and the performance of the perovskite-crystalline silicon laminated solar cell can be improved.

Description

Technical Field

[0001] The present application belongs to the technical field of solar cells, and more specifically, to an atomic layer deposition device. Background Art

[0002] Perovskite-crystalline silicon tandem solar cells are currently the most widely used solar cells due to their high photoelectric conversion efficiency and stability. In the preparation process of perovskite-crystalline silicon tandem solar cells, atomic layer deposition technology is usually used to prepare the electron transport layer. Atomic layer deposition technology is a technology that chemically adsorbs and reacts on the deposition substrate to form a deposited film by alternately passing gas phase precursor pulses into the reactor.

[0003] However, in the preparation process of the electron transport layer, due to the large atomic deposition coating chamber, the precursor gas material cannot diffuse during atomic deposition. In the absence of diffusion, most of the precursor gas material is flushed out of the reaction chamber by the inert gas and does not come into contact with the large-area crystalline silicon surface, resulting in poor uniformity of the large-area crystalline silicon deposition film thickness, thereby affecting the performance of the perovskite-crystalline silicon stacked solar cells. Utility Model Content

[0004] The purpose of the embodiments of the present application is to provide an atomic layer deposition device to solve the problem existing in the related art: the precursor gas material cannot diffuse during atomic deposition, resulting in poor uniformity of large-area crystalline silicon deposition film thickness, which affects the performance of perovskite-crystalline silicon stacked solar cells.

[0005] To achieve the above purpose, the technical solution adopted in the embodiment of the present application is:

[0006] An atomic layer deposition device is provided, comprising:

[0007] A reactor having a reaction chamber, wherein an air inlet is provided at one end of the reactor and an exhaust port is provided at the other end of the reactor, and the air inlet and the exhaust port are respectively connected to the reaction chamber;

[0008] A support frame, installed in the reaction chamber, for supporting the piece to be coated;

[0009] A grid is installed in the reaction chamber and is located between the air inlet and the support frame.

[0010] In one embodiment, the support frame includes two oppositely disposed support side plates and a support flat plate connecting the two support side plates.

[0011] In one embodiment, first mounting holes are respectively provided at both ends of the support plate, and second mounting holes are provided on each support side plate at positions corresponding to the first mounting holes, and fasteners that cooperate and lock with the first mounting holes are installed in each second mounting hole.

[0012] In one embodiment, there are multiple supporting plates, and the multiple supporting plates are arranged in parallel and at intervals along the first direction.

[0013] In one embodiment, the grille includes a frame and a plurality of blocking bars installed on the frame in parallel and at intervals along the second direction.

[0014] In one embodiment, the grille further comprises a connecting bar connecting a plurality of the blocking bars.

[0015] In one embodiment, the connecting strip divides the area enclosed by two adjacent blocking strips into two air permeable areas, and the areas of the two air permeable areas are equal.

[0016] In one embodiment, the first direction is perpendicular to the second direction.

[0017] In one embodiment, the reactor includes a reaction section, an exhaust section and a connecting section connecting the reaction section and the exhaust section, the support frame and the grid are respectively arranged in the reaction section, the reaction section is provided with the air inlet; the exhaust section is provided with the exhaust port.

[0018] In one embodiment, a cross-sectional area of ​​the connecting section gradually decreases along a direction from the reaction section to the exhaust section.

[0019] The atomic layer deposition device provided by the embodiment of the present application has at least the following beneficial effects: the present application sets a support frame and a grid in the reaction chamber respectively, and the support frame can support the piece to be coated. The precursor gas material entering from the air inlet can be first blocked by the grid and diffused before entering the reaction chamber uniformly, thereby ensuring that the precursor gas material can be fully and evenly diffused throughout the reaction chamber, and most of the precursor gas material can contact the surface of the piece to be coated, thereby effectively improving the uniformity of the film layer, effectively avoiding the defect of poor uniformity of the film layer caused by the precursor gas material not being able to diffuse and being washed out, and helping to improve the performance of the perovskite-crystalline silicon stacked solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or exemplary technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 A side view of an atomic layer deposition apparatus provided in an embodiment of the present application;

[0022] Figure 2 A front view of the support frame provided in an embodiment of the present application;

[0023] Figure 3 This is a front view of the grille provided in an embodiment of the present application.

[0024] Among them, the main marks of the drawings in the figure are:

[0025] 1. Reactor; 10. Reaction chamber; 11. Air inlet; 12. Exhaust port; 13. Reaction section; 14. Exhaust section; 15. Connection section;

[0026] 2. Support frame; 21. Support side plate; 22. Support plate; 23. Fastener;

[0027] 3. Grille; 31. Frame; 32. Baffle bar; 33. Connecting bar; 34. Ventilation area. DETAILED DESCRIPTION

[0028] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0029] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0030] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined. "Several" means one or more, unless otherwise clearly and specifically defined.

[0031] In the description of the present application, it should be understood that the terms "center", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0032] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0033] Reference throughout the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, when the phrases "in one embodiment" or "in some embodiments" appear in various places throughout the specification, not all references are to the same embodiment. Furthermore, in one or more embodiments, the particular features, structures, or characteristics may be combined in any suitable manner.

[0034] For the convenience of description, the three mutually perpendicular coordinate axes in space are defined as X-axis, Y-axis and Z-axis. Meanwhile, the direction along the X-axis is longitudinal, the direction along the Y-axis is transverse, and the direction along the Z-axis is vertical. The X-axis and the Y-axis are two mutually perpendicular coordinate axes in the same horizontal plane, and the Z-axis is a coordinate axis in the vertical direction. The X-axis, the Y-axis and the Z-axis are located in three mutually perpendicular planes in space, namely the XY plane, the YZ plane and the XZ plane. The XY plane is a horizontal plane, the XZ plane and the YZ plane are both vertical planes, and the XZ plane is perpendicular to the YZ plane. The three axes in space are the X-axis, the Y-axis and the Z-axis. Movement along the three axes in space refers to movement along the three mutually perpendicular axes in space, specifically movement along the X-axis, the Y-axis and the Z-axis in space. Plane movement refers to movement in the XY plane.

[0035] See also Figure 1, the atomic layer deposition device provided in the embodiment of the present application is now described. The atomic layer deposition device includes a reactor 1 having a reaction chamber 10, a support frame 2 for supporting a piece to be coated, and a grid 3 for diffusing a precursor gas material. Optionally, an air inlet 11 is provided at one end of the reactor 1, and an exhaust port 12 is provided at the other end of the reactor 1, and the air inlet 11 and the exhaust port 12 are respectively connected to the reaction chamber 10. The precursor gas material entering from the air inlet 11 can fill the reaction chamber 10 and be discharged from the exhaust port 12. The support frame 2 can be installed in the reaction chamber 10, and the piece to be coated can be installed on the support frame 2 to realize the coating operation. Among them, the piece to be coated can be a crystalline silicon bottom cell of a perovskite-crystalline silicon stacked solar cell to prepare an electron transport layer. The grid 3 is installed in the reaction chamber 10, and the grid 3 is located between the air inlet 11 and the support frame 2, that is, the grid 3 and the support frame 2 are arranged in sequence along the direction from the air inlet 11 to the exhaust port 12.

[0036] In this structure, the present application sets a support frame 2 and a grid 3 in the reaction chamber 10, respectively, and the support frame 2 can support the piece to be coated. The precursor gas material entering from the air inlet 11 can be first blocked and diffused by the grid 3 and then uniformly enter the reaction chamber 10, thereby ensuring that the precursor gas material can be fully and uniformly diffused to the entire reaction chamber 10, and most of the precursor gas material can contact the surface of the piece to be coated, thereby effectively improving the uniformity of the film layer, effectively avoiding the defect of poor uniformity of the film layer caused by the precursor gas material not being able to diffuse and being washed out, and helping to improve the performance of the perovskite-crystalline silicon stacked solar cell.

[0037] In one embodiment, see Figure 2 As a specific implementation of the atomic layer deposition device provided in an embodiment of the present application, the support frame 2 includes two oppositely arranged support side plates 21 and a support flat plate 22 connecting the two support side plates 21. Optionally, the two support side plates 21 are arranged in parallel and spaced apart. The flow direction of the precursor gas material from the air inlet 11 to the exhaust port 12 is the reference direction, and the support flat plate 22 is horizontally arranged along the reference direction. With this structure, the support of the film-coated part can be achieved through the support flat plate 22; the support of the support flat plate 22 can be achieved through the two support side plates 21.

[0038] In one embodiment, see Figure 1 and Figure 2As a specific implementation of the atomic layer deposition device provided in the embodiment of the present application, first mounting holes (not shown) are respectively provided at both ends of the support plate 22, and second mounting holes (not shown) are provided at positions corresponding to the corresponding first mounting holes on each support side plate 21, and fasteners 23 that cooperate and lock with the corresponding first mounting holes are installed in each second mounting hole. Optionally, two first mounting holes are respectively provided at both ends of the support plate 22, and two second mounting holes are provided on each support side plate 21, that is, the two ends of the support plate 22 are respectively connected and fixed to the two support side plates 21 by two fasteners 23. Among them, the fasteners 23 can be screws, bolts, etc. In this structure, the connection and fixation between the support plate 22 and the support side plates 21 are realized by the fasteners 23, which facilitates the detachability between the support plate 22 and the support side plates 21.

[0039] In one embodiment, see Figure 2 As a specific implementation of the atomic layer deposition device provided in the embodiment of the present application, there are multiple supporting plates 22, and the multiple supporting plates 22 are arranged in parallel and spaced apart along the first direction. Optionally, the first direction may be Figure 2 In the Z-axis direction. This structure can support multiple parts to be coated through multiple supporting plates 22, so that the coating operation can be completed at one time, thereby improving the coating efficiency. Among them, the distance between two adjacent supporting plates 22 remains the same, so as to ensure the uniformity of the film layer of each part to be coated.

[0040] In one embodiment, see Figure 3 As a specific implementation of the atomic layer deposition device provided in the embodiment of the present application, the grid 3 includes a frame 31 and a plurality of baffles 32 installed on the frame 31 in parallel and spaced along the second direction. Optionally, the second direction is Figure 3 In this structure, the plurality of baffles 32 can evenly separate the precursor gas material entering from the gas inlet 11 and discharge it into the reaction chamber 10, which helps to improve the diffusion uniformity of the precursor gas material in the reaction chamber 10, thereby improving the uniformity of the film layer.

[0041] In one embodiment, see Figure 3 As a specific implementation of the atomic layer deposition device provided in the embodiment of the present application, the grid 3 also includes a connecting bar 33 connecting the plurality of blocking bars 32. Optionally, the connecting bar 33 can be arranged in the middle of the frame 31, and the length direction of the connecting bar 33 extends along the Y-axis direction. In this structure, the overall strength of the grid 3 can be increased by the connecting bar 33.

[0042] In one embodiment, see Figure 3As a specific implementation of the atomic layer deposition device provided in the embodiment of the present application, the connecting bar 33 divides the area enclosed by two adjacent baffles 32 into two permeable areas 34, and the areas of the two permeable areas 34 are equal. This structure can ensure that the permeability of the upper permeable area 34 and the lower permeable area 34 remains the same, ensuring the uniformity of the precursor gas materials above and below.

[0043] In one embodiment, the number of the supporting plates 22 can be three, the number of the connecting strips 33 can be one, and the supporting plate 22 and the connecting strips 33 located in the middle are located in the same plane. This structure can prevent the connecting strips 33 from blocking the workpiece to be coated supported on the supporting plate 22. Of course, in other embodiments, the number of supporting plates 22 and connecting strips 33 can be adjusted according to actual needs, and is not the only limitation here.

[0044] In one embodiment, as a specific implementation of the atomic layer deposition device provided in the embodiment of the present application, the first direction is perpendicular to the second direction. Optionally, the first direction may be the Z-axis direction, and the second direction may be the Y-axis direction. In this structure, the first direction is set perpendicular to the second direction, and the precursor gas material can be blocked from diffusion by a plurality of baffles 32 and the support plate 22, which helps to improve the homogenization of the precursor gas material.

[0045] In one embodiment, see Figure 1 As a specific implementation of the atomic layer deposition device provided in an embodiment of the present application, the reactor 1 includes a reaction section 13, an exhaust section 14 and a connecting section 15 connecting the reaction section 13 and the exhaust section 14. The support frame 2 and the grid 3 are respectively arranged in the reaction section 13. The reaction section 13 is provided with an air inlet 11; the exhaust section 14 is provided with an exhaust port 12. Optionally, the air inlet 11 can be opened at the top of the reaction section 13. The length of the reaction section 13 along the X-axis direction is the largest. In this structure, the air inlet 11 is opened on the reaction section 13, and the exhaust port 12 is opened on the exhaust section 14, so as to realize the separation of air intake and exhaust, which can effectively prolong the reaction time.

[0046] In one embodiment, see Figure 1 As a specific implementation of the atomic layer deposition device provided in an embodiment of the present application, the cross-sectional area of ​​the connecting section 15 gradually decreases along the direction from the reaction section 13 to the exhaust section 14. Optionally, the cross-sectional area of ​​the reaction section 13 is larger than the cross-sectional area of ​​the exhaust section 14. The cross-sectional area here can be understood as the area along the Y-axis direction. This structure helps to improve the exhaust efficiency. Among them, the exhaust port 12 can be externally connected to a vacuum pump to further improve the exhaust efficiency.

[0047] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. An atomic layer deposition device, characterized in that: include: A reactor having a reaction chamber, wherein an air inlet is provided at one end of the reactor and an exhaust port is provided at the other end of the reactor, and the air inlet and the exhaust port are respectively connected to the reaction chamber; A support frame, installed in the reaction chamber, for supporting the piece to be coated; A grid is installed in the reaction chamber and is located between the air inlet and the support frame.

2. The atomic layer deposition apparatus according to claim 1, wherein: The support frame includes two supporting side plates arranged opposite to each other and a supporting flat plate connecting the two supporting side plates.

3. The atomic layer deposition apparatus according to claim 2, wherein: The two ends of the support plate are respectively provided with first mounting holes, and the positions of the support side plates corresponding to the corresponding first mounting holes are provided with second mounting holes, and each of the second mounting holes is provided with a fastener that cooperates and locks with the corresponding first mounting hole.

4. The atomic layer deposition apparatus according to claim 2, wherein: There are multiple supporting plates, and the multiple supporting plates are arranged in parallel and at intervals along the first direction.

5. The atomic layer deposition apparatus according to claim 4, wherein: The grille includes a frame body and a plurality of blocking bars installed on the frame body in parallel and at intervals along a second direction.

6. The atomic layer deposition apparatus according to claim 5, wherein: The grille also includes a connecting bar connecting a plurality of the blocking bars.

7. The atomic layer deposition apparatus according to claim 6, wherein: The connecting strip divides the area enclosed by two adjacent blocking strips into two air-permeable areas, and the areas of the two air-permeable areas are equal.

8. The atomic layer deposition apparatus according to claim 5, wherein: The first direction is perpendicular to the second direction.

9. The atomic layer deposition device according to any one of claims 1 to 8, characterized in that: The reactor comprises a reaction section, an exhaust section and a connecting section connecting the reaction section and the exhaust section. The support frame and the grid are respectively arranged in the reaction section. The reaction section is provided with the air inlet; the exhaust section is provided with the exhaust port.

10. The atomic layer deposition apparatus according to claim 9, wherein: The cross-sectional area of ​​the connecting section gradually decreases along the direction from the reaction section to the exhaust section.

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