Welding wire heating base and WB welding wire machine

Abstract

The utility model discloses a bonding wire heating base and a WB bonding machine, the bonding wire heating base is applied to a frame of which the back surface is pasted with a film, the frame is a chip carrier, and the bonding wire heating base comprises a heating substrate; the heating substrate comprises a plurality of processing areas, and each processing area is used for bearing one array unit of the frame; annularly-distributed vacuum holes are formed in the positions, corresponding to the edges of the array units, of each machining area; the top end of the vacuum hole is positioned on the upper surface of the communicating processing area, and the bottom end is in gas communication with the vacuum pump; wherein the array unit of the frame is an area in which a plurality of processing chips are distributed in an array. According to the invention, each processing area of the heating substrate is provided with the annularly distributed vacuum holes corresponding to the edge position of the frame array unit, so that the bonding wires in the array unit are prevented from being distributed above the vacuum holes, and the problem that the bonding wires are not sticky due to the fact that the bonding wires and bonding pads are suspended above the vacuum holes is avoided; therefore, the yield of the processed chip bonding wire is improved, and the welding quality of the processed chip is ensured.

Description

Technical Field

[0001] The utility model relates to the technical field of WB wire bonding, in particular to a wire bonding heating base and a WB wire bonding machine. Background Art

[0002] WB wire bonding technology (Wire Bonding) heats and applies ultrasonic waves to the wire and the solder joint at the same time, causing plastic deformation between the wire pin and the pad, and destroying the oxide film on the contact surface between the wire pin and the pad, making it active, and completing the connection through mutual diffusion between the metals on the contact surface.

[0003] In practical applications, a frame carrying a large number of chips is usually fixed on a heating base with a heating function, and the heating and welding process is achieved by heating the chips and wire pins on the frame with ultrasonic waves. However, this welding technology is often prone to problems such as chip pads not sticking to the wire, low product yield, and poor quality in practical applications. Utility Model Content

[0004] The utility model aims to provide a wire bonding heating base and a WB wire bonding machine, which can improve the fastness of chip wire bonding to a certain extent and enhance the chip bonding effect.

[0005] In order to solve the above technical problems, the utility model provides a wire bonding heating base, which is applied to a frame of a back film, wherein the frame is a chip carrier, and the wire bonding heating base includes a heating substrate;

[0006] The heating substrate comprises a plurality of processing areas, each of which is used to carry an array unit of the frame; each of the processing areas is provided with annularly distributed vacuum holes corresponding to the edge of the array unit; the top of the vacuum hole is located in communication with the upper surface of the processing area, and the bottom end is in gas communication with the vacuum pump;

[0007] The array unit of the frame is an area where a plurality of processing chips are distributed in an array.

[0008] In an optional embodiment of the present application, a vacuum pipe connected to the bottom end of each vacuum hole is provided in the heating substrate, and the vacuum pipe is connected to the vacuum pump.

[0009] In an optional embodiment of the present application, the vacuum pipes corresponding to the respective processing areas of the heating substrate are gas-connected in sequence, and are connected to the vacuum pump through the same vacuum exhaust hole.

[0010] In an optional embodiment of the present application, the vacuum hole is a stepped hole with a gradually decreasing aperture from the top end to the bottom end.

[0011] In an optional embodiment of the present application, the upper surface of each of the processing areas of the heating substrate is also provided with a vacuum groove whose distribution position is the same as the distribution position of each of the vacuum holes; the top of each of the vacuum holes is located in the bottom of the vacuum groove; and the same vacuum groove connects multiple vacuum holes.

[0012] In an optional embodiment of the present application, the vacuum groove is a non-closed annular groove having at least one notch;

[0013] Furthermore, when the vacuum groove has a plurality of notches, the notches are symmetrically distributed.

[0014] In an optional embodiment of the present application, the vacuum holes in each processing area on the heating substrate are distributed in two circles in an annular manner; accordingly, a circle of vacuum grooves is correspondingly arranged at the top of each circle of vacuum holes.

[0015] In an optional embodiment of the present application, the gap distribution positions of the two circles of vacuum grooves are the same.

[0016] In an optional embodiment of the present application, the upper surface of the processing area and the edge surface of the vacuum groove are both frosted surfaces.

[0017] A WB wire bonding machine comprises: a wire bonding heating base as described in any of the above items; a heating device arranged on the lower surface of the wire bonding heating base; a vacuum pump connected to the vacuum hole in the wire bonding heating base; and an ultrasonic generator for generating ultrasonic waves required for ultrasonic hot pressing welding of a processed chip carried on the wire bonding heating base.

[0018] The utility model provides a wire welding heating base and a WB wire welding machine. The wire welding heating base is applied to a frame with a back film, the frame is a chip carrier, and the wire welding heating base includes a heating substrate; the heating substrate includes multiple processing areas, each processing area is used to carry an array unit of the frame; each processing area is provided with an annularly distributed vacuum hole corresponding to the edge position of the array unit; the top of the vacuum hole is located on the upper surface of the connected processing area, and the bottom end is gas-connected to a vacuum pump; wherein the array unit of the frame is an area where multiple processing chips are distributed in an array.

[0019] In order to realize the adsorption and fixation of the frame carrying the processed chip on the wire welding heating base in the present application, annularly distributed vacuum holes are set in each processing area of ​​the heating substrate corresponding to the edge position of each array unit of the frame, and the vacuum holes are connected to a vacuum pump; in addition, the frame in the present application is mainly for the frame with a film on the back side, and the edge position of each array unit is also the area of ​​the back film of the frame; therefore, when the frame is set on the heating substrate, the vacuum pump evacuates the vacuum hole, so that the heating substrate can adsorb and fix the frame more tightly; and because the vacuum hole is only set at the edge position of each processing area corresponding to the array unit on the heating substrate, the distribution of welding wires in the array unit and the position of the vacuum hole can be avoided, thereby ensuring that the heating substrate has a good support effect on the pads and welding wires in the array unit, that is, avoiding the problem of the welding wires and welding pads being suspended just above the vacuum hole, thereby greatly improving the yield rate of the welding wires of the processed chips and ensuring the welding quality of the processed chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the utility model or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] FIG1 is a schematic structural diagram of an existing heating substrate;

[0022] FIG2 is a schematic diagram of the structure of an array unit of the framework provided by the present application;

[0023] FIG3 is a schematic diagram of a partial structure of a processing chip carried on a frame provided by the present application;

[0024] FIG4 is a schematic diagram of the structure of a heating substrate provided in an embodiment of the present application;

[0025] FIG5 is a schematic diagram of a partial cross-sectional structure of a heating substrate provided in an embodiment of the present application.

[0026] In the accompanying drawings: 10 is a heating substrate, 11 is a vacuum hole, 12 is a vacuum pipe, 13 is a vacuum groove, 20 is a frame, 21 is a processing chip, 22 is a bonding wire, 23 is a pad pin, 24 is a film layer, and 25 is an array unit. DETAILED DESCRIPTION

[0027] On a conventional wire heating base used for ultrasonic hot pressing welding, there are generally a large number of vacuum holes discretely distributed on the entire heating substrate of the heating base; as shown in Figures 1 to 3, after a frame carrying a processed chip 21, a welding wire 22 and a pad pin 23 is placed on the heating substrate, a vacuum pump is used to draw vacuum from the vacuum hole 11, so that the frame 20 can be fixedly adsorbed on the heating substrate 10.

[0028] On the heating substrate 10, the vacuum holes 11 are roughly evenly distributed on the entire surface of the heating substrate 10 in a discrete manner. As shown in FIG3, when the welding wire 22 and the pad pin 23 on the frame 20 are located just above a certain vacuum hole 11, the welding wire 22 and the pad pin 23 are suspended in the air. Accordingly, when welding the welding wire 22 on the frame 11, it is necessary to apply a relatively large ultrasonic pressure to the welding wire 22, so as to weld the welding wire 22 and the pad pin 23 to each other; and if the welding wire 22 and the pad pin 23 are in a suspended state, when the welding wire 22 is subjected to downward pressure, it will inevitably sink into the vacuum hole 11, which means that the heating substrate 11 cannot provide support for the welding wire 22, which causes the welding of the welding wire 22 to fail.

[0029] In actual applications, the problem of poor welding of the welding wire 22 is often ignored because the vacuum holes 11 on the heating substrate 10 cause the welding wire 22 and the pad pin 23 to be in a vacuum state, and the poor welding effect of the welding wire 22 can only be seen from the result after the welding of the welding wire 22 is completed in the processing chip 21. However, this technical problem is discovered in the present application, and the layout of the vacuum holes 11 on the heating substrate 10 is reset, so that on the basis of achieving the adsorption and fixation of the frame 20, the problem of poor welding of the welding wire 22 is avoided to a large extent, and the yield rate of the welding of the welding wire 22 of the processing chip 21 is improved.

[0030] In order to enable those skilled in the art to better understand the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present invention.

[0031] As shown in Figure 2, Figure 2 is a schematic diagram of the structure of the frame shown in the embodiment of the present application. The frame 11 for carrying the chip 21 involved in the present application is mainly a frame 11 with a film on the back. Because the frame 11 has a film on the back, and because a film layer 24 is provided on the back of the frame 11, there is a non-hollow film area on the back of the frame 11, and the film layer 24 on the back has better ductility than other metal structures on the frame 11. When the film layer 24 and the vacuum hole 11 are in contact with each other, they can be better sealed and fitted with each other, and then tightly adsorbed, that is, the frame 11 is better adsorbed.

[0032] On this basis, as shown in FIG4 , FIG4 is a schematic structural diagram of a processing area of ​​a heating substrate provided in an embodiment of the present application;

[0033] In an optional embodiment of the present application, the welding wire heating base may specifically include:

[0034] The heating substrate 10 comprises a plurality of processing areas, each of which is used to carry an array unit 25 of the frame 20; a vacuum hole 11 distributed in an annular manner is arranged at an edge position of each processing area corresponding to an array unit 25; the top of the vacuum hole 11 is located at the upper surface of the processing area, and the bottom is connected to the vacuum pump;

[0035] The array unit 25 of the frame 20 is an area where a plurality of processing chips 21 are distributed in an array.

[0036] For the frame 20, its general structure can be divided into multiple array units 25 as shown in Figure 2, each array unit 25 contains a number of array-distributed processing chips 21; and the position where the film layer 24 is set on the back of the frame 20 corresponds to the edge position of each array unit 25.

[0037] Therefore, the heating substrate 10 in this embodiment can also be divided into multiple processing areas in a distributed manner. When the frame 20 is placed on the heating substrate 10, one array unit 25 of the frame 20 is located exactly on one processing area of ​​the heating substrate 10.

[0038] On this basis, the vacuum holes 11 are arranged in an annular distribution at the edge of each processing area. Obviously, the position of the vacuum holes 11 must be directly opposite to the edge of the array unit 25. When the frame 20 is arranged on the heating substrate 10, the top of each vacuum hole 11 is just directly opposite to the film layer 24 on the back of the array unit 25. Therefore, when the vacuum pump draws vacuum to the vacuum holes 11, a relatively large adsorption force can be generated on the edge of the array unit 25, so that the film layer 24 on the back of the array unit 25 is closely attached to the top of the vacuum hole 11.

[0039] It is understandable that the annular distribution shape of the vacuum holes 11 may be the same as the edge shape of the array unit 25 , and may be a square annular distribution, a rectangular annular distribution or other annular distribution, and this application does not make any specific limitation on this.

[0040] Based on the above embodiment, in order to achieve gas connectivity between the vacuum holes 11 on the heating substrate 10 and the vacuum pump, in another optional embodiment of the present application, a vacuum pipe 12 gas-connected to the bottom end of each vacuum hole 11 may be further provided in the heating substrate 10, and the vacuum pipe 12 is connected to the vacuum pump.

[0041] As shown in FIG. 4 , in actual applications, a plurality of interconnected vacuum pipes 12 can be processed in a heating substrate 10 having a certain thickness and running through the length and width directions thereof, and at least part of the vacuum pipes 12 are located directly below each vacuum hole 11, thereby realizing gas communication between each vacuum hole 11 and the vacuum pipes 12; and the ends of each vacuum pipe 12 located at the side of the heating substrate 10 are sealed and blocked, thereby forming a sealed pipe space for each vacuum pipe 12; in addition, the sealed pipe formed by each vacuum pipe 12 has one and only one vacuum exhaust hole connected to a vacuum pump, thereby, in actual applications, the vacuum hole 11 can be evacuated by a vacuum pump through the vacuum pipe 12, thereby realizing negative pressure adsorption of the array unit 25 on the frame 20 by each vacuum hole 11.

[0042] As shown above, each processing area on the heating substrate 10 is respectively provided with a vacuum hole 11, and correspondingly, a vacuum pipe 12 is respectively provided at the position corresponding to each processing area in the heating substrate 10. In order to simplify the connection structure between the vacuum pump and the vacuum pipe 12 as much as possible, in actual application, the vacuum pipes 12 corresponding to each processing area are gas-connected to each other, and all the vacuum pipes 12 in the entire heating substrate 10 share the same vacuum exhaust hole and are gas-connected to the vacuum pump. Therefore, the vacuum pump only needs to be gas-connected to the only vacuum exhaust hole on the heating substrate 10 to achieve negative pressure adsorption of the array units 25 on each processing area on the entire heating substrate 10.

[0043] In addition, in order to achieve good sealing between the film layer 24 on the back of the frame 20 and the top of the vacuum hole 11, as shown in Figure 5, in another optional embodiment of the present application, each vacuum hole 11 can adopt a stepped hole with a gradually decreasing aperture from the top to the bottom.

[0044] As shown in Figure 5, preferably, the height of the first layer of step holes of the vacuum hole 11 can be relatively small, so that when the frame 20 and the end of the vacuum hole 11 are adsorbed against each other, the film layer 24 on the back of the frame 20 can be sucked to fit together with the first step surface of the vacuum hole 11, thereby making the gap between the vacuum hole 11 and the film layer 24 on the back of the frame 20 a gap extending in a stepped manner rather than a flat gap, which to a certain extent increases the difficulty of air leakage in the gap between the top of the vacuum hole 11 and the film layer 24 on the back of the frame 20, thereby improving the sealing of the mutual adsorption between the two.

[0045] Based on the above discussion, it can be known that the position on the heating substrate 10 that can generate an adsorption force on the frame 20 is limited to the position where the vacuum hole 11 is provided. Therefore, in order to ensure that the adsorption force provided by each vacuum hole 11 on the frame 20 is large enough, the number of vacuum holes 11 can be increased as much as possible in practical applications. However, increasing the adsorption force of the heating substrate 10 on the frame 20 is not limited to the implementation method of increasing the number of vacuum holes 11. In another optional embodiment of the present application, a vacuum groove 13 can be further provided on the upper surface of each processing area of ​​the heating substrate 10, and the distribution position of the vacuum groove 13 is the same as the distribution position of each vacuum hole 11, and the top of each vacuum hole 11 is located at the bottom of the vacuum groove 13; and the same vacuum groove 13 connects multiple vacuum holes 11.

[0046] Obviously, the area covered by the vacuum groove 13 on the surface of the heating substrate 10 is much larger than the area occupied by each vacuum hole 11, and when the vacuum pump evacuates the vacuum hole 11, the space formed between the vacuum groove 13 and the film layer 24 on the back of the frame 20 can also form a negative pressure vacuum state, that is, the adsorption force on the frame 20 at this time is the adsorption force generated by the vacuum groove 13. Compared with the adsorption force generated by the vacuum hole 11 on the frame 20, the adsorption surface of the adsorption force generated by the vacuum groove 13 on the frame 20 is obviously greatly increased, and the adsorption capacity generated on the frame 20 is also stronger.

[0047] In addition, when the frame 20 is adsorbed by the negative pressure in the vacuum groove 13, the film layer 24 on the back side can also be adhered to and adsorbed on the bottom of the vacuum groove 13, thereby forming a stepped gap between the film layer 24 and the vacuum groove 13, that is, from the edge of the vacuum groove 13 to the bottom of the vacuum groove 13, thereby improving the sealing of the stepped gap, thereby improving the sealing between the film layer 24 and the vacuum groove 13 to a certain extent.

[0048] Furthermore, in another optional implementation of the present embodiment, the vacuum groove 13 is a non-closed annular groove having at least one notch; and when the vacuum groove 13 has a plurality of notches, the notches are symmetrically distributed.

[0049] In this embodiment, it is further considered that when the frame 20 is placed on the heating substrate 10, the vacuum grooves 13 corresponding to the processing areas of the heating substrate 10 adsorb the array units 25 of the frame 20, and the array units 25 of the frame 20 are not in a flat state; therefore, when the frame 20 is heated and ultrasonically welded, it is required that the array units 25 of the frame 20 can be extended to a certain extent into a flat state when subjected to ultrasonic pressure. At this time, if the vacuum grooves 13 are closed annular grooves, it is difficult for the array units 25 to be extended into a flat state. For this reason, in this embodiment, the vacuum grooves 13 are set as non-closed annular grooves with at least one notch, that is, the vacuum grooves 13 as a whole will have a weaker adsorption force on a certain position of the array unit 25, so that the array unit 25 can adjust the flatness of the array unit 25 at the position where the adsorption force is weaker.

[0050] As shown in FIG. 4 , in the embodiment shown in FIG. 4 , the vacuum groove 13 having a substantially square structure has only one notch; in practical applications, a notch may be provided at each of the two diagonal positions of the square vacuum groove 13 , and this is not specifically limited in the present application.

[0051] On this basis, in another optional implementation of the present embodiment, the vacuum holes 11 in each processing area on the heating substrate 10 are distributed in two circles in an annular manner; accordingly, a circle of vacuum grooves 13 is correspondingly arranged at the top of each circle of vacuum holes 11.

[0052] In order to further enhance the adsorption force of the heated substrate 10 on the frame 20 in this embodiment, two circles of parallel vacuum grooves 13 are provided in each processing area, and a vacuum hole 11 is provided at the bottom of each circle of vacuum grooves 13 .

[0053] Of course, in practical applications, a circle of vacuum grooves 13 with a larger width may also be provided, but two circles of vacuum holes 11 may be provided in the vacuum grooves 13 to also realize the technical solution of this embodiment.

[0054] In addition, even if two circles of vacuum grooves 13 are provided, each circle of vacuum grooves 13 may be provided with notches, and the notches of the two circles of vacuum grooves 13 may be distributed at the same position, thereby ensuring that the array unit 25 can be well extended at the specific notch position to adjust its flatness.

[0055] As described above, when the frame 20 is adsorbed by the heated substrate 10, the adsorption effect of the heated substrate 10 on the frame 20 depends to a certain extent on the sealing between the film layer 24 on the back of the frame 20 and the vacuum groove 13 on the heated substrate 10; for this reason, in the present application, in order to further improve the sealing between the film layer 24 on the back of the frame 20 and the vacuum groove 13 on the heated substrate 10, the edge surface of the vacuum groove 13 on the upper surface of the processing area can also be set to a frosted surface, that is, to increase the friction between the film layer 24 on the back of the frame 20 and the edge of the vacuum groove 13, thereby reducing the possibility of air leakage.

[0056] To summarize, in order to realize the adsorption and fixation of the frame carrying the processed chip on the wire welding heating base in the present application, an annularly distributed vacuum hole is set in each processing area of ​​the heating substrate corresponding to the edge position of each array unit of the frame, and the vacuum hole is connected to a vacuum pump; in addition, the frame in the present application is mainly for the frame with a film on the back, and the edge position of each array unit is also the area of ​​the back film of the frame; therefore, when the frame is set on the heating substrate, the vacuum pump evacuates the vacuum hole, so that the heating substrate can adsorb and fix the frame more tightly; and because the vacuum hole is only set at the edge position of each processing area corresponding to the array unit on the heating substrate, the distribution of the welding wires in the array unit and the position of the vacuum hole can be avoided, thereby ensuring that the heating substrate has a good support effect on the pads and welding wires in the array unit, that is, avoiding the problem of the welding wires and welding pads being suspended just above the vacuum hole, thereby greatly improving the yield rate of the welding wires of the processed chips and ensuring the welding quality of the processed chips.

[0057] Based on the above discussion, the present application also provides an embodiment of a WB wire bonding machine, which includes: a wire bonding heating base as described in any of the above items; a heating device arranged on the lower surface of the wire bonding heating base; a vacuum pump connected to the vacuum hole in the wire bonding heating base; and an ultrasonic generator for generating ultrasonic waves required for ultrasonic hot pressing of the processed chip carried on the wire bonding heating base.

[0058] In practical applications, the frame can be placed on a wire bonding heating base, and the film layer on the back of the frame is made to face the vacuum hole on the heating substrate. The vacuum hole is then evacuated using a vacuum pump to form a negative pressure state in the vacuum hole, thereby generating a negative pressure adsorption force on the frame. On this basis, a heating device is used to heat the heating substrate, and an ultrasonic generator is used to generate ultrasonic waves, thereby applying ultrasonic pressure to the wires on the frame, so that the wires and pads on the frame are welded under the conditions of heating and ultrasonic pressure, because each processing area on the heating substrate can provide effective support force for each array unit on the frame, thereby ensuring that effective pressure welding can be performed between the wires and pads, ensuring the quality of wire welding, and thus improving the yield rate of chip products.

[0059] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the term "includes", "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment comprising a series of elements are inherent to the elements. In the absence of more restrictions, the elements limited by the sentence "comprising one..." do not exclude the presence of other identical elements in the process, method, article or equipment comprising the elements. In addition, the above-mentioned technical solution provided in the embodiment of the present application is consistent with the corresponding technical solution in the prior art in principle, and the part is not described in detail, so as to avoid too much redundancy.

[0060] This article uses specific examples to illustrate the principles and implementation methods of the utility model. The above examples are only used to help understand the method and core ideas of the utility model. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the utility model, the utility model can also be improved and modified, and these improvements and modifications also fall within the scope of protection of the claims of the utility model.

Claims

1. A welding wire heating base, characterized in that: A frame applied to a back film, the frame being a chip carrier, and the wire bonding heating base comprising a heating substrate; The heating substrate comprises a plurality of processing areas, each of which is used to carry an array unit of the frame; each of the processing areas is provided with annularly distributed vacuum holes corresponding to the edge of the array unit; the top of the vacuum hole is located in communication with the upper surface of the processing area, and the bottom end is in gas communication with the vacuum pump; The array unit of the frame is an area where a plurality of processing chips are distributed in an array.

2. The welding wire heating base according to claim 1, characterized in that: A vacuum pipe connected to the bottom of each vacuum hole is arranged in the heating substrate, and the vacuum pipe is connected to the vacuum pump.

3. The welding wire heating base according to claim 2, characterized in that: The vacuum pipes corresponding to the processing areas of the heating substrate are gas-connected in sequence and are connected to the vacuum pump through the same vacuum exhaust hole.

4. The welding wire heating base according to claim 1, characterized in that: The vacuum hole is a stepped hole with a gradually decreasing aperture from the top end to the bottom end.

5. The welding wire heating base according to any one of claims 1 to 4, characterized in that: The upper surface of each processing area of ​​the heating substrate is also provided with a vacuum groove whose distribution position is the same as the distribution position of each vacuum hole; the top of each vacuum hole is located in the bottom of the vacuum groove; and the same vacuum groove connects multiple vacuum holes.

6. The welding wire heating base according to claim 5, characterized in that: The vacuum groove is a non-closed annular groove having at least one notch; Furthermore, when the vacuum groove has a plurality of notches, the notches are symmetrically distributed.

7. The welding wire heating base according to claim 6, characterized in that: The vacuum holes in each processing area on the heating substrate are distributed in two circles in an annular manner; accordingly, a circle of vacuum grooves is correspondingly arranged at the top of each circle of vacuum holes.

8. The welding wire heating base according to claim 7, characterized in that: The gap distribution positions of the two circles of vacuum grooves are the same.

9. The welding wire heating base according to claim 5, characterized in that: The upper surface of the processing area and the edge surface of the vacuum groove are both frosted surfaces.

10. A WB wire bonding machine, characterized in that: include: The welding wire heating base according to any one of claims 1 to 9; a heating device arranged on the lower surface of the welding wire heating base; A vacuum pump in gas communication with the vacuum hole in the welding wire heating base; And an ultrasonic generator is used to generate ultrasonic waves required for ultrasonic hot pressing welding of the processed chip carried on the welding wire heating base.

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