Feeding device and single crystal furnace

Abstract

The utility model discloses a feeding device and a single crystal furnace, and relates to the technical field of monocrystalline silicon production and manufacturing. The feeding device comprises a feeding body and a dust collection assembly, the feeding body is provided with a containing cavity, and the containing cavity is used for containing a silicon material; the dust collection assembly is arranged on the feeding body in a sleeving mode and comprises an air suction disc, and the air suction disc is used for sucking silicon powder. The silicon powder suction device can suck silicon powder, the raised silicon powder is prevented from falling off and being attached to the furnace neck of the single crystal furnace, the upper edge of the guide cylinder or the surface of a water-cooling heat shield and other parts, and the growth quality of a silicon single crystal rod is improved.

Description

Technical Field

[0001] The present application relates to the technical field of single crystal silicon production and manufacturing, and in particular to a feeding device and a single crystal furnace. Background Art

[0002] The production of single crystal silicon in the photovoltaic industry generally adopts the direct pulling method. In order to reduce costs, the continuous re-feeding crystal pulling process is gradually adopted. At present, the feeder used for re-feeding generates powder during the crushing, packaging, transportation and other processes of the silicon material. When the silicon material quickly falls into the quartz crucible, the silicon powder generated will rise up and fall on the furnace neck, the upper edge of the guide tube, the surface of the water-cooled heat screen, etc. In the process of equal diameter growth of single crystals, there is a risk of these silicon powders falling. After the silicon powder falls, the atomic arrangement structure of the single crystal silicon will change, resulting in the disconnection of the single crystal silicon growth process. At the same time, these silicon powders will adhere to the impurities such as carbon powder on the surface of graphite parts such as the guide tube. After falling into the silicon solution, it will also increase the carbon content of the single crystal silicon rod and reduce the quality of the single crystal silicon. Utility Model Content

[0003] In view of this, the purpose of the present application is to provide a feeding device and a single crystal furnace, aiming to solve the technical problems in the prior art.

[0004] To achieve the above objectives, the technical solutions adopted in this application are as follows:

[0005] In a first aspect, an embodiment of the present application provides a feeding device, comprising:

[0006] A feeding body, wherein the feeding body has a containing cavity, and the containing cavity is used to place silicon material;

[0007] A dust suction component is sleeved on the feeding body, and the dust suction component includes a suction disk, and the suction disk is used to suck silicon powder.

[0008] In one embodiment of the first aspect, the feeding body further comprises:

[0009] A barrel body, wherein the barrel body has the accommodating cavity;

[0010] The first flange is arranged at one end of the barrel body, the barrel body is fixedly connected to the first flange, and the first flange is used to support the barrel body on the furnace neck of the single crystal furnace.

[0011] In one embodiment of the first aspect, the dust collection assembly includes:

[0012] A support portion, the support portion is arranged on a side of the first flange away from the barrel body, and the support portion is mounted on the first flange;

[0013] A dust suction part, the dust suction part is sleeved on the barrel body, and the dust suction part includes a suction disc;

[0014] The connecting part is passed through the supporting part, the dust collecting part is arranged at one end of the connecting part away from the supporting part, the connecting part is located between the supporting part and the dust collecting part, and the connecting part is used to connect the supporting part and the dust collecting part.

[0015] In one embodiment of the first aspect, the connecting portion comprises:

[0016] a first connecting rod, the first connecting rod being sequentially arranged through the supporting portion and the barrel body, the first connecting rod being connected to the supporting portion, and having a first air passage therein;

[0017] A second connecting rod, the second connecting rod is passed through the supporting portion, the second connecting rod is located on the outer surface of the barrel body, one end of the second connecting rod away from the supporting portion is connected to the dust collecting portion, and a second air passage is provided in the second connecting rod;

[0018] a third connecting rod, the third connecting rod being passed through the supporting portion, the third connecting rod being located on the outer surface of the barrel body, one end of the third connecting rod away from the supporting portion being connected to the dust collecting portion, and the third connecting rod having a third air passage therein;

[0019] The suction disk is arranged at one end of the barrel body away from the first flange, and one end of the first connecting rod away from the supporting part is connected to the suction disk.

[0020] In one embodiment of the first aspect, the suction disc has a first suction duct, the first suction duct is arranged on a side of the suction disc away from the barrel body, and the suction duct is communicated with the first air duct.

[0021] In one embodiment of the first aspect, the air suction disc is further provided with a second air suction duct, the second air suction duct is arranged around the first air suction duct, and the second air suction duct is communicated with the first air suction duct;

[0022] A third air intake duct is provided on a side of the second air intake duct away from the first air intake duct, the third air intake duct is provided around the second air intake duct, and the third air intake duct is communicated with the first air intake duct.

[0023] In one of the embodiments of the first aspect, the dust suction part also includes a second flange, which is sleeved on the barrel body and can slide on the barrel body. The second flange is arranged at an end of the second connecting rod away from the first flange, and the second flange is located at an end of the third connecting rod away from the first flange.

[0024] In one embodiment of the first aspect, the second flange has a fourth air passage, and the fourth air passage is in communication with the third air passage;

[0025] A fourth air inlet is provided on a side of the second flange facing away from the barrel body, and the fourth air inlet is communicated with the fourth air duct. A fifth air inlet is provided on a side of the second flange facing away from the first flange, and the fifth air inlet is communicated with the fourth air duct.

[0026] In one embodiment of the first aspect, the second flange is further provided with a fifth air passage, the fifth air passage is located on a side of the fourth air passage close to the first flange, and the fifth air passage is communicated with the second air passage;

[0027] The second flange is also provided with an air blowing port, which is arranged on a side of the second flange away from the barrel body, and is located on a side of the fourth air inlet close to the first flange, and is communicated with the fifth air duct.

[0028] In a second aspect, an embodiment of the present application provides a single crystal furnace, comprising the feeding device described in any of the above embodiments.

[0029] Compared with the prior art, the beneficial effects of the present application are as follows: the present application proposes a feeding device and a single crystal furnace. The feeding device includes a feeding body and a dust suction assembly, the feeding body has a receiving cavity, the receiving cavity is used to place silicon material; the dust suction assembly is sleeved on the feeding body, the dust suction assembly includes a suction disk, and the suction disk is used to suck silicon powder. The present application uses the dust suction assembly and the suction disk in the dust suction assembly to suck the silicon powder that rises in the main furnace chamber out of the main furnace chamber, thereby preventing the raised silicon powder from falling and adhering to the furnace neck, the upper edge of the guide tube or the surface of the water-cooled heat screen of the single crystal furnace, thereby improving the growth quality of the single crystal silicon rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0031] Figure 1 The schematic diagram of the structure of the feeding device in the present application is shown;

[0032] Figure 2 It shows a schematic diagram of the structure of the feeding device in the present application in a state where no feeding is performed;

[0033] Figure 3A schematic diagram of the structure of the feeding device in the present application from one perspective is shown;

[0034] Figure 4 Another perspective structural diagram of the feeding device in the present application is shown;

[0035] Figure 5 A partial structural schematic diagram of the feeding device in the present application is shown;

[0036] Figure 6 Another partial structural schematic diagram of the feeding device in the present application is shown;

[0037] Figure 7 A schematic diagram of the structure of the support plate in the present application is shown;

[0038] Figure 8 Another structural schematic diagram of the support plate in the present application is shown;

[0039] Fig. 9 The schematic diagram of the structure of the single crystal furnace in this application is shown.

[0040] Description of main component symbols:

[0041] 100-feeding device; 110-feeding body; 111-barrel body; 1111-accommodating chamber; 112-first flange; 120-dust suction assembly; 121-supporting part; 1211-supporting plate; 1211a-first through hole; 1211b-second through hole; 1211c-third through hole; 1211d-fourth through hole; 1211e-fifth through hole; 122-connecting part; 1221-first connecting rod; 1221a-first airway; 1222-second connecting rod; 1222a-second airway; 1223-third connecting rod; 1223a-third airway; 123-dust suction part; 1231-suction plate; 1 231a-first air intake duct; 1231b-second air intake duct; 1231c-third air intake duct; 1231d-collecting chamber; 1232-second flange; 1232a-fourth air duct; 1232b-fifth air duct; 1232c-fourth air intake port; 1232d-fifth air intake port; 1232e-blowing port; 1232f-collecting trough; 101-main furnace chamber; 1011-quartz crucible; 102-furnace neck; 103-auxiliary chamber; 1031-first exhaust pipe; 1032-second exhaust pipe; 1033-air inlet; 1034-air outlet; 1035-weight hammer system; 1036-first air blowing pipe. DETAILED DESCRIPTION

[0042] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0043] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0044] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0045] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0046] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0047] like Figure 1 and Figure 2As shown, an embodiment of the present application provides a feeding device 100. The feeding device 100 includes a feeding body 110 and a dust collecting assembly 120.

[0048] In this embodiment, one end of the charging body 110 is mounted on the furnace neck 102 of the single crystal furnace, and one end of the charging body 110 away from the furnace neck 102 is placed in the main furnace chamber 101 of the single crystal furnace.

[0049] The feeding body 110 has a containing cavity 1111 , and the containing cavity 1111 is used for placing silicon material.

[0050] The dust suction component 120 is sleeved on the feeding body 110 , and the dust suction component 120 includes a suction disk 1231 , and the suction disk 1231 is used to suck silicon powder.

[0051] In the related art, the feeder used for re-feeding usually directly feeds the crucible through a pipeline. During the re-feeding process, the silicon materials produce powder due to mutual friction during packaging and transportation. When the silicon materials fall quickly into the crucible, the silicon powder produced will rise upward and fall on the furnace neck 102, the upper edge of the guide tube, the surface of the water-cooled heat shield, etc. In the equal diameter process of single crystal growth, these silicon dots and silicon powder are at risk of falling. After falling, the atomic arrangement structure of the single crystal silicon will change, resulting in crystal breakage. At the same time, the silicon dots formed by silicon sputtering adhere to the surface of graphite parts such as the guide tube, and impurities such as carbon powder will also fall into the silicon solution, thereby increasing the carbon content of the single crystal silicon rod and affecting the quality of the single crystal silicon rod.

[0052] In this embodiment, the feeding device 100 includes a feeding body 110 and a dust suction assembly 120. In this embodiment, the dust suction assembly 120 and the suction disk 1231 in the dust suction assembly 120 suck the silicon powder rising in the main furnace chamber 101 out of the main furnace chamber 101, thereby preventing the raised silicon powder from falling and adhering to the furnace neck 102 of the single crystal furnace, the upper edge of the guide tube or the surface of the water-cooled heat screen, thereby improving the growth quality of the single crystal silicon rod.

[0053] like Figure 3 As shown, the charging body 110 further includes a barrel body 111 and a first flange 112 .

[0054] The barrel body 111 has the accommodating cavity 1111. In this embodiment, the barrel body 111 is placed in the main furnace chamber 101. Optionally, the barrel body 111 is, for example, a quartz barrel.

[0055] Specifically, the first flange 112 is disposed at one end of the barrel body 111 , and the barrel body 111 is fixedly connected to the first flange 112 , and the fixed connection method is, for example, welding.

[0056] In this embodiment, the barrel body 111 is mounted on the furnace neck 102 of the single crystal furnace through the first flange 112. Specifically, in this embodiment, the first flange 112 is mounted on the furnace neck 102 of the single crystal furnace in a circular shape, thereby mounting the barrel body 111 on the furnace neck 102 of the single crystal furnace.

[0057] Furthermore, after the barrel body 111 is placed on the furnace neck 102 , one end of the barrel body 111 away from the first flange 112 is placed toward the main furnace chamber 101 , and one end of the barrel body 111 away from the first flange 112 is placed close to the quartz crucible 1011 of the main furnace chamber 101 .

[0058] Alternatively, if Figure 3 As shown, the dust suction assembly 120 includes a supporting portion 121 , a connecting portion 122 and a dust suction portion 123 .

[0059] The support portion 121 is disposed on a side of the first flange 112 away from the barrel body 111 , and the support portion 121 is mounted on the first flange 112 .

[0060] The connecting portion 122 is disposed through the supporting portion 121 . The connecting portion 122 is located between the supporting portion 121 and the dust collecting portion 123 . The connecting portion 122 is used to connect the supporting portion 121 and the dust collecting portion 123 .

[0061] The dust suction part 123 includes an air suction disc 1231 . The dust suction part 123 is disposed at one end of the connecting part 122 away from the supporting part 121 . The dust suction part 123 is sleeved on the barrel body 111 .

[0062] Optionally, the support portion 121 includes a support plate 1211 , the support plate 1211 is disposed on a side of the first flange 112 away from the barrel body 111 , and the connection portion 122 passes through the support plate 1211 .

[0063] Optionally, the shape of the support plate 1211 in this embodiment is, for example, rectangular or circular.

[0064] It should be noted that this embodiment does not limit the shape of the support plate 1211, and the specific shape of the support plate 1211 can be designed according to actual production conditions.

[0065] Optionally, the support plate 1211 is further provided with a first through hole 1211 a , a second through hole 1211 b and a third through hole 1211 c .

[0066] Among them, Figure 7 and Figure 8 As shown, the first through hole 1211 a corresponds to the accommodating cavity 1111 , that is, the first through hole 1211 a corresponds to the interior of the barrel body 111 .

[0067] In addition, the second through hole 1211b and the third through hole 1211c are respectively arranged on both sides of the first through hole 1211a, and the second through hole 1211b and the third through hole 1211c are symmetrically arranged relative to the first through hole 1211a. In addition, the second through hole 1211b and the third through hole 1211c are both arranged corresponding to the outer side of the barrel body 111.

[0068] Alternatively, if Figure 8 As shown, when the support plate 1211 is circular in shape, a fourth through hole 1211d and a fifth through hole 1211e are further provided on the support plate 1211. The fourth through hole 1211d and the fifth through hole 1211e are symmetrically arranged relative to the first through hole 1211a.

[0069] In this embodiment, the gas in the sub-chamber 103 can enter the main furnace chamber 101 through the fourth through hole 1211d and the fifth through hole 1211e, and the silicon powder rising in the main furnace chamber 101 can be blocked and flowed to the bottom of the single crystal furnace, thereby further reducing the risk of silicon powder falling and causing changes in the atomic arrangement structure of single crystal silicon, resulting in disconnection in the single crystal silicon growth process, and reducing the risk of silicon powder adhering to the surface of graphite parts such as the guide tube and its impurities such as carbon powder falling into the silicon solution to increase the carbon content of the single crystal silicon rod, thereby further improving the quality of single crystal silicon.

[0070] Specifically, the axes of the first through hole 1211a , the second through hole 1211b , the third through hole 1211c , the fourth through hole 1211d , and the fifth through hole 1211e are all parallel to the axis of the barrel body 111 .

[0071] Alternatively, if Figure 4 As shown, the connecting portion 122 includes a first connecting rod 1221 , a second connecting rod 1222 and a third connecting rod 1223 .

[0072] The first connecting rod 1221 is sequentially disposed through the support portion 121 and the barrel body 111, and the first connecting rod 1221 is connected to the support portion 121. The first connecting rod 1221 has a first air passage 1221a therein.

[0073] The air suction disk 1231 is disposed at one end of the barrel body 111 away from the first flange 112 , and one end of the first connecting rod 1221 away from the supporting portion 121 is connected to the air suction disk 1231 .

[0074] Specifically, the first connecting rod 1221 passes through the first through hole 1211a and the barrel body 111 in sequence.

[0075] In this embodiment, the weight system 1035 and the suction disk 1231 are connected via the first connecting rod 1221 .

[0076] Specifically, one end of the first connecting rod 1221 away from the first flange 112 is passed through the air suction disk 1231 and connected to the air suction disk 1231, and one end of the first connecting rod 1221 away from the air suction disk 1231 is connected to the weight system 1035 of the single crystal furnace, thereby connecting the air suction disk 1231 to the weight system 1035 of the single crystal furnace.

[0077] Optionally, the first connecting rod 1221 and the air suction disk 1231 are connected, for example, by a nut, and the first connecting rod 1221 and the support plate 1211 are connected, for example, by a nut.

[0078] In this embodiment, the accommodating cavity 1111 is opened or closed by the suction disk 1231 .

[0079] Specifically, in this embodiment, the rise and fall of the suction disk 1231 can be controlled by respectively controlling the rise and fall of the weight system 1035 .

[0080] Optionally, the rise of the getter plate 1231 is, for example, a movement away from the quartz crucible 1011 in the main furnace chamber 101 , and the descent of the getter plate 1231 is, for example, a movement close to the quartz crucible 1011 in the main furnace chamber 101 .

[0081] Optionally, the suction plate 1231 is, for example, a quartz cone, and the side surface of the cone is arranged near the accommodating chamber 1111, so that when the suction plate 1231 is lowered to feed the quartz crucible 1011, the silicon material in the accommodating chamber 1111 can slide smoothly along the side surface of the quartz cone into the quartz crucible 1011.

[0082] In addition, one end of the first connecting rod 1221 away from the suction disk 1231 is also connected to the first suction pipe 1031 of the auxiliary chamber 103 through a high temperature resistant connecting hose, that is, the first air channel 1221a is connected to the first suction pipe 1031. In this embodiment, gas can be sucked into the first air channel 1221a through the first suction pipe 1031.

[0083] Alternatively, if Figure 5 As shown, the suction disc 1231 has a first suction duct 1231a, and the first suction duct 1231a is arranged on the side of the suction disc 1231 away from the barrel body 111. The first suction duct 1231a is connected to the first air duct 1221a, and the first air suction duct 1231a has a first suction port at one end away from the first air duct 1221a, and the first suction port is located on the side of the suction disc 1231 away from the barrel body 111.

[0084] Specifically, the first air intake passage 1231a is disposed at the center of the air intake disk 1231, and the first air intake passage 1231a is disposed corresponding to the first air passage 1221a.

[0085] Specifically, the first air suction duct 1231a can suck away the silicon powder flying near the first air suction port through the first air suction port. Specifically, the first air suction pipe 1031 of the auxiliary chamber 103 is opened to suck the silicon powder flying near the first air suction port into the first air suction duct 1231a and the first air duct 1221a, and then suck out of the main furnace chamber 101 to prevent the silicon powder from rising.

[0086] Optionally, the air suction disc 1231 is further provided with a second air suction duct 1231b and a third air suction duct 1231c.

[0087] In this embodiment, there may be a plurality of second air intake ducts 1231b, and the plurality of second air intake ducts 1231b are arranged around the first air intake duct 1231a at intervals, and the plurality of second air intake ducts 1231b are all connected to the first air intake duct 1221a.

[0088] Optionally, a second air intake port is provided at one end of the second air intake duct 1231b away from the first air intake duct 1221a, and the second air intake port is located on a side of the air intake disc 1231 away from the barrel body 111.

[0089] Optionally, when there are multiple second air intake passages 1231b, there are also multiple second air intake ports, wherein the multiple second air intake ports are arranged around the first air intake port at intervals along the circumferential direction.

[0090] Specifically, the first exhaust pipe 1031 of the auxiliary chamber 103 is opened to suck the silicon powder flying near the second air inlet into the second air inlet 1231b and the first air channel 1221a, and then sucked out of the main furnace chamber 101 to prevent the silicon powder from rising.

[0091] It should be noted that a collecting chamber 1231d is further provided at the connection between the second air intake duct 1231b and the first air intake duct 1221a. The collecting chamber 1231d is located between the second air intake duct 1231b and the first air intake duct 1221a. The collecting chamber 1231d is used to collect silicon powder with large mass and particles that cannot be sucked away.

[0092] Optionally, the angle formed by the second air intake channel 1231b and the direction of the axis of the barrel 111 close to the air intake disk 1231 is set to be a first angle, and the magnitude of the first angle ranges from 20 to 70 degrees. Optionally, the magnitude of the first angle is, for example, 30 degrees, 60 degrees or 70 degrees.

[0093] Optionally, the distance between the second air inlet and the center of the circle of the surface of the air inlet disc 1231 away from the barrel body 111 is, for example, a quarter to a half of the radius of the surface of the air inlet disc 1231 away from the barrel body 111. Optionally, the distance between the second air inlet and the center of the circle of the surface of the air inlet disc 1231 away from the barrel body 111 is, for example, a quarter of the radius of the surface of the air inlet disc 1231 away from the barrel body 111, or half of the radius of the surface of the air inlet disc 1231 away from the barrel body 111.

[0094] Optionally, the third air intake duct 1231c is located on a side of the second air intake duct 1231b away from the first air intake duct 1231a, the third air intake duct 1231c is arranged around the second air intake duct 1231b, and the third air intake duct 1231c is communicated with the first air intake duct 1221a.

[0095] In this embodiment, there may be a plurality of third air intake ducts 1231c, and the plurality of third air intake ducts 1231c are arranged around the first air intake duct 1231a at intervals, and the plurality of third air intake ducts 1231c are all connected to the first air intake duct 1221a.

[0096] Optionally, a third air intake port is provided at one end of the third air intake duct 1231c away from the first air intake duct 1221a, and the third air intake port is located on a side of the air intake disc 1231 away from the barrel body 111.

[0097] Optionally, when there are multiple third air intake passages 1231c, there are also multiple third air intake ports, wherein the multiple third air intake ports are arranged around the first air intake port at intervals along the circumferential direction.

[0098] Specifically, the first exhaust pipe 1031 of the auxiliary chamber 103 is opened to suck the silicon powder flying near the third air inlet into the third air inlet 1231c and the first air channel 1221a, and then sucked out of the main furnace chamber 101 to prevent the silicon powder from rising.

[0099] Optionally, the angle formed by the third air intake channel 1231c and the direction of the axis of the barrel body 111 close to the air intake disk 1231 is set to be, for example, a second angle, the size of the second angle is equal to the size of the first angle, and the size range of the second angle is 20 to 70 degrees. Optionally, the size of the second angle is, for example, 30 degrees, 60 degrees or 70 degrees.

[0100] Optionally, the distance between the third air inlet and the center of a circle of a surface of the air inlet disc 1231 facing away from the barrel body 111 ranges from one-half to five-sixths of the radius of a surface of the air inlet disc 1231 facing away from the barrel body 111 , for example.

[0101] Optionally, the distance between the third air inlet and the center of the surface of the air suction disk 1231 away from the barrel body 111 is, for example, half of the radius of the surface of the air suction disk 1231 away from the barrel body 111, or five-sixths of the radius of the surface of the air suction disk 1231 away from the barrel body 111.

[0102] Alternatively, if Figure 4 As shown, the second connecting rod 1222 is disposed through the supporting portion 121, the second connecting rod 1222 is located on the outer surface of the barrel body 111, and one end of the second connecting rod 1222 away from the supporting portion 121 is connected to the dust collecting portion 123. The second connecting rod 1222 has a second air passage 1222a therein.

[0103] Specifically, one end of the second connecting rod 1222 close to the supporting plate 1211 is connected to the supporting plate 1211, for example, via a nut.

[0104] In this embodiment, one end of the second connecting rod 1222 away from the dust suction portion 123 is connected to the first air blowing pipe 1036 .

[0105] The first air blowing pipe 1036 is disposed on the auxiliary chamber 103 of the single crystal furnace, and the second connecting rod 1222 is connected to the first air blowing pipe 1036, for example, through a high temperature resistant connecting hose, that is, the second air channel 1222a is connected to the first air blowing pipe 1036, and gas can be introduced into the second air channel 1222a through the first air blowing pipe 1036. Optionally, the gas is, for example, argon.

[0106] Optionally, the third connecting rod 1223 is disposed through the support portion 121, the third connecting rod 1223 is located on the outer surface of the barrel body 111, and one end of the third connecting rod 1223 away from the support portion 121 is connected to the dust collecting portion 123. The third connecting rod 1223 has a third air channel 1223a therein.

[0107] One end of the third connecting rod 1223 close to the support plate 1211 is connected to the support plate 1211, for example, via a nut.

[0108] In this embodiment, one end of the third connecting rod 1223 away from the dust suction part 123 is connected to the second air extraction pipe 1032 .

[0109] Among them, the second exhaust pipe 1032 is arranged on the sub-chamber 103 of the single crystal furnace, and the third connecting rod 1223 is connected to the second exhaust pipe 1032, for example, through a high-temperature resistant connecting hose, that is, the third air duct 1223a is connected to the second exhaust pipe 1032, and the gas in the second air duct 1222a can be sucked through the second exhaust pipe 1032.

[0110] Alternatively, if Figure 4 and Figure 6As shown, the dust suction part 123 further includes a second flange 1232 , and the second flange 1232 is sleeved on the barrel body 111 , and the second flange 1232 can slide on the barrel body 111 .

[0111] Specifically, the second flange 1232 is arranged at an end of the second connecting rod 1222 away from the first flange 112, and the second flange 1232 is located at an end of the third connecting rod 1223 away from the first flange 112, and the second flange 1232 is connected to the second connecting rod 1222 and the third connecting rod 1223 respectively.

[0112] Optionally, the second flange 1232 has a fourth air channel 1232a, and the fourth air channel 1232a is communicated with the third air channel 1223a.

[0113] A fourth air inlet 1232c is provided on a side of the second flange 1232 facing away from the barrel body 111, and the fourth air inlet 1232c is communicated with the fourth air duct 1232a. A fifth air inlet 1232d is provided on a side of the second flange 1232 facing away from the first flange 112, and the fifth air inlet 1232d is communicated with the fourth air duct 1232a.

[0114] In this embodiment, there are multiple fourth air inlets 1232c, which are arranged at intervals along the circumferential direction. Optionally, the number of the fourth air inlets 1232c ranges from 10 to 100, that is, the number of the fourth air inlets 1232c is, for example, 10, 50 or 100.

[0115] In this embodiment, there are a plurality of fifth air inlets 1232d, the fifth air inlets 1232d are arranged at intervals along the circumferential direction, and the fourth air inlets 1232c and the fifth air inlets 1232d are arranged alternately along the circumferential direction.

[0116] It should be noted that the number of the fourth air inlets 1232c is equal to the number of the fifth air inlets 1232d.

[0117] Optionally, the number of the fifth air inlets 1232d ranges from 10 to 100, that is, the number of the fifth air inlets 1232d is, for example, 10, 50 or 100.

[0118] The present embodiment sucks the rising silicon powder in the main furnace chamber 101 through the first air intake port, the second air intake port, the third air intake port, the fourth air intake port 1232c and the fifth air intake port 1232d, thereby preventing the silicon powder from rising, further reducing the risk of silicon powder falling and causing the atomic arrangement structure of the single crystal silicon to change, resulting in the risk of disconnection in the single crystal silicon growth process, and reducing the risk of silicon powder adhering to the surface of graphite parts such as the guide tube and impurities such as carbon powder falling into the silicon solution to increase the carbon content of the single crystal silicon rod, thereby further improving the quality of the single crystal silicon.

[0119] The second flange 1232 is further provided with a fifth air passage 1232b. The fifth air passage 1232b is located at a side of the fourth air passage 1232a close to the first flange 112. The fifth air passage 1232b is communicated with the second air passage 1222a.

[0120] The second flange 1232 is also provided with an air blowing port 1232e, which is arranged on a side of the second flange 1232 away from the barrel body 111, and is located on a side of the fourth air inlet 1232c close to the first flange 112, and is connected to the fifth air duct 1232b.

[0121] The blowing port 1232e can be tilted at a certain angle toward the suction disk 1231 to improve the effect of blowing silicon powder, and the tilt angle range is, for example, 1 to 10 degrees. Optionally, the tilt angle is, for example, 3 degrees, 5 degrees or 10 degrees.

[0122] In this embodiment, impurities such as silicon powder and oxides remaining on the surface of the guide tube or the water-cooled heat shield are blown up through the blowing port 1232e, and the larger airflow in the auxiliary chamber 103 causes the silicon powder and oxides and other impurities to flow to the bottom of the furnace, and then are drawn away through the exhaust pipe at the bottom of the single crystal furnace, thereby further improving the growth quality of the single crystal silicon rod.

[0123] Optionally, a collecting groove 1232f is provided on the side of the second flange 1232 facing away from the suction disk 1231. In this embodiment, the falling silicon powder is collected by the collecting groove 1232f, thereby reducing the risk of the falling silicon powder causing the change of the atomic arrangement structure of the single crystal silicon, resulting in the breakage of the single crystal silicon growth process, and reducing the risk of silicon powder adhering to the surface of graphite parts such as the guide tube, and its carbon powder and other impurities falling into the silicon solution to increase the carbon content of the single crystal silicon rod, thereby further improving the quality of the single crystal silicon.

[0124] In this embodiment, the first connecting rod 1221 is lowered by the heavy hammer system 1035, and the first connecting rod 1221 drives the suction disk 1231, the support plate 1211, the second connecting rod 1222 and the third connecting rod 1223 to descend in the direction close to the quartz crucible 1011, thereby driving the second flange 1232 to descend on the barrel body 111 in the direction close to the quartz crucible 1011.

[0125] When the suction disk 1231 descends, the suction disk 1231 is separated from the barrel body 111 , and the silicon material in the accommodating cavity 1111 falls into the quartz crucible 1011 .

[0126] In addition, as the suction plate 1231 descends, the second flange 1232 also descends close to the quartz crucible 1011, and the first suction port, the second suction port, the third suction port, the fourth suction port 1232c and the fifth suction port 1232d suck the rising silicon powder, thereby effectively preventing the silicon powder from flying when the silicon material falls into the quartz crucible 1011, reducing the risk of wire breakage during the growth of single crystal silicon, and further improving the quality of single crystal silicon growth.

[0127] like Fig. 9 As shown, this embodiment provides a single crystal furnace, which has the feeding device 100 described in any of the above embodiments, and thus has all the beneficial effects of the feeding device 100, which will not be described one by one here.

[0128] Optionally, in order to further improve the barrier effect of silicon powder, in this embodiment, an air inlet 1033 and an air outlet 1034 are provided on the auxiliary chamber 103 of the single crystal furnace.

[0129] The air inlet 1033 is arranged at an end of the auxiliary chamber 103 away from the furnace neck 102 , and the air outlet 1034 is arranged at an end of the auxiliary chamber 103 close to the furnace neck 102 .

[0130] Specifically, when the feeding device 100 in this embodiment is feeding into the quartz crucible 1011, argon gas is introduced into the auxiliary chamber 103 through the gas inlet 1033, and the argon gas is made to flow in the direction close to the furnace neck 102, and flows into the main furnace chamber 101 from the fourth through hole 1211d and the fifth through hole 1211e.

[0131] Among them, when the air outlet 1232e blows up impurities such as silicon powder and oxides remaining on the surface of the guide tube or the water-cooled heat shield, the larger argon gas flow introduced from the air inlet 1033 causes the silicon powder and oxides and other impurities to flow to the bottom of the furnace, and then they are drawn away through the exhaust pipe located at the bottom of the single crystal furnace, thereby improving the growth quality of the single crystal silicon rod.

[0132] At the same time, the larger argon gas flow introduced from the gas inlet 1033 can further prevent the silicon powder from flying upward, thereby further improving the growth quality of the single crystal silicon rod.

[0133] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0134] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A feeding device, characterized in that: include: A feeding body, wherein the feeding body has a containing cavity, and the containing cavity is used to place silicon material; A dust suction component is sleeved on the feeding body, and the dust suction component includes a suction disk, and the suction disk is used to suck silicon powder.

2. The feeding device according to claim 1, characterized in that: The feeding body also includes: A barrel body, wherein the barrel body has the accommodating cavity; The first flange is arranged at one end of the barrel body, the barrel body is fixedly connected to the first flange, and the first flange is used to support the barrel body on the furnace neck of the single crystal furnace.

3. The feeding device according to claim 2, characterized in that: The dust collection component comprises: A support portion, the support portion is arranged on a side of the first flange away from the barrel body, and the support portion is mounted on the first flange; A dust suction part, the dust suction part is sleeved on the barrel body, and the dust suction part includes a suction disc; The connecting part is passed through the supporting part, the dust collecting part is arranged at one end of the connecting part away from the supporting part, the connecting part is located between the supporting part and the dust collecting part, and the connecting part is used to connect the supporting part and the dust collecting part.

4. The feeding device according to claim 3, characterized in that: The connecting portion comprises: a first connecting rod, the first connecting rod being sequentially arranged through the supporting portion and the barrel body, the first connecting rod being connected to the supporting portion, and having a first air passage therein; A second connecting rod, the second connecting rod is passed through the supporting portion, the second connecting rod is located on the outer surface of the barrel body, one end of the second connecting rod away from the supporting portion is connected to the dust collecting portion, and a second air passage is provided in the second connecting rod; a third connecting rod, the third connecting rod being passed through the supporting portion, the third connecting rod being located on the outer surface of the barrel body, one end of the third connecting rod away from the supporting portion being connected to the dust collecting portion, and the third connecting rod having a third air passage therein; The suction disk is arranged at one end of the barrel body away from the first flange, and one end of the first connecting rod away from the supporting part is connected to the suction disk.

5. The feeding device according to claim 4, characterized in that: The suction disc has a first suction channel, the first suction channel is arranged on a side of the suction disc away from the barrel body, and the suction channel is communicated with the first air channel.

6. The feeding device according to claim 5, characterized in that: The air suction disc is further provided with a second air suction duct, the second air suction duct is arranged around the first air suction duct, and the second air suction duct is communicated with the first air suction duct; A third air intake duct is arranged on a side of the second air intake duct away from the first air intake duct, the third air intake duct is arranged around the second air intake duct, and the third air intake duct is communicated with the first air intake duct.

7. The feeding device according to claim 4, characterized in that: The dust suction part also includes a second flange, which is sleeved on the barrel body and can slide on the barrel body. The second flange is arranged at an end of the second connecting rod away from the first flange, and the second flange is located at an end of the third connecting rod away from the first flange.

8. The feeding device according to claim 7, characterized in that: The second flange has a fourth air passage, and the fourth air passage is in communication with the third air passage; A fourth air inlet is provided on a side of the second flange facing away from the barrel body, and the fourth air inlet is communicated with the fourth air duct. A fifth air inlet is provided on a side of the second flange facing away from the first flange, and the fifth air inlet is communicated with the fourth air duct.

9. The feeding device according to claim 8, characterized in that: The second flange is further provided with a fifth air passage, the fifth air passage is located on a side of the fourth air passage close to the first flange, and the fifth air passage is communicated with the second air passage; The second flange is also provided with an air blowing port, which is arranged on a side of the second flange away from the barrel body, and is located on a side of the fourth air inlet close to the first flange, and is communicated with the fifth air duct.

10. A single crystal furnace, characterized in that: The invention comprises the feeding device according to any one of claims 1 to 9.

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