Two-sided heat dissipation silicon carbide power module packaging structure

Abstract

The utility model relates to the technical field of power electronic devices, in particular to a double-sided heat dissipation silicon carbide power module packaging structure, which comprises a plurality of silicon carbide power devices, an upper ceramic substrate and a lower ceramic substrate. The silicon carbide power devices are placed on the copper layer through the upper nano-silver sintering layer, the metal gasket and the lower nano-silver sintering layer, the silicon carbide power devices on each ceramic substrate are connected through the metal connecting wire, the upper ceramic substrate and the lower ceramic substrate are connected through the metal connecting column, and the radiators are arranged outside the upper ceramic substrate and the lower ceramic substrate respectively. According to the structure, the double-sided radiator and the nano-silver sintering material are used, so that the heat dissipation performance of the whole module is improved, the service life of a packaging body is prolonged, and the packaging body is more aging-resistant.

Description

Technical Field

[0001] The utility model relates to the technical field of power electronic devices, in particular to a double-sided heat dissipation silicon carbide power module packaging structure. Background Art

[0002] Power semiconductor devices are widely used in computers, network communications, consumer electronics, industrial control, automotive electronics, locomotive traction, steel smelting, high-power power supplies, power systems and other fields. In addition to ensuring the normal operation of these equipment, power devices can also play an effective energy-saving role. They are indispensable in developing a low-carbon economy, saving energy and reducing emissions, and controlling climate warming.

[0003] Traditional silicon-based power devices are limited by the properties of their own materials and are difficult to play a role in the field of high voltage, high speed and high frequency. Compared with silicon, silicon carbide (SiC) has many excellent properties such as higher breakdown electric field strength (4-20 times), larger bandgap width (3 times), lower intrinsic carrier concentration (10-35 orders of magnitude), higher thermal conductivity (3-13 times) and larger saturated electron drift velocity (2-2.5 times), and has broad application prospects. At present, most silicon carbide power modules adopt a single-sided heat dissipation packaging structure, which directly affects the overall heat dissipation performance of the module and has great restrictions on the use direction and scope of devices and modules. This packaging method lacks reliability under high-power and high-temperature working conditions. Summary of the invention

[0004] The technical problem to be solved by the utility model is to provide a double-sided heat dissipation silicon carbide power module packaging structure to solve the above-mentioned problem.

[0005] The utility model solves the above technical problem through a technical solution: a double-sided heat dissipation silicon carbide power module packaging structure, comprising an upper and lower ceramic substrate, two copper layers are respectively arranged on the ceramic substrate, a silicon carbide power chip, an upper power terminal and a lower power terminal are arranged on the copper layer, and a solder layer and a metal gasket are arranged between the silicon carbide power chip and the copper layer.

[0006] As a preferred technical solution of the utility model, an upper heat sink and a lower heat sink are respectively connected to the two ceramic substrates.

[0007] As a preferred technical solution of the utility model, the silicon carbide power chip is sequentially connected with an upper nano-silver sintered layer, a metal gasket, and a lower nano-silver sintered layer, and the lower nano-silver sintered layer is connected to the copper layer.

[0008] As a preferred technical solution of the present utility model, the material of the metal gasket is aluminum, gold, silver or copper.

[0009] As a preferred technical solution of the utility model, the silicon carbide power chips on the ceramic substrate are connected via metal connecting wires.

[0010] As a preferred technical solution of the present invention, the material of the metal connecting wire is aluminum, gold, silver or copper.

[0011] As a preferred technical solution of the utility model, the copper layers of the ceramic substrate are connected via metal connecting columns.

[0012] As a preferred technical solution of the present invention, the material of the metal connecting column is aluminum, gold, silver or copper.

[0013] As a preferred technical solution of the utility model, the ceramic substrate, the silicon carbide power device and the power terminal are all arranged in epoxy resin.

[0014] Since the utility model adopts such a structure, it has the following beneficial effects:

[0015] 1. The utility model has two ceramic substrates with radiators respectively arranged thereon, achieving the effect of double-sided heat dissipation and increasing the heat loss route;

[0016] 2. The utility model uses four silicon carbide power chips in series, which increases the voltage of the entire module, increases the use direction of the module, and improves its purpose;

[0017] 3. The silicon carbide power device of the utility model adopts nano silver sintering material connected with the copper layer on the ceramic substrate, which has better heat dissipation performance;

[0018] 4. All components in the utility model can be fixed on the ceramic substrate, and circuit problems caused by component movement will not occur;

[0019] 5. There is no solder layer above the silicon carbide power chip inside the module of the utility model, which reduces the probability of problems with the power module during operation and improves the overall reliability of the module;

[0020] 6. The power module of the utility model can directly use single-sided solderable chips, which reduces the manufacturing cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the structure of the utility model.

[0022] Figure 2 It is a schematic diagram of the lower substrate structure of the utility model.

[0023] Figure 3 It is a schematic diagram of the upper substrate structure of the utility model.

[0024] Figure 4It is a side view of the upper substrate structure of the utility model.

[0025] Among them: 1. upper heat sink; 2. metal connecting column; 3. lower heat sink; 4. resistor; 5. lower power terminal; 6. capacitor; 7. metal connecting wire; 8. upper power terminal; 9. ceramic substrate; 10. copper layer; 11. lower nano-silver sintering layer; 12. metal gasket; 13. upper nano-silver sintering layer; 14. silicon carbide power chip. DETAILED DESCRIPTION

[0026] The utility model is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0027] like Figure 1-4 As shown, a double-sided heat dissipation silicon carbide power module packaging structure includes an upper and lower ceramic substrate, two copper layers are respectively arranged on the ceramic substrate, a silicon carbide power chip, an upper power terminal and a lower power terminal are arranged on the copper layer, and a solder layer and a metal gasket are arranged between the silicon carbide power chip and the copper layer. The upper and lower ceramic substrates are respectively connected to an upper heat sink and a lower heat sink. There are two copper layers on the ceramic substrate, and the silicon carbide power chip is connected to the copper layer through an upper nanosilver sintered layer, a metal gasket, and a lower nanosilver sintered layer.

[0028] Furthermore, in the present invention, the metal gasket can be one of aluminum, gold, silver and copper.

[0029] Furthermore, the utility model discloses that the silicon carbide power chips on each ceramic substrate are connected via metal connecting wires, and the metal connecting wires may be one of aluminum, gold, silver, and copper.

[0030] Furthermore, in the present invention, the copper layers of the upper and lower ceramic substrates are connected via metal connecting columns, and the metal connecting columns can be made of one of aluminum, silver and copper.

[0031] Furthermore, the utility model discloses that the ceramic substrate, the silicon carbide power device and the power terminal are all arranged in epoxy resin.

[0032] Furthermore, the utility model provides heat sinks on the two ceramic substrates respectively, so as to achieve the double-sided heat dissipation effect and increase the heat loss route.

[0033] The utility model further uses four silicon carbide power devices connected in series, thereby increasing the voltage of the entire module, increasing the use directions of the module, and improving the purpose.

[0034] Furthermore, the silicon carbide power device of the utility model adopts nano silver sintering material to connect with the copper layer on the ceramic substrate, so the heat dissipation performance is better.

[0035] Furthermore, in the present invention, all components can be fixed on the ceramic substrate, and circuit problems caused by component movement will not occur.

[0036] Furthermore, the utility model does not have a solder layer above the silicon carbide power chip inside the module, which reduces the probability of problems occurring in the power module during operation and improves the overall reliability of the module.

[0037] Furthermore, the power module of the utility model can directly use a single-sided solderable chip, thereby reducing the manufacturing cost.

[0038] In summary, under the same conditions, the utility model has better heat dissipation effect, longer service life and higher reliability.

[0039] The description and application of the utility model here are illustrative and are not intended to limit the scope of the utility model to the above-described embodiments. Variations and changes of the embodiments disclosed here are possible, and the actual replacement of the embodiments and the various components equivalent to those of ordinary skill in the art are well known. It should be clear to those skilled in the art that the utility model can be implemented in other forms, structures, arrangements, proportions, and with other elements, materials, and components without departing from the spirit or essential features of the utility model. Other variations and changes can be made to the embodiments disclosed here without departing from the spirit or essential features of the utility model.

Claims

1. A double-sided heat dissipation silicon carbide power module packaging structure, characterized by: It comprises an upper and lower ceramic substrate (9), two copper layers (10) are respectively arranged on the ceramic substrate (9), a silicon carbide power chip (14), an upper power terminal (8) and a lower power terminal (5) are arranged on the copper layer (10), and a solder layer and a metal gasket are arranged between the silicon carbide power chip (14) and the copper layer (10).

2. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 1 is characterized in that: An upper heat sink (1) and a lower heat sink (3) are respectively connected to the outside of the two ceramic substrates (9).

3. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 1 is characterized in that: The silicon carbide power chip (14) is sequentially connected to an upper nano-silver sintered layer (13), a metal gasket (12), and a lower nano-silver sintered layer (11); the lower nano-silver sintered layer (11) is connected to the copper layer (10).

4. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 3 is characterized in that: The material of the metal gasket (12) is aluminum, gold, silver or copper.

5. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 1 is characterized in that: The silicon carbide power chips (14) on the ceramic substrate (9) are connected via metal connecting wires (7).

6. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 5 is characterized in that: The material of the metal connecting wire (7) is aluminum, gold, silver or copper.

7. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 1 is characterized in that: The copper layers of the ceramic substrate (9) are connected via metal connecting columns (2).

8. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 7 is characterized in that: The material of the metal connecting column (2) is aluminum, gold, silver or copper.

9. The double-sided heat dissipation silicon carbide power module packaging structure according to claim 2 is characterized in that: The ceramic substrate (9), the silicon carbide power device and the power terminal are all arranged in epoxy resin.

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