Keyboard key sensing structure
By using infrared photodiodes and infrared receiving transistors in the keyboard combined with the double-hole rubber ring structure, the problem of short circuits and slow response speeds of thin-film keyboards being easily affected by moisture is solved, and the keyboard functions with fast response and strong anti-interference capabilities are achieved.
Patent Information
- Application Number
- CN202421222114.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-31
- Publication Date
- 2025-02-18
- Estimated Expiration
- 2034-05-31
AI Technical Summary
Existing film keyboards are prone to moisture and cause short circuits, slow response speed, making it difficult to meet the needs of fast input and operation.
The structure of infrared photodiode and infrared receiving transistor combined with a double-hole rubber ring is adopted to realize the button function through infrared sensing technology. Even if moisture enters, it will not affect the keyboard function, avoiding short circuit caused by internal moisture.
It achieves fast button response speed, good stability and strong anti-interference, and is suitable for players and professional users who need quick input and operation.
Smart Images

Figure CN222507407U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of key sensing, in particular to a keyboard key sensing structure. Background Art
[0002] Existing membrane keyboards are usually composed of a layer of plastic film and a layer of contact film. Input is completed through the change in capacitance between the contact point of the key and the plastic film. Membrane keyboards are usually lighter, easier to carry and move, and produce very little sound when pressed, making them suitable for use in environments that require quietness. However, the inside of membrane keyboards is easily affected by moisture. Once moisture enters the keyboard, it may cause a short circuit. Membrane keyboards have a slow keyboard response speed, which may cause inconvenience to players and professional users who need fast input and operation. Utility Model Content
[0003] In view of the deficiencies in the prior art, the utility model provides a keyboard key sensing structure, which solves the problem that the inside of the membrane keyboard is easily affected by moisture and causes short circuits, making it inconvenient for quick input. It has the advantages of fast key response speed, good stability, strong anti-interference and high durability.
[0004] In order to achieve the above purpose, the utility model provides the following technical solutions:
[0005] A keyboard key sensing structure comprises a panel layer for marking and pressing keys, a surface adhesive layer for sealing and connecting is connected to the panel layer, and a circuit layer for realizing key functions is also connected to the surface adhesive layer; the circuit layer comprises a plurality of first key areas, an infrared photodiode and an infrared receiving transistor are welded at the center of the first key areas, and the infrared photodiode and the infrared receiving transistor are sleeved with the same double-hole rubber ring.
[0006] Furthermore, the panel layer includes a plurality of second key areas, the number and position of the second key areas correspond to those of the first key areas, and the second key areas are provided with patterns and texts with logos.
[0007] Furthermore, the distance between the infrared photodiode and the infrared receiving transistor is 1 mm.
[0008] Furthermore, the thickness of the panel layer is less than 0.25 mm.
[0009] Furthermore, the thickness of the surface adhesive layer ranges from 0.05 to 0.15.
[0010] Furthermore, the infrared photodiode adopts a 0603-size short-wave infrared photodiode with a ball head, and the infrared receiving transistor adopts a 0603-size infrared receiving transistor.
[0011] Furthermore, the double-hole rubber ring is compatible with the infrared photodiode and the infrared receiving transistor.
[0012] Compared with the prior art, the present invention provides a keyboard key sensing structure having the following features:
[0013] Beneficial effects:
[0014] 1. The utility model transmits light signals through infrared photodiodes, which are then reflected by keycaps to infrared receiving transistors, which receive and convert them into electrical signals to realize key functions. Infrared photodiodes and infrared receiving transistors are used to realize key functions. Even if moisture enters, it will not affect the keyboard function, further avoiding short circuits caused by internal moisture. The infrared sensing technology makes the keyboard respond very quickly, with a short trigger stroke, and can trigger key signals faster, meeting the needs of players and professional users who need fast input and operation.
[0015] 2. The utility model transmits optical signals in one direction, and the input and output ends are completely electrically isolated. The output signal waveform is free from fluctuations and is not affected by the outside world, which makes the keyboard more stable during operation and not affected by environmental interference. Due to the use of infrared sensing technology, the keyboard has a stronger resistance to electromagnetic interference and can maintain stable performance in various electromagnetic environments. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0017] Figure 1 This is a schematic diagram of the installation of the infrared photodiode and infrared receiving transistor of the keyboard key sensing structure of the utility model;
[0018] Figure 2 This is a schematic diagram of the installation of the double-hole rubber ring of the keyboard key sensing structure of the utility model;
[0019] Figure 3 This is a schematic diagram of signal reception simulation of the utility model.
[0020] In the figure:
[0021] 1. Infrared photodiode; 2. Infrared receiving transistor; 3. Double-hole rubber ring. DETAILED DESCRIPTION
[0022] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.
[0023] Existing membrane keyboards are usually composed of a layer of plastic film and a layer of contact film. Input is completed by the change in capacitance between the contact point of the key and the plastic film. Membrane keyboards are usually lighter and therefore easier to carry and move. Membrane keyboards produce very little sound when pressed, making them suitable for use in environments that require quietness.
[0024] Please refer to Figure 1-Figure 3In order to solve the problem of internal moisture causing short circuit and inconvenient fast input, this embodiment proposes a keyboard key sensing structure, which emits light signals through infrared photodiodes, and then reflects them to infrared receiving transistors through keycaps, which receive and convert them into electrical signals to realize key functions. Infrared photodiodes and infrared receiving transistors are used to realize key functions. Even if moisture enters, it will not affect the keyboard function, further avoiding short circuits caused by internal moisture. The infrared sensing technology makes the keyboard's response speed very fast, the trigger stroke is short, and the key signal can be triggered faster to meet the needs of players and professional users who need fast input and operation. The light signal is transmitted unidirectionally, and the input and output ends are completely electrically isolated. The output signal waveform has no fluctuation and is not affected by the outside world, which makes the keyboard more stable during operation and not affected by environmental interference. Due to the use of infrared sensing technology, the keyboard has stronger resistance to electromagnetic interference and can maintain stable performance in various electromagnetic environments. The panel layer is used for identification and keys. The thickness of the panel layer is less than 0.25mm. A surface glue layer for sealing and connection is connected to the panel layer. The thickness of the surface glue layer ranges from 0.05 to 0.15. A circuit layer for realizing key functions is also connected to the surface adhesive layer. The surface adhesive layer closely connects the panel layer and the circuit layer to achieve the effect of sealing and connection. It has high viscosity and anti-aging properties, so that the circuit layer can be waterproof and moisture-proof to avoid short circuit. The circuit layer includes a plurality of first key areas. An infrared photodiode 1 and an infrared receiving transistor 2 are welded at the center of the first key area. The distance between the infrared photodiode 1 and the infrared receiving transistor 2 is 1 mm. The infrared photodiode 1 and the infrared receiving transistor 2 are sleeved with the same double-hole rubber ring 3. The double-hole rubber ring 3 and The infrared photodiode 1 and the infrared receiving transistor 2 are adapted to each other. The infrared photodiode 1 adopts a 0603-size short-wave infrared photodiode with a ball head. The infrared receiving transistor 2 adopts a 0603-size infrared receiving transistor. The infrared photodiode 1 and the infrared receiving transistor 2 are reflow-welded at the center of the first key area. The infrared photodiode 1 and the infrared receiving transistor 2 are covered with a double-hole rubber ring 3. The double-hole rubber ring 3 aligns the double holes of the infrared photodiode 1 and the infrared receiving transistor 2 so that the double-hole rubber ring 3 is fully covered on the infrared photodiode 1 and the infrared receiving transistor 2. The infrared photodiode 1 is on the transistor 2, and does not block the lens of the infrared photodiode 1 and the infrared receiving transistor 2 (the position where the infrared photodiode 1 transmits and the infrared receiving transistor 2 receives), which is used to block the light signal emitted by the infrared photodiode 1 to the edge to avoid signal saturation. The infrared photodiode 1 and the infrared receiving transistor 2 are used to realize the key function. Even if moisture enters, it will not affect the keyboard function, further avoiding the short circuit caused by internal moisture. The infrared photodiode is always in the signal transmission state. When the key is pressed down, the light signal of the infrared photodiode 1 encounters the keycap and is reflected to the infrared receiving transistor 2 to be converted into an electrical signal to realize the key function. In addition, the infrared sensing technology makes the keyboard's response speed very fast, the trigger stroke is short, and the key signal can be triggered faster, meeting the needs of players and professional users who need fast input and operation. The light signal is transmitted unidirectionally, and the input and output ends are completely electrically isolated. The output signal waveform has no fluctuations and is not affected by the outside world. This makes the keyboard more stable during operation and not affected by the environment. Due to the use of infrared sensing technology, the keyboard has a stronger resistance to electromagnetic interference and can maintain stable performance in various electromagnetic environments. .
[0025] As a preferred technical solution of this embodiment, the panel layer includes a plurality of second key areas, and the number and position of the second key areas correspond to the first key areas. The second key areas on the panel layer correspond to the first key areas in both number and position. When the corresponding key in the second key area is pressed, the light signal of the infrared photodiode 1 corresponding to the first key area encounters the keycap and is reflected to the infrared receiving transistor 2 for reception and conversion into an electrical signal, thereby realizing the corresponding key function. The second key area is provided with patterns and texts with logos. The panel layer is usually screen-printed with exquisite patterns and texts on colorless and translucent sheets such as PET and PC with a thickness of less than 0.25 mm. The main function of the panel layer is identification and buttons, so its material needs to have the characteristics of high transparency, high ink adhesion, high elasticity, high toughness, etc. The key keyboard using infrared sensing technology has the advantages of high response speed, strong durability, stability and anti-interference ability, and is suitable for scenarios requiring fast input and stable performance, such as games and office.
[0026] It should be noted that, in this article, the terms "comprises", "includes" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or apparatus.
[0027] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. A keyboard key sensing structure, comprising a panel layer for marking and key pressing, wherein a surface adhesive layer for sealing and connecting is connected to the panel layer, characterized in that: The surface adhesive layer is also connected to a circuit layer for realizing key functions; The circuit layer comprises a plurality of first key zones, wherein an infrared photodiode (1) and an infrared receiving triode (2) are welded at the center of the first key zone, and the infrared photodiode (1) and the infrared receiving triode (2) are sleeved with a same double-hole rubber ring (3).
2. A keyboard key sensing structure according to claim 1, characterized in that: The panel layer includes a plurality of second key areas, the number and position of the second key areas correspond to those of the first key areas, and the second key areas are provided with patterns and texts with logos.
3. A keyboard key sensing structure according to claim 1, characterized in that: The distance between the infrared photodiode (1) and the infrared receiving transistor (2) is 1 mm.
4. A keyboard key sensing structure according to claim 1, characterized in that: The thickness of the panel layer is less than 0.25 mm.
5. The keyboard key sensing structure according to claim 1, characterized in that: The thickness of the surface adhesive layer ranges from 0.05 to 0.
15.
6. A keyboard key sensing structure according to claim 1, characterized in that: The infrared photodiode (1) adopts a 0603-size short-wave infrared photodiode with a ball head, and the infrared receiving transistor (2) adopts a 0603-size infrared receiving transistor.
7. A keyboard key sensing structure according to claim 1, characterized in that: The double-hole rubber ring (3) is compatible with the infrared photodiode (1) and the infrared receiving triode (2).