Apparatus for simultaneous growth of plurality of crystals

Abstract

The utility model provides equipment for simultaneously growing a plurality of crystals. The growth furnace is provided with a furnace chamber, and the top of the furnace chamber is open; the crystal mounting rack is mounted at the upper part of the open end of the growth furnace; a plurality of rotating motors are distributed and mounted on the crystal mounting frame in the circumferential direction, a quartz rod is mounted at the rotating output end of each rotating motor, the quartz rods extend into the furnace chamber, and growth seed crystals are mounted at the ends, extending into the furnace chamber, of the quartz rods. When the equipment is used for processing crystals, a plurality of crystals can simultaneously grow in the same growth furnace, thereby increasing the crystal yield and improving the efficiency of the crystal growth furnace.

Description

Technical Field

[0001] The utility model relates to the technical field of optical processing, in particular to a device for growing multiple crystals simultaneously. Background Art

[0002] The crystal growth furnace is a key equipment for preparing microelectronic materials. It controls the crystallization process of materials through heating and cooling to produce crystals with specific shapes and sizes. The operating principle of the crystal growth furnace is based on the principles of thermodynamics, heat transfer, mass transfer, etc. The material in the furnace is heated to melt, and then the seed crystal guides the growth to form a crystal.

[0003] The molten salt method is a method of dissolving the crystal raw material in a low-melting-point flux at high temperature to form a saturated solution, and then slowly cooling the temperature or evaporating the flux at a constant temperature to make the molten liquid supersaturated, so that the crystals can spontaneously crystallize or grow on seed crystals. The molten salt method can obtain high-quality and large-sized crystals, but one of the main disadvantages is that the crystal growth rate is slow and the growth cycle is long. The crystal growth furnace currently has a single crucible placed in a single furnace body, and a single furnace tube is heated. Each furnace can only produce one crystal, and the crystal output rate is low. Utility Model Content

[0004] The purpose of the utility model is to solve one of the above-mentioned technical problems and provide a device that can be used for growing multiple crystals simultaneously, thereby improving the efficiency of crystal output.

[0005] To achieve the above purpose, the utility model adopts the following technical solutions:

[0006] An apparatus for growing multiple crystals simultaneously, comprising:

[0007] Growth furnace: a furnace chamber is formed, the top of the furnace chamber is open, and a number of crucibles are arranged inside the furnace chamber;

[0008] Crystal mounting rack: installed on the upper part of the opening end of the growth furnace;

[0009] The crystal mounting frame is circumferentially distributed with a plurality of rotating motors, each rotating motor has a quartz rod installed at its rotating output end, the quartz rod extends into the crucible inside the furnace chamber, and a growth seed crystal is installed at one end of the quartz rod extending into the furnace chamber.

[0010] In some embodiments of the utility model, a vertical travel track is provided on the crystal mounting frame, and the rotating motor is installed in the vertical travel track and can travel along the vertical travel track.

[0011] In some embodiments of the utility model, a support frame is further included, the support frame includes a vertical beam and a horizontal beam, the horizontal beam and the vertical beam are installed as a whole, and the crystal mounting frame is installed on the horizontal beam.

[0012] In some embodiments of the utility model, a transverse travel track is provided on the crossbeam, and the crystal mounting frame is installed in the transverse travel track and can move along the transverse travel track.

[0013] In some embodiments of the utility model, a central furnace tube is arranged at the center of the furnace chamber, and the quartz rod is located in a gap cavity between the central furnace tube and the inner wall of the furnace chamber.

[0014] In some embodiments of the utility model, a heat-insulating layer is arranged along the inner wall of the furnace cavity and the outer peripheral wall of the central furnace tube.

[0015] In some embodiments of the utility model, resistance wires are arranged along the side walls of the thermal insulation layer.

[0016] In some embodiments of the utility model, a temperature control meter is also included, the resistance wire is connected to the thermocouple, and the temperature control meter is connected to the thermocouple and the resistance wire.

[0017] In some embodiments of the present invention, a counterweight is installed on one end of the beam away from the crystal mounting frame.

[0018] In some embodiments of the utility model, a furnace cover is further included, which is installed at the opening of the furnace cavity. The furnace cover is provided with a plurality of openings, and the quartz rods are inserted into the furnace cavity through the openings.

[0019] Compared with the prior art, the technical advantages of the utility model are:

[0020] 1. Growing multiple crystals simultaneously in the same growth furnace can increase crystal output and improve the efficiency of the crystal growth furnace.

[0021] 2. The crystal growth furnace structure adopts two sets of heating furnace tubes, the central and the peripheral, for simultaneous heating. Two sets of temperature control systems accurately control the temperature, ensuring the uniformity of the lateral temperature field during crystal growth and improving the optical quality of the crystal.

[0022] 3. The operation method is simple, the cost is low, and it is suitable for industrialization. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0024] Figure 1 A schematic cross-sectional view of the crystal growth device provided by the utility model;

[0025] Figure 2 A schematic diagram of the top view of the crystal growth device provided by the utility model;

[0026] Figure 3 It is a schematic diagram of the structure of the rotating motor installation part;

[0027] In the above figures:

[0028] 1- Growth furnace;

[0029] 2-crystal mounting frame, 201-vertical travel track;

[0030] 3-rotating motor, 301-motor slider;

[0031] 4-Quartz rod;

[0032] 5-Growing seed crystals;

[0033] 6-Speed ​​governor;

[0034] 7-furnace cover;

[0035] 801-vertical beam, 802-cross beam, 803-horizontal walking track;

[0036] 9-Counterweight;

[0037] 10- Insulation layer;

[0038] 11- Crucible;

[0039] 12-center furnace tube;

[0040] 13- resistance wire;

[0041] 14- Temperature control table;

[0042] 15- Thermocouple. DETAILED DESCRIPTION

[0043] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0044] It should be noted that when an element is referred to as being "disposed on", "connected to", or "fixed to" another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or indirectly connected to the other element. In addition, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance.

[0045] The utility model provides a device for growing multiple crystals simultaneously, referring to Figures 1 to 3 , combined with some exemplary embodiments of the utility model, the structure of the device is explained as follows.

[0046] The growth furnace 1 is formed with a furnace chamber, the top of which is open, and a plurality of dry pots 11 are arranged inside the furnace chamber as a space for accommodating crystal growth. A furnace cover 7 is installed at the opening of the furnace chamber.

[0047] The crystal to be grown is mounted on a crystal mounting frame 2, which is mounted on the upper part of the opening end of the growth furnace 1. Several rotating motors 3 are circumferentially distributed on the crystal mounting frame 2, and a quartz rod 4 is fixedly mounted on the rotating output end of each rotating motor 3. The quartz rod 4 has a certain length and extends into the interior of the furnace cavity. A growth seed crystal 5 is mounted on the end of the quartz rod 4 extending into the furnace cavity. The furnace cover 6 needs to be covered during the crystal growth process, so several openings are set on the furnace cover 6. The quartz rod 4 penetrates into the crucible 11 in the furnace cavity through the openings, and a quartz rod 4 is set inside each crucible 11.

[0048] Each rotating motor 3 is controlled by a motor control system. The motor control system includes a speed regulator 6 . The speed regulator is used to control the rotation speed of the rotating motor 3 , thereby controlling the rotation speed of the growing seed crystal 5 .

[0049] Since the position of the growing seed crystal 5 needs to be controlled during the crystal growth process, or the depth of the quartz rods 4 of different lengths need to be controlled to be extended into the furnace chamber, this problem can be solved by adjusting the position of the rotating motor 3. In some embodiments of the utility model, a vertical travel track 201 is provided on the crystal mounting frame 2, and the rotating motor 3 is installed in the vertical travel track 201 through a motor slider 301. The motor slider 301 can move along the vertical travel track 201, thereby driving the rotating motor 3 to move along the vertical travel track 201, and adjusting the height of the rotating motor 3 to adjust the height of the quartz rod 4.

[0050] A support frame is further included on the ground for mounting the crystal mounting frame 2. The support frame includes a vertical beam 801 and a horizontal beam 802. The horizontal beam 802 is installed as a whole with the vertical beam 801. The vertical beam 801 is set on the ground, and the crystal mounting frame 2 is installed on the horizontal beam 802.

[0051] As the number of rotating motors 3 installed on the crystal mounting frame 2 increases, the weight of this end becomes heavier, which may easily cause the supporting structure of the supporting frame to become unstable. In order to solve this problem, a counterweight 9 is installed on the end of the crossbeam 802 away from the crystal mounting frame. The weight of the counterweight 9 is determined according to the number of rotating motors 3.

[0052] In order to design a multi-dimensional growth seed crystal 5 adjustment structure and facilitate the growth of the growth seed crystal 5, in some embodiments of the utility model, a transverse walking track 803 is provided on the beam 802, and the crystal mounting frame is installed in the transverse walking track 803 and can move along the transverse walking track 803.

[0053] The growth of the growth seed crystal 5 requires a high temperature environment, and the temperature of the growth environment needs to be controlled. In order to keep the inside of the furnace chamber warm, a thermal insulation layer 10 can be set on the inner wall of the furnace chamber. A central furnace tube 12 is further provided in the center of the furnace chamber, and a quartz rod is located in the gap cavity between the central furnace tube 12 and the inner wall of the furnace chamber. In order to better control the temperature, in some embodiments of the utility model, a thermal insulation layer 10 is provided along the inner wall of the furnace chamber and the outer peripheral wall of the central furnace tube 12. A resistance wire 13 is provided along the side wall of the thermal insulation layer 10 for heating the inside of the furnace chamber. Resistance wires 13 are respectively provided on one side of the central furnace tube 12 and one side of the inner wall of the furnace chamber so as to evenly heat both sides of the growth seed crystal 5.

[0054] In some embodiments of the utility model, a temperature control meter 14 is further included, the resistance wire 13 is connected to the thermocouple 15, and the temperature control meter is connected to the thermocouple and the resistance wire 13. Furthermore, in order to control the temperature more accurately, two sets of independent temperature control meters 14 can be designed for the resistance wire 13 on one side of the central furnace tube 12 and the resistance wire 13 on one side of the inner wall of the furnace cavity, respectively, so as to form a more reasonable and uniform temperature environment.

[0055] The crystal growth process is achieved by the following technical solution, including the following steps:

[0056] (1) Put the prepared crystal growth raw materials into the crucible 11 and cover the crystal growth furnace cover 7.

[0057] (2) The furnace tubes are heated simultaneously by two sets of resistance wires 13 at the center and the periphery, and two sets of temperature control meters 14 are used to control the temperature accurately, so that the transverse temperature field of the melt in the multiple crucibles 11 in the cavity is at the same temperature, ensuring the symmetry of the temperature field of the furnace body, and the temperature is raised to completely dissolve the raw materials.

[0058] (3) The growth seed crystals 5 of the same size are fixed on the quartz rod 4 and connected to the stepping rotary motor 3 , and the quartz rod 4 with the growth seed crystals 5 fixed thereon is slowly lowered into the growth solution inside the crucible 11 .

[0059] (4) The temperature is lowered to the saturation point temperature, and the temperature is slowly lowered, and multiple rotating motors 3 are used to control the multiple rotating motors 3, and finally multiple crystals are grown.

[0060] During the crystal growth process, two sets of heating furnace tubes, the central and peripheral ones, are used for simultaneous heating, and two sets of temperature control systems are precisely controlled at the same time, so that the lateral temperature field of the melt in multiple crucibles in the furnace chamber is at the same temperature, maintaining good lateral temperature field uniformity for crystal growth, ensuring a relatively stable and symmetrical temperature field, and realizing the simultaneous growth of multiple high-quality single crystals.

[0061] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An apparatus for growing multiple crystals simultaneously, characterized in that: include: Growth furnace: a furnace chamber is formed, the top of the furnace chamber is open, and a number of crucibles are arranged inside the furnace chamber; Crystal mounting rack: installed on the upper part of the opening end of the growth furnace; The crystal mounting frame is circumferentially distributed with a plurality of rotating motors, each rotating motor has a quartz rod installed at its rotating output end, the quartz rod extends into the crucible inside the furnace chamber, and a growth seed crystal is installed at one end of the quartz rod extending into the furnace chamber.

2. The apparatus for simultaneous growth of multiple crystals according to claim 1, characterized in that: The crystal mounting frame is provided with a vertical travel track, and the rotary motor is installed in the vertical travel track and can travel along the vertical travel track.

3. The apparatus for simultaneous growth of multiple crystals according to claim 2, characterized in that: It further comprises a support frame, the support frame comprises a vertical beam and a horizontal beam, the horizontal beam and the vertical beam are installed as a whole, and the crystal mounting frame is installed on the horizontal beam.

4. The apparatus for simultaneous growth of multiple crystals according to claim 3, characterized in that: The crossbeam is provided with a transverse travel track, and the crystal mounting frame is installed in the transverse travel track and can travel along the transverse travel track.

5. The apparatus for simultaneous growth of multiple crystals according to claim 1, characterized in that: A central furnace tube is arranged at the center of the furnace chamber, and the quartz rod is located in a gap cavity between the central furnace tube and the inner wall of the furnace chamber.

6. The apparatus for simultaneous growth of multiple crystals according to claim 5, characterized in that: A heat-insulating layer is arranged along the inner wall of the furnace cavity and the outer peripheral wall of the central furnace tube.

7. The apparatus for simultaneous growth of multiple crystals according to claim 6, characterized in that: Resistance wires are arranged along the side walls of the thermal insulation layer.

8. The apparatus for simultaneous growth of multiple crystals according to claim 7, characterized in that: It also includes a temperature control meter, the resistance wire is connected to the thermocouple, and the temperature control meter is connected to the thermocouple and the resistance wire.

9. The apparatus for simultaneous growth of multiple crystals according to claim 3, characterized in that: A counterweight is installed on one end of the beam away from the crystal mounting frame.

10. The apparatus for simultaneous growth of multiple crystals according to claim 1, characterized in that: It also includes a furnace cover, which is installed at the opening of the furnace cavity. The furnace cover is provided with a plurality of openings, and the quartz rods penetrate into the furnace cavity through the openings.

Images