Discrete device packaging structure

Abstract

The utility model belongs to the technical field of semiconductor devices, and discloses a discrete device packaging structure which comprises a heat dissipation support made of a conductive material, a chip and a plastic package body. The bottom of the chip is provided with a bottom electrode, and the top is provided with a top electrode; the heat dissipation support is provided with a first pin, the bottom of the chip is attached to the top of the heat dissipation support, and the bottom electrode is attached to the top of the heat dissipation support. The discrete device packaging structure further comprises metal connecting pieces, the bottoms of the metal connecting pieces and the tops of the top electrodes are attached and connected in a one-to-one correspondence mode, one end of each metal connecting piece extends out of the heat dissipation support to form a second pin, and the top face of the heat dissipation support, the chip and the portions, located on the heat dissipation support, of the metal connecting pieces are subjected to plastic packaging through the plastic packaging body. Therefore, heat dissipation efficiency can be improved, electrical connection reliability can be enhanced, parasitic inductance and capacitance can be reduced, signal transmission rate can be improved, and packaging height can be reduced.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor devices, and in particular to a discrete device packaging structure. Background Art

[0002] TO (Transistor Outline) packaging is a common device packaging form, which is popular in high-power and high-current applications, mainly due to its good heat dissipation performance. In the existing TO packaging process, a vertical structure chip is usually used, whose drain (or collector) is soldered to the bracket, and the other electrodes are electrically connected to other electrodes of the bracket through the wire bonding process.

[0003] Although the wire bonding process can flexibly solve the electrical connection problem of chips of different sizes, it also brings a series of potential risks and technical defects:

[0004] First, the connection points of wire bonds are susceptible to thermal and mechanical stress. This may cause the connection points to move or fatigue, increasing the chance of electronic package failure. Especially in high-power devices, high thermal stress is more likely to cause the connection points to move or fatigue, making the wire bond structure fragile and increasing the risk of wire breakage.

[0005] Secondly, the signal transmission rate is slow. Due to the long metal lead and small wire diameter, the transmission rate of electrical signals is limited. In addition, the high impedance characteristics of the metal lead can easily cause signal distortion, affecting the quality and integrity of the signal.

[0006] Furthermore, the wire bonding structure has large parasitic inductance and parasitic capacitance problems. Parasitic inductance increases with the reduction of wire diameter and the increase of wire distance; parasitic capacitance changes with the number of wires and the frequency. The denser the wires, the higher the capacitance, and the more obvious the high-frequency suppression effect on the circuit, thereby increasing the interference to the circuit.

[0007] In addition, the existing TO packaging structure has low heat dissipation efficiency. The chip is a three-dimensional structure, but in the existing solution, the chip is only soldered to the heat dissipation bracket on one side, while the other side is directly in contact with the plastic packaging material. Due to the low thermal conductivity of the plastic packaging material, the heat transfer efficiency is slow, which greatly weakens the heat dissipation efficiency when high current and high power devices are working.

[0008] Finally, the wire bonding process takes up a large space. In order to achieve a loop connection between the chip and the substrate or between the chip and the chip, the wire needs to have a high arc height. This brings difficulties to some packages that require ultra-thin size, limiting the miniaturization of the package and the improvement of the integration level.

[0009] In view of the above problems, the existing technology needs to be improved urgently. Utility Model Content

[0010] The purpose of the present application is to provide a discrete device packaging structure that can improve heat dissipation efficiency, enhance electrical connection reliability, reduce parasitic inductance and capacitance, increase signal transmission rate, and reduce packaging height.

[0011] The present application provides a discrete device packaging structure, comprising a heat dissipation support made of conductive material, a chip and a plastic packaging body; a bottom electrode is arranged at the bottom of the chip, and a top electrode is arranged at the top; the heat dissipation support has a first pin, the bottom of the chip is mounted on the top of the heat dissipation support, and the bottom electrode is bonded to the top of the heat dissipation support; the discrete device packaging structure also includes a metal connecting piece, the bottom of the metal connecting piece is bonded and connected to the top of the top electrode in a one-to-one correspondence, and one end of each of the metal connecting pieces extends out of the heat dissipation support to form a second pin, and the plastic packaging body plastic-seales the top surface of the heat dissipation support, the chip and the part of the metal connecting piece located on the heat dissipation support.

[0012] By using a metal connecting sheet instead of traditional wire bonding, the heat dissipation efficiency and the reliability of the electrical connection are improved, the parasitic inductance and capacitance are reduced, the signal transmission rate is increased, and the package height is reduced, which has the advantages of improving the heat dissipation efficiency, enhancing the reliability of the electrical connection, reducing the parasitic inductance and capacitance, increasing the signal transmission rate, and reducing the package height. In addition, the second pin is directly extended from the metal connecting sheet, so that the heat of the chip can be discharged from the top through the second pin, and the process steps such as welding the second pin to the heat dissipation bracket and welding the metal connecting sheet to the second pin can be reduced, simplifying the packaging process.

[0013] Preferably, the bottom electrode comprises a collector or a drain of the chip, and the top electrode comprises other electrodes of the chip.

[0014] Preferably, 1 to 3 top electrodes are provided, and 1 to 3 metal connecting sheets are provided correspondingly.

[0015] Preferably, the metal connecting sheet includes an integrally formed connecting portion and the second pin, and the connecting portion is bonded and connected to the corresponding top electrode and completely covers the corresponding top electrode.

[0016] By adopting an integrally formed metal connecting piece, the present application effectively solves the connection problem between the top electrode of the chip and the metal connecting piece. The integrally formed design eliminates the connection points in traditional wire bonding, reduces the influence of thermal stress and mechanical stress on the connection, improves the reliability of the package, and simplifies the packaging process. The connection portion completely covers the top electrode, which not only increases the contact area, but also improves the current conduction capability and heat dissipation efficiency. As an extension of the metal connecting piece, the second pin can be easily connected to the external circuit, simplifying the packaging structure. This design may also reduce parasitic inductance and capacitance, increase signal transmission rate, and is suitable for high-power and high-frequency applications.

[0017] Preferably, the connecting portion extends outside the chip and is insulated and thermally connected to the top of the heat dissipation bracket.

[0018] The connection part of the metal connecting piece is not only connected to the top electrode of the chip, but also extends outside the chip and is thermally connected to the top of the heat sink. This design can improve the heat dissipation efficiency. The connection part of the metal connecting piece completely covers the top electrode, increasing the contact area, which is conducive to the rapid conduction of heat. The connection part extends outside the chip and is thermally connected to the top of the heat sink, forming an additional heat dissipation channel. In this way, the heat generated by the chip can not only be dissipated through the heat sink at the bottom, but also be conducted to the heat sink through the metal connecting piece on the top, thereby greatly improving the heat dissipation efficiency.

[0019] Preferably, the metal connecting sheet is a copper sheet.

[0020] Preferably, the thickness of the metal connecting sheet does not exceed half of the thickness of the first pin.

[0021] Preferably, a notch is formed on one side of one end of the second pin close to the heat dissipation bracket, and the notch is used to reduce stress when the second pin is bent from the notch.

[0022] Preferably, the notch is an arc-shaped notch.

[0023] Preferably, the bottom surface of the heat dissipation bracket is exposed, or the plastic sealing body also plastic seals the bottom surface of the heat dissipation bracket.

[0024] Beneficial effects: The discrete device packaging structure provided by the present application improves the heat dissipation efficiency and the reliability of the electrical connection, reduces the parasitic inductance and capacitance, improves the signal transmission rate, and reduces the packaging height by using a metal connecting sheet instead of the traditional wire bonding. It has the advantages of improving the heat dissipation efficiency, enhancing the reliability of the electrical connection, reducing the parasitic inductance and capacitance, improving the signal transmission rate, and reducing the packaging height. In addition, the second pin is directly extended from the metal connecting sheet, so that the heat of the chip can be extracted from the top through the second pin, and the process steps such as welding the second pin to the heat dissipation bracket and welding the metal connecting sheet to the second pin can be reduced, simplifying the packaging process. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a diagram of the internal structure of the discrete device packaging structure provided in an embodiment of the present application.

[0026] Figure 2 A cross-sectional view of a discrete device packaging structure provided in an embodiment of the present application.

[0027] Explanation of reference numerals: 1. heat dissipation bracket; 101. first pin; 2. chip; 201. top electrode; 3. plastic package; 4. metal connecting piece; 401. second pin; 402. connecting part; 403. notch. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0029] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0030] TO package is a common device packaging form with good heat dissipation performance and is popular in high-power and high-current applications. However, there are some technical problems that need to be solved when applying existing TO packaging technology. These problems mainly originate from the wire bonding process, including low connection reliability, slow signal transmission, large parasitic parameters, low heat dissipation efficiency and large space occupation.

[0031] Specifically, the connection points of wire bonding are susceptible to thermal and mechanical stress, causing the connection points to move or fatigue, increasing the risk of electronic packaging failure. The metal leads are long and small in diameter, resulting in slow signal transmission rates, and high impedance can easily cause signal distortion. In addition, the wire bonding structure will also produce large parasitic inductance and parasitic capacitance, affecting the high-frequency performance of the circuit. In terms of heat dissipation, since the chip is soldered to the metal bracket on one side and the other side is directly in contact with the plastic packaging material with low thermal conductivity, the heat dissipation efficiency is greatly reduced. Finally, wire bonding requires a higher arc height, which increases the overall size of the package and is not conducive to achieving ultra-thin packaging.

[0032] In view of the problems existing in the existing TO packaging, such as low connection reliability, slow signal transmission, large parasitic parameters, low heat dissipation efficiency and large space occupation, the present application proposes an innovative discrete device packaging structure.

[0033] Please refer to Figure 1-Figure 2 In some embodiments of the present application, a discrete device packaging structure includes a heat dissipation bracket 1 made of conductive material, a chip 2 and a plastic packaging body 3; a bottom electrode is provided at the bottom of the chip 2, and a top electrode 201 is provided at the top; the heat dissipation bracket 1 has a first pin 101, the bottom of the chip 2 is mounted on the top of the heat dissipation bracket 1, and the bottom electrode is bonded to the top of the heat dissipation bracket 1; the discrete device packaging structure also includes a metal connecting piece 4, the bottom of the metal connecting piece 4 is bonded and connected to the top of the top electrode 201 in a one-to-one correspondence, and one end of each metal connecting piece 4 extends out of the heat dissipation bracket 1 to form a second pin 401, and the plastic packaging body 3 plastic-seales the top surface of the heat dissipation bracket 1, the chip 2 and the part of the metal connecting piece 4 located on the heat dissipation bracket 1 (that is, the part whose downward projection falls into the heat dissipation bracket 1).

[0034] By using the metal connecting piece 4 to replace the traditional wire bonding, the heat dissipation efficiency and the reliability of the electrical connection are improved, the parasitic inductance and capacitance are reduced, the signal transmission rate is increased, and the package height is reduced, which has the advantages of improving the heat dissipation efficiency (the metal connecting piece 4 can expand the heat dissipation area of ​​the top electrode 201, thereby providing heat dissipation efficiency), enhancing the reliability of the electrical connection, reducing the parasitic inductance and capacitance, improving the signal transmission rate, and reducing the package height. In addition, the second pin 401 is directly extended from the metal connecting piece 4, so that the heat of the chip 2 can be extracted from the top through the second pin 401 (in the traditional packaging structure, the lead diameter is small, and it is difficult to transfer the heat of the chip 2 to the pin. In comparison, the metal connecting piece 4 of the present application can more efficiently extract the heat of the chip 2 from the second pin 401, thereby further improving the heat dissipation efficiency), and can reduce the process steps such as welding the second pin 401 with the heat dissipation bracket 1 and welding the metal connecting piece 4 with the second pin 401, thereby simplifying the packaging process.

[0035] The chip 2 is a vertical structure chip, wherein the bottom electrode includes the collector or drain of the chip 2 , and the top electrode 201 includes other electrodes of the chip 2 .

[0036] The bottom electrode, as the collector or drain of the chip 2, can be directly bonded to the metal coating on the top of the heat dissipation bracket 1 to achieve electrical connection. This design simplifies the connection method of the bottom electrode and improves the connection reliability. The top electrode 201 includes other electrodes of the chip 2, such as the base or source, and can be electrically connected to the outside through the metal connecting sheet 4. This design avoids the shortcomings of the traditional wire bonding process and improves the connection stability and reliability.

[0037] The chip 2 may be a vertically structured diode, a bipolar transistor, a power MOSFET or an IGBT.

[0038] The number and specific type of the top electrodes 201 are determined by the specific type of the chip 2. Generally, 1 to 3 top electrodes 201 are provided, and 1 to 3 metal connecting pieces 4 are provided correspondingly. For example, for a diode (such as an SBD diode), one top electrode 201 may be provided, and one metal connecting piece 4 may be provided correspondingly; for a bipolar transistor, two top electrodes 201 may be provided, and two corresponding metal connecting pieces 4 may be provided to connect the two top electrodes 201 respectively; for a MOSFET or an IGBT, three top electrodes 201 may be provided, and three corresponding metal connecting pieces 4 may be provided to connect the three top electrodes 201 respectively.

[0039] In some embodiments, see Figure 1The metal connecting piece 4 includes an integrally formed connecting portion 402 and a second pin 401 . The connecting portion 402 is fitted and connected to the corresponding top electrode 201 and completely covers the corresponding top electrode 201 .

[0040] By adopting an integrally formed metal connecting piece 4, the present application effectively solves the connection problem between the top electrode 201 of the chip 2 and the metal connecting piece 4. The integrally formed design eliminates the connection points in the traditional wire bonding, reduces the influence of thermal stress and mechanical stress on the connection, improves the reliability of the package, and simplifies the packaging process. The connecting portion 402 completely covers the top electrode 201, which not only increases the contact area, but also improves the current conduction capability and heat dissipation efficiency. The second pin 401, as an extension of the metal connecting piece 4, can be easily connected to an external circuit, simplifying the packaging structure. This design may also reduce parasitic inductance and capacitance, improve signal transmission rate, and is suitable for high-power and high-frequency applications.

[0041] Specifically, the connection portion 402 of the metal connection sheet 4 can be designed in a variety of shapes, such as rectangular, circular or other geometric shapes, to adapt to the shapes of the top electrodes 201 of different chips 2. The thickness of the connection portion 402 can be adjusted according to actual needs. The area of ​​the connection portion 402 can be slightly larger than the area of ​​the top electrode 201 of the chip 2 to ensure full coverage and provide sufficient connection margin.

[0042] The second pin 401 can be designed into a variety of shapes, such as a straight line, an L shape, or an S shape, to meet different packaging requirements and external connection methods. The length of the second pin 401 can be adjusted according to the packaging size and external connection requirements, and can generally be between 5 mm and 30 mm. The width of the second pin 401 can be designed according to the requirements of the current carrying capacity, and can generally be selected between 0.5 mm and 2.5 mm.

[0043] The metal connecting sheet 4 can be processed by stamping, etching or laser cutting. The connection between the connecting portion 402 and the top electrode 201 of the chip 2 can be welded, crimped or bonded with conductive adhesive. Selecting a suitable connection method can further improve the reliability and conductivity of the connection.

[0044] In some preferred embodiments, see Figure 1 The connecting portion 402 extends outside the chip 2 and is insulated and thermally connected to the top of the heat dissipation bracket 1 .

[0045] The connecting portion 402 of the metal connecting piece 4 is not only connected to the top electrode 201 of the chip 2, but also extends outside the chip 2 and is insulated and thermally connected to the top of the heat dissipation bracket 1. This design can improve the heat dissipation efficiency. The connecting portion 402 of the metal connecting piece 4 completely covers the top electrode 201, increases the contact area, and is conducive to the rapid conduction of heat. The connecting portion 402 extends outside the chip 2 and is insulated and thermally connected to the top of the heat dissipation bracket 1, forming an additional heat dissipation channel. In this way, the heat generated by the chip 2 can not only be dissipated through the heat dissipation bracket 1 at the bottom, but also can be conducted to the heat dissipation bracket 1 through the metal connecting piece 4 at the top, thereby greatly improving the heat dissipation efficiency.

[0046] Furthermore, the insulating thermal connection between the connection part 402 and the top of the heat dissipation bracket 1 can be achieved in a variety of ways, such as bonding with an insulating thermal conductive adhesive or filling with an insulating thermal conductive filler (filling between the portion of the connection part 402 extending outside the chip 2 and the top of the heat dissipation bracket 1), etc. The choice of this connection method can be determined according to specific application requirements and manufacturing processes to ensure the best thermal conductivity and structural stability.

[0047] The design of the present application has produced a significant effect in solving the heat dissipation problem. Through the heat conduction connection between the connection portion 402 and the heat dissipation bracket 1, a closed heat dissipation loop is formed, which greatly improves the heat conduction efficiency. This design is particularly suitable for high-current and high-power devices, and can effectively prevent the performance degradation or failure of the chip 2 due to overheating.

[0048] The material selection of the metal connecting sheet 4 is crucial to its performance. Materials with excellent electrical conductivity, such as copper, aluminum or their alloys, can be selected. Among them, copper has excellent electrical conductivity and heat dissipation, and is a preferred choice (i.e., the metal connecting sheet 4 is preferably a copper sheet). In order to further improve the connection reliability, a layer of metal such as gold, silver or nickel can be plated on the surface of the metal connecting sheet 4 to enhance its anti-oxidation ability and welding performance.

[0049] Preferably, the thickness of the metal connecting sheet 4 does not exceed half of the thickness of the first pin 101 . Thus, the thickness of the second pin 401 does not exceed half of the thickness of the first pin 101 .

[0050] The present application optimizes the overall performance of the package structure by limiting the thickness of the metal connecting sheet 4. Specifically, the thickness of the metal connecting sheet 4 does not exceed half the thickness of the first pin 101. This design takes into account multiple aspects:

[0051] First, controlling the thickness of the metal connecting sheet 4 helps to reduce the overall height of the packaging structure. On the premise of ensuring sufficient mechanical strength and conductive performance, a thinner metal connecting sheet 4 can significantly reduce the height of the packaging structure, thereby increasing the packaging density.

[0052] Secondly, the limitation of the thickness of the metal connecting sheet 4 also takes into account the need to bend the pins of discrete devices when in use. By controlling the thickness of the metal connecting sheet 4, the second pin 401 can be bent more easily. This not only improves the flexibility of the packaging structure, but also reduces the influence of the deformation of the second pin 401 on the welding quality between the electrodes of the chip 2 and the heat dissipation bracket 1 and the metal connecting sheet 4 when bending.

[0053] Third, the reduction in thickness of the metal connecting sheet 4 can reduce the amount of material used, thereby reducing costs, which may bring significant economic benefits in large-scale production.

[0054] It should be noted that the selection of the thickness of the metal connecting sheet 4 needs to strike a balance between multiple factors. For example, if the thickness is too thin, it may affect the mechanical strength and conductivity, while if it is too thick, it may increase the package height and affect heat dissipation. Therefore, the present application limits the thickness of the metal connecting sheet 4 to no more than half the thickness of the first pin 101, and this range is the result of a trade-off.

[0055] In some embodiments, see Figure 1 A notch 403 is formed on one side of one end of the second pin 401 close to the heat dissipation bracket 1 , and the notch 403 is used to reduce the stress when the second pin 401 is bent at the notch 403 .

[0056] When using discrete devices, it is often necessary to bend the second pin 401. A notch 403 is opened on one side of the end of the second pin 401 close to the heat dissipation bracket 1. The main function of this notch 403 is to reduce the stress generated by the second pin 401 when bending, and further reduce the influence of the deformation of the second pin 401 when bending on the welding quality of each electrode of the chip 2 and the heat dissipation bracket 1 and the metal connecting plate 4. Therefore, when the second pin 401 needs to be bent, it can be bent at the position of the notch 403.

[0057] Specifically, the notch 403 can be designed in a variety of shapes, such as arc, V-shaped or square. Among them, the arc-shaped notch is a preferred embodiment (such as Figure 1 As shown in FIG. 4 , the arc-shaped structure can better disperse stress and reduce stress concentration points. The size and depth of the notch 403 can be determined according to the material, thickness and expected bending angle of the second pin 401.

[0058] The position of the notch 403 is usually set at the end of the second pin 401 close to the heat dissipation bracket 1, because in practical applications, this position is most likely to be bent. By setting the notch 403 at this position, the stress concentration during bending can be effectively reduced, and the risk of the second pin 401 breaking or deforming can be reduced.

[0059] The heat dissipation bracket 1 may be made of copper or other metals.

[0060] The outer surfaces of the first pin 101 and the second pin 401 may be provided with a protective coating (such as an electroplated tin layer or other metal layer) to prevent oxidation of the first pin 101 and the second pin 401 and to ensure good wettability when each pin is connected to an external circuit by soldering.

[0061] In some possible implementations, the bottom surface of the heat dissipation bracket 1 is exposed.

[0062] The exposed bottom surface of the heat dissipation bracket 1 allows heat to be directly dissipated from the bottom surface to the external environment, greatly improving the heat dissipation efficiency. Furthermore, a protective coating (such as an electroplated tin layer or other metal layer) can be provided on the exposed portion of the bottom surface of the heat dissipation bracket 1, which can prevent oxidation of the bottom surface of the heat dissipation bracket 1 on the one hand, and ensure good wettability of the heat dissipation bracket 1 to the solder when the heat dissipation bracket 1 is soldered and connected in subsequent use on the other hand.

[0063] In some other possible implementations, the plastic sealing body 3 also plastic seals the bottom surface of the heat dissipation bracket 1. This structure can improve the insulation performance of the product.

[0064] In this document, relational terms such as first and second, etc. are used merely to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0065] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A discrete device packaging structure, comprising a heat dissipation support (1) made of a conductive material, a chip (2) and a plastic package (3); the bottom of the chip (2) is provided with a bottom electrode, and the top of the chip (201) is provided with a top electrode; the heat dissipation support (1) has a first pin (101), the bottom of the chip (2) is mounted on the top of the heat dissipation support (1), and the bottom electrode is in contact with the top of the heat dissipation support (1); characterized in that: The discrete device packaging structure further comprises a metal connecting sheet (4), the bottom of the metal connecting sheet (4) being fitted and connected to the top of the top electrode (201) in a one-to-one correspondence, and one end of each of the metal connecting sheets (4) extending out of the heat dissipation support (1) to form a second pin (401), and the plastic encapsulation body (3) encapsulates the top surface of the heat dissipation support (1), the chip (2) and the portion of the metal connecting sheet (4) located on the heat dissipation support (1).

2. The discrete device packaging structure according to claim 1, characterized in that: The bottom electrode comprises a collector or a drain of the chip (2), and the top electrode (201) comprises other electrodes of the chip (2).

3. The discrete device packaging structure according to claim 2, characterized in that: The number of the top electrodes (201) is 1 to 3, and the number of the metal connecting sheets (4) is correspondingly 1 to 3.

4. The discrete device packaging structure according to claim 1, characterized in that: The metal connecting sheet (4) comprises an integrally formed connecting portion (402) and the second pin (401); the connecting portion (402) is fitted and connected to the corresponding top electrode (201) and completely covers the corresponding top electrode (201).

5. The discrete device packaging structure according to claim 4, characterized in that: The connecting portion (402) extends outside the chip (2) and is insulated and thermally connected to the top of the heat dissipation bracket (1).

6. The discrete device packaging structure according to claim 1, characterized in that: The metal connecting sheet (4) is a copper sheet.

7. The discrete device packaging structure according to claim 1, characterized in that: The thickness of the metal connecting sheet (4) does not exceed half the thickness of the first pin (101).

8. The discrete device packaging structure according to claim 1, characterized in that: A notch (403) is provided on one side of one end of the second pin (401) close to the heat dissipation bracket (1), and the notch (403) is used to reduce the stress when the second pin (401) is bent from the notch (403).

9. The discrete device packaging structure according to claim 8, characterized in that: The notch (403) is an arc-shaped notch (403).

10. The discrete device packaging structure according to claim 1, characterized in that: The bottom surface of the heat dissipation support (1) is exposed, or the plastic sealing body (3) also plastic seals the bottom surface of the heat dissipation support (1).

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