Abrasion-resistant pressure sensor chip lead structure

Abstract

The utility model discloses a wear-resistant pressure sensor chip lead structure, which comprises a silicon core body, electrodes and four groups of bridge resistors, the electrodes are arranged on the surface of the silicon core body close to four sides, the bridge resistors are arranged on the surface of the silicon core body close to the center, and the electrodes are arranged on the surface of the silicon core body close to the center. A connecting lead is arranged between the bridge circuit resistor and the electrode, the bridge circuit resistor is located between the ends of the connecting lead, thick boron is injected into the silicon body through an ion injection method, the formed lead is located in the silicon body, the hidden danger that the connecting lead between the bridge circuit resistor and the electrode is abraded off can be effectively avoided, the abrasion resistance is improved, and the service life is prolonged. And meanwhile, the chemical stability and corrosion resistance of the concentrated boron lead are better than those of an aluminum lead, so that the reliability and the service life of the pressure sensor can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of pressure sensor components, in particular to a wear-resistant and break-resistant pressure sensor chip lead structure. Background Art

[0002] A pressure sensor is a device or apparatus that can sense pressure signals and convert them into usable output electrical signals according to certain rules. A pressure sensor is usually composed of a pressure sensitive element and a signal processing unit. It generally has specific structures such as bridge resistors, motors, and leads inside it, and is widely used.

[0003] The existing internal chip lead assembly of the pressure sensor has the following disadvantages when in use: the connecting leads between the bridge resistor and the electrode of the existing pressure sensor chip generally adopt an aluminum lead structure. Since the aluminum lead is a lead structure formed on the silicon surface during assembly, there is a risk of wear and tear during actual use. When the pressure sensor is under pressure, the external pressure is likely to cause changes in the internal induced resistance, thereby affecting the accuracy and stability of the pressure sensor. For this reason, we propose a wear-resistant pressure sensor chip lead structure. Utility Model Content

[0004] The main purpose of the utility model is to provide a wear-resistant and breakage-resistant pressure sensor chip lead structure. By using high-purity concentrated boron to prepare the lead structure, when combined with other components, the hidden danger of the connecting lead between the bridge resistor and the electrode being worn off can be effectively avoided, the wear resistance is improved, and the problems in the background technology can be effectively solved.

[0005] In order to achieve the above purpose, the technical solution adopted by the utility model is:

[0006] A wear-resistant and break-resistant pressure sensor chip lead structure includes a silicon core, electrodes and bridge resistors. Electrodes are arranged near the four sides of the silicon core surface, bridge resistors are arranged near the center of the silicon core surface, and there are four groups of bridge resistors. Connecting leads are arranged between the bridge resistors and the electrodes, and the bridge resistors are located between the ends of the connecting leads.

[0007] Furthermore, the connecting lead wire is made of high-purity concentrated boron; using high-purity concentrated boron to prepare the connecting lead wire can avoid the hidden danger of being worn off.

[0008] Furthermore, the connecting lead and the silicon crystal <110> The direction is at a 45° angle; it can effectively reduce the stress generated by the pressure sensor when it is subjected to pressure, reduce the change of the pressure-sensitive resistance caused by pressure, and thus improve the accuracy and stability of the pressure sensor.

[0009] Compared with the prior art, the utility model has the following beneficial effects: a bridge resistor and an electrode are arranged on the surface of the silicon core, a connecting lead is arranged between the bridge resistor and the electrode, the connecting lead uses high-purity concentrated boron as a raw material, and a large beam ion implantation method is used during preparation to implant the high-purity concentrated boron into the silicon core, so that the silicon core obtains a specified total amount of doped particles in a limited area, and meets the specified impurity depth and the specified longitudinal impurity concentration distribution requirements, and the high-purity concentrated boron is redistributed so that the impurities form a Gaussian distribution in the silicon body, and on the basis of the total amount of impurities implanted by the ions, the total amount of impurities is redistributed according to the specified longitudinal concentration distribution requirements under the conditions of high temperature and inert gas protection, so as to ensure that the boron atoms are evenly distributed in the electrode area, so as to facilitate the formation of a good alloy in the lead hole, and the prepared connecting lead is in a good relationship with the silicon crystal. <110> The angle of 45° formed in the direction can effectively reduce the stress generated by the pressure sensor when it is subjected to pressure, reduce the change of the pressure-sensitive resistance caused by pressure, thereby improving the accuracy and stability of the pressure sensor. Concentrated boron is injected into the silicon body by ion implantation. The formed lead is in the silicon body, which can effectively avoid the hidden danger of the connecting lead between the bridge resistor and the electrode being worn off, and improves the wear resistance. At the same time, the chemical stability and corrosion resistance of the concentrated boron lead are better than those of the aluminum lead, which helps to improve the reliability and life of the pressure sensor. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 The utility model is a schematic diagram of the overall structure of a wear-resistant and break-resistant pressure sensor chip lead structure.

[0011] In the figure: 1. Silicon core; 2. Connecting leads; 3. Bridge resistors; 4. Electrodes. DETAILED DESCRIPTION

[0012] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further described below in conjunction with specific implementation methods.

[0013] like Figure 1 As shown, a wear-resistant and break-resistant pressure sensor chip lead structure includes a silicon core 1, an electrode 4 and a bridge resistor 3. The surface of the silicon core 1 is provided with electrodes 4 near the four sides, the surface of the silicon core 1 is provided with bridge resistors 3 near the center, and the bridge resistors 3 are four groups. A connecting lead 2 is provided between the bridge resistor 3 and the electrode 4, and the bridge resistor 3 is located between the ends of the connecting lead 2.

[0014] The connecting lead 2 is made of high-purity concentrated boron. <110> The direction is 45°; using high-purity concentrated boron to prepare the connecting lead 2 can avoid the hidden danger of wear and tear, can effectively reduce the stress generated by the pressure sensor when it is subjected to pressure, and reduce the change of the pressure-sensitive resistance caused by pressure, thereby improving the accuracy and stability of the pressure sensor.

[0015] It should be noted that the utility model is a wear-resistant and break-resistant pressure sensor chip lead structure. During preparation, a bridge resistor 3 and an electrode 4 are arranged on the surface of a silicon core 1, and a connecting lead 2 is arranged between the bridge resistor 3 and the electrode 4. The connecting lead 2 is made of high-purity concentrated boron as a raw material. During preparation, a large beam ion implantation method is used to implant 1×10 18 / cm 3 The silicon core 1 is injected into the silicon core 1, so that the silicon core 1 obtains a specified total amount of doped particles in a limited area and meets the specified impurity depth and the specified longitudinal impurity concentration distribution requirements. The high-purity concentrated boron is redistributed so that the impurities form a Gaussian distribution in the silicon body. On the basis of the total amount of impurities injected by ionization, the total amount of impurities is redistributed according to the specified longitudinal concentration distribution requirements under the conditions of high temperature and inert gas protection to ensure that the boron atoms are evenly distributed in the electrode 4 area, so that the lead hole forms a good alloy. The prepared connecting lead 2 is connected to the silicon crystal. <110> The angle of 45° formed in the direction can effectively reduce the stress generated by the pressure sensor when it is subjected to pressure, reduce the change of the pressure-sensitive resistance caused by pressure, thereby improving the accuracy and stability of the pressure sensor. Concentrated boron is injected into the silicon body by ion implantation, and the formed lead is in the silicon body, which can effectively avoid the hidden danger of the connecting lead 2 between the bridge resistor 3 and the electrode 4 being worn off, thereby improving the wear resistance. At the same time, the chemical stability and corrosion resistance of the concentrated boron lead are better than those of the aluminum lead, which helps to improve the reliability and life of the pressure sensor.

[0016] The above shows and describes the basic principle and main features of the utility model and the advantages of the utility model. Those skilled in the art should understand that the utility model is not limited by the above embodiments. The above embodiments and descriptions are only for explaining the principle of the utility model. Without departing from the spirit and scope of the utility model, the utility model may have various changes and improvements, which fall within the scope of the utility model to be protected. The scope of protection claimed by the utility model is defined by the attached claims and their equivalents.

Claims

1. A wear-resistant pressure sensor chip lead structure, comprising a silicon core (1), characterized in that: It also comprises electrodes (4) and bridge resistors (3), wherein the electrodes (4) are arranged near the four sides of the surface of the silicon core (1), and the bridge resistors (3) are arranged near the center of the surface of the silicon core (1), and the bridge resistors (3) are four groups, and connecting leads (2) are arranged between the bridge resistors (3) and the electrodes (4), and the bridge resistors (3) are located between the ends of the connecting leads (2).

2. The anti-wear and breakage type pressure sensor chip lead structure according to claim 1, characterized in that: The connecting lead (2) is made of high-purity concentrated boron.

3. The anti-wear and breakage type pressure sensor chip lead structure according to claim 1, characterized in that: The connecting lead (2) is connected to the silicon crystal <110> The direction is 45°.

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