Display panel and display device

Abstract

The utility model discloses a display panel and a display device. The display panel comprises a first transistor and a light detector, the first transistor comprises a first active part, a first source electrode and a first drain electrode, the first source electrode and the first drain electrode are connected to the first active part, and the light detector comprises a light sensing electrode, a first transmission electrode and a second transmission electrode, the display panel further comprises a first active layer and a first conductive layer. The first active layer comprises a first active part and a light sensing electrode. The first conductive layer is arranged on one side of the first active layer and comprises a first source electrode, a first drain electrode, a first transmission electrode and a second transmission electrode; wherein the material of the light induction electrode comprises indium gallium zinc oxide; according to the utility model, the optical detector can be integrated in the display panel without adding additional technological processes, so that the technological processes can be reduced and the technological cost can be reduced on the basis that the display panel realizes the optical detection function.

Description

Technical Field

[0001] The utility model relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] With the development of display technology, display panels have been widely used in people's lives, such as display screens of mobile phones and computers. With the progress of life and the development of technology, people have higher and higher requirements for the display performance of display panels, and also require display panels to have rich functions and high-quality human-computer interaction. Panel manufacturers also need to improve the competitiveness of display panels. For example, people are increasingly concerned about the impact of ultraviolet radiation on human health, and need display panels to be able to detect the intensity of ultraviolet radiation through ultraviolet light detectors so that people can take measures to protect themselves, including warning to go out and control the time of special working environments, reduce the burning damage of ultraviolet radiation to human skin and eyes, and enhance people's physical health.

[0003] However, currently, an external ultraviolet light detector is often added to the display to enable the display to have the ultraviolet light detection function. However, the external ultraviolet light detector increases the process and cost of the display and is not conducive to the demand for thinness and lightness of the display. Utility Model Content

[0004] The embodiments of the utility model provide a display panel and a display device, which can integrate a light detector inside the display panel, reduce process steps, and lower process costs.

[0005] The present invention provides a display panel, comprising a first transistor and a photodetector, wherein the first transistor comprises a first active portion and a first source and a first drain connected to the first active portion, and the photodetector comprises a photosensitive electrode and a first transmission electrode and a second transmission electrode connected to the photosensitive electrode;

[0006] The display panel further includes:

[0007] A first active layer, comprising the first active portion and the photosensitive electrode;

[0008] A first conductive layer, disposed on one side of the first active layer, and comprising the first source electrode, the first drain electrode, the first transmission electrode, and the second transmission electrode;

[0009] Wherein, the material of the light sensing electrode includes indium gallium zinc oxide.

[0010] In one embodiment of the present utility model, the first transistor further includes a first gate, and the photodetector further includes a control electrode;

[0011] The display panel also includes a substrate and a second conductive layer arranged on the substrate, the first active layer is arranged on a side of the second conductive layer away from the substrate, the second conductive layer includes the first gate and the control electrode, the first gate is located between the first active portion and the substrate, and the control electrode is located between the photosensitive electrode and the substrate.

[0012] In one embodiment of the present utility model, the first transistor further includes a second gate;

[0013] The display panel further includes a third conductive layer disposed on a side of the first active layer away from the second conductive layer. The third conductive layer includes the second gate. The second gate is located on a side of the first active portion away from the first gate.

[0014] In an embodiment of the present invention, the orthographic projection of the third conductive layer on the substrate and the orthographic projection of the light sensing electrode on the substrate are arranged not to overlap.

[0015] In an embodiment of the utility model, the display panel further comprises a first polarizer arranged on a side of the first active layer away from the substrate, a first opening is formed in the first polarizer, and the first opening is arranged in alignment with the light sensing electrode.

[0016] In one embodiment of the utility model, the display panel also includes a plurality of functional layers arranged between the first active layer and the first polarizer, at least some of the plurality of functional layers are provided with a second opening, and the second opening is arranged in alignment with the light-sensitive electrode.

[0017] In an embodiment of the present invention, the display panel includes a display area and a non-display area adjacent to the display area, the first transistor is disposed in the display area, and the light detector is disposed in the non-display area.

[0018] In one embodiment of the present invention, the light absorption wavelength of the light-sensitive electrode is greater than or equal to 10 nm and less than or equal to 400 nm.

[0019] In an embodiment of the present invention, the display panel further includes a second transistor, the second transistor including a second active portion and a second source and a second drain connected to the second active portion;

[0020] The material of the first active part and the material of the light sensing electrode both include indium gallium zinc oxide, and the material of the second active part includes polysilicon.

[0021] According to the above-mentioned purpose of the present invention, an embodiment of the present invention further provides a display device, which includes the display panel.

[0022] The beneficial effects of the utility model are as follows: the utility model integrates the photodetector inside the display panel, and the light sensing electrode of the photodetector is arranged in the same layer as the first active part of the first transistor, and the first transmission electrode and the second transmission electrode of the photodetector are arranged in the same layer as the first source electrode and the first drain electrode of the first transistor, so that the photodetector can be integrated into the display panel without adding any additional process steps, thereby reducing the process steps and lowering the process cost on the basis of realizing the light detection function of the display panel; in addition, indium gallium zinc oxide is used to form the light sensing electrode in the utility model, and indium gallium zinc oxide itself can absorb ultraviolet light but does not absorb visible light, infrared light and other light, therefore, the utility model can realize the ultraviolet light detection function of the photodetector without adding any additional filter film layer, which can further save process steps and reduce process costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The technical solutions and other beneficial effects of the present invention will be made apparent by describing in detail the specific embodiments of the present invention in conjunction with the accompanying drawings.

[0024] Figure 1 A schematic diagram of the structure of a display panel provided by an embodiment of the utility model;

[0025] Figure 2 Another schematic diagram of the structure of a display panel provided by an embodiment of the utility model;

[0026] Figures 3 to 12 A schematic diagram of the manufacturing process of a display panel provided by an embodiment of the utility model;

[0027] Fig.13 A schematic diagram of the structure of a display device provided in an embodiment of the utility model. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the utility model.

[0029] The disclosure below provides many different embodiments or examples for realizing different structures of the utility model. In order to simplify the disclosure of the utility model, the components and settings of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the utility model. In addition, the utility model may repeat reference numbers and / or reference letters in different examples, and such repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the utility model provides various specific examples of processes and materials, but those of ordinary skill in the art may be aware of the application of other processes and / or the use of other materials.

[0030] Please refer to Figure 1 An embodiment of the utility model provides a display panel, which includes a first transistor T1 and a photodetector Tg. The first transistor T1 includes a first active portion 21 and a first source 31 and a first drain 32 connected to the first active portion 21. The photodetector Tg includes a photosensitive electrode 22 and a first transmission electrode 33 and a second transmission electrode 34 connected to the photosensitive electrode 22.

[0031] Furthermore, the display panel also includes a first active layer 20 and a first conductive layer 30; the first active layer 20 includes a first active portion 21 and a photosensitive electrode 22; the first conductive layer 30 is arranged on one side of the first active layer 20, and includes a first source electrode 31, a first drain electrode 32, a first transmission electrode 33 and a second transmission electrode 34; wherein the material of the photosensitive electrode 22 includes indium gallium zinc oxide.

[0032] In the embodiment of the utility model, the photodetector Tg is integrated into the display panel, and the light sensing electrode 22 of the photodetector Tg is arranged in the same layer as the first active portion 21 of the first transistor T1, and the first transmission electrode 33 and the second transmission electrode 34 of the photodetector Tg are arranged in the same layer as the first source electrode 31 and the first drain electrode 32 of the first transistor T1, so that the photodetector can be integrated into the display panel without adding any additional process steps, thereby reducing the process steps and lowering the process cost on the basis of realizing the light detection function of the display panel; in addition, indium gallium zinc oxide is used to form the light sensing electrode 22 in the utility model, and indium gallium zinc oxide itself can absorb ultraviolet light but does not absorb visible light, infrared light and other light, therefore, the embodiment of the utility model can realize the ultraviolet light detection function of the photodetector Tg, and does not need to add any additional filter film layer, which can further save process steps and reduce process costs.

[0033] For details, please refer to Figure 1 In the embodiment of the present utility model, the display panel includes a substrate 10, a plurality of insulating layers disposed on the substrate 10, and thin film transistors coated in the plurality of insulating layers.

[0034] Among them, the display panel includes a buffer layer 61, a first gate insulating layer 62, a second gate insulating layer 63, a third gate insulating layer 64, an interlayer dielectric layer 65, a planarizing layer 66 and an interlayer insulating layer 67 which are sequentially arranged on the substrate 10; the array substrate 10 also includes a first transistor T1 and a photodetector Tg encapsulated in the above-mentioned film layers.

[0035] In one embodiment, the first transistor T1 includes a first active portion 21, a first gate 41, a second gate 51, a first source 31 and a first drain 32; the photodetector Tg includes a light sensing electrode 22, a control electrode 42, a first transmission electrode 33 and a second transmission electrode 34; wherein the first source 31 and the first drain 32 are respectively connected to opposite ends of the first active portion 21, and the first gate 41 and the second gate 51 are located on opposite sides of the first active portion 21 in a direction perpendicular to the substrate 10; the first transmission electrode 33 and the second transmission electrode 34 are respectively connected to opposite ends of the light sensing electrode 22, and the control electrode 42 is located on one side of the light sensing electrode 22 in a direction perpendicular to the substrate 10.

[0036] The display panel is described in detail below in conjunction with the film layers where each transistor device is located.

[0037] In one embodiment, the display panel also includes a first active layer 20 arranged on the second gate insulating layer 63 and covered by the third gate insulating layer 64, and a first conductive layer 30 arranged on the interlayer dielectric layer 65 and covered by the planarization layer 66; wherein the first active layer 20 includes a first active portion 21 and a photosensitive electrode 22, that is, in the embodiment of the utility model, the first active portion 21 and the photosensitive electrode 22 are arranged on the same layer to avoid the phenomenon of an increase in the photomask due to the setting of the photodetector Tg.

[0038] In one embodiment, the light absorption wavelength of the light sensing electrode 22 is greater than or equal to 10 nm and less than or equal to 400 nm. Therefore, the light detector provided in the embodiment of the utility model is used to detect ultraviolet light to detect the intensity of ultraviolet light and reduce ultraviolet light damage to users.

[0039] In one embodiment, the material of the first active layer 20 includes indium gallium zinc oxide (IGZO), that is, the material of the first active portion 21 and the material of the light-sensitive electrode 22 are both indium gallium zinc oxide; it should be noted that indium gallium zinc oxide itself has the property of absorbing ultraviolet light, and does not absorb visible light, infrared light and other light. Therefore, in the embodiment of the utility model, the light-sensitive electrode 22 and the first active portion 21 made of indium gallium zinc oxide are prepared in the same layer, which can realize the function of ultraviolet light detection, and there is no need to add a filter structure in the display panel, which further reduces the process steps of the display panel and saves the process cost of the display panel.

[0040] Furthermore, the first conductive layer 30 includes a first source electrode 31, a first drain electrode 32, a first transmission electrode 33 and a second transmission electrode 34. The first source electrode 31 and the first drain electrode 32 respectively pass through the interlayer dielectric layer 65 and the third gate insulating layer 64 and are connected to the opposite ends of the first active portion 21. The first transmission electrode 33 and the second transmission electrode 34 respectively pass through the interlayer dielectric layer 65 and the third gate insulating layer 64 and are connected to the opposite ends of the photosensitive electrode 22.

[0041] In the embodiment of the utility model, the first source 31, the first drain 32, the first transmission electrode 33 and the second transmission electrode 34 are arranged in the same layer, so as to further avoid the phenomenon of increasing the photomask due to the arrangement of the photodetector Tg, so as to further save the process cost of the display panel.

[0042] In one embodiment, the display panel also includes a second conductive layer 40 disposed on the first gate insulating layer 62 and covered by the second gate insulating layer 63, and the second conductive layer 40 includes a first gate 41 and a control electrode 42, wherein the first gate 41 is located between the first active portion 21 and the substrate 10, and the control electrode 42 is located between the photosensitive electrode 22 and the substrate 10; in the embodiment of the utility model, the first gate 41 and the control electrode 42 are arranged on the same layer, further avoiding the phenomenon of an increase in the photomask due to the setting of the photodetector Tg, so as to further save the process cost of the display panel.

[0043] As mentioned above, in the embodiment of the utility model, the photodetector Tg is integrated inside the display panel to realize the ultraviolet light detection function of the display panel, and the various devices of the photodetector Tg are prepared on the same layer as the various devices of the first transistor T1, so that the setting of the photodetector Tg can be realized without adding an additional mask, thereby saving the process cost of the display panel; further, since the first active portion 21 of the first transistor T1 in the display panel is prepared using indium gallium zinc oxide, and indium gallium zinc oxide itself has the property of absorbing ultraviolet light and does not absorb visible light, infrared light and other light, therefore, in the embodiment of the utility model, the photodetector Tg and the first transistor T1 are prepared using the same process, so that the function of ultraviolet light detection can be realized, and there is no need to add a filter structure in the display panel, thereby further reducing the process steps of the display panel and saving the process cost of the display panel.

[0044] In one embodiment, the display panel further includes a third conductive layer 50 disposed on the third gate insulating layer 64 and covered by the interlayer dielectric layer 65 , and the third conductive layer 50 includes a second gate 51 of the first transistor T1 , and the second gate 51 is located on a side of the first active portion 21 away from the first gate 41 .

[0045] It should be noted that, in the embodiment of the utility model, the first transistor T1 is used for signal transmission in the display function, and has high electrical requirements, so a dual-gate structure is required, that is, the first transistor T1 has a first gate 41 and a second gate 51, while the photodetector Tg does not require high electrical requirements. Therefore, in the embodiment of the utility model, according to the electrical requirements and light input requirements of the photodetector Tg, the photodetector Tg is set to a single-gate structure, that is, the photodetector Tg only includes a control electrode 42, and the control electrode 42 is set between the light sensing electrode 22 and the substrate 10, then the side of the light sensing electrode 22 away from the substrate 10 is not blocked by the gate, which can effectively increase the amount of light input and improve the sensitivity and accuracy of the photodetector Tg.

[0046] In one embodiment, the orthographic projection of the third conductive layer 50 on the substrate 10 and the orthographic projection of the light sensing electrode 22 on the substrate 10 are arranged not to overlap, so as to prevent the third conductive layer 50 from affecting the amount of light entering the light sensing electrode 22 .

[0047] In one embodiment, the display panel also includes a second transistor T2, which includes a second active portion 71, a third gate 43, and a second source 52 and a second drain 53 connected to the second active portion 71; wherein the third gate 43 is located in the second conductive layer 40, and the second source 52 and the second drain 53 are located in the third conductive layer 50, thereby further reducing the number of masks and reducing the process cost of the display panel.

[0048] It should be noted that the display panel provided by the embodiment of the present invention adopts a low temperature polysilicon oxide (LTPO) structure, that is, the material of the second active portion 71 includes polysilicon.

[0049] In one embodiment, the display panel includes a display area AA and a non-display area BA adjacent to the display area AA, and the first transistor T1 is located in the display area AA, the second transistor T2 and the photodetector Tg are both located in the non-display area BA, and the second transistor T2 may be located in the GOA circuit area of ​​the display panel, and the photodetector Tg may be located in the border area on the peripheral side of the display panel.

[0050] Further, in one embodiment of the present invention, please refer to Figure 2 The display panel is a liquid crystal display panel. Specifically, the display panel provided by the embodiment of the utility model further includes a pixel electrode 73 arranged on the planar layer 66 and covered by the interlayer insulating layer 67 , and a common electrode 72 arranged on the interlayer insulating layer 67 .

[0051] In one embodiment, the pixel electrode 73 is connected to the first transistor T1 through the planar layer 66 , and the common electrode 72 may be connected to the second transistor T2 through the interlayer insulating layer 67 , the planar layer 66 , and the interlayer dielectric layer 65 .

[0052] The display panel also includes a liquid crystal layer (not shown in the figure) arranged on the side of the common electrode 72 away from the substrate 10, and a color filter substrate located on the side of the liquid crystal layer away from the common electrode 72. The color filter substrate includes an opposing substrate 81, a color filter layer 83 arranged on the side of the opposing substrate 81 close to the common electrode 72, and a first polarizer 82 arranged on the side of the opposing substrate 81 away from the color filter layer 83; and the liquid crystal layer can be located between the color filter layer 83 and the common electrode 72.

[0053] In one embodiment, a first opening 101 is provided in the first polarizer 82, and the first opening 101 is arranged in alignment with the light sensing electrode 22 in a direction perpendicular to the substrate 10, thereby effectively increasing the amount of light entering the light sensing electrode 22 and improving the sensitivity and accuracy of the light detector Tg.

[0054] In addition, the display panel may further include a second polarizer disposed on a side of the substrate 10 away from the color filter substrate, which is not shown in the figure.

[0055] Furthermore, the display panel includes a plurality of functional layers arranged between the first polarizer 82 and the first active layer 20, and a second opening 102 is opened in at least some of the plurality of functional layers. The second opening 102 and the light sensing electrode 22 are aligned with each other in a direction perpendicular to the substrate 10, thereby further increasing the amount of light entering the light sensing electrode 22 and improving the sensitivity and accuracy of the light detector Tg.

[0056] In one embodiment, the multiple functional layers may include a color filter layer 83, an interlayer insulating layer 67, a planarizing layer 66, an interlayer dielectric layer 65 and a third gate insulating layer 64; and in this embodiment, the second opening 102 may pass through the color filter layer 83 and the planarizing layer 66; it can be understood that the second opening 102 may also pass through other film layers in the multiple functional layers, which can be selected according to actual needs and is not limited here.

[0057] In another embodiment of the utility model, the display panel can also be an organic light emitting diode display panel, and the first polarizer 82 is located on the side of the first active layer 20 away from the substrate 10, and is a circular polarizer, which can be used to reduce reflection and improve the display effect of the display panel. Similarly, the first polarizer 82 is also provided with a first opening 101 to increase the amount of light entering the photosensitive electrode 22; further, a second opening 102 can also be provided in the multiple functional layers located between the first polarizer 82 and the first active layer 20 to further increase the amount of light entering the photosensitive electrode 22.

[0058] It should be noted that, since the first opening 101 is opened in the first polarizer 82 of the display panel, the first polarizer 82 will lose its polarization effect at the position of the first opening 101, affecting the display effect of the display panel. Therefore, in the embodiment of the utility model, the light detector Tg is arranged in the non-display area BA, and the first opening 101 is also located in the non-display area BA, which will not affect the light output of the display panel, thereby ensuring the display effect of the display panel.

[0059] As mentioned above, in the embodiment of the utility model, the photodetector Tg is integrated inside the display panel to realize the ultraviolet light detection function of the display panel, and the various devices of the photodetector Tg are prepared on the same layer as the various devices of the first transistor T1, so that the setting of the photodetector Tg can be realized without adding an additional mask, thereby saving the process cost of the display panel; further, since the first active portion 21 of the first transistor T1 in the display panel is prepared by indium gallium zinc oxide, and indium gallium zinc oxide itself has the property of absorbing ultraviolet light and does not absorb visible light and infrared light, therefore, in the embodiment of the utility model, the photodetector Tg and the first transistor T1 are prepared by the same process, so that the function of ultraviolet light detection can be realized, and there is no need to add a filter structure in the display panel, which further reduces the process steps of the display panel and saves the process cost of the display panel; in addition, in the embodiment of the utility model, a first opening 101 and a second opening 102 are formed above the light sensing electrode 22 to increase the amount of light entering the light sensing electrode 22, thereby improving the sensitivity and accuracy of the photodetector Tg.

[0060] In addition, please combine Figure 1 , Figures 3 to 12 The embodiment of the utility model further provides a method for manufacturing a display panel, and the display panel is the display panel described in the above embodiment.

[0061] The manufacturing method of the display panel comprises the following steps:

[0062] A substrate 10 is provided, and the substrate 10 may be a glass substrate.

[0063] A buffer layer 61 is formed on the substrate 10 .

[0064] An amorphous silicon layer is formed on the buffer layer 61 , and then an excimer laser annealing (ELA) process is performed on the amorphous silicon layer to transform the amorphous silicon layer into a polycrystalline silicon layer.

[0065] Next, the polysilicon layer is patterned to obtain the second active portion 71, as shown in FIG. Figure 3 shown.

[0066] A first gate insulating layer 62 is formed to cover the second active portion 71 .

[0067] Then, a first metal layer is formed on the first gate insulating layer 62 , and the first metal layer is patterned to obtain a second conductive layer 40 . The second conductive layer 40 includes a first gate 41 , a control electrode 42 and a third gate 43 .

[0068] The area of ​​the second active portion 71 not covered by the third gate 43 is ion doped by a self-alignment process to form an N+ doped area. Then, the third gate 43 is further etched to further reduce the size of the third gate 43 to expose a portion of the second active portion 71, and the area is ion doped to form an N- doped area. Figure 4 shown.

[0069] The second gate insulating layer 63 is formed to cover the second conductive layer 40 .

[0070] Next, a patterned first active layer 20 is formed on the second gate insulating layer 63, and the first active layer 20 includes a first active portion 21 and a light sensing electrode 22, and the first active portion 21 is located on a side of the first gate 41 away from the substrate 10, and the light sensing electrode 22 is located on a side of the control electrode 42 away from the substrate 10, as shown in FIG. Figure 5 shown.

[0071] A third gate insulating layer 64 is formed to cover the first active layer 20, and holes are opened in the third gate insulating layer 64, the second gate insulating layer 63, and the first gate insulating layer 62 to expose a portion of the upper surface of the second active portion 71. Figure 6 shown.

[0072] Then, a second metal layer is formed on the third gate insulating layer 64, and the second metal layer is patterned to form a third conductive layer 50, and the third conductive layer 50 includes a second gate 51, a second source 52 and a second drain 53, and the second gate 51 is located on the side of the first active part 21 away from the substrate 10, and the second source 52 and the second drain 53 are connected to the second active part 71 through a via hole, as shown in FIG. Figure 7 shown.

[0073] An interlayer dielectric layer 65 covering the third conductive layer 50 is formed, and holes are opened in the interlayer dielectric layer 65 and the third gate insulating layer 64 to expose a portion of the upper surface of the first active portion 21 and the light sensing electrode 22. Figure 8 shown.

[0074] Next, a third metal layer is formed on the interlayer dielectric layer 65, and the third metal layer is patterned to obtain a first conductive layer 30, and the first conductive layer 30 includes a first source electrode 31, a first drain electrode 32, a first transmission electrode 33 and a second transmission electrode 34, the first source electrode 31 and the first drain electrode 32 are connected to the first active portion 21 through a via hole, and the first transmission electrode 33 and the second transmission electrode 34 are connected to the light sensing electrode 22 through the via hole, as shown in FIG. Fig. 9 shown.

[0075] A planar layer 66 is formed covering the first conductive layer 30, and a hole is formed in the planar layer 66 to expose a portion of the upper surface of the first drain electrode 32 and the interlayer dielectric layer 65, and a second opening 102 is formed above the light sensing electrode 22, such as Fig.10 shown.

[0076] Then, a pixel electrode 73 is formed on the planar layer 66, and the pixel electrode 73 is connected to the first drain electrode 32 through a via hole. Fig.11 shown.

[0077] An interlayer insulating layer 67 covering the pixel electrode 73 is formed, the interlayer insulating layer 67 covers the inner wall of the second opening 102, and the interlayer insulating layer 67, the planar layer 66, and the interlayer dielectric layer 65 are opened to expose a portion of the upper surface of the second source electrode 52, as shown in FIG. Fig.12 shown.

[0078] Next, a common electrode 72 is formed on the interlayer insulating layer 67, and the common electrode 72 can be connected to the second source electrode 52 through a via hole, as shown in FIG. Figure 1 shown.

[0079] In one embodiment, the material of the pixel electrode 73 and the common electrode 72 may include a transparent conductive material, such as an indium tin oxide (ITO) material.

[0080] In addition, please refer to Fig.13 The embodiment of the utility model further provides a display device 90, which includes a display panel 900, and the display panel 900 can be the display panel described in the above embodiment.

[0081] In one embodiment, the display device is a liquid crystal display, and the display device 90 may further include a backlight module, and the display panel 900 is disposed on the light emitting side of the backlight module.

[0082] In another embodiment, the display device may also be an organic light emitting diode display.

[0083] In summary, in the embodiment of the utility model, the photodetector Tg is integrated inside the display panel to realize the ultraviolet light detection function of the display panel, and the various devices of the photodetector Tg are prepared on the same layer as the various devices of the first transistor T1, so that the setting of the photodetector Tg can be realized without adding an additional mask, thereby saving the process cost of the display panel; further, since the first active portion 21 of the first transistor T1 in the display panel is prepared using indium gallium zinc oxide, and indium gallium zinc oxide itself has the property of absorbing ultraviolet light and does not absorb visible light, infrared light and other light, therefore, in the embodiment of the utility model, the photodetector Tg and the first transistor T1 are prepared by the same process, so that the function of ultraviolet light detection can be realized, and there is no need to add a filter structure in the display panel, which further reduces the process steps of the display panel and saves the process cost of the display panel; in addition, in the embodiment of the utility model, a first opening 101 and a second opening 102 are formed above the light sensing electrode 22 to increase the amount of light entering the light sensing electrode 22, thereby improving the sensitivity and accuracy of the photodetector Tg.

[0084] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0085] The above is a detailed introduction to a display panel and a display device provided in an embodiment of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the technical solution and core idea of ​​the present invention. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that: The invention comprises a first transistor and a photodetector, wherein the first transistor comprises a first active portion and a first source and a first drain connected to the first active portion, and the photodetector comprises a photosensitive electrode and a first transmission electrode and a second transmission electrode connected to the photosensitive electrode; The display panel further includes: A first active layer, comprising the first active portion and the photosensitive electrode; A first conductive layer, disposed on one side of the first active layer, and comprising the first source electrode, the first drain electrode, the first transmission electrode, and the second transmission electrode; Wherein, the material of the light sensing electrode is indium gallium zinc oxide.

2. The display panel according to claim 1, characterized in that: The first transistor further includes a first gate, and the photodetector further includes a control electrode; The display panel also includes a substrate and a second conductive layer arranged on the substrate, the first active layer is arranged on a side of the second conductive layer away from the substrate, the second conductive layer includes the first gate and the control electrode, the first gate is located between the first active portion and the substrate, and the control electrode is located between the photosensitive electrode and the substrate.

3. The display panel according to claim 2, characterized in that: The first transistor further includes a second gate; The display panel further includes a third conductive layer disposed on a side of the first active layer away from the second conductive layer. The third conductive layer includes the second gate. The second gate is located on a side of the first active portion away from the first gate.

4. The display panel according to claim 3, characterized in that: The orthographic projection of the third conductive layer on the substrate and the orthographic projection of the light sensing electrode on the substrate are arranged so as not to overlap.

5. The display panel according to claim 2, characterized in that: The display panel further comprises a first polarizer disposed on a side of the first active layer away from the substrate, a first opening is formed in the first polarizer, and the first opening is aligned with the light sensing electrode.

6. The display panel according to claim 5, characterized in that: The display panel further includes a plurality of functional layers disposed between the first active layer and the first polarizer, and a second opening is formed in at least some of the plurality of functional layers, and the second opening is aligned with the light-sensitive electrode.

7. The display panel according to claim 1, 5 or 6, characterized in that: The display panel includes a display area and a non-display area adjacent to the display area. The first transistor is disposed in the display area, and the light detector is disposed in the non-display area.

8. The display panel according to claim 1, characterized in that: The light absorption wavelength of the photosensitive electrode is greater than or equal to 10 nm and less than or equal to 400 nm.

9. The display panel according to claim 1, characterized in that: The display panel further includes a second transistor, the second transistor including a second active portion and a second source and a second drain connected to the second active portion; The material of the first active part is indium gallium zinc oxide, and the material of the second active part is polysilicon.

10. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 9.

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