Equipment for wet cleaning and etching

Abstract

The utility model provides equipment for wet cleaning and etching. The equipment comprises a liquid conveying pipeline, a box body, a heating device and a spraying device, one end of the liquid conveying pipeline is connected with a chemical solution supply device, the other end of the liquid conveying pipeline is connected with the box body, and the chemical solution supply device conveys a chemical solution into the box body through the liquid conveying pipeline; the heating device is used for heating the chemical solution in the box body; and the spraying device is connected with the box body and is used for spraying the heated chemical solution to the wafer. According to the utility model, the box body is arranged between the spraying device and the liquid conveying pipeline to store the chemical solution, and the heating device is utilized to heat the chemical solution in the box body, so that the chemical solution sprayed to the wafer by the spraying device reaches a set temperature value, the rate of chemical reaction is guaranteed, and the chemical reaction efficiency is improved. And the condition of non-uniform etching or incomplete cleaning is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing, in particular to a device for wet cleaning and etching. Background Art

[0002] There are many wet cleaning / etching steps in the process of wafer processing. Chemical etching (also known as wet etching) uses chemical solutions to directly chemically corrode the unprotected parts of the workpiece. Chemical cleaning / etching equipment is usually used to clean / etch the wafer. Single-wafer cleaning / etching machines generally use the method of rotary etching. The wafer is in a high-speed rotating state. The delivery pipeline is used to transport the cleaning / etching chemical solution, and the chemical solution is sprayed onto the wafer through the nozzle, but there are often cases of incomplete cleaning or uneven etching. Moreover, when the chemical solution reaches the nozzle through the delivery pipeline, there will be heat loss, so that the temperature cannot reach the set value, resulting in a low etching rate or the cleaning function does not meet the requirements, and the uniformity and production capacity do not meet the requirements.

[0003] In view of this, it is necessary to propose a device for wet cleaning and etching to solve the above problems. Utility Model Content

[0004] The utility model aims to provide a device for wet cleaning and etching, so as to improve the problems of incomplete cleaning or uneven etching in existing chemical cleaning / etching devices.

[0005] The utility model provides a device for wet cleaning and etching, comprising: an infusion pipeline, a box, a heating device and a spray device; one end of the infusion pipeline is connected to a chemical solution supply device and the other end is connected to the box, and the chemical solution supply device transports the chemical solution into the box through the infusion pipeline; the heating device is used to heat the chemical solution in the box; the spray device is connected to the box and is used to spray the heated chemical solution onto the wafer.

[0006] In a possible embodiment, the equipment also includes a monitoring device and a controller; the monitoring device is arranged in the process chamber and is used to detect the temperature of the sprayed chemical solution in real time; the controller is controlled and connected to the monitoring device and the heating device, and the controller is used to adjust the heating temperature of the heating device according to the temperature of the sprayed chemical solution.

[0007] In a possible embodiment, the monitoring device includes an infrared transmitter and an infrared receiver arranged in the process chamber, the infrared transmitter and the infrared receiver are set corresponding to the spraying position of the chemical solution, and the infrared light emitted by the infrared transmitter is partially absorbed by the sprayed chemical solution and then received by the infrared receiver; the controller is also used to calculate the temperature of the sprayed chemical solution based on the absorption of the infrared light by the chemical solution.

[0008] In a possible embodiment, there are a plurality of infrared transmitters arranged at intervals, and there are a plurality of infrared receivers arranged in a one-to-one correspondence with the infrared transmitters.

[0009] In a possible embodiment, the spray device includes at least one spray nozzle arranged above the wafer placement position, and the spray range of the spray nozzle is adjustable; the monitoring device is also used to detect the spray concentration in real time; the controller is also used to adjust the spray range and spray amount of the spray nozzle according to the spray concentration.

[0010] In a possible embodiment, there are a plurality of spray nozzles arranged in an array and evenly spaced apart to cover the wafer placement position.

[0011] In a possible embodiment, the spray device also includes a spray seat, a liquid inlet is provided at the top of the spray seat and a plurality of liquid outlets are provided at intervals at the bottom, a channel is formed between the liquid inlet and the liquid outlets; and a spray nozzle is provided at each liquid outlet.

[0012] In a possible embodiment, the device further includes a gas pipeline having one end connected to a gas supply device and the other end connected to the box, and the gas supply device delivers inert gas into the box through the gas pipeline.

[0013] In a possible embodiment, the heating device may be an electric heating wire, an electric heating plate or an electric heating tube; and / or, the heating device is disposed close to the box body or in contact with the outer wall of the box body.

[0014] In a possible embodiment, the device further includes a hollow and sealed shell, and the shell is disposed outside the heating device and the box body.

[0015] In a possible embodiment, the device further includes a suck-back valve disposed on the infusion pipeline, and the suck-back valve is used to suck back the chemical solution when spraying is stopped.

[0016] The beneficial effect of the equipment for wet cleaning and etching provided by the utility model is that: the box for storing chemical solution is arranged between the spray device and the infusion pipeline, and the chemical solution in the box is heated by the heating device so that the chemical solution sprayed by the spray device to the wafer reaches the set temperature value, so as to ensure the rate of chemical reaction and avoid uneven etching or incomplete cleaning. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the equipment used for wet cleaning and etching of the utility model.

[0018] Figure 2 It is a schematic diagram of a spray device in the equipment for wet cleaning and etching of the utility model.

[0019] Figure 3 It is a schematic diagram of the spray nozzle in the equipment for wet cleaning and etching of the utility model before and after the spray range is increased.

[0020] Explanation of the reference numerals: liquid infusion pipeline 110; box body 120; heating device 130; spray device 140; spray nozzle 141; spray seat 142; liquid inlet 1421; liquid outlet 1422; channel 1423; monitoring device 150; infrared transmitter 151; infrared receiver 152; controller 160; gas pipeline 170; shell 180; process chamber 200; wafer 300. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solution and advantages of the embodiments of the utility model clearer, the technical solution in the embodiments of the utility model will be described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0022] In the semiconductor manufacturing process, wet etching and wet cleaning are two key process steps. Wet etching uses the etching solution to react chemically with the material to be etched to remove the part to be etched, thereby forming a structure with a specific pattern on the material to be etched. Wet cleaning mainly achieves the purpose of cleaning by chemically reacting or dissolving the chemical solution with the pollutants. At present, due to the long delivery pipeline, the heat loss of the chemical solution often occurs, which in turn affects the effect and uniformity of wafer cleaning and etching.

[0023] In view of the problems existing in the prior art, the embodiments of the present invention provide a device for wet cleaning and etching. Figure 1The device includes: an infusion pipeline 110, a box 120, a heating device 130 and a spraying device 140. One end of the infusion pipeline 110 is connected to the chemical solution supply device and the other end is connected to the box 120. The chemical solution supply device delivers the chemical solution into the box 120 through the infusion pipeline 110. The heating device 130 is used to heat the chemical solution in the box 120. The spraying device 140 is connected to the box 120 and is used to spray the heated chemical solution onto the wafer 300.

[0024] In this embodiment, the box 120 is arranged near the spray device 140 to store the chemical solution. The chemical solution does not directly enter the spray device 140 through the infusion pipeline 110, but first enters the box 120. The chemical solution in the box 120 is heated by the heating device 130 to ensure that the chemical solution is heated first and then sprayed from the spray device 140 to compensate for the heat loss caused by the chemical solution in the longer pipeline transportation process, thereby maintaining the chemical solution at a suitable temperature, ensuring the etching rate of the chemical solution, ensuring the uniformity of etching and cleaning of the wafer 300, and improving the etching and cleaning effects.

[0025] In a preferred embodiment, see Figure 1 The device further comprises a monitoring device 150 and a controller 160. The monitoring device 150 is arranged in the process chamber 200 and is used to detect the temperature of the sprayed chemical solution in real time. The controller 160 is connected to the monitoring device 150 and the heating device 130. The controller 160 is used to adjust the heating temperature of the heating device 130 according to the temperature of the sprayed chemical solution. Preferably, the controller 160 is a signal processor, and the housing of the monitoring device 150 is made of corrosion-resistant material.

[0026] In this embodiment, a monitoring and feedback adjustment mechanism is formed by the monitoring device 150 and the controller 160. The monitoring device 150 detects the temperature of the sprayed chemical solution in real time. If the temperature of the sprayed chemical solution is lower than the set temperature, the controller 160 controls the heating device 130 to increase the heating temperature. If the temperature of the sprayed chemical solution is higher than the set temperature, the controller 160 controls the heating device 130 to lower the heating temperature. The monitoring device 150 and the controller 160 can accurately control the temperature of the sprayed chemical solution to ensure the etching rate of the chemical solution.

[0027] In a specific embodiment, see Figure 1The monitoring device 150 includes an infrared transmitter 151 and an infrared receiver 152 disposed in the process chamber 200. The infrared transmitter 151 and the infrared receiver 152 are disposed corresponding to the spraying position of the chemical solution. The infrared light emitted by the infrared transmitter 151 is partially absorbed by the sprayed chemical solution and then received by the infrared receiver 152. The controller 160 is also used to calculate the temperature of the sprayed chemical solution according to the absorption of the infrared light by the chemical solution.

[0028] In this embodiment, the infrared emitter 151 emits infrared light, and when the infrared light passes through the sprayed chemical solution, part of it will be absorbed by the chemical solution. The infrared receiver 152 receives the infrared light and converts it into an electrical signal, which is then transmitted to the controller 160. The controller 160 performs infrared spectrum analysis according to a preset algorithm to calculate the temperature of the sprayed chemical solution.

[0029] In a preferred embodiment, see Figure 1 The spray device 140 includes at least one spray nozzle 141 disposed above the wafer 300. The spray range of the spray nozzle 141 is adjustable. The monitoring device 150 is also used to detect the spray concentration in real time. The controller 160 is also used to adjust the spray range and spray amount of the spray nozzle 141 according to the spray concentration. Figure 3 The schematic diagrams shown are of the spray range of the spray nozzle 141 before and after the spray range is enlarged. By adjusting the nozzle size of the spray nozzle 141, the spray range of the spray nozzle 141 can be adjusted.

[0030] In this embodiment, the spray nozzle 141 can atomize the liquid into fine droplets. The atomization effect allows the chemical solution to be distributed in the process chamber 200 in the form of a spray, thereby improving the uniformity of the chemical solution spraying. The controller 160 performs infrared spectrum analysis based on the infrared signal received by the infrared receiver 152, that is, analyzes the absorption of the infrared light by the chemical solution, and then calculates the spray concentration in combination with a specific algorithm. If the spray concentration is lower than the set concentration, the controller 160 will increase the spray range and spray amount of the spray nozzle 141. If the spray concentration is higher than the set concentration, the controller 160 will reduce the spray range and spray amount of the spray nozzle 141. The monitoring device 150 and the controller 160 can accurately control the spray concentration, thereby controlling the etching rate of the chemical solution.

[0031] In addition, the diameters of the wafers 300 currently include 6 inches, 8 inches, and 12 inches, etc. By adjusting the spray range of the spray nozzle 141, the requirements of different wafer 300 sizes can also be met. For small-sized wafers 300, the spray range of the spray nozzle 141 can be reduced, and for large-sized wafers 300, the spray range of the spray nozzle 141 can be increased to meet the coverage requirements of the wafers 300. On the one hand, it can avoid the waste of the chemical solution due to the excessively large spray range of the chemical solution, and on the other hand, it can avoid the etching and cleaning effects due to the excessively small spray range of the chemical solution.

[0032] In a specific embodiment, see Figure 1 , there are several infrared emitters 151 and they are arranged at intervals, there are several infrared receivers 152 and they are arranged one by one with the infrared emitters 151. Preferably, there are several or several rows of spray nozzles 141. It can be understood that a plurality of groups of the infrared emitters 151 and the infrared receivers 152 are arranged at different positions above the wafer 300 to detect the spray concentration at different positions. The controller 160 can adjust the spray range and spray amount of the corresponding spray nozzle 141 according to the spray concentration data detected by each group of the infrared emitters 151 and the infrared receivers 152 to ensure that the chemical solution can be evenly and fully sprayed onto the wafer 300 to improve the etching and cleaning effects.

[0033] In another specific embodiment, see Figure 1 and Figure 2 , the spray nozzles 141 are multiple and arranged in an array and evenly spaced to cover the placement position of the wafer 300. In this embodiment, the spray nozzles 141 arranged in an array and evenly spaced allow the sprayed chemical solution to evenly cover the surface of the wafer 300, avoiding overspraying in some areas or underspraying in some areas, so as to ensure the uniformity of etching and cleaning of the wafer 300.

[0034] In a specific embodiment, see Figure 1 and Figure 2 The spray device 140 further includes a spray seat 142, the top of the spray seat 142 is provided with a liquid inlet 1421 and the bottom is provided with a plurality of liquid outlets 1422 at intervals, a channel 1423 is formed between the liquid inlet 1421 and the liquid outlet 1422, the plurality of channels 1423 are radially distributed, and a spray nozzle 141 is provided at each liquid outlet 1422. Preferably, the spray seat 142 can be tubular or plate-shaped.

[0035] In this embodiment, a plurality of liquid outlets 1422 are provided, and a spray nozzle 141 is provided at each of the liquid outlets 1422 to increase the spray range of the entire spray device 140, thereby ensuring that the sprayed chemical solution can fully and effectively cover the entire wafer 300 area, thereby improving the uniformity of etching and cleaning.

[0036] In a preferred embodiment, see Figure 1 The device further includes a gas pipeline 170 connected to the gas supply device at one end and connected to the box 120 at the other end, and the gas supply device delivers an inert gas into the box 120 through the gas pipeline 170. Preferably, the inert gas can be an inert gas that does not react with the chemical solution, such as nitrogen or ozone.

[0037] In this embodiment, the gas supply device is used to fill the box 120 with inert gas through the gas pipeline 170. Under the action of the gas pressure of the inert gas, the spray force of the chemical solution is enhanced, so that the chemical solution is sprayed in a finer mist form, thereby improving the uniformity of etching and cleaning.

[0038] In some specific embodiments, see Figure 1 The heating device 130 may be an electric heating wire, an electric heating plate or an electric heating tube, and / or the heating device 130 is disposed close to the box 120 or is attached to the outer wall of the box 120. In this embodiment, the heating device 130 generates heat to transfer the heat to the surface of the box 120, thereby heating the box 120, and the chemical solution in the box 120 exchanges heat with the box 120, thereby heating the chemical solution.

[0039] In a preferred embodiment, see Figure 1 The device further includes a hollow and sealed shell 180, and the shell 180 is disposed outside the heating device 130 and the box 120. In this embodiment, by arranging the shell 180 outside the heating device 130 and the box 120, the heating device 130 and the box 120 are isolated from the external environment, thereby reducing the impact of the external environment on the box 120 and reducing the heat loss.

[0040] Preferably, a heat insulating layer is provided on the surface of the shell 180, and the heat insulating layer is made of a heat insulating material to further reduce heat loss.

[0041] In a specific embodiment, the device further comprises a suckback valve provided on the infusion pipeline 110, and the suckback valve is used to suck back the chemical solution when the spraying stops. In this embodiment, when the spraying process stops, the suckback valve will start the suckback function to suck back the chemical solution remaining in the infusion pipeline 110. Through the suckback effect, leakage can be effectively prevented after the spraying stops.

[0042] The technical effects of the equipment for wet cleaning and etching of the utility model are described in detail below.

[0043] 1. The design of the heating device 130 compensates for the heat loss of the chemical solution during the transmission process of the infusion pipeline 110. The chemical solution is heated and then sprayed by the spraying device 140, so that the sprayed chemical solution reaches the set temperature value to ensure the etching rate of the chemical solution and avoid uneven etching or incomplete cleaning.

[0044] 2. The temperature of the sprayed chemical solution is detected in real time by the monitoring device 150, and the heating temperature of the heating device 130 is feedback-adjusted in combination with the controller 160, thereby achieving precise control of the temperature of the chemical solution and ensuring uniformity of etching and cleaning of the wafer 300.

[0045] 3. The controller 160 can individually adjust the spray range and spray volume of each of the spray nozzles 141. The monitoring device 150 detects the spray concentration in real time, and the controller 160 feedback-adjusts the corresponding spray nozzle 141, thereby achieving precise control of the spray concentration. In addition, the spray nozzle 141 can be partially adjusted according to different process requirements, thereby adjusting the cleaning effect of different areas of the wafer 300 to ensure etching uniformity.

[0046] Although the embodiments of the utility model are described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are within the scope and spirit of the utility model described in the claims. Moreover, the utility model described herein may have other embodiments and may be implemented or realized in a variety of ways. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with ordinary skills in the field to which the utility model belongs. The words "including" and the like used herein mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

Claims

1. A device for wet cleaning and etching, characterized in that: include: Infusion pipeline, box, heating device and spray device; One end of the infusion pipeline is connected to the chemical solution supply device and the other end is connected to the box, and the chemical solution supply device delivers the chemical solution into the box through the infusion pipeline; The heating device is used to heat the chemical solution in the box; The spraying device is connected to the box and is used for spraying the heated chemical solution onto the wafer.

2. The wet cleaning and etching equipment according to claim 1, characterized in that: Also includes a monitoring device and a controller; The monitoring device is arranged in the process chamber and is used to detect the temperature of the sprayed chemical solution in real time; The controller is in control connection with the monitoring device and the heating device, and the controller is used to adjust the heating temperature of the heating device according to the temperature of the sprayed chemical solution.

3. The wet cleaning and etching equipment according to claim 2, characterized in that: The monitoring device comprises an infrared transmitter and an infrared receiver disposed in the process chamber, wherein the infrared transmitter and the infrared receiver are disposed corresponding to the spraying position of the chemical solution, and the infrared light emitted by the infrared transmitter is partially absorbed by the sprayed chemical solution and then received by the infrared receiver; The controller is also used to calculate the temperature of the sprayed chemical solution according to the absorption of the infrared light by the chemical solution.

4. The wet cleaning and etching equipment according to claim 3, characterized in that: There are a plurality of infrared transmitters which are arranged at intervals, and there are a plurality of infrared receivers which are arranged in one-to-one correspondence with the infrared transmitters.

5. The wet cleaning and etching equipment according to claim 2, characterized in that: The spray device comprises at least one spray nozzle disposed above the wafer placement position, and the spray range of the spray nozzle is adjustable; The monitoring device is also used to detect the spray concentration in real time; The controller is further configured to adjust a spray range and a spray amount of the spray nozzle according to the spray concentration.

6. The wet cleaning and etching equipment according to claim 5, characterized in that: The spray nozzles are in a plurality and arranged in an array and evenly spaced to cover the wafer placement positions.

7. The wet cleaning and etching equipment according to claim 5 or 6, characterized in that: The spray device also includes a spray seat, the top of which is provided with a liquid inlet and the bottom of which is provided with a plurality of liquid outlets at intervals, and a channel is formed between the liquid inlet and the liquid outlets; A spray type nozzle is arranged at each liquid outlet.

8. The wet cleaning and etching equipment according to any one of claims 1 to 6, characterized in that: It also includes a gas pipeline with one end connected to the gas supply device and the other end connected to the box, and the gas supply device transports inert gas into the box through the gas pipeline.

9. The wet cleaning and etching equipment according to any one of claims 1 to 6, characterized in that: The heating device may be an electric heating wire, an electric heating plate or an electric heating tube; and / or, The heating device is arranged close to the box body or is attached to the outer wall of the box body.

10. The wet cleaning and etching equipment according to any one of claims 1 to 6, characterized in that: It also includes a suck-back valve arranged on the infusion pipeline, and the suck-back valve is used to suck back the chemical solution when the spraying is stopped.

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