Epitaxial device and silicon wafer bearing structure thereof
By providing a first temperature resistant layer in the silicon wafer bearing structure of the epitaxial chamber, the problem of supporting components affecting the light propagation of the light bulb is solved, and uniform heating of the base and uniform growth of the epitaxial layer are achieved.
Patent Information
- Application Number
- CN202420433805.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-03-06
- Publication Date
- 2025-03-07
- Estimated Expiration
- 2034-03-06
AI Technical Summary
The supporting components of the epitaxial chamber will affect the light propagation of the light bulb, resulting in uneven heating of the base and affecting the uniform growth of the epitaxial layer on the silicon wafer.
A silicon wafer bearing structure is designed, including a base, a support assembly and a first temperature resistant layer. The support assembly is connected to the heating surface of the base, and the first temperature resistant layer is arranged in the area where the light on the heating surface is not affected by the support assembly to absorb the heat of the light and reduce the heating efficiency of the area.
By setting the first temperature resistance layer, uniform heating of the base is achieved, uniform temperature of the silicon wafer is ensured, and uniform growth of the epitaxial layer is ensured.
Smart Images
Figure CN222574854U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor equipment, in particular to an epitaxial device and a silicon wafer bearing structure thereof. Background Art
[0002] For the epitaxial reaction chamber, in order to complete the tasks of inserting, removing, and rotating the silicon wafer, the current mainstream epitaxial chambers all meet the corresponding functional requirements by designing a set of lifting and rotating support components under the base of the silicon wafer. The support components can drive the base to lift and rotate, and can realize the lifting and lowering of the latch on the base to cooperate with the actions of inserting and removing the silicon wafer.
[0003] However, since the base of the epitaxial chamber is heated by a light bulb, the supporting assembly is inevitably arranged on the path of light propagation of the light bulb, which will absorb and refract the light of the light bulb, affecting the heating efficiency of the bulb on the base, thereby causing uneven heating of the base, and ultimately affecting the uniformity of the epitaxial layer growth on the silicon wafer on the base. Utility Model Content
[0004] The utility model aims to provide an epitaxial device and a silicon wafer supporting structure thereof, so as to solve the problem that the supporting assembly affects the light propagation of the bulb and thus affects the heating of the base by the bulb, resulting in uneven heating of the base and ultimately affecting the uniformity of the epitaxial layer growth on the silicon wafer.
[0005] In order to solve the above technical problems, based on one aspect of the present invention, the present invention provides a silicon wafer supporting structure, which includes:
[0006] A base having a heating surface;
[0007] A support assembly, the support assembly is connected to the heating surface, the projection area of the support assembly on the heating surface along the normal of the heating surface includes a first projection and a plurality of second projections, the second projections are connected to the first projection, and the plurality of second projections are arranged circumferentially around the first projection at intervals;
[0008] A first temperature-resistant layer is provided on the heating surface between any two adjacent second projections and the first projection.
[0009] Optionally, in the radial direction of the projection area, there is a gap between the inner boundary of the first heat-resistant layer and the first projection, and the distance between the outer boundary of the first heat-resistant layer and the first projection is smaller than the distance between the outer boundary of the second projection and the first projection.
[0010] Optionally, the first heat-resistant layer is arc-shaped, and the distance from the inner boundary of the first heat-resistant layer to the center of the first projection is greater than or equal to 30 mm and less than or equal to 40 mm; the distance from the outer boundary of the first heat-resistant layer to the center of the first projection is greater than 145 mm and less than 155 mm.
[0011] Optionally, the thickness of the first temperature-resistant layer is greater than or equal to 45 um and less than or equal to 55 um.
[0012] Optionally, the silicon wafer supporting structure further includes a second heat-resistant layer, the second heat-resistant layer uniformly covers the heated surface, and the first heat-resistant layer is coated and formed on the second heat-resistant layer.
[0013] Optionally, the first temperature-resistant layer and the second temperature-resistant layer both include silicon carbide layers.
[0014] Optionally, a plurality of the second projections are evenly spaced circumferentially around the first projection.
[0015] Optionally, the supporting assembly includes a driving shaft and a plurality of connecting brackets connected to the driving shaft, the connecting brackets are connected to the base, the projection of the driving shaft along the normal to the heating surface onto the heating surface is a first projection, and the projection of the connecting brackets along the normal to the heating surface onto the heating surface is a second projection.
[0016] Optionally, the base has a socket, the socket is recessed and formed on the heating surface, and the connecting bracket is plug-connected to the socket.
[0017] Based on another aspect of the utility model, the utility model further provides an epitaxial device, which includes the silicon wafer supporting structure as described above and a light irradiation heating unit, wherein the light irradiation heating unit emits a light beam to the heated surface.
[0018] Optionally, the light heating unit emits a light beam toward the heating surface along a normal direction of the heating surface.
[0019] To sum up, in the epitaxial device and silicon wafer supporting structure thereof provided by the utility model, the silicon wafer supporting structure includes a base, a supporting assembly and a first heat-resistant layer, the base has a heating surface; the supporting assembly is connected to the heating surface, and the projection area of the supporting assembly on the heating surface along the normal of the heating surface includes a first projection and multiple second projections, the second projections are connected to the first projection, and the multiple second projections are arranged circumferentially around the first projection; the first heat-resistant layer is arranged on the heating surface between any two adjacent second projections and the first projection. In this way, for the area where the second projection and the first projection affect the propagation of light due to the support component, that is, the area on the heated surface where the light cannot be directly irradiated for heating, resulting in reduced heating efficiency of the base and uneven heating of the base, the utility model arranges a first heat-resistant layer on the heated surface between any two adjacent second projections and the first projection, that is, the first heat-resistant layer is arranged in the area on the heated surface where the light is not affected by the support component, and the heating efficiency of the area can be reduced by absorbing the heat of the light by the first heat-resistant layer, so that the overall heating effect of the heated surface is balanced, ensuring that the base is heated evenly so that the temperature of the silicon wafer fixed on the base is uniform during the process and the grown epitaxial layer is uniform. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Those skilled in the art should understand that the drawings provided are for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.
[0021] Figure 1 is a schematic diagram of an epitaxial device according to an embodiment of the utility model;
[0022] Figure 2 It is a schematic diagram of the projection of the support assembly of one embodiment of the utility model on the heating surface of the base;
[0023] Figure 3 It is a schematic diagram of a socket on a base of an embodiment of the utility model;
[0024] Figure 4 It is a schematic diagram of the first temperature-resistant layer on the heating surface of an embodiment of the utility model.
[0025] In the attached figure:
[0026] 10-base; 101-heating surface; 102-socket; 20-support assembly; 21-driving shaft; 210-first projection; 22-connecting bracket; 220-second projection; 30-light heating unit; 40-first temperature-resistant layer. DETAILED DESCRIPTION
[0027] In order to make the purpose, advantages and features of the utility model clearer, the utility model is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the utility model. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different scales are used.
[0028] As used in the present invention, the singular forms "one", "an" and "the" include plural objects, the term "or" is usually used to include the meaning of "and / or", the term "several" is usually used to include the meaning of "at least one", and the term "at least two" is usually used to include the meaning of "two or more". In addition, the terms "first", "second" and "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second" and "third" may explicitly or implicitly include one or at least two of the features, "one end" and "the other end" and "the proximal end" and "the distal end" generally refer to two corresponding parts, which not only include the endpoints, and the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. In addition, as used in the present invention, an element disposed on another element generally only indicates that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the connection, coupling, cooperation or transmission between the two elements may be direct or indirect through an intermediate element, and cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, an element may be in any orientation such as inside, outside, above, below or on one side of another element, unless otherwise clearly indicated in the content. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0029] Figure 1 is a schematic diagram of an epitaxial device according to an embodiment of the utility model, Figure 2 Schematic diagram of the projection of the support assembly of one embodiment of the utility model on the heating surface of the base. Figure 1The epitaxial device includes a silicon wafer bearing structure and a light heating unit 30. The silicon wafer bearing structure includes a base 10 and a support assembly 20. The base 10 is made of quartz and can be in a plate shape. The two opposite sides of the base 10 are a silicon wafer fixing surface and a heating surface 101. The silicon wafer fixing surface is used to carry and fix the silicon wafer, and the heating surface 101 is used to heat the base 10 after being heated. Figure 1 and Figure 2 The support assembly 20 is connected to the heated surface 101. The projection area of the support assembly 20 on the heated surface 101 along the normal direction of the heated surface 101 includes a first projection 210 and a plurality of second projections 220. The second projections 220 are connected to the first projection 210, and the plurality of second projections 220 are arranged at intervals around the first projection 210. Further, the plurality of second projections 220 are evenly arranged at intervals around the first projection 210. The support assembly 20 can drive the base 10 to perform lifting and lowering motion along the normal direction of the heated surface 101, and drive the base 10 to perform rotational motion around the center line of the heated surface 101. In actual scenarios, the normal direction of the heated surface 101 is parallel to the direction of gravity. The light irradiation and heating unit 30 emits a light beam to the heating surface 101. In one embodiment, the light irradiation and heating unit may emit a light beam to the heating surface 101 along the normal direction of the heating surface 101. The light beam is irradiated on the heating surface 101 to heat the base 10 and form a uniform temperature field, thereby achieving uniform heating of the wafer on the base 10 to generate an epitaxial layer with uniform resistivity. The light irradiation and heating unit 30 may be, for example, a heating lamp group.
[0030] In one embodiment, see Figure 1 The support assembly 20 includes a motor (not shown), a drive shaft 21, and a plurality of connection brackets 22 connected to the drive shaft 21. The connection bracket 22 is disposed at one end of the drive shaft 21, and the plurality of connection brackets 22 are arranged circumferentially around the drive shaft 21 at intervals. The connection bracket 22 is arranged at an angle to the drive shaft 21. The connection bracket 22 is connected to the base 10, and the motor is connected to the other end of the drive shaft 21. The motor is used to drive the drive shaft 21 to rotate, and can also be used to drive the drive shaft 21 to move along its own axial direction. Figure 2 The axial direction of the driving shaft 21 is perpendicular to the heating surface 101 , the projection of the driving shaft 21 along the normal to the heating surface 101 on the heating surface 101 is a first projection 210 , and the projection of the connecting bracket 22 along the normal to the heating surface 101 on the heating surface 101 is a second projection 220 .
[0031] Figure 3 2 is a schematic diagram of a socket on a base of an embodiment of the present utility model. Figure 3The base 10 has a socket 102 which can be a socket 102 formed in a recess on the heating surface 101 . The connecting bracket 22 is plugged into the socket 102 , thereby achieving connection between the supporting assembly 20 and the base 10 .
[0032] Therefore, the support component 20 is inevitably arranged on the path of light propagation of the bulb, which will absorb, refract, etc. the light of the bulb, and the support component 20 has a first projection 210 and a second projection 220 on the heated surface 101, resulting in the light of the light heating component being unable to irradiate the projection area, affecting the heating efficiency of the light heating component on the base 10, and further causing uneven heating of the base 10, ultimately affecting the uniformity of the epitaxial layer growth on the silicon wafer on the base 10.
[0033] Figure 4 This is a schematic diagram of the first temperature-resistant layer on the heating surface of an embodiment of the utility model. Figure 4 The silicon wafer bearing structure of this embodiment further includes a first heat-resistant layer 40, and the first heat-resistant layer 40 is disposed on the heating surface 101 between any two adjacent second projections 220 and the first projection 210. The first heat-resistant layer 40 can absorb heat and slow down the heating of the base 10, and the first heat-resistant layer 40 is, for example, a silicon carbide layer. In this way, in order to solve the problem that the second projection 220 and the first projection 210 are areas where the support component 20 affects the propagation of light, that is, the area on the heated surface 101 where the light cannot be directly irradiated for heating, resulting in reduced heating efficiency of the base 10 and uneven heating of the base 10, the utility model sets a first heat-resistant layer 40 on the heated surface 101 between any two adjacent second projections 220 and the first projection 210, that is, the first heat-resistant layer 40 is set in the area on the heated surface 101 where the light is not affected by the support component 20, and the first heat-resistant layer 40 can absorb the heat of the light to reduce the heating efficiency of the area, so that the overall heating effect of the heated surface 101 is balanced, ensuring that the base 10 is heated evenly, so that the silicon wafer fixed on the base 10 has a uniform temperature in the chip during the process, and the grown epitaxial layer is uniform, thereby improving the on-chip performance of the turn-on current of the formed device.
[0034] Furthermore, in actual scenarios, the area on the base 10 for heating the silicon wafer does not exceed the circular area defined by the multiple sockets 102, and is generally within the circular area defined by the multiple sockets 102, and the area on the heating surface 101 that is a certain distance away from the first projection 210 is heated more slowly, and this part of the area may not be provided with the first heat-resistant layer 40. Therefore, considering the actual heating scenario, in the radial direction of the above-mentioned projection area, the setting conditions of the first heat-resistant layer 40 meet: there is a gap between the inner boundary of the first heat-resistant layer 40 and the first projection 210, and the distance between the outer boundary of the first heat-resistant layer 40 and the outer peripheral boundary of the first projection 210 is less than the distance between the outer boundary of the second projection 220 and the outer peripheral boundary of the first projection 210. In this way, the gap between the inner boundary of the first heat-resistant layer 40 and the outer boundary of the first projection 210 is the area close to the center of the base 10 and which heats more slowly. The distance between the outer boundary of the first heat-resistant layer 40 and the outer boundary of the first projection 210 is smaller than the distance between the outer boundary of the second projection 220 and the outer boundary of the first projection 210. This setting condition ensures that the first heat-resistant layer 40 will not exceed the circular area defined by the multiple sockets 102.
[0035] In one embodiment, the first heat-resistant layer 40 is in an arc shape, and the distance from the inner edge of the first heat-resistant layer 40 to the center of the first projection 210 (ie Figure 4 R1 in the figure is greater than or equal to 30 mm and less than or equal to 40 mm, for example, 35 mm; the distance from the outer boundary of the first temperature-resistant layer 40 to the center of the first projection 210 (ie Figure 4 R2 in the figure is greater than 145 mm and less than 155 mm, such as 150 mm. The thickness of the first heat-resistant layer 40 (that is, the normal dimension of the first heat-resistant layer 40 along the heated surface 101) is greater than or equal to 45 um and less than or equal to 55 um, such as 50 um. It is understandable that for the manner in which the second projections 220 are uniformly arranged around the first projection 210, then a plurality of first heat-resistant layers 40 will be uniformly arranged around the first projection 210. Of course, the first heat-resistant layer 40 may also be trapezoidal, with the two waists of the trapezoid located on the sides of the second projections 220 on both sides, and the two bottoms of the trapezoid being the outer boundary and the inner boundary of the first heat-resistant layer 40, respectively. In some other embodiments, the first heat-resistant layer 40 may also be in a regular shape, such as a rectangle, an ellipse, a circle, etc., and the area located between two adjacent second projections 220 on the heated surface may be connected to the sides of the second projections 220, or may have a gap. The first temperature-resistant layer 40 may also be in an irregular shape, such as a shape consisting of a curve, a straight line, and a wavy line.
[0036] It should be noted that this embodiment does not limit the number of first heat-resistant layers 40 in the area between two adjacent second projections 220 of the heated surface 101. For example, the number can be one or at least two. When the number is more than one, there can be gaps between the first heat-resistant layers, or they can be connected. The shapes of the first heat-resistant layers 40 can be the same or different, and can be regular or irregular.
[0037] In practice, the heating surface 101 of the base 10 will be uniformly covered with a second temperature-resistant layer, and the first temperature-resistant layer 40 of this embodiment is coated and formed on the second temperature-resistant layer. The second temperature-resistant layer can be a silicon carbide layer.
[0038] Although the utility model is disclosed as above with preferred embodiments, the above embodiments are not intended to limit the utility model. For any technician familiar with the art, without departing from the scope of the technical solution of the utility model, the above disclosed technical content can be used to make many possible changes and modifications to the technical solution of the utility model, or modified into equivalent embodiments with equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the utility model without departing from the content of the technical solution of the utility model still falls within the scope of protection of the technical solution of the utility model.
Claims
1. A silicon wafer supporting structure, characterized in that: include: A base having a heating surface; A support assembly, the support assembly is connected to the heating surface, the projection area of the support assembly on the heating surface along the normal of the heating surface includes a first projection and a plurality of second projections, the second projections are connected to the first projection, and the plurality of second projections are arranged circumferentially around the first projection at intervals; A first temperature-resistant layer is provided on the heating surface between any two adjacent second projections and the first projection.
2. The silicon wafer supporting structure according to claim 1, characterized in that: In the radial direction of the projection area, there is a gap between the inner boundary of the first heat-resistant layer and the first projection, and the distance between the outer boundary of the first heat-resistant layer and the first projection is smaller than the distance between the outer boundary of the second projection and the first projection.
3. The silicon wafer supporting structure according to claim 2, characterized in that: The first heat-resistant layer is arc-shaped, and the distance from the inner boundary of the first heat-resistant layer to the center of the first projection is greater than or equal to 30 mm and less than or equal to 40 mm; the distance from the outer boundary of the first heat-resistant layer to the center of the first projection is greater than 145 mm and less than 155 mm.
4. The silicon wafer supporting structure according to claim 1, characterized in that: The thickness of the first temperature-resistant layer is greater than or equal to 45 um and less than or equal to 55 um.
5. The silicon wafer supporting structure according to claim 1, characterized in that: The silicon wafer bearing structure further includes a second heat-resistant layer, the second heat-resistant layer uniformly covers the heated surface, and the first heat-resistant layer is coated and formed on the second heat-resistant layer.
6. The silicon wafer supporting structure according to claim 5, characterized in that: The first temperature-resistant layer and the second temperature-resistant layer both include silicon carbide layers.
7. The silicon wafer supporting structure according to claim 1, characterized in that: A plurality of the second projections are evenly spaced around the first projection in the circumferential direction.
8. The silicon wafer supporting structure according to claim 1, characterized in that: The support assembly includes a driving shaft and a plurality of connecting brackets connected to the driving shaft, the connecting brackets are connected to the base, the projection of the driving shaft along the normal to the heating surface onto the heating surface is a first projection, and the projection of the connecting brackets along the normal to the heating surface onto the heating surface is a second projection.
9. The silicon wafer supporting structure according to claim 8, characterized in that: The base has a socket, the socket is recessed and formed on the heating surface, and the connecting bracket is plug-connected with the socket.
10. An epitaxial device, characterized in that: include: The silicon wafer supporting structure according to any one of claims 1 to 9; A light irradiation heating unit emits a light beam toward the heating surface.