Device for solving problem of tungsten film growth on back surface and lower part of tungsten heating device

Abstract

The utility model provides a device for solving the problem of tungsten film growth on the back and the lower part of a tungsten heating device. And the working cavity is formed in the working box. The utility model provides a device for growing a tungsten film on the back and the lower part of a tungsten heating device, reaction gas is introduced through a gas pipeline and sprayed on the surface of a wafer through a spray head, the wafer is subjected to heat transfer by the heating device, a chemical reaction is carried out on the surface to generate the tungsten film, and a group of one-to-two purified gas pipelines for introducing argon are designed at the bottom of a working box. The heating device is used for upwards blowing reaction gas and gas left through flow balance, and the reaction gas and purging gas are pumped away through the purification pipeline vacuumizing pipe, so that the problem that a large number of tungsten films are generated on the back face and the bottom of the heating device is solved, the device is simple in structure and high in practicability, the tungsten film cleaning effect is improved, and the service life is prolonged. The heating effect of the heating device is prevented from being reduced, and the situation that wafers are poor in machining or break down is reduced.

Description

Technical Field

[0001] The utility model relates to the field of automatic temperature control, in particular to a device for growing tungsten film on the back and lower part of a tungsten heating device. Background Art

[0002] In the field of power devices, W (tungsten) is usually used for conductivity. In the process, it is mainly used in the upward connection design of finer holes in the process. The method for preparing tungsten film usually uses a chemical vapor deposition process, which will cause a large amount of tungsten film to grow inside the cavity, which needs to be cleaned regularly.

[0003] During the tungsten growth process on the wafer, tungsten will be sputtered to various protective devices in the cavity to varying degrees. Clean gas is introduced regularly to purge and clean the tungsten film, and the cavity is opened to disassemble parts that need to be replaced and then cleaned and reused repeatedly. However, a certain amount of tungsten film is usually accumulated on the lower part of the heating device, but the introduced clean gas cannot completely clean the tungsten film, and the heating device is not a disassembled and cleaned part. After a long period of accumulation, the stress of the tungsten film will cause the level of the heating device to be affected, which in turn leads to poor processing or failure of the produced wafers.

[0004] Therefore, it is necessary to provide a device for growing tungsten film on the back and bottom of a tungsten heating device to solve the above technical problems. Utility Model Content

[0005] The utility model provides a device for solving the problem of growing tungsten film on the back and lower part of a tungsten heating device, solving the problem that the cleaning gas introduced into the heating device cannot completely clean the tungsten film, and that the heating device is not a disassembled cleaning component. After a long period of accumulation, the stress of the tungsten film will cause the level of the heating device to be affected, thereby causing poor processing or failure of the produced wafers.

[0006] In order to solve the above technical problems, the utility model provides a device for growing a tungsten film on the back and lower part of a tungsten heating device, comprising: a working box;

[0007] A working chamber, the working chamber is opened inside the working box, and a heating device is fixedly installed on the bottom of the working chamber;

[0008] A purification gas pipeline is arranged at the bottom of the working box, a gas pipeline is arranged at the top of the working box, a nozzle is arranged at the bottom of the gas pipeline, and a purification pipeline vacuum tube is fixedly installed on one side of the outer surface of the working box.

[0009] Preferably, a wafer is arranged on the top of the heating device.

[0010] Preferably, a wafer transfer valve is provided on the other side of the outer surface of the working box.

[0011] Preferably, a connecting hole is provided on one side of the outer surface of the purified gas pipeline.

[0012] Compared with the related art, the device provided by the utility model for solving the problem of growing tungsten film on the back and lower part of the tungsten heating device has the following beneficial effects:

[0013] The utility model provides a device for solving the problem of tungsten film growing on the back and lower part of a tungsten heating device. Reaction gas is connected through a gas pipeline and sprayed on the surface of a wafer through a nozzle. The wafer is subjected to heat transfer by the heating device, and a chemical reaction occurs on the surface to generate a tungsten film. A group of 1:2 purification gas pipelines connected to argon gas are designed at the bottom of a working box to blow the inflowing reaction gas upwards, and the remaining gas is balanced by flow rate. The reaction gas and the purge gas are extracted through a vacuum tube of the purification pipeline, thereby solving the problem of a large amount of tungsten film being generated on the back and bottom of the heating device. The device has a simple structure and strong practicality, improves the cleaning effect of the tungsten film, avoids reducing the heating effect of the heating device, and reduces the possibility of poor processing or malfunction of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A schematic structural diagram of a first embodiment of a device for growing a tungsten film on the back and bottom of a tungsten heating device provided by the utility model;

[0015] Figure 2 for Figure 1 An enlarged schematic diagram of point A is shown.

[0016] Numbers in the figure: 1. working box, 2. working chamber, 3. heating device, 4. gas pipeline, 5. nozzle, 6. wafer, 7. tungsten film, 8. purification gas pipeline, 9. purification pipeline vacuum tube, 10. wafer transfer valve, 11. connecting hole. DETAILED DESCRIPTION

[0017] The utility model is further described below in conjunction with the accompanying drawings and implementation modes.

[0018] First embodiment

[0019] Please refer to Figure 1 and Figure 2 ,in, Figure 1 A schematic structural diagram of a first embodiment of a device for growing a tungsten film on the back and bottom of a tungsten heating device provided by the utility model; Figure 2 for Figure 1 The enlarged schematic diagram of point A is shown. A device for solving the problem of growing a tungsten film on the back and lower part of a tungsten heating device comprises: a working box 1;

[0020] A working chamber 2, the working chamber 2 is opened inside the working box 1, and a heating device 3 is fixedly installed at the bottom of the working chamber 2;

[0021] A purification gas pipeline 8 is provided at the bottom of the working box 1, a gas pipeline 4 is provided at the top of the working box 1, a nozzle 5 is provided at the bottom of the gas pipeline 4, and a purification pipeline vacuum pipe 9 is fixedly installed on one side of the outer surface of the working box 1.

[0022] A wafer 6 is arranged on the top of the heating device 3 .

[0023] A wafer transfer valve 10 is disposed on the other side of the outer surface of the working box 1 .

[0024] A communication hole 11 is formed on one side of the outer surface of the purified gas pipeline 8 .

[0025] The purification gas pipeline 8 is divided into 1 2 or 3 pipes at the bottom of the working box 1 and enters the working chamber 2, protruding 2-3 cm from the cavity. A hole is opened on the side of each branch pipe extending into the working chamber 2. The side openings of 2 or 3 branch pipes are arranged in a clockwise or counterclockwise direction to ensure that the purge gas can not only go straight up, but also have a spiral upward trend to offset the inflowing reaction gas, and all of them are sucked away by the purification pipeline vacuum tube 9.

[0026] The flow rate of the argon purge gas and the reaction gas around the heating device 3 needs to be adjusted to match the inflow flow rate and cannot be greater than the outflowing reaction gas flow rate. Each tube of the purified gas pipeline 8 is located in the middle section of the pipeline outside the cavity. A set of flow-adjustable MFC or regulating valve is provided.

[0027] The working box 1 is divided into two parts, the upper part and the lower part. When the equipment cavity parts are maintained, the upper cavity is opened to disassemble and replace the parts that need to be cleaned.

[0028] The working principle of a device for growing tungsten film on the back and bottom of a tungsten heating device provided by the utility model is as follows:

[0029] During operation, first, a purification gas pipeline 8 of argon is connected from the bottom of the cavity. In the process, it is used to purge the reaction gas flowing out from the upper nozzle 5 and sprayed onto the surface of the wafer 6. The wafer 6 is subjected to heat transfer from the heating device 3, and a chemical reaction occurs on the surface to generate a tungsten film 7. The tungsten film 7 also reaches the bottom of the heating device 3 and accumulates on the back and lower part of the heating device 3. A group of 1-to-2 purification gas pipelines 8 connected to argon are designed at the bottom of the work box 1 to blow the inflowing reaction gas upwards, balance the remaining gas by flow, and extract the reaction gas and the purge gas through the purification pipeline vacuum tube 9, thereby solving the problem of the large amount of tungsten film generated on the back and bottom of the heating device 3.

[0030] Compared with the related art, the device provided by the utility model for solving the problem of growing tungsten film on the back and lower part of the tungsten heating device has the following beneficial effects:

[0031] The utility model provides a device for solving the problem of tungsten film growing on the back and lower part of a tungsten heating device. Reaction gas is connected through a gas pipeline 4 and sprayed on the surface of a wafer 6 through a nozzle 5. The wafer 6 is subjected to heat transfer from the heating device 3, and a chemical reaction occurs on the surface to generate a tungsten film 7. A group of 1-to-2 purification gas pipelines 8 connected to argon gas are designed at the bottom of a working box 1 to blow the inflowing reaction gas upwards, balance the remaining gas through the flow rate, and extract the reaction gas and the purge gas through a vacuum tube 9 of the purification pipeline, thereby solving the problem of a large amount of tungsten film being generated on the back and bottom of the heating device 3. The device has a simple structure and strong practicality, improves the cleaning effect of the tungsten film, avoids reducing the heating effect of the heating device 3, and reduces the possibility of poor processing or malfunction of the wafer.

[0032] The above description is only an embodiment of the present invention, and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A device for solving the problem of growing tungsten film on the back and bottom of a tungsten heating device, characterized in that: include: Work Box; A working chamber, the working chamber is opened inside the working box, and a heating device is fixedly installed on the bottom of the working chamber; A purification gas pipeline is arranged at the bottom of the working box, a gas pipeline is arranged at the top of the working box, a nozzle is arranged at the bottom of the gas pipeline, and a purification pipeline vacuum tube is fixedly installed on one side of the outer surface of the working box.

2. A device for solving the problem of growing tungsten film on the back and bottom of a tungsten heating device according to claim 1, characterized in that: A wafer is arranged on the top of the heating device.

3. The device for solving the problem of growing tungsten film on the back and bottom of a tungsten heating device according to claim 1, characterized in that: A wafer transfer valve is arranged on the other side of the outer surface of the working box.

4. The device for solving the problem of growing tungsten film on the back and bottom of a tungsten heating device according to claim 1, characterized in that: A communication hole is provided on one side of the outer surface of the purified gas pipeline.

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