Flow guide device applied to MOCVD (Metal Organic Chemical Vapor Deposition) reaction cavity

Abstract

The utility model discloses a flow guide device applied to an MOCVD (Metal Organic Chemical Vapor Deposition) reaction cavity. The flow guide device comprises a flow guide ring, wherein the size of an outer ring is matched with that of the reaction cavity; a plurality of flow guide holes are evenly distributed in the flow guide ring in the circumferential direction. And two screw rod through holes are also distributed in the flow guide ring in a central symmetry manner. According to the utility model, the flow guide ring of which the outer ring diameter is matched with that of the reaction cavity is arranged, and the flow guide holes are uniformly distributed on the flow guide ring along the circumferential direction, so that gas flowing into the bottom of the reaction cavity is uniformly diffused to the bottom of the reaction cavity after being guided by the flow guide ring, and the uniformity of final substrate coating is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a flow guiding device applied to an MOCVD reaction chamber. Background Art

[0002] OCVD, or Metal Organic Chemical Vapor Deposition, is a method that uses metal organic compounds as raw materials and brings them into the reaction chamber through carrier gas. Under high temperature conditions, the organic metal compounds are decomposed into atoms and react with the substrate surface to form a thin film material. The core is the design of the flow field and temperature field of the reaction chamber. Only by designing a reasonable reaction chamber can the flow field be evenly distributed and the chemical reaction proceed smoothly, which can further improve the utilization rate of the reaction source and the quality of the film.

[0003] At present, in the existing reaction chamber, due to uneven gas diffusion during the reaction process, the final substrate coating uniformity is poor.

[0004] Therefore, it is necessary to design a flow guide device for use in an MOCVD reaction chamber to solve the above problems. Utility Model Content

[0005] The utility model aims to solve the problem in the prior art that uneven gas diffusion in a reaction chamber leads to poor uniformity of final substrate coating, and proposes a flow guide device applied to an MOCVD reaction chamber.

[0006] The technical scheme of the utility model is: a flow guide device applied to an MOCVD reaction chamber, comprising a flow guide ring whose outer ring size matches the reaction chamber; the flow guide ring is provided with a plurality of flow guide holes evenly distributed along the circumference; and the flow guide ring is also provided with two screw through holes distributed in a centrally symmetrical manner.

[0007] The guide hole is a tapered hole that is larger at the top and smaller at the bottom, and the large end and the small end of the guide hole are coaxially arranged.

[0008] The number of the guide holes is 5-15.

[0009] The bottom surface of the guide ring is located on one side of the two screw through holes and is provided with positioning protrusions, and the two positioning protrusions are arranged in a centrally symmetrical manner.

[0010] The positioning protrusion is hemispherical.

[0011] The large end diameter of the guide hole is 28-32 mm, and the small end diameter is 23-27 mm.

[0012] The width of the guide ring is 33-35 mm.

[0013] By adopting the above technical scheme, the utility model has the following beneficial effects: (1) The utility model provides a guide ring whose outer diameter matches the reaction chamber, and a plurality of guide holes are evenly distributed along the circumference on the guide ring, so that the gas flowing into the bottom of the reaction chamber is guided by the guide ring and diffused evenly to the bottom of the reaction chamber, thereby improving the uniformity of the final substrate coating.

[0014] (2) The guide hole of the utility model adopts a tapered hole that is larger at the top and smaller at the bottom, which avoids dead corners as much as possible, helps reduce the accumulation of particles and prevents the occurrence of blockage.

[0015] (3) The number of the diversion holes of the utility model is 5-15, and the diversion effect is better.

[0016] (4) The utility model provides two centrally symmetrical positioning protrusions at the bottom of the guide ring to facilitate positioning during processing of the guide hole.

[0017] (5) The positioning protrusion of the utility model is hemispherical, which makes positioning more convenient and accurate. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to make the content of the utility model more clearly understood, the utility model is further described in detail below based on specific embodiments and in conjunction with the accompanying drawings.

[0019] Figure 1 It is a structural schematic diagram of the utility model.

[0020] Figure 2 It is a schematic diagram of the back structure of the utility model.

[0021] The reference numerals in the accompanying drawings are:

[0022] Guide ring 1, guide hole 2, screw through hole 3, positioning protrusion 4. DETAILED DESCRIPTION

[0023] (Example 1)

[0024] See Figure 1 and Figure 2 A flow guide device applied to a MOCVD reaction chamber in this embodiment includes a flow guide ring 1 whose outer ring size matches the reaction chamber; a plurality of flow guide holes 2 are evenly distributed along the circumference of the flow guide ring 1; and two screw through holes 3 are also centrally symmetrically distributed on the flow guide ring 1.

[0025] Furthermore, in order to avoid the accumulation of particulate matter, the guide hole is a tapered hole that is larger at the top and smaller at the bottom, and the large end and the small end of the guide hole are coaxially arranged.

[0026] Furthermore, in order to ensure the flow guiding effect of the flow guiding ring 1, the number of the flow guiding holes is 5-15, preferably 10.

[0027] Furthermore, in order to facilitate the positioning of the guide holes during processing, the bottom surface of the guide ring 1 is provided with positioning protrusions 4 on one side of the two screw through holes 3, and the two positioning protrusions 4 are arranged symmetrically with respect to the center.

[0028] Furthermore, the positioning protrusion 4 is hemispherical, which makes positioning more convenient and accurate.

[0029] Furthermore, the diameter of the large end of the guide hole is 28-32 mm, preferably 30 mm, and the diameter of the small end is 23-27 mm, preferably 25 mm.

[0030] Furthermore, the width of the guide ring 1 is 33-37 mm, preferably 35 mm, and the guide hole wall has sufficient strength while ensuring that the guide hole is large enough.

[0031] The flow guide device applied to the MOCVD reaction chamber of this embodiment is provided with a flow guide ring 1 whose outer diameter matches the reaction chamber, and a plurality of flow guide holes 2 are evenly distributed along the circumference on the flow guide ring 1, so that the gas flowing into the bottom of the reaction chamber is evenly diffused to the bottom of the reaction chamber after being guided by the flow guide ring 1, thereby improving the uniformity of the final substrate coating.

[0032] The specific embodiments described above further illustrate the purpose, technical solutions and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A flow guide device applied to a MOCVD reaction chamber, characterized in that: The invention comprises a flow guide ring (1) whose outer ring size matches the reaction chamber; the flow guide ring (1) is provided with a plurality of flow guide holes (2) evenly distributed along the circumference; and the flow guide ring (1) is also provided with two screw through holes (3) distributed in a centrally symmetrical manner.

2. The flow guide device for use in a MOCVD reaction chamber according to claim 1, characterized in that: The guide hole is a tapered hole that is larger at the top and smaller at the bottom, and the large end and the small end of the guide hole are coaxially arranged.

3. The flow guide device for use in a MOCVD reaction chamber according to claim 1, characterized in that: The number of the guide holes is 5-15.

4. The flow guide device for use in a MOCVD reaction chamber according to claim 1, characterized in that: The bottom surface of the guide ring (1) is located on one side of the two screw through holes (3) and is provided with positioning protrusions (4), and the two positioning protrusions (4) are arranged in a centrally symmetrical manner.

5. The flow guide device for use in a MOCVD reaction chamber according to claim 4, characterized in that: The positioning protrusion (4) is hemispherical.

6. The flow guide device for use in a MOCVD reaction chamber according to claim 2, characterized in that: The large end diameter of the guide hole is 28-32 mm, and the small end diameter is 23-27 mm.

7. The flow guide device for use in a MOCVD reaction chamber according to claim 1, characterized in that: The width of the guide ring (1) is 33-35 mm.

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