Semiconductor process equipment
By designing the matrix and heating components of an annular structure in semiconductor process equipment, the problems of low heating efficiency and poor temperature uniformity of the base are solved, and more efficient heating and more uniform temperature distribution are achieved, which improves process efficiency and semiconductor processing quality.
Patent Information
- Application Number
- CN202420335183.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-22
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2034-02-22
AI Technical Summary
In semiconductor process equipment, the heating efficiency of the base is low, and the temperature uniformity of the bottom and upper part of the base is poor, which affects the normal processing of the semiconductor.
A semiconductor process equipment is designed, which includes a substrate with an annular structure and a heating assembly. The inner and outer surfaces of the substrate are sandwiched with an annular structure, allowing the heating assembly to be installed inside from the port of the storage groove, and the annular heating assembly is used to provide heating for the substrate to improve heating efficiency and temperature uniformity.
The heating efficiency and temperature uniformity of the substrate are improved, so that the heating temperatures at different locations on the substrate can meet the needs, and the process efficiency and the quality of semiconductor processing are improved.
Smart Images
Figure CN222619693U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductor processing technology, and specifically relates to a semiconductor process equipment. Background Art
[0002] During the processing of semiconductors, it is usually necessary to control the temperature in the chamber. However, since the base at the bottom of the chamber usually needs to be connected to an external device, the heat exchange amount at the base is relatively large, which easily causes the temperature at the base to be relatively low, and then it is necessary to ensure that the base still has a temperature that meets the requirements through additional heating. At present, a heating element is usually set at the bottom of the base, and the heat is transferred from the bottom to the upper part of the base by the heat conduction of the base itself, so that the temperature of the entire base meets the requirements. However, the heating efficiency of this heating method is usually low, resulting in a correspondingly low process efficiency, and due to the influence of this method of heat conduction, it is easy to cause the temperature of the upper part of the base to be lower than the temperature of the lower part of the base, which will have a greater adverse effect on the normal processing of semiconductors. Utility Model Content
[0003] The purpose of the embodiments of the present application is to provide a semiconductor process equipment to solve the problem that the heating efficiency of the base in the current semiconductor process equipment is low and the temperature uniformity of the bottom and top of the base is poor, which has a significant adverse effect on the normal processing of the semiconductor.
[0004] The present application embodiment discloses a semiconductor process equipment, which includes a substrate, a base, a heating component and a temperature measuring component, wherein the substrate and the heating component are both annular structural components, the base is connected to one end of the substrate, an annular accommodating groove is sandwiched between the inner surface and the outer surface of the substrate, and the accommodating groove is provided with a port located at one end of the substrate facing the base, and the heating component can be installed in the accommodating groove from the port;
[0005] The side wall of the substrate is provided with a first through hole and a second through hole, and the heating component is provided with a third through hole. One end of the power cable of the heating component passes through the first through hole and extends out of the substrate, and the temperature measuring component passes through the second through hole and extends into the third through hole to measure the temperature of the substrate.
[0006] An embodiment of the present application discloses a semiconductor process equipment, wherein a base is connected to one end of a substrate, and an annular receiving groove is sandwiched between the inner and outer surfaces of the annular substrate, the receiving groove being used to provide a receiving space for a heating component, so that the heating component can be installed into the receiving groove from a port of the receiving groove located at one end of the substrate facing the base, so that the annular heating component can be used to provide heating for the substrate, making the heating efficiency of the substrate relatively high, and this can also improve the heating effect at different positions of the substrate along its own axis, so that the heating temperature at different positions on the substrate can meet the requirements.
[0007] At the same time, a first through hole is provided on the side wall of the substrate, and the first through hole can be used to extend the power cable of the heating component out of the substrate to connect to the power supply, thereby ensuring that the heating component can work normally. At the same time, a second through hole is also provided on the side wall of the substrate, and a third through hole is provided on the heating component. By arranging the second through hole and the third through hole opposite to each other, the temperature measuring component of the semiconductor process equipment can pass through the second through hole and extend into the third through hole, thereby ensuring that the temperature measuring component can measure the temperature of the substrate, and is used to feedback and control the working condition of the heating component, thereby improving the heating accuracy of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0008] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0009] Figure 1 A schematic diagram of a partial structure including a substrate in a semiconductor process device disclosed in an embodiment of the present application;
[0010] Figure 2 A schematic diagram of a partial structure including a heater in a semiconductor process equipment disclosed in an embodiment of the present application;
[0011] Figure 3 A schematic diagram of the structure of a semiconductor process equipment disclosed in an embodiment of the present application;
[0012] Figure 4 for Figure 3 A magnified schematic diagram of the middle part of the structure.
[0013] Reference numerals:
[0014] 110-base, 111-accommodating groove, 112-port, 113-first through hole, 114-second through hole, 115-limiting groove, 116-cooling groove, 116a-first groove body, 116b-second groove body, 117-installation groove, 120-base, 130-process outer tube, 140-installation tube,
[0015] 200-heating assembly, 210-heater, 210a-first ring segment, 210b-second ring segment, 211-heating part, 211a-third through hole, 211b-avoidance gap, 220-electrical cable,
[0016] 310-temperature measuring element, 320-in-cavity temperature detection element,
[0017] 400-seal ring,
[0018] 500-Package,
[0019] 600-External heating element,
[0020] 700-Bearing member. DETAILED DESCRIPTION
[0021] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0022] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.
[0023] like Figure 1-Figure 4 As shown, the embodiment of the present application discloses a semiconductor process equipment, which can be used to process semiconductor workpieces. The semiconductor process equipment includes a substrate 110, a base 120, a heating component 200 and a temperature measuring component 310. Of course, the semiconductor process equipment can also include structures such as an external heating component 600 and a process outer tube 130, which will not be described in detail here.
[0024] Among them, the substrate 110 and the base 120 are structures used to form a process chamber in semiconductor process equipment. Of course, in semiconductor process equipment, the structure used to form a process chamber also includes the above-mentioned process outer tube 130, etc., which can carry the carrier 700 of the workpiece to be processed and install it in the process chamber. Specifically, the substrate 110 is an annular structure, and the base 120 is connected to one end of the substrate 110, so that one end of the substrate 110 of the annular structure can be blocked by the base 120, and for the end of the substrate 110 away from the base 120, the above-mentioned process outer tube 130 can be used to provide a blocking effect. In detail, similar to the base 120, the process outer tube 130 can also be connected to the end of the substrate 110 away from the base 120. It should be noted that in this application, unless otherwise specified, unlike the open annular structure, the annular structures mentioned in this application are all closed annular structures.
[0025] In another embodiment of the present application, the process outer tube 130 is a cover-shaped structure as a whole, which is provided on the substrate 110 and connected to one end of the substrate 110 away from the base 120, so as to enclose a process chamber with the substrate 110 and the base 120, and the size of the process chamber in the direction parallel to the axial direction of the substrate 110 is relatively large, so as to provide a larger accommodating space for the wafer boat and other carriers 700. More specifically, both opposite ends of the substrate 110 can be provided with flanges, and one of the two flanges can be fixedly connected to the base 120, and the other can be fixedly connected to the process outer tube 130. Of course, in the process of connecting the substrate 110, the base 120 and the process outer tube 130, it is necessary to ensure that a sealed connection relationship is formed between the substrate 110 and the base 120, and between the substrate 110 and the process outer tube 130. Specifically, an annular sealing ring 400 can be set between the substrate 110 and the base 120, and between the substrate 110 and the process outer tube 130, so that the sealing ring 400 provides a sealing effect for the two interconnected ones, ensuring that the process chamber surrounded by the base, the base 120 and the process outer tube 130 has good sealing performance.
[0026] Since the base 120 in the semiconductor process equipment disclosed in the embodiment of the present application usually needs to be connected to other devices, the heat on the base 120 and the substrate 110 is easily lost, resulting in relatively low temperatures of the two. For this reason, in the embodiment of the present application, it is necessary to heat the base 120, especially the substrate 110. In the semiconductor process equipment disclosed in the embodiment of the present application, the heating component 200 can provide heating for the substrate 110, and for the process outer tube 130, as described above, the semiconductor process equipment can also include an external heating element 600, and the external heating element 600 is covered outside the process outer tube 130 to provide heating for the process outer tube 130. Specifically, the heating component 200 can include electric heating devices such as resistance wires, and in order to enable the resistance wire to form a specific structure and ensure that the heating component 200 can be easily installed in the receiving groove 111, the heating component 200 can also include solid heat-conducting materials such as ceramics, and by sintering, solid ceramics can be formed outside the resistance wire, thereby forming a heating component 200 with a relatively stable shape and state.
[0027] In detail, the heating assembly 200 disclosed in the embodiment of the present application is an annular structure. More intuitively, the structure formed by the solid heat-conducting material with the resistor wire embedded therein to directly provide the heating effect is specifically an annular structure. At the same time, the substrate 110 is provided with a receiving groove 111, which is also an annular structure, and the receiving groove 111 is provided with a port 112 located at one end of the substrate 110 facing the base 120, so that the heating assembly 200 of the annular structure can be installed in the annular receiving groove 111 from the port 112 of the receiving groove 111, so that the heating assembly 200 can provide heating for the substrate 110 from any position on the circumference of the substrate 110, which makes the heating efficiency of the substrate 110 relatively high, and makes the heating effect of the substrate 110 at different positions along its own axial distribution basically the same, that is, the heating effect of the upper and lower parts of the substrate 110 is the same, thereby achieving the purpose of improving the process effect. It should be noted that the direction parallel to the axial direction of the substrate 110 can usually be a vertical direction.
[0028] Of course, in the process of forming the receiving groove 111, the receiving groove 111 can be extended as far as possible to the other end of the base 110 away from the base 120, thereby ensuring that the heating efficiency and effect of the end of the base 110 away from the base 120 are relatively high.
[0029] As described above, a sealing ring 400 can be arranged between the substrate 110 and the process outer tube 130 to enhance the reliability of the sealing connection relationship between the two. Since a heating component 200 is arranged in the substrate 110, in order to prevent the sealing ring 400 from being heated to a high temperature, a cooling groove 116 can be formed in the substrate 110, and the cooling groove 116 is located on the side of the sealing ring 400 close to the base 120. By passing a coolant into the cooling groove 116, the cooling groove 116 can provide cooling for the sealing ring 400 from below the sealing ring 400, thereby preventing the sealing ring 400 from being deformed or even melted due to heat, which would cause the sealing relationship between the substrate 110 and the process outer tube 130 to fail. Based on the above situation, in the process of designing the receiving groove 111, the receiving groove 111 can be extended along the direction parallel to the axial direction of the base 110 to the side of the cooling groove 116 away from the sealing ring 400 and the groove wall toward the side of the sealing ring 400. In layman's terms, taking the direction parallel to the axial direction of the base 110 as the vertical direction, in the embodiment of the present application, the receiving groove 111 can be extended to a position higher than the bottom of the cooling groove 116, so that as many positions in the base 110 as possible can be directly heated by the heating component 200 instead of being heated by heat conduction, thereby further improving the heating efficiency and heating uniformity of the entire base 110.
[0030] Of course, the heating component 200 needs to be powered on to work, so the heating component 200 is provided with a power cable 220. By connecting the power cable 220 to a power source, the heating component 200 can work normally to provide a heating effect. Since the port 112 of the receiving groove 111 on the base 110 is arranged on the side where the base 120 is located, in order to ensure that the power cable 220 can be normally connected to an external power source, a through hole can be arranged in the base 120 at a position facing the port 112, and the power cable 220 can extend through the aforementioned through hole to the side of the base 120 away from the base 110, and be connected to an external power source.
[0031] In the actual processing process, the base 120 may need to be connected to other devices, and even the position of the base 120 may need to be changed during the process. In order to prevent the power cable 220 from hindering the assembly of the base 120, in another embodiment of the present application, a first through hole 113 may be provided on the side wall of the base 110, so that one end of the power cable 220 of the heating component 200 can pass through the first through hole 113 and extend out of the base 110, ensuring that the power cable 220 can be connected to an external power source to supply power to the heating component 200. Specifically, the parameters such as the shape and size of the first through hole 113 can be selected according to the actual parameters such as the cross-sectional shape and size of the power cable 220, which are not limited herein.
[0032] At the same time, in order to obtain the heating condition of the heating component 200 and provide a reference for controlling the working condition of the heating component 200, as described above, the semiconductor process equipment disclosed in the embodiment of the present application includes a temperature measuring component 310, which can be specifically a temperature measuring thermocouple, which needs to be in contact with the structure to be measured to measure the actual temperature of the structure to be measured.
[0033] To this end, in the semiconductor process equipment disclosed in the embodiment of the present application, the side wall of the substrate 110 is further provided with a second through hole 114, and the heating component 200 is provided with a third through hole 211a. In the process of assembling the semiconductor process equipment, after the heating component 200 is installed in the receiving groove 111 through the port 112, the second through hole 114 and the third through hole 211a can be made to face each other by rotating the heating component 200. After that, the temperature measuring component 310 can be installed by passing the second through hole 114 from the outside of the substrate 110 and extending into the third through hole 211a, so that the temperature measuring component 310 can be used to measure the temperature of the part of the substrate 110 close to the process chamber, and the temperature information can be used to provide a reference for the control of the heating component 200. Specifically, the shapes and sizes of the second through hole 114 and the third through hole 211a can be flexibly determined based on the actual parameters of the temperature measuring component 310, which are not limited here.
[0034] The embodiment of the present application discloses a semiconductor process equipment, wherein a base 120 is connected to one end of a substrate 110, and an annular receiving groove 111 is sandwiched between the inner and outer surfaces of the annular substrate 110, and the receiving groove 111 is used to provide a receiving space for a heating component 200, so that the heating component 200 can be installed into the receiving groove 111 from a port 112 of the receiving groove 111 located at one end of the substrate 110 facing the base 120, so that the annular heating component 200 can be used to provide heating for the substrate 110, so that the heating efficiency of the substrate 110 is relatively high, which can also improve the heating effect of the substrate 110 at different positions along its own axis, so that the heating temperature at different positions on the substrate 110 can meet the requirements.
[0035] At the same time, the side wall of the substrate 110 is provided with a first through hole 113, and the first through hole 113 can be used to allow the power cable 220 of the heating component 200 to extend out of the substrate 110 to connect with the power supply, thereby ensuring that the heating component 200 can work normally. At the same time, the side wall of the substrate 110 is also provided with a second through hole 114, and the heating component 200 is provided with a third through hole 211a. By arranging the second through hole 114 and the third through hole opposite to each other, the temperature measuring component 310 of the semiconductor process equipment can pass through the second through hole 114 and extend into the third through hole 211a, thereby ensuring that the temperature measuring component 310 can measure the temperature of the substrate 110, and is used to feedback control the working condition of the heating component 200, thereby improving the heating accuracy of the substrate 110.
[0036] As described above, the heating component 200 is an annular structure, and the size of the heating component 200 in the direction parallel to the axial direction of the substrate 110 can be comparable to the size of the receiving groove 111. Optionally, the heating component 200 is an integral structure, and is connected to an external power source via a power cable 220, so that the heating power at different positions on the heating component 200 is substantially the same.
[0037] Considering that when the heater 210 is not working, the temperature at different positions on the substrate 110 may be different due to certain factors. Therefore, in another embodiment of the present application, the heating assembly 200 may include multiple heaters 210, and the multiple heaters 210 are distributed in the receiving groove 111 along the axial direction of the substrate 110. By providing each heater 210 with a temperature measuring component 310 and a power cable 220, the multiple heaters 210 can work independently. Accordingly, the temperature at the positions corresponding to the multiple heaters 210 in the substrate 110 can also be detected by the multiple temperature measuring components 310, so that the multiple parts of the substrate 110 distributed along its own axial direction can be heated by the multiple heaters 210. On the one hand, the temperature uniformity at different positions on the substrate 110 can be relatively higher. On the other hand, if there is a corresponding demand, the temperature of the multiple parts of the substrate 110 distributed along its own axial direction can be different through the multiple heaters 210, which can further improve the application range of semiconductor process equipment.
[0038] Specifically, the sizes of the multiple heaters 210 in the axial direction of the substrate 110 may be different. In order to improve the control accuracy of the temperature of the substrate 110, the sizes of the multiple heaters 210 in the axial direction of the substrate 110 may be the same, which can also reduce the difficulty of installing the multiple heaters 210 and improve the assembly efficiency of the semiconductor process equipment. Of course, in the case where each heater 210 is provided with a temperature measuring element 310 and a power cable 220, in order to ensure that each temperature measuring element 310 and each power cable 220 can be installed normally, in the process of forming the substrate 110 and the heating element, the number of the first through hole 113, the second through hole 114 and the third through hole 211a can be multiple, so as to ensure that any power cable 220 can extend out of the substrate 110 through the first through hole 113, and any temperature measuring element 310 can extend into the corresponding position in the substrate 110 through the corresponding second through hole 114 and the third through hole 211a to measure the temperature at the position.
[0039] In order to further improve the control accuracy of the temperature at different positions on the substrate 110, in the embodiment of the present application, any heater 210 can include multiple heating parts 211, and the multiple heating parts 211 in the same heater 210 are distributed along the circumference of the substrate 110, that is, the multiple heating parts 211 are connected to each other and form a heater 210 with a ring structure. At the same time, by providing the multiple heating parts 211 with temperature measuring components 310 and power cables 220, each heating part 211 in the same heater 210 also has the ability to heat independently, which makes the heating accuracy of the entire heating assembly 200 for different positions on the substrate 110 relatively higher, thereby further improving the temperature control accuracy of the substrate 110, and thus improving the process effect.
[0040] Accordingly, when the above technical solution is adopted, the multiple first through holes 113 can be arranged in a one-to-one correspondence with the multiple power connection cables 220, and the multiple second through holes 114 and the multiple third through holes 211a can be arranged in a one-to-one correspondence with the multiple temperature measuring components 310, so that only one power connection cable 220 is arranged in any first through hole 113, and a temperature measuring component 310 is also arranged in any second through hole 114 and any third through hole 211a, which can reduce the difficulty of installing the power connection cables 220 and the temperature measuring components 310, and can prevent the temperature measuring components 310 from interfering with each other.
[0041] In addition, in the process of forming the above-mentioned heating part 211, the positions of the electric heating devices such as resistance wires in the multiple heating parts 211 can be fixed in advance based on the specific size and other parameters of the heating assembly 200, and then, the solid heat-conducting materials such as ceramics can be coated on the outside of the multiple electric heaters 210 by sintering or other methods, so that the multiple heating parts 211 are connected as a whole and the heating assembly 200 is formed. As for the connection between the power cable 220 and the heating part 211, optionally, in the process of forming the heating part 211, a joint can be set at the end of the electric heater 210, and after the heating assembly 200 is formed, a part of the joint is exposed on the surface of the heating assembly 200; accordingly, a device corresponding to the above-mentioned joint is set at one end of the power cable 220, and after the heater 210 is installed in the receiving groove 111, the power cable 220 is electrically connected to the electric heater 210 through a plug.
[0042] In the above embodiment, the multiple heating parts 211 in any heater 210 can form a fixed connection relationship during the molding process, and during the installation of the heating component 200, the multiple heating parts 211 in any heater 210 can be installed into the receiving groove 111 at the same time. That is, the multiple heating parts 211 are independent of each other at the heating control level, but are still connected to each other at the structural level, and appear as different parts on the same heater 210.
[0043] In the semiconductor process equipment disclosed in the embodiment of the present application, Figure 3 As shown, in order to obtain the temperature conditions in the process chamber of the semiconductor process equipment, it is usually necessary to set up an intra-cavity temperature detection component 320, and accordingly, the intra-cavity temperature detection component 320 also needs to be connected to an external power supply. To this end, in the present application, a perforation can be set in the base 120 at a position corresponding to the cavity, and the intra-cavity temperature detection component 320 can be extended into the process chamber through the aforementioned perforation to measure the temperature conditions in the process chamber. Of course, corresponding means need to be adopted to make the perforation sealed to ensure that the process chamber has an independent process environment.
[0044] Considering that during the operation of the semiconductor process equipment, the side of the base 120 that is away from the substrate 110 may usually need to be connected to other devices, and even the position of the base 120 may change, in another embodiment of the present application, the semiconductor process equipment also includes a mounting tube 140, one end of which is located on the outside of the substrate 110, and the other end of the mounting tube 140 passes through the substrate 110 and is connected to the inner side of the substrate 110, that is, the mounting tube 140 is connected to the process chamber. In this case, the mounting tube 140 can be used to install the cavity temperature detection member 320, and ensure that the cavity temperature detection member 320 can be extended into the mounting cavity, so that the cavity temperature detection member 320 can detect the temperature in the process chamber. In addition, in order to make the connection reliability between the mounting tube 140 and the substrate 110 relatively high, the mounting tube 140 and the substrate 110 can be fixedly connected in a non-detachable manner, which also makes the sealing reliability between the two relatively high, thereby preventing the process chamber from being connected to the accommodating chamber through the location of the mounting tube 140.
[0045] In the case where the mounting tube 140 adopts the above-mentioned technical solution, in order to prevent the existence of the mounting tube 140 from interfering with the normal installation of the heating component 200, an optional embodiment is to locate the mounting tube 140 at one end of the receiving groove 111 away from the port 112 of the receiving groove 111 in a direction parallel to the axial direction of the base 110. This makes it possible for the mounting tube 140 and the heating component 200 to not interfere with each other. In this case, the heating component 200 can still include an inseparable annular structure.
[0046] In another embodiment of the present application, in order to improve the heating efficiency of the substrate 110 and make the heating effect of most areas on the substrate 110 relatively good, the installation tube 140 can be set through the receiving groove 111, that is, in the direction parallel to the axial direction of the substrate 110, the installation tube 140 and the receiving groove 111 interfere with each other. In this case, in order to ensure that the heating component 200 can still be normally installed from the port 112 of the receiving groove 111 into the receiving groove 111, in the embodiment of the present application, the heating component 200 with an annular structure can be provided with an avoidance gap 211b. In the case where the heating component 200 includes a plurality of heaters 210 distributed along the axial direction of the substrate 110, at least one of the plurality of heaters 210 can be provided with an avoidance gap 211b, so that the installation tube 140 passes through the avoidance gap 211b, ensuring that the installation tube 140 does not hinder the normal installation of the heater 210.
[0047] Specifically, an avoidance notch 211b can be provided on at least one heater 210, which passes through a direction parallel to the axial direction of the substrate 110. The size of the avoidance notch 211b corresponds to the size of the mounting tube 140, so that the heater 210 can correspond to the mounting tube 140; of course, when the size of the heater 210 along the direction parallel to the aforementioned axial direction is smaller than the size of the mounting tube 140, several of the multiple heaters 210 can also be provided with avoidance notches 211b, so that several of the multiple heaters 210 correspond to the mounting tube 140, and the avoidance notch 211b on each heater 210 corresponds to the size of the corresponding part in the mounting tube 140. This article will not provide a detailed introduction to this.
[0048] In another embodiment of the present application, in order to improve the heating uniformity of the heater 210 provided with the avoidance notch 211b in the circumferential direction of the substrate 110 as much as possible, optionally, the avoidance notch 211b is arranged non-through on the heater 210 in a direction parallel to the axial direction of the substrate 110. That is, the avoidance notch 211b on the heater 210 provided with the avoidance notch 211b does not penetrate the heater 210 in a direction parallel to the axial direction of the substrate 110, so that the position where the avoidance notch 211b in the heater 210 is located can also be used to provide a heating effect, so as to improve the heating uniformity of the heater 210 in the circumferential direction of the substrate 110. Of course, in the semiconductor process equipment disclosed in the embodiment of the present application, the avoidance notch 211b in the heater 210 provided with the avoidance notch 211b needs to be connected to one end of the heater 210 in a direction parallel to the axial direction of the substrate 110, so as to ensure that the avoidance notch 211b can form an embedded matching relationship with the mounting tube 140 in a direction parallel to the axial direction of the substrate 110. Accordingly, when adopting the technical solution disclosed in the embodiment of the present application, both heaters 210 can include an avoidance notch 211b, and each avoidance notch 211b can be non-through-set on the corresponding heater 210, and in the process of assembling the semiconductor process equipment, the two avoidance notches 211b can be butted together, which can provide avoidance space for the mounting tube 140.
[0049] At the same time, in order to ensure that the heater 210 adopting the above structure can be normally installed from the port 112 to the receiving groove 111, in the embodiment of the present application, one of the heaters 210 provided with the above avoidance notch 211b includes a first ring segment 210a and a second ring segment 210b, and the first ring segment 210a and the second ring segment 210b are separately arranged, so that during the installation process of the heater 210, at least a portion of the first ring segment 210a provided with the avoidance notch 211b can be first installed into the receiving groove 111. 11, and then, according to the setting form and position of the avoidance notch 211b and other parameters, the first ring segment 210a is rotated in the accommodating groove 111 accordingly, so that the avoidance notch 211b can correspond to the position of the mounting tube 140, and then the second ring segment 210b is installed in the accommodating groove 111, and the first ring segment 210a and the second ring segment 210b are connected to form an annular heater 210 in the circumferential direction of the substrate 110, so as to provide the substrate 110 with a relatively uniform heating effect along the circumferential direction of the substrate 110.
[0050] The avoidance gap 211b can be entirely disposed on the first ring segment 210a, or a portion of the avoidance gap 211b can be disposed on the first ring segment 210a, and another portion of the avoidance gap 211b can be disposed on the second ring segment 210b, and during the installation of the second ring segment 210b, the two portions of the avoidance gap 211b are butted against each other, thereby forming a complete avoidance gap 211b. The angles at which the first ring segment 210a and the second ring segment 210b extend in the circumferential direction of the base 110 can be flexibly determined according to actual needs, and are not limited herein.
[0051] In addition, as described above, when the avoidance notch 211b adopts a non-penetrating structure, the avoidance notch 211b needs to be provided on both heaters 210. In this case, both heaters 210 may include the first ring segment 210a and the second ring segment 210b. In another embodiment of the present application, in order to reduce the overall processing difficulty of the heater 210 and improve the assembly efficiency of the heater 210, only one heater 210 may include the first ring segment 210a and the second ring segment 210b, and in the process of assembling the heater 210, the heater 210 including the first ring segment 210a and the second ring segment 210b is provided on the side of the other heater 210 provided with the avoidance notch 211b away from the base 120.
[0052] Of course, for the heater 210 with the avoidance notch 211b, in order to further improve the heating uniformity in the circumferential direction of the substrate 110, in another embodiment of the present application, the heater 210 with the avoidance notch 211b can include a plurality of heating parts 211. By providing each heating part 211 with a power connection cable 220 and a temperature measuring component 310, the heating parameters of each heating part 211 can be made independent of each other, and based on the measurement results of each of the plurality of temperature measuring components 310, the heating parameters of each heating part 211 can be correspondingly controlled, so that the heating performance at each position on the heater 210 is basically the same.
[0053] As described above, the semiconductor process equipment includes a process outer tube 130, and the process outer tube 130 is connected to one end of the substrate 110 away from the base 120, and the process outer tube 130, the substrate 110 and the base 120 form a process chamber; at the same time, in order to improve the sealing reliability between the process outer tube 130 and the substrate 110, an annular sealing ring 400 can be arranged between the process outer tube 130 and the substrate 110, and a cooling groove 116 is arranged in the substrate 110 to provide cooling for the annular sealing ring 400.
[0054] Of course, in order to improve the position stability of the annular sealing ring 400 between the process outer tube 130 and the base 110, and thus improve the reliability of the sealing relationship between the process outer tube 130 and the base 110, in the embodiment of the present application, a limiting groove 115 can also be provided on the base 110, and the limiting groove 115 is recessed and provided on the side surface of the base 110 facing the process outer tube 130, so that a part of the sealing ring 400 between the base 110 and the process outer tube 130 can be embedded in the limiting groove 115, so that the limiting groove 115 can provide a certain limiting effect for the sealing ring 400. Specifically, the limiting groove 115 and the sealing ring 400 are both annular structures to improve the sealing reliability between the base 110 and the process outer tube 130, and the dimensional parameters such as the groove depth and groove width of the limiting groove 115 can be determined according to the size of the sealing ring 400, which is not limited here.
[0055] In addition, when the base 110 is provided with a cooling groove 116, the cooling groove 116 can also be an annular structure, and in order to ensure that the coolant in the cooling groove 116 can provide cooling normally, in the present application, the cooling groove 116 can be provided in the base 110. At the same time, at least a part of the cooling groove 116 can be located on the side of the limiting groove 115 in the base 110 facing the base 120. In this case, the coolant in the cooling groove 116 can provide cooling for the sealing ring 400 in the limiting groove 115 from the bottom of the limiting groove 115, ensuring that the efficiency and effect of cooling the sealing ring 400 are relatively good.
[0056] Specifically, the cross section of the cooling groove 116 may be a rectangular structure. Of course, in other embodiments of the present application, the cross section of the cooling groove 116 may also be a circular or elliptical structure. In order to further limit the measurement on the base 110 to be transmitted to the sealing ring 400 in the limiting groove 115, in a specific embodiment of the present application, the cooling groove 116 may include a first groove body 116a and a second groove body 116b, and the first groove body 116a and the second groove body 116b are connected to each other. In addition, the first groove body 116a is located on the side of the limiting groove 115 facing the base 120, and the second groove body 116b is connected to one end of the first groove body 116a close to the inner side of the base 110, that is, the first groove body 116a is located below the limiting groove 115, and the second groove body 116b is located on the inner side of the limiting groove 115. In this case, the first groove body 116a and the second groove body 116b can respectively isolate the heat of the base 110 from the bottom and the inner side of the limiting groove 115, so as to further prevent the total amount of heat transferred from the base 110 to the sealing ring 400 in the limiting groove 115, thereby improving the service life and sealing effect of the sealing ring 400.
[0057] Specifically, the dimensions and other parameters of the first trough body 116a and the second trough body 116b in the corresponding direction can be determined according to the actual situation, and this document does not limit this. Among them, the second trough body 116b extends in the direction parallel to the axial direction of the substrate 110 in the direction of the process outer tube 130. It should be noted that in the present application, along the direction parallel to the axial direction of the substrate 110, the end of the second trough body 116b away from the base 120 can be extended to a position exceeding the receiving groove 111, that is, relative to the receiving groove 111, the distance between the second trough body 116b and the end face of the substrate 110 away from the base 120 is relatively smaller, which further improves the cooling effect on the sealing ring 400 on the one hand, and prevents the heating efficiency of the part of the substrate 110 located on the side of the receiving groove 111 away from the base 120 from being too high, which has an adverse effect on the heating uniformity of the substrate 110.
[0058] As described above, an annular sealing ring may also be provided between the substrate 110 and the base 120 to make the sealing reliability between the substrate 110 and the base 120 relatively higher. As for the position of the aforementioned sealing ring, in the embodiment of the present application, along the direction perpendicular to the axial direction of the substrate 110, the sealing ring may be provided on the inner side of the receiving groove 111, that is, the receiving groove 111 is provided around the outer side of the sealing ring, so as to utilize the aforementioned sealing ring to isolate the process chamber from the receiving groove 111, thereby ensuring that the independence of the process chamber is relatively higher. Of course, in another embodiment of the present application, another sealing ring may be further provided on the outer side of the receiving groove 111, which may make the sealing of the receiving groove 111 relatively higher, thereby preventing the external environment from adversely affecting the normal operation of the heating component 200.
[0059] As described above, the base 110 is provided with a receiving groove 111, and a port 112 is provided at one end of the receiving groove 111 close to the base 120, so that the heating component 200 can be installed in the receiving groove 111 from the port 112. In addition, by connecting the base 110 and the base 120, the base 120 can be used to block the port 112 of the receiving groove 111, thereby ensuring that the installation stability of the heating component 200 is relatively high.
[0060] In another embodiment of the present application, the semiconductor process equipment further includes a package 500. At the same time, a mounting groove 117 is provided at one end of the base 110 where the port 112 is located, and the mounting groove 117 is recessed in the base 110, so that the mounting groove 117 can provide an installation space for the package 500. Furthermore, during the assembly process of the semiconductor process equipment, after the heating component 200 is installed in the receiving groove 111, the package 500 can be embedded and fixed in the mounting groove 117, so that the receiving groove 111 is blocked by the package 500, which can further improve the installation stability of the heating component 200 on the one hand, and can also make the sealing of the receiving groove 111 relatively higher on the other hand, further preventing the receiving groove 111 from communicating with the process chamber and affecting the normal formation of the process environment in the process chamber. Of course, when the package 500 blocks the installation groove 117 and seals the receiving groove 111, a sealing ring 400 can be provided on the outside of the receiving groove 111 along the axial direction perpendicular to the substrate 110 to isolate the process chamber from the space outside the semiconductor process equipment and ensure the independence of the process chamber.
[0061] In the case where the semiconductor process equipment includes the package 500, in order to reduce the difficulty of connecting the substrate 110 and the base 120, by designing parameters such as the depth of the mounting groove 117 and the thickness of the package 500, when the package 500 is embedded in the mounting groove 117, the surface of the package 500 facing the base 120 can be flush with the surface of the substrate 110 along the direction parallel to the axial direction of the substrate 110, thereby preventing the package 500 from hindering the connection between the base 120 and the substrate 110 and improving the connection reliability between the base 120 and the substrate 110. Specifically, the package 500 and the substrate 110 can both be formed of materials such as metal, and after the heating component 200 is installed in the receiving groove 111, the package 500 can be fixedly connected to the substrate 110 by welding or other methods, thereby ensuring that the connection reliability between the package 500 and the substrate 110 is relatively higher.
[0062] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.
[0063] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.
Claims
1. A semiconductor process equipment, characterized in that: The invention comprises a substrate, a base, a heating component and a temperature measuring element, wherein the substrate and the heating component are both annular structural components, the base is connected to one end of the substrate, an annular accommodating groove is sandwiched between the inner surface and the outer surface of the substrate, and the accommodating groove is provided with a port located at one end of the substrate facing the base, and the heating component can be installed in the accommodating groove from the port; The side wall of the substrate is provided with a first through hole and a second through hole, and the heating component is provided with a third through hole. One end of the power cable of the heating component passes through the first through hole and extends out of the substrate, and the temperature measuring component passes through the second through hole and extends into the third through hole to measure the temperature of the substrate.
2. The semiconductor process equipment according to claim 1, characterized in that: The heating assembly includes a plurality of heaters, which are distributed in the receiving groove along the axial direction of the substrate. The number of the first through hole, the second through hole and the third through hole are all multiple, and each of the heaters is equipped with the temperature measuring component and the power cable.
3. The semiconductor process equipment according to claim 2, characterized in that: Any of the heaters comprises a plurality of heating parts distributed along the circumference of the substrate and connected to each other, each of the heating parts is provided with the temperature measuring component and the power connecting cable, a plurality of the first through holes correspond one-to-one to a plurality of the power connecting cables, and a plurality of the second through holes and a plurality of the third through holes correspond one-to-one to a plurality of the temperature measuring components.
4. The semiconductor process equipment according to claim 2, characterized in that: The semiconductor process equipment also includes a mounting tube, one end of which is located on the outside of the substrate, and the other end of which passes through the substrate and is connected to the inside of the substrate. The mounting tube is used to install an intra-cavity temperature detection component, and at least one of the multiple heaters is provided with an avoidance gap, and the mounting tube passes through the avoidance gap.
5. The semiconductor process equipment according to claim 4, characterized in that: Along the axial direction parallel to the substrate, the avoidance notch is non-throughout arranged on the heater, and one of the heaters provided with the avoidance notch includes a first ring segment and a second ring segment, the first ring segment and the second ring segment are separately arranged, and the two are connected in the circumferential direction of the substrate to form the annular heater.
6. The semiconductor process equipment according to claim 1, characterized in that: The semiconductor process equipment comprises a process outer tube, which is connected to one end of the substrate away from the base, and an annular sealing ring is sandwiched between the process outer tube and the substrate.
7. The semiconductor process equipment according to claim 6, characterized in that: The base is provided with a limiting groove and a cooling groove, the limiting groove is recessed on the side surface of the base facing the process outer tube, and a part of the sealing ring is embedded in the limiting groove; the cooling groove is an annular structure, and at least a part of the cooling groove is located on the side of the limiting groove in the base facing the base, and in a direction parallel to the axial direction of the base, a part of the accommodating groove is located on the side of the groove wall in the cooling groove close to the base away from the base.
8. The semiconductor process equipment according to claim 7, characterized in that: The cooling groove includes a first groove body and a second groove body which are connected to each other. The first groove body is located on the side of the limiting groove facing the base, and the second groove body is connected to an end of the first groove body close to the inner side of the base, and the second groove body extends in a direction parallel to the axial direction toward the direction where the process outer tube is located.
9. The semiconductor process equipment according to claim 1, characterized in that: In a direction perpendicular to the axial direction of the base, an annular sealing ring is provided on the inner side of the accommodating groove, and the annular sealing ring is clamped between the base and the base.
10. The semiconductor process equipment according to claim 1, characterized in that: The semiconductor process equipment also includes a package, an installation groove is provided at one end of the base where the port is located, the installation groove is recessed in the base, and the package is embedded and fixed in the installation groove, the package is used to seal the port of the receiving groove, and in a direction parallel to the axial direction of the base, the surface of the package facing the base is flush with the surface of the base.