Semiconductor packaging structure
By introducing wire bonding solder balls, wire bonding pads, wire bonding wires and electromagnetic shielding layers into the semiconductor packaging structure, the problem of electromagnetic interference in the system-level packaging structure is solved, and an efficient electromagnetic shielding effect is achieved.
Patent Information
- Application Number
- CN202420672147.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-02
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2034-04-02
AI Technical Summary
In the prior art, the electromagnetic interference problem between chips and devices in system-level packaging structures is becoming increasingly prominent, and how to achieve reliable electromagnetic shielding has become a solution pursued by technicians.
A semiconductor packaging structure is provided, including a substrate, a wire bonding pad, a wire bonding ball, a wire bonding wire, a plastic sealing layer and an electromagnetic shielding layer. The wire bonding wire is formed by connecting the wire bonding balls and the wire bonding pads, and connected to the wire bonding wire through an electromagnetic shielding layer to achieve electromagnetic shielding.
Through the formation of lead bonding wires and the connection of electromagnetic shielding layers, the reliability of electromagnetic shielding and the quality and reliability of semiconductor packaging structures are significantly improved, effectively solving the problem of electromagnetic interference in system-level packaging structures.
Smart Images
Figure CN222619761U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, and in particular to a semiconductor packaging structure. Background Art
[0002] With the continuous update of the demand for electronic products, the products are becoming more and more complex, and the chip packaging technology has developed rapidly. The integration of chip packaging is getting higher and higher, and more and more are moving towards the system-in-package (SIP) structure. In the system-in-package structure, multiple RF chips, analog chips or passive components are integrated together, and the distance between chips and devices is gradually reduced, resulting in the problem of electromagnetic interference (EMI) between devices in the SIP becoming more and more prominent. How to achieve reliable electromagnetic shielding is a problem that technicians in this field have always been pursuing to solve. Utility Model Content
[0003] The utility model aims to provide a semiconductor packaging structure to solve the problem of increasingly serious electromagnetic interference in the packaging structure of the prior art.
[0004] In order to solve the above technical problems, the utility model provides a semiconductor packaging structure, the semiconductor packaging structure comprising:
[0005] A substrate having a plurality of wire bonding pads;
[0006] at least one wire bonding solder ball, wherein the wire bonding solder ball is disposed on the wire bonding pad, and the height of the wire bonding solder ball is between 10 μm and 50 μm;
[0007] at least one wire bonding wire, at least one end of the wire bonding wire being disposed on the wire bonding solder ball;
[0008] a plastic encapsulation layer, the plastic encapsulation layer covering the wire bonding wire and the substrate and exposing a portion of the surface of the wire bonding wire; and
[0009] An electromagnetic shielding layer covers the plastic packaging layer and is connected to the lead bonding wire.
[0010] Optionally, in the semiconductor packaging structure, the number of wire bonding pads is n, the number of wire bonding balls is n / 2, and the number of wire bonding wires is n / 2, wherein one end of the wire bonding wire is arranged on the wire bonding ball and the other end is arranged on the wire bonding pad, and n is a natural number greater than or equal to 2.
[0011] Optionally, in the semiconductor packaging structure, the number of wire bonding pads is n, the number of wire bonding solder balls is n, and the number of wire bonding wires is n / 2, wherein the two ends of the wire bonding wires are respectively arranged on different wire bonding solder balls, and n is a natural number greater than or equal to 2.
[0012] Optionally, in the semiconductor packaging structure, the wire bonding wire is an arc line.
[0013] Optionally, in the semiconductor packaging structure, the plane where the wire bonding wires are located is perpendicular to the plane where the substrate is located or is inclined relative to the plane where the substrate is located.
[0014] Optionally, in the semiconductor packaging structure, the number of wire bonding pads is n, the number of wire bonding balls is n, and the number of wire bonding wires is n, wherein one end of the wire bonding wire is arranged on the wire bonding ball and the other end is a free end, and n is a natural number greater than or equal to 2.
[0015] Optionally, in the semiconductor packaging structure, the height of the wire bonding wire is between 200 μm and 600 μm.
[0016] Optionally, in the semiconductor packaging structure, the electromagnetic shielding layer covers the top surface and side surfaces of the plastic packaging layer and also extends to cover the side surfaces of the substrate.
[0017] Optionally, in the semiconductor packaging structure, a plurality of chips and / or devices are formed on the substrate, and at least one wire bonding wire is arranged between at least two of the chips and / or devices.
[0018] Optionally, in the semiconductor packaging structure, the wire bonding solder balls are metal wire bonding solder balls, and the wire bonding wires are metal wire bonding wires.
[0019] In the semiconductor packaging structure provided by the utility model, it includes at least one wire bonding solder ball, the wire bonding solder ball is arranged on the wire bonding pad; at least one wire bonding wire, at least one end of the wire bonding wire is arranged on the wire bonding solder ball; an electromagnetic shielding layer, the electromagnetic shielding layer is connected to the wire bonding wire, thereby electromagnetic shielding can be achieved through the wire bonding wire. Further, at least one end of the wire bonding wire is connected to the wire bonding pad through the wire bonding solder ball, thereby facilitating the formation of the wire bonding wire and improving the connection reliability between the wire bonding wire and the substrate, thereby improving the reliability of electromagnetic shielding and the quality and reliability of the semiconductor packaging structure. Among them, the height of the wire bonding solder ball is between 10μm and 50μm, thereby facilitating the formation of the wire bonding solder ball to obtain a high-quality wire bonding solder ball, and facilitating the subsequent formation of the wire bonding wire, thereby improving the quality and reliability of the wire bonding wire. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a schematic diagram of the structure after the wire bonding solder balls are formed in the first embodiment of the utility model.
[0021] Figure 2 It is a schematic diagram of the structure after the lead bonding wire is formed in the first embodiment of the utility model.
[0022] Figure 3 It is a schematic diagram of the structure after the plastic sealing layer is formed in the first embodiment of the utility model.
[0023] Figure 4 It is a schematic diagram of the structure after the electromagnetic shielding layer is formed in the first embodiment of the utility model.
[0024] Figure 5 It is a structural schematic diagram of a semiconductor packaging structure of the second embodiment of the present utility model.
[0025] Figure 6 It is a structural schematic diagram of a semiconductor packaging structure of a third embodiment of the present utility model.
[0026] The reference numerals are described as follows:
[0027] 10 - semiconductor packaging structure; 100 - substrate; 101 - wire bonding pad; 110 - wire bonding solder ball; 120 - wire bonding wire; 130, 130' - plastic packaging layer; 140 - electromagnetic shielding layer.
[0028] 20 - semiconductor packaging structure; 200 - substrate; 201 - wire bonding pad; 210 - wire bonding solder ball; 220 - wire bonding wire; 230 - plastic sealing layer; 240 - electromagnetic shielding layer.
[0029] 30 - semiconductor packaging structure; 300 - substrate; 301 - wire bonding pad; 310 - wire bonding solder ball; 320 - wire bonding wire; 330 - plastic sealing layer; 340 - electromagnetic shielding layer. DETAILED DESCRIPTION
[0030] The semiconductor packaging structure proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer according to the following description. It should be noted that the accompanying drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0031] The terms used in this utility model are only for the purpose of describing specific embodiments and are not intended to limit the utility model. Unless otherwise defined in the application document, the technical terms or scientific terms used in this utility model should have the usual meaning understood by people with ordinary skills in the field to which the utility model belongs. The "first", "second" and similar words used in the specification and claims of this utility model do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, "one" or "an" and other similar words do not indicate a quantity limitation, but rather indicate the presence of at least one. "Multiple" or "several" means two or more. Unless otherwise specified, "upper / upper layer"
[0032] and / or "lower / lower layer" and similar terms are only for convenience of description and are not limited to one location or one
[0033] The words "include" or "comprising" and the like mean that the elements or structures listed before "include" or "comprising" include the elements or structures listed after "include" or "comprising".
[0034] The term "connected" or "connected" or similar terms are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect.
[0035] The terms "a", "an", "said" and "the" are also intended to include plural forms unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes one or more
[0036] Any or all possible combinations of associated listed items.
[0037] The core idea of the utility model is to provide a semiconductor packaging structure, comprising at least one wire bonding solder ball, wherein the wire bonding solder ball is arranged on a wire bonding pad; at least one wire bonding wire, wherein the wire bonding solder ball is arranged on a wire bonding pad;
[0038] At least one end of the wire bonding wire is disposed on the wire bonding solder ball; an electromagnetic shielding layer, the electromagnetic shielding layer is connected to the wire bonding wire, thereby electromagnetic shielding can be achieved through the wire bonding wire.
[0039] In a step, at least one end of the wire bonding wire is connected to a wire bonding solder ball and a wire bonding pad, which not only facilitates the formation of the wire bonding wire, but also improves the connection reliability between the wire bonding wire and the substrate, thereby improving the reliability of electromagnetic shielding and the quality and reliability of the semiconductor packaging structure.
[0040] Next, the semiconductor packaging structure proposed by the present invention will be further described through the following embodiments.
[0041] One step description.
[0042] [Example 1]
[0043] Please refer to Figure 4 , which is a schematic diagram of the structure of the semiconductor packaging structure of the first embodiment of the utility model.
[0044] Figure 4 As shown, in the embodiment of the present application, the semiconductor packaging structure 10 includes: a substrate 100, the substrate 100 having a plurality of wire bonding pads 101; at least one wire bonding solder ball 110, the wire bonding solder ball 110 being arranged on the wire bonding pad 101; at least one wire bonding wire 120, at least one end of the wire bonding wire 120 being arranged on the wire bonding solder ball 110; a plastic encapsulation layer 130, the plastic encapsulation layer 130 covering the wire bonding wire 120 and the substrate 100, and exposing a portion of the surface of the wire bonding wire 120; and an electromagnetic shielding layer 140, the electromagnetic shielding layer 140 covering the plastic encapsulation layer 130 and being connected to the wire bonding wire 120.
[0045] For details, please refer to Figures 1 to 3 , which is a schematic diagram of a device structure formed by executing the method for manufacturing a semiconductor packaging structure according to the first embodiment of the utility model.
[0046] like Figure 1As shown, first, a substrate 100 is provided, and a plurality of wire bonding pads 101 are provided on the substrate 100. The substrate 100 may include a semiconductor substrate (not shown in the figure), on which a variety of functional devices may be formed, for example, an interconnection structure, a rewiring structure, etc. may be formed on the semiconductor substrate. Furthermore, a plurality of chips and / or devices (not shown in the figure) are formed on the substrate 100. For example, a plurality of RF chips may be formed on the substrate 100; for another example, one or more RF chips and one or more analog chips may be formed on the substrate 100, which is not limited in the present application.
[0047] Furthermore, the substrate 100 has a plurality of wire bonding pads 101, and the figure schematically shows eight wire bonding pads 101. The wire bonding pads 101 are made of metal, for example, gold, silver, tin, copper, etc.
[0048] Please continue to refer to Figure 1 Then, at least one wire bonding solder ball 110 is formed on the substrate 100, and the wire bonding solder ball 110 is disposed on the wire bonding pad 101. Figure 1 As shown, in the embodiment of the present application, the number of the wire bonding solder balls 110 is also eight, that is, the number of the wire bonding solder balls 110 is the same as the number of the wire bonding pads 101, each of the wire bonding solder balls 110 is arranged on the wire bonding pads 101 in a one-to-one correspondence, and each of the wire bonding solder balls 110 is electrically connected to the corresponding wire bonding pads 101.
[0049] Among them, the material of the wire bonding solder ball 110 is metal, for example, the material of the wire bonding solder ball 110 can be gold, silver, tin, copper, etc. Preferably, the material of the wire bonding solder ball 110 is the same as the material of the wire bonding pad 101, so as to improve the connection reliability between the two. Furthermore, the height of the wire bonding solder ball 110 is between 10μm and 50μm. In this way, it is convenient to form the wire bonding solder ball 110 and obtain a high-quality wire bonding solder ball 110, and it is also convenient to form the subsequent wire bonding wire, so as to improve the quality and reliability of the wire bonding wire. The wire bonding solder ball 110 can be formed on the wire bonding pad 101, for example, by ultrasonic oscillation.
[0050] Next, please refer to Figure 2At least one wire bonding wire 120 is formed on the substrate 100, and at least one end of the wire bonding wire 120 is disposed on the wire bonding solder ball 110. The material of the wire bonding wire 120 is metal, for example, the material of the wire bonding wire 120 may be gold, silver, tin, copper, etc. Preferably, the material of the wire bonding wire 120 is the same as that of the wire bonding solder ball 110, so as to improve the connection reliability between the two.
[0051] In the embodiment of the present application, the number of the wire bonding wires 120 is four, that is, the number of the wire bonding wires 120 is half the number of the wire bonding pads 101 , and both ends of the wire bonding wires 120 are electrically connected to the wire bonding pads 101 .
[0052] like Figure 2 As shown, the wire bonding wire 120 is an arc, and its two ends are respectively arranged on different wire bonding balls 110. Specifically, a base structure of a wire bonding wire can be formed on a wire bonding ball 110, and then a wire can be drawn from the base structure to form the wire bonding wire 120, and the wire bonding wire 120 is fixed to another wire bonding ball 110. Please continue to refer to Figure 2 In the embodiment of the present application, the wire bonding wire 120 is perpendicular to the substrate 100 , that is, the plane where the wire bonding wire 120 is located is perpendicular to the plane where the substrate 100 is located.
[0053] In the embodiment of the present application, a plurality of chips and / or devices are formed on the substrate 100, and at least one wire bonding wire 120 is arranged between at least two of the chips and / or devices. Preferably, one or more wire bonding wires 120 are arranged between two chips or two devices or one chip and one device where electromagnetic interference exists. Further, one or more wire bonding wires 120 may also be arranged on a chip or device side. Further, one or more wire bonding wires 120 may also be arranged at the required position of the substrate 100.
[0054] Preferably, the wire diameter of the wire bonding wire 120 is between 10 μm and 50 μm, and the height of the wire bonding wire 120 (i.e., the vertical distance from the highest point of the wire bonding wire 120 to the substrate 100) is between 200 μm and 600 μm. Thus, the electromagnetic shielding effect can be well achieved, the formation of the wire bonding wire 120 can be facilitated, and the wire bonding wire 120 with high quality and high reliability can be obtained.
[0055] Since the base structure is formed on the wire bonding solder ball 110, the wire bonding solder ball 110 is more prominent and obvious, which facilitates the formation of the base structure, thereby facilitating the formation of the wire bonding wire 120 and improving the quality and reliability of the formed wire bonding wire 120. Furthermore, since the wire bonding solder ball 110 has a certain height, the length of the wire bonding wire 120 of the same height is reduced, and accordingly, the difficulty of forming the wire bonding wire 120 can be reduced, and the quality and reliability of the formed wire bonding wire 120 can be improved.
[0056] Next, please refer to Figure 3 , forming a plastic encapsulation layer 130', the plastic encapsulation layer 130' covers the wire bonding wires 120 and the substrate 100. Specifically, a first mold (not shown in the figure) can be set on the substrate 100, the first mold is higher than the wire bonding wires 120, that is, there is a gap between the first mold and the top of the wire bonding wires 120. Then, the first mold can be used to pour the plastic encapsulation material to form a plastic encapsulation layer 130', the plastic encapsulation layer 130' covers the wire bonding wires 120 and the substrate 100.
[0057] Please refer to Figure 4 In an embodiment of the present application, after the plastic encapsulation layer 130' is formed, the first mold is then removed. Further, the plastic encapsulation layer 130' is ground or laser ablated (Laser Ablation) so that the plastic encapsulation layer 130 exposes a portion of the surface of the wire bonding wire 120. Here, a grinding process is adopted and stopped at the top of the wire bonding wire 120, and the plastic encapsulation layer 130 exposes the top of the wire bonding wire 120. In other embodiments of the present application, a grinding or laser ablation process can also be adopted to remove a portion of the thickness of the plastic encapsulation layer 130' while also removing a portion of the wire bonding wire 120, for example, removing the top of the wire bonding wire 120 and disconnecting the wire bonding wire 120, exposing a portion of the surface of the middle portion of the wire bonding wire 120.
[0058] Please continue to refer to Figure 4 Then, an electromagnetic shielding layer 140 is formed, and the electromagnetic shielding layer 140 covers the plastic encapsulation layer 130 and is connected to the wire bonding wire 120 through the exposed portion of the wire bonding wire 120. The electromagnetic shielding layer 140 can be formed by processes such as sputtering and deposition. The electromagnetic shielding layer 140 is made of metal, for example, the electromagnetic shielding layer 140 can be made of gold, silver, tin, copper, etc.
[0059] In the embodiment of the present application, the electromagnetic shielding layer 140 covers the top surface and the side surface of the plastic encapsulation layer 130 and also extends to cover the side surface of the substrate 100. This also facilitates the functional devices on the substrate 100 to achieve ground connection.
[0060] In the embodiment of the present application, electromagnetic shielding can be achieved through the wire bonding wire 120. Further, at least one end of the wire bonding wire 120 is connected to the wire bonding pad 101 through the wire bonding solder ball 110, so that the formation of the wire bonding wire 120 is facilitated and the connection reliability between the wire bonding wire 120 and the substrate 100 is improved, thereby improving the reliability of electromagnetic shielding and the quality and reliability of the semiconductor packaging structure 10.
[0061] [Example 2]
[0062] One of the differences between the second embodiment and the first embodiment is that:
[0063] In the first embodiment, the number of wire bonding pads is the same as the number of wire bonding balls, and the number of wire bonding wires is half the number of wire bonding balls and also half the number of wire bonding pads. That is, the number of wire bonding pads is n, the number of wire bonding balls is n, and the number of wire bonding wires is n / 2, wherein the two ends of the wire bonding wire are respectively arranged on different wire bonding balls, and n is a natural number greater than or equal to 2.
[0064] In the second embodiment, the number of wire bonding wires and the number of wire bonding balls are the same, and both are half of the number of wire bonding pads. That is, the number of wire bonding pads is n, the number of wire bonding balls is n / 2, and the number of wire bonding wires is n / 2, wherein one end of the wire bonding wire is disposed on the wire bonding ball and the other end is disposed on the wire bonding pad, and n is a natural number greater than or equal to 2.
[0065] The second difference between the second embodiment and the first embodiment is that:
[0066] In the first embodiment, the plane where the wire bonding wires are located is perpendicular to the plane where the substrate is located.
[0067] In the second embodiment, the plane where the wire bonding wires are located is tilted relative to the plane where the substrate is located.
[0068] For details, please refer to Figure 5 , which is a schematic diagram of the structure of the semiconductor packaging structure of the second embodiment of the present utility model. Figure 5As shown, the semiconductor packaging structure 20 includes: a substrate 200, wherein the substrate 200 has a plurality of wire bonding pads 201; at least one wire bonding solder ball 210, wherein the wire bonding solder ball 210 is arranged on the wire bonding pad 201; at least one wire bonding wire 220, wherein at least one end of the wire bonding wire 220 is arranged on the wire bonding solder ball 210; a plastic encapsulation layer 230, wherein the plastic encapsulation layer 230 covers the wire bonding wire 220 and the substrate 200 and exposes a portion of the surface of the wire bonding wire 220; and an electromagnetic shielding layer 240, wherein the electromagnetic shielding layer 240 covers the plastic encapsulation layer 230 and is connected to the wire bonding wire 220.
[0069] like Figure 5 As shown, eight wire bonding pads 201 are schematically shown in the figure, and accordingly, the number of the wire bonding balls 210 is four, and the number of the wire bonding wires 220 is also four. In this embodiment, the four wire bonding wires 220 are arranged in a row, and the plane where each of the wire bonding wires 220 is located is inclined relative to the plane where the substrate 200 is located.
[0070] Accordingly, this embodiment also provides a method for manufacturing a semiconductor packaging structure, which specifically includes:
[0071] Step S20: providing a substrate having a plurality of wire bonding pads;
[0072] Step S21: forming at least one wire bonding solder ball on the substrate, wherein the wire bonding solder ball is disposed on the wire bonding pad;
[0073] Step S22: forming at least one wire bonding wire on the substrate, wherein at least one end of the wire bonding wire is disposed on the wire bonding solder ball;
[0074] Step S23: forming a plastic encapsulation layer, wherein the plastic encapsulation layer covers the wire bonding wire and the substrate and exposes a portion of the surface of the wire bonding wire; and
[0075] Step S24: forming an electromagnetic shielding layer, wherein the electromagnetic shielding layer covers the plastic packaging layer and is connected to the wire bonding wire.
[0076] In this embodiment 2, step S23 further includes:
[0077] Step S230: Disposing a second mold on the substrate, wherein the second mold is connected to the wire bonding wire;
[0078] Step S231: using the second mold to inject a molding material to form a molding layer, wherein the molding layer covers the wire bonding wires and the substrate; and
[0079] Step S232: removing the second mold to expose a portion of the surface of the wire bonding wire.
[0080] In the second embodiment, a second mold can be used. The second mold is connected to the wire bonding wire 220, and the wire bonding wire 220 can be pressed down to a desired tilt angle; then, a plastic encapsulation material is poured to form a plastic encapsulation layer 230. In the second embodiment, the second mold is connected to the wire bonding wire 220, and the removal of the second mold can expose a portion of the surface of the wire bonding wire 220, and there is no need to perform grinding or laser ablation processes, thereby simplifying the process. Then, the electromagnetic shielding layer 240 can be connected to the exposed wire bonding wire 220.
[0081] For the parts not described in detail in the second embodiment, reference may be made to the first embodiment, and the second embodiment will not be described in detail.
[0082] [Example 3]
[0083] One of the differences between the third embodiment and the first embodiment is that:
[0084] In the first embodiment, the number of wire bonding pads is the same as the number of wire bonding balls, and the number of wire bonding wires is half the number of wire bonding balls and also half the number of wire bonding pads. That is, the number of wire bonding pads is n, the number of wire bonding balls is n, and the number of wire bonding wires is n / 2, wherein the two ends of the wire bonding wire are respectively arranged on different wire bonding balls, and n is a natural number greater than or equal to 2.
[0085] In the third embodiment, the number of wire bonding wires, the number of wire bonding balls, and the number of wire bonding pads are the same. That is, the number of the wire bonding pads is n, the number of the wire bonding balls is n, and the number of the wire bonding wires is n, wherein one end of the wire bonding wire is disposed on the wire bonding ball and the other end is a free end, and n is a natural number greater than or equal to 2.
[0086] The second difference between the third embodiment and the first embodiment is that:
[0087] In the first embodiment, the wire bonding wire is an arc line.
[0088] In the third embodiment, the wire bonding wire is a straight line.
[0089] For details, please refer to Figure 6 , which is a schematic diagram of the structure of the semiconductor packaging structure of the third embodiment of the present utility model. Figure 6As shown, the semiconductor packaging structure 30 includes: a substrate 300, wherein the substrate 300 has a plurality of wire bonding pads 301; at least one wire bonding solder ball 310, wherein the wire bonding solder ball 310 is arranged on the wire bonding pad 301; at least one wire bonding wire 320, wherein at least one end of the wire bonding wire 320 is arranged on the wire bonding solder ball 310; a plastic encapsulation layer 330, wherein the plastic encapsulation layer 330 covers the wire bonding wire 320 and the substrate 300 and exposes a portion of the surface of the wire bonding wire 320; and an electromagnetic shielding layer 340, wherein the electromagnetic shielding layer 340 covers the plastic encapsulation layer 330 and is connected to the wire bonding wire 320.
[0090] like Figure 6 As shown, eight wire bonding pads 301 are schematically shown in the figure, and accordingly, the number of the wire bonding balls 310 is eight, and the number of the wire bonding wires 320 is also eight. In this embodiment, one end of the wire bonding wire 320 is arranged on the wire bonding ball 310 and the other end is a free end. Further, the wire bonding wire 320 is a straight line, wherein the wire bonding wire 320 can be perpendicular to the plane where the substrate 300 is located, and can also be inclined relative to the plane where the substrate 300 is located. In this embodiment, the wire bonding wire 320 is perpendicular to the plane where the substrate 300 is located.
[0091] The semiconductor package structure 30 may be manufactured using a first mold or a second mold, and details may refer to the first and second embodiments described above.
[0092] For the parts not described in detail in the third embodiment, reference may be made to the first and second embodiments described above, and the third embodiment will not be described in detail.
[0093] In the present application, references to "one embodiment" or "some embodiments" mean that features, structures, or characteristics described in conjunction with the embodiment are included in at least one embodiment, at least some embodiments, of the present application. Therefore, the appearance of the phrases "in one embodiment" or "in some embodiments" in various places of the present application does not necessarily refer to the same or the same embodiments. In addition, in one or more embodiments, features, structures, or characteristics may be combined in any suitable combination and / or sub-combination.
[0094] Although some specific embodiments of the present application have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the present application. The various embodiments of the present application may be combined in any manner without departing from the spirit and scope of the present application. It will also be appreciated by those skilled in the art that various modifications may be made to the embodiments without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.
Claims
1. A semiconductor packaging structure, characterized in that: The semiconductor packaging structure comprises: A substrate having a plurality of wire bonding pads; at least one wire bonding solder ball, wherein the wire bonding solder ball is disposed on the wire bonding pad, and the height of the wire bonding solder ball is between 10 μm and 50 μm; at least one wire bonding wire, at least one end of the wire bonding wire being disposed on the wire bonding solder ball; a plastic encapsulation layer, the plastic encapsulation layer covering the wire bonding wire and the substrate and exposing a portion of the surface of the wire bonding wire; and An electromagnetic shielding layer covers the plastic packaging layer and is connected to the lead bonding wire.
2. The semiconductor package structure according to claim 1, wherein: The number of the wire bonding pads is n, the number of the wire bonding balls is n / 2, and the number of the wire bonding wires is n / 2, wherein one end of the wire bonding wire is arranged on the wire bonding ball and the other end is arranged on the wire bonding pad, and n is a natural number greater than or equal to 2.
3. The semiconductor package structure according to claim 1, wherein: The number of the wire bonding pads is n, the number of the wire bonding balls is n, and the number of the wire bonding wires is n / 2, wherein two ends of the wire bonding wires are respectively arranged on different wire bonding balls, and n is a natural number greater than or equal to 2.
4. The semiconductor package structure according to claim 2 or 3, characterized in that: The wire bonding line is an arc line.
5. The semiconductor package structure according to claim 4, wherein: The plane where the wire bonding wires are located is perpendicular to the plane where the substrate is located or is inclined relative to the plane where the substrate is located.
6. The semiconductor package structure according to claim 1, wherein: The number of the wire bonding pads is n, the number of the wire bonding balls is n, and the number of the wire bonding wires is n, wherein one end of the wire bonding wire is arranged on the wire bonding ball and the other end is a free end, and n is a natural number greater than or equal to 2.
7. The semiconductor package structure according to any one of claims 1 to 3 and 6, characterized in that: The height of the wire bonding wire is between 200 μm and 600 μm.
8. The semiconductor package structure according to any one of claims 1 to 3 and 6, characterized in that: The electromagnetic shielding layer covers the top surface and side surfaces of the plastic packaging layer and also extends to cover the side surfaces of the substrate.
9. The semiconductor package structure according to any one of claims 1 to 3 and 6, characterized in that: A plurality of chips and / or devices are formed on the substrate, and at least one wire bonding wire is arranged between at least two of the chips and / or devices.
10. The semiconductor package structure according to any one of claims 1 to 3 and 6, characterized in that: The wire bonding solder balls are metal wire bonding solder balls, and the wire bonding wires are metal wire bonding wires.