Solar cell and photovoltaic module
By providing an overlapping pyramid structure on the surface of the silicon substrate of the solar cell with inward concave pyramid structure, the problem of insufficient effective utilization of light in the prior art is solved, and a higher solar light absorption rate and a lower reflectivity are achieved, thereby improving the battery performance.
Patent Information
- Application Number
- CN202421313173.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-07
- Publication Date
- 2025-03-14
- Estimated Expiration
- 2034-06-07
AI Technical Summary
Existing solar cells have shortcomings in the effective utilization of light, which has led to insufficient improvement in battery performance. The main problem is how to improve the effective absorption of light by the light absorbing layer and reduce the reflection of light on the surface of the battery.
An overlapping pyramid structure is provided on the surface of the silicon substrate, and the spiral of the pyramid structure is concave inward. This structural design improves the effective absorption rate of the battery to the sunlight and reduces the reflectance of the light on the battery surface.
By setting up a pyramid structure, the light path of sunlight in the cell is extended, the reflection of light is reduced, and the effective absorption rate of the battery to sunlight is improved, thereby improving the battery's performance.
Smart Images
Figure CN222621531U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of solar cells, and in particular to a solar cell and a photovoltaic module. Background Art
[0002] A solar cell is a device that directly converts light energy into electrical energy through the photoelectric effect or the photochemical effect. The light-absorbing material of the solar cell absorbs sunlight to form hole-electron pairs. The hole-electron pairs separate, and the photogenerated holes and photogenerated electrons flow to different locations, generating electric current.
[0003] Existing solar cells include silicon-based cells with silicon materials as light-absorbing layers, perovskite cells with compound films as light-absorbing layers, and stacked solar cells. For solar cells, the effective use of light is one of the important means to improve cell performance. How to improve the effective absorption of light by the light-absorbing layer and reduce the reflection of light on the cell surface are issues that need to be urgently addressed to improve cell performance. Utility Model Content
[0004] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a solar cell and a photovoltaic module, which can increase the effective absorption rate of the solar cell to the sunlight, reduce the reflectivity of the light on the surface of the cell, and help improve the performance of the cell.
[0005] In a first aspect, the present application provides a solar cell, comprising:
[0006] A silicon substrate, the silicon substrate having a first surface and a second surface arranged opposite to each other, at least one of the first surface and the second surface having a velvet surface including a plurality of pyramid structures, the pyramid structures including a top and a bottom, the bottom being located on one of the first surface and the second surface, the top extending toward the other of the first surface and the second surface; wherein the bottoms of adjacent pyramid structures partially overlap.
[0007] According to the solar cell of the present application, overlapping pyramid structures are arranged on the surface of the silicon substrate, and the tops of the pyramid structures are concave inwards, which can increase the effective absorption rate of the battery to sunlight, reduce the reflectivity of the light on the battery surface, and help improve the battery performance.
[0008] According to an embodiment of the present application, the intersecting edges between the tower bases of adjacent pyramid structures are overlapping edges; in the tower bases, the ratio of the length of the overlapping edges to the bottom width of the tower base is 0.1-0.5.
[0009] According to one embodiment of the present application, the pyramid structure has a tower height of 0.3 μm-5 μm.
[0010] According to one embodiment of the present application, the base width of the pyramid structure is 0.3 μm-5 μm.
[0011] According to one embodiment of the present application, the multiple pyramid structures are arranged periodically.
[0012] According to one embodiment of the present application, it also includes:
[0013] A perovskite battery cell, wherein the perovskite battery cell is disposed on the first surface or the second surface of the silicon substrate.
[0014] According to one embodiment of the present application, the perovskite battery cell includes a first carrier transport layer, a perovskite absorption layer and a second carrier transport layer arranged in sequence, the first carrier transport layer is located between the silicon substrate and the perovskite absorption layer, and the first carrier transport layer has a velvet surface including the multiple pyramid structures.
[0015] According to one embodiment of the present application, the perovskite absorption layer has a textured surface including the multiple pyramid structures.
[0016] According to an embodiment of the present application, a transparent conductive medium layer is provided on at least one of the first surface and the second surface of the silicon substrate, and the transparent conductive medium layer has a velvet surface including the multiple pyramid structures.
[0017] In a second aspect, the present application provides a photovoltaic assembly, the photovoltaic assembly comprising:
[0018] At least one solar cell as described in the first aspect above.
[0019] According to the photovoltaic module of the present application, overlapping pyramid structures are arranged on the surface of the silicon substrate, and the top of the pyramid structure is concave inward, which can increase the effective absorption rate of the battery to sunlight, reduce the reflectivity of the light on the battery surface, and help improve the battery performance.
[0020] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0022] Figure 1 This is one of the schematic diagrams of the velvet structure of the silicon substrate of the solar cell provided in the embodiment of the present application;
[0023] Figure 2This is the second schematic diagram of the velvet structure of the silicon substrate of the solar cell provided in the embodiment of the present application;
[0024] Figure 3 It is a schematic diagram of the structure of a solar cell provided in an embodiment of the present application.
[0025] Reference numerals:
[0026] Silicon substrate 100, first surface 110, second surface 120, pyramid structure 130, pyramid bottom 131, pyramid top 132,
[0027] A first carrier transport layer 210 , a perovskite absorption layer 220 , a second carrier transport layer 230 , a first transparent conductive medium layer 310 , a second transparent conductive medium layer 320 , a third transparent conductive medium layer 330 , and an electrode structure 400 . DETAILED DESCRIPTION
[0028] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.
[0029] Reference below Figure 1-Figure 3 Description The solar cell according to the embodiment of the present application can improve the effective absorption rate of the cell to sunlight, reduce the reflectivity of light on the cell surface, and help improve the performance of the cell.
[0030] The solar cell provided in the embodiment of the present application includes a silicon substrate 100 .
[0031] The silicon substrate 100 has a first surface 110 and a second surface 120 that are oppositely disposed. Of the first surface 110 and the second surface 120 , one surface is a light-receiving surface, and the other surface is a backlight surface.
[0032] In this embodiment, at least one of the first surface 110 and the second surface 120 has a textured surface including a plurality of pyramid structures 130 .
[0033] like Figure 1 As shown, the pyramid structure 130 includes a top 132 and a bottom 131 , wherein the bottom 131 is located on one of the first surface 110 and the second surface 120 , and the top 132 extends toward the other of the first surface 110 and the second surface 120 .
[0034] For example, the first surface 110 has a velvet surface including a plurality of pyramid structures 130 , wherein the bases 131 of the pyramid structures 130 are located on the first surface 110 , and the tops 132 of the pyramid structures 130 extend toward the second surface 120 .
[0035] For another example, the second surface 120 has a velvet surface including a plurality of pyramid structures 130 , wherein the bases 131 of the pyramid structures 130 are located on the second surface 120 , and the tops 132 of the pyramid structures 130 extend toward the first surface 110 .
[0036] It can be understood that the base 131 of the pyramid structure 130 is located on a surface of the silicon substrate 100, and the top 132 extends toward a surface opposite to the surface, that is, the pyramid structure 130 on the surface of the silicon substrate 100 is an inverted pyramid concave inward, and sunlight is incident on the inner wall of the pyramid structure 130.
[0037] In this embodiment, the bases 131 of adjacent pyramid structures 130 partially overlap.
[0038] It should be noted that the tower bases 131 of adjacent pyramid structures 130 have intersecting edges, and the projections of the tower bases 131 of adjacent pyramid structures 130 on the silicon substrate 100 have overlapping parts, and do not completely overlap.
[0039] For example, Figure 1 As shown, the bases 131 of two adjacent pyramid structures 130 partially overlap, the right side and the lower side of the base 131 of the pyramid structure 130 located on the left intersect with the left side and the upper side of the base 131 of the pyramid structure 130 located on the right, and the projections of the bases 131 of the pyramid structures 130 on the silicon substrate 100 have overlapping parts and do not completely overlap.
[0040] In the embodiment of the present application, overlapping and inwardly concave pyramid structures 130 are provided on the silicon substrate 100. After the sunlight is incident on the inner wall of the pyramid structure 130, reflected light is generated. The reflected light can be reflected into the pyramid structure 130 adjacent to the pyramid structure 130 and partially overlapping the bottom 131 of the pyramid structure 130, thereby extending the light path of the sunlight in the solar cell and reducing the sunlight reflected out of the solar cell, so that more photons can be used for carrier generation, thereby improving the battery performance.
[0041] According to the solar cell provided in the embodiment of the present application, overlapping pyramid structures 130 are arranged on the surface of the silicon substrate 100, and the top of the pyramid structure 130 is concave inward, which can improve the effective absorption rate of the battery to sunlight, reduce the reflectivity of the light on the surface of the battery, and help improve the performance of the battery.
[0042] In some embodiments, the intersecting edges between the tower bases 131 of adjacent pyramid structures 130 are overlapping edges; in the tower bases 131 , the ratio of the length of the overlapping edge to the base width of the tower base 131 is 0.1-0.5.
[0043] The bottom width of the tower bottom 131 refers to the side length of the sides of the tower bottom 131 of the pyramid structure 130 that do not intersect with the tower bottoms 131 of other pyramid structures 130 , that is, the side length of the complete tower bottom 131 .
[0044] For example, Figure 2 As shown, the tower bases 131 of two adjacent pyramid structures 130 partially overlap, and the right side and lower side of the tower base 131 of the left pyramid structure 130 intersect with the left side and upper side of the tower base 131 of the right pyramid structure 130.
[0045] The right side and the lower side of the tower base 131 of the left pyramid structure 130 , and the left side and the upper side of the tower base 131 of the right pyramid structure 130 , are referred to as overlapping sides.
[0046] The length of the left side and the upper side of the tower bottom 131 of the left pyramid structure 130 and the length of the right side and the lower side of the tower bottom 131 of the right pyramid structure 130 are the bottom width of the tower bottom 131 .
[0047] In this embodiment, the length of the left side of the tower bottom 131 of the left pyramid structure 130 is Δy, the bottom width of the tower bottom 131 of the left pyramid structure 130 is w, and Δy / w=0.1-0.5.
[0048] The length of the upper side of the tower bottom 131 of the right pyramid structure 130 is Δx, the bottom width of the tower bottom 131 of the right pyramid structure 130 is w, and Δx / w=0.1-0.5.
[0049] It should be noted that by setting the ratio of the length of the overlapping sides in the same tower bottom 131 to the bottom width of the tower bottom 131 to 0.1-0.5, the sunlight incident on the inner wall of the pyramid structure 130 can be reflected by the inner wall and reflected into the pyramid structure 130 adjacent to the pyramid structure 130 and partially overlapping the tower bottom 131, and continuously reflected between adjacent pyramid structures 130, thereby extending the light path and improving the effective absorption rate of sunlight.
[0050] In some embodiments, the pyramid structure 130 has a tower height of 0.3 μm-5 μm.
[0051] It can be understood that the height of the pyramid structure 130 refers to the distance from the plane where the base 131 of the pyramid structure 130 is located to the top 132 .
[0052] In this embodiment, the height of the pyramid structure 130 is set to 0.3 μm-5 μm, which can extend the path of light in the pyramid structure 130 and improve light utilization.
[0053] In some embodiments, the base width of the pyramid structure 130 is 0.3 μm-5 μm.
[0054] The bottom width refers to the length of the side of the bottom 131 of the pyramid structure 130 that does not intersect with the bottom 131 of other pyramid structures 130 . For multiple pyramid structures 130 , the bottom width can also be called the period of the pyramid structure 130 .
[0055] like Figure 2 As shown, the upper side of the left pyramid structure 130 is a complete side, the bottom width of the left pyramid structure 130 is w, and the right side of the right pyramid structure 130 is a complete side, and the bottom width of the right pyramid structure 130 is w.
[0056] In this embodiment, w=0.3 μm-5 μm.
[0057] In actual implementation, the ratio of the length of the overlapping sides to the bottom width in the tower bottom 131 may be 0.1-0.5, Δx / w=0.1-0.5, Δy / w=0.1-0.5, and Δx and Δy may be 0.03 μm-2.5 μm.
[0058] In some embodiments, a plurality of pyramid structures 130 are arranged periodically.
[0059] In actual implementation, the plurality of pyramid structures 130 on the silicon substrate 100 may be arranged according to a preset row period and / or column period.
[0060] For example, the surface of the silicon substrate 100 has n pyramid structures 130, which are arranged in m rows and k columns. The tower bases 131 of adjacent pyramid structures 130 partially overlap, and the ratio of the length of the overlapping side to the bottom width in the tower base 131 is set to 0.3.
[0061] It should be noted that the solar cell of the embodiment of the present application may be a silicon-based cell with a silicon material as a light-absorbing layer, or may be a stacked cell including a perovskite cell unit with a compound film as a light-absorbing layer.
[0062] In actual implementation, the solar cell can be a silicon-based cell such as a Passivated EmitterRear Cell (PERC), a Tunnel Oxide Passivated Contact solar cell (TOPCon), a heterojunction cell (HJT), etc. The silicon substrate 100 serves as a light-absorbing layer of the silicon-based cell, and the partially overlapping and concave pyramid structure 130 on the silicon substrate 100 can effectively improve the photocurrent of the silicon-based cell.
[0063] The solar cell may be a stacked cell, in which the silicon substrate 100 serves as a light-absorbing layer of a cell unit in the stacked cell. The stacked cell may also include a perovskite cell unit and the like.
[0064] In some embodiments, the solar cell may further include a perovskite cell unit, and the perovskite cell unit is disposed on the first surface 110 or the second surface 120 of the silicon substrate 100 .
[0065] The light-absorbing layer material of the perovskite battery cell is an organic-inorganic metal halide perovskite material, which has excellent photoelectric performance and low cost. The band gap of the perovskite material is adjustable and easy to prepare. It can be stacked with other battery cells to form a stacked battery with high photoelectric conversion efficiency.
[0066] In this embodiment, a velvet surface having a plurality of pyramid structures 130 is provided on the first surface 110 or the second surface 120 of the silicon substrate 100, and the perovskite battery cell is provided on the first surface 110 or the second surface 120 of the silicon substrate 100. The velvet surface having a plurality of pyramid structures 130 can effectively increase the reflection of sunlight, increase the transmission distance of sunlight in the silicon substrate 100 and the perovskite battery cell, and reduce the light escaping from the battery.
[0067] In some embodiments, the perovskite battery cell includes a first carrier transport layer 210 , a perovskite absorption layer 220 , and a second carrier transport layer 230 arranged in sequence, and the first carrier transport layer 210 is located between the silicon substrate 100 and the perovskite absorption layer 220 .
[0068] The perovskite absorption layer 220 is used to absorb light to generate electron-hole pairs, and the first carrier transport layer 210 and the second carrier transport layer 230 transport different carriers respectively.
[0069] For example, the first carrier transport layer 210 transports electrons, and the second carrier transport layer 230 transports holes; the first carrier transport layer 210 transports holes, and the second carrier transport layer 230 transports electrons.
[0070] like Figure 3 As shown, a first carrier transport layer 210, a perovskite absorption layer 220 and a second carrier transport layer 230 are sequentially stacked on the first surface 110 of the silicon substrate 100, and the first carrier transport layer 210 is located between the silicon substrate 100 and the perovskite absorption layer 220, and the first carrier transport layer 210 has a velvet surface including a plurality of pyramid structures 130.
[0071] It should be noted that the first carrier transport layer 210 is covered on the silicon substrate 100, and the first carrier transport layer 210 can form a velvet surface consistent with the morphological characteristics of the velvet surface on the silicon substrate 100. The first carrier transport layer 210 has a plurality of inwardly concave inverted pyramids, and the bases 131 of adjacent pyramid structures 130 partially overlap.
[0072] In some embodiments, the perovskite absorber layer 220 has a textured surface including a plurality of pyramid structures 130 .
[0073] The perovskite material layer is generally a three-dimensional structure ABX3, where A is a monovalent cation, including but not limited to one or a mixture of monovalent cations of cesium (Cs), rubidium (Rb), methylamine (CH3NH3), and guanidine (CH2(NH2)2); B is a divalent cation, including but not limited to one or a mixture of divalent cations of lead (Pb), copper (Cu), zinc (Zn), gallium (Ga), tin (Sn), and calcium (Ca); X is a monovalent anion, including but not limited to one or a mixture of monovalent anions of iodine (I), bromine (Br), chlorine (Cl), fluorine (F), and thiocyanate ion (SCN).
[0074] In actual implementation, the thickness of the perovskite absorption layer 220 of the perovskite battery cell may be 10 nm-100 μm, and its band gap may be 0.9 eV-3.0 eV.
[0075] The preparation process of the perovskite absorption layer 220 includes, but is not limited to, one or more of spin coating, blade coating, evaporation, printing, spray coating, spray pyrolysis, and slit coating.
[0076] Among them, the solution coating of the perovskite absorption layer 220 can be divided into a one-step method and a two-step method. The one-step method is to dissolve the metal halide and the organic amine salt in a certain solvent to form a perovskite precursor solution, and then coat it to prepare the perovskite absorption layer 220; the two-step method is to first coat the metal halide film, and then immerse it in an organic amine salt solution to react or coat the organic amine salt solution to achieve the insertion of the organic amine salt to form perovskite crystals.
[0077] In this embodiment, when the perovskite absorption layer 220 is prepared by a two-step method, the perovskite absorption layer 220 can form a velvet surface consistent with the morphological characteristics of the velvet surface on the surface of the silicon substrate 100. The perovskite absorption layer 220 has a plurality of inwardly concave inverted pyramids, and the bases 131 of adjacent pyramid structures 130 partially overlap.
[0078] In some embodiments, a transparent conductive medium layer is disposed on at least one of the first surface 110 and the second surface 120 of the silicon substrate 100 , and the transparent conductive medium layer has a textured surface including a plurality of pyramid structures 130 .
[0079] The transparent conductive medium layer may be a transparent conductive oxide coating (TCO), whose transparent property will not block sunlight, and whose conductive property can transmit electrons or holes generated by the silicon substrate 100 or the functional layer on the silicon substrate 100, and then be collected by the electrode structure 400 of the solar cell.
[0080] In actual implementation, TCO includes but is not limited to transparent conductive films such as ITO, IZO, IWO, FTO, ICO, AZO, and BZO.
[0081] For example, Figure 3 As shown, the solar cell is a stacked cell. The first surface 110 and the second surface 120 of the silicon substrate 100 are respectively provided with a first transparent conductive medium layer 310 and a second transparent conductive medium layer 320. The silicon substrate 100 is a component of the bottom cell of the stacked cell.
[0082] A first carrier transport layer 210 , a perovskite absorption layer 220 , a second carrier transport layer 230 , a third transparent conductive medium layer 330 and an electrode structure 400 are sequentially stacked on the first transparent conductive medium layer 310 , and an electrode structure 400 is also disposed under the second transparent conductive medium layer 320 .
[0083] In this embodiment, the transparent conductive medium layer disposed on the surface of the silicon substrate 100 can form a velvet surface with the same morphological characteristics as the velvet surface of the silicon substrate 100. The transparent conductive medium layer has a plurality of inwardly concave inverted pyramids, and the bases 131 of adjacent pyramid structures 130 partially overlap.
[0084] In actual implementation, the bottom cell of the stacked cell may further include a plurality of n-type layers for transporting electrons and a plurality of p-type layers for transporting holes.
[0085] Among them, the n-type layer material includes but is not limited to one or more of n-type single crystal silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, GZO, IZO, FTO, ITO, BaSnO3, TiSnOx, SnZnOx, fullerene and derivatives (C60, C70, PCBM), and the thickness of the n-type layer can be 10nm-100μm.
[0086] The p-type layer materials include but are not limited to p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, and single-molecule self-assembled materials. The single-molecule self-assembled materials include [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), benzoic acid, 4-[bis(2,4-dimethoxybiphenyl-4-yl)amino]-biphenyl-4-carboxylic acid [MC- 43], etc., one or more of Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene), PTAA (polyethylene terephthalate), P3HT (polymer of 3-hexylthiophene), PEDOT:PSS, Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, NiOx, CuSCN, CuAlO2, V2O5, CdS, CdSe, the thickness of the p-type layer can be 10nm-100μm.
[0087] In some embodiments, the material of the electrode structure 400 includes but is not limited to one or more of Au, Ag, Al, Cu, graphene, TCO materials, and nanocrystalline silicon. The electrode preparation method includes but is not limited to one or more of spin coating, scraping, evaporation, printing, spraying, spray pyrolysis, and slit coating. The thickness of the electrode structure 400 can be 10nm-100μm.
[0088] It can be understood that the velvet formed on the transparent conductive medium layer, the carrier transport layer and the perovskite absorption layer 220 is transferred from the silicon substrate 100, and the morphological characteristics of the velvet are also related to the coating process. The velvet of multiple pyramid structures 130 on the silicon substrate 100 can be obtained by a velvet making process.
[0089] The solar cell of the embodiment of the present application has a partially overlapping and inwardly concave pyramid structure 130. The reflected light generated by sunlight incident on the inner wall of the pyramid structure 130 can be reflected into the pyramid structure 130 adjacent to the pyramid structure 130 and partially overlapping the bottom 131 of the pyramid structure 130, thereby extending the light path of the sunlight, reducing the sunlight escaping from the battery, and improving the battery's effective absorption rate of sunlight.
[0090] A specific example of preparing a solar cell is introduced below.
[0091] An N-type silicon wafer is used as the silicon substrate 100, and the N-type silicon wafer is polished and textured. The surface of the N-type silicon wafer has a textured surface including multiple pyramid structures 130. The pyramid structures 130 are inverted pyramids that are concave inward. The bases 131 of adjacent pyramid structures 130 partially overlap, and the height of the pyramid structures 130 is 0.3 μm.
[0092] Plasma enhanced chemical vapor deposition (PECVD) is used to prepare the front intrinsic amorphous silicon and n-type amorphous silicon, and the back intrinsic amorphous silicon and p-type amorphous silicon.
[0093] A layer of transparent conductive medium ITO is prepared on the light-receiving front side and the back side facing away from the light, and a first carrier transport layer 210, a perovskite absorption layer 220 and a second carrier transport layer 230 are deposited on the front side, and then a transparent conductive medium layer is deposited, and finally an electrode structure 400 is prepared to complete the preparation of the solar cell.
[0094] The embodiment of the present application also provides a photovoltaic module.
[0095] The solar cell of the embodiment of the present application includes at least one solar cell as described above.
[0096] The solar cell may be a silicon-based cell using a silicon material as a light-absorbing layer, or may be a stacked cell including a perovskite cell unit using a compound film as a light-absorbing layer.
[0097] According to the photovoltaic module provided in the embodiment of the present application, by setting overlapping pyramid structures 130 on the surface of the silicon substrate 100, the top of the pyramid structure 130 is concave inward, which can increase the effective absorption rate of the battery to sunlight, reduce the reflectivity of the light on the surface of the battery, and help improve the performance of the battery.
[0098] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.
[0099] In the description of the present application, it should be understood that the terms "length", "width", "thickness", "up", "down", "left", "right", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
[0100] In the description of this application, "first feature" or "second feature" may include one or more of the features.
[0101] In the description of the present application, “plurality” means two or more.
[0102] In the description of the present application, a first feature being “on” or “under” a second feature may include that the first and second features are directly in contact with each other, or may include that the first and second features are not in direct contact with each other but are in contact with each other via another feature therebetween.
[0103] In the description of the present application, “above”, “over” and “above” a first feature to a second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature.
[0104] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.
[0105] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.
Claims
1. A solar cell, characterized in that: include: A silicon substrate, the silicon substrate having a first surface and a second surface arranged opposite to each other, at least one of the first surface and the second surface having a velvet surface including a plurality of pyramid structures, the pyramid structures including a tower top and a tower bottom, the tower bottom being located on one of the first surface and the second surface, and the tower top extending toward the other of the first surface and the second surface; wherein the tower bottoms of adjacent pyramid structures partially overlap.
2. The solar cell according to claim 1, characterized in that The intersecting edges between the tower bases of adjacent pyramid structures are overlapping edges; in the tower bases, the ratio of the length of the overlapping edges to the bottom width of the tower base is 0.1-0.
5.
3. The solar cell according to claim 1, characterized in that The tower height of the pyramid structure is 0.3 μm-5 μm.
4. The solar cell according to claim 1, characterized in that The base width of the pyramid structure is 0.3 μm-5 μm.
5. The solar cell according to claim 1, characterized in that: The multiple pyramid structures are arranged periodically.
6. The solar cell according to any one of claims 1 to 5, characterized in that: Also includes: A perovskite battery cell, wherein the perovskite battery cell is disposed on the first surface or the second surface of the silicon substrate.
7. The solar cell according to claim 6, characterized in that: The perovskite battery cell includes a first carrier transport layer, a perovskite absorption layer and a second carrier transport layer which are arranged in sequence, wherein the first carrier transport layer is located between the silicon substrate and the perovskite absorption layer, and the first carrier transport layer has a velvet surface including the multiple pyramid structures.
8. The solar cell according to claim 7, characterized in that: The perovskite absorption layer has a textured surface including the plurality of pyramid structures.
9. The solar cell according to any one of claims 1 to 5, characterized in that: A transparent conductive medium layer is disposed on at least one of the first surface and the second surface of the silicon substrate, and the transparent conductive medium layer has a velvet surface including the plurality of pyramid structures.
10. A photovoltaic module, characterized in that: include: At least one solar cell according to any one of claims 1 to 9.