Lower ring type externally-wrapped guide cylinder for producing single crystal by Czochralski method

Abstract

The utility model discloses a lower ring type externally-wrapped guide cylinder for producing single crystals by a Czochralski method, which particularly relates to the field of producing single crystals by the Czochralski method and comprises a guide cylinder main body, a first mounting hole is formed in the bottom of the guide cylinder main body, a guide cylinder lower ring is arranged at the bottom of the guide cylinder main body, and a second mounting hole is formed in the guide cylinder lower ring. And the outer ring of the guide cylinder lower ring is fixedly connected with a limiting clamping ring. According to the utility model, the guide cylinder lower ring can be replaced for secondary use when the bottom wall body of the inner cavity of the guide cylinder main body is damaged, so that the part of the guide cylinder main body can be reused, the design is ingenious, and the replacement cost of a single piece is low; the flow guide cylinder is simple in structure and convenient to operate, avoids the situation of crystal growth bud falling caused by inaccurate growth capture of the splash silicon reflective crystal, prolongs the service life of the flow guide cylinder main body, can enable the bottom of the flow guide cylinder to be closer to a silicon solution through the flat bottom of the flow guide cylinder, accelerates the flowing speed of gas above the liquid, increases the oxygen volatilization rate of the gas, and improves the quality of single crystals.

Description

Technical Field

[0001] The utility model relates to the technical field of producing single crystals by the Czochralski method, and more specifically to a lower ring-type outer-wrapped guide tube for producing single crystals by the Czochralski method. Background Art

[0002] Silicon single crystals are the main raw materials for manufacturing integrated circuits and solar cells. The growth of silicon single crystals mainly uses a direct-pull silicon single crystal growth furnace. The silicon polycrystalline raw materials are placed in a crucible, melted by a heater, and then the ideal silicon single crystal is grown by guiding the seed crystal and pulling it upward. During the continuous upward pulling silicon single crystal growth process, process gas (high-purity argon) is filled from the top of the silicon single crystal growth furnace. In order to ensure the stable and rapid growth of silicon single crystals and the timely removal of volatiles, a guide tube is installed on the crucible;

[0003] The existing guide tube has a bowl-shaped structure with a side wall and an arc segment connected to the bottom of the side wall, so there is a large gap above the liquid surface and a low gas flow rate. When pulling a large-sized single crystal, the volatile area of ​​the liquid surface is reduced, resulting in a high oxygen content.

[0004] The Chinese patent with patent application number CN201910941999.2 discloses a flat-bottomed guide tube for a CZ silicon single crystal furnace, including a guide tube side wall portion, a guide tube transition portion and a guide tube flat bottom portion, wherein the guide tube side wall portion, the guide tube transition portion and the guide tube flat bottom portion are connected in sequence, wherein the guide tube side wall portion, the guide tube transition portion and the guide tube flat bottom portion are all annular structures, the diameter of the guide tube flat bottom portion is smaller than the diameter of the guide tube side wall portion, and the guide tube flat bottom portion and the guide tube side wall portion are coaxially arranged to reduce the gap between the silicon solution surface and the guide tube. The guide tube has a guide tube flat bottom portion, the gap between the guide tube and the liquid surface is reduced, the gas flow rate is accelerated, and the volatilized oxygen can be quickly taken away, which can effectively reduce the oxygen content of large-sized single crystals and improve the quality of large-sized single crystals;

[0005] Then, combined with the drawings in the manual, it can be seen that the guide tube is an integrated structure. When the local structure is damaged, it can only be replaced as a whole, which is costly. The outer guide lower edge captures the reflective crystal growth of the sputtered silicon inaccurately, causing the crystal to grow and fall off, affecting the efficiency and effect of crystal production. Utility Model Content

[0006] In order to overcome the above-mentioned defects of the prior art, the utility model provides a lower ring-type outer-wrapped guide tube for producing single crystals by the Czochralski method, so as to solve the problems raised in the above-mentioned background technology.

[0007] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a lower ring type outer package guide tube for producing single crystal by Czochralski method, comprising a guide tube body, a first mounting hole is opened at the bottom of the guide tube body, a guide tube lower ring is arranged at the bottom of the guide tube body, a limit clamp ring is fixedly connected to the outer ring of the guide tube lower ring, a guide tube flat bottom is fixedly connected to the inner ring of the guide tube body, and a connecting ring is fixedly connected to the top outer ring of the guide tube body;

[0008] A positioning hole is provided on the surface of the connecting ring, three clamping plates are fixedly connected to the top of the connecting ring, a connecting groove is provided at the bottom of one side of the clamping plate, a sealing ring is provided on the top of the connecting ring, three second mounting holes are provided on the surface of the sealing ring, and a positioning column is fixedly connected to the bottom of the sealing ring.

[0009] Preferably, the diameter of the first mounting hole is the same as the diameter of the lower ring of the guide tube, and the lower ring of the guide tube is located in the middle of the first mounting hole.

[0010] Preferably, the limiting clamp ring is arranged at the bottom of the inner cavity of the guide tube body, and the wall of the limiting clamp ring is in contact with the wall of the bottom of the inner cavity of the guide tube body.

[0011] Preferably, there are a plurality of positioning holes, the second mounting holes and the positioning columns are staggered, and three of the second mounting holes are located at one end of the bottom of the card plate.

[0012] Preferably, the diameter of the positioning column is the same as the diameter of the positioning hole, and the positioning column is inserted into the corresponding positioning hole.

[0013] Preferably, the diameter of the second mounting hole is the same as the diameter of the positioning hole, and the second mounting hole corresponds to the corresponding positioning hole.

[0014] Preferably, the cross-sectional shape of the clamping plate is set to be "L"-shaped, and the three clamping plates are evenly distributed on the top of the connecting ring, and one end of the top wall of the inner cavity of the connecting groove is lower than the other end.

[0015] Technical effects and advantages of the utility model:

[0016] 1. The utility model firstly provides a lower ring of the guide tube, which can be replaced for secondary use when the bottom wall of the inner cavity of the guide tube body is damaged, so that part of the guide tube body can be reused. The design is ingenious, and the cost of replacing a single piece is low, which avoids the situation that the growth of the crystal is not accurately captured due to the splashing silicon reflective crystal growth, resulting in the crystal growth bud falling off, and the service life of the guide tube body is extended. The flat bottom of the guide tube can make the bottom of the guide tube closer to the silicon solution, accelerate the gas flow speed above the liquid, increase the rate of gas volatile oxygen, and improve the quality of the single crystal;

[0017] 2. The utility model can also improve the installation and fastening strength of the guide tube body by setting the sealing ring, and can improve the tightness of the sealing ring installation by inserting the positioning column into the second mounting hole, and can achieve fastening connection by rotating the clamping plate and the connecting groove and connecting with the matching clamping piece, which is convenient for installation and connection and improves the stability of the connection. By inserting a screw into the positioning hole and passing through the second mounting hole to squeeze the clamping piece connected to the connecting groove, the stability of the connection between the clamping plate and the matching clamping piece is improved;

[0018] In summary, through the mutual influence of the above-mentioned multiple effects, when the bottom wall of the inner cavity of the guide tube main body is damaged, the guide tube lower ring can be replaced for a second use, so that part of the guide tube main body can be reused. The design is ingenious and the cost of replacing a single piece is low. It avoids the situation where the inaccurate capture of the growth of the sputtered silicon reflective crystal causes the crystal growth to fall off, and the service life of the guide tube main body is extended. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a schematic diagram of the overall structure of the utility model.

[0020] Figure 2 It is a schematic diagram of the disassembled structure of the guide tube body and the sealing ring of the utility model.

[0021] Figure 3 It is a schematic diagram of the split structure of the guide tube main body and the guide tube lower ring of the utility model.

[0022] Figure 4 It is a schematic diagram of the cross-sectional structure of the utility model.

[0023] Figure 5 It is a schematic diagram of the split cross-section structure of the utility model.

[0024] The figures are marked as follows: 1. guide tube body; 2. guide tube lower ring; 3. limit clamp ring; 4. guide tube flat bottom; 5. first mounting hole; 6. connecting ring; 7. positioning hole; 8. clamping plate; 9. connecting groove; 10. sealing ring; 11. second mounting hole; 12. positioning column. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0026] As attached Figure 1-5The shown lower ring type outer guide tube for producing single crystal by the direct pulling method comprises a guide tube body 1, a first mounting hole 5 is opened at the bottom of the guide tube body 1, which is convenient for installing and limiting the guide tube lower ring 2, and a guide tube lower ring 2 is arranged at the bottom of the guide tube body 1. When the bottom wall of the inner cavity of the guide tube body 1 is damaged due to corrosion, the guide tube lower ring 2 can be replaced for secondary use, so that part of the guide tube body 1 can be reused. The design is ingenious, the replacement cost of a single piece is low, and the service life of the guide tube body 1 is extended. The outer ring of the guide tube lower ring 2 is fixedly connected to a limiting clamp ring 3, which is convenient for limiting the installation of the guide tube lower ring 2. The inner ring of the guide tube body 1 is fixedly connected to a guide tube flat bottom 4, which can make the bottom of the guide tube closer to the silicon solution, accelerate the gas flow speed above the liquid, increase the rate of volatile oxygen of the gas, and improve the quality of the single crystal. The top outer ring of the guide tube body 1 is fixedly connected to a connecting ring 6 for convenient installation and connection.

[0027] A positioning hole 7 is provided on the surface of the connecting ring 6, and three clamping plates 8 are fixedly connected to the top of the connecting ring 6. A connecting groove 9 is provided at the bottom of one side of the clamping plate 8. A sealing ring 10 is provided on the top of the connecting ring 6, and three second mounting holes 11 are provided on the surface of the sealing ring 10. A positioning column 12 is fixedly connected to the bottom of the sealing ring 10. The positioning hole 7 can be used to limit the installation of the sealing ring 10, and the positioning column 12 can be inserted into the inside of the positioning hole 7 to improve the fixing effect of the sealing ring 10. The cooperation between the second mounting hole 11 and the positioning hole 7 can facilitate the insertion of the screw to squeeze the clamp engaged in the connecting groove 9, thereby improving the stability of the engagement. The cooperation between the clamping plate 8 and the connecting groove 9 can facilitate the connection and installation.

[0028] As attached Figure 3-5 As shown, the diameter of the first mounting hole 5 is the same as the diameter of the guide tube lower ring 2. The guide tube lower ring 2 is located in the middle of the first mounting hole 5. The first mounting hole 5 facilitates the smooth passage of the single crystal through the guide tube, and facilitates the installation of water-cooled inner guide and thermal insulation materials inside. The guide tube lower ring 2 is set so that the guide tube can be as close to the single crystal surface as possible, thereby accelerating the heat dissipation of the single crystal surface.

[0029] As attached Figure 3-5 As shown, the limiting snap ring 3 is arranged at the bottom of the inner cavity of the guide tube body 1, and the wall of the limiting snap ring 3 is in contact with the wall of the bottom of the inner cavity of the guide tube body 1. The limiting snap ring 3 can be used to limit the installation of the guide tube lower ring 2 to prevent the guide tube lower ring 2 from falling from the bottom of the inner cavity of the guide tube body 1, thereby ensuring the installation stability of the guide tube lower ring 2.

[0030] As attached Figure 1 , 2As shown in FIGS. 3 and 5 , there are several positioning holes 7 , the second mounting holes 11 and the positioning columns 12 are staggered, the three second mounting holes 11 are located at one end of the bottom of the card plate 8 , and the sealing ring 10 is installed and fixed through the positioning holes 7 .

[0031] As attached Figure 2 , 3 As shown in FIG. 5 , the diameter of the positioning column 12 is the same as the diameter of the positioning hole 7. The positioning column 12 is inserted into the corresponding positioning hole 7. The sealing ring 10 can be positioned by the positioning column 12 to improve the installation stability of the sealing ring 10 and the fastening strength of the guide tube body 1.

[0032] As attached Figure 1-5 As shown, the diameter of the second mounting hole 11 is the same as the diameter of the positioning hole 7, and the second mounting hole 11 corresponds to the corresponding positioning hole 7. By inserting a screw into the inside of the positioning hole 7 and passing through the second mounting hole 11, the clamp connected to the connecting groove 9 is squeezed to improve the stability of the connection between the clamp plate 8 and the matching clamp.

[0033] As attached Figure 1-5 As shown, the cross-sectional shape of the clamping plate 8 is set to be "L"-shaped, and three clamping plates 8 are evenly distributed on the top of the connecting ring 6. One end of the top wall of the inner cavity of the connecting groove 9 is lower than the other end. Through the cooperation of the clamping plate 8 and the connecting groove 9, and connected with the matching clamping parts, the fastening connection is achieved by rotating the clamping plate, which is convenient for installation and use and improves the stability of the connection.

[0034] Working principle of the utility model: when in use, when the bottom of the guide tube body 1 is damaged and affects the crystal growth capture effect, it can be completed by replacing the guide tube lower ring 2, so that part of the guide tube body 1 can be reused, the replacement cost of a single piece is low, and the service life of the guide tube body 1 is extended, and the installation of the guide tube lower ring 2 is limited by the limiting clamp ring 3, and the bottom of the guide tube can be made closer to the silicon solution through the guide tube flat bottom 4, so as to accelerate the gas flow speed above the liquid, increase the rate of gas volatile oxygen, and improve the quality of single crystals;

[0035] By setting the sealing ring 10, the sealing strength of the installation can be improved, and the positioning column 12 is inserted into the interior of the positioning hole 7 to limit the installation of the sealing ring 10. The clamping connection between the clamping plate 8 and the connecting groove 9 and the clamping piece is convenient for installation and disassembly. By inserting a screw into the interior of the positioning hole 7 and passing through the second mounting hole 11 to squeeze the bottom of the clamping piece, the connection strength between the clamping piece and the clamping plate 8 and the connecting groove 9 can be improved to avoid loosening and improve the use effect.

[0036] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A lower ring type outer guide tube for producing single crystals by Czochralski method, comprising a guide tube body (1), characterized in that: A first mounting hole (5) is provided at the bottom of the guide tube body (1); a guide tube lower ring (2) is provided at the bottom of the guide tube body (1); an outer ring of the guide tube lower ring (2) is fixedly connected to a limit clamping ring (3); an inner ring of the guide tube body (1) is fixedly connected to a guide tube flat bottom (4); and a top outer ring of the guide tube body (1) is fixedly connected to a connecting ring (6); A positioning hole (7) is provided on the surface of the connecting ring (6); three clamping plates (8) are fixedly connected to the top of the connecting ring (6); a connecting groove (9) is provided at the bottom of one side of the clamping plate (8); a sealing ring (10) is provided on the top of the connecting ring (6); three second mounting holes (11) are provided on the surface of the sealing ring (10); and a positioning column (12) is fixedly connected to the bottom of the sealing ring (10).

2. The lower ring type outer guide tube for producing single crystals by the Czochralski method according to claim 1 is characterized in that: The diameter of the first mounting hole (5) is the same as the diameter of the guide tube lower ring (2), and the guide tube lower ring (2) is located in the middle of the first mounting hole (5).

3. The lower ring type outer guide tube for producing single crystals by Czochralski method according to claim 1, characterized in that: The limiting clamp ring (3) is arranged at the bottom of the inner cavity of the guide tube body (1), and the wall of the limiting clamp ring (3) fits with the wall of the bottom of the inner cavity of the guide tube body (1).

4. The lower ring type outer guide tube for producing single crystals by Czochralski method according to claim 1, characterized in that: The number of the positioning holes (7) is several, the second mounting holes (11) and the positioning columns (12) are staggered, and the three second mounting holes (11) are located at one end of the bottom of the clamping plate (8).

5. The lower ring type outer guide tube for producing single crystals by Czochralski method according to claim 1, characterized in that: The diameter of the positioning column (12) is the same as the diameter of the positioning hole (7), and the positioning column (12) is inserted into the corresponding positioning hole (7).

6. The lower ring type outer guide tube for producing single crystals by Czochralski method according to claim 1, characterized in that: The diameter of the second mounting hole (11) is the same as the diameter of the positioning hole (7), and the second mounting hole (11) corresponds to the corresponding positioning hole (7).

7. The lower ring type outer guide tube for producing single crystals by Czochralski method according to claim 1, characterized in that: The cross-sectional shape of the clamping plate (8) is set to be "L"-shaped, and the three clamping plates (8) are evenly distributed on the top of the connecting ring (6), and one end of the top wall of the inner cavity of the connecting groove (9) is lower than the other end.

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