Simple device for rapidly measuring morphology of sapphire-based gallium nitride

By designing a simple device including a base plate, a fixed bracket and a measuring rod, the first electronic dial gauge realizes the three-dimensional morphology measurement of the surface of a sapphire-based gallium nitride wafer, the existing equipment is solved and the rapid, accurate and low-cost measurement effect is achieved.

CN222652120UActive Publication Date: 2025-03-21YUANSHAN ADVANCED MATERIAL TECH INC
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Patent Information

Application Number
CN202421819663.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-07-30
Publication Date
2025-03-21
Estimated Expiration
2034-07-30

AI Technical Summary

Technical Problem

The existing sapphire-based gallium nitride morphological measurement equipment is expensive, complex in operation, and requires professional measurement, making it difficult to meet the needs of quick confirmation on site.

Method used

A simple device is designed, including a base plate, a fixed bracket and a measuring rod. A positioning structure is provided in the base plate, and a first electronic dial is arranged on the measuring rod. Through the up and down movement of the measuring rod and the rotation of the wafer, three-dimensional morphology measurement of the wafer surface is realized.

Benefits of technology

It realizes fast, accurate and low-cost three-dimensional morphological measurement of the surface of sapphire-based gallium nitride wafers. It is simple to operate and is suitable for wafers of different specifications and has a wide range of applications.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a simple device for rapidly measuring sapphire-based gallium nitride morphology, which comprises a bottom plate, fixed supports and a measuring rod, a positioning structure is arranged in the middle of the bottom plate to be suitable for placing a wafer, the fixed supports are symmetrically arranged on two sides of the top of the bottom plate and extend along the vertical direction, and the measuring rod is arranged on the bottom plate. Wherein the measuring rod is arranged between the two fixed supports in a manner of directionally moving along the vertical direction, first electronic dial indicators capable of covering the positioning structure in the horizontal direction are uniformly distributed on the measuring rod, and measuring ends at the bottom ends of the first electronic dial indicators face the positioning structure so as to measure the morphology of a wafer. The first electronic dial indicator is in electric signal connection with a display screen. The simple device for rapidly measuring the sapphire-based gallium nitride morphology can rapidly measure the three-dimensional morphology of the wafer, and is simple and convenient to operate and low in cost.
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Description

Technical Field

[0001] The utility model relates to the technical field of wafer morphology measurement equipment, in particular to a simple device for rapidly measuring the morphology of sapphire-based gallium nitride. Background Art

[0002] Gallium nitride on sapphire, or sapphire-based wafers, are the basic raw materials in semiconductor devices. The three-dimensional morphology of the wafer surface has a relatively direct and important impact on the technical performance of semiconductor devices.

[0003] Existing sapphire-based GaN topography measurement equipment is expensive and requires specialized site personnel to perform measurements, which creates many inconveniences when on-site confirmation of measurements is required. Utility Model Content

[0004] The embodiments of the present application provide a simple device for rapidly measuring the morphology of sapphire-based gallium nitride, which can rapidly measure the three-dimensional morphology of a wafer surface, is simple and convenient to operate, and has low cost.

[0005] An embodiment of the present application provides a simple device for quickly measuring the morphology of sapphire-based gallium nitride, comprising a base plate, a fixed bracket and a measuring rod, wherein a positioning structure is provided in the middle of the base plate to be suitable for placing a wafer, wherein the fixed brackets are symmetrically arranged on both sides of the top of the base plate and extend in the vertical direction, wherein the measuring rod is arranged between the two fixed brackets in a manner capable of directionally moving in the vertical direction, and the measuring rod is uniformly provided with a first electronic micrometer capable of covering the positioning structure in the horizontal direction, the measuring end of the bottom end of the first electronic micrometer is facing the positioning structure to measure the morphology of the wafer, and the electrical signal of the first electronic micrometer is connected to a display screen.

[0006] In a possible implementation, the positioning structure is composed of a plurality of concentric circular grooves.

[0007] In a possible implementation, the multiple concentric circular grooves include at least one 4-inch circular groove and one 6-inch circular groove.

[0008] In a possible implementation, special-shaped structures are symmetrically provided on opposite inner sides of the two fixing brackets, and the measuring rod is provided with a special-shaped groove that is interference-fitted with the special-shaped structure.

[0009] In a possible implementation, a fastening plate is installed on the outer side of the fixing bracket, and the fastening plate is detachably connected to the measuring rod via a fastening screw.

[0010] In one possible implementation, the measuring rod includes a main measuring rod and an auxiliary measuring rod connected at a predetermined angle in the horizontal direction, wherein the main measuring rod is connected between the two fixed brackets, wherein the auxiliary measuring rod and the main measuring rod are kept concentric, and second electronic micrometers are evenly distributed on the auxiliary measuring rods, and the second electronic micrometers are electrically connected to the display screen.

[0011] In a possible implementation, an arc-shaped reinforcement rib is connected between the auxiliary measuring rod and the main measuring rod, and the arc-shaped reinforcement rib and the concentric circular groove maintain the same curvature.

[0012] In a possible implementation, rubber feet are evenly installed on the bottom of the base plate.

[0013] Beneficial effects: Compared with the prior art, the simple device for rapidly measuring the morphology of gallium nitride on sapphire provided by the present application facilitates rapid and accurate placement of the wafer through the positioning structure of the base plate. After the wafer is in place, the measuring rod with the first electronic micrometer is moved downward. The data of multiple points on the wafer surface can be directly read through the first electronic micrometer. The measuring rod is then moved upward. After rotating the wafer, the operation is repeated again, and the measuring rod is moved down to the same height position. The three-dimensional morphology of the wafer surface can then be obtained, thereby realizing online measurement and real-time monitoring of the wafer. The operation is simple and convenient, does not require site professional operation, and is low in cost.

[0014] The positioning structure consists of multiple concentric circular grooves, making this simple device suitable for measuring wafers of different specifications and having a wide range of applications;

[0015] The interference fit between the measuring rod and the fixing bracket enables the measuring rod to be moved up and down manually, which is easy to operate. The fastening plate and fastening screws can fix the measuring rod after it is moved into place, facilitating stable reading of measurement data.

[0016] The cooperation between the main measuring rod and the auxiliary measuring rod can simultaneously measure and read data from multiple points on the wafer surface, thereby further improving work efficiency.

[0017] These and other purposes, features and advantages of the present invention are fully reflected in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 The figure shows a schematic structural diagram of a simple device for rapidly measuring the morphology of sapphire-based gallium nitride according to the present application.

[0019] Figure 2 A schematic diagram of the partial structure of a simple device for rapidly measuring the morphology of sapphire-based gallium nitride is shown in the present application. DETAILED DESCRIPTION

[0020] The following description is intended to disclose the present invention and enable those skilled in the art to implement the present invention. The preferred embodiments described below are provided for illustrative purposes only, and those skilled in the art will readily appreciate other obvious variations. The basic principles of the present invention as defined in the following description may be applied to other embodiments, variations, improvements, equivalents, and other technical solutions that do not depart from the spirit and scope of the present invention.

[0021] Those skilled in the art should understand that, in the disclosure of the specification, the terms "longitudinal", "transverse", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicating the orientation or position relationship are based on the orientation or position relationship shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the above terms cannot be understood as limiting the present invention.

[0022] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the elements may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0023] refer to Figure 1 and Figure 2 The embodiment of the present application provides a simple device for quickly measuring the morphology of sapphire-based gallium nitride, including a base plate 10, a fixed bracket 20 and a measuring rod 30, wherein a positioning structure 11 is provided in the middle of the base plate 10 to be suitable for placing a wafer, wherein the fixed bracket 20 is symmetrically arranged on both sides of the top of the base plate 10 and extends in the vertical direction, wherein the measuring rod 30 is arranged between the two fixed brackets 20 in a manner that can be directional moved in the vertical direction, and the measuring rod 30 is evenly distributed with a first electronic micrometer 31 that can cover the positioning structure 11 in the horizontal direction, and the measuring end of the bottom end of the first electronic micrometer 31 is facing the positioning structure 11 to measure the morphology of the wafer, and the electrical signal of the first electronic micrometer 31 is connected to a display screen, so that the data of the first electronic micrometer 31 can be directly reflected on the display screen.

[0024] During the measurement process, the wafer is first placed on the positioning structure 11, and then the measuring rod 30 with multiple first electronic micrometers 31 is moved down to a predetermined position. In this way, the data of multiple points on the wafer in the same radial direction can be measured through multiple first electronic micrometers 31. Then the measuring rod 30 is moved up, the wafer is rotated, and then the measuring rod 30 is moved down to the predetermined position again. The data of multiple points in another radial direction of the wafer can be measured. Similarly, the three-dimensional morphology data of the wafer surface can be obtained, and online measurement of the wafer can be realized. Monitoring at any time is simple and convenient to operate, and no site staff operation is required. In addition, the simple device is easy to manufacture and has low cost.

[0025] In one embodiment, the positioning structure 11 is composed of a plurality of concentric circular grooves, thereby enabling positioning of wafers of different diameters through different concentric circular grooves, so that the simple device can be suitable for measuring wafers of various specifications at the same time and has a wide range of applications.

[0026] Further preferably, the plurality of concentric circular grooves include at least one 4-inch circular groove and one 6-inch circular groove, whereby the simple device can at least measure 4-inch wafers and 6-inch wafers.

[0027] In one embodiment, the two fixed brackets 20 are symmetrically provided with special-shaped structures 21, such as prismatic structures, on the relative inner sides. At the same time, the measuring rod 30 is provided with a special-shaped groove 301 that is interference-fitted with the special-shaped structure 21, so that the measuring rod 30 can be directly moved in the vertical direction, which is convenient to operate. At the same time, after moving into place, based on the interference fit relationship between the measuring rod 30 and the fixed bracket 20, the measuring rod 30 is not easy to change its position.

[0028] Further preferably, a fastening plate 22 is installed on the outer side of the fixed bracket 20, and the fastening plate 22 is detachably connected to the measuring rod 30 by a fastening screw 23. In this way, when the measuring rod 30 is moved into position, the measuring rod 30 can be locked on the fixed bracket 20 by the fastening plate 22 and the fastening screw 23, so as to facilitate stable reading of the data of the first electronic micrometer 31.

[0029] In one embodiment, the measuring rod 30 includes a main measuring rod 32 and a secondary measuring rod 33 which are connected at a predetermined angle in the horizontal direction, wherein the main measuring rod 32 is connected between the two fixed brackets 20, and the secondary measuring rod 33 and the main measuring rod 32 are kept concentric, that is, the secondary measuring rod 33 is not connected to the fixed bracket 20. In addition, the secondary measuring rod 33 is evenly distributed with a second electronic micrometer 34, and the second electronic micrometer 34 is electrically connected to the display screen. In this way, the data of multiple points in two radial directions of the wafer can be measured and read at one time through the first electronic micrometer 31 and the second electronic micrometer 34, which can reduce the number of times the wafer is moved and the number of times the measuring rod 30 is lifted and lowered, thereby effectively improving work efficiency.

[0030] Further preferably, an arc-shaped reinforcement rib 35 is connected between the auxiliary measuring rod 33 and the main measuring rod 32, and the arc-shaped reinforcement rib 35 and the concentric circular groove maintain the same bending curvature, so that the structural connection strength between the auxiliary measuring rod 33 and the main measuring rod 32 can be enhanced by the arc-shaped reinforcement rib 35, so that the auxiliary measuring rod 33 and the second electronic micrometer 34 thereon can work stably to ensure the measurement quality.

[0031] In one embodiment, rubber feet 12 are evenly installed on the bottom of the base plate 10, for example, rubber feet 12 are installed at the four corners of the base plate 10, so as to ensure that the base plate 10 is stably maintained in a horizontal position.

[0032] It should be noted that the terms "first" and "second" in this application are used for descriptive purposes only and do not indicate any order. They cannot be understood as indicating or implying relative importance. These terms can be interpreted as names.

[0033] Those skilled in the art will appreciate that the embodiments of the present invention described above and shown in the accompanying drawings are provided for illustrative purposes only and do not limit the present invention. The advantages of the present invention have been fully and effectively realized. The functional and structural principles of the present invention have been demonstrated and illustrated in the embodiments. Any variations or modifications may be made to the embodiments of the present invention without departing from the principles described.

Claims

1. A simple device for quickly measuring the morphology of sapphire-based gallium nitride, characterized in that: It includes a base plate, a fixed bracket and a measuring rod, wherein a positioning structure is arranged in the middle of the base plate to be suitable for placing a wafer, wherein the fixed brackets are symmetrically arranged on both sides of the top of the base plate and extend in the vertical direction, wherein the measuring rod is arranged between the two fixed brackets in a manner capable of being directed and moved in the vertical direction, and the measuring rod is evenly provided with a first electronic micrometer capable of covering the positioning structure in the horizontal direction, the measuring end at the bottom end of the first electronic micrometer is facing the positioning structure to measure the morphology of the wafer, and the electrical signal of the first electronic micrometer is connected to a display screen.

2. The simple device for rapidly measuring the morphology of GaN on sapphire as claimed in claim 1, characterized in that: The positioning structure is composed of a plurality of concentric circular grooves.

3. The simple device for rapidly measuring the morphology of GaN on sapphire as claimed in claim 2, characterized in that: The multiple concentric circular grooves include at least one 4-inch circular groove and one 6-inch circular groove.

4. The simple device for rapidly measuring the morphology of GaN on sapphire as claimed in claim 2, characterized in that: Special-shaped structures are symmetrically arranged on the inner sides of the two fixing brackets facing each other, and the measuring rod is provided with a special-shaped groove which is interference-fitted with the special-shaped structure.

5. The simple device for rapidly measuring the morphology of GaN on sapphire as claimed in claim 4, characterized in that: A fastening plate is installed on the outer side of the fixing bracket, and the fastening plate is detachably connected to the measuring rod through a fastening screw.

6. The simple device for rapidly measuring the morphology of sapphire-based gallium nitride according to claim 4 or 5, characterized in that: The measuring rod includes a main measuring rod and an auxiliary measuring rod connected at a predetermined angle in the horizontal direction, wherein the main measuring rod is connected between the two fixed brackets, wherein the auxiliary measuring rod and the main measuring rod are kept concentric, and second electronic micrometers are evenly distributed on the auxiliary measuring rod, and the second electronic micrometer is connected to the display screen with electrical signals.

7. The simple device for rapidly measuring the morphology of GaN on sapphire as claimed in claim 6, characterized in that: An arc-shaped reinforcing rib is connected between the auxiliary measuring rod and the main measuring rod, and the arc-shaped reinforcing rib and the concentric circular groove maintain the same bending curvature.

8. The simple device for rapidly measuring the morphology of GaN on sapphire as claimed in claim 1, characterized in that: The bottom of the bottom plate is evenly equipped with rubber pads.