Wafer thickness automatic detection device

Abstract

The utility model relates to the technical field of semiconductor processing equipment, in particular to a wafer thickness automatic detection device, which comprises a spectrograph, a carrying disc, a rotary driving piece, a first optical fiber probe and a linear module, wherein the spectrograph, the rotary driving part and the linear module are all mounted on the base; the carrying disc is mounted at the output end of the rotary driving part; the first optical fiber probe is located above the carrying disc, installed at the output end of the linear module and electrically connected with the spectrograph through a connecting line. The detection device not only has the advantages of being convenient for taking and placing the wafer, small in measurement error, high in detection efficiency and the like, but also has the characteristic of relatively high measurement precision, and solves the problems of low measurement precision, low measurement efficiency and large measurement error in the prior art.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, in particular to an automatic wafer thickness detection device. Background Art

[0002] With the rapid development of the electronic information industry, the market has higher and higher requirements for the performance and reliability of integrated circuit chips. In order to meet these requirements, it is necessary to continuously improve the precision and efficiency of integrated circuit manufacturing technology. As the silicon wafer used to make silicon semiconductor circuits, the wafer has become smaller and smaller in feature size, more and more interconnected layers, and its diameter has also been increasing with the improvement of manufacturing technology. To achieve multi-layer wiring, the wafer surface must have extremely high flatness, smoothness and cleanliness. Therefore, wafer thickness measurement is a key link in the process of manufacturing chips with high performance and high reliability.

[0003] At present, there are many methods for detecting wafer thickness, such as capacitance thickness measurement sensor measurement, mechanical measurement, optical measurement, and X-ray diffraction thickness measurement, but these methods all have certain limitations. The method of measuring wafer thickness with a spectrometer, namely the spectral measurement method, as one of the optical measurement methods, has the advantages of high measurement stability, no need to contact the sample surface, and no scratches or deformation of the sample surface. However, the spectral measurement method can usually only achieve micron-level accuracy in terms of measurement accuracy; and in order to minimize scattering and interference in the optical path, the optical path and the wafer are usually required to be set vertically, which limits the position space of the wafer; when it is necessary to detect the thickness of different positions of the wafer, in order to avoid manual contact with the wafer and improve the detection efficiency, a conveyor belt or chain is often used to carry the wafer in a circular rotation; although the reciprocating circulation of the conveyor belt or chain will improve the efficiency, since the wafer is always in motion, it will cause a certain degree of error in the measurement result, and it is not conducive to the replacement of the wafer. If the device is stopped to replace the wafer, it will directly reduce the detection efficiency of the detection device for the wafer. Therefore, it is very necessary to propose a high-precision and high-efficiency non-contact wafer thickness detection method.

[0004] The utility model provides an automatic wafer thickness detection device to solve the problems of low measurement accuracy, low measurement efficiency and large measurement error of the measurement device and measurement method in the prior art. Utility Model Content

[0005] The utility model aims to provide a wafer thickness automatic detection device to solve the problems of low measurement accuracy, low measurement efficiency and large measurement error in the existing measurement method in the prior art.

[0006] The technical solution of the utility model is: an automatic wafer thickness detection device, comprising: a spectrometer, a carrier plate, a rotary drive component, a first optical fiber probe, and a linear module;

[0007] Among them, the spectrometer, the rotary drive component, and the linear module are all installed on a base; the carrier is installed at the output end of the rotary drive component, and the upper end surface of the carrier is used to place the wafer; the first optical fiber probe is located above the carrier, installed at the output end of the linear module, and is electrically connected to the spectrometer through a connecting line, and the light emitted by the first optical fiber probe is vertically directed toward the wafer.

[0008] Preferably, the linear module includes a lifting assembly and a transverse movement assembly; the lifting assembly and the transverse movement assembly both adopt a combination of a servo motor and a screw rod; the transverse movement assembly is fixedly connected to the output end of the lifting assembly, and the first optical fiber probe is fixedly connected to the output end of the transverse movement assembly; the linear module drives the first optical fiber probe to move longitudinally and transversely.

[0009] Preferably, the rotary drive member is a motor, the carrier is mounted on an output end of the motor, and the motor drives the carrier to rotate.

[0010] Preferably, a plurality of limit blocks for counteracting the outer contour of the wafer are arranged on the end surface of the carrier; the carrier is also provided with support blocks for supporting the wafer, and the support blocks are distributed in the space surrounded by the limit blocks to form a material removal gap between the lower end surface of the wafer and the upper end surface of the carrier; the height of the limit blocks is higher than the height of the support blocks.

[0011] Preferably, the spectrometer is provided with a light source emitting end and a spectrometer detecting end; the connecting wires include a light source connecting wire and a spectrometer connecting wire.

[0012] Preferably, the light source connecting line and the spectrometer connecting line are both electrically connected to the first optical fiber probe.

[0013] Preferably, a microscope is arranged below the first optical fiber probe, and the microscope and the optical fiber probe are fixedly connected via a sleeve; the first optical fiber probe and the microscope are coaxial.

[0014] Preferably, the microscope comprises a microscope light source body, a telescopic tube, and an objective lens; the microscope light source body is a convex structure.

[0015] Preferably, a second optical fiber probe is provided on the boss of the microscope light source body;

[0016] The spectrometer connecting line is electrically connected to the first optical fiber probe, and the light source connecting line is electrically connected to the second optical fiber probe.

[0017] Compared with the prior art, the advantages of the utility model are:

[0018] (1) The utility model provides an automatic wafer thickness detection device, which adopts a spectrometer to automatically measure the thickness of the wafer in a non-contact manner. It not only has the advantages of convenient wafer placement, small measurement error, and high detection efficiency, but also has the characteristics of high measurement accuracy. It solves the problems of low measurement accuracy, low measurement efficiency, and large measurement error in the measurement devices and measurement methods in the prior art, and can be widely used in the field of integrated circuit manufacturing.

[0019] (2) The utility model provides an automatic wafer thickness detection device, which adopts a rotary drive member to drive the carrier to rotate, and then drives the wafer to rotate, and at the same time adopts a linear module to drive the first optical fiber probe to move, which can effectively improve the detection efficiency of the spectrometer; limit blocks and support blocks are arranged on the carrier, which can prevent the wafer from being offset or sliding due to the influence of centrifugal force while facilitating the placement and replacement of the wafer, thereby avoiding measurement errors caused by inaccurate measurement position, and improving the detection accuracy of the spectrometer.

[0020] (3) The utility model provides an automatic wafer thickness detection device, in which a microscope is arranged below a first fiber optic probe. The microscope can focus the light emitted by a light source, which can effectively reduce the detection surface and improve the detection accuracy of the detection device; and a second fiber optic probe is arranged on the light source body of the microscope, and the light source emitting end and the spectrometer detection end can be connected to the second fiber optic probe and the first fiber optic probe respectively, so as to avoid signal interference caused by the light emitted by the light source to the reflected light, thereby improving the sensitivity and accuracy of the spectrometer detection device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The utility model is further described below in conjunction with the accompanying drawings and embodiments:

[0022] Figure 1 It is a three-dimensional diagram of the detection device of the utility model;

[0023] Figure 2 It is a three-dimensional diagram of the detection device of the utility model;

[0024] Figure 3 It is a right side view of the detection device of the utility model;

[0025] Figure 4 It is a three-dimensional diagram of the detection device of the utility model;

[0026] Among them: 1. spectrometer; 11. light source emitting end; 12. spectrometer detection end; 2. linear module; 21. lifting assembly; 22. transverse movement assembly; 3. carrier; 31. limit block; 32. support block; 33. material taking gap; 4. rotating drive member; 5. first optical fiber probe; 51. second optical fiber probe; 6. microscope; 61. microscope light source body; 62. telescopic sleeve; 63. objective lens; 7. sleeve; 8. connecting wire; 81. spectrometer connecting wire; 82. light source connecting wire; 10. base. DETAILED DESCRIPTION

[0027] The following is a further detailed description of the present invention in conjunction with specific embodiments:

[0028] In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "longitudinal", "lateral", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description. They do not indicate or imply that the referred parts must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.

[0029] Implementation Method 1

[0030] A wafer thickness automatic detection device, such as Figure 1 As shown, it includes: a spectrometer 1, a carrier plate 3, a rotary drive 4, a first optical fiber probe 5, and a linear module 2. Figure 2 As shown, the spectrometer 1, the rotary drive member 4, and the linear module 2 are all installed on the base 10; the carrier 3 is installed at the output end of the rotary drive member 4, and the upper end surface of the carrier 3 is used to place the wafer; the first optical fiber probe 5 is located above the carrier 3, installed at the output end of the linear module 2, and is electrically connected to the spectrometer 1 through the connecting line 8, and the light emitted by the first optical fiber probe 5 is vertically emitted to the wafer.

[0031] The linear module 2 includes a lifting assembly 21 and a transverse assembly 22; and both the lifting assembly 21 and the transverse assembly 22 use a combination of a servo motor and a screw rod; the transverse assembly 22 is fixedly connected to the output end of the lifting assembly 21, and the first optical fiber probe 5 is fixedly connected to the output end of the transverse assembly 22; the linear module 2 drives the first optical fiber probe 5 to move longitudinally or transversely. In this embodiment or other embodiments, there are multiple ways to fix the first optical fiber probe 5 and the output end of the transverse assembly 22; for example, the first optical fiber probe 5 is directly fixedly connected to the output end of the transverse assembly 22 by nesting, inserting, etc.; or, the first optical fiber probe 5 is first fixedly connected to a probe fixture, an adapter plate, and other components, and then the component connected with the first optical fiber probe 5 is fixedly connected to the output end of the transverse assembly 22.

[0032] The rotating drive member 4 adopts a motor, and the carrier 3 is installed at the output end of the motor, and the motor drives the carrier 3 to rotate. A plurality of limit blocks 31 for contacting with the outer contour of the wafer and support blocks 32 for supporting the wafer are arranged on the end face of the carrier 3, and the support blocks 32 are distributed in the space surrounded by the limit blocks 31; the support blocks 32 support the wafer, so that a material taking gap 33 is left between the lower end face of the wafer and the carrier 3, which is convenient for taking and placing the wafer; the height of the limit block 31 is higher than the height of the support block 32; so that the limit block 31 plays a role in fixing the wafer, and when the motor drives the carrier to rotate, and then drives the wafer to rotate, the limit block 31 can prevent the wafer from sliding, deflecting, etc. due to the influence of centrifugal force, resulting in errors in the detection results.

[0033] In addition, the spectrometer 1 is provided with a light source emitting end 11 and a spectrometer detecting end 12 ; the connecting line 8 includes a light source connecting line 82 and a spectrometer connecting line 81 ; the light source connecting line 82 and the spectrometer connecting line 81 are both electrically connected to the first optical fiber probe 5 .

[0034] The wafer is placed on the carrier plate 3, the carrier plate 3 is driven to rotate by the motor, and the first optical fiber probe 5 is driven to move longitudinally and transversely by the linear module 2 to detect the thickness of different positions of the wafer. When the linear module 2 drives the first optical fiber probe 5 to move transversely and the carrier plate 3 is stationary, the moving path of the light emitted by the first optical fiber probe 5 passes through the wafer and the center of the carrier plate 3; when the motor drives the carrier plate 3 to rotate and the first optical fiber probe 5 is stationary, the annular path formed by the light emitted by the first optical fiber probe 5 on the wafer surface is concentric with the carrier plate 3 and the wafer.

[0035] Implementation Method 2

[0036] A wafer thickness automatic detection device, which differs from the embodiment 1 in that: a microscope 6 is arranged below the first optical fiber probe 5, the microscope 6 and the first optical fiber probe 5 are fixedly connected through a sleeve 7, and the first optical fiber probe 5 and the microscope 6 are coaxial; the microscope 6 includes a microscope light source body 61, a telescopic sleeve 62, and an objective lens 63; secondly, the microscope light source body 61 is a convex structure. A second optical fiber probe 51 is also arranged on the boss of the microscope light source body 61; the first optical fiber probe 5 is electrically connected to the spectrometer detection end 12 through a spectrometer connection line 81, and the second optical fiber probe 51 is connected to the light source emission end 11 through a light source connection line 82. The microscope 6 focuses the light emitted by the second optical fiber probe 51, so that the light is focused into a smaller point, further reducing the detection surface, improving the accuracy of the detection, and thus making the measurement accuracy of the spectrum detection device reach a higher level. The spectrometer connection line 81 and the light source connection line 82 are respectively connected to different optical fiber probes, which can avoid the light emitted by the light source from causing signal interference to the light reflected by the wafer received by the spectrometer detection end, thereby improving the sensitivity and accuracy of the detection device.

[0037] The above embodiments are only for illustrating the technical concept and features of the utility model, and their purpose is to enable people familiar with this technology to understand the content of the utility model and implement it accordingly, and they cannot be used to limit the protection scope of the utility model. For those skilled in the art, it is obvious that the utility model is not limited to the details of the above exemplary embodiments, and the utility model can be implemented in other specific forms without departing from the spirit or basic features of the utility model. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive. The scope of the utility model is limited by the attached claims rather than the above description, so it is intended to include all changes within the meaning and scope of the equivalent elements of the claims in the utility model.

Claims

1. A wafer thickness automatic detection device, characterized in that: include: Spectrometer (1), carrier plate (3), rotary drive member (4), first optical fiber probe (5), linear module (2); The spectrometer (1), the rotary drive component (4), and the linear module (2) are all mounted on a base (10); the carrier (3) is mounted at the output end of the rotary drive component (4), and the upper end surface of the carrier (3) is used for placing wafers; The first optical fiber probe (5) is located above the carrier (3), installed at the output end of the linear module (2), and is electrically connected to the spectrometer (1) via a connecting line (8). The light emitted by the first optical fiber probe (5) is vertically directed toward the wafer.

2. The wafer thickness automatic detection device according to claim 1, characterized in that: The linear module (2) comprises a lifting component (21) and a transverse movement component (22); the lifting component (21) and the transverse movement component (22) both adopt a combination of a servo motor and a screw rod; the transverse movement component (22) is fixedly connected to the output end of the lifting component (21), and the first optical fiber probe (5) is fixedly connected to the output end of the transverse movement component (22); the linear module (2) drives the first optical fiber probe (5) to move longitudinally and transversely.

3. The wafer thickness automatic detection device according to claim 2, characterized in that: The rotary drive member (4) is a motor, the carrier plate (3) is mounted at the output end of the motor, and the motor drives the carrier plate (3) to rotate.

4. The automatic wafer thickness detection device according to claim 3 is characterized in that: A plurality of limit blocks (31) for abutting against the outer contour of the wafer are arranged on the end surface of the carrier (3); a support block (32) for supporting the wafer is also arranged on the carrier (3); the support blocks (32) are distributed in the space surrounded by the limit blocks (31) so that a material removal gap (33) is formed between the lower end surface of the wafer and the upper end surface of the carrier (3); the height of the limit blocks (31) is higher than the height of the support blocks (32).

5. The wafer thickness automatic detection device according to claim 4, characterized in that: The spectrometer (1) is provided with a light source emission end (11) and a spectrometer detection end (12); The connecting line (8) comprises a light source connecting line (82) and a spectrometer connecting line (81).

6. The wafer thickness automatic detection device according to claim 5, characterized in that: The light source connecting line (82) and the spectrometer connecting line (81) are both electrically connected to the first optical fiber probe (5).

7. An automatic wafer thickness detection device according to any one of claims 1 to 5, characterized in that: A microscope (6) is arranged below the first optical fiber probe (5); the microscope (6) and the optical fiber probe (5) are fixedly connected via a sleeve (7); the first optical fiber probe (5) and the microscope (6) are coaxial.

8. The automatic wafer thickness detection device according to claim 7, characterized in that: The microscope (6) comprises a microscope light source body (61), a telescopic sleeve (62), and an objective lens (63); the microscope light source body (61) is a convex structure.

9. The automatic wafer thickness detection device according to claim 8, characterized in that: A second optical fiber probe (51) is arranged on the boss of the microscope light source body (61); The spectrometer connecting line (81) is electrically connected to the first optical fiber probe (5), and the light source connecting line (82) is electrically connected to the second optical fiber probe (51).

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