Portable flash memory mobile semiconductor memory

Abstract

The utility model relates to the technical field of storage equipment, and discloses a portable flash memory mobile semiconductor memory, one end of a memory body is provided with a USB (Universal Serial Bus) interface, a flash memory chip formed by a floating gate MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) group is arranged in the memory body, the floating gate MOSFET group consists of floating gate MOSFETs, and the floating gate MOSFETs are connected with the USB interface. The floating gate MOSFET achieves storage and removal of charges on a floating gate by changing voltage on the transistor, the floating gate MOSFET group achieves data storage according to the charge condition of the floating transistor, the floating gate MOSFET group is connected with the voltage comparator, and the voltage comparator can detect voltage change on the transistor and send different voltage conditions to the display screen. Light spots with different colors are displayed, the voltage state of each floating gate MOSFET transistor is displayed at the corresponding position of the display screen, and the storage state of an internal flash memory chip is reflected through the display screen.

Description

Technical Field

[0001] The utility model relates to the technical field of storage devices, in particular to a portable flash memory mobile semiconductor storage. Background Art

[0002] Flash memory mobile storage is a semiconductor storage device, also commonly known as a USB flash drive. It uses Flash memory chips as storage media. It has multiple properties such as anti-magnetic, shock-proof, and moisture-proof, which enhances data security. It is light in weight, small in size, and easy to carry. It is often connected to various devices for use. The USB interface is the most common interface. It does not require a driver or an external power supply when used. It is plug-and-play, supports hot swapping, and has a write protection function.

[0003] The floating gate MOSFET group in the flash memory chip in the USB flash drive records information through the gain and loss of electric charge. Each floating gate MOSFET consists of two gates, a control gate and a floating gate. The two gates are separated by a dielectric material, such as silicon dioxide. The function of the control gate is to generate an electric field that can attract or repel electrons, and the floating gate acts as a container that can capture electrons. Flash memory works by adding or deleting electrons to the floating gate. When there are electrons in the floating gate, the threshold voltage of the transistor will increase, and no current will flow through the semiconductor substrate. In order to store electrons, the voltage on the transistor is relatively high. The transistor voltage on the control gate is greater than the transistor voltage on the substrate, and the electron flow rate will be Increase a lot, the electric field of the control gate will capture the electrons in the substrate and force them to carry to the inside of the floating gate, which is the write state. When the voltage comparator detects that the control gate voltage is high, it is sent to the control center, so that it displays a flashing green light at the corresponding position of the display screen, indicating that this part of the floating gate MOSFET is in the write state. Change the transistor voltage so that the transistor on the substrate is greater than the transistor voltage on the control gate. The electric field generated by the control gate will push the electrons in the floating gate to the substrate, which is erase. After detection by the voltage comparator, it is sent to the control center, so that it displays a flashing red light at the corresponding position of the display screen. Writing and erasing are irreversibly destructive to the flash memory unit, so there is a certain read and write cycle.

[0004] The storage status of the U disk cannot be directly observed during the storage process, and the overall interactive information is small. At the same time, there is no reminder during the reading, writing and erasing process. The user may accidentally unplug the U disk, resulting in reading, writing and erasing failures, and even causing irreversible damage to the user. At the same time, writing and erasing are irreversibly destructive to the flash memory unit, so there is a certain read and write cycle. When it is used too many times, its remaining read and write cycle cannot be known. If it is damaged when storing important files, the bad disk file will be lost, which will cause great trouble to the user. Utility Model Content

[0005] 1. Technical issues to be resolved

[0006] In view of the deficiencies in the prior art, the utility model provides a portable flash memory mobile semiconductor memory, which has the advantage of more intuitive storage information and solves the problem of less interactive information in semiconductor memories.

[0007] (II) Technical solution

[0008] In order to achieve the purpose of making the above-mentioned storage information more intuitive, the utility model provides the following technical solutions: a portable flash memory mobile semiconductor memory, including a memory body and a cover, a USB interface is provided at one end of the memory body, and a flash memory chip composed of a floating gate MOSFET group is provided inside, the flash memory chip is connected to the USB for writing and erasing data, the floating gate MOSFET group is composed of floating gate MOSFET transistors, each floating gate MOSFET transistor is composed of a dielectric material, a control gate, a floating gate, a transistor and a substrate, the floating gate MOSFET transistor realizes the storage and removal of the charge on its floating gate by changing the voltage on the transistor, the floating gate MOSFET group realizes the storage of data according to the charge status of the floating gate MOSFET transistor, the floating gate MOSFET group is connected to a voltage comparator, the voltage comparator can detect the voltage change on the floating gate MOSFET transistor, and send different voltage conditions to a display screen, which are displayed as light spots of different colors, and each floating gate MOSFET transistor voltage state is displayed at its corresponding position on the display screen.

[0009] Preferably, the memory body is provided with a tail buckle at one end away from the USB interface, and a pendant or a key ring can be attached through the tail buckle for easy carrying.

[0010] Preferably, a metal strip is provided on the front side of the cover, and a magnetic strip identical to the metal strip is provided on one end of the tail buckle. When the cover is inserted to store data, the cover can be adsorbed on the tail buckle to avoid loss of the cover.

[0011] Preferably, anti-slip strips made of TPR thermoplastic rubber material are provided on both sides of the storage body, which have the advantages of being environmentally friendly, non-toxic, wear-resistant, water-resistant, oil-resistant, and aging-resistant, and have good touch, anti-slip properties and softness, preventing it from slipping from the hand when held in hand and falling to the ground and causing damage.

[0012] Preferably, exhaust ports are provided on both sides of the memory body above and below the anti-slip strips to effectively prevent heat accumulation inside the memory body and ensure the normal operation of internal electronic components. At the same time, a dust removal net is provided in the exhaust port to prevent dust from entering and causing damage to internal electronic components or poor contact.

[0013] (III) Beneficial effects

[0014] Compared with the prior art, the utility model provides a portable flash memory mobile semiconductor memory, which has the following beneficial effects:

[0015] 1. The portable flash memory mobile semiconductor memory detects its working status through the voltage change of the floating gate MOSFET's own transistor, and displays the working status at the corresponding position of the voltage comparator, so that the user can observe the usage of the memory more clearly, such as how much space has been used, and can clearly understand it by observing the red range on the voltage comparator. When the memory body is working, the voltage comparator will also generate flashing light to remind the user not to unplug it to avoid data storage failure or irreversible damage to the memory. At the same time, the depth of the color on the voltage comparator is used to indicate the service life of the memory to avoid the memory from being damaged after storing important files, resulting in the loss of important files.

[0016] 2. The portable flash memory mobile semiconductor memory is provided with a tail buckle at one end of the memory body away from the USB interface, and a pendant or a key ring can be attached through the tail buckle for easy carrying. A metal strip is provided on the front side of the cover, and a magnetic strip is provided at one end of the tail buckle in the same shape as the metal strip. When inserted to store data, the cover can be adsorbed on the tail buckle to prevent the cover from being lost. Anti-slip strips made of TPR thermoplastic rubber material are provided on both sides of the memory body, which have the advantages of environmental protection, non-toxicity, wear resistance, water resistance, oil resistance, and aging resistance, and have good touch, anti-slip and softness, so as to prevent the memory from slipping from the hand when held and falling to the ground to cause damage. Exhaust ports are provided on both sides of the memory body at the upper and lower positions of the anti-slip strip, which effectively prevent heat accumulation inside the memory body and ensure the normal operation of the internal electronic devices. At the same time, a dust removal net is provided in the exhaust port to prevent dust from entering and causing damage to the internal electronic devices or poor contact. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic diagram of the structure of the utility model;

[0018] Figure 2 It is a schematic diagram of the floating gate MOSFET transistor of the utility model;

[0019] Figure 3 It is a schematic diagram of the internal connection of the utility model.

[0020] In the figure: 1. memory body; 2. cover; 11. floating gate MOSFET group; 12. voltage comparator; 13. display screen; 21. metal strip; 101. tail buckle; 102. anti-slip strip; 103. exhaust port; 111. dielectric material; 112. control gate; 113. floating gate; 114. transistor; 115. substrate. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the utility model to clearly and completely describe the technical solutions in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0022] See also Figure 1-3 A portable flash memory mobile semiconductor memory comprises a memory body 1 and a cover 2. A USB interface is provided at one end of the memory body 1, and a flash memory chip composed of a floating gate MOSFET group 11 is provided inside. The flash memory chip is connected to the USB for writing and erasing data. The floating gate MOSFET group 11 is composed of floating gate MOSFET transistors. Each floating gate MOSFET transistor is composed of a dielectric material 111, a control gate 112, a floating gate 113, a transistor 114 and a substrate 115. The floating gate MOSFET transistor realizes the storage and removal of the charge on its floating gate 113 by changing the voltage on the transistor 114. The floating gate MOSFET group 11 realizes the storage of data according to the charge status of the floating gate MOSFET transistor. The floating gate MOSFET group 11 is connected to a voltage comparator 12. The voltage comparator 12 can detect the voltage change on the floating gate MOSFET transistor and send different voltage conditions to a display screen 13, which are displayed as light spots of different colors. Each floating gate MOSFET transistor voltage state is displayed at its corresponding position on the display screen 13.

[0023] Furthermore, when there are electrons in the floating gate 113, the threshold voltage of the transistor 114 will increase accordingly, and no current will flow through the semiconductor substrate 115. At this time, the voltages of the transistor 114 on the control gate 112 and on the substrate 115 side are both 3V. The voltage status of the floating gate MOSFET is sent to the control center through the voltage comparator 12, and the corresponding position of the floating gate MOSFET on the display screen 13 is adjusted by the control center. The red color is displayed, indicating that information has been stored. In order to store electrons, the voltage on the transistor is relatively high. The voltage of the transistor 114 on the control gate 112 is greater than the voltage of the transistor 114 on the substrate 115. The electron flow rate will increase a lot, and the electric field of the control gate 112 will capture the electrons in the substrate 115, forcing them to come to the inside of the floating gate 113. This is the write state. When the voltage comparator 12 detects that the voltage of the control gate 112 is high, it is sent to the control center, causing it to display a flashing green light at the corresponding position of the display screen 13, indicating that this part of the floating gate MOSFET is in a write state, and the voltage of the transistor 114 is changed so that the voltage of the transistor 114 on the substrate 115 is greater than the voltage of the transistor 114 on the control gate 112. The electric field generated by the control gate 112 will push the electrons in the floating gate 113 to the substrate 115, which is erasing. After being detected by the voltage comparator 12, it is sent to the control center, causing it to display a flashing red light at the corresponding position of the display screen 13. Writing and erasing are irreversibly destructive to the flash memory unit, so there is a certain read and write cycle. The number of times is recorded by the control center, and the color displayed on the voltage comparator 12 is changed. The darker the color, the more times of reading and writing, and there is a risk of bad disk.

[0024] The memory body 1 is provided with a tail buckle 101 at one end away from the USB interface, and a pendant or a key ring can be attached to the tail buckle 101 for easy carrying.

[0025] The front side of the cover 2 is provided with a metal strip 21, and one end of the tail buckle 101 is provided with a magnetic strip formed in the same manner as the metal strip 21. When inserted to store data, the cover 2 can be adsorbed on the tail buckle 101 to avoid loss of the cover.

[0026] The storage body 1 is provided with anti-slip strips 102 made of TPR thermoplastic rubber material on both sides, which has the advantages of being environmentally friendly, non-toxic, wear-resistant, water-resistant, oil-resistant, and aging-resistant, and has good touch, anti-slip and softness, preventing it from slipping from the hand when held in hand and falling to the ground to cause damage.

[0027] The memory body 1 has exhaust ports 103 on both sides above and below the anti-slip strip 102, which effectively prevents heat accumulation inside the memory body 1 and ensures normal operation of internal electronic components. At the same time, a dust removal net is provided in the exhaust port 103 to prevent dust from entering and causing damage to internal electronic components or poor contact.

[0028] Working principle: When the memory body 1 is inserted into the device through the USB interface to store information, the internal transistors of the floating gate MOSFET group 11 in the flash memory chip record information through charge gain and loss. Each floating gate MOSFET consists of two gates, a control gate 112 and a floating gate 113. The two gates are separated by a dielectric material 111, such as silicon dioxide. The function of the control gate 112 is to generate an electric field that can attract or repel electrons, and the floating gate 113 acts as a container to capture electrons. Flash memory works by adding or deleting electrons to the floating gate 113. When there are electrons in the floating gate 113, the threshold voltage of the transistor 114 will increase accordingly, and no current will flow through the semiconductor substrate 115. At this time, the control gate 1 The voltage of transistor 114 on the control gate 112 and on the substrate 115 side is 3V. The voltage status of the floating gate MOSFET is sent to the control center through the voltage comparator 12. The corresponding position of the floating gate MOSFET on the display screen 13 is adjusted by the control center. The red color is displayed, which means that information has been stored. In order to store electrons, the voltage on the transistor is relatively high. The voltage of transistor 114 on the control gate 112 is greater than the voltage of transistor 114 on the substrate 115. The electron flow rate will be greatly improved. The electric field of the control gate 112 will capture the electrons in the substrate 115 and force them to come to the inside of the floating gate 113. This is the write state. When the voltage of the control gate 112 is detected to be high through the voltage comparator 12, it is sent to the control The control center displays a flashing green light at the corresponding position of the display screen 13, indicating that this part of the floating gate MOSFET is in the write state. The voltage of the transistor 114 is changed so that the voltage of the transistor 114 on the substrate 115 is greater than the voltage of the transistor 114 on the control gate 112. The electric field generated by the control gate 112 will push the electrons in the floating gate 113 to the substrate 115. This is erasing. After being detected by the voltage comparator 12, it is sent to the control center, which displays a flashing red light at the corresponding position of the display screen 13. Writing and erasing are irreversibly destructive to the flash memory unit, so there is a certain read and write cycle. The control center records the number of times and changes the color displayed on the voltage comparator 12. The darker the color, the more times of reading and writing, and the presence of a bad disk. In order to avoid the risk of data loss, the device detects the working status of the floating-gate MOSFET through the voltage change of the floating-gate MOSFET's own transistor 114, and displays the working status at the corresponding position of the voltage comparator 12, so that the user can observe the usage of the memory more clearly, such as how much space has been used, and can clearly understand it by observing the red range on the voltage comparator 12. When the memory body 1 is working, the voltage comparator 12 will also generate a flashing light to remind the user not to unplug it, so as to avoid data storage failure or irreversible damage to the memory. At the same time, the depth of the color on the voltage comparator 12 is used to indicate the service life of the memory, so as to avoid the memory from being damaged after storing important files, resulting in the loss of important files.

[0029] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0030] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A portable flash memory mobile semiconductor memory, comprising a memory body (1) and a cover (2), characterized in that: The memory body (1) is provided with a USB interface at one end, and a flash memory chip composed of a floating gate MOSFET group (11) is provided inside. The flash memory chip is connected to the USB for writing and erasing data. The floating gate MOSFET group (11) is composed of floating gate MOSFET transistors. Each floating gate MOSFET transistor is composed of a dielectric material (111), a control gate (112), a floating gate (113), a transistor (114) and a substrate (115). The floating gate MOSFET transistor stores and removes charges on its floating gate (113) by changing the voltage on the transistor (114). The floating gate MOSFET group (11) stores data according to the charge status of the floating gate MOSFET transistor. The floating gate MOSFET group (11) is connected to a voltage comparator (12). The voltage comparator (12) can detect voltage changes on the floating gate MOSFET transistor and send different voltage conditions to a display screen (13) to be displayed as light spots of different colors. Each floating gate MOSFET transistor voltage status is displayed at its corresponding position on the display screen (13).

2. The portable flash memory mobile semiconductor memory according to claim 1, characterized in that: The memory body (1) is provided with a tail buckle ring (101) at one end away from the USB interface.

3. A portable flash memory mobile semiconductor memory according to claim 2, characterized in that: The front side of the cover (2) is provided with a metal strip (21), and one end of the tail buckle ring (101) is provided with a magnetic strip having the same shape as the metal strip (21).

4. The portable flash memory mobile semiconductor memory according to claim 1, characterized in that: Anti-slip strips (102) made of TPR thermoplastic rubber material are provided on both sides of the storage body (1).

5. The portable flash memory mobile semiconductor memory according to claim 4, characterized in that: Both sides of the storage body (1) are provided with exhaust ports (103) at upper and lower positions of the anti-slip strip (102).

Images