Half-bridge module
By distributing the chip on the substrate of the SiC module and setting a heat dissipation pillar covering the chip on the heat dissipation board, the problem of insufficient working junction temperature in the HPD packaging process of the SiC module is solved, significantly improving the heat dissipation performance and system stability.
Patent Information
- Application Number
- CN202421341015.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-12
- Publication Date
- 2025-03-25
- Estimated Expiration
- 2034-06-12
AI Technical Summary
The working junction temperature of SiC modules in HPD packaging processes may be limited by the packaging materials and structures, and cannot fully utilize their high-temperature working capabilities, resulting in reduced performance, shortened life and potential damage.
A half-bridge module is designed to improve heat dissipation efficiency by distributing chips on the substrate and fixing a heat dissipation plate at the other end of the substrate, and a heat dissipation pillar is arranged in the heat dissipation plate, and the projection area of the heat dissipation pillar covers the chip to improve heat dissipation efficiency.
Through this layout, the heat generation of the chip is fully derived by the heat dissipation pillars and water flow, which significantly improves the heat dissipation performance of the system, extends the life of the chip, enhances the stability of the system, optimizes space utilization and reduces thermal resistance.
Smart Images
Figure CN222673041U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a half-bridge module. Background Art
[0002] The half-bridge module is a circuit module widely used in the field of power electronics. The SiC single-sided half-bridge module is a power electronic device made of silicon carbide (SiC) material. It has unique performance advantages and is widely used in power conversion systems, new energy power generation, electric vehicles, industrial power systems, aerospace and other fields.
[0003] With the widespread application of SiC materials in the field of power electronics, HPD (high performance display) packaging technology is used to package SiC modules. However, major companies have found in actual applications that the HPD packaging process has some challenges in giving full play to the maximum advantages of SiC materials, such as operating junction temperature. SiC materials themselves have excellent high-temperature performance, but in the HPD packaging process, the operating junction temperature of SiC modules may be limited by the packaging materials and structures, and cannot fully exert its high-temperature working ability.
[0004] The operating junction temperature refers to the internal temperature of semiconductor devices (such as diodes, transistors, integrated circuits, etc.) during normal operation. This temperature is due to the power consumption generated by the device during operation, which is dissipated into the environment through thermal resistance and then accumulated inside the device. For power electronic devices such as SiC modules, a large amount of heat will be generated due to their operation in a high voltage and high current environment. If the heat dissipation is poor, resulting in an excessively high operating junction temperature, the device may suffer performance degradation, shortened life, or even damage. Therefore, reducing the operating junction temperature of the SiC module and improving its heat dissipation performance are key issues to consider when designing and manufacturing SiC modules. Utility Model Content
[0005] In view of the problems existing in the above-mentioned prior art, the utility model provides a half-bridge module, which can effectively solve the problems existing in the above-mentioned prior art.
[0006] The technical solution of the utility model is:
[0007] According to one aspect of the utility model, it includes: a substrate, a plurality of chips are distributed on one end of the substrate, a heat sink is fixedly provided on the other end of the substrate, a plurality of heat sink pillars are arranged and distributed inside the heat sink, and the projection areas of the plurality of heat sink pillars cover at least one chip.
[0008] Furthermore, the projection areas of the plurality of heat dissipation pillars cover all the chips.
[0009] Furthermore, the substrate includes a first metal area, a second metal area and a third metal area; two first metal arms are respectively provided at two ends of the first metal area extending along a first direction;
[0010] Two second metal arms are respectively provided at two ends of the second metal area extending along the second direction, and the two second metal arms are provided between the two first metal arms;
[0011] The third metal region is disposed between the first metal region and the second metal region, one end of the third metal region is extended along the first direction, and the third metal region is disposed between two second metal arms.
[0012] Furthermore, several of the chips are symmetrically arranged on the two first metal arms along the first direction; several of the chips are symmetrically arranged on the two second metal arms along the first direction, and the chips located on the first metal arms and the chips located on the second metal arms are also staggered in the first direction.
[0013] Furthermore, it also includes a second bonding wire, and the chip located on the first metal arm is connected to the second metal arm through the second bonding wire;
[0014] The chip located on the second metal arm is connected to the third metal region through a second bonding wire.
[0015] Furthermore, it also includes a first bonding wire, and the two ends of the second metal arm are connected by the first bonding wire.
[0016] Furthermore, a solder layer is fixedly provided between the substrate and the heat dissipation plate.
[0017] By adopting the above technical solution, the utility model has the following beneficial effects compared with the prior art:
[0018] This solution arranges the chip position so that the chip is located within the area covered by the heat dissipation pillars. During the water cooling process, the heat generated by the chip is fully discharged by the heat dissipation pillars and water flow, which can significantly improve the system's heat dissipation performance, improve chip performance, extend chip life, enhance system stability, optimize space utilization and reduce thermal resistance, thereby ensuring stable operation of the system. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the embodiments of the utility model or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0020] Figure 1The planar structure of the utility model is shown in FIG. Figure 1 ;
[0021] Figure 2 This is a schematic diagram of the planar structure of the substrate in the utility model;
[0022] Figure 3 The planar structure of the utility model is shown in FIG. Figure 2 ;
[0023] Figure 4 It is a three-dimensional structural schematic diagram of the utility model;
[0024] In the figure: substrate-1, first metal area-11, first metal arm-111, second metal area-12, second metal arm-121, third metal area-13, chip-2, lead frame-3, first bonding wire-4, heat sink-5, heat dissipation pillar-51, solder layer-6, second bonding wire-7, first direction-N, second direction-S. DETAILED DESCRIPTION
[0025] The present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It is particularly noted that the following embodiments are only used to illustrate the present invention, but do not limit the scope of the present invention. Similarly, the following embodiments are only partial embodiments of the present invention rather than all embodiments. All other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0026] like Figures 1 to 4 As shown, this solution provides a half-bridge module.
[0027] See also Figure 1 and Figure 2 , including: substrate 1, preferably, substrate 1 is an AMB insulating ceramic substrate (silicon nitride, aluminum nitride, etc.), with copper cladding on both sides for module circuit etching, and ceramic material in the middle for insulation. Substrate 1 includes a first metal area 11, a second metal area 12 and a third metal area 13; two first metal arms 111 are respectively provided at both ends of the first metal area 11 extending along the first direction N; two second metal arms 121 are respectively provided at both ends of the second metal area 12 extending along the second direction S, and the two second metal arms 121 are provided between the two first metal arms 111; the third metal area 13 is provided between the first metal area 11 and the second metal area 12, one end of the third metal area 13 is extended along the first direction N, and the third metal area 13 is provided between the two second metal arms 121.
[0028] See also Figure 1 and Figure 2, a plurality of chips 2 are distributed at one end of the substrate 1. Preferably, the chips 2 are third-generation wide bandgap semiconductor chips. The plurality of chips 2 are symmetrically arranged on the two first metal arms 111 along the first direction N; the plurality of chips 2 are symmetrically arranged on the two second metal arms 121 along the first direction N, and the chips 2 on the first metal arms 111 and the chips 2 on the second metal arms 121 are also staggered in the first direction N. Specifically, there are sixteen chips 2, which are equally distributed on the two first metal arms 111 and the two second metal arms 121.
[0029] A plurality of lead frames 3 are fixedly disposed on both sides of the upper end surface of the substrate 1. The lead frames 3 serve as electrical terminals to lead out the electrical properties of the module and connect to the outside world.
[0030] See also Figure 1 , further comprising a first bonding wire 4 and a second bonding wire 7, the first bonding wire 4 and the second bonding wire 7 are used for electrical connection between chips, the chip 2 located on the first metal arm 111 is connected to the second metal arm 121 through the second bonding wire 7; the chip 2 located on the second metal arm 121 is connected to the third metal area 13 through the second bonding wire 7. The two ends of the second metal arm 121 are connected through the first bonding wire 4, which improves the external bridge source potential difference problem, optimizes its switching characteristics, and ensures the consistency of the switching performance of the chip 2.
[0031] See also Figure 1 and Figure 4 , a heat sink 5 is fixedly arranged at the other end of the substrate 1, and a plurality of heat sink pillars 51 are arranged and distributed in the heat sink 5, and the projection area of the plurality of heat sink pillars 51 covers at least one chip 2; in this embodiment, the projection area of the plurality of heat sink pillars 51 covers all chips 2. The heat sink 5 is used to transfer the heat of the module to the outside. In this embodiment, the plurality of chips 2 are all located in the Pin-fin area of the heat sink pillar 51. During the water cooling process, the heat generated by the chip 2 is fully conducted away by the Pin-fin of the heat sink pillar 51 and the water flow.
[0032] See also Figure 3 A solder layer 6 is fixed between the substrate 1 and the heat sink 5 .
[0033] In this embodiment, the surface of the half-bridge module is sealed with epoxy resin (not shown).
[0034] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims
1. A half-bridge module, comprising: A substrate (1), wherein a plurality of chips (2) are distributed at one end of the substrate (1), and wherein a heat sink (5) is fixedly provided at the other end of the substrate (1), wherein a plurality of heat sink pillars (51) are arranged and distributed inside the heat sink (5), and the projection areas of the plurality of heat sink pillars (51) cover at least one chip (2).
2. A half-bridge module as claimed in claim 1, characterized in that: The projection areas of the plurality of heat dissipation pillars (51) cover all the chips (2).
3. A half-bridge module as claimed in claim 1, characterized in that: The substrate (1) comprises a first metal area (11), a second metal area (12) and a third metal area (13); two first metal arms (111) are respectively provided at two ends of the first metal area (11) extending along a first direction (N); Two second metal arms (121) are respectively provided at two ends of the second metal area (12) extending along the second direction (S), and the two second metal arms (121) are provided between the two first metal arms (111); The third metal region (13) is arranged between the first metal region (11) and the second metal region (12), one end of the third metal region (13) is extended along the first direction (N), and the third metal region (13) is arranged between two second metal arms (121).
4. A half-bridge module as claimed in claim 3, characterized in that: A plurality of the chips (2) are symmetrically arranged on two first metal arms (111) along a first direction (N); a plurality of the chips (2) are symmetrically arranged on two second metal arms (121) along the first direction (N), and the chips (2) located on the first metal arms (111) and the chips (2) located on the second metal arms (121) are also staggered in the first direction (N).
5. A half-bridge module as claimed in claim 4, characterized in that: It also includes a second bonding wire (7), and the chip (2) located on the first metal arm (111) is connected to the second metal arm (121) via the second bonding wire (7); The chip (2) located on the second metal arm (121) is connected to the third metal region (13) via a second bonding wire (7).
6. A half-bridge module as claimed in claim 3, characterized in that: It also includes a first bonding wire (4), and the two ends of the second metal arm (121) are connected via the first bonding wire (4).
7. A half-bridge module as claimed in claim 1, characterized in that: A solder layer (6) is fixedly provided between the substrate (1) and the heat dissipation plate (5).