Vacuum treatment equipment
By using a reasonable layout of substrate rack, plasma generation components and sputtering devices in the vacuum treatment equipment, the problems of poor plasma uniformity and low energy utilization are solved, and the uniformity and efficiency of large-area vacuum treatment are achieved.
Patent Information
- Application Number
- CN202422398519.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-30
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2034-09-30
AI Technical Summary
The existing vacuum treatment equipment has poor plasma uniformity and low energy utilization during large-area treatment, which limits its application in the field of large-area vacuum treatment.
Vacuum processing equipment is adopted, including a rotating substrate rack, multiple plasma generation components and sputtering devices. Through the reasonable layout of plasma generation components and sputtering devices, the plasma and coating materials are ensured to be uniformly distributed, and a low-pressure environment is maintained through the vacuum evacuation device.
It improves the uniformity of plasma and coating materials, reduces energy waste, improves energy utilization, and enhances the uniformity and efficiency of vacuum treatment.
Smart Images
Figure CN223087892U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of vacuum treatment, in particular to a vacuum treatment device. Background Art
[0002] Vacuum treatment devices are a class of devices used for various process treatments in a vacuum environment, and their application scope is extensive, including but not limited to vacuum coating devices and vacuum etching devices. Currently, a vacuum treatment device may be provided with an inductively coupled plasma source. The discharge coil of the inductively coupled plasma source generates an alternating electric field in the vacuum chamber through a quartz material, so that free electrons in the vacuum chamber collide with gas molecules under the action of the electric field to trigger an electron avalanche, and then gas discharge and plasma generation occur.
[0003] In the prior art, an inductively coupled plasma source with a coiled discharge coil can be arranged circumferentially in a vacuum treatment chamber to perform plasma treatment on a substrate. In the application scenario of vacuum treating a large substrate, the vacuum treatment effect on the substrate is often ensured by increasing the length of the coiled discharge coil. However, increasing the length of the coiled discharge coil is often difficult to achieve a high plasma density distribution uniformity, which is not conducive to achieving the consistency of the vacuum treatment effect, and thus limits its application in the field of large-area vacuum treatment. Summary of the Utility Model
[0004] The purpose of the utility model is to provide a vacuum treatment device to solve the technical problems such as poor plasma uniformity and low energy utilization rate in the existing vacuum treatment device, which in turn limits its application in the field of large-area vacuum treatment.
[0005] To achieve the above object, the utility model adopts the following technical solutions:
[0006] The utility model provides a vacuum treatment device, including:
[0007] A vacuum treatment chamber, in which a substrate holder is rotatably arranged, and the substrate holder is used for placing a substrate to be processed;
[0008] A plasma generating device, the plasma generating device includes at least two plasma generating components arranged in the vacuum treatment chamber, and at least two of the plasma generating components are arranged at intervals circumferentially around the vacuum treatment chamber, and are used for sending plasma to the substrate to be processed to form a first treatment area;
[0009] A sputtering device, the sputtering device is arranged at an interval from the plasma generating device, and the sputtering device is used for sending a coating material to the substrate to be processed to form a second treatment area;
[0010] A vacuum pumping device for pumping the vacuum processing chamber.
[0011] As an alternative to the above vacuum processing equipment, the plasma generating assembly includes an excitation source, a discharge electrode, and a dielectric tube. The excitation source is electrically connected to the discharge electrode; the dielectric tube is sleeved outside the discharge electrode for isolating the discharge electrode from the outside of the vacuum processing chamber.
[0012] As an alternative to the above vacuum processing equipment, the minimum distance from the outer surface of each dielectric tube to the outer surface of the substrate to be processed is equal.
[0013] As an alternative to the above vacuum processing equipment, the discharge electrode is a linear conductive rod, and the linear conductive rod is parallel to the axial direction of the rotation axis of the substrate holder.
[0014] As an alternative to the above vacuum processing equipment, the plasma generating assembly further includes a matcher, and the matcher is electrically connected between the excitation source and the discharge electrode.
[0015] As an alternative to the above vacuum processing equipment, the plasma generating device further includes a process gas pipe assembly, and the process gas pipe assembly is arranged in the vacuum processing chamber; the process gas pipe assembly is used to provide working gas for the plasma generating assembly to form the plasma.
[0016] As an alternative to the above vacuum processing equipment, the jet direction of the process gas pipe assembly is perpendicular to the connection line between the center of the plasma generating assembly and the center of the vacuum processing chamber.
[0017] As an alternative to the above vacuum processing equipment, the vacuum pumping device is arranged between the plasma generating device and the sputtering device.
[0018] As an alternative to the above vacuum processing equipment, there are at least two vacuum pumping devices, and at least two vacuum pumping devices are respectively located on opposite sides of the plasma generating device.
[0019] As an alternative to the above vacuum processing equipment, the vacuum processing equipment further includes a first transport chamber, a first transfer device, a second transport chamber, and a second transfer device. The first transfer device is used to transfer the substrate to be processed in the first transport chamber to the vacuum processing chamber; the second transfer device is used to transfer the processed substrate in the vacuum processing chamber to the second transport chamber.
[0020] The beneficial effects of the present utility model are:
[0021] The vacuum processing equipment includes a vacuum processing chamber, a plasma generating device, a sputtering device, and a vacuum pumping device. A substrate holder is rotatably arranged in the vacuum processing chamber. The substrate holder is used to place the substrate to be processed, so that the substrate to be processed can rotate with the substrate holder, enabling the substrate to be processed to face different circumferential parts of the vacuum processing chamber. The plasma generating device includes at least two plasma generating components arranged in the vacuum processing chamber. The at least two plasma generating components are arranged at intervals around the circumference of the vacuum processing chamber and are used to send plasma to the substrate to be processed to form a first processing area. The sputtering device is arranged at an interval from the plasma generating device. The sputtering device is used to send coating materials to the substrate to be processed to form a second processing area. Thus, when the substrate to be processed rotates and faces the first processing area, the at least two plasma generating components enable the plasma to act uniformly on the substrate to be processed. When the substrate to be processed rotates and faces the second processing area, the coating materials can also be uniformly deposited on the substrate to be processed, thereby improving the uniformity of the vacuum processing effect, reducing the waste of plasma energy, and improving the energy utilization rate. At the same time, the vacuum pumping device is used to pump the vacuum processing chamber to maintain the vacuum processing chamber in a predetermined low-pressure environment. Description of the Drawings
[0022] Figure 1 Structural schematic diagram of the vacuum processing equipment provided by an embodiment of the present invention;
[0023] Figure 2 Structural schematic diagram of part of the vacuum processing equipment provided by an embodiment of the present invention.
[0024] In the figure:
[0025] 1. Vacuum processing chamber; 11. Substrate holder; 12. First processing area; 13. Second processing area; 2. Plasma generating device; 21. Installation frame; 22. Plasma generating component; 221. Discharge electrode; 222. Dielectric tube; 23. Process gas pipe assembly; 3. Sputtering device; 4. Vacuum pumping device; 5. First transportation chamber; 6. First transfer device; 7. Second transportation chamber; 8. Second transfer device. Detailed Embodiment
[0026] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.
[0027] In the description of the present utility model, it should be noted that the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation to the present utility model. In addition, terms such as "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance. Among them, the terms "first position" and "second position" are two different positions. Moreover, the first feature being "above", "over" and "on" the second feature includes the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly below and obliquely below the second feature, or merely indicating that the first feature has a lower horizontal height than the second feature.
[0028] In the description of the present utility model, it should be noted that unless otherwise clearly specified and defined, the terms "installed", "connected" and "coupled" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0029] The embodiments of the present utility model will be described in detail below. The examples of the embodiments are shown in the drawings, in which the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions from beginning to end. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present utility model and cannot be construed as a limitation to the present utility model.
[0030] As Figure 1 and Figure 2 shown, this embodiment provides a vacuum processing device for surface-treating a substrate to be processed.
[0031] The vacuum processing device includes a vacuum processing chamber 1, a plasma generating device 2, a sputtering device 3, and a vacuum pumping device 4. A substrate holder 11 is rotatably provided in the vacuum processing chamber 1. The substrate holder 11 is used to place the substrate to be processed, so that the substrate to be processed can rotate with the substrate holder 11, enabling the substrate to be processed to face different circumferential parts of the vacuum processing chamber 1.
[0032] The plasma generating device 2 includes at least two plasma generating components 22 disposed in the vacuum processing chamber 1. The at least two plasma generating components 22 are circumferentially spaced apart around the vacuum processing chamber 1 and are used to send plasma to the substrate to be processed to form a first processing area 12. The sputtering device 3 is spaced apart from the plasma generating device 2. The sputtering device 3 is used to send coating material to the substrate to be processed to form a second processing area 13. Thus, when the substrate to be processed rotates and faces the first processing area 12, the at least two plasma generating components 22 are circumferentially spaced apart in the vacuum processing chamber 1 so that the plasma can act on the substrate to be processed evenly. When the substrate to be processed rotates and faces the second processing area 13, the coating material can also be deposited on the substrate to be processed evenly. In this way, the uniformity of the vacuum processing effect is improved, the waste of plasma energy is reduced, and the energy utilization rate is increased. Specifically, the uniformity of the foregoing plasma processing and coating material deposition includes at least lateral uniformity, that is, the uniformity in the direction along which the substrate to be processed rotates around the rotation axis of the substrate holder 11. It can be understood that the at least two plasma generating components 22 are circumferentially spaced apart around the vacuum processing chamber 1, that is, the plasma generating components 22 are circumferentially spaced apart around the rotation axis of the substrate holder 11.
[0033] Specifically, both the plasma generating device 2 and the sputtering device 3 are located on the outer periphery of the vacuum processing chamber 1. Optionally, the substrate holder 11 has a negative bias voltage. By controlling the magnitude of the negative bias voltage, the magnitude of the plasma acting on the substrate to be processed can be controlled. Further optionally, the substrate holder 11 can also be floating in potential.
[0034] Meanwhile, the vacuum pumping device 4 is used to pump the vacuum processing chamber 1 to maintain the vacuum processing chamber 1 in a low-pressure environment. Optionally, the vacuum pumping device 4 is disposed between the plasma generating device 2 and the sputtering device 3 to block the gas exchange between the first processing area 12 and the second processing area 13 through vacuum pumping, prevent interference between the first processing area 12 and the second processing area 13, and further improve the lateral uniformity of the plasma. Further optionally, there are at least two vacuum pumping devices 4, and the at least two vacuum pumping devices 4 are respectively located on opposite sides of the plasma generating device 2 to further improve the blocking ability for the first processing area 12 and the second processing area 13.
[0035] Furthermore, the plasma generating device 2 further includes a process gas pipe assembly 23 disposed on the vacuum processing chamber 1. The process gas pipe assembly 23 is used to supply working gas to the plasma generating assembly 22 to form plasma. Meanwhile, by adjusting the gas flow rate blown by the process gas pipe assembly 23, the size of the plasma treatment received on the substrate to be processed can also be controlled. Optionally, the plasma generating assembly 22 and the process gas pipe assembly 23 are disposed on the inner side wall of the vacuum processing chamber 1. Optionally, the jetting direction of the process gas pipe assembly 23 is perpendicular to the line connecting the center of the plasma generating assembly 22 and the center of the vacuum processing chamber 1, thereby improving the uniformity of the plasma diffusion in the vacuum processing chamber 1. As Figure 2 shown, optionally, there are two plasma generating assemblies 22, which are respectively located on both sides of the working gas pipe assembly 23.
[0036] Furthermore, the plasma generating assembly 22 includes an excitation source, a discharge electrode 221, and a dielectric tube 222. The excitation source is electrically connected to the discharge electrode 221. The dielectric tube 222 is sleeved outside the discharge electrode 221 and is used to isolate the discharge electrode 221 from the outside of the vacuum processing chamber 1. Thus, the alternating magnetic field induced by the discharge electrode 221 can induce an alternating electric field in the vacuum processing chamber 1 after passing through the dielectric tube 222, so that the free electrons are accelerated by the alternating electric field and collide with gas molecules to trigger ionization, generating self-sustained glow discharge and generating plasma. Among them, by adjusting the output power of the excitation source, the size of the plasma treatment received on the substrate to be processed can also be controlled. Optionally, an installation frame 21 is further provided outside the vacuum processing chamber 1, and the excitation source is disposed on the installation frame 21. Further optionally, the plasma generating assembly is an inductively coupled plasma source, the excitation source is a radio frequency power supply, and the dielectric tube 222 is a quartz tube.
[0037] Among them, the discharge electrode 221 is a linear conductive rod, and the linear conductive rod is parallel to the axial direction of the rotation axis of the substrate holder 11, so that the linear conductive rod can generate plasma with uniform density in the longitudinal direction, so that the plasma can act uniformly on the substrate to be processed in the longitudinal direction. It can be understood that the longitudinal direction here refers to the axial direction of the rotation axis of the substrate holder 11. By using the linear conductive rod to improve the longitudinal uniformity of the plasma treatment, therefore, when the longitudinal height of the vacuum processing chamber 1 is certain, a larger effective action range of the plasma treatment can be obtained, which is beneficial to the vacuum processing of large substrates. Preferably, the linear conductive rod is a straight conductive rod. It can be understood that the material of the linear conductive rod can be copper.
[0038] Meanwhile, the minimum distance from the outer surface of each dielectric tube 222 to the outer surface of the substrate to be processed is equal. Thus, by controlling the distance from the outer surface of each dielectric tube 222 to the outer surface of the substrate to be processed, the size of the plasma treatment received on the substrate to be processed can also be controlled.
[0039] Further, the plasma generating assembly 22 further includes a matcher, which is electrically connected between the excitation source and the discharge electrode 221 to optimize the energy transfer efficiency and reduce energy loss. Optionally, when the excitation source is a radio frequency power supply, the matcher is a radio frequency matcher at this time. Among them, if multiple discharge electrodes 221 are arranged in parallel, when the distance between adjacent two discharge electrodes 221 is relatively large, only one excitation source can be provided. When the distance between adjacent two discharge electrodes 221 is relatively small, the current directions of adjacent discharge electrodes 221 need to be set in opposite directions, that is, multiple excitation sources need to be correspondingly provided.
[0040] Further, the vacuum processing device further includes a cryogenic refrigeration device, which is arranged in the vacuum processing chamber 1 to improve the vacuum performance of the vacuum processing chamber 1 through the cryogenic refrigeration device and enhance the surface treatment effect on the substrate to be processed.
[0041] Optionally, the plasma generating assembly 22 is coated with a vacuum side guard plate assembly on the side facing the vacuum to prevent electrons in the plasma from directly escaping through the mounting frame 21 or the side wall of the vacuum processing chamber 1, resulting in unstable glow discharge or even inability to sustain self-discharge. The vacuum side guard plate assembly can be made by methods such as spraying ceramics on the surface of a stainless steel guard plate and anodizing the surface of an aluminum guard plate.
[0042] Further, the vacuum processing device further includes a first transport chamber 5, a first transfer device 6, a second transport chamber 7 and a second transfer device 8. The first transfer device 6 is used to transfer the substrate to be processed in the first transport chamber 5 into the vacuum processing chamber 1, and the second transfer device 8 is used to transfer the processed substrate in the vacuum processing chamber 1 into the second transport chamber 7. Thus, through the settings of the first transport chamber 5, the first transfer device 6, the second transport chamber 7 and the second transfer device 8, the automation of substrate handling can be realized, thereby improving the surface treatment rate of the substrate to be processed and ensuring the safety of the staff at the same time. Optionally, the first transfer device 6 is located on the first transport chamber 5 or between the first transport chamber 5 and the vacuum processing chamber 1, and the second transfer device 8 is located on the second transport chamber 7 or between the second transport chamber 7 and the vacuum processing chamber 1.
[0043] Obviously, the above-mentioned embodiments of the present invention are merely examples for clearly explaining the present invention, rather than limitations on the implementation manners of the present invention. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation manners here. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the claims of the present invention.
Claims
1. A vacuum treatment device, characterized in that, Comprising: A vacuum processing chamber (1), in which a substrate holder (11) is rotatably arranged, and the substrate holder (11) is used for placing the substrate to be processed; A plasma generating device (2), the plasma generating device (2) includes at least two plasma generating components (22) arranged in the vacuum processing chamber (1), and at least two of the plasma generating components (22) are arranged at intervals along the circumferential direction of the vacuum processing chamber (1) for sending plasma to the substrate to be processed to form a first processing area (12); A sputtering device (3), the sputtering device (3) is arranged at an interval from the plasma generating device (2), and the sputtering device (3) is used for sending coating material to the substrate to be processed to form a second processing area (13); A vacuum pumping device (4) for pumping the vacuum processing chamber (1) to a vacuum.
2. The vacuum treatment device according to claim 1, characterized in that, The plasma generating component (22) includes an excitation source, a discharge electrode (221) and a dielectric tube (222), and the excitation source is electrically connected to the discharge electrode (221); the dielectric tube (222) is sleeved outside the discharge electrode (221) for isolating the discharge electrode (221) from the outside of the vacuum processing chamber (1).
3. The vacuum processing equipment according to claim 2, wherein The minimum distance from the outer surface of each dielectric tube (222) to the outer surface of the substrate to be processed is equal.
4. The vacuum processing equipment according to claim 2, characterized in that The discharge electrode (221) is a linear conductive rod, and the linear conductive rod is parallel to the axial direction of the rotation axis of the substrate holder (11).
5. The vacuum processing equipment according to claim 2, characterized in that, The plasma generating component (22) further includes a matcher, and the matcher is electrically connected between the excitation source and the discharge electrode (221).
6. The vacuum processing apparatus according to claim 1, wherein The plasma generating device (2) further includes a process gas pipe assembly (23), and the process gas pipe assembly (23) is arranged in the vacuum processing chamber (1); the process gas pipe assembly (23) is used for providing working gas for the plasma generating component (22) to form the plasma.
7. The vacuum processing apparatus according to claim 6, wherein The jetting direction of the process gas pipe assembly (23) is perpendicular to the connection line between the center of the plasma generating component (22) and the center of the vacuum processing chamber (1).
8. The vacuum treatment device according to claim 1, characterized in that, The vacuum pumping device (4) is arranged between the plasma generating device (2) and the sputtering device (3).
9. The vacuum processing apparatus according to claim 8, wherein, There are at least two vacuum pumping devices (4), and at least two of the vacuum pumping devices (4) are respectively located on opposite sides of the plasma generating device (2).
10. The vacuum treatment equipment according to any one of claims 1 to 9, characterized in that, The vacuum processing equipment further includes a first transportation chamber (5), a first transfer device (6), a second transportation chamber (7) and a second transfer device (8), the first transfer device (6) is used for transferring the substrate to be processed in the first transportation chamber (5) into the vacuum processing chamber (1); the second transfer device (8) is used for transferring the processed substrate in the vacuum processing chamber (1) into the second transportation chamber (7).