Wafer bearing disc capable of generating uniform temperature distribution
The crystal wafer carrier with a multi-porous unit addresses the challenge of temperature uniformity in deposition processes, ensuring high-quality film formation by distributing gas evenly across the wafer surface without static clamps or rings.
Patent Information
- Application Number
- CN202422388786.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-29
- Publication Date
- 2025-07-15
- Estimated Expiration
- 2034-09-29
AI Technical Summary
Existing wafer bearing disks have unevenness in temperature distribution, affecting the quality of film deposition, and relying on electrostatic suction cups or fixing rings increases equipment complexity and cost.
The multi-porous unit design uses a support assembly and porous unit made of porous materials, providing uniform and stable heating or cooling gases, combining the protrusions and diffusion channels to ensure wafer temperature uniformity and keep the wafer stable without using electrostatic suction cups or fixing rings.
It realizes uniform distribution of wafer temperature, improves the quality of film deposition, simplifies the equipment structure, and reduces the difficulty and cost of production.
Smart Images
Figure CN223103069U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to a wafer carrier, in particular to a wafer carrier capable of generating a uniform temperature distribution. Background Art
[0002] Chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD) are all commonly used thin film deposition apparatuses and are widely used in the preparation processes of integrated circuits, light-emitting diodes, displays, etc.
[0003] The deposition apparatus mainly includes a cavity and a wafer carrier, where the wafer carrier is located in the cavity and is used to carry at least one wafer. Taking physical vapor deposition as an example, a target needs to be arranged in the cavity, and the target faces the wafer on the wafer carrier. During physical vapor deposition, an inert gas and / or a reactive gas can be delivered into the cavity, and a bias voltage is applied to the target and the wafer carrier respectively. The wafer carrier also controls the temperature of the carried wafer. The inert gas in the cavity will be ionized due to the action of a high-voltage electric field. The ionized inert gas will be attracted by the bias voltage on the target and bombard the target. The target atoms or molecules sputtered from the target will be attracted by the bias voltage on the wafer carrier and deposited on the surface of the heated wafer to form a thin film on the surface of the wafer.
[0004] Specifically, the stability and uniformity of the temperature generated by the wafer carrier will have a significant impact on the thin film deposition quality on the wafer surface. Therefore, how to make the wafer carrier generate a stable and uniform temperature is one of the important issues in the thin film deposition preparation process. Summary of the Utility Model
[0005] As described in the prior art, when performing the deposition preparation process, it is usually necessary to adjust the temperature of the wafer carrier to form a thin film with a uniform thickness on the surface of the wafer. Therefore, the utility model proposes a wafer carrier capable of generating a uniform temperature distribution, which mainly carries the wafer through a multi-porous unit. The multi-porous unit is made of a porous material and can provide uniform and stable heating gas or cooling gas to the carried wafer, making the temperature distribution of the wafer more uniform and facilitating the improvement of the quality of the preparation process.
[0006] An object of the utility model is to propose a wafer carrier capable of generating a uniform temperature distribution, where the multi-porous unit can provide uniformly distributed gas to the bottom surface of the wafer, avoiding the excessive concentration of gas in some areas of the bottom surface of the wafer and making the temperature distribution of each area of the wafer more uniform.
[0007] An object of the present utility model is to provide a wafer carrier capable of generating a uniform temperature distribution, wherein the airflow provided by the porous unit to the wafer is relatively uniform and gentle, which can prevent the gas provided by the porous unit from blowing the wafer and causing the wafer to displace relative to the wafer carrier.
[0008] In addition, the weight of the wafer and the gas pressure provided by the porous unit can be further calculated, so that the wafer can still be stably placed on the surface of the wafer carrier without using an electrostatic chuck or a fixing ring.
[0009] To achieve the above object, the present utility model provides a wafer carrier capable of generating a uniform temperature distribution, including: a support assembly, including: at least one groove provided on a top surface of the support assembly, wherein the groove includes at least one annular groove and at least one radial groove; an air inlet pipeline connected to the groove and used for delivering a gas to the groove located on the top surface; a porous unit having a plurality of pores and located on the top surface of the support assembly, including: a body; a plurality of protrusions located on a bearing surface of the body and used for bearing at least one wafer; and at least one diffusion channel between adjacent protrusions.
[0010] The present utility model provides another wafer carrier capable of generating a uniform temperature distribution, including: a support assembly, including: at least one groove provided on a top surface of the support assembly, wherein the groove includes at least one annular groove and at least one radial groove; an air inlet pipeline connected to the groove and used for delivering a gas to the groove located on the top surface; a porous unit used for bearing at least one wafer and located on the top surface of the support assembly, wherein the porous unit has a plurality of pores, including: a first diffusion region; and a second diffusion region located outside the first diffusion region, wherein the air permeability of the first diffusion region is different from that of the second diffusion region.
[0011] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the support assembly includes a base and a bearing unit, the bearing unit is provided on the base, and the groove is provided on the bearing unit.
[0012] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the bearing unit is a titanium plate, and the thermal conductivity of the porous unit is greater than that of the titanium plate.
[0013] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the area of the protrusion is between 30% and 70% of the area of the bearing surface of the body.
[0014] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the height of the protrusion is between 0.3 mm and 1 mm.
[0015] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the diameter of the protrusions is about between 6 mm and 10 mm, and the distance between adjacent protrusions is between 1 mm and 5 mm.
[0016] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the gas permeability of the first diffusion region is greater than that of the second diffusion region.
[0017] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the first diffusion region is disc-shaped, the second diffusion region is annular, and the second diffusion region is disposed around the first diffusion region.
[0018] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, a plurality of protrusions are provided in the first diffusion region and the second diffusion region, and at least one diffusion channel is formed between adjacent protrusions.
[0019] In at least one embodiment of the wafer carrier capable of generating a uniform temperature distribution, the first diffusion region and the second diffusion region are made of foamed metal, and the foaming time and foaming temperature for making the first diffusion region and the second diffusion region are different.
[0020] The present utility model provides a wafer carrier capable of generating a uniform temperature distribution, which can provide uniform and stable heating gas or cooling gas to the carried wafer, making the temperature distribution of the wafer more uniform and facilitating the improvement of the quality of the manufacturing process. Brief Description of the Drawings
[0021] The present utility model will be further described in detail below with reference to the drawings and specific embodiments.
[0022] Figure 1 It is a cross-sectional schematic view of an embodiment of the wafer carrier capable of generating a uniform temperature distribution according to the present utility model.
[0023] Figure 2 It is a three-dimensional exploded schematic view of an embodiment of the wafer carrier capable of generating a uniform temperature distribution according to the present utility model.
[0024] Figure 3 It is a three-dimensional exploded schematic view of another embodiment of the wafer carrier for providing a uniform temperature distribution according to the present utility model.
[0025] Description of the Reference Numerals
[0026] 10: Wafer carrier
[0027] 11: Support assembly
[0028] 111: Base
[0029] 112: Top surface
[0030] 113: Carrier unit
[0031] 12: Wafer
[0032] 13: Porous unit
[0033] 131: Body
[0034] 132: Bearing surface
[0035] 133: Protrusion
[0036] 135: Diffusion channel
[0037] 14: Groove
[0038] 141: Annular groove
[0039] 143: Radial groove
[0040] 15: Intake pipeline
[0041] 151: Branch pipeline
[0042] 161: Heating unit
[0043] 163: Cooling unit
[0044] 165: Bias electrode
[0045] 20: Wafer carrier
[0046] 23: Porous unit
[0047] 231: First diffusion region
[0048] 233: Second diffusion region. Detailed implementation manners
[0049] The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Many specific details are set forth in the following description in order to fully understand the present utility model, but the present utility model can also be implemented in other ways different from those described herein. Those skilled in the art can make similar promotions without departing from the connotation of the present utility model. Therefore, the present utility model is not limited by the specific embodiments disclosed below.
[0050] Please refer to Figure 1 and Figure 2, respectively, are a cross-sectional schematic view and a three-dimensional exploded schematic view of an embodiment of a wafer carrier capable of generating a uniform temperature distribution according to the present invention. As shown in the figure, the wafer carrier 10 is used to carry at least one wafer 12, and mainly includes a support assembly 11 and a porous unit 13. The support assembly 11 is used to connect the porous unit 13, and the porous unit 13 is used to carry at least one wafer 12.
[0051] In an embodiment of the present invention, the support assembly 11 includes a base 111 and a carrying unit 113, and the carrying unit 113 is disposed on the base 111. For example, the carrying unit 113 can be a titanium plate, and the carrying unit 113 can be fixed to the base 111 by a plurality of screws.
[0052] At least one groove 14 can be provided on a top surface 112 of the support assembly 11, such as Figure 2 As shown, at least one annular groove 141 and at least one radial groove 143 can be provided on the top surface 112 of the carrying unit 113 of the support assembly 11, and the annular groove 141 and the radial groove 143 are connected. For example, the carrying unit 113 of the support assembly 11 can be disc-shaped, and the annular groove 141 and the radial groove 143 are provided on the top surface 112 of the disc-shaped carrying unit 113.
[0053] At least one intake pipeline 15 can be provided inside the support assembly 11, and the intake pipeline 15 is connected to the groove 14 on the top surface 112 of the support assembly 11. For example, the intake pipeline 15 can be provided inside the base 111 and / or the carrying unit 113, and is connected to the groove 14 on the top surface 112 of the carrying unit 113.
[0054] In actual application, gas can be transported to the groove 14 of the support assembly 11 through the intake pipeline 15, so that the gas flows in the groove 14, and the gas can be an inert gas or a non-reactive gas. For example, cooling gas or heating gas can be transported to the annular groove 141 and the radial groove 143 of the groove 14 through the intake pipeline 15. In an embodiment of the present invention, at least one branch pipeline 151 can be provided inside the carrying unit 113, and the branch pipeline 151 is connected to the groove 14 on the carrying unit 113. When the carrying unit 113 is connected to the base 111, the branch pipeline 151 of the carrying unit 113 will be connected to the intake pipeline 15 of the base 111, so that the intake pipeline 15 can transport gas to the groove 14 through the branch pipeline 151.
[0055] Generally, the wafer 12 is directly placed on the top surface 112 of the support component 11. For example, the wafer 12 is placed on the top surface 112 of the carrier unit 113. When the gas is transported from the inlet pipeline 15 or the branch pipeline 151 to the groove 14, most of the gas usually blows directly towards the bottom of the wafer 12, and then flows along the groove 14 between the wafer 12 and the top surface 112 of the support component 11. The gas flowing in the groove 14 contacts the bottom surface of the wafer 12 and adjusts the temperature of the wafer 12 through heat conduction and heat convection.
[0056] However, the gas blown from the inlet pipeline 15 or the branch pipeline 151 towards the bottom surface of the wafer 12 will form an upward thrust on a local area of the wafer 12. When the thrust of the gas acting on the bottom surface of the wafer 12 is greater than the weight of the wafer 12 and the thrust of the gas applied on the top surface of the wafer 12, the wafer 12 will be blown away from the support component 11, resulting in the displacement of the wafer 12 relative to the support component 11.
[0057] To avoid the above problems, generally, an electrostatic chuck (e-chuck) is selected to be arranged in the support component 11, and the wafer 12 is adsorbed on the support component 11 by electrostatic means. Another way is to apply pressure to the upper surface of the wafer 12 through a clamp ring to fix the wafer 12 on the support component 11.
[0058] In actual applications, in addition to the inlet pipeline 15 and the branch pipeline 151 in the support component 11, structures such as a heating pipeline 161, a cooling pipeline 163, and / or a bias electrode 165 are usually arranged. Therefore, additionally arranging an electrostatic chuck in the support component 11 will undoubtedly increase the complexity of the structure of the wafer carrier 10, the manufacturing difficulty, and the setting cost. In addition, although the setting cost of the clamp ring is lower than that of the electrostatic chuck, the clamp ring directly applies pressure to the surface of the wafer 12 during use, which may cause damage to the wafer 12.
[0059] To increase the contact area between the gas in the groove 14 and the wafer 12, although the density of the grooves 14 arranged on the top surface 112 of the support component 11 can be increased to improve the temperature uniformity of the wafer 12. However, in actual applications, it is impossible to infinitely increase the density of the grooves 14 arranged on the top surface 112 of the support component 11. Therefore, the effect of improving the temperature uniformity of the wafer 12 by setting the grooves 14 still has certain limitations.
[0060] To this end, the present invention further proposes to set a porous unit 13 on the top surface 112 of the support component 11, and place the wafer 12 on the porous unit 13. The porous unit 13 has a plurality of pores and can be made of a porous material, such as ceramic, silicon carbide (SiC) or foamed metal, and the porous unit 13 is fixed to the top surface 112 of the support component 11 and / or the carrier unit 113 using screws.
[0061] The gas delivered to the groove 14 located on the top surface 112 by the inlet pipeline 15 and / or the branch pipeline 151 is transmitted to the bottom surface of the wafer 12 through the porous unit 13. The porous unit 13 is made of a porous material, wherein the gas in the inlet pipeline 15, the branch pipeline 151 and / or the groove 14 is transmitted to the supporting surface 132 of the porous unit 13 through the pores inside the porous unit 13, and is discharged from between the porous unit 13 and the wafer 12.
[0062] The porous unit 13 described in the embodiment of the present invention is made of a porous material and has an air permeability of 30% to 70%, so that the porous unit 13 can provide a uniformly distributed and moderately pressured gas to the bottom surface of the wafer 12. In contrast, if the gas is directly delivered to the wafer 12 through the air inlet line 15 and / or the branch line 151 of the support assembly 11, the gas will usually be sprayed to a specific area of the wafer 12. In this way, the local area of the wafer 12 will be subjected to greater pressure, causing the wafer 12 to shift relative to the wafer carrier 10, thereby requiring an additional electrostatic suction cup or fixing ring. In addition, the gas that is too concentrated in a specific area is not conducive to forming a uniform temperature distribution on the wafer 12, and will affect the quality of the subsequent deposition preparation process.
[0063] The utility model can reduce the excessive concentration of gas on a specific area of the wafer 12 by blowing uniform and gentle gas to the bottom surface of the wafer 12 through the porous unit 13, which is not only conducive to improving the temperature uniformity of the wafer 12, but also can prevent the gas from blowing the wafer 12 on the porous unit 13. Specifically, the force applied by the gas provided by the porous unit 13 to the bottom surface of the wafer 12 can be calculated from the weight of the wafer 12 and the force of the gas acting on the upper surface of the wafer 12. For example, the force applied by the gas output by the porous unit 13 to the bottom surface of the wafer 12 is less than the weight of the wafer 12, or less than the sum of the weight of the wafer 12 and the force of the gas acting on the upper surface of the wafer 12.
[0064] In this way, even without using an electrostatic chuck or a fixing ring, the wafer 12 can still be stably placed on the porous unit 13 of the wafer carrier 10 without displacement relative to the wafer carrier 10 and the porous unit 13. Without using an electrostatic chuck or a fixing ring, the manufacturing difficulty and cost of the wafer carrier 10 can be significantly reduced.
[0065] In an embodiment of the present invention, the porous unit 13 may include a body 131, a plurality of protrusions 133, and at least one diffusion channel 135. The shape of the body 131 may be similar to that of the support assembly 11 and / or the carrier unit 113. For example, the body 131 and the carrier unit 113 may be disc-shaped. The plurality of protrusions 133 are disposed on the bearing surface 132 of the body 131 and are used to carry the wafer 12. The protrusions 133 may be columnar protrusions of any geometric shape. For example, the protrusions 133 may be cylindrical protrusions. The plurality of protrusions 133 form at least one diffusion channel 135 on the bearing surface 132, and the diffusion channel 135 is located between adjacent protrusions 133. For example, the protrusions 133 and the diffusion channel 135 are both disposed on the bearing surface 132 of the body 131 of the porous unit 13.
[0066] Although the porous unit 13 is made of a porous material and has a plurality of pores, after the gas in the intake pipeline 15, the branch pipeline 151 of the support assembly 11 and / or the groove 14 is transmitted to the porous unit 13, the gas may initially accumulate in the porous unit 13. When the gas pressure in the porous unit 13 accumulates to a certain level, the gas will be discharged through the pores of the porous unit 13. At this time, the gas pressure ejected from the pores on the bearing surface 132 of the porous unit 13 is relatively large and may cause relative displacement between the wafer 12 and the porous unit 13.
[0067] Therefore, the present invention further provides protrusions 133 on the bearing surface 132 of the porous unit 13, so that when the gas accumulated in the porous unit 13 is discharged through the pores of the bearing surface 132 and / or the diffusion channel 135, it can be discharged through the diffusion channel 135 between the plurality of protrusions 133, so as to prevent the gas pressure accumulated in the porous unit 13 from directly acting on the bottom surface of the wafer 12 and is conducive to reducing the gas pressure accumulated between the porous unit 13 and the wafer 12. In addition, the protrusions 133 can further provide frictional force between the porous unit 13 and the wafer 12, which can effectively prevent the discharged gas from causing displacement of the wafer 12 relative to the porous unit 13.
[0068] In actual application, the thickness of the multi-porous unit 13 at the position where the protrusion 133 is provided is greater than the thickness where the diffusion channel 135 is provided. In theory, the gas accumulated in the multi-porous unit 13 may first be discharged through the pores on the diffusion channel 135, and then through the pores on the protrusion 133. In addition, the gas pressure discharged through the pores on the diffusion channel 135 is generally greater than the gas pressure discharged through the pores on the protrusion 133. Since there is a small gap between the diffusion channel 135 and the wafer 12, it is possible to prevent the gas with a relatively high pressure discharged from the diffusion channel 135 from directly acting on the bottom surface of the wafer 12, and it is beneficial to reduce the chance of the wafer 12 being displaced due to the pressure output by the multi-porous unit 13.
[0069] In an embodiment of the present invention, the total area of the protrusions 133 is about 30% to 70% of the bearing surface 132 of the main body 131 of the multi-porous unit 13. The height of the protrusions 133 is about 0.3 mm to 1 mm, the diameter of the protrusions 133 is about 6 mm to 10 mm, and the gap between adjacent protrusions 133 is about 1 mm to 5 mm. The ratio of the total area of the above-mentioned protrusions 133 to the bearing surface 132, the height, diameter and spacing of the protrusions 133 are only an embodiment of the present invention, and are not a limitation of the protection scope of the present invention.
[0070] In addition, when the gas in the multi-porous unit 13 is discharged from the bearing surface 132 or the diffusion channel 135, the wafer 12 still contacts the protrusions 133 of the multi-porous unit 13, so that there is a frictional force between the multi-porous unit 13 and the bottom surface of the wafer 12, and it can further prevent the wafer 12 from being displaced relative to the multi-porous unit 13.
[0071] In addition, a material with a relatively high thermal conductivity can be selected to make the multi-porous unit 13. The thermal conductivity of the multi-porous unit 13 can be greater than that of the bearing unit 113. For example, the bearing unit 113 of the support assembly 11 is usually a titanium disc, and its thermal conductivity is about 21.9 W / m*k, while the thermal conductivity of the multi-porous unit 13 made of silicon carbide (SiC) is about 120-270 W / m*k. The heat conduction effect of the multi-porous unit 13 is much higher than that of the bearing unit 113, and it can improve the efficiency of heating or cooling the wafer 12.
[0072] Based on the above description, by providing the porous unit 13 on the support component 11 and / or the bearing unit 113, a stable and uniform air flow can be provided to the wafer 12 through the porous unit 13, which is beneficial to improving the overall temperature uniformity of the wafer 12. In addition, by providing the convex portion 133 and the diffusion channel 135 on the bearing surface 132 of the porous unit 13 and adjusting the gas pressure provided by the porous unit 13 to the wafer 12, the wafer 12 can be stably placed on the porous unit 13 without using an electrostatic chuck or a fixing ring, which is beneficial to simplifying the structure and design difficulty of the wafer carrier 10 and reducing the manufacturing cost of the wafer carrier 10.
[0073] In an embodiment of the present invention, the wafer carrier 10 may be provided with at least one heating unit 161, at least one cooling unit 163 and / or at least one bias electrode 165. The heating unit 161 and the cooling unit 163 are respectively used to heat and cool the wafer 12 on the wafer carrier 10 to adjust the temperature of the wafer 12, while the bias electrode 165 is used to form a radio frequency (RF) bias. For example, the heating unit 161 may be a resistive heater, and the cooling unit 163 may be a pipeline with a cooling fluid inside. The heating unit 161 and the cooling unit 163 may be provided in the base 111 and heat or cool the wafer 12 through the base 111, the bearing unit 113 and / or the porous unit 13.
[0074] Please refer to Figure 3 , which is a perspective exploded view of another embodiment of the wafer carrier capable of generating a uniform temperature distribution according to the present invention. Please refer to Figure 1 and Figure 2 , the wafer carrier 20 is used to carry at least one wafer 12, and mainly includes a support component 11 and a porous unit 23. The support component 11 is used to connect the porous unit 23 and carry at least one wafer 12 through the porous unit 23.
[0075] At least one groove 14 may be provided on a top surface 112 of the support component 11. For example, the groove 14 includes at least one annular groove 141 and at least one radial groove 143, and the annular groove 141 and the radial groove 143 are connected. In addition, an air inlet pipeline 15 may be provided inside the support component 11 to connect the groove 14 and used to transport a gas to the groove 14 located on the top surface 112.
[0076] The porous unit 23 of the embodiment of the present invention has a plurality of pores and may be made of a porous material, such as ceramics, silicon carbide (SiC) or foamed metal, etc., and is connected to the top surface 112 of the support component 11. The porous unit 23 includes a first diffusion region 231 and a second diffusion region 233.
[0077] The first diffusion region 231 and the second diffusion region 233 of the porous unit 23 have different air permeabilities. The second diffusion region 233 is located outside the first diffusion region 231, and the air permeability of the first diffusion region 231 can be greater than that of the second diffusion region 233. For example, the first diffusion region 231 is disc-shaped, and the second diffusion region 233 is annular, and the second diffusion region 233 is arranged around the first diffusion region 231.
[0078] The fact that the air permeability of the first diffusion region 231 located inside is greater than that of the second diffusion region 233 is only one embodiment of the present invention and does not limit the protection scope of the present invention. In another embodiment of the present invention, according to actual needs, the air permeabilities of the first diffusion region 231 and the second diffusion region 233 can be adjusted so that the air permeability of the first diffusion region 231 located inside is less than that of the second diffusion region 233.
[0079] In one embodiment of the present invention, the first diffusion region 231 and the second diffusion region 233 can be made of the same material. For example, when the first diffusion region 231 and the second diffusion region 233 are foamed metals, the first diffusion region 231 and the second diffusion region 233 can be made respectively by different foaming temperatures and different foaming times, so that the first diffusion region 231 and the second diffusion region 233 have different air permeabilities. In different embodiments, the first diffusion region 231 and the second diffusion region 233 can be made of different materials with different air permeabilities.
[0080] In one embodiment of the present invention, the surfaces of the first diffusion region 231 and the second diffusion region 233 can be provided with Figure 2 a plurality of protrusions 133 as shown, and at least one diffusion channel 135 is formed between adjacent protrusions 133.
[0081] The above content is only a preferred embodiment of the present invention and is not used to limit the protection scope of the present invention. That is, all equal changes and modifications made according to the shape, structure, features and spirit of the scope of the present invention should be included in the protection scope of the present invention.
Claims
1. A wafer carrier capable of generating a uniform temperature distribution, characterized in that, Comprising: A support assembly, comprising: At least one groove disposed on a top surface of the support assembly, wherein the groove comprises at least one annular groove and at least one radial groove; An intake pipeline connected to the groove and configured to deliver a gas to the groove located on the top surface; A porous unit having a plurality of pores and located on the top surface of the support assembly, comprising: A body; A plurality of protrusions located on a bearing surface of the body and configured to bear at least one wafer; At least one diffusion channel between adjacent ones of the plurality of protrusions.
2. The wafer carrier capable of generating a uniform temperature distribution according to claim 1, wherein The support assembly includes a base and a bearing unit, the bearing unit is disposed on the base, and the groove is disposed on the bearing unit.
3. The wafer carrier capable of generating a uniform temperature distribution according to claim 2, wherein, The bearing unit is a titanium disk, and the thermal conductivity of the porous unit is greater than the thermal conductivity of the titanium disk.
4. The wafer carrier capable of generating a uniform temperature distribution according to claim 1, wherein The area of the protrusion is between 30% and 70% of the area of the bearing surface of the body.
5. The wafer carrier capable of generating a uniform temperature distribution according to claim 1, wherein The height of the protrusion is between 0.3 mm and 1 mm.
6. The wafer carrier capable of generating a uniform temperature distribution according to claim 5, wherein, The diameter of the protrusion is approximately between 6 mm and 10 mm, and the spacing between adjacent protrusions is between 1 mm and 5 mm.
7. A wafer carrier capable of generating a uniform temperature distribution, characterized in that, Comprising: A support assembly, comprising: At least one groove disposed on a top surface of the support assembly, wherein the groove comprises at least one annular groove and at least one radial groove; An intake pipeline connected to the groove and configured to deliver a gas to the groove located on the top surface; and A porous unit configured to bear at least one wafer and located on the top surface of the support assembly, wherein the porous unit has a plurality of pores, comprising: A first diffusion region; A second diffusion region located outside the first diffusion region, wherein the gas permeability of the first diffusion region is different from the gas permeability of the second diffusion region.
8. The wafer carrier capable of generating a uniform temperature distribution according to claim 7, wherein The gas permeability of the first diffusion region is greater than that of the second diffusion region.
9. The wafer carrier capable of generating a uniform temperature distribution according to claim 7, wherein The first diffusion region is disk-shaped, and the second diffusion region is annular, and the second diffusion region is disposed around the first diffusion region.
10. The wafer carrier capable of generating a uniform temperature distribution according to claim 7, characterized in that, Comprising a plurality of protrusions disposed on the first diffusion region and the second diffusion region, and at least one diffusion channel is formed between adjacent ones of the plurality of protrusions.