Wafer stage cleaning device and photoetching machine

Abstract

The utility model provides a wafer carrying table cleaning device and a photoetching machine table, and the wafer carrying table cleaning device comprises a cleaning head which is located above a bearing surface of a wafer carrying table and moves relative to the bearing surface; the cleaning head comprises a gas output unit used for outputting gas to enable pollutants to be separated from the bearing surface; and the negative pressure generating unit is used for generating negative pressure to suck pollutants.

Description

Technical Field

[0001] The utility model relates to the field of semiconductors, and in particular to a wafer stage cleaning device and a lithography machine stage. Background Art

[0002] In semiconductor processing equipment, a wafer stage is usually used to carry wafers to be processed. Pollutants on the wafer stage will affect the processing effect of the wafers. For a lithography machine stage, if there are pollutants on the bearing surface of the wafer stage, it will cause the surface of the supported wafer to bulge or tilt. During the exposure process, it will cause local patterns to be out of focus, resulting in distorted exposure patterns. During the multi-layer pattern exposure process, it will also cause misalignment between the current layer and the previous layer patterns, resulting in loss of yield. Summary of the Utility Model

[0003] The utility model provides a wafer stage cleaning device and a lithography machine stage.

[0004] In a first aspect, the utility model provides a wafer stage cleaning device, comprising:

[0005] A cleaning head, located above the bearing surface of the wafer stage and moving relative to the bearing surface;

[0006] The cleaning head comprises:

[0007] A gas output unit, configured to output gas to separate pollutants from the bearing surface;

[0008] A negative pressure generating unit, configured to generate negative pressure to suck in the pollutants.

[0009] In some embodiments, the gas output unit is further configured to adjust the output direction of the gas; wherein, the output direction is parallel to the bearing surface, or the included angle between the output direction and the bearing surface is less than 90 degrees.

[0010] In some embodiments, the wafer stage cleaning device further comprises:

[0011] A control unit, coupled to the gas output unit and the negative pressure generating unit; the control unit is configured to generate first control information and second control information;

[0012] The gas output unit is further configured to receive the first control information and adjust the output direction and output flow rate of the gas according to the first control information;

[0013] The negative pressure generating unit is further configured to receive the second control information and adjust the negative pressure according to the second control information.

[0014] In some embodiments, the wafer stage cleaning device further comprises:

[0015] A first detection unit, coupled to the control unit; the first detection unit is configured to detect the contamination condition of the bearing surface to generate first detection information;

[0016] The control unit is specifically configured to receive the first detection information and generate the first control information and the second control information according to the first detection information.

[0017] In some embodiments, the control unit is further configured to generate the first control information including a first moment and the second control information including a second moment according to the first detection information; wherein, the first moment is used to indicate the moment when the gas output unit starts to work, the second moment is used to indicate the moment when the negative pressure generating unit starts to work, and there is a time difference between the first moment and the second moment.

[0018] In some embodiments, the control unit is further configured to generate path information for the movement of the cleaning head according to the first detection information;

[0019] The wafer stage cleaning device further includes:

[0020] A driving unit, coupled to the control unit; the driving unit is configured to receive the path information and drive the cleaning head to move according to the path information.

[0021] In some embodiments, the wafer stage cleaning device further includes:

[0022] A second detection unit, disposed on the cleaning head and coupled to the control unit; the second detection unit is configured to detect the contamination condition of the cleaning area after the cleaning head finishes cleaning the cleaning area to generate second detection information; the cleaning area includes the projection area of the cleaning head on the bearing surface;

[0023] When the second detection information indicates that there is no such contaminant in the cleaning area, the control unit controls the cleaning head to stop cleaning the cleaning area;

[0024] When the second detection information indicates that there is such contaminant in the cleaning area, the control unit controls the cleaning head to clean the cleaning area again.

[0025] In some embodiments, the surface of the cleaning head facing the bearing surface includes an edge area and a central area, and the edge area surrounds the central area;

[0026] The cleaning head includes a plurality of the gas output units and a plurality of the negative pressure generating units; the plurality of gas output units are disposed in the edge region, and the plurality of negative pressure generating units are disposed in the central region.

[0027] In some embodiments, the wafer stage cleaning device further includes:

[0028] A protection structure disposed on a side of the cleaning head close to the bearing surface; the protection structure is configured to protect the bearing surface.

[0029] In a second aspect, the present invention provides a lithography machine stage including the wafer stage cleaning device according to any one of the above embodiments.

[0030] In the wafer stage cleaning device provided by the present invention, the cleaning head is located above the bearing surface and moves relative to the bearing surface. The gas output unit is configured to output gas to separate contaminants from the bearing surface, and the negative pressure generating unit is configured to generate negative pressure to suck in contaminants. Thus, on the one hand, the wafer stage cleaning device can remove contaminants on the bearing surface, reduce protrusions or inclinations on the surface of the wafer placed on the bearing surface, and improve the process yield; on the other hand, it can reduce problems such as wear, height change, and inclination of the bearing surface caused by contact between the cleaning device and the bearing surface during the cleaning process. Description of the Drawings

[0031] Figure 1 A schematic diagram of a wafer stage cleaning device provided by the present invention;

[0032] Figure 2 Another schematic diagram of a wafer stage cleaning device provided by the present invention;

[0033] Figure 3 A schematic diagram of a surface of the cleaning head facing the bearing surface provided by the present invention;

[0034] Figure 4 Another schematic diagram of a wafer stage cleaning device provided by the present invention. Detailed Embodiments

[0035] To facilitate understanding of the present invention, the exemplary embodiments of the present invention will be described in more detail below with reference to the relevant drawings. Although the exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the specific embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0036] In the following description, numerous specific details are given to provide a more thorough understanding of the present utility model. However, it will be apparent to those skilled in the art that the present utility model may be practiced without one or more of these details. In some embodiments, to avoid confusion with the present utility model, some well-known technical features are not described; that is, not all features of the actual embodiments may be described here, and the well-known functions and structures are not described in detail.

[0037] Generally, terms may be understood, at least in part, from their use in the context. For example, at least in part depending on the context, the term "one or more" as used herein may be used to describe any feature, structure, or property in a singular sense, or may be used to describe a combination of features, structures, or properties in a plural sense. Similarly, terms such as "a" or "the" may also be understood to convey a singular usage or a plural usage, at least in part depending on the context. Additionally, the term "based on" may be understood to not necessarily intend to convey an exclusive set of factors, and may alternatively allow for the existence of additional factors that are not necessarily explicitly described, which is also at least in part depending on the context.

[0038] Unless otherwise defined, the terms used herein are for the purpose of describing specific embodiments only and are not intended as a limitation of the present utility model. When used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term "and / or" includes any and all combinations of the related listed items.

[0039] To thoroughly understand the present utility model, detailed steps and detailed structures will be presented in the following description to illustrate the technical solution of the present utility model. The preferred embodiments of the present utility model are described in detail below. However, in addition to these detailed descriptions, the present utility model may also have other embodiments.

[0040] In some embodiments, a lithography machine stage may include a wafer stage and a wafer stage cleaning device. Among them, the wafer stage cleaning device contacts the bearing surface of the wafer stage through a cleaning stone to sweep the pollutants on the bearing surface by using the cleaning stone. However, cleaning the bearing surface with a cleaning stone may cause wear on the bearing surface, and the repair and replacement of the wafer stage are expensive and time-consuming. In other embodiments, in order to detect the quality of the bearing surface of the wafer stage, a level sensor may be used to detect the flatness of multiple wafers on the wafer stage, and the corresponding software may be used to fit the topography of the bearing surface. The most critical data is the edge roll off (ERO). However, this detection process takes several hours and is time-consuming.

[0041] As Figure 1 shown, the present utility model provides a wafer stage cleaning device 100, including:

[0042] A cleaning head 110, located above the bearing surface 201 of the wafer stage 200 and moving relative to the bearing surface 201;

[0043] The cleaning head 110 includes:

[0044] A gas output unit 111, configured to output gas to separate pollutants from the bearing surface 201;

[0045] A negative pressure generating unit 112, configured to generate negative pressure to suck in the pollutants.

[0046] In this embodiment, the cleaning head 110 is located above the wafer stage 200 and can move relative to the bearing surface 201. Exemplarily, the cleaning head 110 can move in a direction parallel to the bearing surface 201, can also move in a direction perpendicular to the bearing surface 201, or can move in a direction at a certain angle (such as 60 degrees, 45 degrees, etc.) with the bearing surface 201, so that the cleaning head 110 can accurately move to the position where the pollutants are located for cleaning. In some embodiments, the cleaning head 110 can be driven by a driving mechanism, such as a slide rail, a connecting rod, a robotic arm, etc. The cleaning head 110 includes a gas output unit 111 and a negative pressure generating unit 112. The gas output unit 111 is configured to output gas to generate an air flow to separate pollutants from the bearing surface 201, and the negative pressure generating unit 112 is configured to generate negative pressure to suck in the pollutants.

[0047] The airflow generated by the gas output unit 111 can directly act on the pollutants, that is, blow up the pollutants to make them separate from the carrying surface 201; the airflow generated by the gas output unit 111 can also pass through the top or side of the pollutants, so that the pressure above or on the side of the pollutants is reduced, that is, the pollutants are separated from the carrying surface 201 by using the Bernoulli principle. The gas output unit 111 can be implemented by one or more components such as fans, air pumps, pipes, valves, nozzles, etc. It should be noted that the fans, air pumps and other components can be located in the cleaning head 110, or can be arranged outside the cleaning head 110 and connected to the cleaning head 110 through pipes. The gas source of the gas output unit 111 includes but is not limited to compressed dry air (CDA), nitrogen or inert gas.

[0048] The negative pressure generating unit 112 can be implemented by one or more components of an air pump, a cavity, a pipe, a valve, a nozzle, etc. For example, an air pump is used to generate negative pressure in the cavity, so that pollutants separated from the carrying surface 201 are sucked in through the pipe and the nozzle. It should be noted that the air pump, the cavity, etc. components can be located in the cleaning head 110, or can be arranged outside the cleaning head 110 and connected to the cleaning head 110 through a pipe.

[0049] In some embodiments, when the mass of the pollutants is large and the adhesion of the pollutants is strong, the negative pressure generating unit 112 and the gas output unit 111 can work together, the gas output unit 111 makes the pollutants separate from the carrying surface 201, and the negative pressure generating unit 112 sucks the pollutants separated from the carrying surface 201; when the mass of the pollutants is small and the adhesion of the pollutants is weak, the negative pressure generating unit 112 can also work alone and directly suck the pollutants on the carrying surface 201. In other embodiments, the wafer stage cleaning device can also include a pollutant collection unit, in which case the gas output unit 111 can also work alone and blow the pollutants into the pollutant collection unit along a preset direction.

[0050] In this way, on the one hand, the wafer carrier cleaning device can remove contaminants on the carrying surface, reduce the protrusions or tilt of the surface of the wafer placed on the carrying surface, and improve the process yield; on the other hand, it can reduce the wear, height change and tilt of the carrying surface caused by the contact between the cleaning device and the carrying surface during the cleaning process.

[0051] In some embodiments, the gas output unit 111 is further used to adjust the output direction of the gas; wherein the output direction is parallel to the bearing surface, or the angle between the output direction and the bearing surface is less than 90 degrees.

[0052] In this embodiment, the gas output unit 111 can adjust the output direction of the gas. Exemplarily, the gas output unit 111 includes at least one component such as a movable nozzle, an adjustable air deflector, etc., so as to adjust the output direction of the gas. Specifically, the gas output unit 111 can make the output direction of the gas parallel to the bearing surface 201, and make the air flow pass above the pollutant. At this time, the upward buoyancy generated on the pollutant is the largest; the gas output unit 111 can also adjust the angle between the output direction of the gas and the bearing surface 201 according to the position of the pollutant, and this angle is less than 90 degrees (the output direction of the gas is not perpendicular to the bearing surface), so that the air flow directly acts on the pollutant to blow up the pollutant.

[0053] In some embodiments, as Figure 2 shown, the wafer stage cleaning device 100 further includes: a control unit 120, coupled to the gas output unit 111 and the negative pressure generating unit 112; the control unit 120 is configured to generate first control information and second control information; the gas output unit 111 is further configured to receive the first control information and adjust the output direction and output flow rate of the gas according to the first control information; the negative pressure generating unit 112 is further configured to receive the second control information and adjust the negative pressure according to the second control information.

[0054] In this embodiment, the wafer stage cleaning device 100 may include a control unit 120, and the control unit 120 may be implemented by a processor, a programmable logic device (PLD), a field programmable gate array (FPGA), a microcontroller (MCU), a microprocessor, or other electronic components.

[0055] The control unit 120 can be used to determine various operating parameters of the gas output unit 111 for outputting gas, such as output direction, output flow rate, opening and closing times, etc., so as to generate first control information and send the first control information to the gas output unit 111. The control unit 120 can also be used to determine various operating parameters of the negative pressure generating unit 112, such as negative pressure intensity, opening and closing times, etc., so as to generate second control information and send the second control information to the negative pressure generating unit 112. In this way, the gas output unit 111 can adjust the output direction and output flow rate of the gas according to the first control information, and the negative pressure generating unit 112 can adjust the negative pressure intensity according to the second control information. Exemplarily, the control unit 120 can determine the optimal operating parameters of the gas output unit 111 and the negative pressure generating unit 112, so as to save energy consumption on the premise of ensuring effective inhalation of pollutants, and reduce problems such as changes in the height or inclination of the bearing surface caused by excessive output flow rate of the gas or excessive negative pressure intensity.

[0056] In some embodiments, as Figure 2 shown, the wafer stage cleaning device 100 further includes: a first detection unit 130, coupled to the control unit 120; the first detection unit 130 is used to detect the contamination condition of the bearing surface 201 to generate first detection information; the control unit 120 is specifically configured to receive the first detection information and generate the first control information and the second control information according to the first detection information.

[0057] In this embodiment, the wafer stage cleaning device 100 may further include at least one first detection unit 130. The first detection unit 130 is used to detect the contamination condition of the bearing surface 201, where the contamination condition includes but is not limited to the quantity, type, volume, position, etc. of the contaminants. The first detection unit 130 can be implemented by an optical sensor, an acoustic wave sensor, etc. to detect the contamination condition. Exemplarily, the first detection unit 130 includes a light emitter, a light receiver, and a processor. The light emitted by the light emitter to the bearing surface is reflected by the bearing surface and the contaminants on the bearing surface, and the reflected light is received by the light receiver. In this way, the processor can determine the contamination condition of the bearing surface 201 according to the received reflected light and generate first detection information. For example, the processor can determine the volume of the contaminants according to the light intensity of the reflected light, and determine the type of the contaminants according to the frequency of the reflected light.

[0058] Based on the received first detection information, the control unit 120 can determine the operating parameters of the gas output unit 111 and the negative pressure generating unit 112, so as to generate the first control information and the second control information respectively.

[0059] In some embodiments, the first detection unit 130 may only receive the reflected light without processing the reflected light information (such as the original information like light intensity, frequency, etc.), and send the reflected light information to the control unit 120 as the first detection information. The control unit 120 may determine the contamination condition of the bearing surface based on the first detection information, and generate the first control information and the second control information according to the contamination condition.

[0060] In some embodiments, the control unit 120 is further configured to generate the first control information including the first moment and the second control information including the second moment according to the first detection information; wherein, the first moment is used to indicate the moment when the gas output unit 111 starts to work, the second moment is used to indicate the moment when the negative pressure generation unit 112 starts to work, and there is a time difference between the first moment and the second moment.

[0061] In this embodiment, the control unit 120 is further configured to determine the time difference between the first moment when the gas output unit 111 starts to work and the second moment when the negative pressure generation unit 112 starts to work according to the contamination condition characterized by the first detection information. Exemplarily, in the case where the mass of the contaminant is large and / or the adhesion of the contaminant is strong, the control unit 120 may make the time difference between the first moment and the second moment large; in the case where the mass of the contaminant is small and / or the adhesion of the contaminant is weak, the control unit 120 may make the time difference between the first moment and the second moment small. It can be understood that the mass of the contaminant can be determined by the control unit 120 according to the type and volume of the contaminant, and the adhesion of the contaminant can be determined by the control unit 120 according to the type of the contaminant. In this way, the control unit 120 can flexibly control the starting moments of the gas output unit 111 and the negative pressure generation unit 112, so as to save energy consumption on the premise of ensuring effective inhalation of contaminants, and reduce the problems of height change or tilt of the bearing surface caused by too long negative pressure duration.

[0062] In some other embodiments, the control unit 120 may further determine the third moment when the gas output unit 111 stops working and the fourth moment when the negative pressure generation unit 112 stops working according to the first detection information.

[0063] In some embodiments, the control unit 120 is further configured to generate the path information for the movement of the cleaning head 110 according to the first detection information; the wafer stage cleaning device 100 further includes: a driving unit 140, coupled to the control unit 120; the driving unit 140 is configured to receive the path information and drive the cleaning head 110 to move according to the path information.

[0064] In this embodiment, the control unit 120 is further configured to plan a suitable cleaning path according to the pollution condition characterized by the first detection information, and send the path information to the driving unit 140, so that the driving unit 140 drives the cleaning head 110 to move and clean along the cleaning path. Wherein, the driving unit 140 may include mechanisms such as a slide rail, a connecting rod, and a robotic arm. Exemplarily, the control unit 120 may use machine learning, deep learning, artificial neural networks, etc., taking the distribution position, volume, and type of the pollutants characterized by the first detection information as inputs to plan the optimal cleaning path. In this way, the cleaning efficiency of the wafer stage cleaning device 100 can be effectively improved, and the cleaning time can be shortened.

[0065] In some embodiments, according to the distribution position of the pollutants, the control unit 120 may control the cleaning head 110 to clean the bearing surface 201 multiple times, cleaning one area each time. During the process of the cleaning head 110 moving from one area to another area, the control unit 120 may stop the gas output unit 111 and the negative pressure generating unit 112 from working to save energy consumption.

[0066] In some embodiments, as Figure 2 shown, the wafer stage cleaning device 100 further includes: a second detection unit 150, disposed on the cleaning head 110 and coupled to the control unit 120; the second detection unit 150 is configured to detect the pollution condition of the cleaning area after the cleaning head 110 finishes cleaning the cleaning area, so as to generate second detection information; the cleaning area includes the projection area of the cleaning head 110 on the bearing surface 201; when the second detection information indicates that there are no pollutants in the cleaning area, the control unit 120 controls the cleaning head 110 to stop cleaning the cleaning area; when the second detection information indicates that there are pollutants in the cleaning area, the control unit 120 controls the cleaning head 110 to clean the cleaning area again.

[0067] In this embodiment, the wafer stage cleaning device 100 further includes one or more second detection units 150 disposed on the cleaning head 110. The second detection unit 150 may be implemented by an optical sensor, an acoustic wave sensor, etc. to achieve the detection function. The second detection unit 150 is configured to detect whether there are still pollutants remaining on the cleaning area after the cleaning head 110 finishes cleaning a cleaning area. Here, the cleaning area may include the projection area of the cleaning head 110 on the bearing surface 201. It should be noted that the cleaning area may also be the maximum area corresponding to one cleaning by the cleaning head 110 in practical applications, that is, the cleaning area may be larger than the projection area of the cleaning head 110 on the bearing surface 201. This new type of implementation does not have too many restrictions.

[0068] Thus, after the cleaning head 110 finishes cleaning the cleaning area, if the second detection unit 150 still detects contaminants in the cleaning area, the control unit 120 will, in response to the second detection information generated by the second detection unit 150, control the cleaning head 110 to clean the cleaning area again; if the second detection unit 150 does not detect contaminants in the cleaning area, the control unit 120 will, in response to the second detection information generated by the second detection unit 150, control the cleaning head 110 to stop cleaning the cleaning area, for example, control the cleaning head 110 to move to the next cleaning area along the planned path.

[0069] In some embodiments, the second detection unit 150 can detect the contamination situation of the contaminants remaining in the cleaning area. The specific detection implementation method can refer to the description of the first detection unit in the above embodiments, which will not be elaborated here. Thus, the second detection unit 150 can generate second detection information reflecting the contamination situation of the remaining contaminants, and the control unit 120 can then determine the operating parameters of the gas output unit 111 and the negative pressure generating unit 112 for re-cleaning according to the second detection information to optimize the cleaning effect.

[0070] In some embodiments, as Figure 3 shown, the surface of the cleaning head 110 facing the bearing surface includes an edge area A1 and a central area A2, and the edge area A1 surrounds the central area A2; the cleaning head 110 includes a plurality of the gas output units 111 and a plurality of the negative pressure generating units 112; a plurality of the gas output units 111 are arranged in the edge area A1, and a plurality of the negative pressure generating units 112 are arranged in the central area A2.

[0071] In this embodiment, a plurality of gas output units 111 and a plurality of negative pressure generating units 112 can be arranged on the cleaning head 110. The gas output units 111 are distributed in the edge area A1 of the cleaning head 110, and the negative pressure generating units 112 are distributed in the central area A2 of the cleaning head 110. Thus, the plurality of gas output units 111 surrounding the plurality of negative pressure generating units 112 can output an air flow from the outside to the inside, that is, an air flow flowing from the edge area A1 to the central area A2, so as to further improve the cleaning effect of the wafer stage cleaning device 100.

[0072] It can be understood that Figure 3 only exemplarily shows that the surface of the cleaning head 110 facing the bearing surface is circular, the edge area A1 is an annular shape, and the central area A2 is circular. The surface of the cleaning head 110 facing the bearing surface can also be other shapes, such as rectangular, other polygonal or irregular shapes, etc.; the edge area A1 can also be other types of annular shapes; the central area A2 can also be other shapes, such as rectangular, other polygonal or irregular shapes, etc., which are not limited here too much.

[0073] In some embodiments, as Figure 4 shown, the wafer stage cleaning device 100 further includes: a protection structure 160 disposed on a side of the cleaning head 110 close to the bearing surface 201; the protection structure 160 is configured to protect the bearing surface 201.

[0074] In this embodiment, the wafer stage cleaning device 100 further includes a protection structure 160. The protection structure 160 is located on a side of the cleaning head 110 close to the bearing surface 201. The protection structure 160 may be composed of a soft material or an elastic material, so as to reduce the damage to the bearing surface 201 when the cleaning head 110 descends excessively and contacts the bearing surface 201. In some embodiments, as Figure 4 shown, the protection structure 160 may further include a plurality of inverted triangular structures, so as to prevent a sealed area from being formed between the negative pressure generating unit 112 and the bearing surface 201 due to the excessive descent of the cleaning head 110, and to reduce the problem of height change or inclination of the bearing surface 201 caused by excessive negative pressure. It can be understood that the lowermost end of the protection structure 160 is lower than the lowermost ends of the gas output unit 111 and the negative pressure generating unit 112.

[0075] In some embodiments, parts of the gas output unit 111 and the negative pressure generating unit 112 close to the bearing surface 201 (such as components like pipes and nozzles) may be composed of a soft material or an elastic material to further protect the bearing surface 201.

[0076] In some embodiments, the cleaning head 110 may further be driven by a motor to rotate. The cleaning head 110 may rotate around its own central axis. The motor may be disposed inside the cleaning head or on the machine table, and drives the cleaning head 110 to rotate through a transmission shaft. In this way, during the cleaning process, the rotating cleaning head 110 can effectively improve the cleaning effect, and still generate a large upward buoyancy force on the contaminants even when the output gas flow rate is small, so as to make the contaminants separate from the bearing surface 201.

[0077] The present invention further provides a lithography machine stage, including the wafer stage cleaning device according to any one of the above embodiments.

[0078] In this way, the wafer stage cleaning device can effectively clean the contaminants on the bearing surface, so as to reduce the protrusion or inclination of the surface of the wafer supported thereby, and further reduce the exposure pattern distortion caused by defocusing of local patterns during the exposure process, and reduce the alignment deviation between layers during the exposure process of multi-layer patterns, and improve the yield of the lithography process.

[0079] In some embodiments, the gas source of the gas output unit in the wafer stage cleaning device may be the air supply unit of the lithography machine stage itself.

[0080] It should be understood that the "one embodiment" or "an embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present utility model. Therefore, the "in one embodiment" or "in an embodiment" that appears throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics may be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present utility model, the magnitude of the serial numbers of the above processes does not mean the sequence of execution. The execution sequence of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present utility model. The serial numbers of the embodiments of the present utility model above are only for description and do not represent the advantages or disadvantages of the embodiments.

[0081] The above is only the preferred embodiment of the present utility model, and does not limit the patent scope of the present utility model. Any equivalent structural transformation made by using the content of the specification and drawings of the present utility model under the concept of the present utility model, or direct / indirect application in other related technical fields is included in the patent protection scope of the present utility model.

Claims

1. A wafer stage cleaning device, characterized in that, Comprising: A cleaning head, located above the carrying surface of the wafer stage and movable relative to the carrying surface; The cleaning head includes: A gas output unit for outputting gas to separate contaminants from the carrying surface; A negative pressure generating unit for generating negative pressure to suck in the contaminants.

2. The wafer stage cleaning device according to claim 1, wherein The gas output unit is further configured to adjust the output direction of the gas; wherein, the output direction is parallel to the carrying surface, or the angle between the output direction and the carrying surface is less than 90 degrees.

3. The wafer stage cleaning device according to claim 2, wherein, The wafer stage cleaning device further includes: A control unit, coupled to the gas output unit and the negative pressure generating unit; the control unit is configured to generate first control information and second control information; The gas output unit is further configured to receive the first control information and adjust the output direction and output flow rate of the gas according to the first control information; The negative pressure generating unit is further configured to receive the second control information and adjust the negative pressure according to the second control information.

4. The wafer stage cleaning device according to claim 3, wherein, The wafer stage cleaning device further includes: A first detection unit, coupled to the control unit; the first detection unit is configured to detect the contamination condition of the carrying surface to generate first detection information; The control unit is specifically configured to receive the first detection information and generate the first control information and the second control information according to the first detection information.

5. The wafer stage cleaning device according to claim 4, wherein, The control unit is further configured to generate the first control information including a first moment and the second control information including a second moment according to the first detection information; wherein, the first moment is used to indicate the moment when the gas output unit starts to work, the second moment is used to indicate the moment when the negative pressure generating unit starts to work, and there is a time difference between the first moment and the second moment.

6. The wafer stage cleaning device according to claim 4, wherein, The control unit is further configured to generate path information for the movement of the cleaning head according to the first detection information; The wafer stage cleaning device further includes: A driving unit, coupled to the control unit; the driving unit is configured to receive the path information and drive the cleaning head to move according to the path information.

7. The wafer stage cleaning device according to claim 3, wherein, The wafer stage cleaning device further includes: A second detection unit, disposed on the cleaning head and coupled to the control unit; the second detection unit is configured to detect the contamination condition of the cleaning area after the cleaning head finishes cleaning the cleaning area to generate second detection information; the cleaning area includes the projection area of the cleaning head on the carrying surface; When the second detection information indicates that there are no contaminants in the cleaning area, the control unit controls the cleaning head to stop cleaning the cleaning area; When the second detection information indicates that there are contaminants in the cleaning area, the control unit controls the cleaning head to clean the cleaning area again.

8. The wafer stage cleaning device according to claim 1, characterized in that, The surface of the cleaning head facing the carrying surface includes an edge area and a central area, and the edge area surrounds the central area; The cleaning head includes a plurality of the gas output units and a plurality of the negative pressure generating units; the plurality of gas output units are disposed in the edge area, and the plurality of negative pressure generating units are disposed in the central area.

9. The wafer stage cleaning device according to claim 1, wherein, The wafer stage cleaning device further includes: A protection structure disposed on a side of the cleaning head close to the carrying surface; the protection structure is used to protect the carrying surface.

10. A lithography machine, characterized in that, It includes the wafer stage cleaning device according to any one of claims 1 to 9.

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