Heat sink and semiconductor laser

Abstract

The utility model discloses a heat sink and a semiconductor laser. The heat sink is used for the semiconductor laser, the semiconductor laser comprises the heat sink, a laser module and a cover body, the laser module and the cover body are arranged on the heat sink, the heat sink is provided with a first surface and a second surface which are oppositely arranged along a first direction, and the first surface is provided with a first mounting surface, a second mounting surface and a third mounting surface which are sequentially arranged along a second direction; the distance between the second mounting surface and the second surface is greater than the distance between the first mounting surface and the second surface and the distance between the third mounting surface and the second surface; wherein the first direction is perpendicular to the second direction, and the first direction is the stacking direction of the heat sink and the cover body; the second mounting surface is used for mounting a laser unit in the laser module, the first mounting surface is used for mounting an electrode unit in the laser module, and the third mounting surface is used for mounting the cover body. In this way, the size of the semiconductor laser can be reduced, and the structural stability and reliability of the semiconductor laser can be improved.

Description

Technical Field

[0001] This application relates to the technical field of lasers, and particularly to a heat sink and a semiconductor laser. Background Art

[0002] Semiconductor lasers have the characteristics of high power, small volume, long life, and high reliability, and have important and extensive applications in the fields of industrial processing, solid laser pumping, laser medical beauty, etc. In some fields such as home laser medical devices, not only high power of the laser is required, but also high requirements are put forward for the volume, installation portability, and reliability of the laser.

[0003] A semiconductor laser includes a heat sink and a laser module disposed on the heat sink. In related technologies, the heat sink is provided in a plate shape, and each component in the laser module is installed on the same side plane of the plate. This structure will result in a relatively large overall volume of the semiconductor laser and poor stability. Summary of the Utility Model

[0004] This application provides a heat sink and a semiconductor laser to reduce the volume of the semiconductor laser, and improve the structural stability and reliability of the semiconductor laser.

[0005] This application proposes a heat sink. The heat sink is used for a semiconductor laser, and the semiconductor laser includes a heat sink, a laser module, and a cover disposed on the heat sink. The heat sink is provided with a first surface and a second surface oppositely arranged along a first direction. The first surface is provided with a first mounting surface, a second mounting surface, and a third mounting surface arranged in sequence along a second direction. The distance between the second mounting surface and the second surface is greater than the distance between the first mounting surface and the second surface and the distance between the third mounting surface and the second surface; wherein, the first direction is perpendicular to the second direction, and the first direction is the stacking direction of the heat sink and the cover; the second mounting surface is used for mounting a laser unit in the laser module, the first mounting surface is used for mounting an electrode unit in the laser module, and the third mounting surface is used for mounting the cover.

[0006] In some embodiments, two mounting grooves are formed on the second mounting surface at intervals along a third direction, so as to divide the second mounting surface into an intermediate mounting surface arranged at intervals along the third direction and two side mounting surfaces respectively located on both sides of the intermediate mounting surface; wherein, the intermediate mounting surface is used for mounting the laser unit, the side mounting surface is used for connecting external components; the mounting groove is used for limiting the cover; the third direction is perpendicular to the first direction and the second direction respectively.

[0007] In some embodiments, a first mounting hole is provided on the side mounting surface, and the first mounting hole is used to cooperate with a first mounting post to connect the side mounting surface to the external component.

[0008] In some embodiments, a second mounting hole is provided on the first mounting surface, and the second mounting hole is used to cooperate with a second mounting post to connect the cover to the first mounting surface.

[0009] This application provides a semiconductor laser. The semiconductor laser includes: the above-mentioned heat sink, a laser module and a cover disposed on the heat sink; wherein, the laser module includes a laser unit and an electrode unit, the laser unit is disposed on the second mounting surface, one end of the electrode unit is mounted on the first mounting surface, and the other end of the electrode unit extends outside the heat sink along the second direction; the cover covers the laser unit and the one end of the electrode unit.

[0010] In some embodiments, the cover is provided with two first side walls perpendicular to the third direction and oppositely arranged; two mounting grooves are provided on the second mounting surface at intervals along the third direction, and the laser unit is mounted between the two mounting grooves on the second mounting surface; the two first side walls of the cover are respectively limited in the two mounting grooves; wherein, the third direction is perpendicular to the first direction and the second direction respectively.

[0011] In some embodiments, the cover is further provided with a second side wall perpendicular to the first side wall and extending along the third direction, and the second side wall is provided with a viewing window; the end of the second side wall facing the heat sink abuts against the third mounting surface.

[0012] In some embodiments, the cover is further provided with a third side wall perpendicularly connected to the first side wall and the second side wall, and a receiving cavity facing the heat sink is formed between the second side wall and the third side wall. The laser unit and the one end of the electrode unit are disposed in the receiving cavity, the other end of the electrode unit is disposed outside the receiving cavity, and the third side wall is provided with a third mounting hole; a second mounting hole is provided on the first mounting surface, and the third mounting hole and the second mounting hole are connected by a second mounting post to connect the cover to the first mounting surface.

[0013] In some embodiments, the electrode unit includes: a substrate disposed on the first mounting surface; two electrode plates with opposite polarities and spaced apart along the third direction, disposed on the substrate, one end of the electrode plate is insulated from the heat sink and connected to the electrode of the laser unit, and the other end of the electrode plate extends outside the heat sink along the second direction; an inner region of one end of the electrode plate close to the laser unit is provided with a bonding region for bonding the electrode plate to the corresponding electrode of the laser unit; a fourth mounting hole is provided between the bonding regions of the two electrode plates, and is located between the third mounting hole and the second mounting hole along the first direction.

[0014] The beneficial effects of the technical solution of the present application are as follows: The heat sink for a semiconductor laser of the present application is provided with a first surface and a second surface disposed along the first direction. The first surface is provided with a first mounting surface, a second mounting surface, and a third mounting surface arranged in sequence along the second direction perpendicular to the first direction. The distance between the second mounting surface and the second surface is greater than the distance between the first mounting surface and the second surface and the distance between the third mounting surface and the second surface, that is, the second mounting surface protrudes toward the side away from the second surface relative to the first mounting surface and the third mounting surface. With this structure, the laser unit, the electrode unit, and the cover can be installed on mounting surfaces at different heights. On the one hand, the side wall of the cover can be sunk along the first direction toward the second surface, which is convenient for expanding the size of the side wall of the cover along the first direction within a limited height, so that the laser unit can be aligned as much as possible to the middle region of the side wall, facilitating the expansion of the light spot range of the laser unit; on the other hand, the electrode unit can be sunk along the first direction toward the second surface, and the first mounting surface and the third mounting surface are sunk toward the second surface relative to the second mounting surface, which can reduce the size of the semiconductor laser along the first direction and will not increase the size of the semiconductor laser along the second direction and other directions. Therefore, the volume of the semiconductor laser can be reduced, and the sunken mounting surface will form a limiting platform, which can improve the connection stability between the cover and the electrode unit and the heat sink. Therefore, the present application can also improve the reliability of the semiconductor laser. Description of the Drawings

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained according to these drawings, where:

[0016] Figure 1 is a schematic structural diagram of an embodiment of the heat sink of the present application;

[0017] Figure 2 is a schematic structural diagram of an embodiment of the semiconductor laser of the present application;

[0018] Figure 3 It is a schematic diagram of the disassembled structure of an embodiment of the semiconductor laser of the present application;

[0019] Figure 4 It is a schematic diagram of the structure of the electrode unit in the semiconductor laser of the present application;

[0020] Figure 5 It is a schematic diagram of a working state of the semiconductor laser of the present application;

[0021] Figure 6 It is a schematic diagram of another working state of the semiconductor laser of the present application;

[0022] Figure 7 It is a schematic diagram of yet another working state of the semiconductor laser of the present application. Detailed implementation manners

[0023] The present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be specifically noted that the following embodiments are only used to illustrate the present application, but do not limit the scope of the present application. Similarly, the following embodiments are only partial embodiments of the present application rather than all embodiments. All other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present application.

[0024] In the description of the embodiments of the present application, it should be noted that unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected, or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific situations.

[0025] In the embodiments of the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature can be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature can be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below" and "beneath" the second feature can be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0026] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the embodiments of this application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0027] This application first proposes a heat sink, as Figures 1 to 3 shown, the heat sink 10 of this embodiment is for a semiconductor laser (not labeled in the figure). The semiconductor laser includes the heat sink 10, a laser module 20 disposed on the heat sink 10, and a cover 30. The heat sink 10 is provided with a first surface and a second surface oppositely arranged along a first direction z. The first surface is provided with a first mounting surface C, a second mounting surface A, and a third mounting surface B arranged in sequence along a second direction x. The distance between the second mounting surface A and the second surface is greater than the distance between the first mounting surface C and the second surface and the distance between the third mounting surface B and the second surface; wherein, the first direction z is perpendicular to the second direction x, and the first direction z is the stacking direction of the heat sink 10 and the cover 30; the second mounting surface A is used to mount the laser unit 21 in the laser module 20, the first mounting surface C is used to mount the electrode unit 22 in the laser module 20, and the third mounting surface B is used to mount the cover 30.

[0028] Among them, the laser unit 21 is used to generate laser to form a laser spot; the electrode unit 22 is used to realize the electrical connection between the laser unit 21 and the external power supply and controller of the semiconductor laser, etc.; the heat sink 10 is a structural support structure and heat dissipation structure of the semiconductor laser, and can at least improve the structural stability and heat dissipation performance of the semiconductor laser.

[0029] In some embodiments, the heat sink 10 can be processed from high thermal conductivity materials such as copper and aluminum.

[0030] In an application scenario, when the semiconductor laser operates, the second surface of the heat sink 10 is located on the workbench, and the second surface is a plane to improve the operating reliability of the semiconductor laser. Multiple mounting surfaces with different distances from the second surface are provided on the first surface of the heat sink 10 that is opposite to the second surface. For example, when the semiconductor laser is placed on a horizontal plane, the above-mentioned multiple mounting surfaces have different heights; among them, the second mounting surface A for mounting the laser unit 21 is located between the first mounting surface C and the third mounting surface B, and the height of the second mounting surface A is greater than the height of the first mounting surface C and the height of the third mounting surface B, which can improve the connection stability and the convenience of loading and unloading of the laser unit 21.

[0031] With the above structure, in this embodiment, the laser unit 21, the electrode unit 22, and the cover 30 can be mounted on mounting surfaces with different heights. On the one hand, the side wall of the cover 30 can be sunk along the first direction z towards the second surface, which is convenient for expanding the size of the side wall of the cover 30 along the first direction z within a limited height, so that the laser unit 21 can be aligned as much as possible to the middle area of the side wall, which is convenient for expanding the spot range of the laser unit 21; on the other hand, the electrode unit 22 can be sunk along the first direction z towards the second surface, and the first mounting surface C and the third mounting surface B are sunk towards the second surface relative to the second mounting surface A, which can reduce the size of the semiconductor laser along the first direction z and will not increase the size of the semiconductor laser along the second direction x and other directions. Therefore, the volume of the semiconductor laser can be reduced, and the sunken mounting surface will form a limiting platform, which can improve the connection stability between the cover 30 and the electrode unit 22 and the heat sink 10. Therefore, this embodiment can also improve the reliability of the semiconductor laser.

[0032] In some embodiments, two mounting grooves D are formed on the second mounting surface A at intervals along the third direction y, so as to divide the second mounting surface A into an intermediate mounting surface A1 arranged at intervals along the third direction y and two side mounting surfaces A2 located on both sides of the intermediate mounting surface A1 respectively; among them, the intermediate mounting surface A1 is used to mount the laser unit 21, and the side mounting surface A2 is used to connect external components (not shown in the figure); the mounting groove D is used to limit the cover 30; the third direction y is perpendicular to the first direction z and the second direction x respectively.

[0033] Among them, the mounting groove D can not only improve the connection stability of the cover 30, but also improve the sealing performance between the cover 30 and the second mounting surface A, thereby reducing the influence between the external environment and the laser unit 21 on the intermediate mounting surface A1, thereby improving the reliability of the semiconductor laser.

[0034] In other embodiments, a sealing strip can be further provided in the mounting groove, or the cover can be directly pasted and sealed on the second mounting surface to simplify the process.

[0035] In some embodiments, the installation groove D penetrates through the second installation surface A along the second direction x, facilitating the cover body 30 to extend from the third installation surface B to the first installation surface C, and then enabling the entire laser unit 21 to be covered within the cover body 30.

[0036] In some embodiments, a first installation hole 41 is provided on the side installation surface A2, and the first installation hole 41 is used to cooperate with a first installation post (not shown in the figure) to connect the side installation surface A2 with an external component.

[0037] In some embodiments, the external component may include a radiator and the like.

[0038] In this embodiment, the heat sink 10 of the semiconductor laser is connected to the external component to achieve the connection between the semiconductor laser and the external component. On the one hand, as the carrier of other components of the semiconductor laser, the heat sink 10 connects the external component, which can improve the structural stability and the reliability of components such as the laser unit 21 and the electrode unit 22 that play an important role in the performance of the laser, thereby improving the reliability of the semiconductor laser. On the other hand, the laser unit 21, which is the main heat source, is disposed on the heat sink 10, and the laser unit 21 is disposed within the cover body 30 for the sake of sealing. Therefore, connecting to the external component through the heat sink 10 can not only achieve the rapid heat dissipation of components such as the laser unit 21 but also not affect the sealing of the laser unit 21.

[0039] In some embodiments, the first installation holes 41 are provided on both side installation surfaces A2 on both sides of the middle installation surface A1, which can increase the connection stability between the semiconductor laser and the external component.

[0040] Of course, in other embodiments, the connection between the heat sink and the external component can also be achieved through other structures.

[0041] In some embodiments, a second installation hole 42 is provided on the first installation surface C, and the second installation hole 42 is used to cooperate with the second installation post 43 to connect the cover body 30 with the first installation surface C. In this way, the connection stability between the cover body 30 and the heat sink 10 can be increased, and the sealing performance of the cover body 30 for the laser unit 21 can be improved, thereby improving the reliability of the semiconductor laser.

[0042] In other embodiments, other structures can also be adopted to achieve the connection between the cover body and the heat sink.

[0043] In the related art, most semiconductor lasers have an open package structure, which is difficult to adapt to various different application scenarios, and the reliability of semiconductor lasers in harsh environments is relatively poor.

[0044] Therefore, the present application further proposes a semiconductor laser, such as Figures 1 to 4As shown in the figure, the semiconductor laser of this embodiment includes a heat sink 10, a laser module 20 disposed on the heat sink 10, and a cover 30; wherein, the heat sink 10 is provided with a first surface and a second surface oppositely disposed along a first direction z, the first surface is provided with a first mounting surface C, a second mounting surface A, and a third mounting surface B arranged in sequence along a second direction x, and the distance between the second mounting surface A and the second surface is greater than the distance between the first mounting surface C and the second surface and the distance between the third mounting surface B and the second surface; wherein, the first direction z is perpendicular to the second direction x, and the first direction z is the stacking direction of the heat sink 10 and the cover 30; wherein, the laser module 20 includes a laser unit 21 and an electrode unit 22, the laser unit 21 is disposed on the second mounting surface A, one end of the electrode unit 22 is mounted on the first mounting surface C, and the other end of the electrode unit 22 extends outside the heat sink 10 along the second direction x; the cover 30 covers one end of the laser unit 21 and the electrode unit 22.

[0045] The laser unit 21 and the electrode unit 22 are arranged along the second direction x. One end of the electrode piece 221 in the electrode unit 22 is electrically connected to the electrode of the laser unit 21, and the other end extends outside the heat sink 10 along the second direction x to be connected to devices such as a power supply and a controller to provide electrical energy for the laser unit 21 and control the laser unit 21 to emit light, etc.

[0046] With the above structure, this embodiment can enable the laser unit 21, the electrode unit 22, and the cover 30 to be installed on mounting surfaces at different heights. On the one hand, the side wall of the cover 30 can sink along the first direction z towards the second surface, which is convenient for expanding the size of the side wall of the cover 30 along the first direction z within a limited height, so that the laser unit 21 can be aligned as much as possible to the middle area of the side wall, which is convenient for expanding the spot range of the laser unit 21; on the other hand, the electrode unit 22 can sink along the first direction z towards the second surface, and the first mounting surface C and the third mounting surface B sink towards the second surface relative to the second mounting surface A, which can reduce the size of the semiconductor laser along the first direction z and will not increase the size of the semiconductor laser along the second direction x and other directions. Therefore, the volume of the semiconductor laser can be reduced, and the sunken mounting surface will form a limiting platform, which can improve the connection stability between the cover 30 and the electrode unit 22 and the heat sink 10. Therefore, this embodiment can also improve the reliability of the semiconductor laser; further, this embodiment uses the cover 30 to seal and protect the laser unit 21, etc., which can improve the reliability of the laser unit 21 and the semiconductor laser, make the application scenarios of the semiconductor laser diversified, and be suitable for some harsh environments.

[0047] In some embodiments, the cover 30 is provided with two first side walls 31 that are perpendicular to the third direction y and are oppositely arranged; two mounting grooves D are provided on the second mounting surface A at intervals along the third direction y, and the laser unit 21 is mounted between the two mounting grooves D on the second mounting surface A; the two first side walls 31 of the cover 30 are respectively limited within the two mounting grooves D; wherein, the third direction y is perpendicular to the first direction z and the second direction x respectively.

[0048] The two mounting grooves D divide the second mounting surface A into an intermediate mounting surface A1 arranged at intervals along the third direction y and two side mounting surfaces A2 respectively located on both sides of the intermediate mounting surface A1; the laser unit 21 is mounted on the intermediate mounting surface A1, and the side mounting surface A2 is used to connect external components.

[0049] The mounting groove D can not only improve the connection stability of the cover 30, but also improve the sealing performance between the cover 30 and the second mounting surface A, thereby reducing the influence between the external environment and the laser unit 21 on the intermediate mounting surface A1, and thus improving the reliability of the semiconductor laser.

[0050] In some embodiments, the first side wall 31 is arranged in an L shape, and the end of the first side wall 31 close to the third mounting surface B extends toward the second surface and abuts against the third mounting surface B. The middle region of the first side wall 31 along the third direction y is limited within the mounting groove D on the side close to the second surface; the other end of the first side wall 31 along the third direction y extends above the first mounting surface C. The first side wall 31 is arranged in an L shape, which is convenient for matching with the second mounting surface A and the third mounting surface B, and improves its sealing performance and stability.

[0051] In some embodiments, the cover 30 is further provided with a second side wall 32 that is perpendicular to the first side wall 31 and extends along the third direction y, and the second side wall 32 is provided with a window; the end of the second side wall 32 facing the heat sink 10 abuts against the third mounting surface B.

[0052] Wherein, the window may include a window piece 33 provided on the second side wall 32, etc., which can achieve sealing and allow light to pass through. The light-emitting side of the laser unit 21 faces the window.

[0053] The third mounting surface B can limit both the second side wall 32 and the first side wall 31 of the cover 30, which can improve the connection stability between the cover 30 and the heat sink 10. And the second side wall 32 sinks relative to the laser unit 21 toward the second surface, which can make the visible window provided on the second side wall 32 more centered relative to the laser unit 21, thereby being able to expand the light spot range of the laser unit 21.

[0054] In some embodiments, the projection of the cover 30 on the heat sink 10 is located within the second surface of the heat sink 10, which can reduce the volume of the semiconductor laser, and can also make the cover 30 smaller, so that the semiconductor laser loses weight.

[0055] In some embodiments, the cover 30 further has a third side wall 34 perpendicularly connected to the first side wall 31 and the second side wall 32, and an accommodation cavity facing the heat sink 10 is formed between the second side wall 32 and the third side wall 34. One ends of the laser unit 21 and the electrode unit 22 are disposed in the accommodation cavity, and the other end of the electrode unit 22 is disposed outside the accommodation cavity. The third side wall 34 is provided with a third mounting hole 35; a second mounting hole 42 is provided on the first mounting surface C, and the cover 30 and the first mounting surface C are connected through cooperation of the third mounting hole 35 and the second mounting hole 42 by a second mounting post 43.

[0056] Both ends of the second mounting post 43 are respectively inserted into the third mounting hole 35 and the second mounting hole 42 to fixedly connect the cover 30 and the first mounting surface C. The second mounting post 43 locks one end of the cover 30 facing the first mounting surface C of the heat sink 10, and the other end of the cover 30 abuts against the third mounting surface B of the heat sink 10, so as to achieve a stable connection between the cover 30 and the heat sink 10.

[0057] In some embodiments, the cover 30 further includes a fourth side wall disposed opposite to the second side wall 32 and respectively connected to the two first side walls 31 and the third side wall 34, so as to form an accommodation cavity with an opening only facing the heat sink 10, and the opening of the accommodation cavity is sealed by the heat sink 10, thereby further improving the reliability of the semiconductor laser.

[0058] In some embodiments, the electrode unit 22 includes: a substrate 222 and two electrode sheets 221 with opposite polarities and spaced apart along the third direction y. Wherein, the substrate 222 is disposed on the first mounting surface C; the electrode sheets 221 are disposed on the substrate 222. One end of the electrode sheet 221 is insulated from the heat sink 10 and is connected to the electrode of the laser unit 21, and the other end of the electrode sheet 221 extends outside the heat sink 10 along the second direction x; a bonding area 100 is provided in the inner area of one end of the electrode sheet 221 close to the laser unit 21 for bonding connection between the electrode sheet 221 and the corresponding electrode of the laser unit 21; a fourth mounting hole 45 is provided between the bonding areas 100 of the two electrode sheets 221 and is located between the second mounting hole 42 and the third mounting hole 35 along the first direction z.

[0059] In some embodiments, the laser unit 21 includes a laser chip 211 (such as a bar strip), a substrate (not labeled in the figure), gold wires, and solder (not labeled in the figure); the P surface (positive electrode) of the bar strip is mounted on the positive electrode of the substrate through solder, and the N surface (positive electrode) is connected to the negative electrode of the substrate through a gold wire. The laser unit 21 can package laser chips with different sizes and different wavelengths to adapt to different application scenarios.

[0060] In some embodiments, the size of the intermediate mounting surface A1 of the heat sink is the same as that of the laser unit 21, which is used to help the laser unit 21 be centered for welding to ensure the consistency of packaging; the stepped surface of the third mounting surface B is lower than that of the second mounting surface A and is arranged at the front end of the heat sink 10, and its forward extension length needs to meet the requirement of not blocking light; the stepped surface of the first mounting surface C is lower than that of the second mounting surface A and is arranged at the rear end of the heat sink 10, and the stepped surface of the first mounting surface C is used for bonding the electrode unit 22.

[0061] In some embodiments, the electrode piece 221 includes a flexible printed circuit board (FPC) electrode. The height of the stepped surface of the first mounting surface C is designed such that the height of the upper surface of the FPC electrode is the same as the height of the bottom surface of the mounting groove D. The FPC electrode is bonded to the stepped surface of the first mounting surface C with glue. The FPC electrode is divided into two left and right parts, and the two parts are insulated and independent from each other. The front end is wrapped with an insulating layer 47 to insulate the FPC electrode from the heat sink 10. The exposed copper at the front end of the left and right parts serves as the positive and negative electrode bonding regions. The rear end is exposed with copper and through holes are processed to facilitate external wiring. In addition, a fourth mounting hole 45 is processed in the center of the stepped surface of the first mounting surface C.

[0062] In some embodiments, the laser unit 21 can be centered and soldered onto the heat sink 10 by reflow soldering. The front end of the laser unit 21 is aligned with the front step of the heat sink 10. The positive electrode of the laser unit 21 and the positive electrode of the FPC electrode are bonded and connected using the aluminum wire bonding process. The negative electrode of the laser unit 21 is connected to the negative electrode of the FPC electrode. The positive and negative electrodes of the FPC electrode are externally connected to a power supply to supply power to the laser unit 21.

[0063] For other descriptions of the heat sink 10, reference can be made to the above embodiments and will not be elaborated here.

[0064] According to different requirements, such as Figures 5 to 7 As shown, the semiconductor laser can output a beam with a large divergence angle without fast-axis shaping, or can also increase the fast-axis shaping lens 101 to output a beam with a specific divergence angle and a fast-axis collimated parallel beam.

[0065] Further, after encapsulation and beam shaping are completed, the cover 30 is installed in the installation groove D facing the middle installation surface A1, with the front end aligned with the front end of the heat sink 10. The cover 30 is formed by machining, and the height of the inner hole wall is higher than that of the gold wire and the aluminum wire; a window and a window sheet 33 installation groove are machined at the front end, and a third installation hole 35 is machined at the rear end. The window is used to pass laser light. The lateral dimension (dimension along the third direction y) of the window is larger than the spot width of the slow axis of the laser chip 211 propagating here, and the longitudinal dimension (dimension along the second direction x) is larger than the beam size of the fast axis of the laser chip 211 when no beam shaping is performed and it is transmitted to this position; the window sheet machining groove machined at the window installs the window sheet 33, which is used to pass laser light and seal; the part of the cover 30 in contact with other structural parts such as the heat sink 10 is fixed by glue bonding and also plays a sealing role. Finally, a fixing screw is screwed into the third installation hole 35 (screw hole) at the rear end of the sealing cover to ensure the installation reliability and firmness.

[0066] In some embodiments, the semiconductor laser can be used together with a heat sink with air-cooling or a water-cooled block with water flowing through.

[0067] The semiconductor laser of the present application encapsulates a single laser bar, obtaining the characteristic of a wider slow-axis spot of the bar compared to a single-chip. The single laser bar is encapsulated into an independent semiconductor laser and can be directly used in products. The laser chip adopts a fully sealed structure, improving the reliability and adaptability in harsh environments. The entire product has a simple structure, reliable performance, and low cost.

[0068] The heat sink for a semiconductor laser in the present application is provided with a first surface and a second surface arranged along a first direction, the first surface is provided with a first mounting surface, a second mounting surface and a third mounting surface arranged in sequence along a second direction perpendicular to the first direction, and the distance between the second mounting surface and the second surface is greater than the distance between the first mounting surface and the second surface and the distance between the third mounting surface and the second surface, that is, the second mounting surface is provided to protrude relative to the first mounting surface and the third mounting surface toward a side away from the second surface. Through this structure, the laser unit, the electrode unit and the cover body can be installed on mounting surfaces of different heights. On the one hand, the side wall of the cover body can be sunk along the first direction toward the second surface, so as to expand the size of the side wall of the cover body along the first direction within a limited height, so that the laser unit can be aligned to the middle area of the side wall as much as possible, so as to expand the light spot range of the laser unit; on the other hand, the electrode unit can be sunk along the first direction toward the second surface, and the first mounting surface and the third mounting surface can be sunk toward the second surface relative to the second mounting surface, which can reduce the size of the semiconductor laser along the first direction without increasing the size of the semiconductor laser along the second direction and other directions. Therefore, the volume of the semiconductor laser can be reduced, and the mounting surface after sinking will form a limit platform, which can improve the connection stability of the cover body and the electrode unit with the heat sink. Therefore, the present application can also improve the reliability of the semiconductor laser.

[0069] The semiconductor laser of the present application uses high thermal conductivity ceramic as a substrate, which can be adapted to package laser bar chips of various sizes. High thermal conductivity copper material is used as a heat sink to quickly dissipate heat from the laser chip. A flexible FPC is used at the back end to connect the positive and negative electrodes, which facilitates external electrical connection. The laser chip part is sealed with an outer cover to prevent chip contamination, thereby improving the reliability of the semiconductor laser and obtaining a semiconductor laser with a simple structure, stability and reliability.

[0070] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A heat sink, characterized in that, For a semiconductor laser, the semiconductor laser includes a heat sink, a laser module disposed on the heat sink, and a cover. The heat sink has a first surface and a second surface oppositely disposed along a first direction. The first surface has a first mounting surface, a second mounting surface, and a third mounting surface arranged in sequence along a second direction. The distance between the second mounting surface and the second surface is greater than the distance between the first mounting surface and the second surface and the distance between the third mounting surface and the second surface; Wherein, the first direction is perpendicular to the second direction, and the first direction is the stacking direction of the heat sink and the cover; the second mounting surface is used for mounting a laser unit in the laser module, the first mounting surface is used for mounting an electrode unit in the laser module, and the third mounting surface is used for mounting the cover.

2. The heat sink according to claim 1, wherein Two mounting grooves are formed on the second mounting surface at intervals along a third direction, so as to divide the second mounting surface into an intermediate mounting surface arranged at intervals along the third direction and two side mounting surfaces respectively located on both sides of the intermediate mounting surface; Wherein, the intermediate mounting surface is used for mounting the laser unit, and the side mounting surface is used for connecting an external component; the mounting groove is used for limiting the cover; the third direction is perpendicular to the first direction and the second direction respectively.

3. The heat sink according to claim 2, wherein A first mounting hole is provided on the side mounting surface, and the first mounting hole is used for cooperating with a first mounting post to connect the side mounting surface with the external component.

4. The heat sink according to claim 1, wherein A second mounting hole is provided on the first mounting surface, and the second mounting hole is used for cooperating with a second mounting post to connect the cover with the first mounting surface.

5. A semiconductor laser, characterized in that, The semiconductor laser includes: The heat sink according to any one of claims 1 to 4, a laser module disposed on the heat sink, and a cover; wherein, the laser module includes a laser unit and an electrode unit, the laser unit is disposed on the second mounting surface, one end of the electrode unit is mounted on the first mounting surface, and the other end of the electrode unit extends outside the heat sink along the second direction; the cover covers the laser unit and the one end of the electrode unit.

6. The semiconductor laser according to claim 5, characterized in that, The cover is provided with two first side walls oppositely disposed perpendicular to the third direction; Two mounting grooves are provided on the second mounting surface at intervals along the third direction, and the laser unit is mounted between the two mounting grooves on the second mounting surface; the two first side walls of the cover are respectively limited in the two mounting grooves; Wherein, the third direction is perpendicular to the first direction and the second direction respectively.

7. The semiconductor laser according to claim 6, wherein, The cover is further provided with a second side wall perpendicular to the first side wall and extending along the third direction, and the second side wall is provided with a window; the end of the second side wall facing the heat sink abuts against the third mounting surface.

8. The semiconductor laser according to claim 7, wherein The cover body further has a third side wall perpendicularly connected to the first side wall and the second side wall, and a receiving cavity facing the heat sink is formed between the second side wall and the third side wall. One ends of the laser unit and the electrode unit are arranged in the receiving cavity, and the other ends of the electrode unit are arranged outside the receiving cavity. The third side wall is provided with a third mounting hole; A second mounting hole is arranged on the first mounting surface, and the cover body and the first mounting surface are connected through cooperation of the third mounting hole and the second mounting hole by a second mounting post.

9. The semiconductor laser according to claim 8, wherein, The electrode unit includes: a substrate arranged on the first mounting surface; two electrode plates with opposite polarities and spaced along the third direction, arranged on the substrate. One ends of the electrode plates are insulated from the heat sink and are connected to the electrodes of the laser unit, and the other ends of the electrode plates extend outside the heat sink along the second direction; a bonding area is arranged in the inner region of one end of the electrode plate close to the laser unit for bonding connection between the electrode plate and the corresponding electrode of the laser unit; a fourth mounting hole is arranged between the bonding areas of the two electrode plates, and is located between the third mounting hole and the second mounting hole along the first direction.

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