Mixed gas conveying structure and process equipment of semiconductor device

Abstract

The utility model discloses a mixed gas conveying structure and process equipment of a semiconductor device. The mixed gas conveying structure comprises a base body which is located at a gas inlet of a reaction cavity, a gas breaking plug is inserted into the base body, and a slit is kept between the gas breaking plug and the base body; a plurality of gas breaking holes are formed in the side wall of the gas breaking plug, and second process gas injected into the gas breaking plug is jetted into the slit through the plurality of gas breaking holes in a high-speed jet flow mode so as to be mixed with the first process gas in the slit; and carrying the first process gas into the reaction cavity through the gas outlet of the substrate. Through the mixed gas conveying structure, the mixed gas uniformity of two process gases can be improved, so that the injection speed of the process gases can be increased, and the process efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a mixed gas delivery structure and process equipment for semiconductor devices. Background Art

[0002] In the prior art, the process of atomic layer deposition (ALD) is as follows: first, precursor adsorption is performed, and the first precursor is introduced into the reaction chamber to form a single adsorption layer on the surface of the wafer. Then, pulse cleaning is performed, and the unadsorbed precursor molecules and by-products are cleaned with an inert gas. After that, the reaction generates a thin film, and the second precursor is introduced to chemically react with the first precursor adsorbed on the wafer surface to generate an atomic layer thin film. Finally, the above three steps are repeated, and the thin film is deposited layer by layer by alternating the introduction of the first precursor and the second precursor until the film reaches the desired thickness. It can be seen from the above ALD process that in an extremely short cycle time, the uniformity of precursor adsorption and the speed at which the precursor is injected into the wafer surface each time are two extremely important parameters.

[0003] In addition, the precursors in the equipment are generally divided into three categories: gaseous, liquid or solid. Generally, the deposition process will contain one, two or all three of them. A variety of precursors are input from cylinders through pipelines into the vacuum reaction chamber, and then dispersed onto the wafer surface through a spray plate or other structure for deposition and other process treatments. The quality of the deposited film is closely related to the uniformity of the distribution of the precursor on the wafer surface and the speed at which the precursor is dispersed on the wafer surface. In order to ensure that the precursor is evenly distributed on the wafer surface, it is important that the precursor and the carrier gas are fully mixed. Only when they are fully mixed can the precursor on the wafer surface achieve better uniformity.

[0004] In order to solve the above problems existing in the prior art, there is an urgent need in this field for a mixed gas delivery technology that can improve the mixing uniformity of the two process gases, thereby accelerating the injection speed of the process gases and improving the process efficiency. Utility Model Content

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a mixed gas delivery structure and a process equipment for semiconductor devices, which can improve the mixing uniformity of two process gases, thereby accelerating the injection speed of the process gas and improving the process efficiency.

[0007] Specifically, the above-mentioned mixed gas delivery structure provided according to the first aspect of the present invention includes: a base body, located at the air inlet of the reaction chamber, and a gas-breaking plug is inserted into the inside of the base body, wherein a slit is maintained between the gas-breaking plug and the base body; and the gas-breaking plug, a plurality of gas-breaking holes are provided on its side wall, and the second process gas injected into the gas-breaking plug is sprayed into the slit in the form of a high-speed jet through the plurality of gas-breaking holes to mix with the first process gas in the slit, and carry the first process gas into the reaction chamber through the gas outlet of the base body.

[0008] Furthermore, in some embodiments of the present invention, the annular opening between the gas-breaking plug and the base is a first gas inlet for introducing the first process gas.

[0009] Furthermore, in some embodiments of the present invention, a plurality of air-breaking holes at different heights are distributed on the side wall of the air-breaking plug.

[0010] Furthermore, in some embodiments of the present invention, the gas outlet of the substrate includes a tapered gas outlet channel that is narrow at the top and wide at the bottom, so as to allow the mixed gas of the first process gas and the second process gas to be ejected at high speed.

[0011] Furthermore, in some embodiments of the present invention, the mixed gas delivery structure also includes: a spray assembly, located at the gas outlet of the base, including a spray upper plate and a spray plate, wherein the lower surface of the spray upper plate is a trumpet-shaped lower opening, the spray plate is located below the spray upper plate, and its upper surface is a conical surface, forming a gap channel with the lower surface of the spray upper plate to guide the mixed gas of the first process gas and the second process gas to the edge of the spray plate.

[0012] Furthermore, in some embodiments of the present invention, the slit channels are parallel channels with equal gaps, or special-shaped channels with large gaps in the middle and small gaps at the edges.

[0013] Furthermore, in some embodiments of the present invention, the angle between the lower surface of the spray upper plate and the horizontal plane is in the range of 0 to 7°, and the angle between the upper surface of the spray plate and the horizontal plane is in the range of 0 to 7°.

[0014] Furthermore, in some embodiments of the present invention, a plurality of spray holes are distributed in the spray plate, wherein the plurality of spray holes are arranged in any one of a circular, triangular, and plum blossom array.

[0015] Furthermore, in some embodiments of the present invention, the spray hole includes a straight hole structure, wherein the aperture of the straight hole structure located at the edge of the spray plate is larger than the aperture of the straight hole structure located at the center of the spray plate.

[0016] Furthermore, in some embodiments of the present invention, the spray hole includes a stepped hole structure, which is composed of small holes located in the upper layer and large holes located in the lower layer, wherein the depth of the small holes in the stepped hole structure located at the edge of the spray plate is smaller than the depth of the small holes in the stepped hole structure located in the center of the spray plate.

[0017] In addition, the process equipment of the above-mentioned semiconductor device provided according to the second aspect of the present invention includes: a reaction chamber, which contains wafers for performing a coating process; and the above-mentioned mixed gas delivery structure provided by the first aspect of the present invention, which is arranged at the gas inlet of the reaction chamber, and is used to inject a mixed gas including a first process gas and a second process gas into the reaction chamber to perform the coating process on the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0019] Figure 1 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present utility model is shown;

[0020] Figure 2 A schematic structural diagram of a mixed gas delivery structure provided according to some embodiments of the present utility model is shown;

[0021] Figure 3 Shown Figure 2 A cross-sectional schematic diagram of a gas-breaking plug in the mixed gas delivery structure shown;

[0022] Figure 4A and 4B is a schematic diagram of the gas flow state when the first process gas and the second process gas are mixed in the prior art; and

[0023] Figure 5 A schematic structural diagram of a spray assembly provided according to some embodiments of the present utility model is shown.

[0024] Reference numerals:

[0025] 100 Process equipment for semiconductor devices;

[0026] 110 reaction chamber;

[0027] 111 heating plate;

[0028] 120 cover;

[0029] 130 air extraction port;

[0030] 131 pumping bushing;

[0031] 200 mixed gas conveying structure;

[0032] 210 matrix;

[0033] 211 air outlet channel;

[0034] 220 broken gas plug;

[0035] 221 broken pore;

[0036] 230 slit;

[0037] 231 First Air Inlet;

[0038] 232 uniform air holes;

[0039] 240 first process gas;

[0040] 250 second process gas;

[0041] 260 mixed gas;

[0042] 261 centerline;

[0043] 262 pipelines;

[0044] 300 spray assembly;

[0045] 310 spraying the upper plate;

[0046] 311 lower surface;

[0047] 320 spray plate;

[0048] 321 upper surface;

[0049] 330 Crack Channel;

[0050] 340 horizontal plane;

[0051] 350 spray holes;

[0052] 351 small holes; and

[0053] 352 large hole. DETAILED DESCRIPTION

[0054] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide an in-depth understanding of the present invention, the following description will contain many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0055] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0056] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0057] It is understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0058] As mentioned above, it can be seen from the above-mentioned ALD process that in an extremely short cycle time, the uniformity of precursor adsorption and the speed at which the precursor is injected into the wafer surface each time are two extremely important parameters. In addition, in the process where multiple precursors are input from cylinders through pipelines into the vacuum reaction chamber, and then dispersed onto the wafer surface through a spray plate or other structure for deposition and other process treatments, the quality of the deposited film is closely related to the uniformity of the distribution of the precursor on the wafer surface and the speed at which the precursor is dispersed on the wafer surface. In order to ensure that the precursor is evenly distributed on the wafer surface, it is important that the precursor and the carrier gas are fully mixed. Only when they are fully mixed can the precursor on the wafer surface achieve relatively good uniformity.

[0059] In order to solve the above-mentioned problems existing in the prior art, the utility model provides a mixed gas delivery structure and a process equipment for semiconductor devices, which can improve the mixing uniformity of two process gases, thereby accelerating the injection speed of the process gas and improving the process efficiency.

[0060] In some non-limiting embodiments, the mixed gas delivery structure provided in the first aspect of the present invention may be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention.

[0061] The following describes the operating principle of the aforementioned mixed gas delivery structure in conjunction with examples of semiconductor device process equipment. Those skilled in the art will appreciate that these examples of semiconductor device process equipment are merely non-limiting implementations of the present invention, intended to clearly demonstrate the main concepts of the present invention and provide specific solutions that facilitate implementation by the public, rather than limiting the full operating mode or functionality of the mixed gas delivery structure. Similarly, the mixed gas delivery structure is merely a non-limiting implementation of the present invention and does not limit the configuration of these semiconductor device process equipment.

[0062] Please see Figure 1 , Figure 1 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present invention is shown.

[0063] like Figure 1As shown, in some embodiments of the present invention, the process equipment 100 of the semiconductor device may mainly include a reaction chamber 110 and a mixed gas delivery structure 200. A heating plate 111 may be provided inside the reaction chamber 110 for holding wafers and heating the wafers to achieve the temperature conditions required for the coating process. A mixed gas delivery structure 200 is provided at the air inlet above the reaction chamber 110, which can be used to inject a mixed gas including a first process gas and a second process gas into the reaction chamber 110. In addition, a spray assembly 300 may be connected below the mixed gas delivery structure 200. The process gas required for the coating process can be introduced into the reaction chamber 110 through the spray assembly 300 so that the coating process can be performed on the surface of the wafer.

[0064] Optionally, the spray assembly 300 can be removably mechanically fixed by the cover plate 120. After the coating process is completed in the reaction chamber 110, the reaction gas in the reaction chamber 110 can be extracted through the exhaust port 130. Furthermore, an exhaust bushing 131 can be provided above the heating plate 111 to maintain a uniform distribution of the reaction gas above the wafer during the exhaust process, thereby avoiding uneven distribution of the reaction gas flow during the exhaust process, which may affect the final coating effect.

[0065] Next, please refer to Figure 2 and Figure 3 , Figure 2 A schematic structural diagram of a mixed gas delivery structure provided according to some embodiments of the present utility model is shown. Figure 3 Shown Figure 2 The cross-sectional schematic diagram of the gas-breaking plug in the mixed gas delivery structure shown.

[0066] like Figure 2 As shown, in some embodiments of the present invention, the mixed gas delivery structure 200 may mainly include a base 210 and a gas breaker 220. Specifically, the base 210 may be located at the gas inlet of the reaction chamber 110, and the gas breaker 220 may be inserted into the base 210. A narrow gap 230 is maintained between the gas breaker 220 and the base 210 for accommodating the first process gas 240.

[0067] like Figure 2 and Figure 3 As shown, the sidewall of the gas breaker plug 220 may be provided with a plurality of gas breaker holes 221. A second process gas may be introduced into the center of the gas breaker plug 220. The second process gas 250 injected into the gas breaker plug 220 may be ejected into the slit 230 in the form of a high-speed jet through the plurality of gas breaker holes 221. The second process gas 250 may then mix with the first process gas 240 within the slit 230 and carry the first process gas 240 through the gas outlet of the substrate 210 into the reaction chamber 110 below.

[0068] Optionally, in some embodiments of the present invention, the first process gas may be a chemical source gas adsorbed on the wafer surface for the coating process, such as a precursor gas. The second process gas may be a carrier gas, such as an inert gas, used to carry the chemical source gas into the reaction chamber 110.

[0069] like Figure 2 As shown, the annular opening between the gas plug 220 and the substrate 210 is a first gas inlet 231, which can be used to introduce a first process gas 240 (eg, a chemical source gas). Figure 3 As shown, in the gas plug 220, a row of uniform air holes 232 can be provided below the first air inlet 231 to extend the circulation time of the first process gas 240 in the first air inlet 231, allowing the first process gas 240 to disperse in the first air inlet 231 and first be evenly distributed in the annular first air inlet 231. The gas then flows downward into the slit 230, thereby evenly distributing the first process gas 240 throughout the annular slit 230 without concentrating in a particular area.

[0070] like Figure 2 As shown, optionally, the sidewall of the gas breaker plug 220 can be distributed with multiple gas breaker holes 221 of multiple heights. When the first process gas 240 (for example, chemical source gas) is evenly distributed in the annular slit 230 between the gas breaker plug 220 and the substrate 210, the second process gas 250 (for example, carrier gas) is injected into the gas breaker plug 220. Through the multiple gas breaker holes 221 of multiple heights in the gas breaker plug 220, the second process gas (for example, carrier gas) can be ejected from the gas breaker plug 220 into the slit 230 at multiple heights and in all directions, generating a high-pressure, high-speed jet. This high-speed jet form of the second process gas (for example, carrier gas) can break the original flow state of the first process gas (for example, chemical source gas), so that the two process gases can be more fully mixed, solving the problem of uneven gas mixing in the prior art.

[0071] Specifically, see Figure 4A and 4B , Figure 4A and 4B This is a schematic diagram of the gas flow state when the first process gas and the second process gas are mixed in the prior art.

[0072] In the prior art, the chemical source gas (first process gas 240) is generally in the form of small molecules volatilized from solid or liquid, carried by the carrier gas (second process gas 250), mixed through the pipeline and the spray plate, and finally enters the reaction chamber. Figure 4AAs shown, the mixed gas 260 including the chemical source gas and the carrier gas usually flows in a turbulent manner in the pipeline 262. Macroscopically, the mixed gas 260 is based on the center line 261 in the pipeline 262, and small non-directional flows are carried out in all directions around the center line 261. Figure 4B As shown, the mixed gas 260 in the pipeline 262 is mainly in a collective shape, that is, the mixed gas 260 in the central area of ​​the pipeline 262 is more concentrated, while the mixed gas 260 in the edge area is less distributed. Therefore, if you want to achieve sufficient mixing of the carrier gas (second process gas 250) and the chemical source gas (first process gas 240), you need to break this airflow state. In this embodiment, the second process gas 250 (for example, carrier gas) is sprayed into the first process gas 240 (for example, chemical source gas) in the external slit 230 in the form of a high-speed jet through the gas breaker 220, which can effectively break the turbulent airflow state of the original mixed gas 260 in a collective shape and achieve sufficient mixing of the two gases. Moreover, the long mixing space through the slit 230 can further achieve a more sufficient mixing effect. In this embodiment, the carrier gas can better carry the chemical source only after it is fully mixed with its matching chemical source gas.

[0073] Those skilled in the art will appreciate that the above-described mixing scheme based on carrier gas and chemical source gas is merely a non-limiting embodiment of the present invention, intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is convenient for the public to implement, and is not intended to limit the scope of protection of the present invention. Alternatively, in other embodiments, the first process gas 240 and the second process gas 250 may be two different chemical source gases. Based on the concepts of the present invention, those skilled in the art may also select other different types of gases for mixing to achieve the technical effect of sufficient gas mixing.

[0074] Next, see Figure 5 , Figure 5 A schematic structural diagram of a spray assembly provided according to some embodiments of the present utility model is shown.

[0075] like Figure 5 As shown, in some embodiments of the present invention, the gas outlet of the substrate 210 may further include a tapered gas outlet channel 211 that is narrow at the top and wide at the bottom, for high-speed ejection of a mixed gas 260 of the first process gas 240 and the second process gas 250. The tapered gas outlet channel 211, which is narrow at the top and wide at the bottom, can increase the ejection area and ejection speed of the high-pressure mixed gas 260.

[0076] like Figure 5As shown, in some optional embodiments, the mixed gas delivery structure 200 may further include a spray assembly 300. The spray assembly 300 may be located at the gas outlet of the gas outlet channel 211 of the base 210, and may include a spray upper plate 310 and a spray plate 320, wherein the lower surface 311 of the spray upper plate 310 may be a trumpet-shaped lower opening. The spray plate 320 may be located below the spray upper plate 310, and its upper surface 321 may be a conical surface, forming a slit channel 330 with the lower surface 311 of the spray upper plate 310. The mixed gas 260 of the first process gas 240 and the second process gas 250 may be directed to the edge of the spray plate 320 via the slit channel 330.

[0077] Alternatively, the slit channels 330 may be parallel channels with equal gaps. In this case, the angles between the lower surface 311 of the upper spray plate 310 and the upper surface 321 of the spray plate 320 and the horizontal plane 340 are the same. In other embodiments, the slit channels 330 may also be shaped channels with a larger gap in the middle and smaller gaps at the edges. In this case, the angles between the lower surface 311 of the upper spray plate 310 and the upper surface 321 of the spray plate 320 and the horizontal plane 340 may be different.

[0078] Furthermore, the angle range between the lower surface 311 of the spray plate 310 and the horizontal plane 340 is preferably in the range of 0 to 7°, and the angle range between the upper surface 321 of the spray plate 320 and the horizontal plane 340 can also preferably be in the range of 0 to 7°, thereby ensuring that the first process gas 240 and the second process gas 250 can continue to have time to further fully mix, and at the same time, it can also ensure that the mixed gas 260 can be smoothly guided to the edge of the spray plate 320.

[0079] like Figure 5 As shown, in some embodiments of the present invention, a plurality of spray holes 350 may be distributed in the spray plate 320. The plurality of spray holes 350 may be arranged in various arrays according to process requirements. For example, the spray holes 350 may be arranged in any of a circular, triangular, or plum blossom array.

[0080] Furthermore, in some embodiments of the present invention, the structure and / or aperture of the spray hole 350 can be comprehensively designed to achieve a spraying mode in which the flow resistance in the middle area of ​​the spray plate 320 is large and the flow resistance at its edge is small.

[0081] Specifically, optionally, the spray hole 350 may include a straight hole structure, wherein the aperture of the straight hole structure located at the edge of the spray plate 320 may be larger than the aperture of the straight hole structure located at the center of the spray plate 320, thereby realizing the above-mentioned spraying mode in which the flow resistance in the middle area of ​​the spray plate 320 is large and the flow resistance at its edge is small.

[0082] Alternatively, in other embodiments, as Figure 5 As shown in the partially enlarged area I in FIG, the spray hole 350 may include a stepped hole structure. The stepped hole structure may be composed of small holes 351 located in an upper layer and large holes 352 located in a lower layer. The depth of the small holes 351 in the stepped hole structure located at the edge of the spray plate 320 is less than the depth of the small holes 351 in the stepped hole structure located in the center of the spray plate 320, thereby achieving a spraying method in which the flow resistance in the middle area of ​​the spray plate 320 is large and the flow resistance at its edges is small.

[0083] Through the above-mentioned bamboo hat-shaped spray assembly 300 structure, the mixed gas 260 of the first process gas 240 (for example, chemical source gas) and the second process gas 250 (for example, carrier gas) can be quickly dispersed above the spray plate 320 and quickly reach the hard-to-reach position at the edge of the spray plate 320, so as to achieve the purpose of rapid injection onto the wafer surface. In addition, through the structure and / or aperture design of the spray holes 350 on the spray plate 320, the flow resistance of the central area and edge areas of the spray plate 320 can be adjusted, so that the mixed process gas can be quickly and evenly sprayed onto the wafer for the coating process, solving the problems of slow process gas delivery speed and uneven spraying on the wafer in the prior art.

[0084] In summary, the present invention provides a mixed gas delivery structure and a process equipment for semiconductor devices, which can improve the mixing uniformity of two process gases, thereby accelerating the injection speed of the process gases and improving process efficiency.

[0085] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A mixed gas delivery structure, characterized in that: include: a substrate, located at the gas inlet of the reaction chamber, with a gas-breaking plug inserted into the interior thereof, wherein a narrow gap is maintained between the gas-breaking plug and the substrate; and The gas breaker plug has a plurality of gas breaker holes on its side wall. The second process gas injected into the gas breaker plug is ejected into the slit in the form of a high-speed jet through the plurality of gas breaker holes to mix with the first process gas in the slit and carry the first process gas into the reaction chamber through the gas outlet of the substrate.

2. The mixed gas delivery structure according to claim 1, characterized in that: The annular opening between the gas-breaking plug and the base body is a first gas inlet, which is used to introduce the first process gas.

3. The mixed gas delivery structure according to claim 1, characterized in that: A plurality of air-breaking holes with different heights are distributed on the side wall of the air-breaking plug.

4. The mixed gas delivery structure according to claim 1, characterized in that: The gas outlet of the substrate includes a tapered gas outlet channel that is narrow at the top and wide at the bottom, so as to allow the mixed gas of the first process gas and the second process gas to be ejected at high speed.

5. The mixed gas delivery structure according to claim 1, characterized in that: Also includes: The spray assembly is located at the gas outlet of the substrate and includes a spray upper plate and a spray plate, wherein the lower surface of the spray upper plate is a trumpet-shaped lower opening, the spray plate is located below the spray upper plate, and its upper surface is a conical surface, forming a gap channel with the lower surface of the spray upper plate to guide the mixed gas of the first process gas and the second process gas to the edge of the spray plate.

6. The mixed gas delivery structure according to claim 5, characterized in that: The slotted channels are parallel channels with equal gaps, or special-shaped channels with large gaps in the middle and small gaps at the edges.

7. The mixed gas delivery structure according to claim 5, characterized in that: The included angle between the lower surface of the spray upper plate and the horizontal plane is in the range of 0 to 7 degrees, and the included angle between the upper surface of the spray plate and the horizontal plane is in the range of 0 to 7 degrees.

8. The mixed gas delivery structure according to claim 5, characterized in that: A plurality of spray holes are distributed in the spray plate, wherein the plurality of spray holes are arranged in any one of a circular, triangular, and plum blossom array form.

9. The mixed gas delivery structure according to claim 8, characterized in that: The spray holes include a straight hole structure, wherein the hole diameter of the straight hole structure located at the edge of the spray plate is larger than the hole diameter of the straight hole structure located at the center of the spray plate.

10. The mixed gas delivery structure according to claim 8 or 9, characterized in that: The spray hole includes a stepped hole structure, which is composed of small holes located in the upper layer and large holes located in the lower layer, wherein the depth of the small holes in the stepped hole structure located at the edge of the spray plate is less than the depth of the small holes in the stepped hole structure located in the center of the spray plate.

11. A process equipment for a semiconductor device, characterized in that: include: A reaction chamber, which holds wafers and is used for the coating process; as well as The mixed gas delivery structure according to any one of claims 1 to 10 is provided at the gas inlet of the reaction chamber, and is used to inject a mixed gas including a first process gas and a second process gas into the reaction chamber to perform the coating process on the wafer surface.

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