Probe assembly, probe mechanism and wafer testing mechanism

Abstract

The utility model discloses a probe assembly, probe mechanism and wafer test mechanism wherein the probe assembly comprises a detection structure, a high voltage device, a heat insulation protection member, a support structure and an adapter, the detection structure comprises a first operation portion, a second operation portion and a third operation portion which are connected in sequence, the high voltage device is electrically connected with one end portion of the detection structure, and the heat insulation protection member is electrically connected with the other end portion of the detection structure. High-voltage current is provided for the detection structure; the heat insulation protection piece is partially arranged on the peripheral side of a first operation part of the detection structure and partially arranged on the peripheral side of a second operation part of the detection structure. The supporting structure is arranged on the peripheral side of the third working part of the detection structure, and the adapter is connected between the heat insulation protection piece and the supporting structure. According to the probe assembly, the heat insulation protection part is added to the probe assembly, so that when the probe assembly works, due to the heat insulation effect of the heat insulation protection part, heat transmitted to the rear end of the probe assembly is greatly reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to wafer test technical field especially, relate to a kind of probe subassembly, probe mechanism and wafer test mechanism, wherein, probe mechanism includes probe subassembly, and wafer test mechanism includes probe mechanism. BACKGROUND

[0002] The high-temperature test of wafer is to ensure the reliability and stability of semiconductor products under various extreme temperature environments, and the extreme value of high-temperature test is set very high because semiconductor products may encounter extreme temperature conditions in actual application, especially in the fields of aerospace, automotive electronics, military, photovoltaic, industrial automation, etc. These use environments may far exceed daily use conditions, therefore, through high-temperature test, these conditions can be simulated to ensure that semiconductor products (such as chips) formed by wafer processing can still work normally under extreme environments.

[0003] With the continuous development of semiconductor technology, in order to ensure that the chip can still work smoothly under extreme environment, therefore, the temperature range selected by high-temperature test has increased, but the existing probe base is only suitable for 100℃-200℃ temperature, if the environmental temperature used for testing is higher, the probe base cannot work normally, so the probe base cannot accurately detect the wafer, that is, the quality and stability of subsequent products cannot be accurately evaluated. SUMMARY

[0004] Therefore, the present application provides a probe subassembly, a probe mechanism and a wafer test mechanism, which improve the structural features of the probe subassembly to solve the above technical problems.

[0005] The first aspect of the present application provides a probe subassembly, which includes a detection structure, a high-voltage device, a heat insulation protection piece, a support structure and an adapter. The detection structure includes a first operation part, a second operation part and a third operation part connected in sequence. The high-voltage device is electrically connected to one end of the detection structure to provide high-voltage current for the detection structure. The heat insulation protection piece is partially arranged on the outer periphery of the first operation part of the detection structure and partially arranged on the outer periphery of the second operation part of the detection structure. The support structure is arranged on the outer periphery of the third operation part of the detection structure, and the adapter is connected between the heat insulation protection piece and the support structure.

[0006] In the present application, in order to avoid the detection structure from being fused due to contact with the support structure, a heat insulation protective member is arranged at the outer peripheral side of the first working part of the detection structure. In this way, when the probe assembly contacts the target platform, heat is transferred along the heat insulation protective member, the adapter, and the support structure in sequence. At this time, due to the heat insulation performance of the heat insulation protective member, most of the heat is blocked by the heat insulation protective member and cannot continue to be transferred downward. That is, only a small amount of heat continues to be sequentially transferred to the adapter and the support structure. In this way, the amount of heat transferred to the support structure is greatly reduced. Therefore, when the probe assembly is working, the temperature of the support structure at the end thereof can be in a low-temperature state. At this time, when the detection assembly with a low melting point contacts the support structure, the detection assembly will not be fused, thereby ensuring the working effect of the probe assembly and improving the structural stability and service life of the probe assembly.

[0007] The second aspect of the present application provides a probe mechanism. The probe mechanism comprises a base, a mounting seat, a bellows, a probe assembly, and a high-voltage electrode protection assembly. The mounting seat comprises a first mounting part and a second mounting part connected with each other. The extension direction of the first mounting part intersects with the second mounting part. The first mounting part is provided with a first through hole, and the second mounting part is provided with a second through hole. The first through hole is in communication with the second through hole. The first mounting part has a first connecting end and a second connecting end arranged oppositely. The first connecting end is connected with the base in a lifting manner. One end of the bellows is connected with the second connecting end of the first mounting part. The probe assembly is the probe assembly in the first aspect of the present application. The support structure of the probe assembly is connected with the second connecting end of the first mounting part. The bellows is located at the outer peripheral side of the probe assembly. The high-voltage electrode protection assembly comprises a cover body and a sealing ring. The cover body comprises a high-voltage protection cover and an electrode extension pipe. The sealing ring is connected with the opposite ends of the electrode extension pipe. The high-voltage device comprises a high-voltage connecting part and a high-voltage discharging part connected with each other. The high-voltage protection cover covers the high-voltage connecting part, and the electrode extension pipe covers the high-voltage discharging part. The electrode extension pipe is connected with the second mounting part. The high-voltage discharging part is electrically connected with the third working part in sequence through the second through hole and the first through hole.

[0008] The main beneficial effects of the second aspect of the present application are mainly derived from the first aspect of the present application. Therefore, the main beneficial effects of the second aspect of the present application are the same as those of the first aspect of the present application, which will not be repeated here.

[0009] In addition, in the present application, the base is used to connect the target platform, and the mounting seat is used to connect the base to drive the probe assembly to move up and down along the third direction shown in the figure. The bellows is used to connect the target platform and the mounting seat. The bellows has a deformation ability. When the mounting seat moves up and down relative to the base along the third direction, the bellows can adaptively deform to correspondingly adjust the shape of the detection working space to adapt to the position of the probe assembly. The electrode protection assembly is used to cover the high-voltage device and forms the detection working space together with the bellows after the bellows connects the target platform.

[0010] The third aspect of the embodiments of the present application provides a wafer testing mechanism, the wafer testing mechanism comprising a target platform and a probe mechanism, wherein the probe mechanism is the probe mechanism in the second aspect of the embodiments of the present application, a base is connected to the target platform, and the probe has a first position and a second position relative to the target platform; when the mounting base moves up and down along the height direction of the base, the probe moves to the first position or the second position along with the mounting base.

[0011] Since the beneficial effects of the third aspect of the embodiments of the present application mainly come from the first aspect of the embodiments of the present application, the main beneficial effects of the third aspect of the embodiments of the present application are described with reference to the beneficial effects of the first aspect of the embodiments of the present application, which will not be described here.

[0012] In addition, it should be noted that, in the present application, when the probe is at the first position relative to the target platform, the probe does not perform detection work on the target wafer, and the probe is away from the target platform, at this time, the target wafer can be placed on the target platform, or the target wafer on the target platform is replaced; when the target wafer is placed, the probe moves from the first position to the second position relative to the target platform through the mounting base, at this time, the probe contacts the target wafer and can perform detection work on the target wafer.

[0013] In order to make the above objects, characteristics and advantages of the present application more obvious and easy to understand, the following embodiments of the present application are described in detail below, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0014] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor.

[0015] Figure 1 Fig. 1 is a schematic structural diagram of a wafer testing mechanism in the present application;

[0016] Figure 2 Fig. 2 is a schematic structural diagram of the probe mechanism in the present application; Figure 1 Fig. 3 is a schematic structural diagram of the probe mechanism in the present application when the probe is at the second position relative to the target platform;

[0017] Figure 3 Fig. 4 is a schematic structural diagram of a probe mechanism in the present application;

[0018] Figure 4 Fig. 5 is an exploded view of the main structure in the present application; Figure 3

[0019] Fig. 6 is a schematic structural diagram of the main structure in the present application; Figure 5 Figure 4 ​Further exploded view of the midsole;

[0020] Figure 6 For Figure 4 Further exploded view of the mid probe assembly;

[0021] Figure 7 For Figure 3 Bottom view of the mid probe assembly;

[0022] Figure 8 For Figure 7 Sectional view along A-A;

[0023] Figure 9 For Figure 8 Enlarged view of A in the mid;

[0024] Figure 10 For Figure 8 Enlarged view of B in the mid;

[0025] Figure 11 For Figure 8 Enlarged view of C in the mid;

[0026] Figure 12 For Figure 8 Enlarged view of D in the mid;

[0027] Figure 13 For Figure 4 Lateral view of the mid probe assembly (excluding high voltage device);

[0028] Figure 14 For Figure 13 Sectional view along B-B;

[0029] Figure 15 For Figure 4 Further exploded view of the high voltage electrode protection assembly in the mid;

[0030] Figure 16 For Figure 4 Bottom view of the high voltage electrode protection assembly in the mid;

[0031] Figure 17 For Figure 16 Sectional view along C-C.

[0032] Reference signs:

[0033] 1000-wafer testing mechanism, 1-target platform, 3-target wafer, 2-probe mechanism, 10-base, 11-first sub-base assembly, 110-first sub-base, 111-lifting connecting part, 112-lifting slide rail, 12-second sub-base assembly, 120-second sub-base, 121-flat connecting part, 122-adjusting slide rail, 13-third sub-base assembly, 130-third sub-base, 131-reversing connecting part, 132-reversing slide rail, 20-mounting base, 21-first mounting part, 210-first through hole, 211-first connecting end, 212-second connecting end, 22-second mounting part, 220-second through hole, 30-bellow, 40-probe assembly, 41-probing structure, 41a-first working part, 41b-second working part, 41c-third working part, 411-probe clamp, 412-first connecting hole, 413-first positioning hole, 414-first positioning member, 416-second connecting hole, 417-second positioning hole, 418-second positioning member, 419-probe, 419a-probing end, 419b-continuous end, 420-wire, 42-high-voltage device, 421-high-voltage continuous part, 422-high-voltage discharging part, 43-heat insulation protection member, 44-supporting structure, 440-observation through hole, 45-adapter, 46-mounting channel, 47-heat insulation tube group, 471-first heat insulation sub-tube, 472-second heat insulation sub-tube, 473-third heat insulation sub-tube, 48-clamp, 50-high-voltage electrode protection assembly, 51-cover, 510-electrode extension tube, 511-high-voltage protection cover, 52-sealing ring;

[0034] X-first direction, Y-second direction, Z-third direction. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme of the embodiments of the present application will be described clearly and completely below with reference to the drawings of the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work should fall within the scope of protection of the present application.

[0036] Unless otherwise defined, technical terms or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. As used herein, the articles "a", "an" or "the" preceding an element or object are intended to be nonrestrictive regarding the number of instances of the element or object unless otherwise indicated. Thus, for example, reference to "the element" or "the object" will not be construed as a reference to only an individual or singular instance of the element or object, unless explicitly indicated as such. The term "comprising" or "containing" or "including" or "having" or "comprises" or "contains" or "includes" or "has" or variants thereof, means that the element or object preceding the term is present, but does not exclude the presence of other elements or objects. The term "connected" or "coupled" or variants thereof, means that the elements or objects are electrically connected or coupled, whether directly or indirectly.

[0037] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive of other embodiments. It is expressly understood that the embodiments described herein are merely examples from a potentially infinite number of embodiments that serve the same or similar purposes.

[0038] The high temperature test of the wafer is to ensure the reliability and stability of the semiconductor product under various extreme temperature environments. The high temperature test is set to a very high value because the semiconductor product may encounter extreme temperature conditions in actual application, especially in the fields of aerospace, automotive electronics, military, photovoltaic, industrial automation, etc. These use environments may be far beyond the daily use conditions. Therefore, through the high temperature test, these conditions can be simulated to ensure that the semiconductor product (such as a chip) formed by the wafer can still work normally under extreme environments.

[0039] With the continuous development of semiconductor technology, in order to ensure that the chip can still work smoothly under extreme environments, the temperature range selected for the wafer high temperature test has increased. Therefore, when the wafer is tested at high temperature, the test environment needs to provide a higher high temperature extreme value, so as to ensure that the temperature range in the test environment can cover the temperature range in the use environment required by the chip. The high temperature extreme value needs to be higher than the temperature extreme value in the use environment required by the chip in the above-mentioned fields. In this way, once the wafer can work normally in the high temperature test environment, the chip (and a derived semiconductor product) formed by the wafer can normally perform electrical work in the use environment in the above-mentioned fields.

[0040] However, in the existing wafer test equipment, the probe card is only suitable for a test environment of 100-200℃. If the test environment temperature is higher, the probe card cannot work normally, so that the probe card cannot accurately obtain the tolerance of the wafer, that is, the quality and stability of the subsequent product cannot be accurately evaluated.

[0041] The accompanying drawings, which are incorporated herein by reference, are used to illustrate the embodiments of the present application. Figure 1 To the accompanying drawings Figure 17 The technical solutions in the embodiments of the present application are described clearly and completely.

[0042] Please refer to Figure 1 and Figure 2 The present application provides a wafer testing mechanism 1000, which comprises a target platform 1 and a probe mechanism 2, wherein the base 10 of the probe mechanism 2 is connected to the target platform 1, and the probe 419 has a first position and a second position relative to the target platform 1, and when the mounting seat 20 moves up and down along the height direction of the base 10, the probe 419 moves to the first position or the second position with the mounting seat 20.

[0043] It should be noted that when the probe 419 is at the first position relative to the target platform 1, the probe 419 does not perform detection work on the target wafer 3, and the probe 419 is away from the target platform 1, at this time, the target wafer 3 can be placed on the target platform 1, or the target wafer 3 on the target platform 1 can be replaced; when the target wafer 3 is placed, the probe 419 moves from the first position to the second position relative to the target platform 1 through the mounting seat 20, at this time, the probe 419 contacts the target wafer 3, and can perform detection work on the target wafer 3.

[0044] Among them, Figure 2 The relative position relationship between the probe assembly 40 and the target platform 1 when the probe 419 is at the second position relative to the target platform 1 is schematically shown, specifically, the probe 419 abuts against the target wafer 3 placed on the target platform 1 to perform subsequent electrical detection (such as large current detection, high voltage detection, direct current detection, etc.) on the target wafer 3, so as to evaluate the electrical resistance of the chip or other semiconductor products processed from the wafer.

[0045] Please refer to Figure 3 , Figure 4 , and Figures 15 to 17The application further provides a probe mechanism 2 used in the wafer testing mechanism 1000, which comprises a base 10, a mounting seat 20, a bellows 30, a probe assembly 40 and a high-voltage electrode protection assembly 50. The mounting seat 20 comprises a first mounting part 21 and a second mounting part 22 connected with each other, and the extension direction (i.e. the third direction Z in the figure) of the first mounting part 21 intersects the second mounting part 22. The first mounting part 21 is provided with a first through hole 210, and the second mounting part 22 is provided with a second through hole 220. The first through hole 210 is communicated with the second through hole 220. The first mounting part 21 has a first connecting end 211 and a second connecting end 212 arranged oppositely, and the first connecting end 211 is connected with the base 10 in an up-down manner. One end of the bellows 30 is connected with the second connecting end 212 of the first mounting part 21. The probe assembly 40 is the probe assembly 40 in the first aspect of the application, and the support structure 44 of the probe assembly 40 is connected with the second connecting end 212 of the first mounting part 21. The bellows 30 is located at the outer circumferential side of the probe assembly 40. The high-voltage electrode protection assembly 50 comprises a cover body 51 and a sealing ring 52. The cover body 51 comprises a high-voltage protection cover 511 and an electrode extension pipe 510, and the sealing ring 52 is connected with the opposite two ends of the electrode extension pipe 510. The high-voltage device 42 comprises a high-voltage connecting part 421 and a high-voltage discharging part 422 connected with each other. The high-voltage protection cover 511 covers the high-voltage connecting part 421, and the electrode extension pipe 510 covers the high-voltage discharging part 422. The electrode extension pipe 510 is connected with the second mounting part 22, and the high-voltage discharging part 422 is electrically connected with the third working part 41c in sequence through the second through hole 220 and the first through hole 210.

[0046] In the probe mechanism 2, the base 10 is used to connect the target platform 1, the mounting seat 20 is used to connect the base 10 to drive the probe assembly 40 to move up and down along the third direction Z, the bellows 30 is used to connect the target platform 1 and the mounting seat 20, and the bellows 30 has a deformation ability. When the mounting seat 20 moves up and down along the third direction Z relative to the base 10, the bellows 30 can adaptively deform to correspondingly adjust the shape of the detection working space according to the position of the probe assembly 40. The electrode protection assembly is used to cover the high-voltage device 42 and, after the bellows 30 is connected with the target platform 1, forms the detection working space together with the bellows 30.

[0047] It should be noted that when the probe 419 performs detection on the target wafer 3, the two ends of the bellows 30 need to be connected to the target platform 1 and the mounting seat 20 respectively, and the target wafer 3 corresponding to the detection of the probe 419 in the probe mechanism 2 is located inside the pipeline of the bellows 30, that is, the bellows 30 and the high-voltage electrode protection assembly 50 are connected to form a detection operation space isolated from the outside world, and the probe 419 can move with the movement of the mounting seat 20 to contact or move away from the target wafer 3. When the probe 419 performs detection on the target wafer 3, the detection operation space needs to be in a vacuum state to avoid the influence of oxygen, impurities and the like in the air on the accuracy of the detection of the target wafer 3. Therefore, the opposite ends of the electrode extension pipe 510 are provided with sealing rings 52 to ensure the air tightness of the connection between the high-voltage protection cover 511, the electrode extension pipe 510 and the mounting seat 20. When the bellows 30 is connected to the mounting seat 20, the air tightness of the connection between the two can also be ensured through processes such as hot melting and sleeving. In this way, as described above, the air tightness of the detection operation space is ensured. When the probe 419 performs detection on the target wafer 3, due to the arrangement of the sealing ring 52, it is extremely difficult for gas to enter the detection operation space through the connection between the high-voltage protection cover 511 and the electrode extension pipe 510 and the connection between the electrode extension pipe 510 and the heat preservation pipe, thereby ensuring the working environment of the probe 419 for detecting the target wafer 3.

[0048] It should be understood that the high-voltage protection cover 511 is used to cover the high-voltage connection part 421 of the high-voltage device 42, and the electrode extension pipe 510 is used to cover the high-voltage discharge part 422 of the high-voltage device 42. In this way, the risk of safety accidents caused by leakage of the high-voltage device 42 can be avoided. The separate arrangement of the electrode extension pipe 510 and the high-voltage protection cover 511 facilitates the assembly of the cover body 51 and the high-voltage device 42. At the same time, the arrangement of the electrode extension pipe 510 can also reduce the connection difficulty of the high-voltage discharge part 422 connected to the second through hole 220 through the electric connection wire 420, that is, it can reduce the mutual interference between the high-voltage device 42 and the mounting seat 20, and also ensure the stable electrical connection between the high-voltage device 42 and the probe assembly 40.

[0049] Further, in some embodiments, the heat insulation protection piece 43 is a ceramic piece. Since ceramic has a high melting point, good thermal stability, chemical stability and corrosion resistance, and also exhibits good electrical insulation, when the heat insulation protection piece 43 is a ceramic piece, the heat insulation performance of the heat insulation protection piece 43 can be ensured, and the insulation performance of the heat insulation protection piece 43 can also be ensured to avoid the heat insulation protection piece 43 being broken down by high-voltage electrification and causing the probe mechanism 2 to leak. In this way, the heat insulation effect of the heat insulation protection piece 43 is ensured, and the safety of the probe mechanism 2 in the electrified state is also ensured to a certain extent.

[0050] In addition, the ceramic has a low density and light weight, and the ceramic heat insulation protection member 43 can reduce the self weight of the heat insulation protection member 43, so that the displacement and deformation of the heat insulation protection member 43 due to the self weight can be reduced.

[0051] Please refer to Figure 3 and Figure 4 In some embodiments, the high-voltage protection cover 511 and the electrode extension tube 510 extend in the third direction Z of the probe mechanism 2, and the high-voltage protection cover 511 and the electrode extension tube 510 are sequentially arranged along the third direction Z of the probe assembly 40. The bellows 30 extends in the first direction X of the probe mechanism 2 to be able to adapt to the target platform 1. In this way, the high-voltage device 42 is adapted to the high-voltage protection assembly and extends in the third direction Z of the probe mechanism 2, so as to reduce the size of the probe mechanism 2 in the first direction X. The extension direction of the target platform 1 is parallel to the first direction X of the probe mechanism 2. Therefore, the arrangement is in line with the operation habit of the user and can reduce the mutual interference between the components when the user uses the probe mechanism 2.

[0052] In addition, other operation mechanisms can be arranged in the wafer test mechanism 1000 in the extension direction of the target platform 1. In the above embodiments, the size of the probe mechanism 2 in the first direction X is reduced, which is beneficial to reasonably plan the positions of the operation mechanisms in the wafer test mechanism 1000, so as to further reduce the size of the wafer test mechanism 1000 in the extension direction of the target platform 1, and then reduce the floor area of the wafer test mechanism 1000.

[0053] Please refer to Figure 4 and Figure 5 Further, in some embodiments, the probe mechanism 2 further comprises a lifting slide rail 112 mounted on the base 10, and the mounting seat 20 is connected to the lifting slide rail 112. In this way, the mounting seat 20 is connected to the base 10 in a lifting manner, and the user can adjust the relative position of the probe 419 relative to the target platform 1 by lifting the mounting seat 20 relative to the base 10.

[0054] In some embodiments, the lifting slide rail 112 comprises a screw rod and a sliding piece, and the mounting seat 20 is connected to the sliding piece. The screw rod is rotationally connected to the base 10, and the screw rod is threadedly connected to the sliding piece. By rotating the screw rod, the position of the sliding piece relative to the screw rod can be adjusted, so as to adjust the position of the mounting seat 20 relative to the base 10. In this way, the probe 419 moves away from or approaches the target platform 1 along with the movement of the mounting seat 20.

[0055] Please refer to Figure 5In some embodiments, the base 10 comprises a first sub-base assembly 11 and a second sub-base assembly 12, the first sub-base assembly 11 is slidingly connected to the second sub-base assembly 12; the first sub-base assembly 11 comprises a first sub-base 110, a lifting connecting part 111 and a lifting slide rail 112, the lifting slide rail 112 is connected to the first sub-base 110, and the lifting connecting part 111 is slidingly connected to the lifting slide rail 112; the mounting seat 20 is connected to the lifting connecting part 111, and the lifting connecting part 111 can drive the mounting seat 20 to move along the lifting slide rail 112, that is, the lifting connecting part 111 can drive the mounting seat 20 to move along the third direction Z of the probe assembly 40;

[0056] The second sub-base assembly 12 comprises a second sub-base 120, a planar connecting part 121 and an adjusting slide rail 122, the adjusting slide rail 122 is connected to the second sub-base 120, and the planar connecting part 121 is connected to the adjusting slide rail 122; the first sub-base 110 is connected to the second sub-base 120, and when the second sub-base 120 slides along the adjusting slide rail 122, the second sub-base 120 drives the first sub-base 110 to move, wherein the planar connecting part 121 extends along the first direction X and the second direction Y of the probe assembly 40, and the adjusting slide rail 122 extends along the second direction Y of the probe assembly 40, so that the second sub-base 120 drives the first sub-base 110 (or the first sub-base assembly 11) to move along the second direction Y of the probe assembly 40; since the probe assembly 40 is connected to the mounting seat 20, the probe assembly 40 can drive the mounting seat 20 to move along the third direction Z of the probe mechanism 2 through the lifting connecting part 111, and the probe assembly 40 can also move along the second direction Y of the probe mechanism 2 through the planar connecting part 121.

[0057] Further, in some embodiments, the base 10 further comprises a third sub-base assembly 13, the third sub-base assembly 13 comprises a third sub-base 130, a reversing connecting part 131 and a reversing slide rail 132, the reversing slide rail 132 is connected to the third sub-base 130, and the reversing connecting part 131 is slidingly connected to the reversing slide rail 132, wherein the reversing connecting part 131 extends along the first direction X and the second direction Y of the probe assembly 40, and the reversing slide rail 132 extends along the first direction X of the probe assembly 40; the reversing connecting part 131 is connected to the second sub-base 120 to drive the second sub-base 120 to move along the first direction X of the probe assembly 40, so that the probe assembly 40 can move along the third direction Z of the probe mechanism 2 through the lifting connecting part 111, move along the second direction Y of the probe mechanism 2 through the planar connecting part 121, and move along the first direction X of the probe mechanism 2 through the reversing connecting part 131, thereby adjusting the relative position relationship between the probe 419 and the target platform 1 in multiple directions, and further increasing the flexibility of the probe assembly 40.

[0058] Please refer again Figure 3 andFigure 4 The present application also provides a probe assembly 40 suitable for the above-mentioned probe mechanism 2, which includes a detection structure 41, a high-voltage device 42, a thermal insulation protective member 43, a support structure 44 and an adapter 45. The detection structure 41 includes a first working part 41a, a second working part 41b and a third working part 41c connected in sequence. The high-voltage device 42 is electrically connected to one end of the detection structure 41 to provide high-voltage current for the detection structure 41; the thermal insulation protective member 43 is partially arranged on the outer peripheral side of the first working part 41a of the detection structure 41, and partially arranged on the outer peripheral side of the second working part 41b of the detection structure 41; the support structure 44 is arranged on the outer peripheral side of the third working part 41c of the detection structure 41, and the adapter 45 is connected between the thermal insulation protective member 43 and the support structure 44.

[0059] It should be noted that the detection structure 41 is used for contact detection Figure 2 The target wafer 3 shown in FIG. 4 is a target wafer 3, a high-voltage device 42 is used to generate the high-voltage current required for detection and transmit the high-voltage current to the detection structure 41; the heat-insulating protective member 43, the supporting structure 44 and the adapter 45 are located outside the detection structure 41 to form an external structure capable of driving the detection structure 41 to move. Figure 4 It can be seen that the thermal insulation protective member 43 is exposed on the outer peripheral side of the first working part 41a, the supporting structure 44 is exposed on the outer peripheral side of the third working part 41c, and the adapter 45 is located on the outer peripheral side of the second working part 41b. Since the thermal insulation protective member 43 and the supporting structure 44 are connected as a whole through the adapter 45, parts of the thermal insulation protective member 43 and the supporting structure 44 are located on the outer side of the second working part 41b for connection with the adapter 45.

[0060] It should also be noted that the first working part 41a, the second working part 41b and the third working part 41c are used to illustrate the positions of the thermal insulation protective part 43, the adapter 45 and the support structure 44 in the probe assembly 40 relative to the detection structure 41. The first working part 41a, the second working part 41b and the third working part 41c do not only represent three completely independent working parts, but can also refer to three parts corresponding to different positions in the same individual.

[0061] In the existing embodiment, when the probe mechanism 2 is in operation, the probe assembly 40 is located in the detection operation space. When the target wafer 3 is subjected to high-temperature and high-pressure testing, the target platform 1 is heated. Since the detection operation space is in a vacuum state, heat needs to be transmitted through the mutual contact between solids, that is, when the probe assembly 40 contacts the target platform 1, heat is sequentially transmitted along the first direction X of the probe mechanism 2, and finally the probe assembly 40 is in a high-temperature state. When the support structure 44 is raised to a high-temperature state, once the detection assembly with a low melting point contacts the support structure 44 in a high-temperature state, the detection assembly will be melted, thereby causing the probe assembly 40 to fail in operation.

[0062] In the foregoing embodiment, in order to reduce the occurrence of the above-mentioned situation, a heat insulation protective piece 43 is arranged at the outer peripheral side of the first operation part 41a. In this way, when the probe assembly 40 contacts the target platform 1, heat is sequentially transmitted along the heat insulation protective piece 43, the adapter 45, and the support structure 44. At this time, due to the heat insulation performance of the heat insulation protective piece 43, most of the heat is blocked by the heat insulation protective piece 43 and cannot continue to be transmitted downward. That is, at this time, only a small amount of heat continues to be sequentially transmitted to the adapter 45 and the support structure 44. In this way, the amount of heat transmitted to the support structure 44 is greatly reduced, so that when the probe assembly 40 is in operation, the temperature of the support structure 44 at the end thereof can be in a low-temperature state. At this time, when the detection assembly with a low melting point contacts the support structure 44, the detection assembly will not be melted, thereby ensuring the operation effect of the probe assembly 40 and improving the structural stability and service life of the probe assembly 40.

[0063] Please refer to Figure 4 and Figure 6 In some embodiments, the detection structure 41 includes a probe 419 and a wire 420. The probe 419 includes a detection end 419a and an electrical connection end 419b. One end of the wire 420 is electrically connected to the electrical connection end 419b, and the other end of the wire 420 is electrically connected to the high-voltage device 42. The first operation part 41a, the second operation part 41b, and the third operation part 41c each include a partial segment of the wire 420, and the first operation part 41a includes the probe 419. The probe assembly 40 further includes a mounting channel 46. Along the first direction X of the probe assembly 40, the mounting channel 46 sequentially penetrates the heat insulation protective piece 43, the adapter 45, and the support structure 44. The probe assembly 40 further includes a heat insulation pipe group 47. The heat insulation pipe group 47 is located in the mounting channel 46 and is arranged at the outer peripheral side of the wire 420.

[0064] Specifically, after the heat insulation shield 43, the adapter 45 and the support structure 44 are connected, the mounting channel 46 extending along the first direction X of the probe assembly 40 is formed, the wires 420 are arranged in the mounting channel 46, so that the probes 419 are electrically connected to the high-voltage device 42; the detection ends 419a of the probes 419 are exposed outside the mounting channel 46 to contact the target wafer 3, and the electrical connection ends 419b of the probes 419 are located inside the mounting channel 46 to be electrically connected to the wires 420.

[0065] In the mounting channel 46, the heat insulation pipe group 47 is located at the outer peripheral side of the wires 420. In this way, the arrangement of the heat insulation pipe group 47 can reduce the direct contact area between the wires 420 and the heat insulation shield 43, the adapter 45 and / or the support structure 44, and reduce the occurrence of the melting and damage of the wires 420 due to the contact with the heat insulation shield 43, the adapter 45 and / or the support structure 44. In addition, since the heat insulation pipe group 47 has heat insulation performance, when the heat insulation pipe group 47 contacts the heat insulation shield 43, the adapter 45 and / or the support structure 44, the heat insulation pipe group 47 can also block the heat of the heat insulation shield 43, the adapter 45 and / or the support structure 44 from being transmitted to the wires 420, and the temperature of the heat insulation pipe group 47 itself will not rise excessively, so that the wires 420 will not be melted due to the contact with the heat insulation pipe group 47. That is, the arrangement of the heat insulation pipe group 47 further ensures the stability and service life of the structure of the probe assembly 40.

[0066] In some embodiments, the heat insulation pipe group 47 is a ceramic pipe group. Since ceramic has a high melting point, good thermal stability, chemical stability and corrosion resistance, and also exhibits good electrical insulation, when the heat insulation pipe group 47 is a ceramic pipe group, the heat insulation performance of the heat insulation pipe group 47 can be ensured, and the insulation performance of the heat insulation pipe group 47 can also be ensured to avoid the heat insulation pipe group 47 being punctured by current when high-voltage power is on, so that the probe mechanism 2 is not subject to the leakage phenomenon. In this way, the heat insulation effect of the heat insulation pipe group 47 is ensured, and the use safety of the probe mechanism 2 in the power-on state is also ensured to a certain extent.

[0067] In addition, ceramic has a relatively low density and light material, and the heat insulation pipe group 47 being a ceramic piece is beneficial to reduce the self-weight of the heat insulation pipe group 47. In this way, the displacement and deformation of the electrical connection ends 419b of the probes 419 inside the mounting channel 46 caused by the self-weight of the heat insulation pipe group 47 can be reduced, so that the accuracy of the data of the probe mechanism 2 during the detection operation is affected.

[0068] In some embodiments, the probe 419 is a tungsten needle, which has good electrical conductivity and thermal conductivity, i.e. can meet the requirements of high-voltage power supply for the high-temperature target wafer 3, and can also avoid the accumulation of too much heat, causing the probe 419 to expand and deform. In addition, tungsten has a high melting point and high hardness, and still has good performance under high temperature conditions, and has a low thermal expansion coefficient, so that when the temperature of the tungsten needle changes, the size of the tungsten needle changes little, meeting the requirements of precision work. In summary, the probe 419 is a tungsten needle, which can ensure the high-temperature and high-voltage detection effect of the probe assembly 40 on the target wafer 3, so as to accurately obtain the high-temperature and high-voltage data of the target wafer 3.

[0069] In some embodiments, the probe 419 is an oxidation-resistant component, so as to improve the oxidation resistance of the probe 419. When the probe assembly 40 stops working or is in a non-working state, the probe 419 can prevent oxidation in the atmospheric environment, ensuring the structural stability of the probe 419 itself, so as to ensure the detection performance of the probe assembly 40.

[0070] Please refer to Figure 6 In some embodiments, the support structure 44 is provided with an observation through hole 440, so that when the wire 420 is inserted into the support structure 44, the insertion condition of the wire 420 in the support structure 44 can be known through the observation through hole 440. In addition, since the observation through hole 440 needs to be formed by removing part of the outer wall of the support structure 44, the setting of the observation through hole 440 can also reduce the self-weight of the support structure 44, which is conducive to the lightweight design of the probe assembly 40 as a whole.

[0071] Please refer to Figure 6 、 Figure 13 and Figure 14 In some embodiments, the heat insulation pipe group 47 includes a first heat insulation sub-pipe 471 and a second heat insulation sub-pipe 472, both of which are arranged on the outer circumferential side of the wire 420. Along the extension direction of the wire 420, the first heat insulation sub-pipe 471 and the second heat insulation sub-pipe 472 are arranged in sequence. In this way, the arrangement of the first heat insulation sub-pipe 471 and the second heat insulation sub-pipe 472 can reduce the direct contact area between the wire 420 and the heat insulation protective component 43, and / or the adapter 45, and / or the support structure 44 (i.e. the inner wall of the mounting channel 46), thereby further reducing the occurrence of high-temperature melting of the wire 420 due to direct contact with the heat insulation protective component 43, and / or the adapter 45, and / or the support structure 44 (i.e. the inner wall of the mounting channel 46).

[0072] Additionally, when the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 are relatively hard, if the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 are integrally formed into a large-size heat insulation sub-tube, the large-size heat insulation sub-tube is likely to be brittlely broken during the process of being suspended and moved, for example, when the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 are plastic tubes or ceramic tubes, the large-size heat insulation sub-tube formed by integrally forming the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 is easy to be brittlely broken during the process of being carried or suspended and installed, thus, not only the debris generated by the breaking will affect the normal operation of the probe assembly 40, but also the damage of the large-size heat insulation sub-tube is likely to cause the wire 420 to move, thereby affecting the electrical connection between the wire 420 and the probe 419, and further affecting the normal detection operation of the probe assembly 40.

[0073] Additionally, since the wire 420 is flexible, when the wire 420 is inserted into the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472, the outer wall of the wire 420 is rubbed against the inner wall of the sub-tube, and the wire 420 is deformed. If the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 are integrally formed, when the wire 420 is inserted into the large-size heat insulation sub-tube, the wire 420 is likely to be deformed due to the rubbing between the outer wall of the wire 420 and the inner wall of the sub-tube, which causes the end of the wire 420 to be unable to pass out of the sub-tube, thus, dividing the large-size heat insulation sub-tube into the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 is also conducive to reducing the difficulty of inserting the wire 420 into the sub-tube, and facilitating the assembly operation of the probe assembly 40.

[0074] Please continue to refer to Figure 6 , Figure 13 and Figure 14 In some embodiments, the heat insulation tube group 47 further includes a third heat insulation sub-tube 473, at least part of the first heat insulation sub-tube 471 and at least part of the second heat insulation sub-tube 472 are located on the inner circumferential side of the third heat insulation sub-tube 473, thus, the third heat insulation sub-tube 473 connects the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 together, which limits the freedom degree of the first heat insulation sub-tube 471 and the second heat insulation sub-tube 472 moving along the wire 420 to a certain extent, and at the same time, the heat insulation tube group 47 can be arranged at a predetermined position of the wire 420, such as the middle part of the wire 420, to improve the protection of the wire 420 by the heat insulation tube group 47.

[0075] In addition, while the third thermal insulation tube group 47 connects the first thermal insulation sub-tube 471 and the second thermal insulation sub-tube 472, the third thermal insulation tube group 47 can also isolate the wire 420 located between the first thermal insulation sub-tube 471 and the second thermal insulation sub-tube 472 from the thermal insulation protective part 43, and / or the adapter 45, and / or the support structure 44 (i.e., the inner wall of the installation channel 46), that is, further isolate the wire 420 and the thermal insulation protective part 43, and / or the adapter 45, and / or the support structure 44 (i.e., the inner wall of the installation channel 46), and reduce the direct contact area between the wire 420 and the thermal insulation protective part 43, and / or the adapter 45, and / or the support structure 44 (i.e., the inner wall of the installation channel 46), thereby further avoiding the heat of the thermal insulation protective part 43, and / or the adapter 45, and / or the support structure 44 (i.e., the inner wall of the installation channel 46) from being transferred to the wire 420 and the wire 420 being melted, thereby affecting the stability of the operation of the probe assembly 40.

[0076] It should be noted that, Figure 7 is a top view of the probe mechanism 2, Figure 13 is a side view of the probe assembly 40, Figure 7 and Figure 13 In the Figure 7 From the local enlarged picture, we can see that Figure 7 The section line in is located outside the probe 419, so Figure 8 In the cross-sectional view shown, the probe 419 is not cut; Figure 13 From the local enlarged picture, we can see that Figure 13 The section line in is located on the geometric center line of the probe 419, so Figure 14 In the cross-sectional view shown, the probe 419 is cut, so it should be noted that although Figure 7 and Figures 6 to 9 The corresponding cross-sectional views all illustrate the internal structure of the probe assembly 40 , but due to different cutting positions, the cut structures shown in the corresponding cross-sectional views are different.

[0077] Please refer to Figure 2 In some embodiments, the first working part 41a further includes a probe fixture 411 and a first positioning member 414, and the probe fixture 411 is at least partially inserted into the mounting channel 46; the probe fixture 411 is provided with a first connecting hole 412 and a first positioning hole 413 that are connected to each other, the hole direction of the first connecting hole 412 extends along the first direction X of the probe assembly 40, and the hole direction of the first positioning hole 413 is opened along the second direction Y of the probe assembly 40, wherein the first direction X and the second direction Y form an angle; the electrical connection end 419b of the probe 419 extends into the first connecting hole 412, and the first positioning member 414 extends into the first positioning hole 413 to press the electrical connection end 419b against the inner wall of the probe fixture 411.

[0078] It should be understood that when the probe mechanism 2 is in operation (which can be combined with reference to Figure 6 ), the probe 419 needs to contact the target wafer 3 on the target platform 1 at a high temperature. The target wafer 3 is in a high temperature state due to thermal contact with the target platform 1, so that the probe 419 in contact with the target wafer 3 exchanges heat with the target wafer 3. At this time, the probe 419 will expand in volume due to the increase in its own temperature. If the probe 419 has a moving gap relative to the inner wall of the mounting channel 46, the probe 419 can move a certain distance in the mounting channel 46, so that the detection end 419a of the probe 419 moves relative to the original detection position of the target wafer 3, thereby affecting the accuracy of the data obtained by the probe mechanism 2 in detecting the target wafer 3.

[0079] Therefore, in the above embodiment, the probe 419 is inserted into the inner side of the probe clamp 411 from the first connecting hole 412 of the probe clamp 411 along the first direction X of the probe assembly 40, and is clamped against the inner wall of the probe clamp 411 by the first positioning member 414 along the second direction Y of the probe assembly 40. In this way, the probe 419 is fixed at a position on the inner side of the probe clamp 411. When the probe 419 contacts the target wafer 3, the probe 419 is difficult to move in the positioning channel due to the positioning effect of the probe clamp 411 and the first positioning member 414. Therefore, the probe assembly 40 can accurately detect the target position of the target wafer 3, thereby improving the accuracy of the probe mechanism 2 in detecting the target wafer 3.

[0080] Please refer to Figure 10 and Figure 2 Further, in some embodiments, the probe clamp 411 further comprises a second connecting hole 416 and a second positioning hole 417 in communication. The hole body direction of the second connecting hole 416 extends along the first direction X of the probe assembly 40, and the hole body direction of the second positioning hole 417 is opened along the second direction Y of the probe assembly 40. The first connecting hole 412 and the second connecting hole 416 are opened at opposite ends of the probe clamp 411, and the first positioning hole 413 and the second positioning hole 417 are sequentially distributed along the first direction X of the probe assembly 40. The first operating part 41a further comprises a second positioning member 418. The end of the lead wire 420 extends into the first connecting hole 412, and the second positioning member 418 extends into the second positioning hole 417 to abut the end of the lead wire 420 against the inner wall of the probe clamp 411.

[0081] It should be understood that when the probe mechanism 2 is in operation (which can be combined with reference to Figure 14), the probe 419 needs to contact the target wafer 3 on the target platform 1 at high temperature, and the target wafer 3 is also at high temperature due to thermal contact with the target platform 1, so that the probe 419 in contact with the target wafer 3 exchanges heat with the target wafer 3, and the heat is transmitted along the probe 419 to the wire 420. At this time, if the probe 419 and the wire 420 are thermally fused or bonded, when the heat is accumulated at the electrical connection end 419b of the probe 419, the connection between the probe 419 and the wire 420 may be melted and disconnected, thereby affecting the stability of the electrical connection between the wire 420 and the probe 419.

[0082] In the above embodiment, in order to improve the stability of the electrical connection between the wire 420 and the probe 419, in the above embodiment, the probe 419 is inserted into the inner side of the probe clamp 411 from the first connecting hole 412 of the probe clamp 411 in the first direction X of the probe assembly 40, and the first positioning member 414 is inserted into the first positioning hole 413 in the second direction Y of the probe assembly 40 to abut the inner wall of the probe clamp 411. In this way, the position of the probe 419 can be fixed at this position. The wire is inserted into the inner side of the probe clamp 411 from the second connecting hole 416 in the second direction Y of the probe assembly 40 to electrically connect the electrical connection end 419b of the probe 419. The second positioning member 418 is inserted into the inner side of the probe clamp 411 from the second positioning hole 417 in the first direction X of the probe assembly 40 to fix the wire 420 to the inner wall of the probe clamp 411. In this way, the wire 420 and the probe 419 are fixed at the fixed position of the probe clamp 411, so that when the probe assembly 40 detects the target wafer 3, the relative position between the probe 419 and the wire 420 is difficult to change, thereby ensuring the electrical connection effect between the probe 419 and the wire 420.

[0083] Based on the above embodiment, further, the probe clamp 411 is a metal member, and because the probe 419 is necessarily an electrically conductive member, the wire 420 and the probe 419 can be electrically connected through the probe clamp 411. When the probe 419 and / or the wire 420 expand or shrink due to heat, causing the probe 419 and the wire 420 to be disconnected physically, the probe 419 and the wire 420 can still be electrically connected through the probe clamp 411, thereby ensuring the electrical connection effect between the probe 419 and the wire 420.

[0084] Additionally, when the worker assembles the probe 419, the probe clamp 411 and the wire 420, the physical connection between the probe 419 and the wire 420 can be unstable due to the worker's mistake, which can affect the electrical connection between the probe 419 and the wire 420. However, in the above embodiment, the wire 420 and the probe 419 are fixed to the probe clamp 411, and the electrical connection between the wire 420 and the probe 419 is achieved through the probe clamp 411, which can effectively avoid the above situation, thereby reducing the influence of human error on the electrical performance of the probe structure 41, and enabling the probe mechanism 2 to stably exert its own detection performance.

[0085] Please refer to Figure 13 In some embodiments, the first connecting hole 412 is in communication with the second connecting hole 416, and one end of the wire 420 is electrically connected to the electrical end 419b. In this way, the wire 420 and the probe 419 can be directly physically connected, and the probe clamp 411 does not interfere with the physical connection between the wire 420 and the probe 419, thereby ensuring the detection performance of the probe assembly 40.

[0086] Please refer to ​ In some embodiments, the probe assembly 40 further comprises a clamp 48 and a heat-conducting member (not shown in the figure), wherein the clamp 48 is connected to the outer side of the heat-insulating protective member 43, and one end of the heat-conducting member is connected to the clamp 48, and the other end is connected to the target platform 1.

[0087] It should be noted that when the probe assembly 40 enters the working mode, if the probe 419 directly contacts the target wafer 3, the probe 419 will rapidly heat up, thereby causing the volume of the probe 419 to expand due to heat, which can affect the accuracy of the detection data of the target wafer 3.

[0088] In the above embodiment, before the probe 419 contacts the target wafer 3, the heat conduction member is connected at one end to the target platform 1 and at the other end to the clamp 48, so that the heat of the target platform 1 can be transferred to the clamp 48 along the heat conduction member. Since the clamp 48 is connected to the outside of the heat insulation protection member 43, the heat is transferred from the clamp 48 to the heat insulation protection member 43. At this time, the heat insulation protection member 43 is preheated to a certain extent. Since the heat insulation protection member 43 contacts the probe clamp 411, and the probe clamp 411 is connected to the probe 419, the heat of the heat insulation protection member 43 is transferred to the probe clamp 411, and then to the probe 419. Therefore, the probe 419 is preheated before the probe assembly 40 performs the detection operation. Thus, the temperature difference between the probe 419 and the target wafer 3 is greatly reduced. After the probe 419 contacts the target wafer 3, the probe 419 will not expand excessively due to rapid heating, and will not deform in volume due to the same temperature as the target wafer 3. That is, the detection end 419a of the probe 419 will not deviate excessively relative to the target position of the target wafer 3. The probe assembly 40 can accurately detect the target wafer 3 to obtain accurate data of the target wafer 3.

[0089] It should be noted that in the above embodiments, the description of each embodiment has its own emphasis, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments. Secondly, those skilled in the art should know that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily required by the application.

[0090] The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions described in the foregoing embodiments can be modified, or some technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A probe assembly, characterized in that: include: A detection structure, the detection structure comprising a first operating part, a second operating part, and a third operating part connected in sequence; a high-voltage device, the high-voltage device being electrically connected to one end of the detection structure and providing a high-voltage current to the detection structure; a heat-insulating protective member, wherein the heat-insulating protective member is partially provided on the outer peripheral side of the first operating portion of the detection structure and partially provided on the outer peripheral side of the second operating portion of the detection structure; a supporting structure provided on an outer peripheral side of the third operating portion of the detection structure; as well as An adapter is connected between the heat insulation protection component and the support structure.

2. The probe assembly according to claim 1, wherein The detection structure includes a probe and a wire, the probe includes a detection end and a connection end, one end of the wire is electrically connected to the connection end, and the other end is electrically connected to the high-voltage device; the first working part, the second working part, and the third working part each include a partial segment of the wire, and the first working part includes the probe; The probe assembly further includes a mounting channel, which sequentially passes through the thermal insulation protective member, the adapter, and the support structure along a first direction of the probe assembly; The probe assembly further includes a heat-insulating tube group, which is located in the installation channel and is arranged on the outer peripheral side of the wire.

3. The probe assembly according to claim 2, wherein: The insulated tube group includes a first insulated sub-tube and a second insulated sub-tube. The first insulated sub-tube and the second insulated sub-tube are both arranged on the outer peripheral side of the conductor. Along the extension direction of the conductor, the first insulated sub-tube and the second insulated sub-tube are distributed in sequence.

4. The probe assembly according to claim 3, wherein: The insulated tube group further includes a third insulated sub-tube, and at least a portion of the first insulated sub-tube and at least a portion of the second insulated sub-tube are located on the inner circumference side of the third insulated sub-tube.

5. The probe assembly according to claim 2, wherein: The first operating part further includes a probe fixture and a first positioning member, wherein the probe fixture is at least partially inserted into the mounting channel; the probe fixture is provided with a first connecting hole and a first positioning hole that are connected to each other, wherein the hole direction of the first connecting hole extends along the first direction of the probe assembly, and the hole direction of the first positioning hole is opened along the second direction of the probe assembly, wherein the first direction and the second direction form an angle; The connecting end of the probe extends into the first connecting hole, and the first positioning member extends into the first positioning hole to press the connecting end against the inner wall of the probe fixture.

6. The probe assembly according to claim 5, wherein: The probe fixture is further provided with a second connecting hole and a second positioning hole that are connected to each other, the hole direction of the second connecting hole extending along the first direction of the probe assembly, and the hole direction of the second positioning hole opening along the second direction of the probe assembly, wherein the first connecting hole and the second connecting hole are opened at opposite ends of the probe fixture, and along the first direction of the probe assembly, the first positioning hole and the second positioning hole are distributed in sequence; The first operating part further includes a second positioning member. The end of the wire extends into the first connecting hole. The second positioning member extends into the second positioning hole to press the end of the wire against the inner wall of the probe fixture.

7. The probe assembly according to claim 6, wherein: The probe fixture is a metal part; And / or, the first connection hole is connected to the second connection hole, and one end of the wire is electrically connected to the connection end.

8. The probe assembly according to any one of claims 2 to 7, wherein: The thermal insulation protective component is a ceramic component; And / or, the thermal insulation tube group is a ceramic tube group; And / or, the probe assembly further includes a clamp and a heat conductor, wherein the clamp is connected to the outer side of the heat insulation protective member; one end of the heat conductor is connected to the clamp, and the other end is connected to the target platform.

9. A probe mechanism, characterized in that: include: base; The mounting base includes a first mounting portion and a second mounting portion connected to each other, wherein the extension direction of the first mounting portion intersects with the second mounting portion; the first mounting portion is provided with a first through hole, and the second mounting portion is provided with a second through hole, wherein the first through hole is connected to the second through hole; the first mounting portion has a first connecting end and a second connecting end arranged opposite to each other, and the first connecting end is lifted and lowered to connect to the base; a bellows, one end of which is connected to the second connection end of the first mounting portion; The probe assembly according to any one of claims 1 to 8, wherein the support structure is connected to the second connection end of the first mounting portion, and the bellows is located on an outer peripheral side of the probe assembly; and A high-voltage electrode protection assembly, comprising a housing and a sealing ring, wherein the housing comprises a high-voltage protection cover and an electrode extension tube, and the sealing ring is connected to opposite ends of the electrode extension tube; In which, the high-voltage device includes a high-voltage power connection part and a high-voltage discharge part connected to each other, the high-voltage protection cover covers the high-voltage power connection part, and the electrode extension tube covers the high-voltage discharge part; the electrode extension tube is connected to the second mounting part, and the high-voltage discharge part is electrically connected to the third working part through the second through hole and the first through hole in sequence.

10. A wafer testing mechanism, characterized in that: include: Target platform; In the probe mechanism as described in claim 9, the base is connected to the target platform, and the probe has a first position and a second position relative to the target platform. When the mounting seat is raised or lowered along the height direction of the base, the probe moves to the first position or the second position with the mounting seat.

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