Continuous annular vapor deposition equipment

Abstract

The utility model relates to the technical field of chemical vapor deposition, in particular to continuous annular vapor deposition equipment which comprises a main body device and an annular conveying device, and the main body device covers the annular conveying device. A preparation chamber, a reaction chamber and a heat treatment chamber are sequentially formed in the main body device in the rotating direction of the annular conveying device; the gas supporting device is connected with the main body device and is used for providing a gas environment for the main body device; the reaction container can be placed in the main body device, and the reaction container can be driven by the annular conveying device to move circumferentially and sequentially pass through the preparation chamber, the reaction chamber and the heat treatment chamber; the gas supporting device can be connected with the reaction container located in any one of the preparation chamber, the reaction chamber and the heat treatment chamber, and provides a corresponding gas environment for the reaction container.

Description

Technical Field

[0001] This application relates to the field of chemical vapor deposition technology, and in particular to a continuous annular chemical vapor deposition apparatus. Background Technology

[0002] Silicon carbide is a representative ceramic material that is widely used in various industrial fields due to its excellent physical, chemical and electrical properties.

[0003] In recent years, with the active progress in the development of semiconductor processing components using silicon carbide materials, the importance of silicon carbide materials has been increasing. In particular, silicon carbide materials are widely used as components for etching processes in semiconductor processing due to their high plasma resistance.

[0004] Silicon carbide used in semiconductor etching processes is manufactured using traditional methods. However, because this method cannot meet the required quality and performance standards, chemical vapor deposition is often used in the existing technology.

[0005] In the process of chemical vapor deposition of silicon carbide, a mixture of Si-containing gases such as SiH4, SiCl2, and SiCl4 and C-containing gases such as C2H2, CH4, and C3H8 is used as the raw material gas, or a single gas such as CH3SiCl3, CH3SiH3, or (CH3)3SiH is used as the raw material for deposition. In existing technologies, silicon carbide materials manufactured by chemical vapor deposition exhibit excellent quality, but the productivity is relatively low. Utility Model Content

[0006] To solve, or at least partially solve, the above-mentioned technical problems, this utility model provides a continuous annular vapor deposition apparatus, comprising:

[0007] The main device and the annular conveyor are provided. The main device is covered by the annular conveyor. The main device is formed in sequence along the rotation direction of the annular conveyor, including a preparation chamber, a reaction chamber and a heat treatment chamber.

[0008] A gas support device, connected to the main device, is used to provide a gaseous environment for the main device;

[0009] The reaction vessel can be placed inside the main body device, and the reaction vessel can move in a circular motion under the drive of the annular conveyor and pass through the preparation chamber, the reaction chamber and the heat treatment chamber in sequence;

[0010] The gas support device can be connected to the reaction vessel located in any one of the preparation chamber, the reaction chamber, and the heat treatment chamber, and provide a corresponding gas environment for the reaction vessel.

[0011] Further, the reaction containers can be at least two.

[0012] One of the reaction containers is arranged in the reaction chamber for chemical vapor deposition, and another of the reaction containers is arranged in the preparation chamber.

[0013] The annular conveying device is used to move the reaction container, which has completed the deposition operation, from the reaction chamber to the heat treatment chamber.

[0014] The annular conveying device is also used to move the reaction container, which has completed the preparation operation, from the preparation chamber to the reaction chamber.

[0015] Further, the annular conveying device can provide a loading station and an unloading station.

[0016] The loading station and the unloading station are arranged along the rotation path of the annular conveying device between the heat treatment chamber and the preparation chamber.

[0017] The loading station is used to place the reaction container, and the reaction container placed on the loading station can be conveyed into the preparation chamber by the annular conveying device.

[0018] The unloading station is used to unload the reaction container, and the reaction container in the heat treatment chamber can be conveyed to the unloading station by the annular conveying device.

[0019] Further, the annular conveying device can include:

[0020] An annular turntable is used to support the reaction container.

[0021] Support rollers are arranged in sequence at the bottom of the annular turntable along the circumference of the annular turntable, and are used to support the annular turntable.

[0022] A driving assembly is connected with the annular turntable, and is used to drive the annular turntable to rotate.

[0023] Further, the annular turntable is provided with accommodation grooves, and the accommodation grooves are multiple and uniformly distributed along the circumferential direction of the annular turntable.

[0024] The shape of the accommodation groove is matched with the shape of the reaction container, so that the reaction container can be fitted in the accommodation groove.

[0025] Further, the driving assembly can include:

[0026] A driving motor.

[0027] A rack is arranged on the annular turntable.

[0028] A speed reduction gear set is connected with the output shaft of the driving motor, and the speed reduction gear set is matched with the rack and can rotate under the driving of the driving motor, thereby driving the annular turntable to rotate.

[0029] Further technical solutions can also be that the driving assembly comprises:

[0030] A guide groove is arranged on the annular turntable and extends along the circumferential direction of the annular turntable.

[0031] A plurality of guide rollers are uniformly distributed along the circumferential direction of the annular turntable, and the guide rollers can abut on the guide groove to guide the rotation of the annular turntable.

[0032] Further technical solutions can also be that the driving assembly comprises:

[0033] A gate valve device is arranged in the main body device and located at both ends of the reaction chamber, for separating the reaction chamber from the preparation chamber and / or separating the reaction chamber from the heat treatment chamber.

[0034] Further technical solutions can also be that the gate valve device comprises:

[0035] A gate and a lifting driver connected therewith;

[0036] The lifting driver is used to drive the gate to lift, and when the gate is lowered, the bottom of the gate can abut on the upper surface of the annular turntable.

[0037] Further technical solutions can also be that the gate valve device further comprises:

[0038] A sealing member and a sealing driver connected therewith;

[0039] The sealing driver is used to drive the sealing member to lift, and when the sealing member is lifted, the top of the sealing member can abut on the bottom surface of the annular turntable.

[0040] Further technical solutions can also be that a gas interface is arranged on the reaction container; and a gas supporting device is arranged beside the main body device, and the gas supporting device comprises:

[0041] A gas pipeline and a docking mechanism connected with the gas pipeline;

[0042] The docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container, so that the head end of the gas pipeline is connected with or disconnected from the gas interface of the reaction container;

[0043] The inner diameter of the outermost part of the gas interface gradually decreases from outside to inside to form a guide for the gas pipeline.

[0044] Compared with the prior art, the continuous annular vapor deposition equipment disclosed in the application can distribute the three production processes of pretreatment, deposition reaction and heat treatment to different stations by constructing independent preparation chambers and heat treatment chambers, and move the reaction container between the preparation chambers, the reaction chambers and the heat treatment chambers through the annular conveying device, so that continuous production and processing are realized, and convenience is significantly improved. BRIEF DESCRIPTION OF DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present application, the related drawings will be briefly introduced below. It can be understood that the drawings described below are only used to illustrate some embodiments of the present application, and those skilled in the art can also obtain many other technical features and connection relationships not mentioned in the present application according to the drawings.

[0046] Figure 1 is a structural schematic view of a continuous annular vapor deposition equipment of the present application;

[0047] Figure 2 is another structural schematic view of a continuous annular vapor deposition equipment of the present application;

[0048] Figure 3 is a structural schematic view of a gate valve device in a continuous annular vapor deposition equipment of the present application;

[0049] Figure 4 is a structural schematic view of an annular conveying device in a continuous annular vapor deposition equipment of the present application.

[0050] BRIEF DESCRIPTION OF DRAWINGS

[0051] 1, main device; 11, preparation chamber; 12, reaction chamber; 13, heat treatment chamber;

[0052] 2, annular conveying device; 21, feeding station; 22, discharging station; 23, annular turntable; 231, accommodating groove; 24, supporting roller; 25, guide groove; 26, guide roller;

[0053] 3, gas supporting device; 31, gas pipeline;

[0054] 4, reaction container; 41, gas interface;

[0055] 5, gate valve device; 51, gate; 52, lifting driver. DETAILED DESCRIPTION

[0056] In the prior art, a chemical vapor deposition apparatus generally has a reaction chamber, and a gas supporting device is connected to the reaction chamber. The gas supporting device mixes raw materials used in the process with other process gases, and supplies the mixed gases in the form of gas phase to the reactor under the premise of meeting the process conditions. The reactor performs thermal decomposition on the supplied mixed gases under high temperature and constant atmosphere, and deposits silicon carbide on the substrate previously arranged in the reaction chamber. The gas supporting device often further includes an exhaust mechanism for exhausting by-products and excess mixed gases generated in the chemical vapor deposition process.

[0057] In the prior art, the silicon carbide material manufactured by chemical vapor deposition has excellent quality, but the production rate is low. In view of this, the inventors of the present application provide a continuous ring-type vapor deposition apparatus to solve the above problems.

[0058] Hereinafter, several specific embodiments of the present application will be described in detail with reference to the accompanying drawings.

[0059] Embodiment 1

[0060] The present embodiment discloses a continuous ring-type vapor deposition apparatus, as shown in Figure 1 and Figure 2 , comprising:

[0061] A main device 1 is arranged on a ring-type conveying device 2, and the main device 1 is sequentially formed with a preparation chamber 11, a reaction chamber 12 and a heat treatment chamber 13 along the rotation direction of the ring-type conveying device 2.

[0062] A gas supporting device 3 is connected to the main device 1, and is used to provide a gas environment for the main device 1.

[0063] A reaction container 4 can be placed in the main device 1, and the reaction container 4 can be driven to move circumferentially on the ring-type conveying device 2 and sequentially pass through the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13.

[0064] The gas supporting device 3 can be connected to the reaction container 4 in any one of the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13, and can provide a corresponding gas environment for the reaction container 4.

[0065] In the three spaces of the main device 1:

[0066] The preparation chamber 11 is used to fix and install the substrate by using a clamp, and to prepare for the chemical vapor deposition process under the premise of matching the required production quantity.

[0067] The reaction chamber 12 is similar to the conventional chemical vapor deposition apparatus.

[0068] The heat treatment chamber 13 can heat treat the chemical vapor deposition product, such as silicon carbide, to control and improve the purity level of the product. The heat treatment chamber 13 also facilitates quick harvesting of the product after the heat treatment. The gas supply 3 can supply the required gases to the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13. The gas supply 3 can also include exhaust mechanisms that can be evacuated.

[0069] In particular, the continuous loop chemical vapor deposition apparatus of the present embodiment can be used to deposit silicon carbide and its derivatives, such as silicon carbide rings, silicon carbide rods, silicon carbide wafers and many other types of silicon carbide products.

[0070] The inventors have found that in the prior art, chemical vapor deposition apparatuses generally only have one reaction chamber and follow the following process:

[0071] 1. The substrate is placed in the reaction chamber;

[0072] 2. The reaction chamber is evacuated and mixed gases are supplied to the reaction chamber by the gas supply to create the atmosphere in the reaction chamber;

[0073] 3. The reaction chamber is heated to cause the mixed gases to react and deposit on the substrate;

[0074] 4. After deposition, the atmosphere is maintained for subsequent heat treatment;

[0075] 5. The temperature of the reaction chamber is slowly lowered to room temperature;

[0076] 6. The reaction product is removed.

[0077] It can be seen that the above steps are intermittent. The reaction chamber needs to be continuously cycled through the heating and cooling process. Moreover, in steps 1, 5 and 6, the gas supply 3 does not need to supply the reaction raw gas, and in steps 1 and 6, the gas in the reaction chamber is even required to be replaced with an air environment for operation. These result in the heating device of the reaction chamber and the gas supply being unable to be fully utilized at all times, thus significantly reducing the production rate. That is, in the prior art, the main factor that restricts the efficiency of the production process of silicon carbide material in chemical vapor deposition is that the preheating of the reaction, the atmosphere setting and the post-heat treatment occupy a large amount of time.

[0078] Compared with the prior art, the continuous loop chemical vapor deposition apparatus provided based on the present embodiment provides a continuous chemical vapor deposition method, which follows the following process:

[0079] 1. The reaction vessel 4 is set in the preparation chamber 11 of the main device 1. During this process, the substrates used for manufacturing silicon carbide material can be stacked by using a clamp. Then, preheating can be performed, and a vacuum can be created in the reaction vessel 4 to adjust the pressure difference for subsequent atmosphere synchronization.

[0080] 2. The atmosphere in the preparation chamber 11 and the reaction vessel 4 and the reaction chamber 12 of the main device 1 is constructed by the gas support device 3; during this step, the airtightness can be improved by closing the connection between the preparation chamber 11, the reaction chamber 12 and the outside world.

[0081] 3. The reaction vessel 4 is moved into the reaction chamber 12 by the annular conveying device 2; at this time, the preparation chamber 11 is emptied and can be used for the next reaction vessel 4 to enter and prepare the atmosphere and preheat.

[0082] 4. The reaction gas is supplied to the reaction vessel 4 by the gas support device 3 to perform the chemical vapor deposition reaction; during this step, the reaction vessel 4 can be heated by the main device 1 so that the reaction gas can fully perform the deposition reaction.

[0083] 5. At the same time or later, the atmosphere in the heat treatment chamber 13 of the main device 1 can also be constructed synchronously by the gas support device 3;

[0084] 6. After the reaction is completed, the reaction vessel 4 is moved to the heat treatment chamber 13 by the annular conveying device 2 to perform the pre-delivery heat treatment or cooling process of the reaction product. In addition, some additional heat treatment can also be performed in the heat treatment chamber 13, such as recrystallization, to control the resistivity and light transmittance of the product. During the heat treatment process, the reaction chamber 12 is emptied and can be used for the next reaction vessel 4 to enter and perform the chemical vapor deposition reaction.

[0085] As can be seen from the above process, the continuous annular vapor deposition equipment provided by the embodiment can distribute the pre-treatment, deposition reaction and heat treatment processes to different stations by constructing independent preparation chamber 11 and heat treatment chamber 13, and move the reaction vessel 4 between the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 by the annular conveying device 2, to realize continuous production and processing, and significantly improve the convenience.

[0086] It is worth mentioning that in the embodiment, the annular conveying device 2 is used to drive the circumferential movement of the reaction vessel 4 so that the reaction vessel 4 can pass through the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 in turn. Compared with the linear arrangement of the continuous vapor deposition system, the continuous annular vapor deposition equipment in the embodiment has a more compact structure, occupies less space and can effectively save site costs.

[0087] In some preferred embodiments, the reaction containers 4 are at least two in number;

[0088] One of the reaction containers 4 is arranged in the reaction chamber 12 for chemical vapor deposition, and another of the reaction containers 4 is arranged in the preparation chamber 11;

[0089] The annular conveying device 2 is used to move the reaction container 4 that has completed the deposition operation from the reaction chamber 12 to the heat treatment chamber 13;

[0090] The annular conveying device 2 is also used to move the reaction container 4 that has completed the preparation operation from the preparation chamber 11 to the reaction chamber 12.

[0091] For example, the number of reaction containers 4 is increased to two, so that while the deposition operation is being performed in the reaction chamber 12, the preparation chamber 11 can simultaneously perform the pretreatment on another reaction container 4. This design enables the deposition and pretreatment to be performed simultaneously, avoiding the waiting time when the reaction container 4 is switched between the deposition and the pretreatment in the conventional device. The movement of the reaction container 4 between the preparation chamber 11, the reaction chamber 12, and the heat treatment chamber 13 is achieved by the annular conveying device 2, which ensures that the reaction container 4 can pass through each station in a predetermined order, thereby realizing continuous production.

[0092] In this embodiment, by increasing the number of reaction containers 4 and using the annular conveying device 2 to achieve the continuous movement of the reaction containers 4 between the preparation chamber 11, the reaction chamber 12, and the heat treatment chamber 13, the problem of low production efficiency of the conventional chemical vapor deposition device is solved. Compared with the prior art, the device in this embodiment can perform multiple processes at the same time, significantly improving the production efficiency, and at the same time, through the design of the annular conveying device 2, the compactness of the device structure and the stability of the operation are ensured.

[0093] In some preferred embodiments, the annular conveying device 2 can provide a loading station 21 and an unloading station 22;

[0094] The unloading station 22 and the loading station 21 are arranged along the rotation path of the annular conveying device 2 between the heat treatment chamber 13 and the preparation chamber 11;

[0095] The loading station 21 is used to place the reaction container 4, and the reaction container 4 located on the loading station 21 can be conveyed by the annular conveying device 2 into the preparation chamber 11;

[0096] The unloading station 22 is used to unload the reaction container 4, and the reaction container 4 located in the heat treatment chamber 13 can be conveyed by the annular conveying device 2 to the unloading station 22.

[0097] Specifically, the arrangement of the upper loading station 21 and the lower unloading station 22 enables the reaction containers 4 to be orderly transferred between the heat treatment chamber 13 and the preparation chamber 11. The upper loading station 21 is used to receive the reaction containers 4 to be treated and deliver them to the preparation chamber 11 for pretreatment. The lower unloading station 22 is used to receive the reaction containers 4 that have completed the heat treatment and unload them from the equipment. In some embodiments, the upper loading station 21 and the lower unloading station 22 can be equipped with automated mechanical arms or conveyors to achieve automatic loading and unloading of the reaction containers 4. In addition, sensors and control systems can be provided between the stations to ensure accurate positioning and safe operation of the reaction containers 4 during transfer.

[0098] It is worth mentioning that, since the lower unloading station 22 and the upper loading station 21 are arranged adjacently, in some embodiments, the two stations (the lower unloading station 22 and the upper loading station 21) can share a set of mechanical arms for loading and unloading operations, which can greatly save equipment costs and site costs.

[0099] Embodiment Two

[0100] This embodiment is a further improvement based on the first embodiment, which improves in that, as shown in Figure 1 、 Figure 2 and Figure 4 , the annular conveying device 2 comprises:

[0101] an annular turntable 23 for supporting the reaction containers 4;

[0102] support rollers 24 arranged in sequence along the circumference of the annular turntable 23 at the bottom of the annular turntable 23 for supporting the annular turntable 23;

[0103] a drive assembly connected to the annular turntable 23 for driving the annular turntable 23 to rotate.

[0104] A plurality of supporting rollers 24 arranged at the bottom of the annular turntable 23 can well support the annular turntable 23 and share the pressure on the annular turntable 23. In addition, the rolling friction provided by the supporting rollers 24 can provide support for the rotation of the annular turntable 23. The rolling friction provided by the supporting rollers 24 is much smaller than the sliding friction, which helps to reduce energy consumption and makes the movement of the annular turntable 23 more smooth and efficient. The supporting rollers 24 are sequentially and evenly distributed along the length direction of the track, and such evenly distributed support points can enhance the stability of the entire system and reduce the vibration caused by uneven load. Since the rolling friction causes less wear on the annular turntable 23 than the sliding friction, the service life of the annular turntable 23 can be effectively prolonged. In addition, since part of the supporting rollers 24 and the annular turntable 23 need to be arranged in the main device 1, and the temperature in the main device 1 is relatively high, graphite or CMC (ceramic matrix composite) material can be considered. Such materials can withstand high temperature environments exceeding 500°C and are superior to high-temperature alloys in terms of high-temperature resistance, oxidation resistance, strength and stiffness, density, corrosion resistance, etc.

[0105] In some preferred embodiments, the annular turntable 23 is provided with accommodation grooves 231, and the accommodation grooves 231 are evenly distributed along the circumferential direction of the annular turntable 23.

[0106] The shape of the accommodation grooves 231 matches the shape of the reaction containers 4, so that the reaction containers 4 can be fitted in the accommodation grooves 231.

[0107] The design of the accommodation grooves 231 enables the reaction containers 4 to be stably placed on the annular turntable 23, avoiding shaking or deviation during transmission. The shape of the accommodation grooves 231 matches the shape of the reaction containers 4 to ensure that the reaction containers 4 can be tightly fitted in the accommodation grooves 231. In addition, the uniform distribution of the accommodation grooves 231 helps to achieve smooth transmission of the reaction containers 4 between the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13, thereby improving the operation efficiency and reliability of the equipment.

[0108] In some embodiments, the depth of the accommodation grooves 231 can be adjusted according to the height of the reaction containers 4 to ensure that the reaction containers 4 do not fall out of the accommodation grooves 231 due to vibration or centrifugal force during transmission. Further, the inner wall of the accommodation grooves 231 can be provided with anti-slip materials or anti-slip structures to increase the friction between the reaction containers 4 and the accommodation grooves 231 and prevent the reaction containers 4 from slipping when rotating at high speed.

[0109] In this embodiment, by setting the accommodating groove 231, the stability problem of the reaction container 4 during transportation on the annular conveying device 2 is solved, and the equipment failure and production interruption caused by the deviation or shaking of the reaction container 4 are reduced. In addition, the uniform distribution and shape matching design of the accommodating groove 231 further optimize the space utilization of the equipment, making the equipment structure more compact and the operation more efficient.

[0110] In some embodiments, the driving assembly comprises:

[0111] a driving motor;

[0112] a rack arranged on the annular turntable 23;

[0113] a reduction gear set connected with the output shaft of the driving motor, the reduction gear set is matched with the rack, and can rotate under the driving of the driving motor, thereby driving the annular turntable 23 to rotate.

[0114] Specifically, the driving motor serves as a power source and transmits power to the reduction gear set through the output shaft. The function of the reduction gear set is to convert the high-speed low-torque output of the driving motor into low-speed high-torque output to meet the requirement of stable rotation of the annular turntable 23. The rack is engaged with the reduction gear set, and when the reduction gear set rotates, the rack drives the annular turntable 23 to move in a circular motion. This design can ensure that the annular turntable 23 remains stable during rotation and avoids the problem of unstable rotation caused by excessive speed or insufficient torque.

[0115] In some embodiments, the driving motor can be a stepper motor or a servo motor to achieve precise control of the rotation speed and position of the annular turntable 23. The reduction gear set can be a planetary gear reducer or a worm gear reducer to improve transmission efficiency and reduce noise. The rack can be made of high-strength alloy steel to improve wear resistance and service life.

[0116] In this embodiment, by introducing the driving motor, the rack and the reduction gear set, the stable and precise rotation of the annular turntable 23 is achieved. Compared with the prior art, this technical solution can effectively improve the running stability and control accuracy of the annular conveying device 2, thereby ensuring the smooth transfer of the reaction container 4 between the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13. This design not only simplifies the equipment structure, but also improves the reliability and production efficiency of the equipment.

[0117] In some preferred embodiments, as shown in Figure 4 the driving assembly comprises:

[0118] a guide groove 25 arranged on the annular turntable 23 and extending along the circumferential direction of the annular turntable 23;

[0119] A plurality of guide rollers 26 are evenly distributed along the circumferential direction of the annular turntable 23, and can abut against the guide groove 25 to guide the rotation of the annular turntable 23.

[0120] The cooperation of the guide groove 25 and the guide roller 26 can effectively reduce the deviation and vibration of the annular turntable 23 during rotation, thereby improving the operation accuracy and stability of the device. Through the uniform distribution of the guide rollers 26, it can ensure that the annular turntable 23 is uniformly stressed during rotation, avoiding wear or damage caused by excessive local stress. In addition, the extension direction of the guide groove 25 is consistent with the circumferential direction of the annular turntable 23, which can further ensure the accuracy of the trajectory of the turntable during rotation, avoiding the influence of trajectory deviation on the normal operation of the device.

[0121] Specifically, the guide groove 25 is usually made of wear-resistant materials to ensure stability and durability during long-term operation. The guide rollers 26 are installed below the annular turntable 23 through bearings to reduce friction and improve the smoothness of rotation. The number and distribution of the guide rollers 26 can be adjusted according to the size and load of the annular turntable 23 to ensure that the turntable remains balanced and stable during rotation.

[0122] Embodiment Three

[0123] This embodiment is a further improvement based on the first or second embodiment, which improves in that, as shown in Figure 1 、 Figure 2 and Figure 3 , the continuous annular vapor deposition device further comprises:

[0124] A gate valve device 5 is arranged in the main body device 1 and located at both ends of the reaction chamber 12, used to separate the reaction chamber 12 from the preparation chamber 11 and / or separate the reaction chamber 12 from the heat treatment chamber 13.

[0125] Through the arrangement of the gate valve device 5, the reaction chamber 12 can be effectively isolated from the preparation chamber 11 or the heat treatment chamber 13, the fluid flow can be controlled and managed, the gas in different process stages can be prevented from interfering with each other, and the gas environment in the reaction chamber 12 can be ensured stable.

[0126] In some embodiments, as shown in Figure 3 , the gate valve device 5 comprises:

[0127] A gate 51 and a lifting driver 52 connected thereto;

[0128] The lifting driver 52 is used to drive the gate 51 to rise and fall, and when the gate 51 falls, the bottom of the gate 51 can abut against the upper surface of the annular turntable 23.

[0129] In addition, the gate valve device 5 further comprises a seal 53 and a seal driver connected thereto;

[0130] The seal driver is used to drive the seal 53 to rise and fall, and when the seal 53 is raised, the top of the seal 53 can abut against the bottom surface of the annular turntable 23.

[0131] Specifically, the gate 51 is driven to move up and down by the lifting driver 52, so as to separate the reaction chamber 12 from the preparation chamber 11 or the heat treatment chamber 13 when needed. When the gate 51 is lowered, the bottom thereof is in close contact with the upper surface of the annular turntable 23, so as to ensure the gas isolation between the reaction chamber 12 and other chambers. The seal 53 is driven to rise and fall by the seal driver, and when the seal 53 is raised, the top thereof is in close contact with the bottom surface of the annular turntable 23, so as to further enhance the sealing effect and prevent gas leakage.

[0132] As a preferred embodiment, the lifting driver 52 can adopt a hydraulic cylinder or an electric push rod to realize the smooth lifting of the gate 51. The seal driver can adopt a pneumatic device or an electric device to ensure the quick response and reliable sealing of the seal 53. In addition, the materials of the gate 51 and the seal 53 can be selected from high-temperature-resistant and corrosion-resistant metals or ceramic materials to adapt to the high-temperature and corrosive gas environment in the chemical vapor deposition process.

[0133] Embodiment Four

[0134] The present embodiment is further improved based on the first, second or third embodiment, and the improvement lies in that, as shown in the figure, a gas interface is arranged on the reaction container 4; the gas support device 3 is arranged beside the main body device 1, and the gas support device 3 comprises: Figure 3

[0135] a gas pipeline 31 and a docking mechanism connected with the gas pipeline 31;

[0136] The docking mechanism is used to drive the gas pipeline 31 to move close to or away from the reaction container 4, so as to connect or disconnect the head end of the gas pipeline 31 with the gas interface 41 of the reaction container 4.

[0137] The docking mechanism can also be realized by various power sources capable of linear motion provided by the prior art, such as air rods, hydraulic rods or motors, etc. In the present embodiment, the type of the docking mechanism is not limited. As long as the docking mechanism can automatically drive the gas pipeline 31 to move to realize the docking, the technical purpose of the present embodiment can be achieved. It is worth mentioning that even if the docking is performed manually, the technical purpose of the present disclosure can also be basically achieved.

[0138] ​In some embodiments, the inner diameter of the outermost part of the gas interface 41 gradually decreases from outside to inside, so as to guide the gas pipe 31.

[0139] The inner diameter of the outermost part of the gas interface 41 gradually decreases from outside to inside, so as to guide the gas pipe 31 and avoid deviation during docking.

[0140] The docking mechanism can drive the gas pipe 31 to approach or move away from the reaction container 4, so that the head end of the gas pipe 31 and the gas interface 41 of the reaction container 4 can be connected or disconnected flexibly according to needs. Through the automatic control of the docking mechanism, manual operation can be reduced, and the accuracy and repeatability of operation can be improved. The automatic connection and disconnection reduce the risk of gas leakage caused by improper operation. The quick connection and disconnection save time and improve the working efficiency of the whole system.

[0141] Finally, it should be pointed out that those skilled in the art can understand that, in order to enable the reader to better understand the present application, the embodiments of the present application propose many technical details. However, even without these technical details and various changes and modifications based on the above embodiments, the technical solutions claimed in each claim of the present application can be basically realized. Therefore, in actual application, various changes can be made to the above embodiments in form and detail without departing from the spirit and scope of the present application.

Claims

1. A continuous, toroidal, vapor deposition apparatus, characterized by, The utility model relates to a chemical vapor deposition device, comprising: a main device and a ring-shaped conveying device, the main device is covered on the ring-shaped conveying device, the main device forms with the preparation chamber, reaction chamber and heat treatment chamber along the rotation direction of the ring-shaped conveying device in proper order; a gas supporting device connected with the main device, for providing a gas environment for the main device; a reaction container capable of being placed in the main device, the reaction container can be driven by the ring-shaped conveying device to rotate around the circumference and pass through the preparation chamber, the reaction chamber and the heat treatment chamber in turn; the gas supporting device can be connected with the reaction container in any one of the preparation chamber, the reaction chamber and the heat treatment chamber, and provide corresponding gas environment for the reaction container.

2. The continuous ring vapor deposition apparatus according to claim 1, characterized by, The reaction container is at least two; one reaction container is arranged in the reaction chamber to carry out chemical vapor deposition, and another reaction container is arranged in the preparation chamber; the ring-shaped conveying device is used for moving the reaction container completing deposition work from the reaction chamber to the heat treatment chamber; the ring-shaped conveying device is also used for moving the reaction container completing preparation work from the preparation chamber to the reaction chamber.

3. The continuous ring vapor deposition apparatus according to claim 2, wherein The ring-shaped conveying device can provide a feeding station and a discharging station; The discharging station and the feeding station are arranged between the heat treatment chamber and the preparation chamber along the rotation path of the ring-shaped conveying device; The feeding station is used for placing the reaction container, and the reaction container on the feeding station can be conveyed to the preparation chamber by the ring-shaped conveying device; The discharging station is used for unloading the reaction container, and the reaction container in the heat treatment chamber can be conveyed to the discharging station by the ring-shaped conveying device.

4. The continuous ring vapor deposition apparatus according to claim 3, wherein The ring-shaped conveying device comprises: a ring-shaped turntable for supporting the reaction container; a supporting roller arranged in the bottom of the ring-shaped turntable along the circumference of the ring-shaped turntable for supporting the ring-shaped turntable; a driving assembly connected with the ring-shaped turntable for driving the ring-shaped turntable to rotate.

5. The continuous ring vapor deposition apparatus according to claim 4, wherein The ring-shaped turntable is provided with a plurality of accommodating grooves, and the accommodating grooves are uniformly distributed along the circumferential direction of the ring-shaped turntable; The shape of the accommodating groove is matched with the shape of the reaction container, so that the reaction container can be fitted in the accommodating groove.

6. The continuous ring vapor deposition apparatus according to claim 4, wherein The driving assembly comprises: a driving motor; a rack arranged on the ring-shaped turntable; a speed reduction gear set connected with the output shaft of the driving motor, the speed reduction gear set is matched with the rack, and can rotate under the driving of the driving motor, thereby driving the ring-shaped turntable to rotate.

7. The continuous ring vapor deposition apparatus according to claim 4, wherein The driving assembly comprises: a guide groove arranged on the ring-shaped turntable and extending along the circumferential direction of the ring-shaped turntable; a plurality of guide rollers are uniformly distributed along the circumferential direction of the ring-shaped turntable, the guide rollers can abut on the guide groove, for guiding the rotation of the ring-shaped turntable.

8. The continuous ring vapor deposition apparatus according to any one of claims 4 to 7, wherein Further comprising: A gate valve device is arranged in the main body device and is located at both ends of the reaction chamber, and is used to separate the reaction chamber from the preparation chamber and / or separate the reaction chamber from the heat treatment chamber.

9. The continuous ring vapor deposition apparatus according to claim 8, wherein The gate valve device comprises: a gate and a lifting driver connected thereto; the lifting driver is used to drive the gate to lift and lower, and when the gate is lowered, the bottom of the gate can abut against the upper surface of the annular turntable.

10. The continuous ring vapor deposition apparatus according to claim 9, wherein The gate valve device further comprises: a seal and a sealing driver connected thereto; the sealing driver is used to drive the seal to lift and lower, and when the seal is lifted, the top of the seal can abut against the bottom surface of the annular turntable.

11. The continuous ring vapor deposition apparatus according to claim 8, wherein The reaction container is provided with a gas interface; the gas supporting device is arranged beside the main body device, and the gas supporting device comprises: a gas pipeline and a docking mechanism connected to the gas pipeline; the docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container, so that the head end of the gas pipeline is connected or disconnected with the gas interface of the reaction container; the inner diameter of the outermost part of the gas interface gradually decreases from outside to inside, so as to guide the gas pipeline.

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