Dry etching device

Abstract

The embodiment of the utility model discloses a dry etching device. The dry etching device comprises a cavity; the gas nozzle group is positioned on the inner top surface of the cavity and is used for introducing gas into the reaction cavity; the first electrode and the second electrode are respectively positioned at the top and the bottom of the cavity; the first electrode and the second electrode are used for performing plasma treatment on introduced gas and generating plasma; the gas nozzle set comprises a main nozzle and at least one circle of auxiliary nozzles arranged around the main nozzle. The main nozzle is located in the center area of the inner top face of the cavity, and the auxiliary nozzle is located in the edge area of the inner top face of the cavity. The air injection direction of the main nozzle is the direction from the inner top face of the cavity to the inner bottom face of the cavity, and the included angle between the air injection direction of the auxiliary nozzle and the air injection direction of the main nozzle is larger than 0 degree and smaller than or equal to 90 degrees. According to the technical scheme provided by the utility model, the etching uniformity of the central region and the edge region of the structure to be etched is improved.

Description

Technical Field

[0001] This utility model relates to the field of etching technology, and in particular to a dry etching apparatus. Background Technology

[0002] Etching is a crucial step in the manufacturing process of semiconductors, microelectronics, and LEDs. It involves selectively removing unwanted material from the surface of silicon wafers or sapphire substrates using chemical or physical methods. As the integration density of semiconductor devices increases and their linewidths shrink, controlling critical dimensions becomes increasingly important, placing ever higher demands on etching processes.

[0003] From a technological perspective, etching can be divided into wet etching and dry etching. Dry etching, also known as plasma etching, typically involves introducing an etching gas into a plasma processing device and ionizing the gas into plasma. This plasma is then used to etch the substrate. Dry etching offers advantages such as good anisotropy, high selectivity, good controllability, high flexibility, good repeatability, ease of automation, and high cleanliness. However, dry plasma etching machines use a center-inlet gas chamber, which results in lower etching rates and easier accumulation of byproducts in the edge regions, often leading to less than ideal uniformity and particle size distribution. Therefore, improving the etching uniformity of the central and peripheral regions of the structure to be etched has become a pressing technical problem that needs to be solved in this field. Utility Model Content

[0004] This invention provides a dry etching apparatus to improve the uniformity of etching in the central and edge regions of the structure to be etched.

[0005] According to one aspect of the present invention, a dry etching apparatus is provided, comprising:

[0006] cavity;

[0007] A gas nozzle assembly, located on the inner top surface of the cavity, is used to introduce gas into the reaction chamber;

[0008] The first electrode and the second electrode are located at the top and bottom of the cavity, respectively; the first electrode and the second electrode are used to ionize the introduced gas and generate plasma;

[0009] The gas nozzle assembly includes a main nozzle and at least one ring of auxiliary nozzles arranged around the main nozzle; the main nozzle is located in the central region of the inner top surface of the cavity, and the auxiliary nozzles are located in the edge region of the inner top surface of the cavity; the jet direction of the main nozzle is from the inner top surface of the cavity to the inner bottom surface of the cavity, and the angle between the jet direction of the auxiliary nozzles and the jet direction of the main nozzles is greater than 0° and less than or equal to 90°.

[0010] Optionally, in the direction from the top surface of the cavity to the bottom surface of the cavity, the distance from each of the secondary nozzles to the main nozzle gradually increases;

[0011] And / or, the number of secondary nozzles in each ring is one or more; when the number of secondary nozzles in each ring is more than one, the number of secondary nozzles in each ring is an even number, and they are symmetrically arranged around the main nozzle; the distance from the secondary nozzles in the same ring to the main nozzle is the same, and / or the distance between any two adjacent secondary nozzles in the same ring is the same.

[0012] Optionally, the dry etching apparatus further includes:

[0013] A flow divider is located between the gas nozzle assembly and the bottom of the cavity;

[0014] The gas collection chamber is located between the flow divider plate and the top of the chamber.

[0015] The reaction chamber is located between the flow divider plate and the bottom of the chamber body;

[0016] The flow divider plate has multiple flow divider holes that connect the gas collection chamber and the reaction chamber.

[0017] Optionally, multiple flow dividers are evenly formed on the flow divider plate;

[0018] And / or, the shape of the diversion orifice includes circular, elliptical, or polygonal;

[0019] And / or, the diameter of the diversion orifice is in the range of 0.1 to 2 mm.

[0020] Optionally, the secondary nozzles located in the same circle are distributed in a circular, elliptical, or polygonal shape around the main nozzle;

[0021] Among adjacent rings of auxiliary nozzles, the number of auxiliary nozzles in the ring closer to the main nozzle is less than or equal to the number of auxiliary nozzles in the ring farther from the main nozzle.

[0022] Optionally, the main nozzle is surrounded by two rings of secondary nozzles, and the trajectory of each ring of secondary nozzles around the main nozzle is square; wherein, a secondary nozzle is respectively set at the apex corner of each square trajectory, and the secondary nozzles located at the four apex corners of the inner ring square trajectory are respectively set at the midpoint of each side of the outer ring square trajectory.

[0023] And / or, the shape of the air outlet surface of the main nozzle includes a circle, an ellipse, or a polygon; the shape of the air outlet surface of the secondary nozzle includes an annular, a circle, an ellipse, or a polygon.

[0024] And / or, the area of ​​the air outlet surface of the main nozzle is greater than or equal to the area of ​​the air outlet surface of the secondary nozzle;

[0025] And / or, the diameter of the main nozzle is in the range of 1mm to 50mm.

[0026] Optionally, the dry etching apparatus also includes:

[0027] A support substrate is located at the bottom of the cavity and is used to support the structure to be etched.

[0028] The second electrode is located within the carrier substrate and is enclosed by the carrier substrate; or the second electrode is located on the side of the carrier substrate near the bottom surface of the cavity.

[0029] Optionally, the cavity includes:

[0030] U-shaped base and top cover on top of the U-shaped base;

[0031] The main nozzle and the auxiliary nozzle are formed in the upper cover;

[0032] The inner wall of the U-shaped base includes a support member for supporting the diverter plate.

[0033] Optionally, the first electrode is located on the side of the upper cover away from the U-shaped base.

[0034] Both the first electrode and the second electrode are metal layers;

[0035] The first electrode is grounded, and the second electrode is connected to an RF power supply; or, the second electrode is grounded, and the first electrode is connected to an RF power supply.

[0036] Optionally, the first electrode is located on the side of the upper cover away from the U-shaped base, or the first electrode is wrapped around the side wall of the U-shaped base;

[0037] The first electrode is a metal coil, and the second electrode is a metal layer;

[0038] The first electrode is connected to a first radio frequency power supply, the second electrode is connected to a second radio frequency power supply, and the frequency of the second radio frequency power supply is less than the frequency of the first radio frequency power supply.

[0039] This utility model provides a dry etching apparatus, comprising: a cavity; a gas nozzle assembly located on the inner top surface of the cavity for introducing gas into the reaction cavity; a first electrode and a second electrode located at the top and bottom of the cavity, respectively; the first electrode and the second electrode are used to ionize the introduced gas and generate plasma; wherein, the gas nozzle assembly includes a main nozzle and at least one ring of auxiliary nozzles arranged around the main nozzle; the main nozzle is located in the central region of the inner top surface of the cavity, and the auxiliary nozzles are located in the edge region of the inner top surface of the cavity; the jet direction of the main nozzle is from the inner top surface of the cavity to the inner bottom surface of the cavity, and the angle between the jet direction of the auxiliary nozzles and the jet direction of the main nozzles is greater than 0° and less than 90°. The technical solution provided by this utility model involves setting at least one ring of auxiliary nozzles around the main nozzle. Based on the fact that the gas discharged from the auxiliary nozzles can replenish the area outside the central region of the reaction chamber, and the angle between the jet direction of the auxiliary nozzles and the jet direction of the main nozzle is greater than 0° and less than 90°, the gas in the edge region of the reaction chamber can be replenished in a timely manner, achieving a better replenishment effect. This allows the etching gas in the reaction chamber to be evenly distributed, ensuring that the etching gas reaching the central region of the structure to be etched and the etching gas reaching the edge region of the structure to be etched are evenly distributed, thereby improving the uniformity of etching in the central and edge regions of the structure to be etched.

[0040] It should be understood that the description in this section is not intended to identify key or essential features of the embodiments of this utility model, nor is it intended to limit the scope of this utility model. Other features of this utility model will become readily apparent from the following description. Attached Figure Description

[0041] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 This is a schematic diagram of the structure of a dry etching apparatus provided in an embodiment of the present invention;

[0043] Figure 2 This is a schematic diagram of the arrangement of a main nozzle and a secondary nozzle provided in an embodiment of this utility model;

[0044] Figure 3 This is a schematic diagram of another arrangement of the main nozzle and the auxiliary nozzle provided in this embodiment of the utility model;

[0045] Figure 4 This is a schematic diagram of another arrangement of the main nozzle and the auxiliary nozzle provided in this embodiment of the utility model;

[0046] Figure 5 This is a schematic diagram of another arrangement of the main nozzle and the auxiliary nozzle provided in this embodiment of the utility model;

[0047] Figure 6 This is a schematic diagram of the structure of a flow divider provided in an embodiment of the present invention;

[0048] Figure 7 This is a schematic diagram of another dry etching apparatus provided in this embodiment of the present invention.

[0049] Figure 8 This is a schematic diagram of another dry etching apparatus provided in an embodiment of the present invention. Detailed Implementation

[0050] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the protection scope of the present invention.

[0051] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the utility model described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0052] This invention provides a dry etching apparatus. Figure 1 This is a schematic diagram of a dry etching apparatus provided in an embodiment of the present invention, with reference to... Figure 1 The dry etching apparatus includes:

[0053] Cavity 10;

[0054] A gas nozzle assembly is located on the inner top surface of the cavity 10 and is used to introduce gas into the cavity 10.

[0055] The first electrode 21 and the second electrode 22 are located at the top and bottom of the cavity 10, respectively; the first electrode 21 and the second electrode 22 are used to ionize the introduced gas and generate plasma.

[0056] The gas nozzle assembly includes a main nozzle 30 and at least one ring of auxiliary nozzles 40 arranged around the main nozzle 30. The main nozzle 30 is located in the central region Q1 of the inner top surface of the cavity 10, and the auxiliary nozzles 40 are located in the edge region Q2 of the inner top surface of the cavity 10. The jet direction of the main nozzle 30 is from the inner top surface of the cavity 10 to the inner bottom surface of the cavity 10, and the angle between the jet direction of the auxiliary nozzles 40 and the jet direction of the main nozzle 30 is greater than 0° and less than 90°.

[0057] Specifically, cavity 10 is the core component of the dry etching apparatus, providing the vacuum environment required for the etching process. A gas nozzle assembly is located on the inner top surface of cavity 10, used to introduce gas into cavity 10. The introduced gas includes etching gases that participate in the chemical reaction, and may also include inert gases to maintain the plasma state. First electrode 21 and second electrode 22 are electrically connected to a plasma excitation power source, used to excite the introduced etching gas into plasma, which is then used to chemically etch or ion-bombard the structure 1 to be etched, forming the desired pattern or structure. Plasma is the fourth state of matter besides solid, liquid, and gas, mainly composed of electrons, positive ions, molecules, and free radicals.

[0058] When a gas exists in plasma form, its chemical reactivity is much stronger than under normal conditions. Depending on the material being etched, selecting a suitable etching gas allows for a faster reaction with the material of the structure to be etched (1), achieving the purpose of etching removal. Alternatively, an electric field can be used to guide and accelerate the plasma, giving it sufficient energy. When the plasma bombards the surface of the structure to be etched (1), it ejects atoms from the material, thus achieving etching through physical energy transfer. Therefore, dry etching technology mainly includes physical etching, chemical etching, and physicochemical etching. Chemical etching includes plasma etching (PE), while physicochemical etching includes reactive ion etching (RIE) and inductively coupled plasma etching (ICP). The dry etching apparatus in this embodiment can be a PE etching apparatus, a RIE etching apparatus, or an ICP etching apparatus, or other types of dry etching apparatus.

[0059] The gas nozzle assembly includes a main nozzle 30 and at least one ring of auxiliary nozzles 40 surrounding the main nozzle 30. The main nozzle 30 is located in the central region Q1 of the inner top surface of the cavity 10, and the jet direction of the main nozzle 30 is from the inner top surface of the cavity 10 to the inner bottom surface of the cavity 10. The gas introduced from the main nozzle 30 mainly diffuses downward from the central region of the cavity 10. The auxiliary nozzles 40 are located in the edge region Q2 of the inner top surface of the cavity 10, and the jet direction of the auxiliary nozzles 40 forms a certain angle with the jet direction of the main nozzle 30, which is greater than 0° and less than or equal to 90°. The gas introduced from the auxiliary nozzles 40 mainly diffuses downward from the edge region of the cavity 10. Optionally, the angle between the jet direction of the auxiliary nozzles 40 and the jet direction of the main nozzles 30 is greater than or equal to 45° and less than or equal to 60°. In this embodiment of the invention, the gas discharged from the secondary nozzle 40 can replenish the gas in areas outside the central region of the cavity 10, reducing the gas concentration difference between the central and edge regions of the cavity 10. In addition, the angle between the jet direction of the secondary nozzle 40 and the jet direction of the main nozzle 30 is greater than 0° and less than or equal to 90°, so that the gas ejected from the secondary nozzle 40 has a certain speed in the horizontal direction (the direction perpendicular to the direction from the inner top surface of the cavity 10 to the inner bottom surface of the cavity 10), which can accelerate the speed of lateral gas diffusion, improve the replenishment efficiency of the gas in the edge region of the cavity, and achieve a better replenishment effect.

[0060] The dry etching apparatus provided by this utility model, by setting at least one ring of auxiliary nozzles 40 around the main nozzle 30, can replenish the gas in the edge area of ​​the cavity 10 based on the gas discharged from the auxiliary nozzles 40. In addition, the angle between the jet direction of the auxiliary nozzles 40 and the jet direction of the main nozzle 30 is greater than 0° and less than 90°, which can timely replenish the gas in the edge area of ​​the cavity 10 and expand the replenishment range, thereby achieving a better replenishment effect. This allows the etching gas in the cavity 10 to be evenly distributed, ensuring that the etching gas in the central area and edge area of ​​the structure to be etched 1 is evenly distributed, thereby improving the uniformity of etching in the central area and edge area of ​​the structure to be etched 1.

[0061] Based on the above embodiments, optionally, the dry etching apparatus may further include a support substrate for supporting the structure 1 to be etched, and the support substrate is located at the bottom of the cavity 10. The second electrode 22 may be located within the support substrate and enclosed by it; alternatively, the second electrode 22 may be located on the side of the support substrate near the bottom surface of the cavity 10. In some embodiments, the support substrate may be rotated to more uniformly etch the structure 1 to be etched. Further, the dry etching apparatus may also include a temperature and pressure control system. To ensure the stability and repeatability of the etching process, the dry etching apparatus is typically equipped with a temperature and pressure control system capable of monitoring and adjusting the temperature and pressure within the cavity 10 in real time.

[0062] Based on the above embodiments, please continue to refer to Figure 1 Optionally, in the direction from the top surface of the cavity 10 to the bottom surface of the cavity 10, the distance between each auxiliary nozzle 40 and the main nozzle 30 gradually increases, causing each auxiliary nozzle 40 to spray gas away from the main nozzle 30. Since the gas just ejected from the auxiliary nozzle 40 has a certain velocity, it can timely replenish the gas in the edge area of ​​the cavity 10, and can also increase the distance the gas ejected from the auxiliary nozzle 40 moves in the horizontal direction, thereby expanding the range of gas replenishment by the auxiliary nozzle 40. This allows for gas replenishment in the area of ​​the cavity 10 near the side wall of the cavity 10, achieving a better replenishment effect.

[0063] Based on the above embodiments, Figure 2 This is a schematic diagram of the arrangement of a main nozzle and a secondary nozzle according to an embodiment of the present invention. Figure 3 This is a schematic diagram of another arrangement of the main nozzle and the auxiliary nozzle provided in an embodiment of this utility model. Figure 4 This is a schematic diagram of another arrangement of the main nozzle and the auxiliary nozzle provided in this embodiment of the present invention; see reference. Figures 2-4 Optionally, the number of secondary nozzles 40 in each revolution is 1 (see reference). Figure 2 ) or multiple (references) Figures 3-4 When there are multiple secondary nozzles 40 in each ring, the number of secondary nozzles 40 in each ring is even, and they are symmetrically arranged around the main nozzle 30; the distance between the secondary nozzles 40 in the same ring and the main nozzle 30 is the same, and / or the distance between two adjacent secondary nozzles 40 in the same ring is the same.

[0064] For details, please refer to Figure 2 When there is one secondary nozzle 40 in each ring, the shape of the air outlet surface of the main nozzle 30 can be circular, elliptical or polygonal, and the shape of the air outlet surface of the secondary nozzle 40 is annular. The annular secondary nozzle 40 can spray gas in all directions around the main nozzle 30, so as to replenish the edge area inside the cavity 10 from all directions. Figure 2 The illustrated structure exemplifies a main nozzle 30 surrounded by a ring of secondary nozzles 40, with the main nozzle 30 having a circular outlet surface. In other embodiments, the main nozzle 30 may be surrounded by two or more annular secondary nozzles 40.

[0065] refer to Figure 3 and Figure 4The number of secondary nozzles 40 in each ring is multiple, and the number of secondary nozzles 40 in each ring is even, symmetrically arranged around the main nozzle 30. The shape of the air outlet surface of the main nozzle 30 includes a circle, an ellipse, or a polygon, and the shape of the air outlet surface of the secondary nozzles 40 includes a circle, an ellipse, or a polygon. Figure 3 The illustrated structure exemplarily shows a secondary nozzle 40 surrounding a main nozzle 30. Figure 4 The illustrated structure exemplarily shows two concentric rings of secondary nozzles 40 surrounding the main nozzle 30, and Figure 3 and Figure 4 The exhaust surfaces of both the secondary nozzle 40 and the main nozzle 30 are circular. Multiple secondary nozzles 40 are provided in each ring, allowing for individual control of the gas flow rate of each secondary nozzle 40 to adjust the ventilation volume in different edge regions within the cavity 10 according to actual conditions. Furthermore, ensuring that the distances from the secondary nozzles 40 to the main nozzle 30 within the same ring are equal, and that the distances between adjacent secondary nozzles 40 within the same ring are also equal, further improves the uniformity of gas distribution within the cavity 10, enhancing the etching uniformity of the central and edge regions of the structure 1 to be etched.

[0066] Furthermore, the secondary nozzles 40 located in the same circle are distributed in a circular, elliptical, or polygonal shape around the main nozzle 30; wherein, in two adjacent circles of secondary nozzles 40, the number of secondary nozzles in the circle of secondary nozzles 40 that is closer to the main nozzle 30 is less than or equal to the number of secondary nozzles in the circle of secondary nozzles 40 that is farther from the main nozzle 30.

[0067] Specifically, multiple secondary nozzles 40 located in the same circle form a secondary nozzle group. Since the circumference of the circle containing the secondary nozzle group closer to the main nozzle 30 in two adjacent secondary nozzle groups is smaller than the circumference of the circle containing the secondary nozzle group farther from the main nozzle 30, the number of secondary nozzles 40 in the secondary nozzle group closer to the main nozzle 30 in two adjacent secondary nozzle groups can be set to be less than the number of secondary nozzles 40 in the secondary nozzle group farther from the main nozzle 30. This can improve the uniformity of the arrangement of all secondary nozzles 40, further improve the uniformity of gas distribution in the cavity 10, and improve the etching uniformity of the central and edge regions of the structure to be etched 1. Figure 2 and Figure 3 An example is shown where the secondary nozzles 40, located in the same circle, are distributed in a circular arrangement around the main nozzle 30; Figure 4 An exemplary illustration shows that the secondary nozzles 40 located in the same circle are distributed in a polygon around the main nozzle 30, and the sides of the polygons located in the inner circle are parallel to the sides of the polygons located in the outer circle.

[0068] It should be noted that having too many auxiliary nozzles 40 would increase the number of ventilation pipes connected to them, which is detrimental to the low cost of the dry etching device. Therefore, the number of auxiliary nozzles 40 surrounding the main nozzle 30 should not be too many. For example, the number of auxiliary nozzles 40 surrounding the main nozzle 30 can be set to 1, 2, or 3 circles.

[0069] Based on the above embodiments, Figure 5 This is a schematic diagram showing another arrangement of the main nozzle 30 and the auxiliary nozzle 40 provided in this embodiment of the present invention. (Refer to...) Figure 5 Optionally, two concentric rings of secondary nozzles 40 surround the main nozzle 30, with each ring of secondary nozzles 40 forming a square around the trajectory of the main nozzle 30. A secondary nozzle 40 is positioned at the apex of each square trajectory, and the four secondary nozzles 40 located at the apex of the inner ring of the square trajectory are respectively positioned at the midpoint of each side of the outer ring of the square trajectory. (Comparison) Figure 4 and Figure 5 The technical solution provided by this utility model embodiment reuses a portion of the number of secondary nozzles 40 located in the inner ring as secondary nozzles 40 in the outer ring. This can reduce the total number of secondary nozzles 40, reduce the cost of the dry etching apparatus, and at the same time ensure the uniformity of etching in the central and edge regions of the structure to be etched 1.

[0070] Based on the above embodiments, refer to Figures 1-5 Optionally, the area of ​​the air outlet surface of the main nozzle 30 is greater than or equal to the area of ​​the air outlet surface of the auxiliary nozzle 40. Since the number of auxiliary nozzles 40 is greater than or equal to the number of main nozzles 30, setting the area of ​​the air outlet surface of the main nozzle 30 to be greater than or equal to the area of ​​the air outlet surface of the auxiliary nozzles 40 can ensure the airflow of the main nozzle 30 to the central region Q1 of the cavity 10, while also preventing excessive airflow from all the auxiliary nozzles 40 to the edge region of the cavity 10, which would result in a higher gas concentration in the edge region of the cavity 10 than in the central region, thus affecting the etching uniformity of the structure 1 to be etched. Optionally, the diameter of the main nozzle 30 can range from 1mm to 50mm; for example, the diameter can be 3mm, 5mm, 10mm, 15mm, 20mm, 25mm, 30mm, 35mm, 40mm, or 45mm.

[0071] Based on the above embodiments, please continue to refer to Figure 1 Optionally, the dry etching apparatus also includes:

[0072] The flow divider 50 is located between the gas nozzle assembly and the bottom of the cavity 10;

[0073] The gas collecting chamber 01 is located between the top of the flow divider 50 and the cavity 10;

[0074] The reaction chamber 02 is located between the flow divider 50 and the bottom of the chamber 10;

[0075] The flow divider plate 50 has multiple flow divider holes 51 that connect the gas collection chamber 01 and the reaction chamber 02.

[0076] Specifically, the flow divider 50 is used to divide the cavity in the chamber 10 into two upper and lower chambers: a gas collecting chamber 01 and a reaction chamber 02. The flow divider 50 has several flow divider holes 51, through which the gas collecting chamber 01 and the reaction chamber 02 are connected. In this embodiment, the gas collecting chamber 01 is the chamber near the top of the chamber 10, and the reaction chamber 02 is the chamber away from the top of the chamber 10. The structure to be etched 1 is placed inside the reaction chamber 02, therefore the supporting substrate is disposed in the reaction chamber 02. After the gas ejected from the main nozzle 30 and the auxiliary nozzle 40 enters the gas collecting chamber 01, the flow divider 50 blocks the gas, allowing it to diffuse sufficiently within the gas collecting chamber 01 and completely fill it, thus improving the uniformity of gas distribution within the gas collecting chamber 01. The gas in the gas collecting chamber 01 is introduced into the reaction chamber 02 through the flow divider 51 in the flow guide plate. This allows the gas to be more evenly distributed above the object to be etched, helping to ensure more uniform contact between the ionized gas and the material to be etched throughout the etching process, thereby improving the uniformity and consistency of the etching. Therefore, the flow divider 50 can effectively change the direction and speed of gas flow, thereby optimizing the airflow distribution during the etching process and ensuring etching uniformity and efficiency.

[0077] Based on the above embodiments, optionally, the shape of the flow divider 51 includes a circle, an ellipse, or a polygon. Multiple flow dividers 51 are uniformly formed on the flow divider plate 50, thereby further improving the uniformity of contact between the ionized gas and the material to be etched, and enhancing the uniformity and consistency of the etching process.

[0078] Figure 6 This is a schematic diagram of the structure of a flow divider 50 provided in an embodiment of the present invention, for reference. Figure 6 The shunt hole 51 is shown to be circular in shape. The diameter of the shunt hole 51 ranges from 0.1 mm to 2 mm. For example, the diameter range can be 0.3 mm, 0.5 mm, 0.6 mm, 0.8 mm, 1 mm, 1.5 mm, or 1.8 mm. This prevents the accumulation of waste gas particles generated during the etching process in the shunt hole 51 due to its small diameter, which could eventually cause blockage. It also prevents the shunt hole 51 from being too large, which could affect the etching uniformity of the central and edge regions of the structure 1 to be etched.

[0079] Based on the above embodiments, refer to Figure 1Optionally, the cavity 10 includes a U-shaped base 11 and an upper cover 12 covering the top of the U-shaped base 11; wherein the main nozzle 30 and the secondary nozzle 40 are formed on the upper cover 12; the inner wall of the U-shaped base 11 may include a support member (not shown) for supporting the flow divider 50. By adjusting the position of the support member, the position of the flow divider 50 within the cavity 10 can be adjusted, thereby achieving adjustment of the volume of the gas collecting chamber 01 and the volume of the reaction chamber 02.

[0080] Based on the above embodiments, continue to refer to Figure 1 Optionally, both the first electrode 21 and the second electrode 22 are metal layers. The first electrode 21 is located on the side of the upper cover 12 away from the U-shaped base 11, and the second electrode 22 is located inside the carrier substrate and is wrapped by the carrier substrate. Alternatively, the second electrode 22 is located on the side of the carrier substrate closer to the bottom surface of the cavity 10. In one configuration, the first electrode 21 is grounded, the second electrode 22 is connected to an RF power supply, and the dry etching apparatus is a PE etching apparatus. Alternatively, the second electrode 22 is grounded, the first electrode 21 is connected to an RF power supply, and the dry etching apparatus is a RIE etching apparatus.

[0081] Based on the above embodiments, Figure 7 This is a schematic diagram of another dry etching apparatus provided in an embodiment of the present invention. Figure 8 This is a schematic diagram of another dry etching apparatus provided in an embodiment of the present invention, for reference. Figure 7 and Figure 8 Optionally, the first electrode 21 is a metal coil 211, and the second electrode 22 is a metal layer. The first electrode 21 is located on the side of the upper cover 12 away from the U-shaped base 11 (e.g., Figure 7 ), in a spiral shape; or, the first electrode 21 is wound around the side wall of the upper part of the U-shaped base 11 (such as Figure 8 The second electrode 22 is located within the carrier substrate and is enclosed by the carrier substrate, or the second electrode 22 is located on the side of the carrier substrate near the bottom surface of the cavity 10. The dry etching apparatus is an ICP etching apparatus. The first electrode 21 is connected to a first radio frequency (RF) power supply, and the second electrode 22 is connected to a second RF power supply. The frequency of the second RF power supply is lower than the frequency of the first RF power supply, so that the second RF power supply inputs a bias voltage to the second electrode 22.

[0082] Note that the above description is merely a preferred embodiment of the present invention and the technical principles employed. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments, and substitutions can be made without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and may include many other equivalent embodiments without departing from the concept of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. A dry etching apparatus, characterized in that, include: cavity; A gas nozzle assembly, located on the inner top surface of the cavity, is used to introduce gas into the cavity; The first electrode and the second electrode are located at the top and bottom of the cavity, respectively; the first electrode and the second electrode are used to ionize the introduced gas and generate plasma; The gas nozzle assembly includes a main nozzle and at least one ring of auxiliary nozzles arranged around the main nozzle; the main nozzle is located in the central region of the inner top surface of the cavity, and the auxiliary nozzles are located in the edge region of the inner top surface of the cavity; the jet direction of the main nozzle is from the inner top surface of the cavity to the inner bottom surface of the cavity, and the angle between the jet direction of the auxiliary nozzles and the jet direction of the main nozzles is greater than 0° and less than or equal to 90°.

2. The dry etching apparatus according to claim 1, characterized in that, In the direction from the top surface of the cavity to the bottom surface of the cavity, the distance from each of the secondary nozzles to the main nozzle gradually increases; And / or, the number of secondary nozzles in each ring is one or more; when the number of secondary nozzles in each ring is more than one, the number of secondary nozzles in each ring is an even number, and they are symmetrically arranged around the main nozzle; the distance from the secondary nozzles in the same ring to the main nozzle is the same, and / or the distance between any two adjacent secondary nozzles in the same ring is the same.

3. The dry etching apparatus according to claim 1, characterized in that, Also includes: A flow divider is located between the gas nozzle assembly and the bottom of the cavity; The gas collection chamber is located between the flow divider plate and the top of the chamber. The reaction chamber is located between the flow divider plate and the bottom of the chamber body; The flow divider plate has multiple flow divider holes that connect the gas collection chamber and the reaction chamber.

4. The dry etching apparatus according to claim 3, characterized in that, Multiple flow divider holes are evenly formed on the flow divider plate; And / or, the shape of the diversion orifice includes circular, elliptical, or polygonal; And / or, the diameter of the diversion orifice is in the range of 0.1 to 2 mm.

5. The dry etching apparatus according to claim 2, characterized in that, The secondary nozzles located in the same circle are distributed in a circular, elliptical, or polygonal pattern around the main nozzle; Among adjacent rings of auxiliary nozzles, the number of auxiliary nozzles in the ring closer to the main nozzle is less than or equal to the number of auxiliary nozzles in the ring farther from the main nozzle.

6. The dry etching apparatus according to claim 5, characterized in that, The main nozzle is surrounded by two rings of secondary nozzles, and the trajectory of each ring of secondary nozzles around the main nozzle is square; wherein, a secondary nozzle is respectively set at the apex corner of each square trajectory, and the secondary nozzles located at the four apex corners of the inner ring square trajectory are respectively set at the midpoint of each side of the outer ring square trajectory. And / or, the shape of the air outlet surface of the main nozzle includes a circle, an ellipse, or a polygon; the shape of the air outlet surface of the secondary nozzle includes an annular, a circle, an ellipse, or a polygon. And / or, the area of ​​the air outlet surface of the main nozzle is greater than or equal to the area of ​​the air outlet surface of the secondary nozzle; And / or, the diameter of the main nozzle is in the range of 1mm to 50mm.

7. The dry etching apparatus according to claim 1, characterized in that, Also includes: A support substrate is located at the bottom of the cavity and is used to support the structure to be etched. The second electrode is located within the carrier substrate and is enclosed by the carrier substrate; or the second electrode is located on the side of the carrier substrate near the bottom surface of the cavity.

8. The dry etching apparatus according to claim 3, characterized in that, The cavity includes: U-shaped base and top cover on top of the U-shaped base; The main nozzle and the auxiliary nozzle are located in the upper cover; The inner wall of the U-shaped base includes a support member for supporting the diverter plate.

9. The dry etching apparatus according to claim 8, characterized in that, The first electrode is located on the side of the upper cover away from the U-shaped base. Both the first electrode and the second electrode are metal layers; The first electrode is grounded, and the second electrode is connected to an RF power supply; or, the second electrode is grounded, and the first electrode is connected to an RF power supply.

10. The dry etching apparatus according to claim 8, characterized in that, The first electrode is located on the side of the upper cover away from the U-shaped base, or the first electrode is wrapped around the side wall of the U-shaped base; The first electrode is a metal coil, and the second electrode is a metal layer; The first electrode is connected to a first radio frequency power supply, the second electrode is connected to a second radio frequency power supply, and the frequency of the second radio frequency power supply is less than the frequency of the first radio frequency power supply.

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